EDC Question Bank (2022-23) Page |1

III Semester
Electronic Devices and Circuits
Question Bank

UNIT - 1

1. Explain the classification of material based on conductivity and energy band

diagram.
2. Define forward static and dynamic resistances of diode.
3. Draw the V-I characteristics of PN junction Diode and explain the diode parameters.
4. Outline the charge carrier diffusion phenomenon across a PN junction. Explain the
effect of forward and reverse biasing on the depletion region.
5. Discuss the effect of temperature on diode characteristics.
6. Define diffusion capacitance and transition capacitance.
7. Distinguish the Zener breakdown and Avalanche breakdown.
8. What is Zener diode? Draw the V-I characteristics of Zener diode.
9. What is clipper circuit? Draw the circuit diagram of a positive clipper circuit and
explain its working with necessary input and output waveform.
10. Write any two differences between Zener breakdown and Avalanche
breakdown.
11. List the applications of Zener Diode.
12. Write the temperature dependence of reverse saturation current of PN junction
diode.
13. Draw the energy band diagram of a semiconductor.
14. Why a semiconductor acts as an insulator at ordinary temperature?
15. Define valence band and conductance band.
16. Name some donor and acceptor which can be added as impurities in Silicon and
Germanium.
17. Differentiate drift current and diffusion current.
18. Why Silicon is preferred over Germanium in the manufacture of semiconductor
devices?
19. Define forbidden energy gap.
20. Define forward and reverse recovery time of a diode.
21. Define knee voltage and breakdown voltage with respect to
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diode.
22. What are the limitations of using zener diode regulator?
23. Explain zener breakdown.
24. Explain donor and acceptor impurities.
25. Draw a simple clamping circuit and explain its working.
26. Explain the operation of a p-n junction diode in forward biased and reverse biased
condition. Draw its V-I characteristics
27. Explain the different diode equivalent circuits with necessary approximation if any.
28. Compare a shunt and series positive clipper circuit.
29. Draw a Zener diode-based voltage regulator circuit hence give its working.
30. Construct a full wave rectifier using PN diodes in bridge configuration. Describe the
working with neat waveforms.

UNIT - 2

1. Sketch the circuit of a half-wave rectifier and explain its operation. Derive Vdc, Vrms
& PIV for it.
2. For the full wave circuit derive the expressions for dc current, dc output voltage, rms
current, rectifier efficiency and ripple factor.
3. Write short note on RC, LC and π Filter.
4. Compare the performance of half-wave rectifier and full-wave
rectifier.
5. Define Transformer utilization factor.
6. What are the advantages of Bridge rectifier?
7. Define filter and what are the types of filters?
8. Explain the operation of π section filter with bridge rectifier
9. Explain the working of Bridge rectifier. Give the expressions for RMS current, PIV,
ripple factor and efficiency.
10. Write down the advantages of C filter.
11. What is the need of rectifier? List different types of rectifiers.
12. Draw the circuits of a RC and LC power Supply Filters. Show their output waveforms.
13. A street Vegetable Vendor was using an oil lamp in her shop, one day she gets an
LED lamp which works with 12 V DC supply. The nearest shop owner permits her to
use the 230 V ac supply from his shop.
a. As an Electrical Engineering Student construct a circuit to supply DC to make
the LED lamp to glow from the given ac supply.
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b. Explain the working of the circuit you propose

c. Draw the necessary diagrams

UNIT - 3

1. Explain the following diagrams for npn transistor.

a. Block Diagram
b. Symbols
c. Depletion Regions
2. Explain the following diagrams for pnp transistor.
a. Block Diagram
b. Symbols
c. Depletion Regions
3. Explore the operation of npn transistor.
4. Explore the operation of pnp transistor with proper diagrams.
5. Derive various currents and terminal voltages of an npn transistor.
6. Derive various currents and terminal voltages of a pnp transistor.
7. Derive base to collector current gain in terms of common base dc current gain.
8. Explain the following terms with the equations and significance in the operation of a
transistor.
a. Common base dc current gain
b. Base to collector current gain
c. Collector to base leakage current
9. Calculate Ic and IE for a transistor that has αdc =0.98 and IB = 100μA. Determine the
value of βdc for transistor.
10. Explain the common base characteristics of a transistor.
11. Plot the various characteristics of common base configuration of a transistor.
12. Explain the common emitter characteristics of a transistor.
13. Plot the various characteristics of common emitter configuration of a transistor.
14. Illustrate and explain the complete characteristics of a BJT in common collector
configuration.
15. Plot the various characteristics of common collector configuration of a transistor.
16. Explain the following terms and their significance.
a. DC load line
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b. Bias Pint
17. Analyse the circuit of a base bias of a transistor for getting base current, collector
current and collector to emitter voltage.
18. The base bias circuit as shown in figure with hFE = 100. Determine IB, IC and VCE.

