MRF89XAM8A

Data Sheet
868 MHz Ultra-Low Power
Sub-GHz Transceiver Module

© 2010 Microchip Technology Inc. Preliminary DS70651A

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ISBN: 978-1-60932-637-1
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DS70651A-page ii Preliminary © 2010 Microchip Technology Inc.

 MRF89XAM8A
868 MHz Ultra-Low Power Sub-GHz Transceiver Module

Features RF/Analog Features

• Module designed from the MRF89XA integrated • 863–870 MHz operation
ultra low-power, sub-GHz transceiver IC. • Modulation: FSK and OOK
• Supports proprietary sub-GHz wireless protocols • Data rate (to conform to ETSI standards):
• Simple, SPI Interface with Interrupts - FSK: 40 kbps
• Small size: 0.7" x 1.1" (17.8 mm x 27.9 mm), - OOK: 16 kbps
surface mountable • Reception sensitivity
• Integrated crystal, internal voltage regulator, - FSK: -107 dBm (typical) at 25 kbps
matching circuitry and Printed Circuit Board
- OOK: -113 dBm (typical) at 2 kbps
(PCB) antenna
• +10 dBm typical output power with 21 dB Tx
• Easy integration into final product: minimize prod-
power control range
uct development, quicker time to market
• Compatible with Microchip’s Microcontroller
families (PIC16, PIC18, PIC24, dsPIC33 and
Media Access Controller
PIC32) (MAC)/Baseband Features
• Conforms to the following ETSI standards: • Packet handling features with data whitening and
- EN 300 220-2 V2.3.1 (2001–02) automatic CRC generation
- EN 301 489-3 V1.4.1 (2002–08) • Incoming sync word (pattern) recognition
• Built-in bit synchronizer for incoming data, and clock
Operational synchronization and recovery
• 64-byte transmit/receive FIFO with preload in stand-by
• Operating voltage: 2.1–3.6V (3.3V typical)
mode
• Temperature range: -40°C to +85°C Industrial
• Supports Manchester encoding/decoding
• Low-current consumption: techniques
- Rx mode: 3 mA (typical)
- Tx mode: 25 mA at +10 dBm (typical)
- Sleep: 0.1 µA (typical)

Pin diagram

GND 1 12 GND
RESET 2 11 GND
CSCON 3 10 VIN
IRQ0 4 9 IRQ1
SDI 5 8 CSDATA
SCK 6 7 SDO

© 2010 Microchip Technology Inc. Preliminary DS70651A-page 1

MRF89XAM8A
Table of Contents
.0 Device Overview .......................................................................................................................................................................... 3
2.0 Circuit Description ........................................................................................................................................................................ 9
3.0 Regulatory Approval ................................................................................................................................................................... 19
4.0 Electrical Characteristics ............................................................................................................................................................ 21
Appendix A: Revision History............................................................................................................................................................... 27
The Microchip Web Site ....................................................................................................................................................................... 29
Customer Change Notification Service ................................................................................................................................................ 29
Customer Support ................................................................................................................................................................................ 29
Reader Response ................................................................................................................................................................................ 30
Product Identification System............................................................................................................................................................... 31

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DS70651A-page 2 Preliminary © 2010 Microchip Technology Inc.

