INA128

INA129
SBOS051B − OCTOBER 1995 − REVISED FEBRUARY 2005

Precision, Low Power

INSTRUMENTATION AMPLIFIERS

FEATURES DESCRIPTION
D LOW OFFSET VOLTAGE: 50µV max The INA128 and INA129 are low power, general
D LOW DRIFT: 0.5µV/5C max purpose instrumentation amplifiers offering excellent
D LOW INPUT BIAS CURRENT: 5nA max accuracy. The versatile 3-op amp design and small size
D HIGH CMR: 120dB min make them ideal for a wide range of applications.
D INPUTS PROTECTED TO +40V Current-feedback input circuitry provides wide
D WIDE SUPPLY RANGE: +2.25V to +18V bandwidth even at high gain (200kHz at G = 100).
D LOW QUIESCENT CURRENT: 700µA A single external resistor sets any gain from 1 to 10,000.
D 8-PIN PLASTIC DIP, SO-8 The INA128 provides an industry-standard gain
equation; the INA129 gain equation is compatible with
APPLICATIONS the AD620.
D BRIDGE AMPLIFIER The INA128/INA129 is laser trimmed for very low offset
D THERMOCOUPLE AMPLIFIER voltage (50µV), drift (0.5µV/°C) and high
D RTD SENSOR AMPLIFIER common-mode rejection (120dB at G ≥ 100). It
D MEDICAL INSTRUMENTATION operates with power supplies as low as ±2.25V, and
D DATA ACQUISITION quiescent current is only 700µA—ideal for battery-
operated systems. Internal input protection can
withstand up to ±40V without damage.
The INA128/INA129 is available in 8-pin plastic DIP and
SO-8 surface-mount packages, specified for the –40°C
to +85°C temperature range. The INA128 is also
available in a dual configuration, the INA2128.

V+

7 INA128:
INA128, INA129 50kΩ
− 2 Over-Voltage
G=1+
VIN RG
Protection
A1
INA129:
40kΩ 40kΩ
1 49.4kΩ
25kΩ(1) G=1+
RG

6
RG A3 VO

8
25kΩ(1)

5
A2 Ref
+ 3 Over-Voltage
VIN 40kΩ 40kΩ
Protection

4
NOTE: (1) INA129: 24.7kΩ
V−

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments
semiconductor products and disclaimers thereto appears at the end of this data sheet.

All trademarks are the property of their respective owners.

 

       
 Copyright  1995−2005, Texas Instruments Incorporated
            

 !     !   

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SBOS051B − OCTOBER 1995 − REVISED FEBRUARY 2005

ABSOLUTE MAXIMUM RATINGS(1) ELECTROSTATIC DISCHARGE SENSITIVITY

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±18V This integrated circuit can be damaged by
Analog Input Voltage Range . . . . . . . . . . . . . . . . . . . . . . . . . . . ±40V ESD. Texas Instruments recommends that all
Output Short-Circuit (to ground) . . . . . . . . . . . . . . . . . . Continuous integrated circuits be handled with appropriate
Operating Temperature . . . . . . . . . . . . . . . . . . . −40°C to +125°C precautions. Failure to observe proper handling and
Storage Temperature Range . . . . . . . . . . . . . . . . . −55°C to +125°C installation procedures can cause damage.
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Lead Temperature (soldering, 10s) . . . . . . . . . . . . . . . . . . . . . +300°C ESD damage can range from subtle performance
(1) Stresses above these ratings may cause permanent damage. degradation to complete device failure. Precision
integrated circuits may be more susceptible to damage
Exposure to absolute maximum conditions for extended periods
because very small parametric changes could cause the
may degrade device reliability. These are stress ratings only, and
device not to meet its published specifications.
functional operation of the device at these or any other conditions
beyond those specified is not implied.

ORDERING INFORMATION
For the most current package and ordering information, see the Package Option Addendum located at the end of this data
sheet.

