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SG2524, SG3524
SLVS077E – APRIL 1977 – REVISED JANUARY 2015

SGx524 Regulating Pulse-Width Modulators

1 Features 3 Description
1• Complete Pulse-Width Modulation (PWM) Power- The SG2524 and SG3524 devices incorporate all the
Control Circuitry functions required in the construction of a regulating
power supply, inverter, or switching regulator on a
• Uncommitted Outputs for Single-Ended or Push- single chip. They also can be used as the control
Pull Applications element for high-power-output applications. The
• 8 mA (TYP) Standby Current SG2524 and SG3524 were designed for switching
regulators of either polarity, transformer-coupled dc-
2 Applications to-dc converters, transformerless voltage doublers,
and polarity-converter applications employing fixed-
• Transformer-coupled DC/DC convertors frequency, pulse-width modulation (PWM)
• Switching-regulators of any polarity techniques. The complementary output allows either
single-ended or push-pull application. Each device
includes an on-chip regulator, error amplifier,
programmable oscillator, pulse-steering flip-flop, two
uncommitted pass transistors, a high-gain
comparator, and current-limiting and shutdown
circuitry.

Device Information(1)
PART NUMBER PACKAGE (PIN) BODY SIZE (NOM)
SOIC (16) 9.90 mm × 3.91 mm
SGx524 PDIP (16) 9.90 mm × 6.35 mm
NS (16) 10.30 mm × 5.30 mm

(1) For all available packages, see the orderable addendum at

the end of the datasheet.

4 Pinout Drawing

An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
SG2524, SG3524
SLVS077E – APRIL 1977 – REVISED JANUARY 2015 www.ti.com

Table of Contents
1 Features .................................................................. 1 9.2 Functional Block Diagram ......................................... 9
2 Applications ........................................................... 1 9.3 Feature Description................................................. 10
3 Description ............................................................. 1 9.4 Device Functional Modes........................................ 11
4 Pinout Drawing....................................................... 1 10 Application and Implementation........................ 12
10.1 Application Information.......................................... 12
5 Revision History..................................................... 2
10.2 Typical Application ................................................ 14
6 Pin Configurations and Functions ....................... 3
10.3 Examples of Other Output Stages ........................ 16
7 Specifications......................................................... 4
11 Power Supply Recommendations ..................... 18
7.1 Absolute Maximum Ratings ..................................... 4
7.2 ESD Ratings.............................................................. 4 12 Layout................................................................... 18
12.1 Layout Guidelines ................................................. 18
7.3 Recommended Operating Conditions....................... 4
12.2 Layout Example .................................................... 19
7.4 Thermal Information .................................................. 4
7.5 Electrical Characteristics........................................... 5 13 Device and Documentation Support ................. 20
7.6 Electrical Characteristics — Continued, Both Parts.. 6 13.1 Related Links ........................................................ 20
7.7 Typical Characteristics .............................................. 7 13.2 Trademarks ........................................................... 20
13.3 Electrostatic Discharge Caution ............................ 20
8 Parameter Measurement Information .................. 8
13.4 Glossary ................................................................ 20
9 Detailed Description .............................................. 9
9.1 Overview ................................................................... 9 14 Mechanical, Packaging, and Orderable
Information ........................................................... 20

5 Revision History
Changes from Revision I (February 2003) to Revision J Page

• Added Applications, Device Information table, Pin Functions table, ESD Ratings table, Thermal Information table,
Typical Characteristics, Feature Description section, Device Functional Modes, Application and Implementation
section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and
Mechanical, Packaging, and Orderable Information section. ................................................................................................. 1
• Deleted Ordering Information table. ....................................................................................................................................... 1

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6 Pin Configurations and Functions

Pin Functions
PIN
TYPE DESCRIPTION
NAME NO.
COL 1 12 O Collector terminal of BJT output 1
COL 2 13 O Collector terminal of BJT output 2
COMP 9 I/O Error amplifier compensation pin
CT 7 — Capacitor terminal used to set oscillator frequency
CURR LIM+ 4 I Positive current limiting amplifier input
CURR LIM- 5 I Negative current limiting amplifier input
EMIT 1 11 O Emitter terminal of BJT output 1
EMIT 2 14 O Emitter terminal of BJT output 2
GND 8 — Ground
IN+ 2 I Positive error amplifier input
IN- 1 I Positive error amplifier input
OSC OUT 3 O Oscillator Output
REF OUT 16 O Reference regulator output
RT 6 — Resistor terminal used to set oscillator frequency
SHUTDOWN 10 I Device shutdown
VCC 15 — Positive supply

