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INTEGRATED
CIRCUITS
Issue
News Report Design Feature Product Technology

Chasing Higher Designing A Rounding Up
Levels Of Integration Low-Power LNA RFIC Amplifiers
Assemble A
VIEW ENGINEERING TV AT ENGINEERINGTV.COM

Wireless is your domain. So don’t just measure it, master it.
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ooting the latest 2G, analyzer for troubleshooting the
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MICROWAVE
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A PENTON PUBLICATION'&#36"3: 70-t/0
NewsReport
34 | Wireless Demands Focus Designers On Integration
Both handset and infrastructure developers are asking for higher
levels of integration and creative ways to preserve performance while
cutting costs and speeding time to market.
38 | RF Primer
Device Processes Differ In Benefits
94 COVER STORY
A wide range of silicon- and GaAs-based semiconductor processes are
available from open foundries, for fabricating low-noise and power
devices and circuits through millimeter-wave
millimeter wave frequencies.
frequencies
USB Devices Simplify

RF/Microwave Testing DesignFeature
A growing number of RF test func- 57 | Low-Power LNA Drops Noise At 2.4 GHz
tions, including signal generation This CMOS amplifier delivers high gain and low noise figure at 2.4 GHz
and control, power measurements, with extremely low power consumption, by means of current-reuse and
common-gate design strategies.
and signal switching, are now avail-
able by plugging a USB device into a 64 | Analyze Phase Noise In A Sampled PLL
personal computer. Part 2 of this three-part series on phase noise in sampled PLLs analyzes
the differences between the behaviors of continuous-time and sampled
loops and how they can be modeled effectively.
Departments
p
74 | Match The Ports Of Differential Devices
13 48 This straightforward approach shows how to match the impedances of
Feedback Company News high-frequency, differential devices both with discrete components and
microstrip circuit elements.
17 50
Editorial People 84 | Optimize Class E Power Amplifiers
By tuning load impedances, it is possible to achieve 60-percent efficiency
22 52 from 1.9 to 2.2 GHz with a Class E amplifier based on a 10-W GaAs
The Front End Educational pHEMT device.
Meetings
26
Microwaves In 54 ProductTechnology
Europe R&D Roundup
98 | IndustryInsight
28 92 Properly Packaging RF Semiconductors
Web Table Of Application Notes Although often overlooked, the package is an inseparable part of an RF/
Contents microwave semiconductor device, contributing to electrical performance
99 and long-term reliability.
42 Infocenter
Crosstalk 100 | ProductTrends
104 RFIC Amps Add Gain Where Needed
46 Editor’s Choice A range of narrowband and broadband gain blocks, low-noise ampli-
Financial Lead fiers, and power amplifier is available in chip and package forms from RF
through millimeter-wave bands.
FEBRUARY 2010 ■ Microwaves & RF visit www.mwrf.com 5

OCTAVE BAND LOW NOISE AMPLIFIERS
Modeld l No. Freq (GHz) Gain (dB) MIN Noise Figure g (dB) Power -out @ P1-dBB 3rdd Order d ICP VSWR
CA01-2110 0.5-1.0 28 1.0 MAX,, 0.7 TYP +10 MIN +20 dBm
d 2.0:1
CA12-2110 1.0-2.0 30 1.0 MAX,, 0.7 TYP +10 MIN +20 dBm 2.0:1
CA24-2111 2.0-4.0 29 1.1 MAX,, 0.95 TYP +10 MIN +20 dBm 2.0:1
CA48-2111 4.0-8.0 29 1.3 MAX,, 1.0 TYP +10 MIN +20 dBm 2.0:1
CA812-3111 8.0-12.0 27 1.6 MAX,, 1.4 TYP +10 MIN +20 dBm 2.0:1
CA1218-4111 12.0-18.0 25 1.9 MAX,, 1.7 TYP +10 MIN +20 dBm 2.0:1
CA1826-2110 18.0-26.5 32 3.0 MAX, 2.5 TYP +10 MIN +20 dBm 2.0:1
NARROW BAND LOW NOISE AND MEDIUM POWER AMPLIFIERS
CCA01-2111
0 2 0.4 - 0
0 0.5 28 0.6 MAX,, 0.4
0 0 TYP +100 MIN +20
20 dBm
d 20
2.0:1
CA01-2113 0.8 - 1.0 28 0.6 MAX,, 0.4 TYP +10 MIN +20 dBm 2.0:1
CA12-3117 1.2 - 1.6 25 0.6 MAX,, 0.4 TYP +10 MIN +20 dBm 2.0:1
CA23-3111 2.2 - 2.4 30 0.6 MAX,, 0.45 TYP +10 MIN +20 dBm 2.0:1
CA23-3116 2.7 - 2.9 29 0.7 MAX,, 0.5 TYP +10 MIN +20 dBm 2.0:1
CA34-2110 3.7 - 4.2 28 1.0 MAX,, 0.5 TYP +10 MIN +20 dBm 2.0:1
CA56-3110 5.4 - 5.9 40 1.0 MAX,, 0.5 TYP +10 MIN +20 dBm 2.0:1
CA78-4110 7.25 - 7.75 32 1.2 MAX,, 1.0 TYP +10 MIN +20 dBm 2.0:1
CA910-3110 9.0 - 10.6 25 1.4 MAX,, 1.2 TYP +10 MIN +20 dBm 2.0:1
CA1315-3110 13.75 - 15.4 25 1.6 MAX,, 1.4 TYP +10 MIN +20 dBm 2.0:1
CA12-3114 1.35 - 1.85 30 4.0 MAX,, 3.0 TYP +33 MIN +41 dBm 2.0:1
CA34-6116 3.1 - 3.5 40 4.5 MAX,, 3.5 TYP +35 MIN +43 dBm 2.0:1
CA56-5114 5.9 - 6.4 30 5.0 MAX,, 4.0 TYP +30 MIN +40 dBm 2.0:1
CA812-6115 8.0 - 12.0 30 4.5 MAX,, 3.5 TYP +30 MIN +40 dBm 2.0:1
CA812-6116 8.0 - 12.0 30 5.0 MAX,, 4.0 TYP +33 MIN +41 dBm 2.0:1
CA1213-7110 12.2 - 13.25 28 6.0 MAX,, 5.5 TYP +33 MIN +42 dBm 2.0:1
CA1415-7110 14.0 - 15.0 30 5.0 MAX,, 4.0 TYP +30 MIN +40 dBm 2.0:1
CA1722-4110 17.0 - 22.0 25 3.5 MAX,, 2.8 TYP +21 MIN +31 dBm 2.0:1
ULTRA-BROADBAND & MULTI-OCTAVE BAND AMPLIFIERS
Model
d l No. Freq (GHz) Gain (dB) MIN Noise Figure (dB) Power -out @ P1-dBB 3rdd Order d ICP VSWR
CA0102-3111 0.1-2.0 28 1.6 Max,, 1.2 TYP +10 MIN +20 ddBm 2.0:1
CA0106-3111 0.1-6.0 28 1.9 Max,, 1.5 TYP +10 MIN +20 dBm 2.0:1
CA0108-3110 0.1-8.0 26 2.2 Max,, 1.8 TYP +10 MIN +20 dBm 2.0:1
CA0108-4112 0.1-8.0 32 3.0 MAX,, 1.8 TYP +22 MIN +32 dBm 2.0:1
CA02-3112 0.5-2.0 36 4.5 MAX,, 2.5 TYP +30 MIN +40 dBm 2.0:1
CA26-3110 2.0-6.0 26 2.0 MAX,, 1.5 TYP +10 MIN +20 dBm 2.0:1
CA26-4114 2.0-6.0 22 5.0 MAX,, 3.5 TYP +30 MIN +40 dBm 2.0:1
CA618-4112 6.0-18.0 25 5.0 MAX,, 3.5 TYP +23 MIN +33 dBm 2.0:1
CA618-6114 6.0-18.0 35 5.0 MAX,, 3.5 TYP +30 MIN +40 dBm 2.0:1
CA218-4116 2.0-18.0 30 3.5 MAX,, 2.8 TYP +10 MIN +20 dBm 2.0:1
CA218-4110 2.0-18.0 30 5.0 MAX,, 3.5 TYP +20 MIN +30 dBm 2.0:1
CA218-4112 2.0-18.0 29 5.0 MAX, 3.5 TYP +24 MIN +34 dBm 2.0:1
LIMITING AMPLIFIERS
Model
d l No. Freqq (GHz) Input
p Dynamic
y Range
g Output
p Power Range g Psat Power Flatness l ddB VSWR
CLA24-4001 2.0 - 4.0 -28 to +10 dBm +7 to +11 dBm +/-
/ 1.5 MAX 2.0:1
CLA26-8001 2.0 - 6.0 -50 to +20 dBm +14 to +18 dBm +/-
/ 1.5 MAX 2.0:1
CLA712-5001 7.0 - 12.4 -21 to +10 dBm +14 to +19 dBm +/-
/ 1.5 MAX 2.0:1
CLA618-1201 6.0 - 18.0 -50 to +20 dBm +14 to +19 dBm +/-
/ 1.5 MAX 2.0:1
AMPLIFIERS WITH INTEGRATED GAIN ATTENUATION
M d l No.
Model N Freq
F (GHz) GGain (dB) MIN Noise
N Figure
F (dB) Power -out @ P1-dBB GGain AAttenuation RRange
g VSWR
CCA001-2511A
00 2 0.025-0.150
0 02 0 0 21
2 5.0
0 MAX,, 33.5 TYP +12 2 MIN 30 dBd MIN 2.0:1
20
CA05-3110A 0.5-5.5 23 2.5 MAX,, 1.5 TYP +18 MIN 20 dB MIN 2.0:1
CA1518-4110A 15.0-18.0 30 3.0 MAX, 2.0 TYP +18 MIN 20 dB MIN 1.85:1
LOW FREQUENCY AMPLIFIERS
M d l No.
Model N F (GHz) G
Freq Gain (dB) MIN NoiseN Figure
F dB Power -out @ P1-dBB 3rd 3 d Order
O d ICP VSWR
CA001-2110
CA001 2110 0
0.01-0.10
01 0 10 18 4.0
4 0 MAX
MAX,, 2.2
2 2 TYP +10
10 MIN +2020 dB
dBm 2.0:1
201
CA001-2211 0.04-0.15 24 3.5 MAX,, 2.2 TYP +13 MIN +23 dBm 2.0:1
CA001-2215 0.04-0.15 23 4.0 MAX,, 2.2 TYP +23 MIN +33 dBm 2.0:1
CA001-3113 0.01-1.0 28 4.0 MAX,, 2.8 TYP +17 MIN +27 dBm 2.0:1
CA002-3114 0.01-2.0 27 4.0 MAX,, 2.8 TYP +20 MIN +30 dBm 2.0:1
CA003-3116 0.01-3.0 18 4.0 MAX,, 2.8 TYP +25 MIN +35 dBm 2.0:1
CA004-3112 0.01-4.0 32 4.0 MAX, 2.8 TYP +15 MIN +25 dBm 2.0:1
CIAO Wireless can easily modify any of its standard models to meet your "exact" requirements at the Catalog Pricing.
Visit our web site at www.ciaowireless.com for our complete product offering.
Ciao Wireless, Inc. 4 0 0 0 V i a P e s c a d o r, C a m a r i l l o , C A 9 3 0 1 2

