Electrical Properties-II: Energy Band Structures in Solids

Electrical Properties-II
Energy Band Structures in Solids

In all conductors, semiconductors, and many insulating materials, only electronic conduction
exists, and the magnitude of the electrical conductivity is strongly dependent on the number of
electrons available to participate in the conduction process. The number of electrons available for
electrical conduction in a particular material is related to the arrangement of electron states or
levels with respect to energy, and then the manner in which these states are occupied by
electrons.
Concepts relating to electron energy states, their occupancy, and the resulting electron
configuration for isolated atoms were discussed in Chapter 2. By way of review, for each
individual atom there exist discrete energy levels that may be occupied by electrons, arranged
into shells and subshells. Shells are designated by integers (1, 2, 3, etc.), and subshells by letters
(s, p, d, and f). For each of s, p, d, and f subshells, there exist, respectively, one, three, five, and
seven states. The electrons in most atoms fill only the states having the lowest energies, two
electrons of opposite spin per state, in accordance with the Pauli’s exclusion principle. The
electron configuration of an isolated atom represents the arrangement of the electrons within the
allowed states.
Let us now make an extrapolation of some of these concepts to solid materials. A solid may be
thought of as consisting of a large number, say, N, of atoms initially separated from one another,
which are subsequently brought together and bonded to form the ordered atomic arrangement
found in the crystalline material. At relatively large separation distances, each atom is
independent of all the others and will have the atomic energy levels and electron configuration as
if isolated. However, as the atoms come within close proximity of one another, electrons are
acted upon, or perturbed, by the electrons and nuclei of adjacent atoms. This influence is such
that each distinct atomic state may split into a series of closely spaced electron states in the solid,
to form what is termed an electron energy band. The extent of splitting depends on interatomic
separation (Figure a) and begins with the outermost electron shells, since they are the first to be
perturbed as the atoms coalesce. Within each band, the energy states are discrete, yet the
difference between adjacent states is exceedingly small. At the equilibrium spacing, band
formation may not occur for the electron subshells nearest to the nucleus. Furthermore, gaps may
exist between adjacent bands; normally, energies lying within these band gaps are not available
for electron occupancy.
Schematic plot of electron energy versus interatomic separation for an aggregate of 12
atoms (N=12).
Conventional
representation of the
electron energy band
structure for a solid
material at the equilibrium
interatomic separation
 The number of states within each band will equal the total number of states contributed by
the N atoms. For example, an ‘s’ band will consist of N states, and a ‘p’ band of 3N states.
 Each energy state may accommodate two electrons, which must have oppositely directed
spins.
 The bands will contain the electrons that resided in the corresponding levels of the isolated
atoms.
 There may be empty bands and partially filled bands.
 The electrical properties of a solid material are a consequence of its electron band structure –
that is the arrangement of the outermost electron bands and the ways in which they are filled
with electrons.
Energy band structures
 Four types of band structures are possible at 0 K as shown in the following figure:
 The energy corresponding to the highest filled state at 0 K is called the Fermi energy, Ef.
Figure 18.4. The various possible electron band structures in solids at 0 K.
In the first one (Figure 18.4 (a)) outermost band is only partially filled with electrons. This
energy band structure is typified by some metals, in particular those that have a single ‘s’ valence
electron (e.g., copper). Each copper atom has one 4s electron; however, for a solid comprised of
N atoms, the 4s band is capable of accommodating 2N electrons. Thus only half the available
electron positions within this 4s band are filled.
For the second band structure, also found in metals (Figure (b)), there is an overlap of an empty
band and a filled band. Magnesium has this band structure. Each isolated Mg atom has two 3s
electrons. However, when a solid is formed, the 3s and 3p bands overlap. In this instance and at 0
K, the Fermi energy is taken as that energy, below which, for N atoms, N states are filled, two
electrons per state.
The final two band structures are similar; one band (the valence band) that is completely filled
with electrons is separated from an empty conduction band, and an energy band gap lies
between them. For very pure materials, electrons may not have energies within this gap. The
difference between the two band structures lies in the magnitude of the energy gap; for materials
that are insulators, the band gap is relatively wide (>4 eV) (Figure (c)), whereas for
semiconductors it is narrow (<2 eV) (Figure (d)). The Fermi energy for these two band
structures lies within the band gap—near its center.
Energy Band Structures and Conductivity
 Only electrons with energies greater than the Fermi energy may be acted on and accelerated
in the presence of an electric field. These electrons that participate in the conduction process,
are termed free electrons.
 For metals having either of the band structures shown in Figures 18.4a and 18.4b, there are
vacant energy states adjacent to the highest filled state at Ef. Thus, very little energy is
required to promote electrons into the low-lying empty states. Generally, the energy provided
by an electric field is sufficient to excite large numbers of electrons into these conducting
states.
 Metals have high conductivities because of the large number of free electrons that have been
excited into empty states above the Fermi energy.
 In semi-conductors and insulators, electrons must be promoted across the energy band gap
into the empty states at the bottom of the conduction band, to find conducting states above Ef.
 This excitation energy needed for the jump may come from heat, or light, usually former.
 The number of electrons excited thermally (by heat energy) into the conduction band
depends on the energy band gap width as well as temperature.
 At a given temperature, the larger the band gap (Eg), the lower is the probability that a
valence electron will be promoted into an energy state within the conduction band; this
results in fewer conduction electrons.
 The higher the band gap, lower is the electrical conductivity at a given temperature.
 The distinction between semi-conductors and insulators lies in the width of the band gap; for
semiconductors it is narrow, whereas for insulating materials it is relatively wide.
 Increasing the temperature of either a semiconductor or an insulator results in an increase in