 MRF89XAM8A
1.0 DEVICE OVERVIEW 1.1 Interface description
The MRF89XAM8A is an ultra-low power sub-GHz The simplified block diagram of the MRF89XAM8A
surface mount transceiver module with integrated module is illustrated in Figure 1-1. The module is based
crystal, internal voltage regulator, matching circuitry on the Microchip Technology MRF89XA ultra-low
and PCB antenna. The MRF89XAM8A module power sub-GHz transceiver Integrated Circuit (IC). The
operates in the European 863–870 MHz frequency module interfaces to many popular Microchip PIC®
band and is ETSI compliant. The integrated module microcontrollers through a 3-wire serial SPI interface,
design frees the integrator from the extensive RF and two chip selects (configuration and data), two interrupts
antenna design, and regulatory compliance testing, Interrupt Request 0 (IRQ0) and Interrupt Request 1
allowing quicker time to market. (IRQ1), Reset, power and ground as illustrated in
Figure 1-2. Table 1-1 provides the related pin
The MRF89XAM8A module is compatible with
descriptions.
Microchip’s MiWi™ Development Environment
software stacks. The software stacks are available as a Serial communication and module configuration are
free download, including source code, from the documented in the “MRF89XA Ultra-Low Power,
Microchip’s web site Integrated Sub-GHz Transceiver” (DS70622) Data
http://www.microchip.com/wireless. Sheet. Refer to the “MRF89XA Data Sheet” for specific
serial interface protocol and general register
The MRF89XAM8A module has been tested and
definitions. Also, see Section 1.3, Operation for
conforms to EN 300 220-2 V2.3.1 (2001–02) and EN
specific register settings that are unique to the
301 489-3 V1.4.1 (2002–08) European Standards. The
MRF89XAM8A module operation to maintain
module tests can be applied toward final product
regulatory compliance.
certification and Declaration of Conformity (DoC). To
maintain conformance, refer to module settings in
Section 1.3, Operation. Additional testing may be
required depending on the end application.

FIGURE 1-1: MRF89XAM8A BLOCK DIAGRAM

MRF89XAM8A Module

MRF89XA
CSCON

Control CSDATA
Interface
Matching SPI Digital I/O
PCB Circuitry
RF Baseband
Antenna and
IRQ0
SAW Filter
Power IRQ1
Management RESET
Power

VCO Loop
Tank Filter
12.8 MHz Crystal

© 2010 Microchip Technology Inc. Preliminary DS70651A-page 3

MRF89XAM8A
TABLE 1-1: PIN DESCRIPTION
Pin Symbol Type Description
1 GND Power Ground
2 RESET DI Reset Pin
3 CSCON DI Serial Interface Configure Chip Select
4 IRQ0 DO Interrupt Request Output
5 SDI DI Serial Interface Data Input
6 SCK DI Serial Interface Clock
7 SDO DO Serial Interface Data Output
8 CSDATA DI Serial Interface Data Chip Select
9 IRQ1 DO Interrupt Request Output
10 Vin Power Power Supply
11 GND Power Ground
12 GND Power Ground

FIGURE 1-2: MICROCONTROLLER TO MRF89XAM8A INTERFACE

MRF89XAM8A PIC® Microcontroller

CSCON I/O

CSDATA I/O

SDI SDO

Vin SDO SDI

GND SCK SCK

IRQ0 INTx

IRQ1 INTx

RESET I/O

DS70651A-page 4 Preliminary © 2010 Microchip Technology Inc.

 MRF89XAM8A
1.2 Mounting Details
The MRF89XAM8A is a surface mountable module, the
module dimensions are illustrated in Figure 1-3. The
module PCB is 0.032" thick with castellated mounting
holes on the edge. Figure 1-4 is the recommended host
PCB footprint for the MRF89XAM8A.
The MRF89XAM8A has an integrated PCB antenna.
For the best performance, follow the mounting details
as illustrated in Figure 1-5. It is recommended that the
module be mounted on the edge of the host PCB and
an area around the antenna, approximately 3.4" (8.6
cm), be kept clear of metal objects for best
performance. A host PCB ground plane around the
MRF89XAM8A acts as a counterpoise to the PCB
antenna. Extend the host PCB top copper ground plane
under and to the left and right side of the module at
least 0.4 inches (1 cm) for best antenna performance.

FIGURE 1-3: MODULE DETAILS

© 2010 Microchip Technology Inc. Preliminary DS70651A-page 5

MRF89XAM8A
FIGURE 1-4: RECOMMENDED PCB FOOTPRINT

DS70651A-page 6 Preliminary © 2010 Microchip Technology Inc.

 MRF89XAM8A
FIGURE 1-5: MOUNTING DETAILS

Keep area around antenna

(approximately 3.4 inches (8.6
cm)) clear of metallic structures
3.4” for best performance.

Edge of PCB
3.4”
0.470”

0.4” 0.4”

Host PCB Top Copper Ground

Plane (Antenna Counterpoise):
Extend the host PCB top copper
ground plane under and to the left
and right side of the module at
least 0.4 inches (1 cm) for best
antenna performance.