PIN CONFIGURATION

8-Pin DIP and SO-8

Top View

RG 1 8 RG

V −
IN 2 7 V+

V+IN 3 6 VO

V− 4 5 Ref

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SBOS051B − OCTOBER 1995 − REVISED FEBRUARY 2005

ELECTRICAL CHARACTERISTICS
At TA = +25°C, VS = ±15V, RL = 10kΩ, unless otherwise noted.
INA128P, U INA128PA, UA
INA129P. U INA129PA, UA
PARAMETER CONDITIONS MIN TYP MAX MIN TYP MAX UNIT
INPUT
Offset Voltage, RTI
Initial TA = +25°C ±10±100/G ±50±500/G ±25±100/G ±125±1000/G µV
vs Temperature TA = TMIN to TMAX ±0.2±2/G ±0.5±20/G ±0.2±5/G ±1±20/G µV/°C
vs Power Supply VS = ±2.25V to ±18V ±0.2±20/G ±1±100/G ∗ ±2±200/G µV/V
Long-Term Stability ±0.1±3/G ∗ µV/mo
Impedance, Differential 1010 || 2 ∗ Ω || pF
Common-Mode 1011 || 9 ∗ Ω || pF
Common-Mode Voltage Range(1) VO = 0V (V+) − 2 (V+) − 1.4 ∗ ∗ V
(V−) + 2 (V−) + 1.7 ∗ ∗ V
Safe Input Voltage ±40 ∗ V
Common-Mode Rejection VCM = ±13V, ∆RS = 1kΩ
G=1 80 86 73 ∗ dB
G = 10 100 106 93 ∗ dB
G = 100 120 125 110 ∗ dB
G = 1000 120 130 110 ∗ dB
BIAS CURRENT ±2 ±5 ∗ ±10 nA
vs Temperature ±30 ∗ pA/°C
Offset Current ±1 ±5 ∗ ±10 nA
vs Temperature ±30 ∗ pA/°C
NOISE VOLTAGE, RTI G = 1000, RS = 0Ω
f = 10Hz 10 ∗ nV/√Hz
f = 100Hz 8 ∗ nV/√Hz
f = 1kHz 8 ∗ nV/√Hz
fB = 0.1Hz to 10Hz 0.2 ∗ µVPP
Noise Current
f = 10Hz 0.9 ∗ pA/√Hz
f = 1kHz 0.3 ∗ pA/√Hz
fB = 0.1Hz to 10Hz 30 ∗ pAPP
GAIN
Gain Equation, INA128 1 + (50kΩ/RG) ∗ V/V
Gain Equation, INA129 1 + (49.4kΩ/RG) ∗ V/V
Range of Gain 1 10000 ∗ ∗ V/V
Gain Error G=1 ±0.01 ±0.024 ∗ ±0.1 %
G = 10 ±0.02 ±0.4 ∗ ±0.5 %
G = 100 ±0.05 ±0.5 ∗ ±0.7 %
G = 1000 ±0.5 ±1 ∗ ±2 %
Gain vs Temperature(2) G=1 ±1 ±10 ∗ ∗ ppm/°C
50kΩ (or 49.4kΩ) Resistance(2)(3) ±25 ±100 ∗ ∗ ppm/°C
Nonlinearity VO = ±13.6V, G = 1 ±0.0001 ±0.001 ∗ ±0.002 % of FSR
G = 10 ±0.0003 ±0.002 ∗ ±0.004 % of FSR
G = 100 ±0.0005 ±0.002 ∗ ±0.004 % of FSR
G = 1000 ±0.001 (4) ∗ ∗ % of FSR

NOTE: ∗ Specification is same as INA128P, U or INA129P, U.

(1) Input common-mode range varies with output voltage — see typical curves.
(2) Specified by wafer test.
(3) Temperature coefficient of the 50kΩ (or 49.4kΩ) term in the gain equation.
(4) Nonlinearity measurements in G = 1000 are dominated by noise. Typical nonlinearity is ±0.001%.

