CHAPTER # 18: ELECTRONICS PHYSICS BY SHAHZAD

18.1 INTRODUCTION

ELECTRONICS:
The branch of physics which deals with the study of current through semi-conductors.
 Silicon is the most commonly used semi-conductor.
18.1
 Silicon is basic material used for highly integrated circuits such as chips are made.

P-N JUNCTION:
When a crystal of germanium or silicon is grown in such a
way that
 One half is doped with pentavalent impurity
 And other half is doped with trivalent impurity.
Then a P-N junction is formed.
SIDE DOPING EFFECT CARRIERS MAJORITY CARRIERS MINORITY CARRIERS
P TRIVALENT IMPURITY HOLES POSITIVE CHARGES HOLES FREE ELECTRONS
N PENTAVALENT IMPURITY FREE ELECTRONS NEGATIVE CHARGES FREE ELETRONS HOLES

DIODE:

P-N junction is also called semi-conductor diode.

 Its symbolic representation is shown in the fig.
 Arrow head represents P-region and known as anode (A).
 Vertical line represents N-region and known as cathode (C).
 Current can flow in the direction of current.
DEPLETION REGION:

Just after the formation of the junction, the free electrons in

N-region due to their random motion diffuse into P-region,
where these electrons combine with holes in the first layer of
P-region and a charge less region is formed. This charge less
region around the junction in which no charge carriers are
present is called depletion region.
 Depletion region is formed due to diffusion of charges.
 In fig dots represents electrons and circles represents holes.
 Circles with positive and negative ions represents depletion region.
POTENTIAL BARRIER:

A potential difference developed across the depletion region which

stops the further diffusion of electrons and holes. This potential
difference is called potential barrier.
Value of potential barriers for Ge is 0.3 V while for Si is 0.7 V.
18.2 BIASING OF P-N JUNCTION

BIASED P-N JUNCTION:

If a battery of some emf is connected across a P-N junction, then junction is said to be biased P-N junction.
The biasing of P-N junction is two ways:
1. Forward biased P-N junction.
2. Reverse biased P-N junction.
Forward biased P-N junction Reverse biased P-N junction
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Diagram

Definition When an external potential difference is When an external potential difference is

applied across P-N junction in such a way applied across P-N junction in such a way
that P-side is connected with positive that P-side is connected with negative
terminal of the battery and N-side is terminal of the battery and N-side is
connected with negative terminal of the connected with positive terminal of the
battery then it is called forward biased P- battery then it is called reverse biased P-N
N junction. junction.
width of Decreases increases
depletion
region
Conductivity Conducts electricity Does not conduct electricity
of current
Junction  The resistance offered by forward  The resistance offered by reverse
resistance biased P-N junction is called forward biased P-N junction is called reverse
resistance. resistance
 It is of few ohms only.  It is very high of the order of several
∆𝑉𝑓 mega ohms.
 The ratio 𝑟𝑓 = is called forward
∆𝐼𝑓
resistance.
Current  A current of few milli amperes flows  No current flows due to majority
across the P-N junction, this is called charge carriers, but a very small
forward current. current of few micro amperes flows
due to minority charge carriers across
the P-N junction is called reverse
current or leakage current.
V-I curve  The value of current for different
values of bias voltage is noted and a
graph is plotted which is called V-I
characteristic curve.
 No current flows until the biased  It can be seen that reverse voltage is
voltage becomes more than potential increased from zero, the reverse
barrier. current quickly rises to its saturation
value.

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 As the reverse voltage is further
 The graph is not a straight line which increased, the reverse current remains
means diode (P-N junction) are non- almost constant.
Ohmic devices.

18.3 RECTIFICATION

LONG QUESTION: Define rectification. Briefly explain half wave and full wave rectification.

RECTIFICATION:
The conversion of alternating current into direct current is called rectification. The circuit used for
rectification is called rectifier.
 Didoes are used for rectification.
 There are two types of rectification
1. Half wave rectification.
2. Full wave rectification.
HALF WAVE RECTIFICATION:

The rectification in which one half of alternating current is converted into direct current is called half wave
rectification.
CIRCUIT DIAGRAM:

It consists of
 One diode
 A resistor
 Alternating voltage.
WAVE FORM:

 After conversion current flows only in one direction so it is direct

current.
 Conversion is done for positive half and no conversion for negative
half.
 Direct current has pulses so the final output is called pulsating D.C.
 The pulses are removed by filter circuit which is made from the
suitable combination of capacitors and inductors.

