Low-Power Synthesizer With Effects
Low-Power Synthesizer With Effects
Low-Power Synthesizer With Effects
Key features
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© 2013-2014 DREAM S.A.S. - All rights reserved
SAM2634
1- TYPICAL DESIGN
SAM2634 CleanWave
ROM General Midi compliant synthesis
Sound extensions (CleanWave64)
Reverb + chorus
= MIDI serial or 8 bit parallel interface
DAC Surround effect
4 bands parametric equalizer
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SAM2634
2- GENERAL DESCRIPTION
Synthesis/DSP
64 slots
RISC DSP core CODEC
includes + DAC
512x32 Alg RAM
128x28 MA1 RAM
256x28 MA2 RAM 32k x 16 RAM
P16 Processor 256x28 MB RAM
256x16 MX RAM
256x12 MY RAM
16-bit CISC 64x13 ML RAM
Processor Core MMU ROM
or
includes Memory FLASH
256x16 Data RAM Management
I/O Functions Unit SRAM
includes
Control/Status
MIDI UART ROM
Debug/Flash prog
Timers
Codec data I/F MIDI
Host I/F Fifo 8-bit port
SPI
SAM2634 Serial
Flash
Debug
Flash prog
The SAM2634 is a low cost derivative of the SAM2000 series. It retains the same high
quality synthesis with up to 64 voices polyphony. The SAM2634 maximum wavetable
memory is 32 MBytes and the parallel communication is through a standard 8-bit port.
The integrated 32kx16 RAM allows for high quality effects without additional
component.
The highly integrated architecture from SAM2634 combines a specialized high-
performance RISC-based digital signal processor (Synthesis/DSP) and a general
purpose 16 bits CISC-based control processor on a single chip. An on-chip memory
management unit (MMU) allows the synthesis/DSP and the control processor to share
external ROM and/or RAM memory devices. An intelligent peripheral I/O interface
function handles other I/O interfaces, such as the 8-bit parallel, the on-chip MIDI UART,
and the Codec control interface, with minimum intervention from the control processor.
Synthesis/DSP engine
The synthesis/DSP engine operates on a frame timing basis with the frame subdivided
into 64 processes slots. Each process is itself divided into 16 micro-instructions known
as « algorithm ». Up to 32 synthesis/DSP algorithms can be stored on-chip in the Alg
RAM memory, allowing the device to be programmed for a number of audio signal
generation/processing applications. The synthesis/DSP engine is capable of generating
64 simultaneous voices using algorithms such as wavetable synthesis with interpolation,
alternate loop and 24dB resonant filtering for each voice. Slots may be linked together
to allow implementation of more complex synthesis algorithms.
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SAM2634
A typical application will use part of the capacity of the synthesis/DSP engine for
wavetable voices, another part for functions like reverb, chorus, audio in processing,
surround effect, equalizer, etc. Dynamic synthesis slot allocation is possible for best
polyphony/feature tradeoff.
Frequently accessed synthesis/DSP parameter data are stored into 5 banks of on-chip
RAM memory. Sample data or delay lines, which are accessed relatively infrequently,
are stored in external ROM or internal 32kx16 RAM memory. The combination of
localized micro-program memory and localized parameter data allows micro-instructions
to execute in 20 ns (50 MIPS). Separate busses from each of the on-chip parameter
RAM memory banks allow highly parallel data movement to increase the effectiveness
of each micro-instruction. With this architecture, a single micro-instruction can
accomplish up to 6 simultaneous operations (add, multiply, load, store, etc.), providing a
potential throughput of 300 million operations per second (MOPS).
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SAM2634
3- PIN DESCRIPTION
3-1- PIN BY FUNCTION – 100-pin LQFP Package
- Greyed text describes alternate function for multifunction pins.
- 5VT indicates a 5 volt tolerant Input or I/O pin.
- indicates driving capability at VOL, VOH (see § 6- D.C.