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SBOS051B − OCTOBER 1995 − REVISED FEBRUARY 2005

ELECTRICAL CHARACTERISTICS (continued)

At TA = +25°C, VS = ±15V, RL = 10kΩ, unless otherwise noted.
INA128P, U INA128PA, UA
INA129P. U INA129PA, UA
PARAMETER CONDITIONS MIN TYP MAX MIN TYP MAX UNIT
OUTPUT
Voltage: Positive RL = 10kΩ (V+) − 1.4 (V+) − 0.9 ∗ ∗ V
Voltage: Negative RL = 10kΩ (V−) + 1.4 (V−) + 0.8 ∗ ∗ V
Load Capacitance Stability 1000 ∗ pF
Short-Circuit Current +6/−15 ∗ mA
FREQUENCY RESPONSE
Bandwidth, −3dB G=1 1.3 ∗ MHz
G = 10 700 ∗ kHz
G = 100 200 ∗ kHz
G = 1000 20 ∗ kHz
Slew Rate VO = ±10V, G = 10 4 ∗ V/µs
Settling Time, 0.01% G=1 7 ∗ µs
G = 10 7 ∗ µs
G = 100 9 ∗ µs
G = 1000 80 ∗ µs
Overload Recovery 50% Overdrive 4 ∗ µs
POWER SUPPLY
Voltage Range ±2.25 ±15 ±18 ∗ ∗ ∗ V
Current, Total VIN = 0V ±700 ±750 ∗ ∗ µA
TEMPERATURE RANGE
Specification −40 +85 ∗ ∗ °C
Operating −40 +125 ∗ ∗ °C
qJA 8-Pin DIP 80 ∗ °C/W
SO-8 SOIC 150 ∗ °C/W

NOTE: ∗ Specification is same as INA128P, U or INA129P, U.

(1) Input common-mode range varies with output voltage — see typical curves.
(2) Specified by wafer test.
(3) Temperature coefficient of the 50kΩ (or 49.4kΩ) term in the gain equation.
(4) Nonlinearity measurements in G = 1000 are dominated by noise. Typical nonlinearity is ±0.001%.

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SBOS051B − OCTOBER 1995 − REVISED FEBRUARY 2005

TYPICAL CHARACTERISTICS
At TA = +25°C, VS = ±15V, unless otherwise noted.

GAIN vs FREQUENCY COMMON−MODE REJECTION vs FREQUENCY

60 140
G = 1000V/V
G = 1000V/V
G = 100V/V
50

Common−Mode Rejection (dB)

120
G = 10V/V
40
G = 100V/V 100
30 G = 1V/V
Gain (dB)

80
20
G = 10V/V 60
10
40
0
G = 1V/V
− 10 20

− 20 0
1k 10k 100k 1M 10M 10 100 1k 10k 100k 1M
Frequency (Hz) Frequency (Hz)

POSITIVE POWER SUPPLY REJECTION NEGATIVE POWER SUPPLY REJECTION

vs FREQUENCY vs FREQUENCY
140 140
G = 1000V/V
120 120
Power Supply Rejection (dB)

Power Supply Rejection (dB)

G = 1000V/V G = 100V/V
100 100
G = 100V/V
80 80

60 60 G = 10V/V
G = 10V/V
40 40 G = 1V/V
G = 1V/V
20 20

0 0
10 100 1k 10k 100k 1M 10 100 1k 10k 100k 1M
Frequency (Hz) Frequency (Hz)

INPUT COMMON−MODE RANGE INPUT COMMON−MODE RANGE

vs OUTPUT VOLTAGE, VS = ±15V vs OUTPUT VOLTAGE, VS = ±5V, ±2.5V
15 5
G ≥ 10 G ≥ 10
4 G ≥ 10 G ≥ 10
10
Common−Mode Voltage (V)

Common−Mode Voltage (V)

