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    The document discusses the energy band structure of semiconductors. It explains that semiconductors are insulators at 0 K due to tight binding of electrons to atoms. As temperature increases, thermal energy breaks some atomic bonds, freeing some electrons and leaving behind positively charged holes. Holes can be considered charge carriers that move in the opposite direction of electrons, allowing semiconductors to conduct electricity intrinsically above 0 K. The document also provides equations to calculate the band gap of germanium, silicon, and gallium arsenide at different temperatures.

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    4 6592 68

    Uploaded by

    Stark
    24 views16 pages
    The document discusses the energy band structure of semiconductors. It explains that semiconductors are insulators at 0 K due to tight binding of electrons to atoms. As temperature increases, thermal energy breaks some atomic bonds, freeing some electrons and leaving behind positively charged holes. Holes can be considered charge carriers that move in the opposite direction of electrons, allowing semiconductors to conduct electricity intrinsically above 0 K. The document also provides equations to calculate the band gap of germanium, silicon, and gallium arsenide at different temperatures.

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    The document discusses the energy band structure of semiconductors. It explains that semiconductors are insulators at 0 K due to tight binding of electrons to atoms. As temperature increases, thermal energy breaks some atomic bonds, freeing some electrons and leaving behind positively charged holes. Holes can be considered charge carriers that move in the opposite direction of electrons, allowing semiconductors to conduct electricity intrinsically above 0 K. The document also provides equations to calculate the band gap of germanium, silicon, and gallium arsenide at different temperatures.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    24 views16 pages

    4 6592 68

    Uploaded by

    Stark
    The document discusses the energy band structure of semiconductors. It explains that semiconductors are insulators at 0 K due to tight binding of electrons to atoms. As temperature increases, thermal energy breaks some atomic bonds, freeing some electrons and leaving behind positively charged holes. Holes can be considered charge carriers that move in the opposite direction of electrons, allowing semiconductors to conduct electricity intrinsically above 0 K. The document also provides equations to calculate the band gap of germanium, silicon, and gallium arsenide at different temperatures.

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    of 16

    ‫ﺍﻟﻣﻭﺻﻼﺕ‬

    ‫ﻭ ﺣﺯﻣﺔ‬ ‫ﺣﺯﻣﺔ‬
    ‫‪6.2 eV‬‬ ‫ﺍﻟﺣﺯﻣﺔ‬
    ‫‪6.2ev‬‬ ‫ﺣﺯﻣﺔ‬ ‫ﺣﺯﻣﺔ‬
    ‫‪6.2*108‬‬

    ‫‪10 -8‬‬

    ‫ﺍﺷﺑﺎﻩ ﺍﻟﻣﻭﺻﻼﺕ‬
    ‫) ‪(1‬‬
    ‫ﺣﺯﻣﺔ‬ ‫ﻓﺟﻭﺓ ﺍﻟﻁﺎﻗﺔ‬
    ‫ﺣﺯﻣﺔ‬ ‫ﺣﺯﻣﺔ‬
    ‫ﺍﻟﺣﺯﻣﺔ ﺍﻟﻣﺣﻅﻭﺭﺓ ﻳﻌﺗﻣﺩ ﻋﻠﻰ ﺩﺭﺟﺔ ﺍﻟﺣﺭﺍﺭﺓ‬ ‫ﺍﻟﺣﺯﻣﺔ ﺍﻟﻣﺣﻅﻭﺭﺓ ‪1.21 eV‬‬
    ‫ﻟﻠﺣﺯﻣﺔ ﺍﻟﻣﺣﻅﻭﺭﺓ ﻫﻲ ﻋﻧﺩ ‪ 0‬ﻣﻁﻠﻕ‬
    ‫ﺣﺯﻣﺔ‬ ‫ﺍﻟﻣﻧﻁﻘﺔ‬
    ‫ﺣﺯﻣﺔ‬

