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    Irf5305 Mosfet Canal P

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    YEISON ANDRES VEGA MUÑOZ
    This document summarizes the specifications and features of the IRF5305 P-Channel MOSFET transistor from ISC. Key specifications include a maximum on-resistance of 0.06 ohms, avalanche tested rating up to -55V, and continuous drain current rating up to -31A. The device is intended for use in applications requiring an efficient and reliable switching device.

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    © All Rights Reserved
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    Irf5305 Mosfet Canal P

    Uploaded by

    YEISON ANDRES VEGA MUÑOZ
    57 views2 pages
    This document summarizes the specifications and features of the IRF5305 P-Channel MOSFET transistor from ISC. Key specifications include a maximum on-resistance of 0.06 ohms, avalanche tested rating up to -55V, and continuous drain current rating up to -31A. The device is intended for use in applications requiring an efficient and reliable switching device.

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    datasheet de mostfet irf5305 canal p

    Original Title

    IRF5305 MOSFET CANAL P

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    This document summarizes the specifications and features of the IRF5305 P-Channel MOSFET transistor from ISC. Key specifications include a maximum on-resistance of 0.06 ohms, avalanche tested rating up to -55V, and continuous drain current rating up to -31A. The device is intended for use in applications requiring an efficient and reliable switching device.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    57 views2 pages

    Irf5305 Mosfet Canal P

    Uploaded by

    YEISON ANDRES VEGA MUÑOZ
    This document summarizes the specifications and features of the IRF5305 P-Channel MOSFET transistor from ISC. Key specifications include a maximum on-resistance of 0.06 ohms, avalanche tested rating up to -55V, and continuous drain current rating up to -31A. The device is intended for use in applications requiring an efficient and reliable switching device.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 2

    isc P-Channel MOSFET Transistor IRF5305,IIRF5305

    ·FEATURES
    ·Static drain-source on-resistance:
    RDS(on)≤0.06Ω
    ·Enhancement mode:
    ·100% avalanche tested
    ·Minimum Lot-to-Lot variations for robust device
    performance and reliable operation

    ·DESCRIPTION
    ·Combine with the fast switching speed and ruggedized device
    design,provide the designer with an extremely efficient and
    reliable device for use in a wide variety of applications.

    ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

    SYMBOL PARAMETER VALUE UNIT

    VDSS Drain-Source Voltage -55 V

    VGS Gate-Source Voltage ±20 V

    ID Drain Current-Continuous -31 A

    IDM Drain Current-Single Pulsed -110 A

    PD Total Dissipation @TC=25℃ 110 W

    Tj Max. Operating Junction Temperature 175 ℃

    Tstg Storage Temperature -55~175 ℃

    ·THERMAL CHARACTERISTICS

    SYMBOL PARAMETER MAX UNIT

    Rth(j-c) Channel-to-case thermal resistance 1.4 ℃/W

    Rth(j-a) Channel-to-ambient thermal resistance 62 ℃/W

    isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark


    isc P-Channel MOSFET Transistor IRF5305,IIRF5305

    ELECTRICAL CHARACTERISTICS
    TC=25℃ unless otherwise specified

    SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT

    BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= -250μA -55 V

    VGS(th) Gate Threshold Voltage VDS=VGS; ID= -250μA -2.0 -4.0 V

    RDS(on) Drain-Source On-Resistance VGS= -10V; ID= -16A 0.06 Ω

    IGSS Gate-Source Leakage Current VGS= ±20V ±100 nA

    IDSS Drain-Source Leakage Current VDS= -55V; VGS= 0V -25 μA

    VSD Diode forward voltage Is= -16A; VGS = 0V -1.3 V

    NOTICE：
    ISC reserves the rights to make changes of the content herein the datasheet at any time without
    notification. The information contained herein is presented only as a guide for the applications of
    our products.
    ISC products are intended for usage in general electronic equipment. The products are not
    designed for use in equipment which require specialized quality and/or reliability, or in equipment
    which could have applications in hazardous environments, aerospace industry, or medical
    field. Please contact us if you intend our products to be used in these special applications.
    ISC makes no warranty or guarantee regarding the suitability of its products for any particular
    purpose, nor does ISC assume any liability arising from the application or use of any products, and
    specifically disclaims any and all liability, including without limitation special, consequential or
    incidental damages.

    isc website：www.iscsemi.cn 2 isc & iscsemi is registered trademark

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