Tel (805) 389-3224 Fax (805) 389-3629 [email protected]
29
More Q. Less Copper

63.546
These tiny new air core inductors

hhave the highest Q and current handling
in the smallest footprint.
C
Coilcraft’s new SQ air core inductors have unmatched Q
ffactors: most are above 200 in the 1-2 GHz range! That’s 3
ttimes higher than comparably sized 0805 chip coils.
And with their extremely low
DCR, they can handle 4 to 8 times
more current: up to 4.4 Arms.
SQ air core inductors are perfect
for your LC filter and RF impedance
matching applications. They come in
15 values ranging from 6 to 27.3 nH,
Q factors are 3X higher than all with 5% tolerance.
standard chip inductors
These coils
aare significantly smaller than exist-
iing air core inductors. We reduced
tthe footprint by using close-wound
cconstruction and keeping the leads
cclose to the body. The square shape
ccuts the height to as low as 1.5 mm
aand creates flat top and bottom sur-
faces for easy automated handling
and stable mounting.
See how the ultra-high Q and
The square shape and narrow footprint
Th current handling of Coilcraft’s
rreduce board space by 60-75% over new SQ air core inductors can
conventional air core inductors.
maximize the performance of
your next design. For complete specifications and free
y
eevaluation samples, visit www.coilcraft.com/sq
RCOoMPH S
LIANT
www.coilcraft.com 800/322-2645
RF/LO Conversion LO-to-RF
Model Frequency Loss Image Rejection Isolation
Number (GHz) (dB) Max. (dB) Min. (dB) Min.
IMAGE REJECTION MIXERS
IRM0204(*)C2(**) 2 – 4 7.5 18 20
IRM0408(*)C2(**) 4 – 8 8 18 20
IRM0812(*)C2(**) 8 – 12 8 18 20
IRM1218(*)C2(**) 12 – 18 10 18 20
IRM0208(*)C2(**) 2 – 8 9 18 18
IRM0618(*)C2(**) 6 – 18 10 18 18
IR1826NI7(**) 18 – 26 10.5 18 20
IR2640NI7(**) 26 – 40 12 18 20
RF/LO Conversion Balance LO-to-RF

Model Frequency Loss Phase (±Deg.) Amplitude (±dB) Isolation
Number (GHz) (dB) Max. Typ./Max. Typ./Max. (dB) Min.
I/Q DEMODULATORS
IRM0204(*)C2Q 2 – 4 10.5 7.5/10 1.0/1.5 20
IRM0408(*)C2Q 4 – 8 11 7.5/10 1.0/1.5 20
IRM0812(*)C2Q 8 – 12 11 5/7.5 .75/1.0 20
IRM1218(*)C2Q 12 – 18 13 10/15 1.0/1.5 20
IRM0208(*)C2Q 2 – 8 12 7.5/10 1.0/1.5 18
IRM0618(*)C2Q 6 – 18 13 10/15 1.0/1.5 18
IR1826NI7Q 18 – 26 13.5 10/15 1.0/1.5 20
IR2640NI7Q 26 – 40 15 10/15 1.0/1.5 20
RF Conversion Carrier Carrier Suppression

Model Frequency Loss Suppression Carrier - Fundamental IF
Number (GHz) (dB) Max. (dBc) Min. (dBc) Min.
IF DRIVEN MODULATORS
SSM0204(*)C2MD(**) 2 – 4 9 20 20
SSM0408(*)C2MD(**) 4 – 8 9 20 18
SSM0812(*)C2MD(**) 8 – 12 9 20 20
SSM1218(*)C2MD(**) 12 – 18 10 20 18
SSM0208(*)C2MD(**) 2 – 8 9 20 18
SSM0618(*)C2MD(**) 6 – 18 12 20 18
For full data sheets on the

products shown, please visit MODEL NUMBER OPTION TABLE
(*) LO/IF P1 dB C.P. (**) IF FREQUENCY
www.miteq.com/adinfo
Add Letter Power Range (dBm) (Typ.) Add Letter OPTION (MHz)
L 10 – 13 dBm +6 A 20 – 40
For Carrier Driven Modulators, M 13 – 16 dBm +10 B 40 – 80
please contact MITEQ. H 17 – 20 dBm +15 C 100 – 200
Q DC – 500 (I/Q)
RFMD.
D
®
Broadband High and Medium Power SPDT

Switch Family
The RFMD family of broadband single-pole double

throw (SPDT) switches is designed for general purpose
applications which require very low insertion loss and
medium to high power handling capability. The RF3021
is a reflective high-power, high isolation switch featuring
an on-chip inverter for single positive supply. The RF3023
and RF3024, reflective medium-power broadband SPDT
switches, offer low insertion loss. Both switches are identical
with the exception that their switching logic is reversed. The
RF3025, a high-power broadband absorptive SPDT switch,
features an on-chip inverter for single positive supply. Each
switch is fabricated with 0.5μ GaAs pHEMT process and
comes in a compact 3 x 3 mm or SC-70 QFN package.
SPECIFICATIONS
Part Freq Range PO.1dB Insertion Loss Isolation Control Package Size Sample
Number (MHz) (dBm) (dB) (dB) Interface (mm) Availability
RF3021 10 to 6000 27 0.4 to 0.6 >50 GPIO QFN 3 x 3 July 09
RF3023 10 to 3000 30 0.2 to 0.4 25 GPIO SC70 July 09
RF3024 10 to 3000 30 0.2 to 0.4 >50 GPIO SC70 July 09
RF3025 10 to 6000 25 0.5 to 0.6 >50 GPIO QFN 3 x 3 July 09
FEATURES
• 10 MHz to 6 GHz operation
• Very low insertion loss
• 2.5 V minimum supply voltage
• 0.25 to 0.5 dB insertion loss at 1 GHz
• 48 to 50 dBm IP3 at 3 V
Order RFMD products online at www.rfmd.com/rfmdExpress

/ p
For sales or technical support, contact your authorized local sales representative (see www.rfmd.com/globalsales).
/g
Register to receive RFMD’s latest product releases with our Email Component Alerts at www.rfmd.com/emailalert
/ .
7628 Thorndike Rd., Greensboro, NC 27409-9421 USA • Phone 336.664.1233 • Fax 336.931.7454
These products comply with RFMD’s green packaging standards.

RFMD® is a trademark of RFMD, LLC. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2009 RFMD.
feedback
To The Editor: is a contest only open to advertisers in make the list because they have intro-
the magazine, or if a small company duced something that is practical yet
In reading your December 2009 issue with a limited budget, such as ours, innovative. And that is the key to what
and the report on the “Top Products could be considered for a top product, makes the list: that the list contains what
of 2009,” I was intrigued by the say in 2010? our editors consider the most innova-
diversity of the products on the list, Al Ternate tive, highest-performance, and practical
everything from the smallest ICs and Configuration Analysis Management products introduced during the year.
low-cost voltage-variable attenuators Danbury, CT Not all are flashy or expensive, but all
(VVAs) to the most expensive vector make a contribution in some way to
network analyzers (VNAs). Yet, on the Editor’s Note: this industry, and across any number
same list with these fancy VNAs were of technologies, including components,
low-cost power meters built into the Thank you for reading the story and for devices, software, systems, and test
shell of a Universal Serial Bus (USB) your interest in our Top Products of The equipment. It is not a perfect list, but
device. Although the list seemed to Year selections. To clarify a few of your it does generate interest, from those
be heavy on test equipment, it also points: First of all, not every product who are on it and those who want to
contained components and devices. on the list represents an advertiser in be on it, no matter how large or small
In reading the story, I was not able to the magazine. Many companies making the company.
find an explanation or justification for this annual list have never advertised in
how these products were selected by this magazine and perhaps never will,
Microwaves & RFF welcomes mail from its
your editors, or what made them so but advertising in the magazine is not readers. Letters must include the writer’s
special. I would appreciate some kind a prerequisite for consideration as a name and address. Please write to:
of explanation on the rationale used Top Product of The Year. Second, not Jack Browne, Technical Director
[email protected]
to determine what is a “Top Product.” all of the companies mentioned in the Microwaves & RFF tPenton Media, Inc.
And I would also like to know if this article are large. Often startup companies 8UI4Ut/FX:PSL /:

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IF/RF MICROWAVE COMPONENTS 402 rev L
TINY TTO
OUGHEST MIXE
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IF/RF MICROWAVE COMPONENTS 428 rev D
from the editor
What's In
The Package?
A
t RF and microwave frequencies, the more perti-
nent question often is, “What is the package?” At
higher frequencies, the package can have as much
effect on the performance as the circuit it houses and
it is better to think of the package and the device as
Perhaps one of inseparable. Years ago, custom packages were needed to
the major boons ensure that the performance of microwave circuits was
not “thrown away” once in a package. For applications
to device and IC where protecting the circuit was tantamount to success,
designers is the such as in aerospace and military systems, package
increasing number design specialists such as StratEdge (www.stratedge.
com) built strong reputations with high-reliability
of package models metal-ceramic packages for use past 40 GHz. The
in high-frequency company continues to custom design packages that,
while not inexpensive, provide the highest performance
design programs. levels possible at microwave frequencies.
Of course, cost pressures have forced many device
and circuit designers to seek more standard, lower-cost packaging
solutions. Companies such as Mini-Circuits (www.minicircuits.com)
have long balanced the tradeoffs between cost and performance in
drop-in and surface-mount RF/microwave packaging. The firm has
kept pricing reasonable by choosing packages that are low in cost
but don’t compromise performance.
The ideal package would be electrically “invisible” with lossless
interconnections between the circuit within and the outside world. It
would also afford protection against contamination, moisture, and
other environmental factors. The interconnections would be practical,
with ground connections and electrical paths when mounted with a
variety of automatic assembly equipment or even by hand.
There is no “ideal” package, of course, and few come close. But
circuit and component designers have more packaging options than
ever, with excellent high-frequency performance. Most of the newer
standard packages are developed for small footprints and standard
die sizes, encouraging IC and device designers to follow standard
foundry rules for pad placements and other circuit considerations.
Such factors also simplify the use of standard wafer probes and test
equipment when it is time to characterize die before packaging.
Perhaps one of the major boons to device and IC designers faced
with evaluating package options is the increasing number of package
models in high-frequency design programs, such as the Advanced
Design System (ADS) from Agilent Technologies (www.agilent.com)
and Microwave Office from AWR (www.awr.com). These software
tools essentially allow designers to “package” their circuits in the
computer before trying the real thing, helping to tame those difficult
tradeoffs whenn finding a housing for that “perfect” cir
circuit.
Technical Director
2010 ■ Microwaves & RF 17

