MDI5N40 N-channel MOSFET 400V

MDI5N40/MDD5N40
Ω
N-Channel MOSFET 400V, 3.4 A, 1.6Ω

General Description Features

The MDI5N40 / MDD5N40 use advanced
VDS = 400V
Magnachip’s MOSFET Technology, which provides
ID = 3.4A @VGS = 10V
low on-state resistance, high switching performance
RDS(ON) ≤ 1.6Ω @VGS = 10V
and excellent quality.

MDI5N40 is suitable device for SMPS, HID and

general purpose applications. Applications

Power Supply

PFC

Ballast

I-PAK
GDS (TO-251)
G

Absolute Maximum Ratings (Ta = 25oC)

Characteristics Symbol Rating Unit
Drain-Source Voltage VDSS 400 V
Gate-Source Voltage VGSS ±30 V
o
TC=25 C 3.4 A
Continuous Drain Current o
ID
TC=100 C 2.15 A
(1)
Pulsed Drain Current IDM 13.6 A
o
TC=25 C 45 W
Power Dissipation PD o
o
Derate above 25 C 0.36 W/ C
(3)
Peak Diode Recovery dv/dt Dv/dt 4.5 V/ns
(4)
Repetitive Pulse Avalanche Energy EAR 4.5 mJ
(4)
Single Pulse Avalanche Energy EAS 170 mJ
o
Junction and Storage Temperature Range TJ, Tstg -55~150 C

Thermal Characteristics
Characteristics Symbol Rating Unit
(1)
Thermal Resistance, Junction-to-Ambient RθJA 110 o
(1)
C/W
Thermal Resistance, Junction-to-Case RθJC 2.75

Dec. 2011. Version 1.5 1 MagnaChip Semiconductor Ltd.

 MDI5N40 N-channel MOSFET 400V
Ordering Information

Part Number Temp. Range Package Packing RoHS Status

o
MDI5N40TH -55~150 C I-Pak Tube Halogen Free
o
MDD5N40RH -55~150 C D-Pak Reel Halogen Free

Electrical Characteristics (Ta =25oC)

Characteristics Symbol Test Condition Min Typ Max Unit
Static Characteristics
Drain-Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V 400 - -
V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 3.0 - 5.0
Drain Cut-Off Current IDSS VDS = 400V, VGS = 0V - - 1 µA
Gate Leakage Current IGSS VGS = ±30V, VDS = 0V - - 100 nA
Drain-Source ON Resistance RDS(ON) VGS = 10V, ID = 1.7A 1.2 1.6 Ω
Forward Transconductance gfs VDS = 30V, ID = 1.7A - 2.0 - S
Dynamic Characteristics
Total Gate Charge Qg - 9
(3)
Gate-Source Charge Qgs VDS = 320V, ID = 3.4A, VGS = 10V - 2.5 nC
Gate-Drain Charge Qgd - 4
Input Capacitance Ciss - 290
Reverse Transfer Capacitance Crss VDS = 25V, VGS = 0V, f = 1.0MHz - 3 pF
Output Capacitance Coss - 46
Turn-On Delay Time td(on) - 12
Rise Time tr VGS = 10V, VDS = 200V, ID = 3.4A, - 25
(3) ns
Turn-Off Delay Time td(off) RG = 25Ω - 20
Fall Time tf - 30
Drain-Source Body Diode Characteristics
Maximum Continuous Drain to Source
IS - 3.4 - A
Diode Forward Current
Source-Drain Diode Forward
VSD IS = 3.4A, VGS = 0V - 1.4 V
Voltage
Body Diode Reverse Recovery
trr - 200 ns
Time (3)
IF = 3.4A, dl/dt = 100A/µs
Body Diode Reverse Recovery
Qrr - 1.0 µC
Charge

Note :

1. Pulse width is based on R θJC & R θJA and the maximum allowed junction temperature of 150°C.
2. Pulse test: pulse width ≤300us, duty cycle≤2%, pulse width limited by junction temperature TJ(MAX)=150°C.
3. ISD ≤3.4A, di/dt≤200A/us, VDD=50V, Rg =25Ω, Starting TJ=25°C
4. L=26.0mH, IAS=3.4A, VDD=50V, Rg =25Ω, Starting TJ=25°C

Dec. 2011. Version 1.5 2 MagnaChip Semiconductor Ltd.

