V Zener Voltage: Current Cage Code 67268

REVISIONS
LTR DESCRIPTION DATE (YR-MO-DA) APPROVED
Make changes to the minimum operating voltage test for device types 02 and
G 97-03-19 M. A. Frye
04 only as specified under table I in accordance with NOR 5962-R251-97.
Change vendor CAGE 48726 to 01295. Add class V for vendor CAGE 01295.
H 00-11-08 R. Monnin
Editorial changes throughout. Redrawn. – lgt
Correction to the VMIN limit in table I for device types 03 and 06.
J 01-10-10 R. Monnin
Editorial changes throughout. - rrp
K Add case outline D. - ro 02-05-30 R. Monnin
For CAGE 01295 only, delete case outline 2 and substitute case outline X for
L 03-12-19 R. Monnin
device class V devices. - ro
Add device type 09 and Table IIB. Make changes to 1.2.2, 1.4, and
M 09-01-07 R. Heber
Table I. - ro
Add device type 10. Add a microcircuit die appendix A. Add paragraph 3.1.1.
N Add footnote 7/ under Table I. Make changes to 1.2.2, Table I, figure 1, and 10-05-26 C. Saffle
Table IIB. - ro
P Add device type 11, case outline Y, and irradiation requirements. - ro 15-06-02 C. Saffle
R Add radiation requirements to device type 09. - ro 16-12-19 C. Saffle
T Add device type 12. - ro 19-04-24 C. Saffle
Table I, Reference section, Reference output voltage test, for device type 12
U 19-06-06 C. Saffle
only, pre and post limits will be changed to 4.85 V and 5.1 V. - ro
Make change to VCC zener voltage (VZ) and Total output variation test limits
V as specified in Table I. Add Temperature stability test to Table I for device 20-12-03 J. Eschmeyer
type 11. Add figure A-2 to Appendix A for device type 12. - ro
CURRENT CAGE CODE 67268

THE ORIGINAL FIRST PAGE OF THIS DRAWING HAS BEEN REPLACED.
REV
SHEET
REV V V V V V V V V V V V V
SHEET 15 16 17 18 19 20 21 22 23 24 25 26
REV STATUS REV V V V V V V V V V V V V V V
OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14
PMIC N/A PREPARED BY
DONALD R. OSBORNE
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
STANDARD CHECKED BY
https://www.dla.mil/LandandMaritime
MICROCIRCUIT D. A. DiCENZO
DRAWING
APPROVED BY
THIS DRAWING IS AVAILABLE N. A. HAUCK MICROCIRCUIT, LINEAR, PROGRAMMABLE
FOR USE BY ALL PRIMARY SIDE PULSE WIDTH MODULATOR,
DEPARTMENTS DRAWING APPROVAL DATE
AND AGENCIES OF THE MONOLITHIC SILICON
86-11-10
DEPARTMENT OF DEFENSE
REVISION LEVEL SIZE CAGE CODE
AMSC N/A
V A 14933 5962-86704
SHEET 1 OF 26
DSCC FORM 2233
APR 97 5962-E427-20
DISTRIBUTION STATEMENT A. Approved for public release. Distribution is unlimited.

1. SCOPE
1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device class Q and M)
and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or
Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN.
1.2 PIN. The PIN is as shown in the following examples.
For device class M and Q:
5962 - 86704 01 C A
Federal RHA Device Case Lead

stock class designator type outline finish
designator (see 1.2.1) (see 1.2.2) (see 1.2.4) (see 1.2.5)
\ /
\/
Drawing number
For device class V:
5962 - 86704 01 V C A
Federal RHA Device Device Case Lead

stock class designator type class outline finish
designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5)
\ / (see 1.2.3)
\/
Drawing number
1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are
marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A
specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.
1.2.2 Device type(s). The device type(s) identify the circuit function as follows:
Device type Generic number Circuit function
01 1842 Off-line current mode pulse width modulator controller

05 1842A Off-line current mode pulse width modulator controller
09 1843A-SP Off-line current mode pulse width modulator controller
10 1843-SP Off-line current mode pulse width modulator controller
11 1845A-SP Off-line current mode pulse width modulator controller
12 1843B-SP Off-line current mode pulse width modulator controller
STANDARD SIZE
MICROCIRCUIT DRAWING A 5962-86704
DLA LAND AND MARITIME REVISION LEVEL SHEET
COLUMBUS, OHIO 43218-3990 V 2
DSCC FORM 2234
APR 97

1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as listed
below. Since the device class designator has been added after the original issuance of this drawing, device classes M and Q
designators will not be included in the PIN and will not be marked on the device.
Device class Device requirements documentation
M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-

JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A
Q or V Certification and qualification to MIL-PRF-38535
1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows:
Outline letter Descriptive designator Terminals Package style
C GDIP1-T14 or CDIP2-T14 14 Dual-in-line

D GDFP1-F14 or CDFP2-F14 14 Flat pack
E GDIP1-T16 or CDIP2-T16 16 Dual-in-line
F GDFP2-F16 or CDFP3-F16 16 Flat pack
H GDFP1-F10 or CDFP2-F10 10 Flat pack
P GDIP1-T8 or CDIP2-T8 8 Dual-in-line
X CQCC1-N20 20 Square leadless chip carrier (see figure 2)
Y See figure 1 10 Flat pack
2 CQCC1-N20 20 Square leadless chip carrier (see figure 2)
1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535,
appendix A for device class M.
1.3 Absolute maximum ratings. 1/ 2/ 3/
Supply voltage (VCC) ................................................................................................ 30 V

