SF1601G ThinkiSemiconductor
SF1601G ThinkiSemiconductor
SF1601G ThinkiSemiconductor
.269(6.85)
.226(5.75)
Low reverse leakage current
.624(15.87)
.548(13.93)
High surge current capability
Application
Automotive Environment|DC Motor Control
Plating Power Supply|UPS
Amplifier and Sound Device System
.50(12.7)MIN
.177(4.5)MAX
.038(0.96) .025(0.65)MAX
Mechanical Data
.019(0.50)
Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 300 400 600 V
NOTES : (1) Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
(3) Thermal Resistance junction to case.
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16 200
Pulse Width 8.3ms
150
10
AMPERES
125
8 100
75
6
50
4
60 Hz Resistive or 25
Inductive load
0 0
0 50 100 150 1 10 100
SF1601G-SF1604G o
SF1605G-SF1606G TJ=125 C
100
MICROAMPERES
1.0
AMPERES
SF1608G 10
o
TJ=25 C
0.1
1
o
TJ=25 C
PULSE WIDTH=300uS
1% DUTY CYCLE
0.01 0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 20 40 60 80 100
100
10
0.1 1.0 4.0 10 100
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