    ‫ﺍﻟﺷﻛﻝ ) ‪(1‬ﻣﺧﻁﻁ ﺣﺯﻡ ﺍﻟﻁﺎﻗﺔ ﻟﻠﻣﻭﺍﺩ ﺍﻟﻣﻭﺻﻠﺔ ﻭﺃﺷﺑﺎﻩ ﺍﻟﻣﻭﺻﻼﺕ ﻭﺍﻟﻌﻭﺍﺯﻝ‬


    ‫(ﻳﺑﻳﻥ ﺍﻋﺗﻣﺎﺩ ﻓﺟﻭﺓ ﺍﻟﻁﺎﻗﺔ ﻋﻠﻰ ﺩﺭﺟﺔ ﺍﻟﺣﺭﺍﺭﺓ ﻟﻠﺳﻠﻳﻛﻭﻥ ﻭﺍﻟﺟﺭﻣﺎﻧﻳﻭﻡ ﻭﺍﺭﺳﻧﻳﺩ ﺍﻟﻛﺎﻟﻳﻭﻡ‬2 ) ‫ﺍﻟﺷﻛﻝ‬

    Temperature dependence of the energy band gap of germanium (Ge),

    silicon (Si) and gallium arsenide (GaAs).

    Calculate the energy band gap of germanium, silicon and gallium arsenide at 300, 400, 500
    and 600 K.
    The band gap of silicon at 300 K equals:

    Similarly one finds the energy band gap for germanium and gallium arsenide, as well as at
    different temperatures, yielding:
    ‫ﻗﻳﻡ ﺍﻟﺛﻭﺍﺑﺕ ﺍﻟﺧﺎﺻﺔ ﻟﻣﻌﺎﺩﻟﺔ ﻓﺟﻭﺓ ﺍﻟﻁﺎﻗﺔ ﺍﻟﻣﺣﻅﻭﺭﺓ ‪:‬‬
    ‫‪.‬‬

    ‫ﻣﺧﻁﻁ ﺣﺯﻣﺔ ﺍﻟﻁﺎﻗﺔ ﻓﻲ ﻣﺎﺩﺓ ﺷﺑﻪ ﻣﻭﺻﻠﺔ‬


    ‫ﺗﺗﻣﻳﺯ ﺃﺷﺑﺎﻩ ﺍﻟﻣﻭﺻﻼﺕ ﺍﻟﻧﻘﻳﺔ ﺑﻣﺎ ﻳﻠﻲ ‪:‬‬
    ‫‪ - 1‬ﺗﻛﻭﻥ ﻋﺎﺯﻟﻪ ﺗﻣﺎﻣﺎ ً ﻋﻧﺩ ﺩﺭﺟﺔ ﺻﻔﺭ ﻛﺎﻟﻔﻥ ﻟﺷﺩﺓ ﺍﺭﺗﺑﺎﻁ ﺍﻹﻟﻛﺗﺭﻭﻧﺎﺕ ﺑﺫﺭﺍﺗﻬﺎ‪.‬‬
    ‫‪ -2‬ﻋﻧﺩ ﺭﻓﻊ ﺩﺭﺟﺔ ﺣﺭﺍﺭﺗﻬﺎ ﺗﺻﺑﺢ ﺍﻟﻁﺎﻗﺔ ﺍﻟﺣﺭﺍﺭﻳﺔ ﻛﺎﻓﻳﺔ ﻟﻛﺳﺭ ﺑﻌﺽ ﺍﻟﺭﻭﺍﺑﻁ ﺑﻳﻥ ﺍﻟﺫﺭﺍﺕ ﻓﺗﺗﺣﺭﺭ‬
    ‫ﺑﻌﺽ ﺍﻹﻟﻛﺗﺭﻭﻧﺎﺕ ﺗﺎﺭﻛﻪ ﻣﻛﺎﻧﻬﺎ ﻓﺟﻭﺓ ﻭﺑﺫﻟﻙ ﺗﺻﺑﺢ ﺍﻟﺑﻠﻭﺭﺓ ﻣﻭﺻﻠﺔ ﻟﻠﻛﻬﺭﺑﻳﺔ ﻋﻥ ﻁﺭﻳﻕ ﺍﻟﻔﺟﻭﺍﺕ ﺍﻟﺗﻲ‬
    ‫ﺗﺗﺣﺭﻙ ﻋﻛﺱ ﺍﻹﻟﻛﺗﺭﻭﻧﺎﺕ‪.‬‬