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DURING POSITIVE HALF CYCLE: DURING NEGATIVE HALF CYCLE:
𝑇 𝑇
 During positive half cycle (0 → 2 ) of input  During negative half cycle ( 2 → 𝑇) of input
signal, the diode is forward biased. signal, the diode is reverse biased.
 Offers low resistance, current flows.  Offers high resistance, current flow almost
zero.
FULL WAVE RECTIFICATION:

The rectification in which both halves of alternating current is converted into direct current is called full
wave rectification.
CIRCUIT DIAGRAM:

It consists of
 Four diodes in the form a bridge. So it is also called bridge wave rectifier circuit.
 A resistor
 Alternating voltage.

WAVE FORM:
 After conversion current flows only in one direction so it is direct
current.
 Conversion is done for positive half and also conversion for negative
half.
 Direct current has pulses so the final output is called pulsating D.C.
 The pulses are removed by filter circuit which is made from the
suitable combination of capacitors and inductors.
DURING POSITIVE HALF CYCLE: DURING NEGATIVE HALF CYCLE:

𝑇 𝑇
 During positive half cycle (0 → 2 ) of input  During negative half cycle ( 2 → 𝑇) of input
signal, the diodes 𝐷1 and 𝐷3 are forward biased signal, the diodes 𝐷2 and 𝐷4 are forward biased
and conduct. and conduct.
 Terminal A is positive and B is negative.  Terminal B is positive and A is negative.

18.4 SPECIALLY DESIGNED P-N JUNCTIONS

LONG QUESTION: Describe light emitting diode and photo diode in detail.
Or For your information:
What is photo voltaic cell. Explain its working and uses. LED’s are made from special semiconductors
Or such as gallium arsenide phosphide, gallium
Explain any two specially designed P-N junctions in detail. arsenide and gallium phosphide.

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SPECIALLY DESIGNED P-N JUNCTIONS:

In addition to rectification the P-N junctions may be developed for some special purposes. The most
commonly used P-N junctions are:
1. Light emitting diode (LED).
2. Photo diode.
3. Photo voltaic cell.
LIGHT EMITTING DIODE (LED) PHOTO DIODE
DEFINITION It is a P-N junction which emits visible It is a P-N junction which converts light energy
light when energized. into electrical energy.
SYMBOL

BIASING LED always operates in forward biasing. Photo diode is always operated in reverse
biasing.
DETECTOR LED is a current detector. Photo diode is light detector.
WORKING

 These are made from special  When no light is incident on the junction,
designed semi-conductors gallium the reverse current is almost negligible.
arsenide and gallium arsenide  When junction is exposed to light, the
phosphide. reverse current increases with intensity of
 Potential barrier between P and N light.
sides is such that when an electron  A photo diode can turn its current ON and
combines with a hole during forward OFF in nano-seconds.
bias condition, a photon of visible  It is one of the most fastest photo
light is emitted. detection devices.
 Colour of LED depends upon the
nature of semi-conductor.
USES  Used as indicators.  Detects both visible and invisble lights.
 Specially formed array of seven LED’s  Automatic switching.
is used for displaying digits in  Logic circuits.
electronic appliances.  Optical communication equipment.
 Used in calculators and digtial  Security systems.
watches.  T.V remote.
 Used as burgular alarm system.  Used as burgular alarm system.
PHOTO-VOLTAIC CELL (Solar cell):

DEFINITION:

It is a transistor which converts light energy into electrical energy.

It is reverse process of LED.
SYMBOL:

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CHAPTER # 18: ELECTRONICS PHYSICS BY SHAHZAD
BIASING: No biasing is required for photo-voltaic cell to operate.

DETECTOR:
It is used to detect light.

WORKING:

 It consists of a thick N-type region covered by a thin P-type layer.

 When no external bias is given to P-N junction and is exposed to
light, absorbed photons generate electron-hole pairs.
 It results into an increase percentage of majority charge carriers in
both the P and N-regions.
 When these majority charge carriers diffuse close to the junction
the electric field is produced due to potential barrier.
 It causes the current to flow through external circuit.
 The current is proportional to intensity of light.
 Current is taken along y-axis and intensity of light along x-axis.
USES:

 Used in satellites to convert solar energy into electrical energy.