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7 Specifications
7.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1)
MIN MAX UNIT
VCC Supply voltage (2) (3) 40 V
ICC Collector output current 100 mA
IO(ref) Reference output current 50 mA
Current through CT terminal –5 mA
TJ Maximum junction temperature 150 °C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds 260 °C
Tstg Storage temperature range –65 150 °C

(1) Stresses beyond those listed under Absolute Maximum Ratings table may cause permanent damage to the device. These are stress
ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions table are not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability.
(2) All voltage values are with respect to network ground terminal.
(3) The reference regulator may be bypassed for operation from a fixed 5-V supply by connecting the VCC and reference output (REF
OUT) pin both to the supply voltage. In this configuration, the maximum supply voltage is 6 V.

7.2 ESD Ratings

VALUE UNIT
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all
1000
pins (1)
V(ESD) Electrostatic discharge V
Charged device model (CDM), per JEDEC specification JESD22-
1000
C101, all pins (2)

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
VCC Supply Voltage 8 40 V
Reference output current 0 50 mA
Current through CT terminal –0.03 –2 mA
RT Timing resistor 1.8 100 kΩ
CT Timing capacitor 0.001 0.1 µF
SG2524 –25 85
TA Operating free-air temperature °C
SG3524 0 70

7.4 Thermal Information

SGx524
THERMAL METRIC (1) D N NS UNIT
16 PINS
RθJA Junction-to-ambient thermal resistance (2) (3) 73 67 64 °C/W

(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
(2) Maximum power dissipation is a function of TJ(max), θJA, and TA. The maximum allowable power dissipation at any allowable ambient
temperature is PD = (TJ(max) – TA)/θJA. Operation at the absolute maximum TJ of 150°C can impact reliability.
(3) The package thermal impedance is calculated in accordance with JESD 51-7.

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7.5 Electrical Characteristics

over operating free-air temperature range, VCC = 20 V, f = 20 kHz (unless otherwise noted)
SG2524 SG3524
PARAMETER TEST CONDITIONS (1) UNIT
MIN TYP (1) MAX MIN TYP (2) MAX
Reference section
Output voltage 4.8 5 5.2 4.6 5 5.4 V
Input Regulation VCC = 8 V to 40 V 10 20 10 30 mV
Ripple rejection f = 120 Hz 66 66 dB
Output regulation IO = 0 mA to 20 mA 20 50 20 50 mV
Output voltage change with temperature TA = MIN to MAX 0.3% 1% 0.3% 1%
Short-circuit output current (3) Vref = 0 100 100 mA
Error Amplifier section
VIO Input offset voltage VIC = 2.5 V 0.5 5 2 10 mV
IIB Input bias current VIC = 2.5 V 2 10 2 10 µA
Open-loop voltage amplification 72 80 60 80 dB
1.8 to 1.8 to
VICR Common-monde input voltage range TA = 25°C V
3.4 3.4
CMMR Common-mode rejection ratio 70 70 dB
B1 Unity-gain bandwidth 3 3 MHz
Output swing TA = 25°C 0.5 3.8 0.5 3.8 V

(1) For conditions shown as MIN or MAX, use the appropriate value specified under recommended operating conditions.
(2) All typical values, except for temperature coefficients, are at TA = 25°C.
(3) Standard deviation is a measure of the statistical distribution about the mean, as derived from the formula:
N 2

å( xn - x )
n -1
s=
N -1

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7.6 Electrical Characteristics — Continued, Both Parts