3
G=1 G=1 G=1 G=1
2
5 G ≥ 10
+15V 1
−
VD/2
0 + 0 G=1
− VO
VD/2 −1
+ + Ref
−5 VCM −2
− 15V
−3
−10 VS = ±5V
−4 VS = ±2.5V
−15 −5
−15 −10 −5 0 5 10 15 −5 −4 −3 −2 −1 0 1 2 3 4 5
Output Voltage (V) Output Voltage (V)

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SBOS051B − OCTOBER 1995 − REVISED FEBRUARY 2005

TYPICAL CHARACTERISTICS (continued)

At TA = +25°C, VS = ±15V, unless otherwise noted.

INPUT−REFERRED NOISE vs FREQUENCY SETTLING TIME vs GAIN

1k 100 100
Input-Referred Voltage Noise (nV/√Hz)

Input Bias Current Noise (pA/√Hz)

0.01%
G = 1V/V

Settling Time (m s)
100 10
0.1%
10
G = 10V/V
10 1
G = 100, 1000V/V

Current Noise

1 0.1 1
1 10 100 1k 10k 1 10 100 1000
Frequency (Hz) Gain (V/V)

QUIESCENT CURRENT and SLEW RATE

vs TEMPERATURE INPUT OVER−VOLTAGE V/I CHARACTERISTICS
0.85 6 5
4
0.8 5 3
Quiescent Current (µA)

Flat region represents

Input Current (mA)

2 normal linear operation.

Slew Rate (V/µs)

G = 1000V/V
0.75 4 1
G = 1V/V
Slew Rate 0
0.7 3 −1 +15V
G = 1V/V
−2
IQ
0.65 2 −3
G = 1000V/V VIN
−4 IIN −15V
06 1 −5
−75 −50 −25 0 25 50 75 100 125 −50 −40 −30 −20 −10 0 10 20 30 40 50
Temperature (°C) Input Voltage (V)

INPUT OFFSET VOLTAGE WARM−UP INPUT BIAS CURRENT vs TEMPERATURE

10 2

8
Offset Voltage Change (µV)

6
Input Bias Current (nA)

1
4
2 IOS
0 0

−2
IB
−4
−1
−6 Typical IB and IOS
Range ±2nA at 25°C
−8
−10 −2
0 100 200 300 400 500 −75 −50 −25 0 25 50 75 100 125
Time (µs) Temperature (°C)

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SBOS051B − OCTOBER 1995 − REVISED FEBRUARY 2005

TYPICAL CHARACTERISTICS (continued)

At TA = +25°C, VS = ±15V, unless otherwise noted.

OUTPUT VOLTAGE SWING OUTPUT VOLTAGE SWING

vs OUTPUT CURRENT vs POWER SUPPLY VOLTAGE
(V+) (V+)
(V+)−0.4 (V+)−0.4
+25°C +85°C

Output Voltage Swing (V)

(V+)−0.8 (V+)−0.8
Output Voltage (V)

(V+)−1.2 (V+)−1.2
−40°C
RL = 10kΩ
+25°C
(V−)+1.2 (V−)+1.2 −40°C
(V−)+0.8 +85°C
(V−)+0.8 +85°C
−40°C
(V−)+0.4 (V−)+0.4

(V−) (V−)
0 1 2 3 4 0 5 10 15 20
Output Current (mA) Power Supply Voltage (V)

SHORT−CIRCUIT OUTPUT CURRENT

MAXIMUM OUTPUT VOLTAGE vs FREQUENCY
vs TEMPERATURE
30
18 G = 10, 100
Peak−to−Peak Output Voltage (VPP)

16 −ISC 25 G=1
Short−Circuit Current (mA)

14 G = 1000
20
12

10 15
8
10
6
+ISC
4 5
2
0
0
1k 10k 100k 1M
−75 −50 −25 0 25 50 75 100 125
Frequency (Hz)
Temperature (°C)