 Used for driving bikes and cars.
18.5 TRANSISTOR

TRANSISTOR: For your information:

Transistor stands for transfer of resistance.
A transistor is combination of P-N junction, having
 Emitter base junction.
 Collector base junction.
It also consists of a single crystal of germanium or silicon which is grown in such a way that it has three
regions i.e. base, emitter and collector.
Base Emitter Collector
 A central region is known as  It has greater concentration  It has less concentration of
base. of impurity. impurity.
 It is very thin of the order of  It is smaller than collector.  It is larger than emitter.
10−6 𝑚
TYPES OF TRANSISTOR:
For your information:
There are two types of transistor. In n-p-n transistor mobility of electrons is 2 to 3 times
1. n-p-n transistor. than p-n-p transistor so it is most commonly used.
2. P-n-p transistor.
n-p-n transistor: p-n-p transistor:
 In n-p-n transistor  In p-n-p transistor
o Central region is p-type which is o Central region is n-type which is
sandwiched between two n-type sandwiched between two p-type
regions. regions.

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BIASING:

For normal operation:

o Emitter-base junction is forward biased with battery 𝑉𝐵𝐵 .
o Collector-base junction is reversed biased with battery 𝑉𝐶𝐶 .
o Battery 𝑉𝐶𝐶 must be stronger than 𝑉𝐵𝐵 .

LONG QUESTION: What is transistor? Briefly explain current flow in n-p-n transistor.

CURRENT FLOW IN n-p-n TRANSISTOR:

 n-p-n transistor is connected in circuit with emitter-base junction is forward biased and collector-base
junction is reverse biased.
 The forward bias causes the electrons in the n-type emitter to flow towards base.
 This is emitter current 𝐼𝐸 .
 As the electrons flow through the p-type base, they can be attracted towards positive terminals of
either 𝑉𝐵𝐵 or 𝑉𝐶𝐶 .
 The electrons combines with holes for base current 𝐼𝐵 .
 The remaining more than 95% constitute collector current 𝐼𝐶 .
 In this way entire emitter current flows in collector circuit.
 It is clear that emitter current is the sum of collector current and base current.
𝐼𝐸 = 𝐼𝐵 + 𝐼𝐶
CONVENTIONAL AND ELECTRONIC CURRENT:

CONVENTIONAL CURRENT: ELECTRONIC CURRENT:

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CURRENT GAIN:
𝐼𝐶
𝛽 = 𝐼𝐵

 For a transistor, the ratio of collector current 𝐼𝐶 to base current 𝐼𝐵 is called current gain of
transistor.
 It is denoted by 𝛽.
 It has no unit.
 The current gain is of the order of hundreds.
18.6 TRANSISTOR AS AN AMPLIFIER

LONG QUESTION: How can we use transistor as an amplifier?

TRANSISTOR AS AN AMPLIFIER:

 A device which can amplify (increase) the input signals is called amplifier.
 In most electronics, transistors are used as amplifier.
 These are building blocks for every complex circuit.
GAIN OF AMPLIFIER:
RC
A = −β
rie

VOLTAGES:
 Battery VBB forward biases the base-emitter junction.
 Battery VCC reverse biases the collector-base junction.
 VBE = Vin = input voltage at base-emitter junction.
 VCE = V0 = output voltage at collector-base junction.

DERIVATION:
Base current:
Apply,
V = IR
VBE = IB rie
VBE DIFFERENT TYPES OF TRANSISTORS:
IB = ---- (1)
rie
Where rie = base emitter resistance of transistor.
Collector current:
IC
β = IB
IC = βIB
By putting value of IB ,
VBE
IC = β ---- (2)
rie
Output voltage:
For output voltage apply Kirchhoff’s voltage law (KVL)
VCC = IC R C + VCE
VCE = VCC − IC R C
VCE = V0
V0 = VCC − IC R C ---- (3)
By putting value of IC ,

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VBE
V0 = VCC − β RC ---- (4)
rie
When a small input voltage ∆Vin is applied at input terminal following changes occur:
1. VBE becomes VBE + ∆Vin
2. IB becomes IB + ∆IB
3. IC becomes IC + ∆IC
4. V0 becomes V0 + ∆V0
Equation (4) becomes:
VBE +∆Vin
V0 + ∆V0 = VCC − β R C ---- (5)
rie
Equation (5) – (4)
VBE +∆Vin VBE
V0 + ∆V0 − V0 = VCC − β R C − (VCC − β RC)
rie rie
VBE ∆Vin VBE
∆V0 = VCC − β RC − β R C − VCC + β RC
rie rie rie
∆Vin
∆V0 = −β RC
rie
∆V0 RC
= −β r
∆Vin ie
RC
A = −β r
ie
CONCLUSION:
 Negative sign shows that input and output signal are out of phase i.e. phase shift of 1800 .
R
 The value of β r C is of the order of hundreds. So, input voltage is amplified.
ie

18.7 TRANSISTOR AS A SWITCH

LONG QUESTION: Define transistor. How a transistor can be used as a switch?