DR2, DR4, DR6, DR8, DR12
CHARACTERISTICS)
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SAM2634
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SAM2634
Miscellaneous group
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SAM2634
3-2- PIN-OUT BY PIN NUMBER – 100-pin LQFP Package
Pin# Signal Name Pin# Signal Name Pin# Signal Name Pin# Signal Name
1 CKOUT 26 GND 51 WOE/ 76 TEST
2 CLBD 27 CS/ 52 WWE/ 77 RST/PD/
3 WSBD 28 RD/ 53 D0 78 X1
4 DABD0 29 MIDI_IN 54 GND 79 X2
5 DABD1 30 WD0 55 D1 80 VD33
6 DAAD 31 WD1 56 D2 81 IRQ
7 NC 32 WD2 57 D3 82 WA0
8 MIDI_OUT 33 GND 58 D4 83 WA1
9 WA13 34 VD33 59 D5 84 WA2
10 WA14 35 WD3 60 VD33 85 WA3
11 WA15 36 WD4 61 D6 86 WA4
12 WA16 37 WD5 62 D7 87 WA5
13 WA17-FS0 38 WD6 63 P0 88 WA6
14 WA18-FS1 39 WD7 64 P1 89 WA7
15 VD33 40 WD8 65 P2 90 WA8
16 GND 41 WD9 66 P3 91 WA9
17 WA19 42 WD10 67 GND 92 WA10
18 WA20 43 WD11 68 SO 93 WA11
19 WA21 44 WD12 69 SI 94 WA12
20 WA22 45 WD13 70 SCK 95 GND
21 WA23 46 WD14 71 STIN 96 VD33
22 WA24 47 WD15 72 STOUT 97 NC
23 A0 48 XIO/-CDPG/ 73 OUTVC12 98 NC
24 VD33 49 WCS0/ 74 VD33 99 XDIV
25 WR/ 50 WCS1/ 75 GND 100 GND
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SAM2634
3-3- MECHANICAL DIMENSIONS – 100-pin LQFP Package
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SAM2634
3-4- MARKING
LQFP100
FRANCE
SAM2634
XXXXX-XXX
YYWW
PIN 1
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SAM2634
4- ABSOLUTE MAXIMUM RATINGS (All voltages with respect to 0V, GND=0V)*
*NOTICE: Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent
damage to the device. This is a stress rating only and functional operation of the device at these or any
other conditions beyond those indicated in the operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
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SAM2634
7- PERIPHERALS AND TIMINGS
All timings are valid in recommended operating conditions, with load capacitance=30pF
on all outputs, except X2.
All timings refer to tck, which is the internal master clock period.
When XDIV is connected to ground, the internal master clock frequency is 4
times the frequency at pin X1. Therefore tck = txtal ÷ 4.
When XDIV is connected to VD33, the internal master clock frequency is 3.4
times the frequency at pin X1. Therefore tck = txtal ÷ 3.4.
The sampling rate is given by 1/(tck*1024). The maximum crystal frequency/clock
frequency at X1 is 12.288 MHz (48 KHz sampling rate).
There is a trade-off between the crystal frequency and the support of widely available
external ROM/Flash components. The following chart allows selecting the best fit for a
given application:
Using 12.288 MHz crystal frequency allows using widely available ROM/Flash with 90ns
access time, while providing state of the art 48 KHz sampling rate
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SAM2634
7-2- PC HOST INTERFACE
- Timings
A0
ta v c s
CS/
tc s lr d l tp r d tr d h c s h
RD/
tr d ld v td r h
D 0 -D 7
H o s t in t e r f a c e r e a d c y c le
tw rcy c
A0
tav cs
CS/
tcslw rl tp w r tw rh csh
W R/
td w s td w h
D 0 -D 7
- IO Status Register
TE RF X X X X X X Status register is read when A0 = 1, RD/ = 0, CS/ = 0
TE: Transmit empty. If 0, data from SAM2634 to host is pending and IRQ is high. Reading the
data at A0=0 will set TE to 1 and clear IRQ.
RF: Receiver full. If 0 then SAM2634 is ready to accept DATA from host.
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SAM2634
Pins used:
SI, SCK (outputs)
SO (input)
The SCK frequency is firmware programmable from fck/4 to fck/256, fck being the system clock
frequency (fck=1/tck). This allows accommodating a large variety of EEPROM/DataFlash
devices.