Output current (IOUT) ................................................................................................ 1.0 A
Output energy (capacitance load) ............................................................................. 5.0  j
Analog input voltage ( VFB and ISENSE pins ) ........................................................... -0.3 V to +6.3 V
Error amplifier output sink current ............................................................................. 10 mA
Power dissipation (PD) (TA = +25C):
Cases C, E, F, H, P, X, Y, and 2 ............................................................................ 1.0 W 4/
Case D .................................................................................................................. 700 mW 4/
Storage temperature range ....................................................................................... -65C to +150C
Lead temperature (soldering, 10 seconds) ................................................................ +300C
Junction temperature (TJ) ......................................................................................... +150C
Thermal resistance, junction-to-case (JC) :
Cases C, D, E, F, H, P, X, and 2 .......................................................................... See MIL-STD-1835
Thermal resistance, junction-to-case (bottom)(JC bot) :
Case Y ................................................................................................................... 6.6C/W
______
1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the
maximum levels may degrade performance and affect reliability.
2/ All voltages are with respect to ground, and all currents are positive when flowing into the specified terminal.
3/ All references to pin numbers are for case outline P.
4/ Derate at 8.0 mW/C above TA = +25C for cases P and Y, 10 mW/C above TA = +50C for cases C and E,
5.5 mW/C above TA = +25C for case D, 8.7 mW/C above TA = +25C for case F,
9.0 mW/C above TA = +40C for cases 2 and X, and 6.9 mW/C above TA = +25C for case H.
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1.4 Recommended operating conditions.
Supply voltage (VCC):

Device types 01 – 08, 10 ....................................................................................... +15 V 5.0 percent
Device types 09, 11, 12 ......................................................................................... 12 V to 25 V
Sink/source output current (continuous or time average):
Device types 09, 11, 12 ......................................................................................... 0 mA to 200 mA
Reference load current:
Device types 09, 11, 12 ......................................................................................... 0 mA to 20 mA
Ambient operating temperature range (TA) ............................................................... -55C to +125C
1.5 Radiation features.
Maximum total dose available (dose rate = 10 mrads(Si)/s):

Device types 09 and 11 ......................................................................................... 30 krads(Si) 5/ 6/
Device type 12 ....................................................................................................... 100 krad(Si) 7/ 8/
2. APPLICABLE DOCUMENTS
2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part
of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the
solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATION
MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-883 - Test Method Standard Microcircuits.

MIL-STD-1835 - Interface Standard Electronic Component Case Outlines.
DEPARTMENT OF DEFENSE HANDBOOKS
MIL-HDBK-103 - List of Standard Microcircuit Drawings.

MIL-HDBK-780 - Standard Microcircuit Drawings.
(Copies of these documents are available online at https://quicksearch.dla.mil.)
2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text
of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a
specific exemption has been obtained.
_____
5/ The device types 09 and 11 may exhibit enhanced low dose rate sensitivity (ELDRS). However, post irradiation electrical
parametric limits remain within the pre-irradiation specifications limits at low dose rate condition D to TID level 30 krads (Si).
6/ The manufacturer supplying device types 09 and 11 has performed low dose rate irradiation test. The radiation end point
limits for the noted parameters are guaranteed only for the conditions as specified in MIL-STD-883, methods 1019,
condition D for total dose of 30 krads (Si).
7/ The device type 12 may exhibit enhanced low dose rate sensitivity (ELDRS). However, post irradiation electrical parametric
limits remain within the pre-irradiation specifications limits at low dose rate condition D to TID level 100 krad(Si).
8/ The manufacturer supplying device type 12 has performed low dose rate irradiation test. The radiation end point limits for
the noted parameters are guaranteed only for the conditions as specified in MIL-STD-883, method 1019, condition D for a
total dose of 100 krad(Si).
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3. REQUIREMENTS
3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with
MIL-PRF-38535 and as specified herein or as modified in the device manufacturer's Quality Management (QM) plan. The
modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for
device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified
herein.
3.1.1 Microcircuit die. For the requirements of microcircuit die, see appendix A to this document.
3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified
in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M.
3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein and figure 1.
3.2.2 Terminal connections. The terminal connections shall be as specified on figure 2.
3.2.3 Logic diagram. The logic diagram shall be as specified on figure 3.
3.2.4 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document
revision level control and shall be made available to the preparing and acquiring activity upon request.
3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the
electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full
ambient operating temperature range.
3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical
tests for each subgroup are defined in table I.
3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturer's PIN may also be
marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer
has the option of not marking the "5962-" on the device. For RHA product using this option, the RHA designator shall still be
marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be
in accordance with MIL-PRF-38535, appendix A.
3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a "QML" or "Q" as required in
MIL-PRF-38535. The compliance mark for device class M shall be a "C" as required in MIL-PRF-38535, appendix A.
3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535
listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of
compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see
6.6.2 herein). The certificate of compliance submitted to DLA Land and Maritime-VA prior to listing as an approved source of
supply for this drawing shall affirm that the manufacturer's product meets, for device classes Q and V, the requirements of
MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein.
3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for
device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing.
3.8 Notification of change for device class M. For device class M, notification to DLA Land and Maritime-VA of change of
product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing.
3.9 Verification and review for device class M. For device class M, DLA Land and Maritime, DLA Land and Maritime 's agent,
and the acquiring activity retain the option to review the manufacturer's facility and applicable required documentation. Offshore
documentation shall be made available onshore at the option of the reviewer.
3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in
microcircuit group number 110 (see MIL-PRF-38535, appendix A).
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TABLE I. Electrical performance characteristics.
Conditions 1/ 2/
Test Symbol -55C  TA +125C Group A Device Limits Unit
unless otherwise specified subgroups type
Min Max
REFERENCE section
Reference output voltage VREF IO = 1.0 mA, TJ = +25C 1 01 - 08 4.95 5.05 V
09,10,11 4.94 5.06
12 4.85 5.1
M, P, D 1 11 4.85 5.06
Line regulation VRLINE 12 V  VIN  25 V 1, 2, 3 All 20 mV
Load regulation VRLOAD 1.0 mA  IO  20 mA 1, 2, 3 All 25 mV
Over line, load, and 01-11 4.90 5.10