Penton Publication
Technical Director
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18 visit www.mwrf.com FEBRUARY 2010 ■ Microwaves & RF

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Smart-Card Market Players Join Forces To Advance Applications

LONDON, UK—Together with chip suppliers Infineon Technolo- addition to providing higher-performance and advanced sys-
gies AG and INSIDE Contactless S.A., smart-card manufacturers tem security for public-transport applications, it will ensure
Giesecke & Devrient GmbH (G&D) and Oberthur Technologies that multiple sources are available for chip products. Through
S.A. have launched an industry initiative to provide a security independent testing, the open standard will provide optimized
solution for next-generation, smart-card-based public-transport interoperability to enable simple and fast integration into public-
applications. The solution will build on an open standard that transport schemes. The first emulation chips and transportation
is being implemented by the four partner companies. Eventu- smart cards using this standard are scheduled to be available by
ally, that standard will be governed by an independent body. the end of this year.
Companies that are active in the smart-card arena—providers The industry initiative is based on groundwork performed
of chips, smart cards, application-specific operating software, by Infineon, which has developed a hardware-based securi-
reader devices, and transportation systems—are invited to ty system suited for public-transportation smart-card appli-
join the initiative for the advancement of more secure public- cations. INSIDE Contactless has signed an agreement with
transportation applications. Infineon to implement the security scheme for its chip platforms.
The new standard promises to bring many key benefits to In addition, G&D and Oberthur Technologies have agreed to
public-transport agencies and smart-card industry players. In develop public-transport applications based on the scheme.
visit www.mwrf.com FEBRUARY 2010 ■ Microwaves & RF

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and 75 Ω models these surface-mount and coaxial case with SMA connectors. Applications include
low-cost V VAs require no external components automatic-level-control (ALC) circuits, gain and
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IF/RF MICROWAVE COMPONENTS 449 rev C
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ffront end
th
“
Partnership Results In High-Permeability
Depending on the Magnetic Shielding Tubing
welding method WARWICK, RI— —A.T. Wall Company has partnered
used, this tubing’s with the MuShield Company to develop the

MμShield seamless, high-permeability magnetic
shielding capability shielding tubing that ranges to 20 feet in length.
promises to be 20 Depending on the welding method used, this and attenuation
tubing’s shielding capability promises to be uniformity throughout
to 30 percent better 20 to 30 percent better than a formed and welded its walls and length. In addition, the tubing
than a formed and product. The tubing can hold outside and inside claims to decrease machining times signifi-
diameters to +/-0.002 inches along with wall cantly while saving on material costs, which
”
welded product. thicknesses within 0.002 inches. The seamless is key for applications with tight tolerances on
tubing is available with wall thicknesses from machined details and roundness. The product is
0.005 through 0.250 inches. Sizes range from well suited for applications that require preci-
outside diameters of 0.080 to 2.625 inches. sion-machined magnetic shield components or
The tubing meets the standards of ASTM long lengths of small-diameter tubing. Typical
A753-08, standard specification for wrought applications include aircraft instrumentation,
nickel-iron soft magnetic alloys. It vows to medical and surgical equipment, oil explora-
provide complete shielding homogeneity tion, and imaging equipment.
Kudos
BROOKLYN, NY—Gloria and Harvey Kaylie were honored at Technology Innovation of the Year Award for its femtocell
the OHEL annual dinner on February 21, which celebrated baseband processor solutions. The research firm noted that
the agency’s 40-year anniversary. Harvey is the President and the PRC6500 is the highest-capacity baseband processor for
CEO of Mini-Circuits. He and his wife are benefactors of the UMTS/HSPA+ femtocells, supporting up to 16 simultaneous
Marvin Kaylie Center at OHEL, which is named in honor of users and 21.6/5.76 Mb/s HSPA+ data rates with sniffing and
Harvey’s brother, and the soon-to-be-dedicated OHEL CAMP. embedded security capabilities.
OHEL Bais Ezra, founded in 1969, is a social-services agency BOSTON, MA—Harris Corp. has announced that its P5400 800-
that delivers programs and services for individuals and families MHz Project 25 (P25) portable radio is the first to meet the
with developmental or psychiatric disabilities. Department of Homeland Security’s P25 Compliance Assess-
STATE COLLEGE, PA—State of the Art, Inc. (SOTA) celebrated ment Program (CAP) process. The P25 CAP is a voluntary
its 40th anniversary. The company was founded in 1969 as program managed in partnership with the National Institute
a consulting business specializing in thick-film technology of Standards and Technology’s (NIST) Office of Law Enforce-
seminars. Manufacturing began in 1972 and displaced the ment Standards and a coalition of emergency responders and
consulting business. The firm developed the nickel barrier communications-equipment manufacturers.
in 1980. In 1987, it became the first MIL-PRF-55342 QPL SANTA CLARA, CA— —Japan’s Yamagata University has select-
qualified S-level manufacturer. ed Agilent Technologies’ SystemVue software for use in its
HILLSBORO, OR— —TriQuint Semiconductor, Inc. highlighted the emerging-communications physical-layer (PHY) research. The
success of CuFlip, its patented flip-chip interconnect technol- electronic-system-level software is expected to reduce the time
ogy, noting shipments of 100 million units. required for design and verification of the team’s communica-
LAWRENCE, MA—Aeroflex/Metelics received a manufacturer’s tion PHY system by up to 30 percent.
certification in compliance with the MIL-PRF-19500N slash WESTFORD, MA—Laser Services, Inc. is celebrating its 30th
sheets by the Defense Supply Center Columbus (DSCC) for anniversary. Established in 1979 by Bruce and June Beauchesne,
its small-signal switching diodes. Copies of the notification of the company is owned and operated today by Gregory Sexton,
qualification letter from DSCC along with the product data President and CEO. In the past 30 years, the firm has contrib-
sheets are available at www.aeroflex.com/metelics. uted to the NASA Chandra Telescope and the CERN particle
RA'ANANA, ISRAEL—Percello Ltd. has announced that Frost & accelerator. It also perfected solder preforms that enabled the
Sullivan has presented the company with the 2009 European design of microwave assemblies used in anti-IED devices.
24 FEBRUARY 2010 ■ Microwaves & RF

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4PVUIUI4USFFUt1IPFOJY ";
1IPOFt'BY
'
Microwaves
Paul Whytock, Eu
Europe
ur pean Corresp nden
HARDWARE AND
PERFORMANCE
D SOFTWARE
ENHANCE CELLU
ULAR
Chip Helps Manage M2M Mobile Communications
G RLAND—Smart-card
ENEVA, SWITZERLAND S t
integrated-circuit (IC) maker STMi-
croelectronics has developed a low-power
d Applications
A l using M2M capabilities
include the European eCall road-accident
alert system, which is planned for launch
processor chip dedicated to managing this year (see Figure). That system allows
SIM data for machine-to-machine (M2M) vehicles to automatically inform rescue
cellular communications. Recent research services of the location and details of
is suggesting that this expanding market an accident. To communicate with the
could account for over 200 million mobile cellular network, the ST32-M has the
connections by 2013. The ST32-M IC same capabilities and security features as
family combines the advantages of non- the company’s existing ST32 smart-card
proprietary processor architecture and This IC series is used in M2M communica- processor, which is used in cell-phone SIM
high-density, low-power, embedded-Flash tions applications like the European eCall cards. The ST32-M is designed explicitly
memory, enabling machines to connect to road-accident alert system, which allows for M2M applications. By operating from
cellular networks, authenticate themselves, vehicles to automatically inform rescue -40° to +105°C, it allows M2M equipment
and communicate automatically. services of the location of an accident. to function in harsh environments.
Shooting Bouncing Ray Method Is At Solver’s Roots Equalizer Design Raises

Uplink Performance
D ARMSTADT, GERMANY—CST Microwave Studio (CST MWS) now incor-
porates an asymptotic solver that is based on the Shooting Bouncing Ray
method—an extension to physical optics. The integration of CST Microstripes C AMBRIDGE, ENGLAND— To improve
Long Term Evolution (LTE) uplink
into the CST Studio Suite should facilitate access to features that are par- performance, Cambridge Consultants has
ticularly valuable in EMC simulations, such as compact models and Octree developed Dual-domain Uplink Equaliser
meshing, within the design environment. The software is capable of tackling for LTE (DUEL) technology. DUEL is
simulations covering thousands of wavelengths, as might be done in radar- designed as an algorithmic and digital-
cross-section (RCS) analysis. signal-processing (DSP) extension to LTE
CST MWS’ frequency-domain solver features the firm’s new sensitivity base-station receiver designs. It requires
analysis approach. After the introduction of true geometry adaptation with no changes to handsets, as the LTE uplink
version 2009, the inclusion of third- and mixed-order elements should enable supports the transfer of information from
further increases in simulation efficiency and speed. In addition, the CST MWS users’ terminals to the network.
time-domain solver includes functional enhancements, such as arbitrary-order Although LTE promises to deliver
dispersive material modeling and domain decomposition for cluster computing high data transfer rates, these can only
(also in combination with GPU computing). be achieved under perfect channel condi-
tions, such as low user mobility (walking
Femtocell Reference Platform Is Under Development speed or lower) and high diversity (low
G UILDFORD, ENGLAND—A flexible, high-performance reference platform

for femtocell designs is being developed through a collaboration between
Lime Microsystems and Percello. The platform combines Percello’s PRC6xxx
correlation) between receive paths at the
base station.
Cambridge Consultants’ patent-pend-
baseband IC with Lime’s multiband, multi-standard RF transceiver IC, the ing DUEL receiver vows to improve the
LMS6002. It will be used to develop femtocell designs for high-data-rate performance of the uplink in all channel
UMTS/HSPA+ air interfaces. conditions. Its algorithms take advantage
The PRC6xxx IC from Percello is a baseband processor for third-generation of properties of the LTE uplink signal path
(3G) femtocells. It supports up to 16 simultaneous CS/PS/HSPA calls with to optimize signal fidelity. As a result, it
throughput of 21.6/5.76 Mb/s HSPA+ data rates. It also supports extended claims to work well even when the signals
cell range for enterprise and outdoor applications. The IC has the ability to received by each base-station antenna are
cascade two or more PRC6xxx ICs to support 32 and 64 simultaneous users. highly correlated.