© 2010 Microchip Technology Inc. Preliminary DS70651A-page 7

MRF89XAM8A
1.3 Operation 1.3.4 FREQUENCY SHIFT KEYING
MODULATION (FSK)
The MRF89XAM8A module is based on the Microchip
Technology MRF89XA ultra-low power, integrated ISM The following settings must be followed for FSK
band sub-GHz transceiver IC. Serial communication modulation mode to conform to the European
and module configuration are documented in the standards summarized in Section 3.0, Regulatory
“MRF89XA Ultra-Low Power, Integrated ISM Band Approval.
Sub-GHz Transceiver Data Sheet” (DS70622). • Bit Rate Maximum Setting: 40 kbps
This section emphasizes operational settings that are • Frequency Deviation Maximum Setting: 40 kHz
unique to the MRF89XAM8A module design that must • Transmit Bandwidth Maximum Setting: 125 kHz
be followed in order for the module to conform to the • Lower Frequency Setting: 863.5 MHz
tested European standards summarized in Section 3.0,
• Upper Frequency Setting: 869.5 MHz
Regulatory Approval.
Note: To maintain conformance to tested ETSI 1.3.5 ON-OFF KEYING MODULATION
standards, the module shall not be (OOK)
modified and settings in Section 1.3, The following settings must be followed for OOK
Operation must be observed. modulation mode to conform to the European
standards summarized in Section 3.0, Regulatory
1.3.1 RESET Approval.
Pin 2 of the module, RESET, enables an external reset • Bit Rate Maximum Setting: 16 kbps
of the MRF89XA IC. RESET is connected to the TEST8
• Frequency Deviation Maximum Setting: 80 kHz
pin of the MRF89XA IC. During normal operations of
the MRF89XAM8A, the RESET pin should be held in a • Transmit Bandwidth Maximum Setting: 125 kHz
high impedance state. For more information on • Lower Frequency Setting: 863.5 MHz
assertion of the RESET pin, refer to “Section 3.1.2 • Upper Frequency Setting: 869.5 MHz
Manual Reset” of “MRF89XA Data Sheet” (DS70622).

1.3.2 CRYSTAL FREQUENCY

When calculating frequency deviation, bit rate, receiver
bandwidth, and PLL R, P and S values, use crystal
frequency fxtal = 12.8 MHz.

1.3.3 CLOCK OUTPUT (CLKOUT)

The CLKOUT pin 19 of the MRF89XA IC is not used on
the module. Ensure that the CLKOUT signal is disabled
to minimize current consumption.

DS70651A-page 8 Preliminary © 2010 Microchip Technology Inc.

 MRF89XAM8A
2.0 CIRCUIT DESCRIPTION Figure 2-2 illustrates the MRF89XAM8A schematics.
Table 2-1 details the Bill of Materials (BOM).
The MRF89XAM8A module interfaces to Microchip’s
PIC16, PIC18, PIC24, dsPIC33 and PIC32
microcontrollers with a minimum of external
components through digital only connections. An
example application schematic is illustrated in
Figure 2-1.

2.1 Module Schematic

The MRF89XAM8A module is based on the Microchip
Technology MRF89XA Ultra-Low Power, Integrated
ISM Band sub-GHz Transceiver IC. The serial I/O
(CSCON, CSDATA, SCK, SDO and SDI), RESET,
IRQ0 and IRQ1 pins are brought to the module pins.
Crystal X1 is a 12.8 MHz crystal with a frequency
tolerance of ±10 ppm at 25°C. The RFIO output is
matched to the SAW filter FL1 and further matched to
the PCB trace antenna.

FIGURE 2-1: MRF89XAM8A APPLICATION SCHEMATIC

+ 3.3V
Note 1

C1 + C2
0.1 μF 1 0 μF
U1
MRF89XAMxA-I/RM

1 12
GND GND
2 11
RESET GND
3 10
CSCON VIN
To Host 4 9
Microcontroller IRQ0 IRQ1 To Host
5 8 Microcontroller
SDI CSDATA
6 7
SCK SDO

Note: For battery powered applications, place a 10 μF capacitor in parallel with the 0.1 μF bypass
capacitor to provide a low impedance during startup sequences.

