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    Isc 2SD1516: Silicon NPN Power Transistor

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    Ngoc An
    This document provides information on the isc Silicon NPN Power Transistor 2SD1516. It has a low collector saturation voltage, good hFE linearity, high switching speed, and high current capacity. It is designed for use in power amplifiers and switching applications. Key specifications include a maximum collector-emitter voltage of 80V, collector current of 2A continuous and 5A peak, and storage temperature range of -55°C to 150°C.

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    Isc 2SD1516: Silicon NPN Power Transistor

    Uploaded by

    Ngoc An
    21 views2 pages
    This document provides information on the isc Silicon NPN Power Transistor 2SD1516. It has a low collector saturation voltage, good hFE linearity, high switching speed, and high current capacity. It is designed for use in power amplifiers and switching applications. Key specifications include a maximum collector-emitter voltage of 80V, collector current of 2A continuous and 5A peak, and storage temperature range of -55°C to 150°C.

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    2sd1516

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    This document provides information on the isc Silicon NPN Power Transistor 2SD1516. It has a low collector saturation voltage, good hFE linearity, high switching speed, and high current capacity. It is designed for use in power amplifiers and switching applications. Key specifications include a maximum collector-emitter voltage of 80V, collector current of 2A continuous and 5A peak, and storage temperature range of -55°C to 150°C.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    21 views2 pages

    Isc 2SD1516: Silicon NPN Power Transistor

    Uploaded by

    Ngoc An
    This document provides information on the isc Silicon NPN Power Transistor 2SD1516. It has a low collector saturation voltage, good hFE linearity, high switching speed, and high current capacity. It is designed for use in power amplifiers and switching applications. Key specifications include a maximum collector-emitter voltage of 80V, collector current of 2A continuous and 5A peak, and storage temperature range of -55°C to 150°C.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 2

    isc Silicon NPN Power Transistor 2SD1516

    DESCRIPTION
    ·Low Collector Saturation Voltage
    ·Good Linearity of hFE
    ·High Switching Speed
    ·High IC
    ·Minimum Lot-to-Lot variations for robust device
    performance and reliable operation

    APPLICATIONS
    ·Designed for power amplifier ,power switching applications.

    ABSOLUTE MAXIMUM RATINGS (Ta=25℃)

    SYMBOL PARAMETER VALUE UNIT

    VCBO Collector-Base Voltage 130 V

    VCEO Collector-Emitter Voltage 80 V

    VEBO Emitter-Base Voltage 7 V

    IC Collector Current -Continuous 2 A

    ICM Collector Current-Peak 5 A

    Collector Power Dissipation


    1.4
    @Ta=25℃
    PC W
    Collector Power Dissipation
    25
    @TC=25℃

    Tj Junction Temperature 150 ℃

    Tstg Storage Temperature -55~150 ℃

    isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark


    isc Silicon NPN Power Transistor 2SD1516

    ELECTRICAL CHARACTERISTICS
    Tj=25℃ unless otherwise specified

    SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

    V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ;IB= 0 80 V

    VCE(sat) Collector-Emitter Saturation Voltage IC= 2A ;IB= 0.1A 0.5 V

    VBE(sat) Base-Emitter Saturation Voltage IC= 2A ;IB= 0.1A 1.5 V

    ICBO Collector Cutoff Current VCB= 100V; IE= 0 10 μA

    IEBO Emitter Cutoff Current VEB= 5V; IC= 0 50 μA

    hFE-1 DC Current Gain IC= 0.1A ; VCE= 2V 45

    hFE-2 DC Current Gain IC= 0.5A ; VCE= 2V 60 260

    fT Current Gain-Bandwidth Product IC= 0.5A; VCE= 10V 2.5 MHz

    Switching Times

    ton Turn-on Time 0.1 μs

    tstg Storage Time IC= 0.5A ,IB1= IB2= 50mA 2.5 μs

    tf Fall Time 0.3 μs

    NOTICE：
    ISC reserves the rights to make changes of the content herein the datasheet at any time without
    notification. The information contained herein is presented only as a guide for the applications of
    our products.
    ISC products are intended for usage in general electronic equipment. The products are not designed
    for use in equipment which require specialized quality and/or reliability, or in equipment which
    could have applications in hazardous environments, aerospace industry, or medical field. Please
    contact us if you intend our products to be used in these special applications.
    ISC makes no warranty or guarantee regarding the suitability of its products for any particular
    purpose, nor does ISC assume any liability arising from the application or use of any products, and
    specifically disclaims any and all liability, including without limitation special, consequential or
    incidental damages.

    isc website：www.iscsemi.com 2 isc & iscsemi is registered trademark

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