Experiment 1

Aim: Study V-I characteristics of P-N junction diode.

Objective:

i. Study of p-n junction diode.

ii. Understanding the working of p-n junction diode in forward and reverse bias.
iii. Draw the characteristics of p-n junction diode in forward and reverse bias mode.

Apparatus Required: p-n junction diode IN4007, regulated power supply, resistor 1kΩ,
ammeter (0-20mA), voltmeter (0-20V), Breadboard, connecting wires.

Theory: A diode is a nonlinear circuit element. donor impurities (pentavalent) are introduced
into one-side and acceptor impurities into the other side of a single crystal of an intrinsic
semiconductor to form a p-n junction diode with a junction called depletion region (this region
is depleted off the charge carriers) as shown in Fig. 4.1. this region gives rise to a potential
barrier called cut-in voltage. this is the voltage across the diode at which it starts conducting.
the P-N junction can conduct beyond this potential.

Figure 4.1: Symbol for PN Diode

a. Forward Biasing:
The P-N junction supports unidirectional current flow. If +ve terminal of the input
supply is connected to anode (P-side) and –ve terminal of the input supply is connected
the cathode. then diode is said to be forward biased as shown in Fig. 4.2.
 Depletion Layer

P-Region - + N-Region
- +
- +
- +

+ -
V
Figure 4.2: PN Diode in Forward Bias

In this condition the height of the potential barrier at the junction is lowered by an
amount equal to given forward biasing voltage. Both the holes from p-side and electrons
from n-side cross the junction simultaneously and constitute a forward current from n-
side (injected minority current – due to holes crossing the junction and entering P- side
of the diode). assuming current flowing through the diode to be very large, the diode
can be approximated as short- circuited switch.

b. Reverse Biasing:

If –ve terminal of the input supply is connected to anode (p-side) and +ve terminal of
the input supply is connected to cathode (n-side) then the diode is said to be reverse
biased as shown in Fig. 4.3.
 Depletion
Layer

- - + +
P-Region - - + + N-Region
- - + +
- - + +

- +
V
Figure 4.3: PN Diode in Reverse Bias
In this condition an amount equal to reverse biasing voltage increases the height of the
potential barrier at the junction. both the holes on P-side and electrons on N-side tend
to move away from the junction there by increasing the depleted region. however the
process cannot continue indefinitely, thus a small current called reverse saturation
current (in μA) continues to flow in the diode. this current is negligible hence the diode
can be approximated as an open circuited switch.

One final point, if the reverse bias voltage Vr applied to the diode is increased to a
sufficiently high enough value, it will cause the diode’s PN junction to overheat and
fail due to the avalanche effect around the junction. this may cause the diode to become
shorted and will result in the flow of maximum circuit current and this is shown as a
step downward slope in the reverse static characteristics curve as shown in Fig. 4.4.
 Figure 4.4: V-I Characteristics of PN Junction Diode
The volt-ampere characteristics of a diode explained by the following equations
I=IO (e VD/ η VT– 1)
Where I = current flowing in the diode, I0= reverse saturation current VD = Voltage
applied to the diode
VT= volt- equivalent of temperature = k T/q = T/ 11,600 = 26mV (@ room temp) and
η= 1(for Ge) and 2 (for Si)
It is observed that Ge diodes has smaller cut-in-voltage (0.3 V) when compared to Si
diode (0.7 V). The reverse saturation current in Ge diode is larger in magnitude when
compared to silicon diode.

Schematic Diagram:

Figure 4.5: Forward Biasing of PN Junction Diode

 Figure 4.6: Reverse Biasing of PN Junction Diode

Experimental Procedure:

A. Forward Bia:
1. Connections are made as per the circuit diagram.
2. For forward bias, the (+ve) supply is connected to the anode of the diode and (–ve)
supply is connected to the cathode of the diode.
3. Switch on the power supply and increase the input voltage (supply voltage) in steps.
4. Note down the corresponding current flowing through the diode and voltage across the
diode for each and every step of the input voltage.

5. The reading of voltage and current are tabulated.

6. Graph is plotted between voltage (VF) on X-axis and current (IF) on Y-axis.

B. Reverse Bias:
1. Connections are made as per the circuit diagram.
2. For reverse bias, the (+ve) supply is connected to the cathode of the diode and (–ve)
supply is connected to the anode of the diode.
3. Switch on the power supply and increase the input voltage (supply voltage) in steps.
4. Note down the corresponding current flowing through the diode voltage across the
diode for each and every step of the input voltage.
5. The readings of voltage and current are tabulated 6. Graph is plotted between voltage
(VR) on X-axis and current (IR) on Y-axis.

Observations:

Forward Bias:
 S.No. Applied Voltage Voltage Across Diode Forward current

(V) VF(Volt) IF(mA)

1.

2.

3.

4.

5.

6.

7.

8.

Reverse Bias:

S.No. Applied Voltage Voltage Across Diode Reverse current

(V) VR(Volt) IR (mA)

1.

2.

3.

4.

5.

6.

7.

8.

Graph:

V- I characteristics of diode: (to be plotted using readings)

Result: The graph has been plotted between voltage and current, and corresponding V-I
characteristic of p-n junction diode has been studied.
Result Analysis & Discussion: This section should be written individually by each student.

Inferences & Conclusion: This section should be written individually by each student.

Learning Outcomes:

1. Knowledge of proper connection of diode in forward and reverse bias in practical

applications.
2. Understanding the concept of potential barrier and correspondingly knee voltage.
3. Knowledge of order of magnitude of current in forward and reverse bias in p-n junction
diode.

Applications:

1. P-N junction diode is used in clipping circuits as wave shaping circuits in computers,
radio, radars etc.
2. It is used as switches in digital logic designs.
3. It is used in detector and demodulator circuits.
4. It is used in clamping circuits in TV receivers as well as voltage multipliers.
5. It is used as rectifiers in DC power supply manufacturing.

Precautions:

1. Select proper multi-meter range during forward bias and reverse bias.
2. Connect diode with correct polarity for forward and reverse bias operation.
3. Make all connections tight.
4. Get the connections checked according to the circuit diagram before switching on the
supply.