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Design Feature
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Product Technology
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Microwave Testers
dating back to p. 99
October 2002. Link To The Industry’s

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Pa ul Why hytotock
to ck. Pa Paulu willl reguulaarrlly up upda daate our
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ro m ththee Eu Eurro-
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W I R E L E S S I N T E G R AT I O N
NewsReport
Wireless Demands Focus

Designers On Integration
Both handset and infrastructure developers are asking for higher
levels of integration and creative ways to preserve performance while
cutting costs and speeding time to market.
customers want more processing capabil- products in advanced bipolar processes.
NANCY FRIEDRICH ity in a given volume. In many instances, Customers then apply digital control
Editor
customers expect a system cost reduction functions within their systems. Wilson
as multiple functions are incorporated in points out that newer BiCMOS processes
I
ntegration has been a key to the a single device. There is also the reduced are now being used, which have superior
advancement of wireless com- cost of assembly and test as well as actual analog performance and the additional
munications, leading to smaller design work. If all of the tuning, filtering, capability to integrate digital control
devices with more functionality. biasing, etc. is handled on the chip, there functions on chip. CMOS processes also
Although the mobile handset is at is less work required to be done by the are being utilized for highly integrated RF
the forefront of these trends, cost user. This can also improve the customer’s devices, often using digital processing to
savings and time to market are among time to market. Performance of discrete overcome RF performance limitations.
the drivers pushing for higher This past fall, the firm debuted
integration in cellular infra- RF mixers and modulators that
structure as well. As wireless enable high-density radio cards
integrators strive for more func- while increasing capacity and
tions in smaller packages, the speed for Long Term Evolution
trend in ICs continues toward (LTE) and fourth-generation
higher levels of analog, digital, (4G) base stations (Fig. 1). The
and high-frequency integration ADRF660x series of mixers and
in a single device. To compli- ADRF670x series of modula-
cate matters, both handset and tors combine multiple discrete
infrastructure integrators are 1. This RF modulator and downconverter house an integrated PLL, functional blocks into a single
trying to fit multiple wireless which is a multi-modulus fractional-N synthesizer designed to support device. The four ADRF660x
standards in one system. To LTE’s 100-kHz channel raster. products integrate an active RF
balance these various demands, mixer, RF input balun for single-
creative design techniques are leverag- RF components will generally be better ended 50-Ω input, and a PLL synthesizer
ing advanced technology resources and than that of a more integrated device. with integrated voltage-controlled oscil-
expertise in amplifiers, transceivers, But in many applications,‘good enough’ lator (VCO) in one package. The active
and other devices to create more highly performance is acceptable—as long as mixer provides a voltage conversion
integrated systems that do not sacrifice price targets are achieved. As analog gain of 6 dB. The differential IF output
performance. and high-performance RF devices make operates to 500 MHz. The ADRF6601
Dale Wilson, Analog Devices’ (www. more use of CMOS processes, there are receive mixer operates from 300 to 2500
analog.com) Senior Marketing Manager, more opportunities to incorporate digital MHz with an internal LO range of 750 to
RF Group, states, “Size is an obvious control functions as well.” 1160 MHz. It reaches 1-dB compression
consideration and most important in To handle such increased levels of with +12 dBm input power and achieves
handheld or portable applications but integration, ADI has traditionally imple- an input third-order intercept point of
also desired in larger systems, where mented many of its high-performance RF +30 dBm. The mixer exhibits 12 dB

NewsReport
single-sideband (SSB) noise. nujira.com) and RF Micro Devices, Inc.

Each of the four ADRF670x modu- (www.rfmd.com). The firms assert that
lators integrates an analog in-phase/ wireless-infrastructure vendors will be
quadrature (I/Q) modulator, RF output able to leverage this PA to develop a single
switch, and phase-locked-loop (PLL) multimode, broadband RF front end that
with integrated VCO in a single RFIC. can be deployed to meet various transmis-
The modulator input bandwidth is 500 sion standards anywhere in the world.
MHz. The ADRF6701 I/Q modulator’s The PA design, which targets 4G base sta-
PLL/synthesizer uses a fractional-N PLL tions, integrates RFMD’s RFG1M09180
to feed a multiplied-by-two version of the 180-W gallium-nitride (GaN) broadband
LO signal to the I/Q modulator. The PLL power transistor with Nujira’s Coolteq.h
reference input accepts signals from 12 envelope-tracking power modulators.
to 160 MHz. The modulator covers an Using just one RFG1M device with a
output frequency of 400 to 1300 MHz. Coolteq.h module, the RFMD Nujira RF
It boasts an internal LO frequency range front end transmits over a 728-to-960-
of 750 to 1160 MHz. The device provides MHz band. It delivers average output
+14 dBm output power at 1-dB compres- power of +45 dBm with over 50 percent
sion and +29 dBm output third-order efficiency. Using GaN devices currently in
intercept point. It offers a noise floor of development at RFMD, the two compa-
−158 dBm/Hz. nies expect to cover cellular frequencies
2. This transceiver integrates an autodirection from 700 to 2600 MHz with just three
PAs FEEL THE SQUEEZE output that handles bus arbitration in tower- broadband PAs.
As 3G wireless networks are completed mounted equipment without requiring a By using carbon nanotubes as heat-
and a transition is being made to 4G microcontroller. dissipation material in PA transistors,
systems, the use of distributed archi- Fujitsu Laboratories Ltd. (www.fujitsu.
tectures and active antenna systems is with high peak-to-average ratios and com) has successfully operated high-
driving the need for smaller and more stringent spectral-growth specifications. frequency, 100-W-class, flip-chip ampli-
efficient transceiver and PA implemen- Scintera Networks, Inc. (www.scintera. fiers that also target the mobile base
tations. For example, the MAX9947 com) is hoping to provide an answer with stations designed for 4G systems. To
from Maxim Integrated Products (www. the SC1887 adaptive RF PA linearizer achieve high frequency, output, and ampli-
maxim-ic.com) promises to simplify the (RFPAL) system-on-a-chip (SoC), which fication, the firm developed “dual-side
implementation of Antenna Interface performs complex signal processing in the heat-dissipation” technology, in which
Standards Group (AISG)-compliant base RF domain. The SC1887, which is fab- heat is dissipated through both sides
stations and tower-mounted equipment ricated in standard CMOS, implements of the transistor chip. According to the
(Fig. 2). The single-chip transceiver packs the firm’s Gigahertz Signal Processing company, this technology also enables
a transmitter, receiver, and active filters technology (GSP). This programmable the reduction of the transistor chip size
into a 3-x-3-mm TQFN package. analog-signal-processor (ASP) platform to less than two-thirds the size of existing
The transmitter includes an OOK vows to provide the advantages of digital transistor chips.
modulator, a bandpass filter that is com- signal processing (DSP) at the reduced Using the flip-chip structure, carbon-
pliant with the AISG spectrum-emission power and size of analog solutions. nanotube bumps were run between the
profile, and an output amplifier. The The SC1887 RF in and RF out solution electrode on the top of the amplifier and
receiver includes a bandpass filter with supports modular PA designs that are the substrate. In addition, a heatsink was
200-kHz bandwidth centered at 2.176 independent of the baseband and trans- affixed to the reverse side of the amplifier
MHz center frequency. It also includes ceiver subsystems. Consuming less than to draw heat away from the amplifier
an OOK demodulator and a compara- 600 mW, the SC1887 is well suited for from both its front and back sides. To
tor for reconstructing the digital signal. lower-power transmitters.The SoC covers attain high amplification rates at high
The MAX9947 offers input dynamic 698 to 1000 or 1800 to 2800 MHz. It frequencies, the interconnects need to
range from −15 to +5 dBm at 50 Ω. Its supports an input signal bandwidth to be at least 10 μm long. Fujitsu used an
resistor-adjustable output power, which 60 MHz with a peak-to-average ratio of aluminum-iron (Al-Fe) film to grow car-
spans +7 to +12 dBm, compensates for 10 dB. The chip promises to provide an bon nanotubes to a length of 20 μm or
losses in external circuitry and cabling. adjacent-channel-leakage-ratio (ACLR) longer perpendicular to the board. The
The transceiver supports all AISG data improvement to 26 dB. new technology promises to improve
rates: 9.6, 38.4, and 115.2 kb/s. Enhanced efficiency also is the driver heat dissipation by an increase of 1.5X
On the PA side, designers are faced of a PA development from Nujira (www. compared to conventional methods.

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MODEL FREQ.
FR GAIN POUT NOISE FIG. PRICE
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these super wideband amplifiers are ideal as workhorses khorses for a NNote: Alternative heat-sink must be provided to limit maximum base plate temperature.
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r Engine
IF/RF MICROWAVE COMPONENTS 440 rev E
NewsReport
This work underscores the standard CMOS process. This