TOTAL HARMONIC DISTORTION + NOISE

vs FREQUENCY
1
VO = 1Vrms G=1
500kHz Measurement RL = 10kΩ
Bandwidth

0.1 G = 100, RL = 100kΩ

THD + N (%)

0.01
G = 10V/V
G = 1, RL = 100kΩ
RL = 100kΩ
Dashed Portion
is noise limited.
0.001
100 1k 10k 100k
Frequency (Hz)

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SBOS051B − OCTOBER 1995 − REVISED FEBRUARY 2005

TYPICAL CHARACTERISTICS (continued)

At TA = +25°C, VS = ±15V, unless otherwise noted.

SMALL SIGNAL SMALL SIGNAL

(G = 1, 10) (G = 100, 1000)

G=1 G = 100

20mV/div 20mV/div

G = 10 G = 1000

5µs/div 20µs/div

LARGE SIGNAL LARGE SIGNAL

(G = 1, 10) (G = 100, 1000)

G=1 G = 100

5V/div 5V/div

G = 10 G = 1000

5µs/div 20µs/div

VOLTAGE NOISE 0.1 to 10Hz

INPUT−REFERRED, G ≥ 100

0.1µV/div

1s/div

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SBOS051B − OCTOBER 1995 − REVISED FEBRUARY 2005

APPLICATIONS INFORMATION resistors are laser trimmed to accurate absolute values.

The accuracy and temperature coefficient of these
Figure 1 shows the basic connections required for internal resistors are included in the gain accuracy and
operation of the INA128/INA129. Applications with noisy drift specifications of the INA128/INA129.
or high impedance power supplies may require The stability and temperature drift of the external gain
decoupling capacitors close to the device pins as shown. setting resistor, RG, also affects gain. RG’s contribution
The output is referred to the output reference (Ref) to gain accuracy and drift can be directly inferred from
terminal which is normally grounded. This must be a the gain equation (1). Low resistor values required for
low-impedance connection to assure good high gain can make wiring resistance important.
common-mode rejection. A resistance of 8Ω in series Sockets add to the wiring resistance which will
with the Ref pin will cause a typical device to degrade contribute additional gain error (possibly an unstable
to approximately 80dB CMR (G = 1). gain error) in gains of approximately 100 or greater.

SETTING THE GAIN DYNAMIC PERFORMANCE

Gain is set by connecting a single external resistor, RG, The typical performance curve Gain vs Frequency
connected between pins 1 and 8: shows that, despite its low quiescent current, the
INA128/INA129 achieves wide bandwidth, even at high
INA128:
gain. This is due to the current-feedback topology of the
G + 1) 50kW input stage circuitry. Settling time also remains
RG (1) excellent at high gain.
INA129:
G + 1) 49.4kW NOISE PERFORMANCE
RG (2)
The INA128/INA129 provides very low noise in most
Commonly used gains and resistor values are shown in applications. Low frequency noise is approximately
Figure 1. 0.2µVPP measured from 0.1 to 10Hz (G ≥ 100). This
The 50kΩ term in Equation 1 (49.4kΩ in Equation 2) provides dramatically improved noise when compared
comes from the sum of the two internal feedback to state-of-the-art chopper-stabilized amplifiers.
resistors of A1 and A2. These on-chip metal film
V+

INA128: INA129: 0.1µF

50kW 49.4kW
G + 1) G + 1) 7
RG RG
INA128, INA129
INA128 INA129 − 2 Over−Voltage
VIN
Protection
A1
DESIRED RG NEAREST RG NEAREST
GAIN (V/V) (Ω) 1% RG (Ω) (Ω) 1% RG (Ω) 40kΩ 40kΩ
1 −
1 NC NC NC NC
25kΩ(1) +
VO = G • (VIN − VIN )
2 50.00k 49.9k 49.4k 49.9k
6
5 12.50k 12.4k 12.35k 12.4k RG A3
10 5.556k 5.62k 5489 5.49k +
20 2.632k 2.61k 2600 2.61k 8
25kΩ(1) Load VO
50 1.02k 1.02k 1008 1k
100 505.1 511 499 499 −
200 251.3 249 248 249 5
A2
500 100.2 100 99 100 + 3 Over−Voltage Ref
VIN 40kΩ 40kΩ
1000 50.05 49.9 49.5 49.9 Protection
2000 25.01 24.9 24.7 24.9
5000 10.00 10 9.88 9.76
4 0.1µF
10000 5.001 4.99 4.94 4.87 NOTE: (1) INA129: 24.7kΩ
NC: No Connection
−
V IN
V−
Also drawn in simplified form: RG INA128 VO