© 2010 Microchip Technology Inc. Preliminary DS70651A-page 9

 MRF89XAM8A
MRF89XAM8A SCHEMATIC

Designators not used: C6, L5

FIGURE 2-2:

Note:
DS70651A-page 10 Preliminary © 2010 Microchip Technology Inc.
 MRF89XAM8A
TABLE 2-1: MRF89XAM8A BILL OF MATERIALS
Designator Value Description Manufacturer Part Number
C1 0.047 µF Capacitor, Ceramic, 10V, ±10%, X7R, SMT Murata GRM155R71A473KA
0402 01D
C2 0.22 µF Capacitor, Ceramic, 16V, ±10%, X7R, SMT Murata GRM155R71C224KA
0402 12D
C3 1 µF Capacitor, Ceramic, 6.3V, ±10%, X5R, SMT Murata GRM188R60J105KA
0603 01D
C4 22 pF Capacitor, Ceramic, 50V, ±5%, UHI-Q NP0, Johanson Technology 500R07S220JV4
SMT 0402
C5 1.8 pF Capacitor, Ceramic, 50V, ±0.1 pF, UHI-Q Johanson Technology 500R07S1R8BV4
NP0, SMT 0402
C6 — Designator not used — —
C7 33 pF Capacitor, Ceramic, 50V, ±5%, C0G, SMT Murata GRM1555C1H330JZ
0402 01D
C8 0.1 µF Capacitor, Ceramic, 16V, ±10%, X7R, SMT Murata GRM155R71C104KA
0402 88D
C9 680 pF Capacitor, Ceramic, 50V, ±5%, C0G, SMT Murata GRM1555C1H681JA
0402 01D
C10 0.01 µF Capacitor, Ceramic, 16V, ±10%, X7R, SMT Murata GRM155R71C103KA
0402 01D
C11 4.3 pF Capacitor, Ceramic, 50V, ±0.1 pF, UHI-Q Johanson Technology 500R07S4R3BV4
NP0, SMT 0402
C12 1.5 pF Capacitor, Ceramic, 50V, ±0.1 pF, UHI-Q Johanson Technology 500R07S1R5BV4
NP0, SMT 0402
FL1 TA0801A Filter, SAW, 863–870 MHz Tai-saw Technology TA0801A
L1 8.2 nH Inductor, Ceramic, ±5%, SMT 0402 Johanson Technology L-07C8N2JV6T
L2 100 nH Inductor, Ceramic, ±5%, SMT 0402 Johanson Technology L-07CR10JV6T
L3 6.8 nH Inductor, Wirewound, ±5%, SMT 0402 Johanson Technology L-07W6N8JV4T
L4 6.8 nH Inductor, Wirewound, ±5%, SMT 0402 Johanson Technology L-07W6N8JV4T
L5 Designator not used
L6 10 nH Inductor, Ceramic, ±5%, SMT 0402 Johanson Technology L-07C10NJV6T
R1 1Ω Resistor, 1%, ±100 ppm/0C, SMT 0402 Vishay/Dale CRCW04021R00FKE
D
R2 100K Ω Resistor, 5%, ±100 ppm/0C, SMT 0402 Yageo RC0402JR-07100KL
R3 6.8K Ω Resistor, 1%, ±100 ppm/0C, SMT 0402 Yageo RC0402FR-076K8L
U1 MRF89XA Transceiver, Ultra-Low Power, Integrated Microchip Technology MRF89XA-I/MQ
sub-GHz
X1 12.8 MHz Crystal, ±10 ppm, 15 pF, ESR 100 ohms, Abracon ABM3B-155-12.800M
SMT 5 x 3.2mm Hz-T

© 2010 Microchip Technology Inc. Preliminary DS70651A-page 11

MRF89XAM8A
2.2 Printed Circuit Board FIGURE 2-5: LAYER 2 — GROUND
PLANE
The MRF89XAM8A module PCB is constructed with
high temperature FR4 material, 4 layers and 0.032
inches thick. These layers are shown in Figure 2-3
through Figure 2-8. The stack up of the PCB is shown
in Figure 2-9

FIGURE 2-3: TOP SILK SCREEN

FIGURE 2-6: LAYER 3 — POWER

PLANE

FIGURE 2-4: TOP COPPER

DS70651A-page 12 Preliminary © 2010 Microchip Technology Inc.

