Name: Muhammad Usama Reg: 796-FET/BSME/F18 Assignment Week 10 Course Title: Electronics Engineering (Ee-201)
Name: Muhammad Usama Reg: 796-FET/BSME/F18 Assignment Week 10 Course Title: Electronics Engineering (Ee-201)
Name: Muhammad Usama Reg: 796-FET/BSME/F18 Assignment Week 10 Course Title: Electronics Engineering (Ee-201)
REG: 796-FET\BSME\F18
Assignment Week 10
Working:
It operates on the principle of Photoelectric effect. As it changes light signal incidenting on its
surface into its electrical equivalent form. And the transistor action permits it to perform
amplification of the current flowing through it. Its working is almost similar to a normal
transistor, however; the variation lies in the input current that drives the circuit. And in the case
of a phototransistor, the incident light generates driving current.
In the circuit arrangement, we can clearly see that the base region is kept unconnected with the
external supply voltage and is used as the region for radiation incidence.
Only the collector region is connected to the positive side of the supply provided along with
emitter which is connected to the negative side. However, the output is taken at the emitter
terminal of the transistor.
When no any light is allowed to incident at the base region of the transistor, the due to
temperature variation, movement of minority carriers across the junction generates a very small
current through the transistor which is reverse saturation current basically termed as dark current.
Here, the base current IB is majorly 0.
Here, in this case, the output current will be less as compared to supply provided.
But, when a certain amount of light energy is allowed to fall at the base of the transistor, then
electron and hole pair gets generated. The applied electric field causes the electrons to move into
the emitter region, thereby generating large electric current.
So
IC=βDC Iλ
As an intensity of light Iλ on base increases collector current also increases so collector current
depends on intensity of light.
]
Phototransistor Circuit:
A phototransistor works just like a normal transistor, where the base current is multiplied to give
the collector current, except that in a phototransistor, the base current is controlled by the amount
of visible or infrared light where the device only needs 2 pins.
Characteristics:
As phototransistors are basically Bipolar NPN Transistors with large base – collector junction,
the characteristics of a Phototransistor are similar to that of a simple BJT.
Phototransistors are available as two-leaded or three-leaded devices. In a two-leaded
Phototransistor, the Base terminal electrically unavailable and the device is completely
dependent on light.
Collector terminal is usually at a higher potential than Emitter to induce reverse bias at base –
collector junction. When there is no light falling on the phototransistor, a small amount of
leakage current known as Dark Current flows from collector to emitter.
When there is enough light falling on the base terminal, a base current is produced, which is
proportional to the intensity of the light.
The base current will then trigger the amplification process and a collector current with high gain
flows. The following image shows the collector current characteristics curve.
From the above curve, it is clear that as the intensity of the light increases, the collector current
also increases.
As mentioned earlier, phototransistors are also available as three-terminal devices. In this case,
the usage of Base terminal is optional. When used, it acts as a regular BJT and when not used, it
acts as a Phototransistor.