+ Ref
V IN

Figure 1. Basic Connections

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SBOS051B − OCTOBER 1995 − REVISED FEBRUARY 2005

OFFSET TRIMMING
Microphone,
The INA128/INA129 is laser trimmed for low offset voltage Hydrophone INA128
and offset voltage drift. Most applications require no etc.
external offset adjustment. Figure 2 shows an optional
circuit for trimming the output offset voltage. The voltage 47kΩ 47kΩ
applied to Ref terminal is summed with the output. The op
amp buffer provides low impedance at the Ref terminal to
preserve good common-mode rejection.

V−
IN
V+ Thermocouple INA128
RG INA128 VO
100µA
+ Ref 1/2 REF200
VIN
10kΩ

10kΩ 100Ω
OPA177
±10mV
Adjustment Range
100Ω INA128

100µA
1/2 REF200 Center−tap provides
bias current return.
V−
Figure 3. Providing an Input Common-Mode
Figure 2. Optional Trimming of Output Offset Current Path
Voltage
INPUT COMMON-MODE RANGE
INPUT BIAS CURRENT RETURN PATH
The linear input voltage range of the input circuitry of the
The input impedance of the INA128/INA129 is INA128/INA129 is from approximately 1.4V below the
extremely high—approximately 1010Ω. However, a path positive supply voltage to 1.7V above the negative
must be provided for the input bias current of both supply. As a differential input voltage causes the output
inputs. This input bias current is approximately ±2nA. voltage increase, however, the linear input range will be
High input impedance means that this input bias current limited by the output voltage swing of amplifiers A1 and
changes very little with varying input voltage. A2. So the linear common-mode input range is related
Input circuitry must provide a path for this input bias to the output voltage of the complete amplifier. This
current for proper operation. Figure 3 shows various behavior also depends on supply voltage—see
provisions for an input bias current path. Without a bias performance curves, Input Common-Mode Range vs
current path, the inputs will float to a potential which Output Voltage.
exceeds the common-mode range, and the input Input-overload can produce an output voltage that
amplifiers will saturate. appears normal. For example, if an input overload
If the differential source resistance is low, the bias condition drives both input amplifiers to their positive
current return path can be connected to one input (see output swing limit, the difference voltage measured by
the thermocouple example in Figure 3). With higher the output amplifier will be near zero. The output of A3
source impedance, using two equal resistors provides will be near 0V even though both inputs are overloaded.
a balanced input with possible advantages of lower
input offset voltage due to bias current and better LOW VOLTAGE OPERATION
high-frequency common-mode rejection.
The INA128/INA129 can be operated on power supplies
as low as ±2.25V. Performance remains excellent with
power supplies ranging from ±2.25V to ±18V. Most
parameters vary only slightly throughout this supply
voltage range—see typical performance curves.

