इंटरनेट मानक

Disclosure to Promote the Right To Information

Whereas the Parliament of India has set out to provide a practical regime of right to
information for citizens to secure access to information under the control of public authorities,
in order to promote transparency and accountability in the working of every public authority,
and whereas the attached publication of the Bureau of Indian Standards is of particular interest
to the public, particularly disadvantaged communities and those engaged in the pursuit of
education and knowledge, the attached public safety standard is made available to promote the
timely dissemination of this information in an accurate manner to the public.

“जान1 का अ+धकार, जी1 का अ+धकार” “प0रा1 को छोड न' 5 तरफ”

Mazdoor Kisan Shakti Sangathan Jawaharlal Nehru
“The Right to Information, The Right to Live” “Step Out From the Old to the New”

IS 2032-8 (1965): Graphical symbols used in

electrotechnology, Part 8: Semiconductor devices [LITD 5:
Semiconductor and Other Electronic Components and Devices]

“!ान $ एक न' भारत का +नम-ण”

Satyanarayan Gangaram Pitroda
“Invent a New India Using Knowledge”

“!ान एक ऐसा खजाना > जो कभी च0राया नहB जा सकता ह”

है”
ह
Bhartṛhari—Nītiśatakam
“Knowledge is such a treasure which cannot be stolen”
( Reaffirmed 2001 )
 IS : 2032 ( Part VIII) - 1965

Indian Standard
GRAPHICAL SYMBOLS USED IN
ELECTROTECHNOLOGY
PART VIII SEMICONDUCTOR DEVICES

Electrotechnical Standards Sectional Committee, ETDC 1

Chairman Representing
SHBI K. P. S. NAIR Central Water 82 Power Commission ( Power Wing)

Members
Saar S. N. VINZE ( Alttrnate to
Shri K. P. S. Nair )
ADDITIONAL CHIEF ENGINEER Directorate General of Posts & Telegraphs ( Ministry
of Transport & Communications )
DIR&TOP. OF TELEQR~PHS
(L) ( Alternate )
Paos D. J. BADKAS . Indian
.I Institute of Science, Bangalore
DR H. V. GOPALAKRISHNA (Alternate )
SHRI G. C. BHATTACHARYA Heavy Electricals ( India ) Ltd, Bhopal
SHRI B. S. BHA~OWALIA ( Alternata )
SHEI V. W. CHEMBURKAR Indian EIectrical Manufacturers’ Association,
Calcutta
S~sr C. G. W. OVERTON (Alternate)
SH~I P. N. DEOBHAKTA Electrical Appliances and Accessories Sectional
Committee, ETDC 7, IS1
DIRECTOR Electronics and Radar Development Establishment
( Ministry of Defence ), Bangalore
SHRI G. D. JOOLEKAR Primary Cells and Batteries Sectional Committee,
ETDC 10, ISI; and Secondary Cells and Batte-
ries Sectional Committee, ETDC 1 I, IS1
SHRI S. N. MUKERJI National Test House, Calcutta
SRRI U. K. PATWARDHAN Transformers Sectional Committee, ETDC 16, IS1
SERI R. RADHAKRISRNAN Central Electra-Chemical Research Institute
( CSIR ), Karaikudi
SERI H. N. VENKOBARAO ( Alternate )
SERI A. R. NARAYANA RAO Institution of Engineers ( India), Calcutta
SHR~ V. V. RAO Department of Posts & Telegraphs, Wireless Plan-
ning and Co-ordination Wing
Sgzt~ U. S. SAVAKOOR Inspection Wing, Directorate General of Supplies
and Disposals, Department of Supply
SH~I A. S. NA~AUKATTI ( Alternate )
SRRI S. SWAYAXBTJ Switchgear and Controlgear Sectibnal Committee,
ETDC 17, IS1
SERI R. K. TANDAN National Physxal Laboratory ( CSIR), New Delhi
( Continued on pug# 2 )

