Epitaxial Planar Transistor (NPN)

TSL13003

Epitaxial Planar Transistor (NPN)

Features
 NPN Silicon Epitaxial Planar Transistor
 Suitable for Lighting, Switching Regulator and Motor Control
 RoHS compliance

TO-92

Mechanical Data
Case: TO-92, Plastic Package

Terminals: Solderable per MIL-STD-202G, Method 208

Weight: 0.18 gram

Maximum Ratings (T Ambient=25ºC unless noted otherwise)

Symbol Description TSL13003 Unit

VCBO Collector-Base Voltage 600 V

VCEO Collector-Emitter Voltage 400 V

VEBO Emitter-Base Voltage 9.0 V

Collector Current Continuous 1.5 A

IC
Collector Current Peak* 3.0 A

Power Dissipation at TLead=25°C 2.0 W

PD
Derate above 25°C 16 mW/° C

Power Dissipation at TA=25°C 1.1 W

PC
Derate above 25°C 8.8 mW/° C
Operating and Storage Junction Temperature
TJ, TSTG Range
-65 to +150 °C

Note: *Pulse Test: Pulse Width=5ms, Duty Cycle=10%

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 Epitaxial Planar Transistor (NPN)

TSL13003
Thermal Characteristics
Symbol Description TSL13003 Unit

RthJC Thermal Resistance from Junction to Case 48 °C/W

RthJL Thermal Resistance from Junction to Lead 62.5 °C/W

RthJA Thermal Resistance from Junction to Ambient 113.6 °C/W

Electrical Characteristics (T Ambient=25ºC unless noted otherwise)

TSL13003
Symbol Description Unit Conditions
Min. Max.

VCBO Collector-Base Voltage 600 - V IC=1mA, IE=0

**VCEO(SUS) Collector Emitter Voltage 400 - V IC=10mA, IB=0

- 1.0 mA VCB=600V, IE=0

ICBO Collector Cut-off Current
- 5.0 mA VCB=600V, IE=0, Tc=100°C

IEBO Emitter Cut-off Current - 1.0 mA VEB=9V, IC=0

10 30 VCE=2V, IC=0.3A

**hFE D.C. Current Gain 8.0 40 VCE=2V, IC=0.5A

4.0 25 VCE=2V, IC=1A

- 0.5 V IC=0.5A, IB=0.1A

- 1.0 V IC=1.0A, IB=0.25A

**VCE(sat) Collector Emitter Saturation Voltage
- 3.0 V IC=1.5A, IB=0.5A

- 1.0 V
IC=1.0A, IB=0.25A,
Tc=100°C

- 1.0 V IC=0.5A, IB=0.1A

**VBE(sat) Base Emitter Saturation Voltage - 1.2 V IC=1.0A, IB=0.25A

- 1.1 V
IC=1.0A, IB=0.25A,
Tc=100°C

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 Epitaxial Planar Transistor (NPN)

TSL13003
TSL13003
Symbol Description Unit Conditions
Min. Max.

VCE=10V, IC=100mA,
fT Current Gain Bandwidth Product 4.0 - MHz
f=1MHz

Cob Out-Put Capacitance 21 (typ.) pF VCB=10V, f=0.1MHz

ton Turn Time - 1.1 µs VCC=125V

tf Fall Time - 0.7 µs IB1=IB2=0.2A

ts Storage Time - 4.0 µs IC=1.0A

Note: **Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%

Dimensions in mm

TO-92

Rev. A/CW
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 Epitaxial Planar Transistor (NPN)

TSL13003
Packing Information
Bulk Packing

Tape and Ammo Packing

Pack Description Standard Pack Inner Box Carton Box

BL Bulk, RoHS 1K/polybag 5K 80K
BG Bulk, Halogen Free 1K/polybag 5K 80K
AR Ammo, RoHS 2K/ammo box - 40K
AG Ammo, Halogen Free 2K/ammo box - 40K

Rev. A/CW
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 Epitaxial Planar Transistor (NPN)

TSL13003
Tape Dimensions

Rev. A/CW
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 Epitaxial Planar Transistor (NPN)

TSL13003

How to contact us

US HEADQUARTERS
28040 WEST HARRISON PARKWAY, VALENCIA, CA 91355-4162
Tel: (800)-TAITRON (800)-824-8766 (661)-257-6060
Fax: (800)-TAITFAX (800)-824-8329 (661)-257-6415
Email: [email protected]
Http://www.taitroncomponents.com

TAITRON COMPONENTS MEXICO, S.A .DE C.V.

BOULEVARD CENTRAL 5000 INTERIOR 5 PARQUE INDUSTRIAL ATITALAQUIA, HIDALGO
C.P. 42970 MEXICO
Tel: +52-55-5560-1519
Fax: +52-55-5560-2190

TAITRON COMPONENTS INCORPORATED TAIWAN, TAIPEI

6F., No.190, Sec. 2, Zhongxing Rd., Xindian Dist., New Taipei City 23146, Taiwan R.O.C.
Tel: 886-2-2913-6238
Fax: 886-2-2913-6239

TAITRON COMPONETS INCORPORATED, SHANGHAI REPRESENTATIVE OFFICE

METROBANK PLAZA,1160 WEST YAN’AN ROAD, SUITE 1503, SHANGHAI,200052, CHINA
Tel: +86-21-5424-9942
Fax: +86-21-5424-9931
CROSS REGION PLAZA, 899 LINGLING ROAD, SUITE 18C, SHANGHAI, 200030, CHINA
Tel: +86-21-5424-9942
Fax: +86-21-5424-9931

Rev. A/CW
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