    ‫ﺍﻟﺗﻭﺻﻳﻠﻳﺔ ﺍﻟﻛﻬﺭﺑﺎﺋﻳﺔ ﺍﻟﺫﺍﺗﻳﺔ ﻷﺷﺑﺎﻩ ﺍﻟﻣﻭﺻﻼﺕ ﺍﻟﻧﻘﻳﺔ‬


    ‫ﻭﺗﻛﻣﻥ ﺃﻫﻣﻳﺔ ﺍﻟﻔﺟﻭﺓ ﻓﻲ ﺃﻧﻪ ﻳﻣﻛﻥ ﺍﻋﺗﺑﺎﺭﻫﺎ ﻧﺎﻗﻠﺔ ﻟﻠﺗﻳﺎﺭ ﺍﻟﻛﻬﺭﺑﺎﺋﻲ ﻣﺛﻝ ﺍﻹﻟﻛﺗﺭﻭﻥ ‪ ،‬ﻭﻹﻳﺿﺎﺡ ﺫﻟﻙ ‪.‬ﻓﺈﻧﻧﺎ‬
    ‫ﻧﺗﺧﻳﻝ ﻣﺎ ﻳﺣﺩﺙ ﻭﻫﻭ ﺃﻥ ﺇﻟﻛﺗﺭﻭﻧﺎ ﻓﻲ ﺫﺭﺓ ﻣﺟﺎﻭﺭﺓ ﻳﻣﻛﻥ ﺃﻥ ﻳﺗﺣﺭﻙ ﻟﻳﻣﻸ ﺗﻠﻙ ﺍﻟﻔﺟﻭﺓ ﻣﺧﻠﻔﺎ ﻭﺭﺍءﻩ ﻓﺟﻭﺓ‬
    ‫ﺃﺧﺭﻯ ﻟﻳﺗﺣﺭﻙ ﺇﻟﻛﺗﺭﻭﻥ ﻓﻲ ﺫﺭﺓ ﻣﺟﺎﻭﺭﺓ ﺃﺧﺭﻯ ﺃﻳﺿﺎ ﻟﻣﻸ ﺗﻠﻙ ﺍﻟﻔﺟﻭﺓ ‪ ،‬ﻭﻫﻛﺫﺍ ﻳﻣﻛﻧﻧﺎ ﺃﻥ ﻧﻌﺗﺑﺭ ﻧﻅﺭﻳﺎ ﺃﻥ‬
    ‫ﺍﻟﻔﺟﻭﺓ ﺗﺗﺣﺭﻙ ﺑﻌﻛﺱ ﺍﺗﺟﺎﻩ ﺣﺭﻛﺔ ﺍﻹﻟﻛﺗﺭﻭﻥ ‪ ،‬ﻭﻋﻠﻰ ﺫﻟﻙ ﻳﻣﻛﻥ ﺍﻋﺗﺑﺎﺭ ﺍﻟﻔﺟﻭﺓ ﺗﻣﺛﻝ ﺷﺣﻧﺔ ﻣﻭﺟﺑﺔ‬
    ‫ﻣﻘﺩﺍﺭﻫﺎ ﻳﺳﺎﻭﻱ ﻣﻘﺩﺍﺭ ﺷﺣﻧﺔ ﺍﻹﻟﻛﺗﺭﻭﻥ ﻭﺗﺗﺣﺭﻙ ﻓﻲ ﺍﺗﺟﺎﻩ ﻣﻌﺎﻛﺱ ﻟﺣﺭﻛﺔ ﺍﻹﻟﻛﺗﺭﻭﻥ‬