INDIAN STANDARDS INSTITUTION

MANAK BHAVAN, 9 BAIiAKWR SHAH ZAFAR MARG
NEW DELHI
IS:2032(PartVIII)-1965

Members Rc/mwnting
SH~I S. THIXUVENXATAOEIABI Electronic Equipment Sectional Committee,
ETDC 24, IS1
SERB.V. VENUQOPALAN Insulators and Accessories Sectional Committee,
ETDC 3, ISI; and Conductors and Cables
Sectional Committee! ETDC 32, ISI
SHRI J. S. ZAVEFU RotaIt Machinery SectIonal Committee, ETDC 15,

@XI Y. S. VENKATESWARAN, Director, IS1 ( Ex-o&u Member)

Deputy Director (Electrotech-
nical ) ( Sucr.&ry )

Semiconductor Devices ,Sectional Committee, ETDC 40

Chairman
I)B B. H. WADIA Semiconductors Ltd, Poona

Members
DB K. S. BALAIN Centra;a:lectronics Engineering Research Institute,

Da P. R. DASTIDAR Atomic Energy Establishment, Trombay, Bombay

S~sr M. M. FAROOQUI ( Alternate 1
SHRI B. P. CHOSE gational Test House Calcutta
Wo CDXZG: S. MALHAN Directorate of Tech&al Development & Production
( Air ) ( Ministry of Defence )
SHRI A. V. RAJU ( Alternate )
COL M. L. MIDHA Director General of Inspection, Chief Inspectorate of
Electronics ( Ministry of Defence )
SH~I K. N. TIWARI ( Alternute)
SHRI K. C. RAMADOSS Directorate General of Posts & Telegraphs ( Ministry
of Transport & Communications )
DR RAM P~ASAD National Physical Laboratory ( CSIR ), New Delhi
SERI S. P. SURI ( Altcmate)
SXRI K. R. SAVOOR Bharat Electronics Ltd, Bangalore
SHRI C. G. SUBRAMANYAN Controller General of ,Research and Development
( Ministry of Defence )
SHBI B. BALABAMASWAMY( Alterno& )
SHBI S. VENKATABA~AN Radio Manufacturers’ Association of India ( RMAI ),
Calcutta
SHRI A. K. GOPALAKXISH-
NAN (Alternate )
SHRI Y. S. VENIATESWABAN, Director, IS1 ( Ex-o&o Member)
Deputy Director ( Electrotech-
nical )
Sccretarics
SEXI S. SBINIVASAN
Deputy Director, ISI.

SFIIU N. SXUNIVASAN
Assistant Director ( Electrotechnical), IS1

2
 IS:2032(Putvm)-1965

Indian Standard
GRAPHICAL SYMBOLS USED IN
ELECTROTECHNOLOGY
PART VIII SEMICONDUCTOR DEVICES

0. FOREWORD
0.1 This Indian Standard ( Part VIII ) was ado ted by the Indian
Standards Institution on 27 April 1965, after the c!raft finalized by the
Electrotechnical Standards Sectional Committee in consultation with the
Semiconductor Devices Sectional Committee had been approved by the
Electrotechnical Division Council.
0.2 It is common in electrical and electronic engineering practice to
employ graphical symbols to denote the various means and devices used
when making diagrams of connections. The connecting devices and the
points where they make contact with the apparatus may be indicated in
tht diagram. With the object of standardizing the symbols to meet the
various needs of the electrical and electronic industry based, as far as
possible, on symbols internationally agreed, a series of standards is being
formulated.
0.3 In selecting and devising these symbols the object has been to ensure,
as far as possible, that they are self-explanatory, easy to draw and in
general use. It may be necessary in detailed diagrams to indicate the
physical structure of the apparatus, the actual position of the terminals
and so forth, but, where possible, the principle of the standard symbols
should be followed.
0.4 It may be possible that for the devices specified in this standard other
symbols are used in this country. However, with the view to unification
in the use of these symbols, only one symbol based on the internationally
agreed symbols for each of the devices has been specified.
0.6 Sieparate standards for graphical symbols used in different departments
of electrotechnology are being prepared. This part is eighth in this series;
other parts are:
IS : 2032 ( Part I )-I962 Graphical symbols used in electrotechnology :
Part I Classification and definitions of diagrams and charts
IS : 2932 ( Part II )-I962 Graphical symbols used in electrotechno-
logy : Part II Kind of current distribution systems and methods
of connection
IS : 2032 ( Part III )-1962 Graphical symbols used in electrotechno-
logy : Part III Circuit elements and variability