Total output variation 1, 2, 3 V
temperature 3/ 12 4.85 5.10
TA = +125C, 1000 hours,
Long term stability 3/ 2 01 - 08 25 mV
VREF
mV/
Temperature stability 3/ 4/ 5/ 1, 2, 3 11 0.4
C
Output short-circuit current IOS 1, 2, 3 All -30 -180 mA
OSCILLATOR section
Initial accuracy TJ = +25C 5/ 4 All 47 57 kHz
Voltage stability 12 V  VCC  25 V 4, 5, 6 All 1.0 %
Discharge current VRT/CT = 2 V 6/ 1 05 – 09, 7.8 8.8 mA

2, 3 11,12 7.5 8.8
ERROR AMP section
Input voltage VIN VCOMP = 2.5 V 1, 2, 3 All 2.45 2.55 V
Input bias current IIB 1, 2, 3 All -1.0 A
Open loop voltage gain AVOL 2.0 V  VO  4.0 V 4, 5, 6 All 65 dB
Unity gain bandwidth GBW 3/ 4, 5, 6 01 - 08, 10 0.55 MHz

4 09,11,12 0.7
Power supply rejection PSRR 4, 5, 6 All 60 dB
12 V  VCC  25 V
ratio
VVFB = 2.7 V,
Output sink current ISINK 1, 2, 3 All 2.0 mA
VCOMP = 1.1 V
VVFB = 2.3 V,
Output source current ISOURCE 1, 2, 3 All -0.5 mA
VCOMP = 5.0 V
See footnotes at end of table.
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TABLE I. Electrical performance characteristics – Continued.
Conditions 1/ 2/
Min Max
ERROR AMP section – continued.
VOUT high VOH VVFB = 2.3 V, RL = 15 k 1, 2, 3 All 5.0 V

to ground
VOUT low VOL VVFB = 2.7 V, RL = 15 k 1, 2, 3 All 1.1 V
to VREF
CURRENT SENSE section
Gain A 7/ 8/ 4, 5, 6 All 2.85 3.15 V/V
Maximum input signal VCOMP = 5.0 V 7/ 4, 5, 6 All 0.9 1.1 V
Input bias current IIB 1, 2, 3 All -10 A
Delay to output TD VVFB = 0 V, 3/ 9 01 - 08, 300 ns
VISENSE = 2 V (step input) 10, 11 10 400
VVFB = 0 V, 3/ 9 09,11,12 300

VISENSE = 0 to 2 V
(step input)
OUTPUT section
Output low voltage VOL ISINK = 20 mA 1, 2, 3 All 0.4 V
ISINK = 200 mA 2.2
Output high voltage VOH ISOURCE = 20 mA 1, 2, 3 All 13 V
ISOURCE = 200 mA 12
Rise time tr CL = 1000 pF 3/ 9 All 150 ns
10, 11 01 - 08, 10 200
Fall time tf CL = 1000 pF 3/ 9 All 150 ns
10, 11 01 - 08, 10 200

05 – 09,
UVLO saturation voltage UVLOSAT VCC = 5 V, ISINK = 10 mA 1, 2, 3 1.2 V
11,12
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Conditions 1/ 2/
Min Max
UNDER-VOLTAGE LOCKOUT section

01, 03,
Start threshold VTH 1, 2, 3 15 17 V
05, 07
02, 04,
06, 08, 09, 7.8 9.0
10, 11,12
Minimum operating 01,
VMIN After turn-on 1, 2, 3 9.0 11 V
voltage 05, 03
06, 07, 08,
7.0 8.2
09, 11,12
02, 04, 10 7.0 8.3
Pulse width modulation section

tON / 01, 02,
Maximum duty cycle 1, 2, 3 93 100 %
tOSC 05, 06
(max) 03, 04, 07,
46 50
08, 11
09,10,
9/ 94 100
12
01 – 09,
tON /
Minimum duty cycle 1, 2, 3 11 0 %
tOSC
(min) 9/ 10,12
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Conditions 1/ 2/
Min Max
TOTAL STANDBY CURRENT section
01 - 08,
Start-up current ISTART 1, 2, 3 1.0 mA
10
09, 11,
0.5
12
Operating supply current ICC VVFB = VISENSE = 0 V 1, 2, 3 All 17 mA
VCC zener voltage VZ ICC = 25 mA 1,2,3 05 – 08, 30 V

09, 10,
11, 12
1/ TA = TJ. Characteristics apply at VCC = 15 V (adjust VCC above the start threshold before setting at 15 V),
RT = 10 k and CT = 3.3 nF unless otherwise specified.
2/ Device types 09 and 11 supplied to this drawing has been characterized through all levels M, D and P of irradiation.
However, device type 11 is only tested at the “P” level. Device type 12 supplied to this drawing has been characterized
through all levels M, D, P, L and R of irradiation. However, device type 12 is only tested at the “R” level. Pre and Post
irradiation values are identical unless otherwise specified in table I. When performing post irradiation electrical
measurement for any RHA level, TA = +25C. The manufacturer supplying device types 09, 11, and 12 has performed
low dose rate irradiation test. The radiation end point limits for the noted parameters are guaranteed only for the conditions
as specified in MIL-STD-883, methods 1019, condition D for total dose of 30 krads (Si) for device types 09 and 11, and
a total dose of 100 krad(Si) for device type 12.
3/ These parameters are guaranteed if not tested.
4/ Temperature stability, sometimes referred to as average temperature coefficient, is described by the equation:
Temperature stability = VREF (max) – VREF (min) / TJ(max) – TJ(min). VREF (max) and VREF(min) are the maximum and
minimum reference voltage measured over the appropriate temperature range. Note that the extremes in voltage do not
necessarily occur at the extremes in temperature.
5/ Output frequency equals oscillator frequency for device types 01, 02, 05, 06, 09, and 12.
Output frequency is one half oscillator frequency for device types 03, 04, 07, and 08.
6/ For device types 09 and 12 only, this parameter is measured with RT = 10 k to VREF. This contributes approximately
300 A of current to the measurement. The total current flowing into the RT / CT pin will be approximately 300 A higher
than the measured value.
7/ Parameter measured at trip point of latch with VFB = 0 V.
8/ Gain is defined as :
VCOMP
A= ; 0 V  VISENSE  0.8 V
VSENSE
9/ Duty cycle is extensively characterized over temperature but, not production tested for device type 10.
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Case Y
Symbol Inches Millimeters