TRANSISTOR AS A SWITCH:
 The collector C and emitter E are used as terminals of the switch.
 The circuit in which the current is to be turned ON or OFF is connected across the terminals C and E.
 Base B and emitter E are used as control terminals which turn ON and OFF the switch.
OPERATION:

TURNING THE SWITCH ON: TURNING THE SWITCH OFF:

 To turn ON the base current 𝐼𝐵 is set at  To turn OFF the base current 𝐼𝐵 is set at zero by
maximum due to which large current 𝐼𝐶 flows opening the base circuits due to which no
between C and E. current 𝐼𝐶 flows between C and E.
IC
β = I B
IC = βIB
IC = β(0)
IC = 0

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 The large current through 𝐼𝐶 is possible when  Zero current through 𝐼𝐶 is possible when
resistance of C and E is small and potential resistance of C and E is infinite.
across C and E is 0.1 volt.
 Emitter is at ground and we consider that  Emitter is at ground and we consider that
collector is also at ground and circuit can be collector is also at ground and circuit can be
reduced as shown in fig b. reduced as shown in fig d.
 C-E is closed and bulb glows due to large flow  C-E is opened and bulb does not glow due to no
of 𝐼𝐶 . flow of 𝐼𝐶 .
SHORT QUESTIONS:

18.1: How does the motion of an electron in a n-type substance differ from the motion of holes in a
p-type substance?

Answer:
It differs in two ways,
 When a battery is connected to a n-type, electrons (majority carriers) move towards the positive
end while in p-type holes moves towards the negative end of the battery.
 Mobility of electrons in n-type is greater than mobility of holes in p-type.
18.2: What is net charge on a n-type or a p-type substance?

Answer:
The net charge on a n-type or a p-type substance is zero.
Explanation:
 n-type substance is formed when a small amount of pentavalent impurity is added to pure semi-
conductor and p-type is formed when a small amount of trivalent impurity is added to pure semi-
conductor.
 All the atoms in a n-type or p-type substance are electrically neutral.
 Impurity added increases conductivity but net charge remains zero.
18.3: The anode of a diode is 0.2 V positive w.r.t its cathode. Is it forward biased?

Answer:
Yes, it is forward biased.
Explanation:
 We know that when anode (p-side) is positive with respect to its cathode (n-side) it is forward
biased.
18.4: Why charge carriers are not present in depletion region?

Answer:
 Just after the formation of the junction, the free electrons in N-region due to their random motion
diffuse into P-region, where these electrons combine with holes in the first layer of P-region and a
charge less region is formed.
 This charge less region around the junction in which no charge carriers are present is called
depletion region.
 Electric field is present due to potential barrier due to which no charge carriers are present in
depletion region.
18.5: What is effect of forward and reverse biasing of a diode on the width of depletion region?

Answer:

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 Forward biasing:
When p-n junction is forward biased, the width of depletion region is reduced, potential barrier is
reduced and it allows more current to flow across junction.
 Reverse biasing:
When p-n junction is reverse biased, the width of depletion region increases, potential barrier is
increased and it allows less current to flow across junction.
18.6: Why ordinary silicon does not emit light?

Answer:
It does not emit light because,
 It is opaque to light.
 In ordinary silicon diodes, when electron from n-side cross the junction and combine with the holes
on p-side, energy is released in the form of heat only.
 So, it does not emit light.
18.7: Why a photo diode is operated in reverse biased state?

Answer:
 Photo diode is used for detection of light.
 In reverse biased condition, photo diode has a very small reverse current. This current is due to
minority carriers.
 The number of minority charge carries depends upon intensity of light.
 When it is exposed to light reverse current increases and light is detected easily.
18.8: Why is the base current in a transistor is very small?