concern of many mobile-com- Antenna PA houses the transceiver
munications design engineers together with the baseband.
for effective thermal manage- In a 3-x-3-mm package, the
LLTE band 7
ment. According to Homay- JAV5001 integrates circuitry
oun Ghani, Toshiba America for power regulation, PA bias,
Electronic Components’ (www. TRITIUM PPA-duplexer module input and output matching, and
toshiba.com) Development power control. The PA oper-
Manager, Microwave, RF, and ates on a single voltage supply.
Small Signal Devices, higher- During W-CDMA modulation,
efficiency designs require a ASM with Antenna it boasts linear output power
smaller heatsink, which enables SPxT
x to +28.0 dBm. The PA exhib-
the use of smaller and lighter 3G/4G its gain ranging from 5 dB in
devices in mobile-systems transceiver/ low-power mode to 27 dB in
applications. He notes, “The baseband high-power mode. It provides
resulting challenges are mainly an electro-static-discharge
the heat generated from these (ESD) HBM rating of 2.5 kV.
small devices and how to prop- Its adjacent channel leakage
erly design a system capable ratio (ACLR) is typically −40
of handling that heat.” Ghani dBc with a maximum of −38
points out that some systems dBc with a ±5-MHz offset.
integrators are using liquid- High band The JAV5001 offers 40 percent
cooling techniques. power-added efficiency (PAE)
Cellular handsets provide Converged PA
P in high-power mode and 28
(multi-mode/multiband)
their own set of integration Low band percent PAE in medium-power
obstacles. According to Shane mode. It features maximum
Smith, TriQuint’s Senior Direc- 3. By using this converged module in place of multiple discrete noise of −150 dBm/Hz from
tor for Marketing, Mobile modules, handset manufacturers can save precious board space for 2400 to 2484 MHz to −147
Devices, “For analog integra- features like Wi-Fi, GPS, Bluetooth, cameras, and FM radios. dBm/Hz in the RX band with
tion, semiconductor companies a 190-MHz offset.
are developing power amplifiers that front-end board area. As more high-frequency functions are
deliver multi-mode, multiband opera- Although CMOS offers many compel- handled or assisted by digital circuitry, the
tion. Today, five bands of WCDMA with ling benefits in terms of cost-effective biggest obstacle is probably to maintain
EDGE and GMSK modulation requires integration, CMOS PAs simply have not analog performance. As stated by Ramesh
our customers to purchase six PAs. In been able to match or surpass the perfor- Ramchandani, Director, Marketing &
2010-2011, customers will be able to mance of gallium-arsenide (GaAs) PAs in Business Development at TowerJazz
purchase one PA module with the same handsets. Patrick Morgan, Javelin Semi- (www.towerjazz.com), “IC designers
functionality.” conductor’s (www.javelinsemi.com) Vice driving a true integration of both digital
To target 3G/4G converged handset President of Marketing, explains,“Axiom and analog functions onto a single chip
architectures, TriQuint Semiconductor Microdevices developed a 2G PA archi- are finding it increasingly difficult to get
(www.triquint.com) provides the TriQuint tecture based on the distributed active the performance out of their integrated
unified Mobile Front-end architecture transformer (DAT), which is a primarily chip as they would out of an analog
(TRIUMF; Fig. 3). The module provides analog technique. ACCO Semiconductor chip. Many engineers are getting creative
an RF footprint that combines GSM, developed a new transistor technology in finding circuit solutions to compro-
EDGE, WCDMA, and HSPA transmit for PAs called MASMOS. In summary, mise for the lack of analog performance.
functionality. In doing so, it promises to companies attempting to solve the CMOS However, one of the drawbacks here is
offer up to a 50-percent size reduction PA challenge have followed three paths: the extra circuitry that must be included
over standard multiband module solu- digital signal processing, aggressive ana- that can require additional capacitors,
tions. By combining four separate PA log architecture derivations, or making resistors, inductors, and other passive
modules into one, TRIUMF cuts handset significant process changes to the standard elements to bring the performance to
assembly cost. It also miniaturizes the RF CMOS flow.” par.” The decades-old quandary still
system, as a single converged PA module The JAV5001 PA from Javelin, which thrives: Integration is sorely needed, but it
coupled with antenna switching, mode/ targets W-CDMA and HSPA wireless cannot be gained at the price of even a
band, switch and duplexers will reduce communications, is implemented in a little performance.

,8602,3 0-54+0/3is an innovator of
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P R O C E S S T E C H N O LO G I E S
RF Primer
Device Processes
Differ In Benefits
A wide range of silicon- and GaAs-based semiconductor processes
are available from open foundries, for fabricating low-noise and power
devices and circuits through millimeter-wave frequencies.
JACK BROWNE cesses, particularly for millimeter-wave and military funding has supported
Technical Director
applications. Along the way, commercial substrate materials such as GaN and
silicon foundries, encouraged by the SiC with potentially higher power densi-
S
emiconductor processes have pressing needs of computers and tele- ties. In recent cases, the two materials
their differences. Some pro- communications for faster processing have been combined (GaN deposited
vide high power densities; speeds and data rates, have quietly eased on SiC) to achieve high-voltage devices
some excel in integration of silicon CMOS technologies well into the capable of high output-power densities
different functions. Under- millimeter-wave range. With so many with good linearity.
standing the differences process choices, it is easy to wonder Before low-cost silicon semiconduc-
is helpful not just to those choosing exactly how they differ and why one tor processing is written off, it should
foundry services, but for anyone trying would choose a particular process. be noted that much recent development
to understand the capabilities of differ- GaAs metal-epitaxial-semiconductor work has been in scaling down the
ent integrated circuits (ICs). field-effect transistors (MESFETs) have features of silicon CMOS and BiCMOS
More than three decades ago, a point been the mainstay of both low-noise processes to achieve cutoff frequencies
of debate in RF/microwave semiconduc- and large signal solid-state RF and beyond 100 GHz. Also, the use of later-
tors had to do with whether not only if microwave designs for well over 30 ally diffused metal-oxide-semiconductor
a fledgling technology such as gallium years. The semi-insulating material (LDMOS) silicon processes has resulted
arsenide (GaAs) could improve upon offers a dielectric constant (12.9) that in robust transistors capable of output-
vacuum-tube devices, but whether GaAs is compatible with microstrip struc- power levels rivaling the best reported
was even an improvement upon silicon tures in microwave-integrated-circuit results for GaN and SiC devices. In
bipolar technology. As with many new (MIC) designs and supports operating addition, processes such as silicon Bi-
high-frequency semiconductor technol- frequencies into the millimeter-wave CMOS readily support the integration
ogies, GaAs owed its early development region. The initial process technol- of RF, analog, digital, and mixed-signal
to military funding, but gained a boost ogy has been extended over the years functions on a single die.
from commercial applications, such as with heterojunction-bipolar-transistor Unfortunately, silicon has poor insu-
television-receive-only (TVRO) satellite (HBT) and high-electron-mobility- lating properties compared to GaAs, so
systems in the 1980s and cellular/wire- transistor (HEMT) configurations that transmission lines tend to suffer
less technology in the 1990s. that take advantage of the material’s high losses at high frequencies. Even
Similarly, military investments fos- basic electron mobility characteristics in silicon germanium (SiGe) processes,
tered the early growth of newer high- for improved gain at higher frequen- which have been used to fabricate HBTs
frequency process technologies, such cies. But, in spite of impressive invest- for many wireless applications, the
as gallium nitride (GaN) and silicon ments in time and capital, GaAs process performance of these devices is limited
carbide (SiC). Not to be forgotten in technologies still fall short in terms of in terms of power and noise figure
those years of development were similar output power per device compared, for compared to GaAs devices (albeit at
defense-related investments in indium example, to vacuum-tube electronics. lower cost). And the cost of extending
phosphide (InP) semiconductor pro- As a result, much recent commercial the high-frequency performance of SiGe

W
NE
HI-REL MIXE
XERS
For mission cri
r tic
t al app
p lilcati
tions
150 kHz to 4 GHz
US Army Photo
U.S. Navy Photos
TUF -R
R
E-
D
CERAMIC DIODE QUAD

A
Plastic
Case I STOCK from
IN
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are built to handle tough applications in hostile environments. from UHF/VHF tactical radios to cellular basestations.
Featuring hermetically sealed ceramic quads, rugged ADE-R
mixers are supplied in durable plastic packages while For your mission-critical applications, count on rugged
reliable TUF-R mixers are enclosed in laser welded shielded surface-mount ADE-R and TUF-R mixers. With a wide
metal housings. ADE-R and TUF-R mixers cover a frequency selection of models, you'll find a high-rel mixer optimized
range from as low as 150 kHz through 4 GHz, with models for your requirements. Visit the Mini-Circuits website at
for a wide selection of LO drive requirements, including +3, www.minicircuits.com for comprehensive performance
+7, +10, and +13 dBm. Both versions offer outstanding data, circuit layouts, and environmental specifications.
multi octave wideband performance featuring conversion Order online for next day shipment.
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r Engine
IF/RF MICROWAVE COMPONENTS 450 Rev E
P R O C E S S T E C H N O LO G I E S
RF Primer
processing has been a reduction in break- microsystems.com), IHP Microelectron- impressive high-power devices have been
down voltage and, consequently, output ics (SiGe, www.ihp-microelectronics. fabricated, notably by companies such as
power (as demonstrated by IBM’s SiGe com), JAZZ Semiconductor (RF CMOS, Microsemi (www.microsemi.com) and
process enhancements over the last few SiGe, www.jazzsemi.com), and Taiwan Cree (www.cree.com) for pulsed radar
years). The number of silicon foundries is Semiconductor Manufacturing Com- applications. Unfortunately, the wafer
large worldwide, and includes such firms pany Ltd. (TSMC, www.tsmc.com). sizes are relatively small (to about 3 in.
as austriamicrosystems (www.austria- On silicon carbide, however, some diameter) compared to traditional sili-
con wafers, resulting in higher costs per
device than traditional silicon CMOS
or bipolar processing.
GaN processes and their variants,
such as GaN deposited on SiC wafers,
have great appeal for high-power device
fabrication because of the high break-
down voltages of GaN processes (100
V and more). Numerous studies on
GaN devices have shown greater high-
frequency potential than SiC HBTs and
GaAs MESFETs because of the mate-
rial’s excellent electron transport prop-
erties and short transit times, implying
higher gain at higher frequencies than
GaAs or SiC. In addition, GaN-based
materials have shown great potential for
high-performance small-signal devices,
such as low-noise amplifiers (LNAs),
indicating that a single GaN foundry
could support both power and low-noise
device fabrication. A further benefit of
a GaN-based LNA is its potential to
withstand higher input power levels
than GaAs-based LNAs. A number of
foundries currently offer GaN and GaN/
SiC processes, including Cree, Nitronex
(www.nitronex.com), TriQuint Semi-
conductor (www.triquint.com), and
RF Micro Devices (www.rfmd.com),
like TriQuint, long a supplier of GaAs
foundry services. Additional GaAs
foundries include WIN Semiconduc-
tors (www.winfoundry.com), United
Monolithic Semiconductors (www.
ums-gaas.com), OMMIC (www.ommic.
com), and Northrop Grumman (www.
northropgrumman.com).
In fact, military interest is so great
in GaN on SiC that the US Department
of Defense (DoD) has issued an online
grant offer (www.grants.gov), number
BAA-04-08-PKM-CALL-17. Sponsored
by the Air Force Research Lab (AFRL),
the grant aims to establish a domestic
open-foundry merchant supplier of GaN
on 100-mm SiC substrates.