Min Max Min Max
A .0820 .1021 2.08 2.59
b .0150 .0190 0.38 0.48
c .0034 .0066 0.09 0.17
D .2695 .2833 6.85 7.20
E .2632 .2770 6.69 7.04
E1 .1780 .1921 4.52 4.88
e .0500 1.27
L .2781 .3081 7.07 7.83
Q .0299 .0401 0.76 1.02
FIGURE 1. Case outline.
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Device types All All All 01, 02 03, 04
Case outlines C and D H P 2 2

Terminal
Terminal symbol
number
1 COMP COMP COMP NC NC
2 NC VFB VFB COMP NC
3 VFB ISENSE ISENSE NC COMP
4 NC RT/CT RT/CT NC NC
5 ISENSE POWER GND GROUND VFB VFB

6 NC GROUND OUTPUT NC NC
7 RT/CT OUTPUT VCC ISENSE ISENSE

8 POWER GND VC VREF NC RT/CT
9 GROUND VCC --- NC NC
10 OUTPUT VREF --- RT/CT NC
11 VC --- --- NC NC
12 VCC --- --- GROUND POWER GND
13 NC --- --- NC GROUND
14 VREF --- --- NC NC
15 --- --- --- OUTPUT OUTPUT
16 --- --- --- NC NC
17 --- --- --- VCC VC

18 --- --- --- NC VCC
19 --- --- --- NC NC
20 --- --- --- VREF VREF
NOTES: Case outlines E and F are not available from an approved source.
NC = No connect.
FIGURE 2. Terminal connections.
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Device types All 11 and 12

Case outlines X Y
Terminal number Terminal symbol
1 NC COMP
2 COMP VFB
3 NC ISENSE
4 NC RT/CT
5 VFB NC
6 NC NC
7 ISENSE GROUND
8 NC OUTPUT
9 NC VCC
10 RT/CT VREF
11 NC ---
12 POWER GND ---
13 GROUND ---
14 NC ---
15 OUTPUT ---
16 NC ---
17 VC ---
18 VCC ---
19 NC ---
20 VREF ---
FIGURE 2. Terminal connections - continued.
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NOTE : Toggle flip flop used only in device types 03, 04, 07, and 08.
FIGURE 3. Logic diagram.
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4. VERIFICATION
4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with
MIL-PRF-38535 or as modified in the device manufacturer's Quality Management (QM) plan. The modification in the QM plan
shall not affect the form, fit, or function as described herein. For device class M, sampling and inspection procedures shall be in
accordance with MIL-PRF-38535, appendix A.
4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted
on all devices prior to qualification and technology conformance inspection. For device class M, screening shall be in
accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection.
4.2.1 Additional criteria for device class M.
a. Burn-in test, method 1015 of MIL-STD-883.
(1) Test condition A, B, C, or D. The test circuit shall be maintained by the manufacturer under document revision
level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall
specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in
method 1015.
(2) TA = +125C, minimum.
b. Interim and final electrical test parameters shall be as specified in table IIA herein.
4.2.2 Additional criteria for device classes Q and V.
a. The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the
device manufacturer's QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under
document revision level control of the device manufacturer's Technology Review Board (TRB) in accordance with
MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall
specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in
method 1015 of MIL-STD-883.
b. Interim and final electrical test parameters shall be as specified in table IIA herein.
c. Additional screening for device class V beyond the requirements of device class Q shall be as specified in
MIL-PRF-38535, appendix B.
4.3 Qualification inspection for device classes Q and V. Qualification inspection for device classes Q and V shall be in
accordance with MIL-PRF-38535. Inspections to be performed shall be those specified in MIL-PRF-38535 and herein for groups
A, B, C, D, and E inspections (see 4.4.1 through 4.4.4).
4.4 Conformance inspection. Technology conformance inspection for classes Q and V shall be in accordance with
MIL-PRF-38535 including groups A, B, C, D, and E inspections and as specified. Quality conformance inspection for device
class M shall be in accordance with MIL-PRF-38535, appendix A and as specified herein. Inspections to be performed for
device class M shall be those specified in method 5005 of MIL-STD-883 and herein for groups A, B, C, D, and E inspections
(see 4.4.1 through 4.4.4).
4.4.1 Group A inspection.
a. Tests shall be as specified in table IIA herein.
b. Subgroups 7 and 8 in table I, method 5005 of MIL-STD-883 shall be omitted
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TABLE IIA. Electrical test requirements.
Test requirements Subgroups Subgroups

(in accordance with (in accordance with
MIL-STD-883, MIL-PRF-38535, table III)
method 5005, table I)
Device Device Device
class M class Q class V
Interim electrical --- --- 1
parameters (see 4.2)
Final electrical 1, 2, 3, 4 1/ 1, 2, 3, 4 1/ 1, 2, 3, 4 1/ 3/
Group A test 1, 2, 3, 4, 5, 6, 1, 2, 3, 4, 5, 6, 1, 2, 3, 4, 5, 6,
requirements (see 4.4) 9, 10, 11 2/ 9, 10, 11 2/ 9, 10, 11 2/
Group C end-point electrical 1 1 1 3/
Group D end-point electrical 1 1 1
Group E end-point electrical --- 1, 4, 9 1, 4, 9
1/ PDA applies to subgroup 1.