Answer:
The base current in a transistor is very small because,
 Base is very thin of the order of 10−6 𝑚.
 It has very small doping as compared to emitter and collector.
 𝑉𝐶𝐶 > 𝑉𝐵𝐵 , collector-base voltage is larger than emitter-base voltage.
 Due to which base current in a transistor is very small.
18.9: What is the biasing requirements of the junction for its normal operation? Explain how these
requirements are met in common emitter amplifier?
Answer:
For normal operation:
 Emitter-base junction is forward biased.
 Collector-base junction is reversed biased
For common emitter operation:
 Input signal is applied between emitter base junction and output signal is taken across collector
base junction.
 Similarly, emitter base junction is forward biased and collector base junction is reversed biased.
EXTRA SHORT QUESTIONS:

1. How a p-n junction is formed?

Answer:
P-N JUNCTION:
When a crystal of germanium or silicon is grown in such a
way that

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 One half is doped with pentavalent impurity
 And other half is doped with trivalent impurity.
Then a P-N junction is formed.
2. What is diode? Draw its symbol.
Answer:
P-N junction is also called semi-conductor diode.
 Its symbolic representation is shown in the fig.
 Arrow head represents P-region and known as anode (A).
 Vertical line represents N-region and known as cathode (C).
 Current can flow in the direction of current.

3. Define depletion region and potential barrier.

Answer:
DEPLETION REGION:
Just after the formation of the junction, the free electrons in N-region due to their random motion diffuse
into P-region, where these electrons combine with holes in the first layer of P-region and a charge less
region is formed. This charge less region around the junction in which no charge carriers are present is
called depletion region.
POTENTIAL BARRIER:
A potential difference developed across the depletion region which stops the further diffusion of electrons
and holes. This potential difference is called potential barrier.
Value of potential barriers for Ge is 0.3 V while for Si is 0.7 V.
4. Define potential barrier. Write its values for Ge and Si.
Answer:
POTENTIAL BARRIER:
A potential difference developed across the depletion region which stops the further diffusion of electrons
and holes. This potential difference is called potential barrier.
Value of potential barriers for Ge is 0.3 V while for Si is 0.7 V.

5. Differentiate between forward biasing and reverse biasing of a p-n junction.

Answer:
Forward biased P-N junction Reverse biased P-N junction
Diagram

Definition When an external potential difference is When an external potential difference is

applied across P-N junction in such a way applied across P-N junction in such a way
that P-side is connected with positive that P-side is connected with negative
terminal of the battery and N-side is terminal of the battery and N-side is
connected with negative terminal of the connected with positive terminal of the
battery then it is called forward biased P- battery then it is called reverse biased P-N
N junction. junction.

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width of Decreases increases
depletion
region
Conductivity Conducts electricity Does not conduct electricity
of current

6. What is reverse current or leakage current?

Answer:
REVERSE OR LEAKAGE CURRENT:
No current flows due to majority charge carriers, but a very small current of few micro amperes flows due
to minority charge carriers across the P-N junction is called reverse current or leakage current.

7. Define rectification. Draw circuit diagram for half-wave rectification.

Answer:
RECTIFICATION:
The conversion of alternating current into direct current is called rectification. The circuit used for
rectification is called rectifier.
CIRCUIT DIAGRAM FOR HALF-WAVE RECTIFICATION:

8. What is half wave and full wave rectification? Draw output wave form for these.
Answer:
HALF WAVE RECTIFICATION: FULL WAVE RECTIFICATION:
DEFINITION: DEFINITION:
The rectification in which both halves of The rectification in which both halves of
alternating current is converted into direct current alternating current is converted into direct current
is called full wave rectification. is called full wave rectification.
OUTPUT WAVEFORM: OUTPUT WAVEFORM:

9. Draw circuit diagram for full wave rectification.

Answer:
DURING POSITIVE HALF CYCLE: DURING NEGATIVE HALF CYCLE:

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10. What is filter circuit in rectification?

Answer:
FILTER CIRCUIT:
 Direct current has pulses so the final output is called pulsating D.C.
 The pulses are removed by filter circuit which is made from the suitable combination of capacitors and
inductors.

11. What is LED? Write down its uses.

Answer:
LIGHT EMITTING DIODE (LED)
DEFINITION It is a P-N junction which emits visible light when energized.
SYMBOL

BIASING LED always operates in forward biasing.