over operating free-air temperature range, VCC = 20 V, f = 20 kHz (unless otherwise noted)
PARAMETER TEST CONDITIONS (1) MIN TYP (2) MAX UNIT
Oscillator section
fOSC Oscillator frequency CT = 0.001 μF, RT = 2 kΩ 450 kHz
(3) All values of voltage, temperature,
Standard deviation of frequency 5 —
resistance, and capacitance constant
Frequency chance with voltage VCC = 8 V to 40 V, TA = 25°C 1%
ΔfOSC —
Frequency change with temperature TA = MIN to MAX 2%
Output amplitude at OSC OUT TA = 25°C 3.5 V
tW Output pulse duration (width) at OSC OUT CT = 0.01 μF, TA = 25°C 0.5 µs
Output section
V(BR)CE Collector-emitter breakdown voltage 40 V
Collector off-state current VCE = 40 V 0.01 50 µA
Vsat Collector-emitter saturation voltage IC = 50 mA 1 2 V
VO Emitter output voltage VC = 20 V, IE = –250 μA 17 18 V
tr Turn-off voltage rise time RC = 2 kΩ 0.2 µs
tf Turn-on voltage fall time RC = 2 kΩ 0.1 µs
Comparator section
Maximum duty cycle, each output 45%
Zero duty cycle 1
VIT Input threshold voltage at COMP V
Maximum duty cycle 3.5
IIB Input bias current –1 µA
Current limiting section
VI Input voltage range –1 1 V
V(SENSE) Sense voltage at TA = 25°C 175 200 225 mV
V(IN+)–V(IN–) ≥ 50 mV V(COMP) 2 V
Temperature coefficient of sense voltage 0.2 mV/°C
Total Device
VCC = 40 V, IN–, CURR LIM+, CT,
GND, COMP, EMIT 1, EMIT 2
Ist Standby current 8 10 mA
grounded, IN+ at 2 V, All other inputs
and outputs open

(1) For conditions shown as MIN or MAX, use the appropriate value specified under recommended operating conditions.
(2) All typical values, except for temperature coefficients, are at TA = 25°C.
(3) Standard deviation is a measure of the statistical distribution about the mean, as derived from the formula:
N 2

å (xn - x )
n -1
s=
N -1

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7.7 Typical Characteristics

Figure 1. Open-Loop Voltage Amplification of Error

Figure 2. Oscillator Frequency vs Timing Resistance
Amplifier vs Frequency

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8 Parameter Measurement Information

Figure 3. General Test Circuit

Figure 4. Switching Times

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9 Detailed Description

9.1 Overview
SGx524 is a fixed-frequency pulse-width-modulation (PWM) voltage-regulator control circuit. The regulator
operates at a fixed frequency that is programmed by one timing resistor, RT, and one timing capacitor, CT. RT
establishes a constant charging current for CT. This results in a linear voltage ramp at CT, which is fed to the
comparator, providing linear control of the output pulse duration (width) by the error amplifier.
The SGx524 contains an onboard 5-V regulator that serves as a reference, as well as supplying the SGx524
internal regulator control circuitry. The internal reference voltage is divided externally by a resistor ladder network
to provide a reference within the common-mode range of the error amplifier as shown in Figure 11, or an external
reference can be used.
The output is sensed by a second resistor divider network and the error signal is amplified. This voltage is then
compared to the linear voltage ramp at CT. The resulting modulated pulse out of the high-gain comparator then is
steered to the appropriate output pass transistor (Q1 or Q2) by the pulse-steering flip-flop, which is
synchronously toggled by the oscillator output. The oscillator output pulse also serves as a blanking pulse to
ensure both outputs are never on simultaneously during the transition times. The duration of the blanking pulse is
controlled by the value of CT.
The outputs may be applied in a push-pull configuration in which their frequency is one-half that of the base
oscillator, or paralleled for single-ended applications in which the frequency is equal to that of the oscillator. The
output of the error amplifier shares a common input to the comparator with the current-limiting and shut-down
circuitry and can be overridden by signals from either of these inputs. This common point is pinned out externally
via the COMP pin, which can be employed to either control the gain of the error amplifier or to compensate it. In
addition, the COMP pin can be used to provide additional control to the regulator.

9.2 Functional Block Diagram

A. Resistor values shown are nominal.

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9.3 Feature Description

9.3.1 Blanking
The output pulse of the oscillator is used as a blanking pulse at the output. This pulse duration is controlled by
the value of CT as shown in Figure 2. If small values of CT are required, the oscillator output pulse duration can
be maintained by applying a shunt capacitance from OSC OUT to ground.

9.3.2 Error Amplifier

The error amplifier is a differential-input transconductance amplifier. The output is available for DC gain control or
AC phase compensation. The compensation node (COMP) is a high-impedance node (RL = 5 MΩ). The gain of
the amplifier is AV = (0.002 Ω–1)RL and easily can be reduced from a nominal 10,000 by an external shunt
resistance from COMP to ground. Refer to Figure 1 for data.