19. Analyse the circuit of a collector to base bias of a transistor for getting base current,
collector current and collector to emitter voltage.
20. The collector to base bias circuit as shown in figure with h FE = 100. Determine IB, IC
and VCE.

21. Analyse the circuit of a voltage divider bias of a transistor for getting emitter current,
collector voltage and collector to emitter voltage.
22. The voltage divider bias circuit as shown in figure with h FE = 100. Determine IE, VC
and VCE.

23. Compare the basic BJT bias circuits for various parameters.
24. A common emitter configuration has following parameters R L =2000 Ohms, hie=900
Ohms, hfe=24, hre=2.1x10-4, hoe=16x106 Mho, determine the transconductance gain,
Voltage gain and current gain.
25. A 5 V stabilized power supply is required to be produced from a 12 V DC power
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supply as input source. The maximum power rating of the diode is 2 Watts. Applying
to a basic regulator circuit determine the maximum current permissible through the
diode and minimum value of the series resistor to be used.

UNIT - 4

1. Explain the principle of operation of JFET with clearly mentioning the diagram and
symbol.
2. Define the following parameters in JFET.
a. Pinch off voltage
b. Breakdown voltage
c. Drain source saturation current
3. Define the following regions in JFET.
a. Channel Ohmic Region
b. Pinch off Region
c. Breakdown Region
4. Explain the drain characteristics of JFET for different VGS.
5. Write a short note on transfer characteristics and its obtaining principle from drain
characteristics.
6. Write a short note on the following topics.
a. DC Load line
b. Bias Point (Q point)
7. Analyse the gate bias circuit for the JFET.
8. Analyse the self-bias circuit for the JFET.
9. Analyse the voltage divider bias circuit for the JFET.
10. Compare the basic JFET bias circuit by considering to the minimum and maximum
values current gain hfe.
11. Explain the enhancement type MoSFET with necessary construction, symbol and the
waveform.
12. Explain the depletion enhancement type MoSFET with necessary construction,
symbol and the waveform.
13. Explain the different DMOS bias circuits with necessary graph.
14. Explain the different EMOS bias circuits with necessary graph.
15. Draw the Fixed bias circuit of a FET and compare it with Self bias circuit.
16. Justify the need of JFET when compared with BJT, discuss its construction, and draw
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its typical operating characteristics mentioning its regions of operation.

17. Expand MOSFET, give its typical structure and types, explain its working principle
with the illustration of its operating regions.
18. The MOSFET connected in the circuit shown is used to turn on and turn off the lamp.
What are the gate signals that are required to turn-ON and OFF as well to control the
lamp if the MOSFET is a N-Channel and P-Channel Enhancement Type. Repeat for
Depletion type.

UNIT - 5

1. Explain the feedback concept in the amplifiers.

2. Compare different topologies of feedback amplifiers.
3. Analyse the principle of oscillators.
4. Illustrate the circuit of a RC Phase shift oscillator and discuss its working. Give its
merits and drawbacks.
5. Mention the advantages and disadvantages of RC phase shift oscillator.
6. In an RC phase shift oscillator R=1Ω, RC=1Ω and C=0.1μF. Calculate the frequency
of oscillations.
7. Derive the frequency of oscillations in Wein bridge oscillator by clearly explaining
the operation of the same.
8. The component values are given for the wein bridge oscillator of the circuit of the
figure shown R1=R2=33kΩ, C1=C2=0.001μF, R3=47kΩ and R4=15kΩ.
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9. What is meant by crystal oscillator and explain the same with proper diagrams.
10. Discuss the class A power amplifiers with necessary diagrams.
11. Discuss the class B power amplifiers with necessary diagrams.
12. Discuss the class C power amplifiers with necessary diagrams.
13. Discuss the class AB power amplifiers with necessary diagrams.
14. In a phase shift oscillator circuit, the values of R1=R2=R3=1MW and C1=C2=C3=68
PF. At What frequency does the circuit oscillate?
15. Write down the transfer function of a feedback amplifier. Give any 3 points of
comparison between positive and negative feedback.