2/ Subgroups 9, 10, and 11 are guaranteed if not tested to the limits specified in table I.
3/ Delta limits as specified in table IIB shall be required where specified, and delta limits
shall be computed with reference to the previous endpoint electrical parameters.
TABLE IIB. Burn-in and operating life test delta parameters. TA = +25C. 1/
Parameters Device Delta limits Units

types Min Max
09, 10,
Reference output voltage -50 +50 mV
11, 12
09, 10,
CT discharge current -0.5 +0.5 mA
11, 12
09, 10,
Error amp input bias current -0.2 +0.2 A
11, 12
09, 10,
Operating supply current -1.0 +1.0 mA
11, 12
1/ Deltas are performed at room temperature.
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4.4.2 Group C inspection. The group C inspection end-point electrical parameters shall be as specified in table IIA herein.
4.4.2.1 Additional criteria for device class M. Steady-state life test conditions, method 1005 of MIL-STD-883:
a. Test condition A, B, C, or D. The test circuit shall be maintained by the manufacturer under document revision level
control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the
inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1005 of
MIL-STD-883.
b. TA = +125C, minimum.
c. Test duration: 1,000 hours, except as permitted by method 1005 of MIL-STD-883.
4.4.2.2 Additional criteria for device classes Q and V. The steady-state life test duration, test condition and test temperature,
or approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with MIL-PRF-38535. The
test circuit shall be maintained under document revision level control by the device manufacturer's TRB in accordance with
MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the
inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1005 of
MIL-STD-883.
4.4.3 Group D inspection. The group D inspection end-point electrical parameters shall be as specified in table IIA herein.
4.4.4 Group E inspection. Group E inspection is required only for parts intended to be marked as radiation hardness assured
(see 3.5 herein).
a. End-point electrical parameters shall be as specified in table IIA herein.
b. For device classes Q and V, the devices or test vehicle shall be subjected to radiation hardness assured tests as
specified in MIL-PRF-38535 for the RHA level being tested. For device class M, the devices shall be subjected to
radiation hardness assured tests as specified in MIL-PRF-38535, appendix A for the RHA level being tested. All device
classes must meet the postirradiation end-point electrical parameter limits as defined in table I at
TA = +25C 5C, after exposure, to the subgroups specified in table IIA herein.
4.4.4.1 Total dose irradiation testing. Total dose irradiation testing shall be performed in accordance with MIL-STD-883 method
1019, condition D for device types 09, 11, and 12, and as specified herein.
5. PACKAGING
5.1 Packaging requirements. The requirements for packaging shall be in accordance with MIL-PRF-38535 for device classes
Q and V or MIL-PRF-38535, appendix A for device class M.
6. NOTES
6.1 Intended use. Microcircuits conforming to this drawing are intended for use for Government microcircuit applications
(original equipment), design applications, and logistics purposes.
6.1.1 Replaceability. Microcircuits covered by this drawing will replace the same generic device covered by a contractor-
prepared specification or drawing.
6.2 Configuration control of SMD's. All proposed changes to existing SMD's will be coordinated with the users of record for
the individual documents. This coordination will be accomplished using DD Form 1692, Engineering Change Proposal.
6.3 Record of users. Military and industrial users should inform DLA Land and Maritime when a system application requires
configuration control and which SMD's are applicable to that system. DLA Land and Maritime will maintain a record of users and
this list will be used for coordination and distribution of changes to the drawings. Users of drawings covering microelectronic
devices (FSC 5962) should contact DLA Land and Maritime-VA, telephone (614) 692-8108.
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6.4 Comments. Comments on this drawing should be directed to DLA Land and Maritime-VA, Columbus, Ohio 43218-3990,
or telephone (614) 692-0540.
6.5 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in
MIL-PRF-38535 and MIL-HDBK-1331.
6.6 Sources of supply.
6.6.1 Sources of supply for device classes Q and V. Sources of supply for device classes Q and V are listed in
MIL-HDBK-103 and QML-38535. The vendors listed in MIL-HDBK-103 and QML-38535 have submitted a certificate of
compliance (see 3.6 herein) to DLA Land and Maritime-VA and have agreed to this drawing.
6.6.2 Approved sources of supply for device class M. Approved sources of supply for class M are listed in MIL-HDBK-103.
The vendors listed in MIL-HDBK-103 have agreed to this drawing and a certificate of compliance (see 3.6 herein) has been
submitted to and accepted by DLA Land and Maritime-VA.
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APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-86704
A.1 SCOPE
A.1.1 Scope. This appendix establishes minimum requirements for microcircuit die to be supplied under the Qualified
Manufacturers List (QML) Program. QML microcircuit die meeting the requirements of MIL-PRF-38535 and the manufacturers
approved QM plan for use in monolithic microcircuits, multi-chip modules (MCMs), hybrids, electronic modules, or devices using
chip and wire designs in accordance with MIL-PRF-38534 are specified herein. Two product assurance classes consisting of
military high reliability (device class Q) and space application (device class V) are reflected in the Part or Identification Number
(PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.
A.1.2 PIN. The PIN is as shown in the following example:
5962 - 86704 10 V 9 A
Federal RHA Device Device Die Die

stock class designator type class code details
designator (see A.1.2.1) (see A.1.2.2) designator (see A.1.2.4)
\ / (see A.1.2.3)
\/
Drawing number
A.1.2.1 RHA designator. Device classes Q and V RHA identified die meet the MIL-PRF-38535 specified RHA levels. A dash
(-) indicates a non-RHA die.
A.1.2.2 Device type(s). The device type(s) identify the circuit function as follows:
Device type Generic number Circuit function
10 1/ 1843-SP Off-line current mode pulse width modulator controller

12 1/ 1843B-SP Off-line current mode pulse width modulator controller
A.1.2.3 Device class designator.
Device class Device requirements documentation
Q or V Certification and qualification to the die requirements of MIL-PRF-38535
______
1/ VREF parameter is sensitive to very high temperature die attach/die assembly processes. Processing conditions should
not exceed 170C per 24 hours or 245C per 40 seconds.
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APPENDIX A
A.1.2.4 Die details. The die details designation is a unique letter which designates the die's physical dimensions, bonding
pad location(s) and related electrical function(s), interface materials, and other assembly related information, for each product
and variant supplied to this appendix.
A.1.2.4.1 Die physical dimensions.
Die type Figure number
10 A-1
12 A-2
A.1.2.4.2 Die bonding pad locations and electrical functions.
10 A-1
12 A-2
A.1.2.4.3 Interface materials.
10 A-1
12 A-2
A.1.2.4.4 Assembly related information.
10 A-1
12 A-2
A.1.3 Absolute maximum ratings. See paragraph 1.3 herein for details.
A.1.4 Recommended operating conditions. See paragraph 1.4 herein for details.
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APPENDIX A
A.2 APPLICABLE DOCUMENTS.
A.2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a
part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in
the solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATION
MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.
DEPARTMENT OF DEFENSE STANDARD
MIL-STD-883 - Test Method Standard Microcircuits.
DEPARTMENT OF DEFENSE HANDBOOKS
MIL-HDBK-103 - List of Standard Microcircuit Drawings.