 MRF89XAM8A
FIGURE 2-7: BOTTOM COPPER

FIGURE 2-8: BOTTOM SILK SCREEN

© 2010 Microchip Technology Inc. Preliminary DS70651A-page 13

MRF89XAM8A
FIGURE 2-9: PCB LAYER STACK UP

1/2 oz. Copper Top Copper

8 mil FR4

1/2 oz. Copper Ground Plane

0.032”
12 mil FR4
± 0.005”
1/2 oz. Copper Power Plane

8 mil FR4

1/2 oz. Copper Bottom Copper

2.3 PCB Antenna FIGURE 2-10: PCB ANTENNA

DIMENSIONS
The PCB antenna is fabricated on the top copper trace.
Figure 2-10 illustrates the trace dimensions. The layers
below the antenna have no copper traces. The ground
16.8mm
and power planes under the components serve as a 1.0mm
counterpoise to the PCB antenna. Additional ground
plane on the host PCB will substantially enhance the 2.5mm
1.1mm
performance of the module. For best performance,
place the module on the host PCB by following the
recommendations given in the Section 1.2, Mounting
Details.
The PCB antenna was designed and simulated using
Ansoft Designer® and HFSS™ 3D full-wave solver
software by ANSYS Inc. (www.ansoft.com). The goal of 0.5mm
the design was to create a compact, low-cost antenna 8.4mm
with the best radiation pattern. Figure 2-11 illustrates
the simulation drawing and Figure 2-12 and
Figure 2-13 illustrates the 2D and 3D radiation
patterns. As shown by the radiation patterns, the
performance of the antenna is dependant upon the
orientation of the module. Figure 2-14 illustrates the
impedance simulation and Figure 2-15 illustrates the
simulated PCB antenna VSWR. The discrete matching
circuitry matches the impedance of the antenna with
the SAW filter and MRF89XA transceiver IC.

DS70651A-page 14 Preliminary © 2010 Microchip Technology Inc.

 MRF89XAM8A
FIGURE 2-11: PCB ANTENNA SIMULATION DRAWING

FIGURE 2-12: SIMULATED 2D RADIATION PATTERN

© 2010 Microchip Technology Inc. Preliminary DS70651A-page 15

MRF89XAM8A
FIGURE 2-13: SIMULATED 3D RADIATION PATTERN

FIGURE 2-14: SIMULATED PCB ANTENNA IMPEDANCE

DS70651A-page 16 Preliminary © 2010 Microchip Technology Inc.

 MRF89XAM8A
FIGURE 2-15: SIMULATED PCB ANTENNA VSWR

© 2010 Microchip Technology Inc. Preliminary DS70651A-page 17

MRF89XAM8A
NOTES:

DS70651A-page 18 Preliminary © 2010 Microchip Technology Inc.

 MRF89XAM8A
3.0 REGULATORY APPROVAL 3.1.1 HELPFUL WEB SITES
A helpful document that can be used as a starting
3.1 Europe point in understanding the use of Short Range Devices
(SRD) in Europe is the European Radio
The MRF89XAM8A module conforms to the emission Communications Committee (ERC) Recommendation
and immunity standards summarized in Table 3-1. The 70-03 E, can be downloaded from the following
module tests can be applied toward final product websites:
certification and DoC.
• European Radio Communications Office (ERO):
Note: To maintain conformance tested ETSI http://www.ero.dk.
standards, the module shall not be modi- • Radio and Telecommunications Terminal
fied and settings in Section 1.3, Operation Equipment (R&TTE):
must be observed. http://ec.europa.eu/enterprise/rtte/index_en.htm
The European Standards do not provide a modular • European Conference of Postal and
approval similar to the USA (FCC) and Canada (IC). Telecommunications Administrations (CEPT):
However, the completed compliance testing can be http://www.cept.org/
used as part of the customer's application for product • European Telecommunications Standards
certification. The module test report data can be Institute (ETSI): http://www.etsi.org/
included in the customer's product test plan and can
significantly lower customer's certification burden.
Depending on the end application, additional testing
may be required. The integrator is responsible for
testing the end product for any additional compliance
requirements that become necessary with this module
installed (for example, digital device emission, PC
peripheral requirements and so on) in the specific
country where end device is marketed.