9.3.3 Compensation
COMP, as previously discussed, is made available for compensation. Since most output filters introduce one or
more additional poles at frequencies below 200 Hz, which is the pole of the uncompensated amplifier,
introduction of a zero to cancel one of the output filter poles is desirable. This can be accomplished best with a
series RC circuit from COMP to ground in the range of 50 kΩ and 0.001 μF. Other frequencies can be canceled
by use of the formula f ≈ 1/RC.

9.3.4 Output Circuitry

SGx524 contains two identical npn transistors, the collectors and emitters of which are uncommitted. Each
transistor has antisaturation circuitry that limits the current through that transistor to a maximum of 100 mA for
fast response.

9.3.5 Current Limiting

A current-limiting sense amplifier is provided in the SGx524 device. The current-limiting sense amplifier exhibits a
threshold of 200 mV ±25 mV and must be applied in the ground line since the voltage range of the inputs is
limited to 1 V to –1 V. Caution should be taken to ensure the –1-V limit is not exceeded by either input,
otherwise, damage to the device may result.
Foldback current limiting can be provided with the network shown in Figure 5. The current-limit schematic is
shown in Figure 6.

1 æ VOR2 ö
IO(max) = ç 200 mV + ÷
RS è R1 + R2 ø
200 mV
IOS =
RS

Figure 5. Foldback Current Limiting for Shorted Output Conditions

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Feature Description (continued)

Figure 6. Current-Limit Schematic

9.4 Device Functional Modes

9.4.1 Synchronous Operation
When an external clock is desired, a clock pulse of approximately 3 V can be applied directly to the oscillator
output terminal. The impedance to ground at this point is approximately 2 kΩ. In this configuration, RTCT must be
selected for a clock period slightly greater than that of the external clock.
If two or more SGx524 regulators are operated synchronously, all oscillator output terminals must be tied
together. The oscillator programmed for the minimum clock period is the master from which all the other
SGx524s operate. In this application, the CTRT values of the slaved regulators must be set for a period
approximately 10% longer than that of the master regulator. In addition, CT (master) = 2 CT (slave) to ensure that
the master output pulse, which occurs first, has a longer pulse duration and, subsequently, resets the slave
regulators.

9.4.2 Shutdown Circuitry

COMP also can be employed to introduce external control of the SGx524. Any circuit that can sink 200 μA can
pull the compensation terminal to ground and, thus, disable the SGx524.
In addition to constant-current limiting, CURR LIM+ and CURR LIM– also can be used in transformer-coupled
circuits to sense primary current and shorten an output pulse should transformer saturation occur. CURR LIM–
also can be grounded to convert CURR LIM+ into an additional shutdown terminal.

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10 Application and Implementation

NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.

10.1 Application Information

There are a wide variety of output configurations possible when considering the application of the SG2524 as a
voltage-regulator control circuit. They can be segregated into three basic categories:
• Capacitor-diode-coupled voltage multipliers
• Inductor-capacitor-implemented single-ended circuits
• Transformer-coupled circuits
Examples of these categories are shown in Figure 7, Figure 8, and Figure 9, respectively. Typical Application
demonstrates how to set up the SG2524 for a capacitor-diode output design. The same techniques for setting up
the internal circuitry of the IC may also be used for the other two output stage examples shown Examples of
Other Output Stages.

Figure 7. Capacitor-Diode-Coupled Voltage-Multiplier Output Stages

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Application Information (continued)

Figure 8. Single-Ended Inductor Circuit

Figure 9. Transformer-Coupled Outputs

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10.2 Typical Application

10.2.1 Capacitor-Diode Output

Figure 10. Capacitor-Diode Output Circuit Schematic

10.2.1.1 Design Requirements

• 15-V supply voltage
• –5-V output voltage

10.2.1.2 Detailed Design Procedure

10.2.1.2.1 Oscillator
The oscillator controls the frequency of the SG2524 and is programmed by RT and CT as shown in Figure 12.
1.30
f»
R T RC

where
• RT is in kΩ
• CT is in μF
• f is in kHz (1)
Practical values of CT fall between 0.001 μF and 0.1 μF. Practical values of RT fall between 1.8 kΩ and 100 kΩ.
This results in a frequency range typically from 130 Hz to 722 kHz.

10.2.1.2.2 Voltage Reference

The 5-V internal reference can be employed by use of an external resistor divider network to establish a
reference common-mode voltage range (1.8 V to 3.4 V) within the error amplifiers (see Figure 11), or an external
reference can be applied directly to the error amplifier. For operation from a fixed 5-V supply, the internal
reference can be bypassed by applying the input voltage to both the VCC and VREF terminals. In this
configuration, however, the input voltage is limited to a maximum of 6 V.