MIL-HDBK-780 - Standard Microcircuit Drawings.
(Copies of these documents are available online at https://quicksearch.dla.mil.)
A.2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the
text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a
specific exemption has been obtained.
A.3 REQUIREMENTS
A.3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with
MIL-PRF-38535 and as specified herein or as modified in the device manufacturer’s Quality Management (QM) plan. The
modification in the QM plan shall not affect the form, fit, or function as described herein.
A.3.2 Design, construction and physical dimensions. The design, construction, and physical dimensions shall be as specified
in MIL-PRF-38535 and herein and the manufacturer’s QM plan for device classes Q and V.
A.3.2.1 Die physical dimensions. The die physical dimensions shall be as specified in A.1.2.4.1 and on figure A-1.
A.3.2.2 Die bonding pad locations and electrical functions. The die bonding pad locations and electrical functions shall be as
specified in A.1.2.4.2 and on figure A-1.
A.3.2.3 Interface materials. The interface materials for the die shall be as specified in A.1.2.4.3 and on figure A-1.
A.3.2.4 Assembly related information. The assembly related information shall be as specified in A.1.2.4.4 and on figure A-1.
A.3.2.5 Radiation exposure circuit. The radiation exposure circuit shall be as defined in paragraph 3.2.4 herein.
A.3.3 Electrical performance characteristics and post-irradiation parameter limits. Unless otherwise specified herein, the
electrical performance characteristics and post-irradiation parameter limits are as specified in table I of the body of this
document.
A.3.4 Electrical test requirements. The wafer probe test requirements shall include functional and parametric testing
sufficient to make the packaged die capable of meeting the electrical performance requirements in table I.
A.3.5 Marking. As a minimum, each unique lot of die, loaded in single or multiple stack of carriers, for shipment to a
customer, shall be identified with the wafer lot number, the certification mark, the manufacturer’s identification and the PIN listed
in A.1.2 herein. The certification mark shall be a “QML” or “Q” as required by MIL-PRF-38535.
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APPENDIX A
A.3.6 Certification of compliance. For device classes Q and V, a certificate of compliance shall be required from a
QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see A.6.4 herein). The certificate of
compliance submitted to DLA Land and Maritime -VA prior to listing as an approved source of supply for this appendix shall
affirm that the manufacturer’s product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and the
requirements herein.
A.3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535
shall be provided with each lot of microcircuit die delivered to this drawing.
A.4 VERIFICATION
A.4.1 Sampling and inspection. For device classes Q and V, die sampling and inspection procedures shall be in accordance
with MIL-PRF-38535 or as modified in the device manufacturer’s Quality Management (QM) plan. The modifications in the QM
plan shall not affect the form, fit, or function as described herein.
A.4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and as defined in the
manufacturer’s QM plan. As a minimum, it shall consist of:
a. Wafer lot acceptance for class V product using the criteria defined in MIL-STD-883, method 5007.
b. 100% wafer probe (see paragraph A.3.4 herein).
c. 100% internal visual inspection to the applicable class Q or V criteria defined in MIL-STD-883, method 2010 or the
alternate procedures allowed in MIL-STD-883, method 5004.
A.4.3 Conformance inspection.
A.4.3.1 Group E inspection. Group E inspection is required only for parts intended to be identified as radiation assured (see
A.3.5 herein). RHA levels for device classes Q and V shall be as specified in MIL-PRF-38535. End point electrical testing of
packaged die shall be as specified in table IIA herein. Group E tests and conditions are as specified in paragraphs 4.4.4 and
4.4.4.1 herein.
A.5 DIE CARRIER
A.5.1 Die carrier requirements. The requirements for the die carrier shall be accordance with the manufacturer’s QM plan or
as specified in the purchase order by the acquiring activity. The die carrier shall provide adequate physical, mechanical and
electrostatic protection.
A.6 NOTES
A.6.1 Intended use. Microcircuit die conforming to this drawing are intended for use in microcircuits built in accordance with
MIL-PRF-38535 or MIL-PRF-38534 for government microcircuit applications (original equipment), design applications, and
logistics purposes.
A.6.2 Comments. Comments on this appendix should be directed to DLA Land and Maritime -VA, Columbus, Ohio,
43218-3990 or telephone (614)-692-0540.
A.6.3 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in
MIL-PRF-38535 and MIL-HDBK-1331.
A.6.4 Sources of supply for device classes Q and V. Sources of supply for device classes Q and V are listed in QML-38535.
The vendors listed within MIL-HDBK-103 and QML-38535 have submitted a certificate of compliance (see A.3.6 herein) to
DLA Land and Maritime -VA and have agreed to this drawing.
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APPENDIX A
Device type 10
FIGURE A-1. Die bonding pad locations and electrical functions.
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APPENDIX A
Device type 10 – continued.
Die physical dimensions.
Die size: 1803 m x 2438 m
Die thickness: 15  1 mils
Interface materials.
Top metallization: AlCu (0.5%)
Thickness: 20.0 kÅ  2 kÅ
Backside metallization: None
Glassivation.
Type: TEOS
Thickness: 7.0 kǺ
Substrate: P(111) 10-21 ohm-cm
Assembly related information.
Substrate potential: Insulated (backside of the die is left floating in factory package assembly).
Special assembly instructions: None
FIGURE A-1. Die bonding pad locations and electrical functions - continued.
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APPENDIX A
Device type 12
FIGURE A-2. Die bonding pad locations and electrical functions.
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APPENDIX A
Description Pad number X minimum Y minimum X maximum Y maximum
COMP 1 55.88 1935.458 170.181 2052.3
VFB 2 55.88 1651.829 170.181 1768.671
ISENSE 3 55.88 925.028 170.181 1041.87
Rt/Ct 4 55.88 481.858 170.181 598.7
N/C 5 165.623 74.746 279.925 191.588
N/C 6 343.425 74.746 457.726 191.588
N/C 7 521.227 74.746 635.528 191.588
N/C 8 704.109 74.746 818.41 191.588
N/C 9 881.91 74.746 996.211 191.588
N/C 10 1062.932 74.746 1177.234 191.588
GND 11 1662.756 384.359 1777.057 501.201
GND 12 1449.69 481.858 1563.991 598.7
OUTPUT 13 1620.685 889.041 1734.986 1005.883
VCC 14 1620.685 1172.67 1734.986 1289.512
VCC 15 1620.685 1358.803 1734.986 1475.644
VREF 16 1620.685 1731.066 1734.986 1847.907
N/C 17 1523.03 2254.009 1637.331 2370.85
N/C 18 1345.228 2254.009 1459.529 2370.85
N/C 19 1162.346 2254.009 1276.647 2370.85
N/C 20 984.544 2254.009 1098.846 2370.85
N/C 21 806.742 2254.009 921.043 2370.85
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APPENDIX A
Die physical dimensions.
Die size: 1803.4 m x 2438.4 m
Die thickness: 15  1 mils
Interface materials.
Top metallization: AlCu (0.5%)
Thickness: 20.0 kÅ  2 kÅ
Backside metallization: None
Glassivation.
Type: LTO
Thickness: 7.0 kǺ
Substrate: P(111) 10-21 ohm-cm
Assembly related information.
Substrate potential: Insulated (backside of the die is left floating in factory package assembly).
Special assembly instructions: None
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STANDARD MICROCIRCUIT DRAWING BULLETIN
DATE: 20-12-03
Approved sources of supply for SMD 5962-86704 are listed below for immediate acquisition information only and
shall be added to MIL-HDBK-103 and QML-38535 during the next revision. MIL-HDBK-103 and QML-38535 will be
revised to include the addition or deletion of sources. The vendors listed below have agreed to this drawing and a
certificate of compliance has been submitted to and accepted by DLA Land and Maritime-VA. This information
bulletin is superseded by the next dated revision of MIL-HDBK-103 and QML-38535. DLA Land and Maritime
maintains an online database of all current sources of supply at https://landandmaritimeapps.dla.mil/programs/smcr/.
Standard Vendor Vendor