TABLE 3-1: EMISSIONS AND IMMUNITY STANDARDS TESTED

Specification Test Method

Emission Standards
EN 300 220-2 V2.3.1 (2001–02) 7.1.2 Frequency error and drift 5.1.3.1
EN 300 220-2 V2.3.1 (2001–02) 7.3.2 Effective Radiated Power 5.1.3.3
EN 300 220-2 V2.3.1 (2001–02) 7.5.2 Transient power 5.1.3.4
EN 300 220-2 V2.3.1 (2001–02) 7.7.2 Modulation bandwidth 5.1.3.6
EN 300 220-2 V2.3.1 (2001–02) — Unwanted emissions on the spurious domain 5.1.3.7
EN 300 220-2 V2.3.1 (2001–02) 8.6.4 Receiver spurious radiation 5.1.4.6
Immunity Standards
EN 301 489-3 V1.4.1 (2002–08) — Conducted emissions EN 55022:2007
EN 301 489-3 V1.4.1 (2002–08) — Radiated emissions EN 55022:2007
EN 301 489-3 V1.4.1 (2002–08) — Radiated immunity EN 61000-4-3

© 2010 Microchip Technology Inc. Preliminary DS70651A-page 19

MRF89XAM8A
NOTES:

DS70651A-page 20 Preliminary © 2010 Microchip Technology Inc.

 MRF89XAM8A
4.0 ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings

Ambient temperature under bias.............................................................................................................. -40°C to +85°C
Storage temperature .............................................................................................................................. -55°C to +125°C
Voltage on VIN with respect to VSS ................................................................................................................ -0.3V to 6V
Voltage on any combined digital and analog pin with respect to VSS (except VIN) ...........................-0.3V to (VIN + 0.3V)
Input current into pin (except VIN and VSS)........................................................................................... -25 mA to 25 mA
Electrostatic discharge with human body model .................................................................................................... 1000V

NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at those or any other conditions above
those indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for
extended periods may affect device reliability.

© 2010 Microchip Technology Inc. Preliminary DS70651A-page 21

MRF89XAM8A
TABLE 4-1: RECOMMENDED OPERATING CONDITIONS
Parameter Min Typ Max Unit Condition
Ambient Operating Temperature -40 — +85 °C —
Supply Voltage for RF, Analog and Digital Circuits 2.1 — 3.6 V —
Supply Voltage for Digital I/O 2.1 — 3.6 V —
Input High Voltage (VIH) 0.5 * VIN — VIN + 0.3 V —
Input Low Voltage (VIL) -0.3V — 0.2 * VIN V —
AC Peak Voltage on Open Collector Outputs (IO)(1) VIN – 1.5 — VIN + 1.5 V —
Note 1: At minimum, VIN – 1.5V should not be lower than 1.8V.

TABLE 4-2: CURRENT CONSUMPTION

Symbol Chip Mode Min Typ Max Unit Condition
IDDSL Sleep — 0.1 2 µA Sleep clock disabled, all blocks
disabled
IDDST Idle — 65 80 µA Oscillator and baseband enabled
IDDFS Frequency Synthesizer — 1.3 1.7 mA Frequency synthesizer running
IDDTX Tx — 25 30 mA Output power = +10 dBm
— 16 21 mA Output power = +1 dBm(1)
IDDRX Rx — 3.0 3.5 mA —
Note 1: Guaranteed by design and characterization.