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Mini-Circuits. Your partners for success since 1969.

r Engine
crosstalk
An Interview With
John Regazzi
NF: How has the test and measurement industry changed over the last 30 years?
JR:: When Giga-tronics was founded, the microwave test industry was much less mature than
it is today. The microwave field was evolving rapidly with product advancements occurring
on a regular basis. In 1980, a few milliwatts of power at 20 GHz were difficult to achieve
and the best synthesizers could fetch up to $70,000 apiece—plenty of margin to support
multiple participants and healthy profits. Newly designed equipment was just beginning
to take advantage of the microprocessor to enhance calibration accuracy and allow for
John Regazzi has been automated control, which opened many military and commercial applications.
Chief Executive Officer and Today, the industry is characterized by a few major players who together own
somewhere between 70 to 75 percent of the microwave test equipment market. Capi-
a Director of Giga-tronics
talization requirements to enter and obtain a leadership position in this business are
since April 2006. His previous much higher today due to product complexity and existing entrenched competitors.
positions at the company A 20-GHz synthesizer has gone from “black art” to “commodity” (with vastly supe-
included stints as President rior capability selling for less than half the 1980 price without adjusting for inflation)
and Vice President of since Giga-tronics first entered the market.
Operations for the instru- NF: Let’s talk about the company. After restructuring in 2006, you have co-located
ment division. Among everything but the component business, correct?
John’s previous experience JR: That’s right. When I became CEO, Giga-tronics was conducting business as three
is 22 years at Hewlett-Pack- separate companies—each with its own product line. This isn’t necessarily a bad approach
ard Co. and Agilent Technol- until you find yourself without sufficient volume to sustain the extra infrastructure,
ogies in various design and which is exactly where the company was in 2006. Besides collocating as much as we
could, we built a single leadership team. Now we are able to select the best investments
management positions
looking across all our markets and apply our resources to match the real opportunities
associated with their micro-
available. The facility that builds our components operates strictly as a manufacturing
wave sweeper and synthe- organization with most of the support functions, such as sales and marketing, order
sizer product lines. entry, purchasing, etc., coming out of our main location in San Ramon, CA.
NF: As a result, did your employees gain knowledge about the various product lines?
JR: Absolutely. Besides the efficiencies gained by cross-training our direct employees on
all the different products, our management team gained an appreciation of the unique
value proposition offered by each of the businesses. We found out there were a lot of
synergies we had been missing and we’ve taken steps to offer our customers more com-
plete solutions rather than just separate pieces.
NF: Giga-tronics is uniquely positioned because of its goal of offering customized prod-
ucts and its status as a switch and instrument provider. What customer solutions has
that enabled you to provide?
JR: At the most basic level, we tailor our general-purpose test equipment at the request
of our customers. For example, we are often asked to emulate obsolete equipment or
add special features so that an upgrade can be made without affecting a test system’s
software. In one case, we were able to replace three obsolete instruments with a single
Giga-tronics microwave generator. At the more complex level, we custom design many
of the switching solutions we deliver because the customer’s DUT is always unique. We
are in the process of delivering a switch design that helps a semiconductor test provider
deliver a solution for testing high-speed data storage components. Also, I can’t tell you
how many times we’ve encountered a customer who purchased a very high-performance
instrument, only to destroy the benefits by connecting it to the DUT through an inferior
switch. We have been able to bring our measurement knowledge to customers needing
RF interface units to help them produce test systems with good signal integrity and high
measurement accuracy. We don’t stop with the customer requirement, but sit with them

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Design Engineers Search
r Engine
IF/RF MICROWAVE COMPONENTS 460 rev H
crosstalk
and explain any issues we see as RF and jet. Giga-tronics supplies a unique, fast- interference problems between the major
microwave engineers. tuning, multi-sphere YIG filter that solves airplane subsystems?
NF: In the defense arena in particular, a difficult interference problem between JR: The new RADARs all use phased-array-
what opportunities do you see in aircraft the newly installed RADAR and the exist- antenna technology. They are capable of
upgrades, such as the F-18? ing electronics on the plane. A number of operating at much higher power levels
JR: Although the F-18 is an older design, additional airplanes—including the F-15 than the RADARs being replaced. When
the RADAR and airframe upgrades it and the B-52—are slated to receive new these new RADARs fire, energy from the
has received have made it a very capable RADARs as well. pulse can “leak” through a number of
and cost-effective multi-mission fighter NF: How exactly does the filter solve paths into the aircraft’s self-protection
electronics, inadvertently triggering a
threat reaction. Our YIG filter stops the
RF leakage into the self-protection elec-
SATCOM & Cellular/PCS

tronics at the moment the RADAR fires. It
then rapidly tunes clear so the protection
system can function normally.
RF Test Equipment NF: What other emerging applications are
you seeing—defense or otherwise?
JR: On the commercial side, the push for
Satellite Link Emulator “always on” fast Internet connections
RF link emulation for payload or VSAT ter- accessed via the new crop of handhelds
minal development. Doppler, delay, path loss, being produced is driving infrastructure
phase shift and fading may be independently upgrades as well as a new generation of
programmed . Dynamic changing delay offers semiconductor devices to support the
fully phase continuous operation. Up to four
many wireless interfaces in use today,
independent channels.
such as Wi-Fi, Bluetooth, GPS, and 3G/4G
cellular formats. In addition, the trend
Low cost CW Synthesizer toward “software as a service” and “cloud
High performance (10MHz to 4 GHz) CW computing” is driving the need for fast,
synthesizer with downloadable date file to high-density hard disk drives.
control power and frequency for sweep test- In defense, the emerging applica-
ing. Ethernet, GPIB and RS 232 control tions are in support of intelligence-
gathering activities for combating the
global threat of terrorism and in high-
AWGN Carrier/Noise Generators speed secure wireless data communica-
Complete line of frequency tunable broad-
tions. There are numerous programs
band Additive While Gaussian Noise
(AWGN) generators with built-in power for new surveillance electronics aboard
measurement. Eb/No ratio accuracy of UAVs and for wideband radios capable
0.1dB over full frequency range of delivering voice and video to front-
line personnel. There is also a need for
more portable test systems to keep all
these things working while deployed.
For example, personnel in forward
positions want to carry only that test
capability needed to support the assets
they’ve taken with them. Yet full test
capability is required when they return.
Support systems based upon synthetic
instrument principles will be key to de-
livering this type of scalability.
NF: Please provide your definition of a syn-
thetic instrument and how it will impact
ruce Street Oakland NJ 07436
32A Spru given applications.
01) 677-0008 Fax (201) 677-9444
Tel (201) JR: In my view, a synthetic instrument
refers to the aggregation of several dif- f
RF Test Equipment for Wireless Communications www.dbmcorp.com ferent measurement assets into a com-
mon view through the use of external

crosstalk
software. The software coordinates the the ability to make informed decisions. Ful- or grow through acquisitions. Also, being
behavior of those assets to produce the filling these requirements requires additional public forces you to continually evaluate
desired measurement function. ATE sys- legal and accounting infrastructure as well what’s best for the business—something
tems have followed this model for a long as public-relations efforts because we I think isn’t always done in the case of a
time. For ATE integrators, however, it’s compete for shareholders. It’s best if this privately held company.
not always so easy to coordinate the additional infrastructure can be spread over To learn more about Giga-tronics, go to
behavior of various test assets into a as large a base as possible. On the positive www.mwrf.com and check out the video
coherent function—especially given that side, having publicly traded stock gives the interview we conducted with them before
today’s instrumentation is typically very company additional avenues to raise capital they rang the NASDAQ bell.
complicated and capable of making mul-
tiple measurements by itself.
The synthetic concept of breaking
down traditional measurement instru-
ments into simpler blocks and then
coordinating their behavior with ex-
ternal software is an idea aimed at de-
signing instruments that will produce
better ATE systems. Systems designed
using a synthetic-instrument approach
will support easier mixing and match-
ing of capability to customer require-
ments. The resulting solutions will
be lower in size, weight, and power
consumption—good in any situation,
but essential for portable applications.
And while I believe that a synthetic
approach to building test equipment
doesn’t require any specific form fac-
tor, card-based formats for the indi-
vidual test assets are an ideal approach
for addressing multi-channel applica-
tions, such as electronic surveillance
and RADAR target simulation. Final-
ly, simpler test assets can be replaced
without affecting the TPS more easily
than when replacing a complex instru-
ment, which helps enable the 25-year
support now required by our military.
NF: What will be the direction of future
development at Giga-tronics?
JR: Right now, our instrumentation
and switching products use different
platforms and form factors, making it
more cumbersome to integrate these
resources tightly together. Giga-tronics is
embarking on the development of a next-
generation platform that will support a
range of test capability and connectivity
to permit building high-density, scalable
test systems with superior signal integrity
and accuracy.
NF: What are the pluses and minuses to
being a publicly traded company? www.ph
ww phaa sematrix.com
m
JR: Being a publicly traded company carries 877-
87 7-44
447-
7-27366 oor 408-428-1000
additional reporting requirements aimed at
enhancing transparency to give investors
2010 ■ Microwaves & RF visit www.mwrf.com 45

financialnews
Plessey Semiconductors Is Reborn
PLESSEY SEMICONDUCTORS has name of the operating business has 8-in. wafers for external customers in
been spawned from the acquisition of been subsequently changed to Plessey a foundry business model on 0.35-μm
the share capital of X-FAB UK Ltd. Semiconductors. The firm is now trading complementary-metal-oxide-semicon-
together with existing engineering com- from its semiconductor manufacturing ductor (CMOS) process technologies.
petence within a design and technology facility in Roborough, Plymouth, UK. Plessey Semiconductors is transferring
center located in Swindon, UK. The That facility currently produces its bipolar process technologies on both
silicon and silicon-on-insulator (SoI)
substrates to its Roborough facility. Both
technologies will be used to support a set
® of existing foundry customers. However,
Plessey Semiconductors will follow in its
namesake’s footsteps by developing and
Microwave Components & Instruments supporting a range of high-performance
DC to 67 GHz analog and mixed-signal semiconductor
products as well.
“The historical significance of what
we are doing is not lost on the manage-
ment and employees of our new busi-
ness,” says Michael LeGoff, Managing
Director of Plessey Semiconductors Ltd.
Directional Detectors
“A large proportion of our employees
Directional Couplers started their careers in Plessey working
3 dB 90° Hybrid Couplers to 50 GHz
to 67 GHz
to 40 GHz in the various sites around the UK. We
see this announcement as a return to
our roots. This is a business model that
addresses a market that we know very
well—designing and manufacturing a
set of high-technology semiconductor
Detectors products that competes with any semi-
Zero Bias conductor company in the world.”
Schottky According to Paul James, the firm’s
Double Arrow 3 dB 180° Planar Doped
Hybrid Couplers to 26.5 GHz Barrier Planar Commercial Director, “Our positioning
MLDD Power Divider/
Tunnel Diode Combiner to 40GHz addresses the critical and immediate
Threshold Detectors requirements we have identified in the
to 40 GHz market for our high-performance analog
technology and products. We have been
receiving very positive responses from
the market about our plans to support
both our existing foundry customers and
Adapters: DC to 50 GHz to engage new customers with exciting
In Series: SMA, 2.92 mm, 2.4 mm Coaxial
RF & Microwave Terminations new product releases. The first of these
Between Series: 2.29 mm to 2.4 mm
Power Meter to 50 GHz product families is on schedule for release
100 KHz to 40 GHz later in 2010.”
Broadband Limiters
Pin-Pin Diode The UK’s South West Regional Devel-
Pin-Schottky Diode to 18 GHz opment Agency (RDA) will partially
fund the project by providing nearly one
MIL Qualified Components Available million pounds Sterling under the Grant
®
for Business Investment scheme when the
1288 Anvilwood Ave. Sunnyvale, CA 94089 deal is completed. Paul Wilson, Business
Investment Adviser for the South West
Toll Free: (877) 734-5999 • Fax: (408) 734-3017 • [email protected]
www.krytar.com lists complete specifications RDA, states, “We are delighted to sup-
and application ideas for all products port a solution that provides continuity
of well-paid high-tech manufacturing
jobs in the region.”

