FCF10A20 ThinkiSemiconductor
FCF10A20 ThinkiSemiconductor
FCF10A20 ThinkiSemiconductor
.100(2.55)
.112(2.85)
.165(4.2)
.272(6.9)
.248(6.3)
.381(9.7)
Low forward voltage drop .134(3.4)
.130(3.3)
.118(3.0)
High current capability .114(2.9)
.606(15.4)
.583(14.8)
Application
Automotive Inverters/Solar Inverters
Plating Power Supply,SMPS and UPS .114(2.9)
.071(1.8) .098(2.5)
Car Audio Amplifiers and Sound Device Systems
.512(13.0)
.543(13.8)
.161(4.1)MAX
.055(1.4)
.055(1.4)
.032(.8)
.039(1.0)
MAX
.035(0.9)
Mechanical Data .011(0.3)
NOTES : (1) Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
(3) Thermal Resistance junction to case.
10 100
Pulse Width 8.3ms
(JEDEC Method)
8 80
CURRENT, AMPERES
AMPERES
6 60
4 40
2 20
60 Hz Resistive or
Inductive load
0 0
0 50 100 150 1 10 100
FCF10A20
o
TJ=125 C
100
FCF10A40
10
MICROAMPERES
FCF10A60
AMPERES
10
o
TJ=25 C
1
1
o
TJ=25 C
PULSE WIDTH=300uS
1% DUTY CYCLE
0.1 0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 20 40 60 80 100
100
10
0.1 1.0 4.0 10 100