Viva Questions .. (12th) Term 2
Viva Questions .. (12th) Term 2
Viva Questions .. (12th) Term 2
10 •~•w
VIVA VOCE
142
PRACTICAL SKILLS IN p
eO REDMI NOTE 8
00 Al QUAD CAMERA
·ch factors affect the conctuctivit" f
W)l1 rs affecting
· t h c conducttvity
.
fJ
O a 1na1 , · ,
Qq. enn\?
facto . o n material·
_.\oS•, [)lttice structmc and . .
ic strncture of constttucnt cle
Ato 111 1ncnts
' l is the difference between resist· . ' ·
\\fll!l , . ' lV1ty of CO
otll• conductors have very low resistivity, WhHe se ~ductors and semiconductors'?
\oS• ,,11at do you understand by intrinsic se . 1n1conductors have medium resistivity.
,1tl•
\iv
,.emiconductors are called , 1-11tr. .m1co11du ctors?
" 011fC " 1ns1c s •
s r' , · tr·111sic' prope1fo of tl . em,conduct , l )
\O·' -~ an in 'J le material and tl ors · The presence of charge carriers (electrons and ho es
th
~tectrons (ne) ~s equal_t? e number of holes (,:es~ a:e 0 ?tained as a result of thermal excitation. The number _of
,dth an effective positive charge. Ii) tn tntnnsic conductors. Holes are essentially electron vacancies
,,That do you understand by extrinsic 8 . .
, vv •· emiconduct . ?
01~• fbe number of charge caniers can be chan ed ~rs .
5
~0 • iconductors are known as extrinsic s g_ by doping' of a suitable impurity in pure semiconductors. Such
seOl . · ein1conductors.
W}lat is the difference between n-type and -t .
Q13• ._x. nee between n-type and p-ty _P :Ype semiconductors?
111S,
p1uere • duct ors, ne > > pe sein1conducto rs..
type sermcon n
/V"
w~ "
Wp-type semiconductors n1, > > ne
What do you understand by p-n junction?
4
Ql · ·unction is the 'key' to all semiconductor d · ·
;.ns,p-nJ_ • Of~TY\""'obile ion-cores d .d evices. When such a junction is made, a ' depletion layer' 1s formed
0ns1stmg ll.ll.U-1. evo1 of their el tr • • . • · · b ·
c . . ec ons or holes. This 1s responsible for a Junction potential amer.
at happens to Junction potential barriers in ..-1 0 d b. d. .
Q15, Wh . . ' rwar ias an m reverse bias?
~orward bias, the barner 1s decreased wh·1 1 e the b arner
• . . ·
;.ns, In '
1
. . . mcreases m reverse bias. Hence, in forward bias current
. ore (mA) while 1t 1s very small (µA) · b' . . . .
1s rn m reverse 1as m a p-n Junction diode.
Ql 6, What do you understand by _forwa~d bias?
AJIS. When an external voltage V is ~pphed across a semiconductor diode such that p-side is connected to the positive
terminal of the battery and n-side to the negative terminal, it is said to be forward biased. In case of forward
bias the current will not be large for small voltage up to 0.4 V. Once voltage is raised beyond this, the current
rises in p-n junction in forward bias.
Ql7. What do you understand by reverse bias?
Ans. When an external voltage V is applied across a semiconductor diode such that p-side is connected to the negative
terminal of the battery and n-side to the positive terminal, it is said to be reverse biased. Reverse biasing increases
barrier potential and as a result there is hardly any flow of current. When voltage becomes too high then there
is sudden flow of high reverse of current.
{vtVAvOCE)
QI. Wba1 1s Z mer rliode . .
A · . · ~ 1·t8 10· ventor C. Zener. It 1s des1gned t0
n~~ 1t a special purpose semiconductor diode, named a er
15 0 Perate
re,erse bias in the breakdown region and used as a voltage regulator. ~n,
Q 2 What 1s LED or light emitting diode? ·
A ns., L h E • • . . h' h l tron excitation by a bias voltage results
ig t nutting Diode is special type of diode m w ic e ec .