DETECTOR LED is a current detector.
USES  Used as indicators.
 Specially formed array of seven LED’s is used for displaying digits in electronic
appliances.
 Used in calculators and digtial watches.
 Used as burgular alarm system.

12. What is photo diode? Write down its uses.

Answer:
PHOTO DIODE
DEFINITION It is a P-N junction which converts light energy into electrical energy.
SYMBOL

BIASING Photo diode is always operated in reverse biasing.

DETECTOR Photo diode is light detector.
USES  Detects both visible and invisble lights.
 Automatic switching.
 Logic circuits.
 Optical communication equipment.
 Security systems.
 T.V remote.
 Used as burgular alarm system.

13. What is photo voltaic cell (solar cell)? Write down its uses.
Answer:
PHOTO VOLTAIC CELL:
DEFINITION It is a transistor which converts light energy into electrical energy.
It is reverse process of LED.
SYMBOL

BIASING No biasing is required for photo-voltaic cell to operate.

DETECTOR It is used to detect light.
USES  Used in satellites to convert solar energy into electrical energy.

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 Used for driving bikes and cars.

14. What is transistor? Differentiate between n-p-n and p-n-p transistors. OR Draw circuit symbols
for n-p-n and p-n-p transistors.
Answer:
TRANSISTOR:
A transistor is combination of P-N junction, having
 Emitter base junction.
 Collector base junction.
n-p-n transistor: p-n-p transistor:
 In n-p-n transistor  In p-n-p transistor
o Central region is p-type which is o Central region is n-type which is
sandwiched between two n-type sandwiched between two p-type
regions. regions.

15. Define current gain of transistor. Give its mathematical form OR Define 𝛽 for transistor. Give its
mathematical form.
Answer:
𝐼
CURRENT GAIN: 𝛽 = 𝐼𝐶
𝐵
 For a transistor, the ratio of collector current 𝐼𝐶 to base current 𝐼𝐵 is called current gain of
transistor.
 It is denoted by 𝛽.
 It has no unit.
 The current gain is of the order of hundreds.
MCQ’S

Intro to p-n junction diode:

1. In n-type materials, the minority carriers are
a) Free electrons b) holes c) protons d) mesons
2. The reverse current through semi-conductor is due to
a) Holes b) electrons c) majority carriers d) minority carriers
3. The potential barrier for Ge at room temperature is
a) 0.3 V b) 3 volt c) 0.7 V d) 7V
4. Potential barrier across depletion region in case of silicon diode at room temperature is
a) 0.3 V b) 3 volt c) 0.7 V d) 7V
5. The ratio of potential barrier of Ge and Si at room temperature is
a) 7:3 b) 1:3 c) 2:5 d) 3:7
6. A potential barrier of 0.7 V exists across p-n junction for
a) Silicon b) germanium c) indium d) gallium
7. The number of terminals in a semi-conductor diode are
a) 2 b) 3 c) 4 d) 5
8. Depletion region carries
a) –ve charge b) +ve charge c) ions d) no charge
9. The diode characteristic curve is the graph between

PROF. SHAHZAD ASLAM 15

CHAPTER # 18: ELECTRONICS PHYSICS BY SHAHZAD
a) Time and current b) voltage and current
c) Forward voltage and reverse voltage d) forward current and reverse voltage
10. When a p-n junction is reverse biased, the depletion region is
a) Widened b) narrowed c) normal d) no change
11. When a p-n junction is forward biased, the depletion region is
a) Widened b) narrowed c) normal d) no change
12. Which one does not affect the conductivity of p-n junction diode
a) Doping b) pressure c) voltage d) both a and b
13. The potential barrier in a diode stops movement of
a) Holes only b) electrons only c) both electrons and holes d) none
14. In p-type charge carriers are
a) Holes b) electrons c) both holes and electrons d) no one
15. In n-type charge carriers are
a) Holes b) electrons c) both holes and electrons d) no one
16. The reverse current through p-n junction is
a) Infinite b) zero
c) less than forward current d) greater than forward current
17. Forward resistance is
a) Zero b) few ohms c) several mega ohms d) infinite
18. During negative half cycle of A.C, p-n junction offers
a) High resistance b) low resistance c) no resistance d) all of these
19. In forward biasing, the value of resistance is
a) Large b) very large c) small d) very small
20. Reverse resistance is
a) Zero b) few ohms c) several mega ohms d) infinite
21. In forward biasing flow of current is
a) Few milli amperesb) zero c) few micro amperes d) mega amperes
22. In reverse biasing flow of current is
a) Few milli amperes b) zero c) few micro amperes d) mega amperes
23. Junction resistance at break down is
a) Zero b) infinite c) mega ohms d) mill ohms
Rectification:
24. P-n junction can be used as
a) Amplifier b) oscillator c) modulator d) rectifier
25. Conversion of A.C into D.C is called
a) Modulation b) amplification c) oscillation d) rectification
26. The diode cannot be used as
a) Amplifier b) detector c) rectifier d) modulator
27. The device used for rectification is
a) Rectifier b) transformer c) thermistor d) Wheatstone
28. A.C can be converted into D.C by
a) Transformer b) rectifier c) motor d) capacitor
29. For rectification we use
a) Transformer b) diode c) choke d) generator
30. The number of diodes in bridge rectifier
a) 4 b) 3 c) 2 d) 1
31. The number of diodes in half wave rectification
a) 4 b) 3 c) 2 d) 1
32. The number of diodes in full wave rectification
a) 4 b) 3 c) 2 d) 1
33. The output voltage of a rectifier is
a) Smooth b) pulsating c) perfectly direct d) alternate