AMPLIFIERS
Gain Noise In/Out Output Power
Frequency Gain Flatness Figure VSWR at 1dB Comp.
Model Number (GHz) (dB, Min.) (±dB, Max.) (dB, Max.) (Max.) (dBm, Typ.)
JSW4 18002600 20 5A
JSW4-18002600-20-5A 18-26
18 26 34 1.5 2.0 2.0:1/2.0:1 5
JSW4-26004000-28-5A 26-40 25 2.5 2.8 2.2:1/2.0:1 5
JSW4-18004000-35-5A 18-40 21 2.5 3.5 2.5:1/2.5:1 5
JSW4-33005000-45-5A 33-50 21 2.5 4.5 2.5:1/2.5:1 5
JSW5-40006000-55-0A 40-60 18 2.5 5.5 2.75:1/2.75:1 0
Higher output power options available.
MIXER/CONVERTER PRODUCTS
Frequency (GHz) Conversion Noise Image LO-RF
Gain/Loss Figure Rejection Isolation
Model Number RF LO IF (dB, Typ.) (dB, Typ.) (dB, Typ.) (dB, Typ.)
LNB-1826-30
LNB 1826 30 18-26
18 26 Internal 2-10
2 10 42 2.5
25 25 45
LNB-2640-40 26-40 Internal 2-16 42 3.5 25 45
IR1826N17* 18-26 18-26 DC-0.5 11 9.5 25 25
IR2640N17* 26-40 26-40 DC-0.5 11 9.5 25 25
SBW3337LG2 33-37 33-37 DC-4 -7.5 8 N/A 25
TB0440LW1 4-40 4-42 .5-20 -10 10.5 N/A 20
DB0440LW1 4-40 4-40 DC-2 -9 9.5 N/A 25
SBE0440LW1 4-40 2-20 DC-1.5 -10 10.5 N/A 20
* For IF frequency options, please contact MITEQ.
MULTIPLIERS
Frequency (GHz) Input Output Fundamental DC current
Level Power Feed Through Level @+15VDC
Model Number Input Output (dBm, Min.) (dBm, Min.) (dBc, Min.) (mA, Nom.)
MAX2M260400 13-20 26-40 10 10 18 160
MAX2M200380 10-19 20-38 10 10 18 200
MAX2M300500 15-25 30-50 10 10 18 160
MAX4M400480 10-12 40-48 10 10 18 250
MAX3M300300 10 30 10 10 60 160
MAX2M360500 18-25 36-50 10 10 18 160
MAX2M200400 10-20 20-40 10 10 18 160
TD0040LA2 2-20 4-40 10 -3 30 N/A
Higher output power options available.
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+. ""'0'+* ('*$+.) 0'+*+.0#!&*'! (/1,,+.0,(# /#
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www.miteq.com
companynews
CONTRACTS Mentor Graphics Corp.—Freescale Semiconductor has selected

Mentor as a partner in the silicon-test, yield-analysis, physical-
Northrop Grumman Corp.—Has been awarded a contract by the verification, and design-for-fabrication-and-manufacturability
Ministry of Defence of Brunei Darussalam to provide Joint (DFM) technology areas. This collaboration enables Freescale’s
Operations Centre (JOC) command and control capability deployment of Mentor’s Tessen and Calibre technologies cov-
for the Royal Brunei Armed Forces (RBAF). The contract, ering design for test (DFT), physical verification and analysis,
which will be undertaken by Northrop Grumman UK, will advanced resolution-enhancement technologies (RETs), and
include the supply of an integrated Command, Control, pre- and post-tapeout DFM.
Communications, Computers, Intelligence, Surveillance, Microchip Technology, Inc.—Has acquired Sunnyvale-based
and Reconnaissance (C4ISR) headquarter system and a ZeroG Wireless, Inc., which specializes in low-power embedded
deployable JOC together with the provision of training and WiFi solutions. ZeroG is a privately held, fabless-semiconductor
in-country support. The JOC will provide the RBAF with a developer of WiFi-certified transceivers and FCC-certified
facility that will deliver command and control capability for modules. This acquisition is expected to strengthen Microchip’s
military commands and civil organizations at the national wireless offerings by enabling embedded designers to easily
and international level. It will be interoperable with NATO connect to this ubiquitous networking protocol with any 8-,
and ASEAN allies as well as coalition partners. 16-, or 32-bit PIC microcontroller.
Hughes Network Systems—Has been selected by the State Cree, Inc.—Has announced a distribution agreement with
of New York to provide a suite of managed services and Arrow Electronics, Inc. for Cree silicon-carbide (SiC) power
connectivity under the Comprehensive Telecommunica- products. This agreement gives Arrow’s customers ready access
tions Services contract, Group 77017, Award 20268. The to the firm’s latest commercially available SiC junction-barrier-
indefinite-delivery indefinite-quantity (IDIQ) contract is for Schottky (JBS) products. Among the Cree products available
a term of seven years. It enables authorized users, such as through Arrow will be the Z-REC series of 600-V Schottky
statewide agencies, local governments, and eligible nonprofit, diodes and the 1200-V Schottky-diode line.
educational, and charitable organizations, to purchase tele- AT4 wireless—Has appointed HCT Korea as its official calibra-
communications services provided by Hughes. tion laboratory, offering local, KOLAS-accredited calibration
Bridgewater Systems—Has announced that MetroPCS Com- services in South Korea.
munications, Inc. has selected its Long-Term Evolution (LTE) Conexant Systems, Inc.—Has agreed to sell property adjacent
product suite including the Bridgewater Home Subscriber to its Newport Beach headquarters to City Ventures LLC
Server and Policy Controller. Both are anchored by Bridge- for $26.1 million. City Ventures is a residential and mixed-
water’s Subscriber Data Broker for its fourth-generation use developer of urban projects throughout California. The
(4G) LTE network. property, located on Jamboree Road in Newport Beach,
Vincotech—Has signed a distribution contract with Atlantik consists of approximately 25 acres and includes two leased
Elektronik, a full-service electronics distributor and market- buildings. The transaction is expected to be completed by
trend analyst for global technologies. Atlantik Elektronik, a the end of March.
partner of CSR, and Vincotech, the European GPS module Exalt Communications—Has announced that the South Metro
partner of SiRF (a CSR company), will market the latest GPS Fire Rescue Authority in Colorado has upgraded its mobile
modules and telematics solutions. The primary focus of this emergency-communications network with Exalt EX-4.9i
partnership is on promoting Vincotech’s SiRFstarIV-based microwave radio systems. South Metro provides fire and
technology and telematics product solution while continuing emergency services over 176 square miles in both Douglas
the design-in support of Vincotech’s SiRFstarIII portfolio. and Arapahoe counties.
Avery Dennison Corp.—Has announced that its radio-frequency-
F R E S H S TA R T S identification (RFID) inlays have passed the specifications
and system tests and met the performance requirements
Diagnosys Systems—Has launched a new web site (www. established by the International Air Transport Association
diagnosys.com) that coincides with a change to the Diag- (IATA) for the tagging of luggage at airports. The Avery Den-
nosys logo and overall corporate identity. In addition to test nison RFID technology has already been successfully deployed
equipment, Diagnosys now offers a complete suite of testers in tagging solutions at Las Vegas and Hong Kong airports.
and test services to assist customers in effectively using diag- Through its partnership with Motorola and Print-O-Tape,
nostic tools as a way to return faulty boards to service more Avery Dennison will supply Hong Kong International Air- r
rapidly. The web site allows prospects to move directly to port (HKIA) with inlays for up to 70 million RFID-enabled
pages covering functional test (go/no go), circuit-card diag- baggage-tracking tags.
nostics, high-performance testing, boundary scan, conformal Cycleo—Has announced the appointment of Spinnaker Systems,
coating removal, test services, or turnkey and custom design Inc. as its distributor in Japan. Spinnaker, a PALTEK Group
applications. General information on training and support company, will be responsible for sales and front-line support
is available as well. of the Lora IP family from Cycleo.