3
IS : 2032 ( Part VIII ) - 1965

IS : 2032 (Part IV )-I964 Graphical symbols used in electrotechno-

logy : Part IV Rotating machines and transformers
IS : 2032 ( Part V )-I965 Graphical symbols used in electrotechno-
logy : Part V Generating stations and substations
IS : 2032 ( Part VI )-1965 Graphical symbols used in electrotechno-
logy : Part VI Motor starters
IS : 2032 ( Part VII )- 1965 Graphical symbols used ;n electrotechno-
logy : Part VII Switchgear and auxiliaries
ij.6 The development of an agreed system of graphical symbols for semi-
conductor devices has been receiving the ,attention of the International
Electrotechnical Commission (IEC) and this draft follows closely the
symbols recommended in IEC 3 ( Central Office ) 456 ‘ Draft symbols for
semiconductor devices ‘. Besides the series of symbols for complete devices,
the standard also includes a list of symbol elements and basic rules for
the use of the symbols. Symbols for use in block diagrams are under
consideration.
0.7 This standard is one of a series of Indian Standards now being pre-
pared to cover transistors, diodes, and other semiconductor devices which
are being manufactured and widely used in the cpuntry. The other
standard, so far published, in. this series is:
IS : 1885 ( Part VII )-1965 Electrotechnical vocabulary : Part VII
Semi-conductor devices

1., SCOPE
1.1 This standard ( Part VIII ) covers the graphical symbols for semi-
conductor devices.

2. SYMBOL ELEMENTS

0
2.1 Envelope
NOTE 1 -If necessary, the envelope
symbols may be split in the case of mul-
tiple devices withm the same envelope.
NOTE 2 - I,f the envelope is’ ,used as a
screen, the connections to it sh&dd be
shown as a dot on the envelope ( see 4.2 ). 0
If a separate screen connection 4s used
this should be indicated in the following
manner:

C3

4
 IS:2932(PartVIII)-1965

2.2 Semiconductor Region

2.3 Semiconductor Region with

One Ohmic Connection - As
shown, the thick Line is the semicon-
ductor region and the thin line drawn
at right angle is the ohmic connec-
tion.

2.3.1 Semiconductor region with

several ohmic connections.
++
Examples with two ohmic con-
nections.

2.4 Rectifying Junction or JUPC-

tion which Influences a Deple-
tion Layer

2.4.1 P region on N region.

2.4.2 .N region on P region.

NOTE -The arrow is always per-

penci‘cular to the semiconductor region
in this case.

2.5 Emitter on a Region of Dis-

similar Conductivity Type - The
slanting line with arrow represents
the emitter as intended for normal
use.

2.5.1 P emitter on N region.

2.5.2 Several P emitters on JV

region.

2.5.3 N emitter on P region.

2.5.4 Several N emitters on P

region.

5
 IS : 2032( Part VIII ) - 1965

2.6 Collector on a Region ef I%-

similar Conductivity Type-The
slanting line represents the collector
as intended for normal use.
2.6.1 Several collectors on a
region of dissimilar conductivity
type-

2.7 Transition Between Regions

of Dissimilar Conductivity
Types either P to N, or N to P -.
The short slanting line without
external connection indicates the
point of change along the horizontal
line from P to N or from N to P.
No ohmic connection shall be made
to the short slanting line.
2.8 Intrinsic Region Between
Two Regions - The intrinsic
region ( Z region ) lies between the
. linked slanting lines. Any ohmic
connection to the Z region shall be
made between the short slanting
lines and not to them.

2.8.1 Between regions of dls-

similar conductivity types giving
either a, PIN or a NIP structure.

2.8.2 Between regions of similar

conductivity types giving either a
PIP or a NIN structure.

2.8.3 Between a collector and. a

region of dissimilar conductivity
types giving either a PIN or a NZF
structure. The connection to the
collector is made to the long slanting
line.

