Scribd Logo
Upload

Welcome to Scribd!

  • 26 views

    Switching Regulator Applications: Absolute Maximum Ratings

    Uploaded by

    Valdir Koxinhapr
    This document provides specifications for the Toshiba 2SK3561 N-channel MOSFET transistor. Key specifications include: 1. It has a low drain-source ON resistance of 0.75 ohms and high forward transfer admittance of 6.5 Siemens. 2. Absolute maximum ratings include a drain-source voltage of 500V, drain current of 8A continuous or 32A pulse. 3. Electrical characteristics include a gate threshold voltage of 2.0-4.0V and total gate charge of 28nC.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    Switching Regulator Applications: Absolute Maximum Ratings

    Uploaded by

    Valdir Koxinhapr
    26 views2 pages
    This document provides specifications for the Toshiba 2SK3561 N-channel MOSFET transistor. Key specifications include: 1. It has a low drain-source ON resistance of 0.75 ohms and high forward transfer admittance of 6.5 Siemens. 2. Absolute maximum ratings include a drain-source voltage of 500V, drain current of 8A continuous or 32A pulse. 3. Electrical characteristics include a gate threshold voltage of 2.0-4.0V and total gate charge of 28nC.

    Original Title

    Transistor 2SK3561

    Copyright

    © © All Rights Reserved

    Available Formats

    PDF, TXT or read online from Scribd

    Did you find this document useful?

    Is this content inappropriate?

    This document provides specifications for the Toshiba 2SK3561 N-channel MOSFET transistor. Key specifications include: 1. It has a low drain-source ON resistance of 0.75 ohms and high forward transfer admittance of 6.5 Siemens. 2. Absolute maximum ratings include a drain-source voltage of 500V, drain current of 8A continuous or 32A pulse. 3. Electrical characteristics include a gate threshold voltage of 2.0-4.0V and total gate charge of 28nC.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    26 views2 pages

    Switching Regulator Applications: Absolute Maximum Ratings

    Uploaded by

    Valdir Koxinhapr
    This document provides specifications for the Toshiba 2SK3561 N-channel MOSFET transistor. Key specifications include: 1. It has a low drain-source ON resistance of 0.75 ohms and high forward transfer admittance of 6.5 Siemens. 2. Absolute maximum ratings include a drain-source voltage of 500V, drain current of 8A continuous or 32A pulse. 3. Electrical characteristics include a gate threshold voltage of 2.0-4.0V and total gate charge of 28nC.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 2

    2SK3561

    TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)

    2SK3561
    Switching Regulator Applications
    Unit: mm

    • Low drain-source ON resistance: RDS (ON) = 0.75Ω (typ.)


    • High forward transfer admittance: |Yfs| = 6.5S (typ.)
    • Low leakage current: IDSS = 100 μA (VDS = 500 V)
    • Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)

    Absolute Maximum Ratings (Ta = 25°C)

    Characteristics Symbol Rating Unit

    Drain-source voltage VDSS 500 V


    Drain-gate voltage (RGS = 20 kΩ) VDGR 500 V
    Gate-source voltage VGSS ±30 V
    DC (Note 1) ID 8
    1: Gate
    Drain current Pulse (t = 1 ms) A 2: Drain
    IDP 32 3: Source
    (Note 1)
    Drain power dissipation (Tc = 25°C) PD 40 W
    Single pulse avalanche energy
    EAS 312 mJ JEDEC ―
    (Note 2)
    Avalanche current IAR 8 A JEITA SC-67
    Repetitive avalanche energy (Note 3) EAR 4 mJ TOSHIBA 2-10U1B
    Channel temperature Tch 150 °C Weight : 1.7 g (typ.)
    Storage temperature range Tstg -55~150 °C

    Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
    temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
    operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
    reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
    Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

    Thermal Characteristics
    2
    Characteristics Symbol Max Unit

    Thermal resistance, channel to case Rth (ch-c) 3.125 °C/W


    Thermal resistance, channel to ambient Rth (ch-a) 62.5 °C/W

    Note 1: Ensure that the channel temperature does not exceed 150℃. 1

    Note 2: VDD = 90 V, Tch = 25°C(initial), L = 8.3 mH, IAR = 8 A, RG = 25 Ω


    Note 3: Repetitive rating: pulse width limited by maximum channel temperature

    This transistor is an electrostatic-sensitive device. Please handle with caution. 3

    1
    2SK3561
    Electrical Characteristics (Ta = 25°C)

    Characteristics Symbol Test Condition Min Typ. Max Unit

    Gate leakage current IGSS VGS = ±25 V, VDS = 0 V ⎯ ⎯ ±10 µA


    Gate-source breakdown voltage V (BR) GSS IG = ±10 µA, VDS = 0 V ±30 ⎯ ⎯ V
    Drain cut-off current IDSS VDS = 500 V, VGS = 0 V ⎯ ⎯ 100 µA
    Drain-source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 500 ⎯ ⎯ V
    Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 2.0 ⎯ 4.0 V
    Drain-source ON resistance RDS (ON) VGS = 10 V, ID = 4 A ⎯ 0.75 0.85 Ω
    Forward transfer admittance ⎪Yfs⎪ VDS = 10 V, ID = 4 A 3.0 6.5 ⎯ S
    Input capacitance Ciss ⎯ 1050 ⎯
    Reverse transfer capacitance Crss VDS = 25 V, VGS = 0 V, f = 1 MHz ⎯ 10 ⎯ pF

    Output capacitance Coss ⎯ 110 ⎯


    10 V ID = 4 A VOUT
    Rise time tr VGS ⎯ 26 ⎯
    0V
    Turn-on time ton RL = ⎯ 45 ⎯
    50 Ω
    Switching time 50 Ω ns
    Fall time tf ⎯ 38 ⎯
    VDD ∼
    − 200 V

    Turn-off time toff Duty <


    = 1%, tw = 10 µs ⎯ 130 ⎯

    Total gate charge Qg ⎯ 28 ⎯


    Gate-source charge Qgs VDD ∼
    − 400 V, VGS = 10 V, ID = 8 A ⎯ 16 ⎯ nC

    Gate-drain charge Qgd ⎯ 12 ⎯

    Source-Drain Ratings and Characteristics (Ta = 25°C)

    Characteristics Symbol Test Condition Min Typ. Max Unit

    Continuous drain reverse current


    IDR ⎯ ⎯ ⎯ 8 A
    (Note 1)
    Pulse drain reverse current (Note 1) IDRP ⎯ ⎯ ⎯ 32 A
    Forward voltage (diode) VDSF IDR = 8 A, VGS = 0 V ⎯ ⎯ −1.7 V
    Reverse recovery time trr IDR = 8 A, VGS = 0 V, ⎯ 1200 ⎯ ns
    Reverse recovery charge Qrr dIDR/dt = 100 A/µs ⎯ 10 ⎯ µC

    Marking

    K3561 Part No. (or abbreviation code)


    Lot No.

    A line indicates
    lead (Pb)-free package or
    lead (Pb)-free finish.

    You might also like