1
generation of light. n¾
Q3. Zener diode is used for which purpose?
Ans. Zener diode is used as voltage regulator.
Q4. What is reverse current? What constitutes it?
Ans. The current due to reverse bias voltage is known as reverse current. It is due to minority carriers.
QS. What are minority carriers?
Ans. Free electrons in p-type semiconductor a:nd holes in n-type semiconductor, are known as minority earners.'th
are generated due to breaking of covalent bonds. ~
Q6. Is Zener effect common in all diodes are only in Zener diode?
Ans. Zener effect is common in all semiconducting diodes but breakdown voltage is very sharp in case of
diode. 2en~
• j
.. sndl"s luw?
at ii-. h
, \ 11"11 I \:\. stntc:s I Ill
•1f":,. II • •
,,.,. :,:11l . ·nw incident
•
n.t), th1.• rdnactcd rnu II Ile in the
i;,."
ar
c1l I1nt· ·
:,; 11111.• P 1
.., unct the no rnl.l I to the tnfcrt11c c at the pt'll nt 0
1 ,n~1dcnc.•c. n
1
r1t1.· r.1 tio of' th..- sint.• of tht.• nnglc O f,
(;O mc,dc,•
sin , ,cc to the ~,nc of nnglc of refr u.:t11nn ,s con stu11I .
r !-.I 11
•. ,.. is an!! It' o, inc.·idt.•ncc and •,.· i. · n,. mcl.11um
,,·:;;·::_~._p1;d to thl.' first mcdiun1. s angle of refraction and n is the refractive index of the second
,, 1 i, , l,u unfkrstand o, optica J d .
.11 .11 l t • • cns1t:y'>
'' • .. 11 ti1.•nsi~ is a relat" c ten11. ln ca · h
l
1
~•' l1,11<• ~ct·
fi t se of t,v d' is more l o.n
\at•· t -it l,f tht' rs _nu:: tun1 t_1en 1 .,_,. ..._ _; and in t 0 tnect1a, if refractive index or the second me ium • in arcd
th• • first med1un1. In this case the 1· I hat case second d' . ·ct t be optically denser co _P
11
'tht. tg 1t bean1 b d me mm is sa, o d medium.
•lf't.· diamonds brilliant? en s towards the normal when it enters the secon
\\ h) • .
11 ;. fh•• ..-rincal angle of drn:mond-air intern
. d'amond So d'1
.
ace ts very
an1onds are vei:y b . . small (about 24.4°). Because of this there i·s total reflection
I. . 1
,,,,.. ,-Jieht IO · •
l,11.
,, -
!ic>" do optica
· I fib nlhant
res transn1it signals to lar e .
tical fibres are niade in such a way ti
.
g distances?
\ti~ C!tfie absorption of light inside them Tll~t total reflection of light takes place inside them Further there is very
\
• II • 1Is enable · · ·
,bat do you understand by dispersi f s opttcal fibres to transmit signals over large distances.
J \\ on o light?
l>1 · fbe phenomenon of splitting of lio-Iit • .
os- . "' into Its con . .
\ ~ Refraction of light happens through Which lponent colm.u-s IS known as dispersion.
QI='· Whenever the ray of light travels fro th
of e fo llowing?
01
\Os. one medium t 0 .
· pispersion of light takes place throu h . another; obliquely; refraction of light takes place.
Q16- . g Whtch of th :6 ll -
ecause of umque shape of prism li h e o owing?
.\JJS· 13 • . f . . , g t rays of d:i.ffc
· TlllS IS the cause O dispersion of light thr . erent wavelengths emerge from the prism at different angles.
oughpnsm.
r or formula is:
.
~ere,fis the focal length, u is the distance
f
of
v u
object and vis the
1
or/= - -
vu
v+u
distance
1
- +-
1
of image.