SCK
SI LSB
SO MSB
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SAM2634
7-4- EXTERNAL ROM/Flash TIMING
tRC
WCS0/
WCS1/
XIO/
tCSOE
WA0-
WA24
tPOE
WOE/
tOE tDF
WD0-
WD15 tACE
tWC
WCS/
tCSWE
WA0-
WA23
WA24
WOE/
tWP
WWE/
tDW tDH
WD0-
WD15
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SAM2634
7-6- DIGITAL AUDIO TIMING
CLBD
tsod tsod
DABD0
DABD1
DAAD
CLBD
DABD0
DABD1
DAAD MSB LSB MSB
(16bits) LSB
(20bits)
LSB
(18bits)
Notes:
- Selection between I2S and Japanese format is a firmware option
- DAAD is 16 bits only
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SAM2634
8- RESET AND POWER DOWN
During power-up, the RST/PD/ input should be held low during 10ms. A typical
RC/diode power-up network can be used.
After the low to high transition of RST/PD/, following happens:
- The Synthesis/DSP enters an idle state.
- P16 program execution starts from address 0100H in ROM space (WCS/ low).
If RST/PD/ is asserted low then the crystal oscillator and PLL will be stopped. The chip
enters a deep power down sleep mode, as power is removed from the core. To exit
power down, RST/PD/ has to be asserted high.
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SAM2634
8-1- PIN STATUS IN POWER-DOWN
Table below shows the status of each pin in Normal mode (RST/PD/ High) and in
Power-down mode (RST/PD/ Low)
Note:
- Keeper resistor can be pull-up or to pull-down resistor. This will depend on logic
state at the pin where it is connected when switching to Power-down mode.
o If logic state is ‘Low’ when entering Power-down mode, keeper resistor will
be pull-down
o If logic state is ‘High’ when entering Power-down mode, keeper resistor will
be pull-up
- In a designs where it is planned to use the Power-down mode, external pull up or
pull down resistor should be added on each pin that have the “IN (floating)” status
and that is not externally driven in Power-down mode. To avoid consumption in
Normal mode these resistors can have high value like 1MOhm.
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SAM2634
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SAM2634
Like all HCMOS high integration ICs, following simple rules of board layout is mandatory
for reliable operations:
All GND, VD33 pins should be connected. A GND plane is strongly recommended
below the SAM2634. The board GND + VD33 planes could be in grid form to minimize
EMI.
Recommended decoupling is 470pF in parallel with 2.2 or 4.7µF close to OUTVC12 pin.
VD33 requires 0.1uF at each corner of the IC with an additional 10µFT capacitor should
be placed close to the crystal.
Crystal, LFT
The paths between the crystal, the crystal compensation capacitors and the SAM2634
should be short and shielded. The ground return from the compensation capacitors
should be the GND plane from SAM2634.
Busses
Parallel layout from D0-D7 and WA0-WA23/WD0-WD15 should be avoided. The D0-D7
bus is an asynchronous type bus. Even on short distances, it can induce pulses on
WA0-WA24/WD0-WD15 which can corrupt address and/or data on these busses.
A ground plane should be implemented below the D0-D7 bus, which connects both to
the host and to the SAM2634 GND.
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SAM2634
11- PRODUCT DEVELOPPMENT AND DEBUGGING
Two dedicated IC pins, STIN and STOUT allow running firmware directly into the target
using standard PC COM port communication at 57.6 kbauds. Thus time to market is
optimized by testing directly on the final prototype.
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SAM2634
Dream Contact
[email protected]
Website
http://www.dream.fr
This publication neither states nor implies any warranty of any kind, including, but not limited to, implied warrants of merchantability
or fitness for a particular application. Dream assumes no responsibility for the use of any circuitry. No circuit patent licenses are
implied.
The information in this publication is believed to be accurate in all respects at the time of publication but is subject to change without
notice. Dream assumes no responsibility for errors and omissions, and disclaims responsibility for any consequences resulting from
the information included herein.
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