TABLE 4-3: DIGITAL I/O PIN INPUT SPECIFICATIONS(1)

Symbol Characteristic Min Typ Max Unit Condition
VIL Input Low Voltage — — 0.2 * VIN V —
VIH Input High Voltage 0.8 * VIN — — V —
IIL Input Low Leakage Current(2) -0.5 — 0.5 µA VIL = 0V
IIH Input High Leakage Current -0.5 — 0.5 µA VIH = VIN, VIN = 3.7
VOL Digital Low Output Voltage — — 0.1 * VIN — IOL = 1 mA
VOH Digital Low Output 0.9 * VIN — — V IOH = -1 mA
Note 1: Measurement Conditions: TA = 25°C, VIN = 3.3V, Crystal Frequency = 12.8 MHz, unless otherwise
specified.
2: Negative current is defined as the current sourced by the pin.

DS70651A-page 22 Preliminary © 2010 Microchip Technology Inc.

 MRF89XAM8A
TABLE 4-4: PLL PARAMETERS AC CHARACTERISTICS(1)
Symbol Parameter Min Typ Max Unit Condition
FRO Frequency Ranges 863 — 870 MHz
BRFSK Bit Rate (FSK) 1.56 — 40 kbps NRZ
BROOK Bit Rate (OOK) 1.56 — 16 kbps NRZ
FDFSK Frequency Deviation (FSK) 33 50 200 kHz —
FXTAL Crystal Oscillator Frequency 9 12.8 — MHz —
FSSTP Frequency Synthesizer Step — 2 — kHz Variable, depending on the
frequency
TSOSC Oscillator Wake-up Time — 1.5 5 ms From Sleep mode(1)
TSFS Frequency Synthesizer — 500 800 µs From Stand-by mode
Wake-up Time; at most,
10 kHz away from the target
TSHOP Frequency Synthesizer Hop — 180 — µs 200 kHz step
Time; at most, 10 kHz away — 200 — µs 1 MHz step
from the target
— 250 — µs 5 MHz step
— 260 — µs 7 MHz step
— 290 — µs 12 MHz step
— 320 — µs 20 MHz step
— 340 — µs 27 MHz step
Note 1: Guaranteed by design and characterization.

© 2010 Microchip Technology Inc. Preliminary DS70651A-page 23

MRF89XAM8A
TABLE 4-5: RECEIVER AC CHARACTERISTICS(1)
Symbol Parameter Min Typ Max Unit Condition
RSF Sensitivity (FSK) — -107 — dBm 869 MHz, BR = 25 kbps,
fdev = 50 kHz, fc = 100 kHz
— -103 — dBm 869 MHz, BR = 66.7 kbps,
fdev = 100 kHz, fc = 200 kHz
RSO Sensitivity (OOK) — -113 — dBm 869 MHz, 2 kbps NRZ
fc – fo = 50 kHz, fo = 50 kHz
— -106 — dBm 869 MHz, 16.7 kbps NRZ
fc – fo = 100 kHz, fo = 100 kHz
CCR Co-Channel Rejection — -12 — dBc Modulation as wanted signal
ACR Adjacent Channel Rejection — 27 — dB Offset = 300 kHz, unwanted tone is
not modulated
— 52 — dB Offset = 600 kHz, unwanted tone is
not modulated
— 57 — dB Offset = 1.2 MHz, unwanted tone is
not modulated
BI Blocking Immunity — -48 — dBm Offset = 1 MHz, unmodulated
— -37 — dBm Offset = 2 MHz, unmodulated, no
SAW
— -33 — dBm Offset = 10 MHz, unmodulated, no
SAW
RXBWF Receiver Bandwidth in FSK 50 — 250 kHz Single side BW, Polyphase Off
Mode(2)
RXBWU Receiver Bandwidth in OOK 50 — 400 kHz Single side BW, Polyphase On
Mode(2)
ITP3 Input Third Order Intercept — -28 — dBm Interferers at 1 MHz and 1.950 MHz
Point offset
TSRWF Receiver Wake-up Time — 280 500 µs From FS to Rx ready
TSRWS Receiver Wake-up Time — 600 900 µs From Stand-by to Rx ready
TSRHOP Receiver Hop Time from Rx — 400 — µs 200 kHz step
Ready to Rx Ready with a — 400 — µs 1 MHz step
Frequency Hop
— 460 — µs 5 MHz step
— 480 — µs 7 MHz step
— 520 — µs 12 MHz step
— 550 — µs 20 MHz step
— 600 — µs 27 MHz step
RSSIST RSSI Sampling Time — — 1/fdev s From Rx ready
RSSTDR RSSI Dynamic Range — 70 — dB Ranging from sensitivity
Note 1: Guaranteed by design and characterization.
2: This reflects the whole receiver bandwidth, as described by conditions for active and passive filters.