PROF. SHAHZAD ASLAM 16

CHAPTER # 18: ELECTRONICS PHYSICS BY SHAHZAD
34. In a bridge rectifier, when 𝑉𝑖 is positive at point B with respect to point A, which diodes are ON
a) 𝑫𝟐 𝒂𝒏𝒅 𝑫𝟒 b) 𝐷1 𝑎𝑛𝑑 𝐷3 c) 𝐷2 𝑎𝑛𝑑 𝐷3 d) 𝐷1 𝑎𝑛𝑑 𝐷4
35. In a bridge rectifier, when 𝑉𝑖 is positive at point A with respect to point B, which diodes are ON
a) 𝐷2 𝑎𝑛𝑑 𝐷4 b) 𝑫𝟏 𝒂𝒏𝒅 𝑫𝟑 c) 𝐷2 𝑎𝑛𝑑 𝐷3 d) 𝐷1 𝑎𝑛𝑑 𝐷4
36. Pulsating output of full wave rectification can be made smooth by using circuit
a) Filter b) amplifier c) resistor d) transistor
37. During negative half cycle, which diodes conduct
a) No diode b) all diodes c) 𝐷1 , 𝐷3 d) 𝑫𝟐 , 𝑫𝟒
38. During positive half cycle, which diodes conduct
a) No diode b) all diodes c) 𝑫𝟏 , 𝑫𝟑 d) 𝐷2 , 𝐷4
39. In half wave rectification the diode conducts during
a) Both halves of input cycle b) a portion of positive half of the input cycle
c) A portion of the negative of input cycle d) one half of the input cycle

Specially designed p-n junctions:

40. A p-n junction cannot be used as
a) Rectifier b) amplifier c) detector d) LED
41. LED are made from semiconductors
a) Silicon b) germanium c) gallium arsenide d) carbon
42. LED emits light only when
a) Forward biased b) reverse biasedc) unbiased d) none
43. Photo diode is operated in
a) Forward biased b) reverse biasedc) unbiased d) none
44. Photovoltaic cell or solar cell is operated in
a) Forward biased b) reverse biased c) unbiased d) none
45. The no of LED’s needed to display all the digits is
a) Four b) six c) five d) seven
46. The colour of light emitted by a LED depends on
a) Its forward bias b) its reverse bias
b) Amount of forward current d) the type of semi-conductor material used
47. Photo diode is used for detection of
a) Light b) heat c) current d) magnet
48. Which diode work at reverse biasing
a) LED b) photo voltaic c) photo diode d) silicon diode
49. Which diode work at forward biasing
a) LED b) photo voltaic c) photo diode d) silicon diode
50. A photo diode can turn its current on and off in
a) Micro sec b) milli sec c) nano sec d) mega sec
51. Photodiode detects light
a) Visible b) radio waves c) x-rays d) all
52. In photovoltaic cell, current is
a) Wavelength of light c) intensity of light
b) Frequency of light d) energy
53. A sensor of light is
a) Transistor b) LED c) photo diode d) none
Transistor, transistor as amplifier
54. Computer is basically a vast arrangement of electronic switches made from
a) Diode b) solar cells c) photo diodes d) transistors
55. Transistors can be made from
a) Plastics b) metals c) insulators d) doped semi-conductors
56. The central region of a transistor is called
a) Base b) emitter c) collector d) neutral

