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    Cse212 3

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    Afraz Ul Haque Rupak
    This document discusses the pn junction, which is an important component in semiconductor devices. It describes how a pn junction is formed when a p-type semiconductor is joined to an n-type semiconductor. This creates a depletion region with layers of positive and negative charges that act as a barrier to electron movement. A pn junction can be forward or reverse biased by applying a voltage. Forward biasing reduces the barrier and allows current to flow, while reverse biasing increases the barrier and prevents current.

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    Cse212 3

    Uploaded by

    Afraz Ul Haque Rupak
    30 views10 pages
    This document discusses the pn junction, which is an important component in semiconductor devices. It describes how a pn junction is formed when a p-type semiconductor is joined to an n-type semiconductor. This creates a depletion region with layers of positive and negative charges that act as a barrier to electron movement. A pn junction can be forward or reverse biased by applying a voltage. Forward biasing reduces the barrier and allows current to flow, while reverse biasing increases the barrier and prevents current.

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    semiconductor

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    CSE212_3

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    This document discusses the pn junction, which is an important component in semiconductor devices. It describes how a pn junction is formed when a p-type semiconductor is joined to an n-type semiconductor. This creates a depletion region with layers of positive and negative charges that act as a barrier to electron movement. A pn junction can be forward or reverse biased by applying a voltage. Forward biasing reduces the barrier and allows current to flow, while reverse biasing increases the barrier and prevents current.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    30 views10 pages

    Cse212 3

    Uploaded by

    Afraz Ul Haque Rupak
    This document discusses the pn junction, which is an important component in semiconductor devices. It describes how a pn junction is formed when a p-type semiconductor is joined to an n-type semiconductor. This creates a depletion region with layers of positive and negative charges that act as a barrier to electron movement. A pn junction can be forward or reverse biased by applying a voltage. Forward biasing reduces the barrier and allows current to flow, while reverse biasing increases the barrier and prevents current.

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    THANK YOU

    CURRENT FLOW

    BIASING

    P-N JUNCTION

    Lecture - 3
    Basic Electronics
    WELCOME
    • When a p-type semiconductor is suitably joined to n-type semiconductor, the
    contact surface is called pn junction.
    • Most semiconductor devices contain one or more pn junctions.
    • The pn junction is of great importance because it is in effect, the control
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    P-N JUNCTION
    element for semiconductor devices.
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    • At the instant of p n junction formation, the free electrons near the junction in the n
    region begin to diffuse across the junction into the p region where they combine
    with holes near the junction.

    • The result is that n region loses free electrons as they diffuse into the junction. This
    creates a layer of positive charges (pentavalent ions) near the junction.
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    P-N JUNCTION
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    • As the electrons move across the junction, the p region loses holes as the electrons
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    and holes combine. The result is that there is a layer of negative charges (trivalent
    ions) near the junction.

    • These two layers of positive and negative charges form the depletion region (or
    depletion layer).
    • Once p n junction is formed and depletion layer created, the diffusion of free
    electrons stops. In other words, the depletion region acts as a barrier to the
    further movement of free electrons across the junction. The positive and negative
    charges set up an electric field.
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    • There exists a potential difference across the depletion layer and is called barrier

    P-N JUNCTION
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    potential.
    • Applying D.C. Voltage across pn Junction or Biasing a pn Junction to make current
    flow through the device.
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    P-N JUNCTION
    • There are two types of Biasing
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    1. Forward Biasing,
    2. Reverse Biasing.
    • To apply forward bias, connect positive terminal of the battery to p-type and
    negative terminal to n-type.
    • The applied forward potential establishes an electric field which acts against
    the field due to potential barrier. Therefore, the resultant field is weakened and
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    the barrier height is reduced at the junction.

    P-N JUNCTION
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    • As potential barrier voltage is very small (0.1 to 0.3 V), therefore, a small
    forward voltage is sufficient to completely eliminate the barrier. Once the
    potential barrier is eliminated by the forward voltage, junction resistance
    becomes almost zero and a low resistance path is established for the entire
    circuit. Therefore, current flows in the circuit. This is called forward current.
    • When the external d.c. voltage applied to the junction is in such a direction that
    potential barrier is increased, it is called reverse biasing.

    • It is clear that applied reverse voltage establishes an electric field which acts in
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    P-N JUNCTION
    the same direction as the field due to potential barrier.
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    The mechanism of current flow in a forward biased pn junction can be summed
    up as under :
    (i) The free electrons from the negative terminal continue to pour into the n-
    region while the free electrons in the n-region move towards the junction.
    (ii) (ii) The electrons travel through the n-region as free-electrons i.e. current in

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    P-N JUNCTION
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    n-region is by free electrons.

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    CURRENT FLOW

    P-N JUNCTION
    Thank You

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    If you have any question just drop a message

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