DS70651A-page 24 Preliminary © 2010 Microchip Technology Inc.

 MRF89XAM8A
TABLE 4-6: TRANSMITTER AC CHARACTERISTICS(1)
Symbol Description Min Typ Max Unit Condition
RFOP RF Output Power, Programmable — +12.5 — dBm Maximum power setting
with 8 Steps of typ. 3 dB
— -8.5 — dBm Minimum power setting

PN Phase Noise — -112 — dBc/Hz Measured with a 600 kHz

offset at the transmitter output
TXSP Transmitted Spurious — — -47 dBc At any offset between 200 kHz
and 600 kHz, unmodulated
carrier, fdev = 50 kHz
Tx2 Second Harmonic No modulation, see Note(2)
Tx3 Third Harmonic
— — -40 dBm
Tx4 Fourth Harmonic
Txn Harmonics above Tx4
FSKDEV FSK Deviation ±33 ±55 ±200 kHz Programmable
TSTWF Transmitter Wake-up Time — 120 500 µs From FS to Tx ready

TSTWS Transmitter Wake-up Time — 600 900 µs From Stand-by to Tx ready

Note 1: Guaranteed by design and characterization.
2: Transmitter in-circuit performance with SAW filter and crystal.

© 2010 Microchip Technology Inc. Preliminary DS70651A-page 25

MRF89XAM8A
4.1 Timing Specification and Diagram

TABLE 4-7: SPI TIMING SPECIFICATION(1,2)

Parameter Min Typ Max Unit Condition

SPI Configure Clock Frequency — — 6 MHz —

SPI Data Clock Frequency — — 1 MHz —
Data Hold and Setup Time 2 — — µs —
SDI Setup Time for SPI Configure 250 — — ns —
SDI Setup Time for SPI Data 312 — — ns —
CSCON Low to SCK Rising Edge; 500 — — ns —
SCK Falling Edge to CSCON High
CSDATA Low to SCK Rising Edge; 625 — — ns —
SCK Falling Edge to CSDATA High
CSCON Rising to Falling Edge 500 — — ns —
CSDATA Rising to Falling Edge 625 — — ns —
Note 1: Typical Values: TA = 25°C, VIN = 3.3V, Crystal Frequency = 12.8 MHz, unless otherwise specified.
2: Negative current is defined as the current sourced by the pin.

DS70651A-page 26 Preliminary © 2010 Microchip Technology Inc.

 MRF89XAM8A
APPENDIX A: REVISION HISTORY

Revision A (November 2010)

This is the Initial release of the document.

© 2010 Microchip Technology Inc. Preliminary DS70651A-page 27

MRF89XAM8A
NOTES:

DS70651A-page 28 Preliminary © 2010 Microchip Technology Inc.

 MRF89XAM8A
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© 2010 Microchip Technology Inc. Preliminary DS70651A-page 29

MRF89XAM8A
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DS70651A-page 30 Preliminary © 2010 Microchip Technology Inc.

 MRF89XAM8A
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, for example, on pricing or delivery, refer to the factory or the listed sales office.
Example:
PART NO M X T -X a) MRF89XAM8A-I/RM: Industrial temperature
tray.

b) MRF89XAM8AT-I/RM: Industrial temperature

Device Module Module Tape and Temperature tape and reel,
Type Reel Range

Device MRF89XAM8A-I/RM: Ultra Low-Power, Integrated ISM Band Sub-GHz

Transceiver module

Temperature I = -40ºC to +85ºC (Industrial)

Range

© 2010 Microchip Technology Inc. Preliminary DS70651A-page 31

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08/04/10

DS70651A-page 32 Preliminary © 2010 Microchip Technology Inc.