microcircuit drawing CAGE similar
PIN 1/ number PIN 2/
5962-8670401CA 34333 SG1842J-DESC
3/ SG1842J/883B
5962-8670401DA 01295 UC1842W883B
5962-8670401EA 3/ SG1842J/883B
5962-8670401FA 3/ SG1842F/883B
5962-8670401HA 34333 SG1842F-DESC
3/ SG1842F/883B
5962-8670401PA 01295 UC1842J883B
34333 SG1842Y-DESC
3/ SG1842Y/883B
3/ IP1842J-DESC
5962-8670401XA 01295 UC1842L883B
5962-86704012A 34333 SG1842L/883B
5962-8670401VPA 01295 UC1842JQMLV
5962-8670401VXA 01295 UC1842LQMLV
5962-8670401V2A 3/ UC1842LQMLV
5962-8670402CA 34333 SG1843J-DESC
3/ SG1843J/883B
5962-8670402DA 01295 UC1843W883B
5962-8670402EA 3/ SG1843J/883B
5962-8670402FA 3/ SG1843F/883B
5962-8670402HA 34333 SG1843F-DESC
3/ SG1843F/883B
5962-8670402PA 01295 UC1843J883B
34333 SG1843Y-DESC
3/ SG1843Y/883B
3/ IP1843J-DESC
5962-8670402XA 01295 UC1843L883B
1 of 4

STANDARD MICROCIRCUIT DRAWING BULLETIN – Continued.
DATE: 20-12-03

5962-86704022A 34333 SG1843L-DESC
3/ SG1843L/883B
5962-8670402VPA 01295 UC1843JQMLV
5962-8670402VXA 01295 UC1843LQMLV
5962-8670402V2A 3/ UC1843LQMLV
5962-8670403CA 34333 SG1844J-DESC
3/ SG1844J/883B
5962-8670403DA 01295 UC1844W883B
5962-8670403EA 3/ SG1844J/883B
5962-8670403FA 3/ SG1844F/883B
5962-8670403HA 34333 SG1844F-DESC
3/ SG1844F/883B
5962-8670403PA 01295 UC1844J883B
34333 SG1844Y-DESC
3/ SG1844Y/883B
3/ IP1844J-DESC
5962-8670403XA 01295 UC1844L883B
5962-86704032A 34333 SG1844L-DESC
3/ SG1844L/883B
5962-8670403VPA 01295 UC1844JQMLV
5962-8670403VXA 01295 UC1844LQMLV
5962-8670403V2A 3/ UC1844LQMLV
5962-8670404CA 34333 SG1845J-DESC
3/ SG1845J/883B
5962-8670404DA 01295 UC1845W883B
5962-8670404EA 3/ SG1845J/883B
5962-8670404FA 3/ SG1845F/883B
5962-8670404HA 34333 SG1845F-DESC
3/ SG1845F/883B
2 of 4