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Typical Application (continued)

R1 + R2 æ R2 ö
VO = 2.5 V VO = 2.5 V ç 1 -
R1 è R1 ÷ø

Figure 11. Error-Amplifier Bias Circuits

10.2.1.3 Application Curves

Figure 12. Output Dead Time vs Timing Capacitance

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10.3 Examples of Other Output Stages

10.3.1 Flyback Converter

Figure 13. Flyback Converter Circuit Schematic

10.3.2 Single-Ended LC

Figure 14. Single-Ended LC Circuit Schematic

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Examples of Other Output Stages (continued)

10.3.3 Push-Pull Transformer-Coupled

Figure 15. Push-Pull Transformer-Coupled Circuit Schematic

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11 Power Supply Recommendations

SGx524 is designed to operate from an input voltage supply range between 8 V and 40 V. This input supply
should be well regulated. If the input supply is located more than a few inches from the device, additional bulk
capacitance may be required in addition to the ceramic bypass capacitors. A tantalum capacitor with a value of
47 μF is a typical choice, however this may vary depending upon the output power being delivered.

12 Layout

12.1 Layout Guidelines

Always try to use a low EMI inductor with a ferrite type closed core. Some examples would be toroid and
encased E core inductors. Open core can be used if they have low EMI characteristics and are located a bit
more away from the low power traces and components. Make the poles perpendicular to the PCB as well if using
an open core. Stick cores usually emit the most unwanted noise.

12.1.1 Feedback Traces

Try to run the feedback trace as far from the inductor and noisy power traces as possible. You would also like
the feedback trace to be as direct as possible and somewhat thick. These two sometimes involve a trade-off, but
keeping it away from inductor EMI and other noise sources is the more critical of the two. Run the feedback trace
on the side of the PCB opposite of the inductor with a ground plane separating the two.

12.1.2 Input/Output Capacitors

When using a low value ceramic input filter capacitor, it should be located as close to the VIN pin of the IC as
possible. This will eliminate as much trace inductance effects as possible and give the internal IC rail a cleaner
voltage supply. Some designs require the use of a feed-forward capacitor connected from the output to the
feedback pin as well, usually for stability reasons. In this case it should also be positioned as close to the IC as
possible. Using surface mount capacitors also reduces lead length and lessens the chance of noise coupling into
the effective antenna created by through-hole components.

12.1.3 Compensation Components

External compensation components for stability should also be placed close to the IC. Surface mount
components are recommended here as well for the same reasons discussed for the filter capacitors. These
should not be located very close to the inductor either.

12.1.4 Traces and Ground Planes

Make all of the power (high-current) traces as short, direct, and thick as possible. It is good practice on a
standard PCB board to make the traces an absolute minimum of 15 mils (0.381 mm) per ampere. The inductor,
output capacitors, and output diode should be as close to each other possible. This helps reduce the EMI
radiated by the power traces due to the high switching currents through them. This will also reduce lead
inductance and resistance as well, which in turn reduces noise spikes, ringing, and resistive losses that produce
voltage errors.
The grounds of the IC, input capacitors, output capacitors, and output diode (if applicable) should be connected
close together directly to a ground plane. It would also be a good idea to have a ground plane on both sides of
the PCB. This will reduce noise as well by reducing ground loop errors as well as by absorbing more of the EMI
radiated by the inductor. For multi-layer boards with more than two layers, a ground plane can be used to
separate the power plane (where the power traces and components are) and the signal plane (where the
feedback and compensation and components are) for improved performance. On multi-layer boards the use of
vias will be required to connect traces and different planes. It is good practice to use one standard via per 200
mA of current if the trace will need to conduct a significant amount of current from one plane to the other.
Arrange the components so that the switching current loops curl in the same direction. Due to the way switching
regulators operate, there are two power states. One state when the switch is on and one when the switch is off.
During each state there will be a current loop made by the power components that are currently conducting.
Place the power components so that during each of the two states the current loop is conducting in the same
direction. This prevents magnetic field reversal caused by the traces between the two half-cycles and reduces
radiated EMI.
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12.2 Layout Example

LEGEND
Power or GND Plane
VIA to Power Plane
VIA to GND Plane

OUTPUT VCC

1 IN± REF OUT 16

2 IN+ VCC 15

3 OSC OUT EMIT 2 14

4 CURR LIM+ COL 2 13

+

5 CURR LIM± COL 1 12

6 RT EMIT 1 11

+
7 CT SHUTDOWN 10

8 GND COMP 9

SG2524
GND

Figure 16. Layout Example for SG2524

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13 Device and Documentation Support

13.1 Related Links

The table below lists quick access links. Categories include technical documents, support and community
resources, tools and software, and quick access to sample or buy.