2.8.4 Between a coIlector and a

region of similar conductivity types
giving either a PIP or a NZN
structure. The connection to the
collector is made to the long slanting
line.
1

6
 rsr2932(Putvm)-1965

2.9 Symbols for SpecialPuac-

tions - If necessary, a special func-
tion or property essential for circuit
operation may be indicated by a
supplementary symbol placed adja-
cent to or forming part of the symbol
for the devices. For such devices
an envelope shall always be used.
Examples of supplementary symbols
are given in 2.9.1 to 2.9.6.
2.9.1 Magnetic field dependence.
x
2.9.2 Light dependence.

2.9.3 Temperature dependence.

\\ 0
t
2.9.4 Capacitive device.
I

c -r
2.9.5 Tunnelling device.

[
2.9.6 Breakdown device.

3. GUIDE FOR APPLYING THE SYSTEM OF SYMBOLS

3.1 In general, the angli at which an external connection is brought to a

symbol element has no significance.
3.2 The envelope symbol may be omitted if no confusion would arise and
if; none of the elements of the device is connected to the envelope when it
is used as a screen ( see also 2.9 ).
3.3 Where the envelope symbol is used, the leadr available for external
connection should be indicated by lines coming out of the envelope.
3.4 Orientation of the symbol including a mirror-image presentatioo, doa
not change the meaning of a symbol.
3.5 The extensions at the ends of the horizontal line representing the
semiconductor region(s) beyond an emitter, a eolleetor or an ohmic con-
nection have no particular significance,
ISr2032(PartVrlI)-1965
.
3.6 The elements of the symbol shall be drawn in such an order as to show
clearly the operating function of the device.
3.7 To draw the symbol of a semiconductor dev:ce, start at an electrode
whose polarity is known ( usually an emitter ) and proceed along the
device, showing all of its reions individually. ’ Finally, indicate ohmic
connections wh>re required. ‘_

&a!#=
4 PN diode.

b) PNP transistor.

4 PNPNIIVIP Transistor in-

cluding 2 P-type emitters,
6 ohmic connections and 1
collector, each emitter
being located between 2
ohmic connections.
Nom -The lettm arc notpart of the
Symbol.

4. SYMBOLS FOR COMPLETE

SEMlCONDUCTOR DEVICES
4.1 PNP tram&or.

4.2 NPN transistor with coll&or

43.
connectedto the envelope.

q
 IS:2032( Part VJIJ ) - 1965

4.3 NPN transistor with transverse

biased base.

4.4 P.NIPtransistor

4.5 PJ?ZP transistor with ohmic

connection to the intrinsic region.

4.6 PAIN transistor with ohmic

connection to the intrinsic region.

4.7 Unijunction transistor with

N-type base.

4.8 Unijunction transistor with

PItype base.

4.9 Field-effect transistor with

N-type base.

4.10 Field-effect trcnsistor with

P-tVDe base.
ISr2032(PutVllI)-1%5

4.11 Semiconductor triode, PNP&

type switch.

4.12 Semiconductor triode, NPNP-

type switch.

4.13 Semiconductor diode, PNPN-

type tih.

4.14 Semiconductor rectifier diode.

*4.15 Semiconductor controlled

rectifier, general symbol.

*4.16 Semiconductor controlled

rectifier PJVPN.

4.17 Semiconductor controlled

rectifier NPNP.
@

*4.18 Semiconductor controlled

rectifier ( with two gata ) PNPN.

_-_____. ..__--
*Though there symbola are in general UC, they arc not strictly in cdbrmity with the
guide for use of symbola and are stillundercomidcratin.

10
4.19 PNP photo transistor.

4.26 Temperature-dependent diode.

4.21 Variable capacitance diode.

-63
4.22 Tunnel diode.

4.23 Tunnel triode, PNP-type.

4.24 Breakdown
tional.
diode, unidirec-

0
J

4.25 Breakdown diode, bidirectionai.

0
'J

4.26 NPN avalanche transistor.

J
@

11
 IS : 2032 ( Part VIII ) - 1965

4.27 PllrJtoco;lductive ccl I with

symmetrical conductivity.

4.28 Photoconductive cell with

asymmetrical conductivity.

4.29 Photovoltaic cell.

4.30 Hall-effect devices, with four

ohmic connections.

12
~..
r