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SBOS051B − OCTOBER 1995 − REVISED FEBRUARY 2005

Operation at very low supply voltage requires careful

V+
attention to assure that the input voltages remain within
10.0V 6
their linear range. Voltage swing requirements of REF102 2
internal nodes limit the input common-mode range with
low power supply voltage. Typical performance curves, R1 R2

“Input Common-Mode Range vs Output Voltage” show 4

the range of linear operation for ±15V, ±5V, and ±2.5V
supplies. Pt100

Cu
K VO
+5V Cu RG INA128

2.5V − ∆V Ref
R3
100Ω = Pt100 at 0°C
RG INA128 VO
300Ω
Ref
2.5V + ∆V SEEBECK
ISA COEFFICIENT
TYPE MATERIAL (µV/5C) R1, R2
E + Chromel 58.5 66.5kΩ
− Constantan
J + Iron 50.2 76.8kΩ
− Constantan
Figure 4. Bridge Amplifier K + Chromel 39.4 97.6kΩ
− Alumel
T + Copper 38.0 102kΩ
− Constantan

− Figure 6. Thermocouple Amplifier with RTD

VO
VIN RG INA128 Cold-Junction Compensation
+
Ref R1
C1 V IN
1MΩ − R1 IO + @G
0.1µF R1
VIN RG INA128
+
Ref
1 IB
f−3dB=
OPA130 2πR1C1
= 1.59Hz A1 IO
A1 IB ERROR Load
OPA177 ± 1.5nA
OPA131 ± 50pA
Figure 5. AC-Coupled Instrumentation Amplifier OPA602 ± 1pA
OPA128 ± 75fA

Figure 7. Differential Voltage to Current Converter

RG = 5.6kΩ

2.8kΩ
G = 10
VO
LA RG/2 INA128
RA
Ref
2.8kΩ
390kΩ VG
VG 1/2
1/2 OPA2131 NOTE: Due to the INA128’s current-feedback
RL OPA2131 10kΩ topology, VG is approximately 0.7V less than
390kΩ the common-mode input voltage. This DC offset
in this guard potential is satisfactory for many
guarding applications.

Figure 8. ECG Amplifier with Right-Leg Drive

11
 PACKAGE OPTION ADDENDUM

www.ti.com 24-Jan-2013

PACKAGING INFORMATION

Orderable Device Status Package Type Package Pins Package Qty Eco Plan Lead/Ball Finish MSL Peak Temp Op Temp (°C) Top-Side Markings Samples
(1) Drawing (2) (3) (4)

INA128P ACTIVE PDIP P 8 50 Green (RoHS CU NIPDAU N / A for Pkg Type INA128P
& no Sb/Br)
INA128PA ACTIVE PDIP P 8 50 Green (RoHS CU NIPDAU N / A for Pkg Type INA128P
& no Sb/Br) A
INA128PAG4 ACTIVE PDIP P 8 50 Green (RoHS CU NIPDAU N / A for Pkg Type INA128P
& no Sb/Br) A
INA128PG4 ACTIVE PDIP P 8 50 Green (RoHS CU NIPDAU N / A for Pkg Type INA128P
& no Sb/Br)
INA128U ACTIVE SOIC D 8 75 Green (RoHS CU NIPDAU Level-3-260C-168 HR INA
& no Sb/Br) 128U
INA128U/2K5 ACTIVE SOIC D 8 2500 Green (RoHS CU NIPDAU Level-3-260C-168 HR INA
& no Sb/Br) 128U
INA128U/2K5G4 ACTIVE SOIC D 8 2500 Green (RoHS CU NIPDAU Level-3-260C-168 HR INA
& no Sb/Br) 128U
INA128UA ACTIVE SOIC D 8 75 Green (RoHS CU NIPDAU Level-3-260C-168 HR -40 to 125 INA
& no Sb/Br) 128U
A
INA128UA/2K5 ACTIVE SOIC D 8 2500 Green (RoHS CU NIPDAU Level-3-260C-168 HR -40 to 125 INA
& no Sb/Br) 128U
A
INA128UA/2K5E4 ACTIVE SOIC D 8 2500 Green (RoHS CU NIPDAU Level-3-260C-168 HR -40 to 125 INA
& no Sb/Br) 128U
A
INA128UA/2K5G4 ACTIVE SOIC D 8 2500 Green (RoHS CU NIPDAU Level-3-260C-168 HR -40 to 125 INA
& no Sb/Br) 128U
A
INA128UAE4 ACTIVE SOIC D 8 75 Green (RoHS CU NIPDAU Level-3-260C-168 HR -40 to 125 INA
& no Sb/Br) 128U
A
INA128UAG4 ACTIVE SOIC D 8 75 Green (RoHS CU NIPDAU Level-3-260C-168 HR -40 to 125 INA
& no Sb/Br) 128U
A
INA128UG4 ACTIVE SOIC D 8 75 Green (RoHS CU NIPDAU Level-3-260C-168 HR INA
& no Sb/Br) 128U