DATE: 20-12-03

5962-8670404PA 01295 UC1845J883B
34333 SG1845Y-DESC
3/ SG1845Y/883B
3/ IP1845J-DESC
5962-8670404XA 01295 UC1845L883B
5962-86704042A 34333 SG1845L-DESC
3/ SG1845L/883B
5962-8670404VPA 01295 UC1845JQMLV
5962-8670404VXA 01295 UC1845LQMLV
5962-8670404V2A 3/ UC1845LQMLV
5962-8670405DA 01295 UC1842AW/883B
5962-8670405PA 01295 UC1842AJ883B
5962-8670405XA 01295 UC1842AL883B
5962-8670405VPA 01295 UC1842AJQMLV
5962-8670405VXA 3/ UC1842ALQMLV
5962-8670405V2A 3/ UC1842ALQMLV
5962-8670406DA 01295 UC1843AW/883B
5962-8670406PA 01295 UC1843AJ883B
5962-8670406XA 01295 UC1843AL883B
5962-8670406VPA 01295 UC1843AJQMLV
5962-8670406VXA 01295 UC1843ALQMLV
5962-8670406V2A 3/ UC1843ALQMLV
5962-8670407DA 01295 UC1844AW/883B
5962-8670407PA 01295 UC1844AJ883B
5962-8670407XA 01295 UC1844AL883B
5962-8670407VPA 01295 UC1844AJQMLV
5962-8670407VXA 3/ UC1844ALQMLV
5962-8670407V2A 3/ UC1844ALQMLV
3 of 4

DATE: 20-12-03

5962-8670408DA 01295 UC1845AW/883B
5962-8670408PA 01295 UC1845AJ883B
5962-8670408XA 01295 UC1845AL883B
5962-8670408VPA 01295 UC1845AJQMLV
5962-8670408VXA 01295 UC1845ALQMLV
5962-8670408V2A 3/ UC1845ALQMLV
5962-8670409VPA 01295 UC1843AJG-SP
5962-8670410VPA 01295 UC1843JG-SP
5962-8670410V9A 01295 UC1843KGD-SP
5962P8670409VPA 01295 UC1843AJG-SP
5962P8670409VYC 01295 UC1843AHKU-SP
5962P8670411VPA 01295 UC1845AJG-SP
5962P8670411VYC 01295 UC1845AHKU-SP
5962R8670412VYC 01295 UC1843BHKU-SP
5962R8670412V9A 01295 UC1843BKGD-SP
1/ The lead finish shown for each PIN representing a hermetic

package is the most readily available from the manufacturer
listed for that part. If the desired lead finish is not listed contact
the vendor to determine its availability.
2/ Caution. Do not use this number for item acquisition.
Items acquired to this number may not satisfy the performance
requirements of this drawing.
3/ Not available from an approved source of supply.
Vendor CAGE Vendor name

number and address
01295 Texas Instruments, Inc.

Semiconductor Group
8505 Forest Lane
P.O. Box 660199
Dallas, TX 75243
34333 Microsemi Analog Mixed Signal Group

11861 Western Avenue
Garden Grove, CA 92841-2119
The information contained herein is disseminated for convenience only and the
Government assumes no liability whatsoever for any inaccuracies in the
information bulletin.
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REVISIONS

LTR DESCRIPTION DATE (YR-MO-DA) APPROVED

CURRENT CAGE CODE 67268

DISTRIBUTION STATEMENT A. Approved for public release. Distribution is unlimited.

1.2 PIN. The PIN is as shown in the following examples.

For device class M and Q:

Federal RHA Device Case Lead

For device class V:

Federal RHA Device Device Case Lead

Device type Generic number Circuit function

01 1842 Off-line current mode pulse width modulator controller

Device class Device requirements documentation

M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-

Q or V Certification and qualification to MIL-PRF-38535

Outline letter Descriptive designator Terminals Package style

C GDIP1-T14 or CDIP2-T14 14 Dual-in-line

1.3 Absolute maximum ratings. 1/ 2/ 3/

Supply voltage (VCC) ................................................................................................ 30 V

1.4 Recommended operating conditions.

Supply voltage (VCC):

1.5 Radiation features.

Maximum total dose available (dose rate = 10 mrads(Si)/s):

DEPARTMENT OF DEFENSE SPECIFICATION

MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.

DEPARTMENT OF DEFENSE STANDARDS

MIL-STD-883 - Test Method Standard Microcircuits.

DEPARTMENT OF DEFENSE HANDBOOKS

MIL-HDBK-103 - List of Standard Microcircuit Drawings.

(Copies of these documents are available online at https://quicksearch.dla.mil.)

3.2.2 Terminal connections. The terminal connections shall be as specified on figure 2.

3.2.3 Logic diagram. The logic diagram shall be as specified on figure 3.

TABLE I. Electrical performance characteristics.

Line regulation VRLINE 12 V  VIN  25 V 1, 2, 3 All 20 mV

Load regulation VRLOAD 1.0 mA  IO  20 mA 1, 2, 3 All 25 mV

Over line, load, and 01-11 4.90 5.10

Voltage stability 12 V  VCC  25 V 4, 5, 6 All 1.0 %

Discharge current VRT/CT = 2 V 6/ 1 05 – 09, 7.8 8.8 mA

Input bias current IIB 1, 2, 3 All -1.0 A

Open loop voltage gain AVOL 2.0 V  VO  4.0 V 4, 5, 6 All 65 dB

Unity gain bandwidth GBW 3/ 4, 5, 6 01 - 08, 10 0.55 MHz

See footnotes at end of table.

TABLE I. Electrical performance characteristics – Continued.

ERROR AMP section – continued.

VOUT high VOH VVFB = 2.3 V, RL = 15 k 1, 2, 3 All 5.0 V

Gain A 7/ 8/ 4, 5, 6 All 2.85 3.15 V/V

Maximum input signal VCOMP = 5.0 V 7/ 4, 5, 6 All 0.9 1.1 V

Input bias current IIB 1, 2, 3 All -10 A

Delay to output TD VVFB = 0 V, 3/ 9 01 - 08, 300 ns

VISENSE = 2 V (step input) 10, 11 10 400

VVFB = 0 V, 3/ 9 09,11,12 300

Output low voltage VOL ISINK = 20 mA 1, 2, 3 All 0.4 V

ISINK = 200 mA 2.2

Output high voltage VOH ISOURCE = 20 mA 1, 2, 3 All 13 V

Rise time tr CL = 1000 pF 3/ 9 All 150 ns

10, 11 01 - 08, 10 200

Fall time tf CL = 1000 pF 3/ 9 All 150 ns

10, 11 01 - 08, 10 200

See footnotes at end of table.

TABLE I. Electrical performance characteristics – Continued.