the thermal energy that is available for electron excitation. Thus, more electrons are
promoted into the conduction band, which gives rise to an enhanced conductivity.
 An electron promoted into the conduction band leaves a hole (positive charged entity) in the
valence band, that can also participate in the conduction process.
 Holes exist in metals as well, but are more important in semiconductors and insulators.
Figure. For an insulator or semiconductor, occupancy of electron states (a) before and (b) after
an electron excitation from the valence band into the conduction band, in which both a free
electron and a hole are generated.
Energy Band Structures and Bonding (metals, semiconductors, insulators)
 Insulators – For electrically insulating materials, interatomic bonding is ionic or strongly

covalent. Thus, the valence electrons are tightly bound to or shared with the individual
atoms.
 Semi-conductors - The bonding in semiconductors is covalent (or predominantly covalent)

and relatively weak, which means that the valence electrons are not as strongly bound to the
atoms. Consequently, these electrons are more easily removed by thermal excitation than
they are for insulators.
 Metals – valence electrons form an “electron gas” that are not bound to any particular ion.
Materials of Choice for Metal Conductors
 One of the best materials for electrical conduction (low resistivity) is silver, but its use is
restricted due to the high cost.
 Most widely used conductor is copper: inexpensive, abundant, high σ, but rather soft –
cannot be used in applications where mechanical strength is important.
 When weight is important one uses aluminum, which is half as good as Cu and more
resistant to corrosion.
 Heating elements require low σ (high R), and resistance to high temperature oxidation:
nichrome or nickel-chromium alloy.
Charge Carriers in Insulators and Semiconductors
Two types of electronic charge carriers:
Free Electron
– negative charge
– in conduction band
Hole
– positive charge
– vacant electron state in the valence band
• The electrical conductivity is a direct function of the numbers of free electrons and holes.

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Electrical Properties-II

Energy Band Structures in Solids

Figure 18.4. The various possible electron band structures in solids at 0 K.

 Increasing the temperature of either a semiconductor or an insulator results in an increase in

Energy Band Structures and Bonding (metals, semiconductors, insulators)

 Insulators – For electrically insulating materials, interatomic bonding is ionic or strongly

 Semi-conductors - The bonding in semiconductors is covalent (or predominantly covalent)

Materials of Choice for Metal Conductors

Two types of electronic charge carriers:

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