PROF. SHAHZAD ASLAM 17

CHAPTER # 18: ELECTRONICS PHYSICS BY SHAHZAD
57. Size of base of transistor is
a) 10−9 𝑚 b) 10−7 𝑚 c) 10−8 𝑚 d) 𝟏𝟎−𝟔 𝒎
58. Size of base of transistor is
a) 1 nm b) 1 mm c) 𝟏 𝝁𝒎 d) 1 pm
59. n-p-n transistor has mobility of electrons than that of p-n-p transistor:
a) 3 to 4 b) 2 to 3 c) 5 to 6 d) 6 to 7
60. Transistor has
a) 2 regions b) 3 regions c) 4 regions d) 1 region only
61. Which one has greater concentration of impurity
a) Base b) emitter c) collector d) all have equal amount
62. Which one is lightest one in transistor
a) Base b) emitter c) collector d) all are light
63. Which one is thickest/heaviest region of transistor
a) Base b) emitter c) collector d) all are thick
64. When emitter-base junction of transistor is reverse biased, collector current
a) Reverse b) increase c) decrease d) stops
65. For a normal biased p-n junction transistor, the emitter current 𝐼𝐸 is given by
a) 𝐼𝐸 = 0 b) 𝐼𝐸 = 𝐼𝐵 c) 𝑰𝑬 = 𝑰𝑩 + 𝑰𝑪 d) 𝐼𝐸 = 𝐼𝐵 − 𝐼𝐶
66. For normal operation of transistor, emitter base junction is
a) Forward biased b) reverse biased c) neutral d) both a and b
67. For normal operation of transistor, collector base junction is
a) Forward biased b) reverse biased c) neutral d) both a and b
68. Current gain of transistor is given by
𝐼 𝑰
a) 𝛽 = 𝐼𝐵 + 𝐼𝐶 b) 𝛽 = 𝐼𝐵 − 𝐼𝐶 c) 𝛽 = 𝐼𝐵 d) 𝜷 = 𝑰𝑪
𝐶 𝑩
69. S.I unit for current gain of transistor is
a) Ampere b) per ampere c) ohm-meter d) no unit
70. Current gain is of the order of
a) Tens b) hundreds c) thousands d) millions
71. Given that 𝐼𝐶 = 100 𝑚𝐴 and 𝐼𝐵 = 40 𝜇𝐴, then current gain of transistor is
a) 0.0004 b) 250 c) 0.004 d) 250 A
72. Voltage gain of the common emitter n-p-n transistor as an amplifier is
𝐑 r RC
a) 𝛃 𝐫 𝐂 b) β Rie c) βrie
d) βrie R C
𝐢𝐞 C
73. The output voltage for transistor as an amplifier has phase shift of
a) 00 b) 900 c) 𝟏𝟖𝟎𝟎 d) 2700
74. The output voltage for transistor as an amplifier is
a) In phase b) out of phase c) line d) circle
𝑰𝑪
75. Ratio 𝜷 = 𝑰 is called
𝑩
a) Current gain b) voltage gain c) nuclear gain d) emitter gain
76. A transistor has 𝛽 = 100 and 𝐼𝐶 = 100 𝑚𝐴, its value of 𝐼𝐵 is
a) 1 𝜇𝐴 b) 0.001 𝜇𝐴 c) 0.1 𝜇𝐴 d) 𝟏𝟎𝟎 𝝁𝑨
77. The device which keeps to work on the input with amplification is called
a) Amplifier b) inverter c) diode d) inductor
78. A circuit which converts low voltage to high voltage is called
a) Amplifier b) rectifier c) transistor d) inductor
79. The gain of transistor amplifier depends upon
a) Collector resistance b) base resistance
c) Input resistance d) output resistance
80. Device which is used as amplifier and works with the negative feedback is
a) Op amplifier b) n-p-n transistor c) p-n-p transistor d) transistor
81. Gain of amplifier is given as
R 𝐑𝐂 𝑅2 𝑅2
a) β r C b) −𝛃
𝐫𝐢𝐞
c) 1+
𝑅1
d) −
𝑅1
ie

PROF. SHAHZAD ASLAM 18