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    Isc 3DD209L: Silicon NPN Power Transistor

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    elpatopato1
    This document provides information on the isc Silicon NPN Power Transistor 3DD209L. It has a high breakdown voltage, high switching speed, and high current capability. It is suitable for applications such as energy-saving lights, electronic ballasts, and high frequency switching power supplies. The transistor has absolute maximum ratings including a collector-base voltage of 700V and collector-emitter voltage of 400V. It provides electrical characteristics such as a collector-emitter saturation voltage of 1.2V at 5A collector current.

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    Isc 3DD209L: Silicon NPN Power Transistor

    Uploaded by

    elpatopato1
    23 views2 pages
    This document provides information on the isc Silicon NPN Power Transistor 3DD209L. It has a high breakdown voltage, high switching speed, and high current capability. It is suitable for applications such as energy-saving lights, electronic ballasts, and high frequency switching power supplies. The transistor has absolute maximum ratings including a collector-base voltage of 700V and collector-emitter voltage of 400V. It provides electrical characteristics such as a collector-emitter saturation voltage of 1.2V at 5A collector current.

    Original Description:

    esquema 3DD209L

    Original Title

    3dd209l

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    This document provides information on the isc Silicon NPN Power Transistor 3DD209L. It has a high breakdown voltage, high switching speed, and high current capability. It is suitable for applications such as energy-saving lights, electronic ballasts, and high frequency switching power supplies. The transistor has absolute maximum ratings including a collector-base voltage of 700V and collector-emitter voltage of 400V. It provides electrical characteristics such as a collector-emitter saturation voltage of 1.2V at 5A collector current.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    23 views2 pages

    Isc 3DD209L: Silicon NPN Power Transistor

    Uploaded by

    elpatopato1
    This document provides information on the isc Silicon NPN Power Transistor 3DD209L. It has a high breakdown voltage, high switching speed, and high current capability. It is suitable for applications such as energy-saving lights, electronic ballasts, and high frequency switching power supplies. The transistor has absolute maximum ratings including a collector-base voltage of 700V and collector-emitter voltage of 400V. It provides electrical characteristics such as a collector-emitter saturation voltage of 1.2V at 5A collector current.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 2

    isc Silicon NPN Power Transistor 3DD209L

    DESCRIPTION
    ·High breakdown voltage
    ·High switching speed
    ·High current capability
    ·Minimum Lot-to-Lot variations for robust device
    performance and reliable operation

    APPLICATIONS
    ·Energy-saving light
    ·Electronic ballasts
    ·High frequency switching power supply
    ·High frequency power transform

    ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

    SYMBOL PARAMETER VALUE UNIT

    VCBO Collector-Base Voltage 700 V

    VCEO Collector-Emitter Voltage 400 V

    VEBO Emitter-Base Voltage 9 V

    IC Collector Current-Continuous 12 A

    PC Collector Power Dissipation@TC=25℃ 120 W

    TJ Junction Temperature 150 ℃

    Tstg Storage Temperature -55~150 ℃

    isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark


    isc Silicon NPN Power Transistors 3DD209L

    ELECTRICAL CHARACTERISTICS
    TC=25℃ unless otherwise specified

    SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT

    V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 400 V

    V(BR)CBO Collector-Base Breakdown Voltage IC=1mA; IE= 0 700 V

    V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 9 V

    VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 1A 1.2 V

    VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 8A; IB= 1.6A 1.8 V

    VBE(sat) Base-Emitter Saturation Voltage IC= 8A ;IB= 1.6A 1.8 V

    ICEO Collector Cutoff Current VCE= 400V; IB= 0 50 uA

    IEBO Emitter Cutoff Current VEB= 9V; IC= 0 10 uA

    hFE-1 DC Current Gain IC= 5A; VCE= 10V 8 40

    hFE-2 DC Current Gain IC= 8A; VCE= 5V 5

    NOTICE：
    ISC reserves the rights to make changes of the content herein the datasheet at any time without
    notification. The information contained herein is presented only as a guide for the applications of
    our products.
    ISC products are intended for usage in general electronic equipment. The products are not designed
    for use in equipment which require specialized quality and/or reliability, or in equipment which
    could have applications in hazardous environments, aerospace industry, or medical field. Please
    contact us if you intend our products to be used in these special applications.
    ISC makes no warranty or guarantee regarding the suitability of its products for any particular
    purpose, nor does ISC assume any liability arising from the application or use of any products, and
    specifically disclaims any and all liability, including without limitation special, consequential or
    incidental damages.

    isc website：www.iscsemi.cn 2 isc & iscsemi is registered trademark

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