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    KIA KIA KIA: 1.description

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    OscarVargas
    The document describes the KIA10N60H N-Channel MOSFET, which is designed for high voltage, high speed power switching applications. It has an RDS(on) of 0.6 ohms, low gate charge of 44nC, and fast switching capability. The MOSFET has a maximum drain-source voltage of 600V, continuous drain current of 9.5A, and pulsed drain current of 38A. It provides low on-resistance and fast switching speeds making it suitable for applications such as switched mode power supplies.

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    KIA KIA KIA: 1.description

    Uploaded by

    OscarVargas
    100 views5 pages
    The document describes the KIA10N60H N-Channel MOSFET, which is designed for high voltage, high speed power switching applications. It has an RDS(on) of 0.6 ohms, low gate charge of 44nC, and fast switching capability. The MOSFET has a maximum drain-source voltage of 600V, continuous drain current of 9.5A, and pulsed drain current of 38A. It provides low on-resistance and fast switching speeds making it suitable for applications such as switched mode power supplies.

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    mosfet 10n60

    Original Title

    10n60

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    The document describes the KIA10N60H N-Channel MOSFET, which is designed for high voltage, high speed power switching applications. It has an RDS(on) of 0.6 ohms, low gate charge of 44nC, and fast switching capability. The MOSFET has a maximum drain-source voltage of 600V, continuous drain current of 9.5A, and pulsed drain current of 38A. It provides low on-resistance and fast switching speeds making it suitable for applications such as switched mode power supplies.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    100 views5 pages

    KIA KIA KIA: 1.description

    Uploaded by

    OscarVargas
    The document describes the KIA10N60H N-Channel MOSFET, which is designed for high voltage, high speed power switching applications. It has an RDS(on) of 0.6 ohms, low gate charge of 44nC, and fast switching capability. The MOSFET has a maximum drain-source voltage of 600V, continuous drain current of 9.5A, and pulsed drain current of 38A. It provides low on-resistance and fast switching speeds making it suitable for applications such as switched mode power supplies.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 5

    9.

    5A，600V
    KIA
    SEMICONDUCTORS
    N-CHANNEL MOSFET 10N60H

    1.Description
    The KIA10N60H N-Channel enhancement mode silicon gate power MOSFET is designed
    for high voltage, high speed power switching applications such as high efficiency switched mode power
    supplies, active power factor correction,electronic lamp ballasts based on half bridge to pology.

    2. Features

    n RDS(on)=0.6Ω @ VGS=10V
    n Low gate charge ( typical 44nC)
    n Fast switching capability
    n avalanche energy specified
    n Improved dv/dt capability

    3. Pin configuration

    Pin Function

    1 Gate

    2 Drain

    3 Source

    1 of 5 Rev 1.1 JAN 2014


    9.5A，600V
    KIA
    SEMICONDUCTORS
    N-CHANNEL MOSFET 10N60H

    4. Absolute maximum ratings

    (TC= 25 ºC , unless otherwise specified)


    Parameter Symbol Rating Units
    Drain-source voltage VDSS 600 V
    Gate-source voltage VGSS +30 V
    TC=25ºC 9.5* A
    Drain current continuous ID
    TC=100ºC 5.7* A
    Drain current pulsed (note1) IDP 38.0* A
    Repetitive (note1) EAR 15.6 mJ
    Avalanche energy
    Single pulse (note2) EAS 700 mJ
    Peak diode recovery dv/dt (note3) dv/dt 4.5 V/ns
    TC=25 ºC 50 W
    Total power dissipation PD
    derate above 25 ºC 0.4 W/ºC
    Junction temperature TJ +150 ºC
    Storage temperature TSTG -55~+150 ºC
    * Drain current limited by maximum junction temperature.

    5. Thermal characteristics

    Parameter Symbol Rating Unit


    Thermal resistance,Junction-ambient RthJA 62.5 ºC/W
    Thermal resistance,case-to-sink typ. RthCS - ºC/W
    Thermal resistance,Junction-case RthJC 2.5 ºC/W

    2 of 5 Rev 1.1 JAN 2014


    9.5A，600V
    KIA
    SEMICONDUCTORS
    N-CHANNEL MOSFET 10N60H

    6. Electrical characteristics
    (TJ=25°C,unless otherwise notes)
    Parameter Symbol Conditions Min Typ Max Unit
    Off characteristics
    Drain-source breakdown voltage BVDSS VGS=0V,ID=250μA 600 - - V
    VDS=600V ,VGS=0V - - 1 μA
    Zero gate voltage drain current IDSS
    VDS=480V ,TC=125 ºC - - 10 μA
    Forward VGS=30V,VDS=0V - - 100 nA
    Gate-body leakage current IGSS
    Reverse VGS=-30V,VDS=0V - - -100 nA
    Breakdown voltage temperature coefficient △BVDSS/△TJ ID=250μA - 0.7 - V/°C
    On characteristics
    Gate threshold voltage VGS(th) VDS=VGS, ID=250μA 2.0 - 4.0 V
    Static drain-source on-resistance RDS(on) VDS=10V,ID=4.75A - 0.6 0.73 Ω
    Dynamic characteristics
    Input capacitance Ciss - 1570 2040 pF
    VDS=25V,VGS=0V,
    Output capacitance Coss - 166 215 pF
    f=1MHz
    Reverse transfer capacitance Crss - 18 24 pF
    Switching characteristics
    Turn-on delay time td(on) - 23 55 ns
    Rise time tr VDD=300V,I D=9.5A, - 69 150 ns
    Turn-off delay time td(off) RG=25Ω (note4,5) - 144 300 ns
    Fall time tf - 77 165 ns
    Total gate charge Qg - 44 57 nC
    VDS=480V,ID=9.5A ,
    Gate-source charge Qgs - 6.7 - nC
    VGS=10V (note4,5)
    Gate-drain charge Qgd - 18.5 - nC
    Drain-source diode characteristics
    Drain-source diode forward voltage VSD VGS=0V,ISD=9.5A - - 1.4 V
    Continuous drain-source current ISD - - 9.5 A
    Pulsed drain-source current ISM - - 38.0 A
    Reverse recovery time trr ISD=9.5A - 420 - ns
    dlSD/dt=100A/μs
    Reverse recovery charge Qrr (note4) - 4.2 - μC

    Note:1.repetitive rating:pulse width limited by maximum junctio/n temperature


    2.L=14.2mH,IAS=9.5A,VDD=50V,RG=25Ω,staring TJ=25ºC
    3.ISD<9.5A,di/dt<200A/μs,VDD<BVDSS,staring TJ=25 ºC
    4.Pulse test:pulse width<300μs,duty cycle<2%
    5.Essentially independent of operating temperature

    3 of 5 Rev 1.1 JAN 2014


    9.5A，600V
    KIA
    SEMICONDUCTORS
    N-CHANNEL MOSFET 10N60H

    7.Test circuits and waveforms

    4 of 5 Rev 1.1 JAN 2014


    9.5A，600V
    KIA
    SEMICONDUCTORS
    N-CHANNEL MOSFET 10N60H

    5 of 5 Rev 1.1 JAN 2014

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