    ‫ﻋﻧﺩ ﺍﻟﺻﻔﺭ ﺍﻟﻣﻁﻠﻕ ‪، 0 ºK‬ﺗﻜﻮﻥ ﺍﻻﻟﻜﺘﺮﻭﻧﺎﺕ ﻓﻲ ﺍﻭﻁﺎ ﻣﺴﺘﻮﻯ ﻣﻦ ﺍﻟﻄﺎﻗﺔ ﻭﻋﻠﻴﻪ ﺗﻜﻮﻥ ﺍﻻﻭﺍﺻﺮ‬
    ‫ﺍﻟﺘﺴﺎﻫﻤﻴﺔ ﻣﻤﺘﻠﺌﺔ ﻭﻋﻨﺪﻣﺎ ﻳﺆﺛﺮ ﻣﺠﺎﻝ ﻛﻬﺮﺑﺎﺋﻲ ﺧﺎﺭﺟﻲ ﺻﻐﻴﺮ ﻓﺎﻥ ﺍﻻﻟﻜﺘﺮﻭﻧﺎﺕ ﻟﻦ ﺗﺘﺤﺮﻙ ﻭﻟﺬﻟﻚ ﻓﺎﻥ‬
    ‫ﺍﻟﺴﻠﻴﻜﻮﻥ )ﺷﺒﻪ ﺍﻟﻤﻮﺻﻞ ( ﻳﻌﺘﺒﺮ ﻋﺎﺯﻻ‪.‬‬
    ‫ﻭﻣﻥ ﺃﺷﻬﺭ ﺍﻟﻣﻭﺍﺩ ﺷﺑﻪ ﺍﻟﻣﻭﺻﻠﺔ )ﻋﻧﺎﺻﺭ ﺍﻟﻣﺟﻣﻭﻋﺔ ﺍﻟﺭﺍﺑﻌﺔ( ﻓﻰ ﺍﻟﺟﺩﻭﻝ ﺍﻟﺩﻭﺭﻱ )‬
    ‫ﺍﻟﺟﺭﻣﺎﻧﻳﻭﻡ ‪Ge ) 32‬ﻭ ) ﺍﻟﺳﻳﻠﻛﻭﻥ ‪ ،Si ) 14‬ﺣﻳﺙ ﺃﻥ ﻛﻝ ﻣﻧﻬﻣﺎ ﺭﺑﺎﻋﻲ ﺍﻟﺗﻛﺎﻓﺅ ‪ ،‬ﻓﺗﺗﺣﺩ ﻛﻝ‬
    ‫ﺫﺭﺓ ﻣﻥ ﺫﺭﺍﺕ ﺍﻟﺟﺭﻣﺎﻧﻳﻭﻡ ﻣﻊ ﺃﺭﺑﻊ ﺫﺭﺍﺕ ﺟﺭﻣﺎﻧﻳﻭﻡ ﻣﺟﺎﻭﺭﺓ ﺑﺭﻭﺍﺑﻁ ﺗﺳﺎﻫﻣﻳﺔ ﺑﺣﻳﺙ ﺗﺻﺑﺢ ﺃﻱ‬
    ‫ﺫﺭﺓ ﻣﺣﺎﻁﺔ ﺑﺛﻣﺎﻧﻳﺔ ﺇﻟﻛﺗﺭﻭﻧﺎﺕ ﻛﻣﺎ ﺑﺎﻟﺷﻛﻝ ﺍﻟﺗﺎﻟﻲ ﻟﺗﻛﻭﻳﻥ ﺑﻠﻭﺭﺓ ﺟﺭﻣﺎﻧﻳﻭﻡ ﻧﻘﻳﻪ ‪ ) ،‬ﻭﺑﺎﻟﻣﺛﻝ‬
    ‫ﺫﺭﺍﺕ ﺍﻟﺳﻳﻠﻛﻭﻥ‪) .‬‬
    ‫ﺃﺩﻧﺎﻩ‬
    ‫ﺃﻋﻼﻩ‬

    ‫ﺃﻋﻼﻩ‪-‬‬
    ‫ﺃﺩﻧﺎﻩ ‪-‬‬
    11

    4
    ‫‪5‬‬

    ‫‪6‬‬

    ‫‪7‬‬

    ‫‪8‬‬

    ‫ﻧﺣﺻﻝ ﻋﻠﻰ ‪:‬‬

    ‫‪9‬‬

    ‫‪10‬‬
    11

    12
    ‫ﺃﺩﻧﺎﻩ‬

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