FCF10A20 ThinkiSemiconductor

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FCF10A20 thru FCF10A60 ®

FCF10A20 thru FCF10A60 Pb


Pb Free Plating Product
10.0 Ampere Insulated Full-pak Common Cathode Fast Recovery Rectifier
ITO-220AB Unit : inch (mm)
Features
 Fast switching for high efficiency .406(10.3) .189(4.8)

.100(2.55)
.112(2.85)
.165(4.2)


.272(6.9)
.248(6.3)
.381(9.7)
Low forward voltage drop .134(3.4)
.130(3.3)

.118(3.0)
High current capability .114(2.9)

 Low reverse leakage current


 High surge current capability

.606(15.4)
.583(14.8)
Application
 Automotive Inverters/Solar Inverters
 Plating Power Supply,SMPS and UPS .114(2.9)
.071(1.8) .098(2.5)
 Car Audio Amplifiers and Sound Device Systems

.512(13.0)
.543(13.8)
.161(4.1)MAX
.055(1.4)
.055(1.4)
.032(.8)
.039(1.0)
MAX
.035(0.9)
Mechanical Data .011(0.3)

 Case:Fully molded isolation TO-220FH .1 .1


(2.55) (2.55)
 Epoxy: UL 94V-0 rate flame retardant
 Terminals: Solderable per MIL-STD-202
method 208 Case Case Case Case
 Polarity: As marked on diode body
 Mounting position: Any
Positive Negative * Doubler *Reverse Doubler
Common Cathode Common Anode Tandem Polarity Tandem Polarity
 Weight: 2.0 gram approximately Prefix "FCF" Suffix "FRF"
Available for Mass Production
*

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS


Rating at 25oC ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.

SYMBOL FCF10A20 FCF10A40 FCF10A60 UNIT


Maximum Recurrent Peak Reverse Voltage VRRM 200 400 600 V

Maximum RMS Voltage VRMS 140 280 420 V

Maximum DC Blocking Voltage VDC 200 400 600 V

Maximum Average Forward Rectified


o IF(AV) 10.0 A
Current TC=100 C

Peak Forward Surge Current, 8.3ms single


Half sine-wave superimposed on rated load IFSM 100 A
(JEDEC method)

Maximum Instantaneous Forward Voltage


VF 0.98 1.3 1.7 V
@ 5.0 A

Maximum DC Reverse Current @TJ=25 C


o
10.0 uA
o IR
At Rated DC Blocking Voltage @TJ=125 C 250 uA

Maximum Reverse Recovery Time (Note 1) Trr 35 nS

Typical junction Capacitance (Note 2) CJ 65 pF


o
Typical Thermal Resistance (Note 3) R JC 2.2 CW
Operating Junction and Storage -55 to +150 o
TJ, TSTG C
Temperature Range

NOTES : (1) Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
(3) Thermal Resistance junction to case.

Rev.05 Page 1/2

© 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/


FCF10A20 thru FCF10A60 ®

FIG.1 - FORWARD CURRENT DERATING CURVE FIG.2 - MAXIMUM NON-REPETITIVE


PEAK FORWARD SURGE CURRENT

10 100
Pulse Width 8.3ms

PEAK FORWARD SURGE CURRENT,


Single Half-Sire-Wave
AVERAGE FORWARD RECTIFIED

(JEDEC Method)
8 80
CURRENT, AMPERES

AMPERES
6 60

4 40

2 20

60 Hz Resistive or
Inductive load
0 0
0 50 100 150 1 10 100

o NUMBER OF CYCLES AT 60Hz


CASE TEMPERATURE, C

FIG.3 - TYPICAL INSTANTANEOUS FIG.4 - TYPICAL REVERSE CHARACTERISTICS


FORWARD CHARACTERISTICS
100 1000
IINSTANTANEOUS FORWARD CURRENT,

INSTANTANEOUS REVERSE CURRENT,

FCF10A20
o
TJ=125 C
100
FCF10A40
10
MICROAMPERES

FCF10A60
AMPERES

10

o
TJ=25 C
1
1

o
TJ=25 C
PULSE WIDTH=300uS
1% DUTY CYCLE
0.1 0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 20 40 60 80 100

INSTANTANEOUS FORWARD VOLTAGE, PERCENT OF RATED PEAK REVERSE VOLTAGE,%


VOLTS

FIG.5 - TYPICAL JUNCTION CAPACITANCE


1000 o
TJ = 25 C
f = 1.0 MHZ
Vsig = 50mVp-p
JUNCTION CAPACITANCE, pF

100

10
0.1 1.0 4.0 10 100

REVERSE VOLTAGE, VOLTS

Rev.05 Page 2/2

© 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/

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