Table 1. Related Links

TECHNICAL TOOLS & SUPPORT &
PARTS PRODUCT FOLDER SAMPLE & BUY
DOCUMENTS SOFTWARE COMMUNITY
SG2524 Click here Click here Click here Click here Click here
SG3524 Click here Click here Click here Click here Click here

13.2 Trademarks
All trademarks are the property of their respective owners.
13.3 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.

13.4 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.

14 Mechanical, Packaging, and Orderable Information

The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.

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 PACKAGE OPTION ADDENDUM

www.ti.com 10-Dec-2020

PACKAGING INFORMATION

Orderable Device Status Package Type Package Pins Package Eco Plan Lead finish/ MSL Peak Temp Op Temp (°C) Device Marking Samples
(1) Drawing Qty (2) Ball material (3) (4/5)
(6)

SG2524D ACTIVE SOIC D 16 40 RoHS & Green NIPDAU Level-1-260C-UNLIM -25 to 85 SG2524

SG2524DR ACTIVE SOIC D 16 2500 RoHS & Green NIPDAU Level-1-260C-UNLIM -25 to 85 SG2524

SG2524DRE4 ACTIVE SOIC D 16 2500 RoHS & Green NIPDAU Level-1-260C-UNLIM -25 to 85 SG2524

SG2524DRG4 ACTIVE SOIC D 16 2500 RoHS & Green NIPDAU Level-1-260C-UNLIM -25 to 85 SG2524

SG2524N ACTIVE PDIP N 16 25 RoHS & Green NIPDAU N / A for Pkg Type -25 to 85 SG2524N

SG3524D ACTIVE SOIC D 16 40 RoHS & Green NIPDAU Level-1-260C-UNLIM 0 to 70 SG3524

SG3524DR ACTIVE SOIC D 16 2500 RoHS & Green NIPDAU Level-1-260C-UNLIM 0 to 70 SG3524

SG3524DRE4 ACTIVE SOIC D 16 2500 RoHS & Green NIPDAU Level-1-260C-UNLIM 0 to 70 SG3524

SG3524N ACTIVE PDIP N 16 25 RoHS & Green NIPDAU N / A for Pkg Type 0 to 70 SG3524N

SG3524NE4 ACTIVE PDIP N 16 25 RoHS & Green NIPDAU N / A for Pkg Type 0 to 70 SG3524N

SG3524NSR ACTIVE SO NS 16 2000 RoHS & Green NIPDAU Level-1-260C-UNLIM 0 to 70 SG3524

(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.

(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.

(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.

Addendum-Page 1
 PACKAGE OPTION ADDENDUM

www.ti.com 10-Dec-2020

(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.

(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.

(6)
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.

Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.

In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.

Addendum-Page 2
 PACKAGE MATERIALS INFORMATION

www.ti.com 7-Nov-2014

TAPE AND REEL INFORMATION

*All dimensions are nominal

Device Package Package Pins SPQ Reel Reel A0 B0 K0 P1 W Pin1
Type Drawing Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) W1 (mm)
SG2524DR SOIC D 16 2500 330.0 16.4 6.5 10.3 2.1 8.0 16.0 Q1
SG2524DRG4 SOIC D 16 2500 330.0 16.4 6.5 10.3 2.1 8.0 16.0 Q1
SG3524DR SOIC D 16 2500 330.0 16.4 6.5 10.3 2.1 8.0 16.0 Q1
SG3524NSR SO NS 16 2000 330.0 16.4 8.2 10.5 2.5 12.0 16.0 Q1

Pack Materials-Page 1
 PACKAGE MATERIALS INFORMATION

www.ti.com 7-Nov-2014

*All dimensions are nominal

Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
SG2524DR SOIC D 16 2500 333.2 345.9 28.6
SG2524DRG4 SOIC D 16 2500 333.2 345.9 28.6
SG3524DR SOIC D 16 2500 333.2 345.9 28.6
SG3524NSR SO NS 16 2000 367.0 367.0 38.0

Pack Materials-Page 2
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