Prem Prakash Choudhary: Premsprakash@gmail - Co M

Prem Prakash Choudhary
Personal Information:
Address: s/o Banshi Lal Choudhary, Raoto Ka Darwaza,
Nathdwara, Pin-Code:
State: 313301.
Rajasthan.
Country: India.
[email protected]
Phone: 91-9313046257. Email: m
Sex: Male. Date of Birth: 26 / 01/ 1981.
Work Experience: (From August 2010)

Assistant Professor,
Department of Electronics and Communication Engineering,
Techno-India NJR College of Technology, Udaipur.
Job Responsibility: Teaching Subjects like Electronics Devices and Circuits,

Electronic Properties and Materials, I C Technology, VLSI.
Research Work: (From 17 July 2008 till Dec 2009)

Current Project: “Development of Biosensors and Microtechniques for
analysis of pesticide residues, aflatoxin, heavy metals and bacterial
contamination in milk.” and “Design and Development of Prototype Micro-
Fluidic MEMS.”
Job Responsibility: Mask designing, Artwork generation, Mask Making,
Photolithography, Anisotropic etching, Metallization, Oxidation, Diffusion,
and other basic processes in Microelectronics.
Research Centre: Centre for Applied Research in Electronics (C.A.R.E.).
Indian Institute of Technology Delhi.
(www.care.iitd.ac.in). New Delhi – 110016, India.
Academics:
Institution: Indian Institute of Technology Delhi. ( www.iitd.ac.in)
Degree: Master of Technology in Solid State Materials. (2005-
2007). CGPA: 7.9 out of ten point scale.
Institution: Mohan Lal Sukhadia University, Udaipur. ( www.mlsu.org )

Degree: Master of Science in Physics with Condensed Matter physics as
specialization securing 65 %, ( 2002-2004 ).
Institution: Mohan Lal Sukhadia University, Udaipur. ( www.mlsu.org )
Degree: Bachelor of Science with Physics, Chemistry and Mathematics
securing 65 %, (1999-2002)
Institution: Rajasthan Board of Secondary Education, Ajmer.

Class XII: Govt. S. S. School, Secured 65 % of marks, (1998-
1999). Class X: S.J.P.S.S. School, Secured 71 % of marks, (1995-
1996).
M.Tech. (Solid State Materials) Courses:

1
) Electronic Properties of Materials 2) Materials Technology
3
) Physics of Semiconductor Devices 4) Vacuum Science and Cryogenics
5 6) Science and Technology of Thin
) Characterization of Materials Films
7
) Semiconductor Device Technology 8) Nanostructured Materials
9
) I C Technology 10) Quantum Heterostructures
11) C++ Programming language
M. Tech Major Project ( One year research project May 2006-April 2007)
Objective:”Synthesis and Characterization of Transition metal doped
(cobalt) SnO2 and TiO2 thin films and comparison of their physical
properties.”
Project Guide: Prof. S. C. Kashyap
Aim: The aim of the project is to search materials for the Spintronics
application.
Abstract of Project work: We have used a simple and cost effective
technique named spray pyrolysis to deposit Cobalt doped TiO2 and SnO2
films on glass and quartz substrate.
We have deposited TiO2 and SnO2 films with different Cobalt concentration
(5%, 10 % and 15%) with an ambition plan of obtaining room temperature
ferromagnetism (RTFM) in thin films of both the oxides and to study their
physical (microstructure, magnetic, optical and electronic ) behavior. The X-
ray diffraction results show that the films are polycrystalline without any
detectable secondary phase. Both types of films are transparent with nearly ~
70% of transmittance observed in the visible range. The incorporation of
Cobalt in SnO2 and TiO2 is manifested by the change in the value of bandgap.
The TiO2 films are insulating in the nature while SnO2 are semiconducting.
Both the films show very weak VSM signal for ferromagnetism.
Research Centre: Thin Film Laboratory, Department of

Physics, Indian Institute of Technology
Delhi.
Familiar with Characterization Techniques:

1) X-Ray Diffraction.
2) UV-VIS-NIR Spectrometer
3) Vibrating Sample Magnetometer
4) Two and Four Probe Technique
References with email ID:
1) Prof. S. C. Kashyap,
Department of Physics, Indian Institute of Technology Delhi.
Email: [email protected]
2) Associate Prof. Sujeet Chaudhary,
Department of Physics, Indian Institute of Technology Delhi.
Email: [email protected]
Scholastic Achievements:
1) Qualified Graduate Aptitude Test for Engineering (GATE 2005) in
Physics discipline with all India rank (AIR) of 90 and with a percentile of
97.42.
2) Qualified State Lecturership Eligibility Test (S.L.E.T. 2005) in
Physics discipline.
Other Courses:
VLSI Design: Analog Design, Digital Design, FPGA Design Flow, FPGA
Trainer Kit, CPLD, Hardware description language, VHDL programming
language, Modelsim, Xilinx.
Computer Skills:
Operating Systems: MSDOS ,WINDOWS 95/98/NT, WINDOWS XP
Computer Language: C and C++
Technical Drawing: IntelliCAD 2001
Office Applications: Microsoft Powerpoint, Excel, Word.
Other Interests and Hobbies:
Cricket, Martial Arts (Karate), Listening Music and Singing.

Prem Prakash Choudhary: Premsprakash@gmail - Co M

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Prem Prakash Choudhary: Premsprakash@gmail - Co M

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Prem Prakash Choudhary

Work Experience: (From August 2010)

Job Responsibility: Teaching Subjects like Electronics Devices and Circuits,

Research Work: (From 17 July 2008 till Dec 2009)

Institution: Mohan Lal Sukhadia University, Udaipur. ( www.mlsu.org )

Institution: Rajasthan Board of Secondary Education, Ajmer.

M.Tech. (Solid State Materials) Courses:

Research Centre: Thin Film Laboratory, Department of

Familiar with Characterization Techniques:

References with email ID:

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