 MDI5N40 N-channel MOSFET 400V
10 3.4
Vgs=5.5V 3.2
9 =6.0V Notes
=6.5V 1. 250㎲ Pulse Test 3.0
8 =7.0V 2. TC=25℃
2.8
=8.0V
ID,Drain Current [A]

7 =10.0V 2.6
=15.0V

RDS(ON) [Ω ]
6 2.4

2.2
5 VGS=10.0V
2.0
4 VGS=20V
1.8
3 1.6

2 1.4

1.2
1
1.0
5 10 15 20 0 5 10

VDS,Drain-Source Voltage [V] ID,Drain Current [A]

Fig.1 On-Region Characteristics Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage

3.0 1.2

※ Notes : ※ Notes :

2.5
1. VGS = 10 V Drain-Source Breakdown Voltage 1. VGS = 0 V
2. ID = 1.7 A 2. ID = 250㎂
Drain-Source On-Resistance

1.1
BVDSS, (Normalized)
RDS(ON), (Normalized)

2.0

1.5 1.0

1.0

0.9

0.5

0.0 0.8
-50 0 50 100 150 200 -50 0 50 100 150 200
o o
TJ, Junction Temperature [ C] TJ, Junction Temperature [ C]

Fig.3 On-Resistance Variation with Fig.4 Breakdown Voltage Variation vs.

Temperature Temperature

10

* Notes ; ※ Notes :
10 1. VGS = 0 V
1. VDS=30V
2. 250us pulse
Reverse Drain Current [A]
ID [A]

IDR

25℃
1
150℃
150℃

25℃

1 0.1
4 6 8 0.0 0.2 0.4 0.6 0.8 1.0 1.2

VGS [V] VSD, Source-Drain Voltage [V]

Fig.5 Transfer Characteristics Fig.6 Body Diode Forward Voltage

Variation with Source Current and
Temperature

Dec. 2011. Version 1.5 3 MagnaChip Semiconductor Ltd.

 MDI5N40 N-channel MOSFET 400V
600
Ciss = Cgs + Cgd (Cds = shorted)
10 ※ Note : ID = 5A
C oss Coss = Cds + Cgd
80V Crss = Cgd
200V
500
VGS, Gate-Source Voltage [V]

8 320V

400

Capacitance [pF]
6 C iss

300

4
※ Notes ;
200
1. VGS = 0 V
C rss 2. f = 1 MHz
2

100

0
0
0 2 4 6 8 1 10

QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V]

Fig.7 Gate Charge Characteristics Fig.8 Capacitance Characteristics

2
10
Operation in This Area 5
is Limited by R DS(on)

1
10 µs 4
10
ID, Drain Current [A]

ID, Drain Current [A]

100 µs
3

10
0
DC 1 ms

10 ms 2

100 ms
-1
10
Single Pulse 1
TJ=Max rated
TC=25℃

-2
10 0
-1 0 1 2
10 10 10 10 25 50 75 100 125 150

VDS, Drain-Source Voltage [V] TC, Case Temperature [℃]

Fig.9 Maximum Safe Operating Area Fig.10 Maximum Drain Current vs. Case
Temperature

5000

D=0.5 single Pulse

RthJC = 2.75℃/W
4000
0 TC = 25℃
10 0.2
Thermal Response

0.1 3000
Power (W)
Zθ JC(t),

0.05

-1
2000
10 0.02

0.01
※ Notes :
Duty Factor, D=t1/t2 1000
PEAK TJ = PDM * Zθ JC* Rθ JC(t) + TC
RΘ JC=2.75℃/W
single pulse
10
-2 0
10
-5
10
-4
10
-3
10
-2
10
-1 0
10
1
10 1E-5 1E-4 1E-3 0.01 0.1 1 10
t1, Rectangular Pulse Duration [sec] Pulse Width (s)

Fig.11 Transient Thermal Response Curve Fig.12 Single Pulse Maximum Power
Dissipation

Dec. 2011. Version 1.5 4 MagnaChip Semiconductor Ltd.

 MDI5N40 N-channel MOSFET 400V
Physical Dimension

TO-251 (IPAK)
Dimensions are in millimeters, unless otherwise specified

Dec. 2011. Version 1.5 5 MagnaChip Semiconductor Ltd.

 MDI5N40 N-channel MOSFET 400V
Physical Dimension

D-PAK, 3L
Dimensions are in millimeters, unless otherwise specified

Dec. 2011. Version 1.5 6 MagnaChip Semiconductor Ltd.

 MDI5N40 N-channel MOSFET 400V

DISCLAIMER:

The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.

MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip
Semiconductor Ltd.

Dec. 2011. Version 1.5 7 MagnaChip Semiconductor Ltd.