Addendum-Page 1
 PACKAGE OPTION ADDENDUM

www.ti.com 24-Jan-2013

Orderable Device Status Package Type Package Pins Package Qty Eco Plan Lead/Ball Finish MSL Peak Temp Op Temp (°C) Top-Side Markings Samples
(1) Drawing (2) (3) (4)

INA129P ACTIVE PDIP P 8 50 Green (RoHS CU NIPDAU N / A for Pkg Type INA129P
& no Sb/Br)
INA129PA ACTIVE PDIP P 8 50 Green (RoHS CU NIPDAU N / A for Pkg Type INA129P
& no Sb/Br) A
INA129PAG4 ACTIVE PDIP P 8 50 Green (RoHS CU NIPDAU N / A for Pkg Type INA129P
& no Sb/Br) A
INA129PG4 ACTIVE PDIP P 8 50 Green (RoHS CU NIPDAU N / A for Pkg Type INA129P
& no Sb/Br)
INA129U ACTIVE SOIC D 8 75 Green (RoHS CU NIPDAU Level-3-260C-168 HR INA
& no Sb/Br) 129U
INA129U/2K5 ACTIVE SOIC D 8 2500 Green (RoHS CU NIPDAU Level-3-260C-168 HR INA
& no Sb/Br) 129U
INA129U/2K5G4 ACTIVE SOIC D 8 2500 Green (RoHS CU NIPDAU Level-3-260C-168 HR INA
& no Sb/Br) 129U
INA129UA ACTIVE SOIC D 8 75 Green (RoHS CU NIPDAU Level-3-260C-168 HR -40 to 125 INA
& no Sb/Br) 129U
A
INA129UA/2K5 ACTIVE SOIC D 8 2500 Green (RoHS CU NIPDAU Level-3-260C-168 HR -40 to 125 INA
& no Sb/Br) 129U
A
INA129UA/2K5E4 ACTIVE SOIC D 8 2500 Green (RoHS CU NIPDAU Level-3-260C-168 HR -40 to 125 INA
& no Sb/Br) 129U
A
INA129UA/2K5G4 ACTIVE SOIC D 8 2500 Green (RoHS CU NIPDAU Level-3-260C-168 HR -40 to 125 INA
& no Sb/Br) 129U
A
INA129UAE4 ACTIVE SOIC D 8 75 Green (RoHS CU NIPDAU Level-3-260C-168 HR -40 to 125 INA
& no Sb/Br) 129U
A
INA129UG4 ACTIVE SOIC D 8 75 Green (RoHS CU NIPDAU Level-3-260C-168 HR INA
& no Sb/Br) 129U
SN412014DRE4 ACTIVE SOIC D 8 2500 Green (RoHS CU NIPDAU Level-3-260C-168 HR -40 to 125 INA
& no Sb/Br) 128U
A

(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.

Addendum-Page 2
 PACKAGE OPTION ADDENDUM

www.ti.com 24-Jan-2013

NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.

(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)

(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.

(4)
Only one of markings shown within the brackets will appear on the physical device.

Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.

In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.

OTHER QUALIFIED VERSIONS OF INA128, INA129 :

• Enhanced Product: INA129-EP

NOTE: Qualified Version Definitions:

• Enhanced Product - Supports Defense, Aerospace and Medical Applications

Addendum-Page 3
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