High-Performance Silicon-Gate CMOS: Semiconductor Technical Data
High-Performance Silicon-Gate CMOS: Semiconductor Technical Data
High-Performance Silicon-Gate CMOS: Semiconductor Technical Data
SEMICONDUCTOR TECHNICAL DATA
High–Performance Silicon–Gate CMOS
The MC74HC20 is identical in pinout to the LS20. The device inputs are N SUFFIX
compatible with standard CMOS outputs; with pullup resistors, they are PLASTIC PACKAGE
14 CASE 646–06
compatible with LSTTL outputs.
• Output Drive Capability: 10 LSTTL Loads 1
LOGIC DIAGRAM
PIN ASSIGNMENT
1
A1 2 A1 1 14 VCC
B1 6
4 Y1
C1 B1 2 13 D2
5
D1
Y = ABCD NC 3 12 C2
9
A2 10 C1 4 11 NC
B2 6
12 Y1
C2 D1 5 10 B2
13
D2
Y1 6 9 A2
PIN 14 = VCC GND 7 8 Y2
PIN 7 = GND
PINS 3, 11 = NO CONNECTION
FUNCTION TABLE
Inputs Output
A B C D Y
L X X X H
X L X X H
X X L X H
X X X L H
H H H H L
10/95
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Symbol Parameter Value Unit This device contains protection
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
VCC DC Supply Voltage (Referenced to GND) – 0.5 to + 7.0 V circuitry to guard against damage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
due to high static voltages or electric
Vin DC Input Voltage (Referenced to GND) – 1.5 to VCC + 1.5 V fields. However, precautions must
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Vout DC Output Voltage (Referenced to GND) – 0.5 to VCC + 0.5 V
be taken to avoid applications of any
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
voltage higher than maximum rated
Iin DC Input Current, per Pin ± 20 mA voltages to this high–impedance cir-
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
cuit. For proper operation, Vin and
Iout DC Output Current, per Pin ± 25 mA
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Vout should be constrained to the
ICC v v
DC Supply Current, VCC and GND Pins ± 50 mA range GND (Vin or Vout) VCC.
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Unused inputs must always be
PD Power Dissipation in Still Air Plastic DIP† 750 mW
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tied to an appropriate logic voltage
SOIC Package† 500 level (e.g., either GND or VCC).
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _C
Tstg Storage Temperature – 65 to + 150 Unused outputs must be left open.
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
TL Lead Temperature, 1 mm from Case for 10 Seconds _C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(Plastic DIP or SOIC Package) 260
* Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
†Derating — Plastic DIP: – 10 mW/_C from 65_ to 125_C
SOIC Package: – 7 mW/_C from 65_ to 125_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
For high frequency or heavy load considerations, see Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
RECOMMENDED OPERATING CONDITIONS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Symbol Parameter Min Max Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
VCC DC Supply Voltage (Referenced to GND) 2.0 6.0 V
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Vin, Vout DC Input Voltage, Output Voltage (Referenced to GND) 0 VCC V
_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
TA Operating Temperature, All Package Types – 55 + 125
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
tr, tf Input Rise and Fall Time VCC = 2.0 V 0 1000 ns
(Figure 1) VCC = 4.5 V 0 500
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ
ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
VCC = 6.0 V 0 400
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ Guaranteed Limit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
v ÎÎÎÎ
v ÎÎÎ
VCC – 55 to
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Symbol Parameter Test Conditions V 25_C 85_C 125_C Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
VIH Minimum High–Level Input Vout = 0.1 V or VCC – 0.1 V 2.0 1.5 1.5 1.5 V
v 20 µA
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Voltage |Iout| 4.5 3.15 3.15 3.15
6.0 4.2 4.2 4.2
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
VIL Maximum Low–Level Input
v
Vout = 0.1 V or VCC – 0.1 V 2.0 0.3 0.3 0.3 V
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Voltage |Iout| 20 µA 4.5 0.9 0.9 0.9
6.0 1.2 1.2 1.2
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
VOH
v ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Minimum High–Level Output Vin = VIH or VIL 2.0 1.9 1.9 1.9 V
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ 20 µA
Voltage |Iout| 4.5 4.4 4.4 4.4
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
v ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
6.0 5.9 5.9 5.9
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Vin = VIH or VIL |Iout| 4.0 mA 4.5 3.98 3.84 3.70
v |Iout| 5.2 mA 6.0 5.48 5.34 5.20
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
VOL
v ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Maximum Low–Level Output Vin = VIH or VIL 2.0 0.1 0.1 0.1 V
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Voltage |Iout| 20 µA 4.5 0.1 0.1 0.1
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
v ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
6.0 0.1 0.1 0.1
v
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Vin = VIH or VIL |Iout| 4.0 mA 4.5 0.26 0.33 0.40
|Iout| 5.2 mA 6.0 0.26 0.33 0.40
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Iin Maximum Input Leakage Current Vin = VCC or GND 6.0 ± 0.1 ± 1.0 ± 1.0 µA
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ICC Maximum Quiescent Supply Vin = VCC or GND 6.0 2 20 40 µA
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Current (per Package) Iout = 0 µA
NOTE: Information on typical parametric values can be found in Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6.0 ns)
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Guaranteed Limit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
v ÎÎÎÎ
v ÎÎÎ
VCC – 55 to
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Symbol Parameter V 25_C 85_C 125_C Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tPLH, Maximum Propagation Delay, Input A, B, C, or D to Output Y 2.0 90 115 135 ns
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tPHL (Figures 1 and 2) 4.5 18 23 27
6.0 15 20 23
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tTLH, Maximum Output Transition Time, Any Output 2.0 75 95 110 ns
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tTHL (Figures 1 and 2) 4.5 15 19 22
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
6.0 13 16 19
Cin Maximum Input Capacitance — 10 10 10 pF
NOTES:
1. For propagation delays with loads other than 50 pF, see Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
2. Information on typical parametric values can be found in Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
tf tr TEST POINT
VCC
90%
INPUT 50% OUTPUT
A, B, C, OR D 10% GND
tPLH tPHL DEVICE
UNDER
90% TEST CL*
OUTPUT Y 50%
10%
tTLH tTHL
* Includes all probe and jig capacitance
A
B
Y
C
D
OUTLINE DIMENSIONS
N SUFFIX
PLASTIC DIP PACKAGE
CASE 646–06
ISSUE L
NOTES:
1. LEADS WITHIN 0.13 (0.005) RADIUS OF TRUE
POSITION AT SEATING PLANE AT MAXIMUM
14 8 MATERIAL CONDITION.
2. DIMENSION L TO CENTER OF LEADS WHEN
B FORMED PARALLEL.
3. DIMENSION B DOES NOT INCLUDE MOLD
1 7 FLASH.
4. ROUNDED CORNERS OPTIONAL.
INCHES MILLIMETERS
A DIM MIN MAX MIN MAX
A 0.715 0.770 18.16 19.56
F L B 0.240 0.260 6.10 6.60
C 0.145 0.185 3.69 4.69
D 0.015 0.021 0.38 0.53
F 0.040 0.070 1.02 1.78
C G 0.100 BSC 2.54 BSC
H 0.052 0.095 1.32 2.41
J J 0.008 0.015 0.20 0.38
N K 0.115 0.135 2.92 3.43
L 0.300 BSC 7.62 BSC
SEATING
PLANE K M 0_ 10_ 0_ 10_
H G D M N 0.015 0.039 0.39 1.01
D SUFFIX
PLASTIC SOIC PACKAGE
CASE 751A–03
ISSUE F
NOTES:
–A– 1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE
14 8 MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
–B– P 7 PL PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
1 7
0.25 (0.010) M B M PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
G MILLIMETERS INCHES
R X 45° F
DIM MIN MAX MIN MAX
C A 8.55 8.75 0.337 0.344
B 3.80 4.00 0.150 0.157
C 1.35 1.75 0.054 0.068
D 0.35 0.49 0.014 0.019
SEATING K M J F 0.40 1.25 0.016 0.049
PLANE
D 14 PL G 1.27 BSC 0.050 BSC
J 0.19 0.25 0.008 0.009
0.25 (0.010) M T B S A S
K 0.10 0.25 0.004 0.009
M 0° 7° 0° 7°
P 5.80 6.20 0.228 0.244
R 0.25 0.50 0.010 0.019
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*MC74HC20/D*
◊ CODELINE MC74HC20/D
High–Speed CMOS Logic Data 5 MOTOROLA
DL129 — Rev 6