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7 GHz, with a selection of gain choices 10, 15, 20 or 24dB, stable and designed for a single 5-V supply. For more on
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US patent 6,943,629 *Low frequency determined by coupling cap. Mini-Circuits...Your partners for success since 1969

r Engine
people
Sakurai Receives 2010 IEEE

Award For Solid-State Circuits
TAKAYASU SAKURAI has been awarded the 2010 IEEE
Donald O. Pederson Award in Solid-State Circuits.
The award, which is sponsored by the IEEE Solid-
State Circuits Society, recognizes Sakurai for pio-
SAKURAI
NAME neering contributions to the design and modeling of
high-speed and low-power complementary-metal-oxide-semiconductor
(CMOS) logic circuits. Sakurai was one of the earliest researchers to
create effective power-efficient solutions to the challenge of designing
CMOS logic circuits involving very-large-scale-integration (VLSI)
circuit design. The models that he developed over 20 years ago are still
being used by designers today. Sakurai is currently a professor with
the University of Tokyo’s Institute of Industrial Science.
AZ Electronic Materials—GEOFF WILD has tive Officer of Monticello Capital in

been appointed Chief Executive Officer. Chantilly, VA.
He succeeds THOMAS VON KRANNICH- Sunrise Micro Devices, Inc. — DR. ED
FELDT, who will retire as CEO but remain CALLAWAY, the company’s Co-Founder
on the board of the company. Wild will and Chief Technology Officer, has been
be based in Hong Kong. He was most named a Fellow of the Institute of Elec-
recently President and Chief Executive trical and Electronics Engineers (IEEE)
Officer of Cascade Microtech. for his contributions to wireless sensor
Conexant Systems, Inc. — PHILLIP E. networks and low-power design tech-
POMPA has joined the company in the niques for communications devices and
newly created position of Senior Vice systems. Callaway holds 43 issued US
President of Product Marketing. Pompa patents and has written several books,
joined Conexant from Rational Semi- book chapters, and technical papers.
conductor, where he was Co-Founder MI Technologies—
and served as President and Chief JEFFREY FORDHAM
Executive Officer. has been named
Herley Industries, Inc.—JOHN A. THONET Vice President of
has succeeded DAVID M. LIEBERMAN as the Near-Field
Chairman of the Board. Thonet has been Systems and Prod-
a director of the company since 1991 ucts Business Area.
and served as secretary as well. Thonet He formerly held
is the President of Thonet Associates, executive-manage-
FORDHAM
Inc., a consulting firm that he founded ment positions in
in 1980. Lieberman was appointed to engineering, sales, applications engi-
the company’s board of directors on neering, and marketing within the com-
July 22, 2009 and elected as an Execu- pany. In addition, MALCOLM WARREN
tive Officer of the company, serving has been appointed International Sales
in the capacity as Chairman of the Director. Warren was most recently
Board. Lieberman provided services the Managing Director for Asia for
to the company for over 35 years and ViaSat in Atlanta.
has transitioned back as counsel to the MasTec, Inc.— RAY HARRIS has been
company. In addition to these changes, appointed President. He brings over
MICHAEL N. POCALYKO has been elected 30 years of experience in the utility
to the board of directors as a Class II and energy industries. Harris most
Director to serve until 2011. Pocalyko recently served as President and CEO
is Managing Director and Chief Execu- of Mesa Power.

education
Phone: +49 6151 7303-752
MEETINGS E-mail: [email protected]; Web: www.cst.com
IWCE ANTENNAS: Principles, Design, and

March 8-12, 2010 (Las Vegas, NV) Measurements
For more information, visit: May 3-6, 2010 (Annapolis, MD)
www.iwceexpo.com ARINC Conference Center
Registration Fee: $1695
ISQED 2010 11th International Symposium
Topics include antenna fundamentals,
& Exhibits on Quality Electronic Design
arrays, wire antennas, broadband anten-
March 22-24, 2010 (San Jose, CA)
nas, horns, reflectors, antennas in systems,
DoubleTree Hotel
antennas for wireless communications, and
For more information, visit: http://www
measurements.
isqed.org
For enrollment information, contact:
Exhibitions are free of charge
Leanne Traver, Northeast Consortium
6th Annual International Conference and for Engineering Education (NCEE)
Exhibition on Device Packaging P.O. Box 68, Port Royal, VA 22535-0068
March 9-11, 2010 (Scottsdale, AZ) Phone: (804) 742-5611
Radisson Fort McDowell Resort FAX: (804) 742-5030
For more information, visit: E-mail: [email protected]
www.imaps.org/devicepackaging For questions concerning course
content, contact: Dr. Warren Stutzman
Australian EW and IO Convention 2010 Virginia Tech, ECE Dept. 011
April 12-13, 2010 (Adelaide, South Australia) Blacksburg, VA 24061
Hilton Hotel Adelaide Phone: (540) 231-8401
For more information, visit: Web site: [email protected]
www.oldcrows.org.au
European Microwave Week

CALL FOR PAPERS
Sept. 26-Oct. 1, 2010 (Paris, France) ISQED 2010 11th International Symposium
For registration information, & Exhibits on Quality Electronic Design
contact: Rhoda McCorquodale March 22-24, 2010 (San Jose, CA)
Horizon House Publications Ltd. For more information, visit: www.isqed.org
Phone: +44 20 7596 8723
E-mail: [email protected] IEEE WCNC 2010
April 18-21, 2010 (Sydney, Australia)
IEEE GLOBECOM 2010 For conference information and submission
Dec. 6-10, 2010 (Miami, FL) guidelines, visit www.ieee-wcnc.org/2010
For more information, visit: Contact: Heather Ann Sweeney
www.ieee-globecom.org/2010 IEEE Communications Society
3 Park Avenue
SHORT COURSES New York, NY 10016
Phone: (212) 705-8938
dSpace Free Autocoding Seminars
E-mail: [email protected]
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IF/RF MICROWAVE COMPONENTS 331 rev N
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Droundup
On-Glass AS AN ALTERNATIVE
A to monopole-type antennas, uses a multiloop structure with three differently
many commercial vehicles now provide frequency- sized loops and a common feed line. This structure
Vehicle Antenna modulation (FM) reception via antennas that are broadens the operating band by efficiently using the
Receives FM printed directly on the rear or quarter glasses of a available glass area while raising the vertical gain
For RVs vehicle. Unfortunately, these on-glass antennas tend
to possess a low vertical gain and narrow bandwidth.
by maximizing the z-directed currents.
After the antenna was installed in a commercial
They also exhibit nulls in their radiation patterns, as RV, its performance was measured. On average,
they are placed in close proximity to the conducting the antenna exhibits gain of roughly −9.5 dBi with
frame of the vehicle and are printed on glass with deviation of less than 4 dB compared to the gain
high dielectric losses. To serve the unique needs of a of a conventional quarter-wavelength roof-mount-
recreational vehicle (RV), an on-glass antenna with a ed monopole. To examine the omnidirectional
multiloop structure for FM radio reception has been property, the azimuth radiation pattern also was
developed by Seungbeom Ahn, Dongwook Park, measured. The result was a gain deviation below
and Hosung Choo from Seoul’s Hongik University 20 dB. The transparency of the antenna body was
together with Seulgi Park from LIG Nex1 Co. Ltd. improved by adjusting the stripline widths based
and Yongho Noh from Hyundai-Kia Motors. on the induced current distribution. See “Design of
Thee an
Th ante
tenn
nnaa co
cons
nsis
ists
ts of
of co
cond
nduc
ucti
ting
ng str
strip
ipli
line
ne an OOn-
n-Gl
Glas
asss Ve
Vehi
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clee An
Ante
tenn
nnaa Us
Usin
ingg a Mu
Mult
ltil
iloo
oop
p
that is printed on glass and fed by a coaxial cable Structure,” Microwave And Optical Technology
from the upper left corner of the quarter glass. It Letters, January 2010, p. 107.
Antenna-In- TO ENABLE VERY-HIGH-DAT ATA-RATE

A applications, package (AiP) design may provide an answer, it
the IEEE 802.15.3c standards group is defining also invites the risk of the antenna coupling to the
Package Forges specifications for 60-GHz radios that use only a radio chip. In the worst-case scenario, in which
Interconnection few gigahertz of unlicensed spectrum. Typically, no guard ring and pattern grounded shield are
At 60 GHz those radios have been designed by assembling
several monolithic microwave integrated circuits
used for the inductor and the distance between
the inductor and antenna is the shortest allowed
(MMICs) in gallium-arsenide (GaAs) semiconductor by the on-chip layout rule, coupling from the
technology. Yet a recently proposed antenna, which in-package antenna to the on-chip inductor was
targets highly integrated 60-GHz radios, is specifi- lower than 27.5 dB at 60 GHz.
cally designed to exhibit capacitive input impedance The quasi-cavity-backed, guard-ring-detected,
that complements low-cost wirebonding packaging substrate-material-modulated slot antenna is
and assembly techniques. It was developed by Y.P. implemented in a thin cavity-down, ceramic-ball-
Zhang and M. Sun from Nanyang Technological grid-array (CBGA) package in low-temperature-
University, K.M. Chua and L.L. Wai from Singapore co-fired-ceramic (LTCC) technology. It offers an
Institute of Manufacturing Technology, and Duixian impedance bandwidth of 59 to 65 GHz with 94
Liu from th
Li he IIBM
BM T.J.
J Watson R Researchh Center. percent estimated
i d effi
fficiency.
i See “A
“Antenna-in-
i
At millimeter-wave frequencies, one challenge Package Design for Wirebond Interconnection
is the realization of a low-loss interconnection to Highly Integrated 60-GHz Radios,” IEEE
between a radio chip and antenna using a wire- Transactions On Antennas And Propagation,
bonding technique. Although this antenna-in- October 2009, p. 2842.
Filter Mitigates TO BLOCK UNWAW NTED frequencies, it is common to To achieve a quasi-elliptic response, capacitive
place a very-high-Q high-temperature-semicon- cross coupling is added between the first and last
Interference ductor (HTS) filter before the low-noise amplifier nonadjacent resonators to introduce two trans-
For Astronomy (LNA) of a radio telescope’s front end. A minia- mission zeroes at the edges of the rejected band.
Observations turized HTS four-pole filter for the RF interfer-r The notch filter targets RF interference mitigation
ence mitigation of the 900-MHz cellular band in centered at 859 MHz with 8.1-percent fractional
radio telescopes was recently presented by Alonso bandwidth for the migration of the 900-MHz cel-
Corona-Chavez from Mexico’s National Institute lular band. Miniaturized half-wavelength resonators
for Astrophysics, Optics, and Electronics; Ignacio are coupled to the main transmission line. See “A
Llamas-Garro from Spain’s Technical University High Temperature Superconducting Quasi-Elliptic
of Catalonia; and Michael J. Lancaster from the Notch Filter for Radioastronomy,” Microwave And
University of Birmingham in the UK. Optical Technology Letters, January 2010, p. 88.

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LO W  P O W E R L N A
DesignFeature
Low-Power LNA
Drops Noise At 2.4 GHz
This CMOS amplifier delivers high gain and low noise figure at
2.4 GHz with extremely low power consumption, by means
of current-reuse and common-gate design strategies.
both high gain and low noise figure
CHUNHUA WANG Vdd can be achieved at low voltages and
Professor
power consumption.
BAIMEI LIU The inductor-degenerated CS to-
RFout
Master’s Program
M2 pology is a popular LNA choice for
School of Computer and Communication, Hunan C2
University, Changsha 410082, Peoples’ Republic narrowband applications; it provides
of China; e-mail: [email protected], e-mail: both high gain and relatively low
[email protected]. C4 C3 noise figure. But it provides low noise
figure via high power consumption
L1 and/or high-quality-factor (high-Q)
L
ow-noise-amplifier M1 off-chip inductors. The noise figure
(LNA) design requires of these structures increases sharply
tradeoffs, often among as the power consumption is de-
such goals as noise fig- R1 creased.13 For a low-power receiver,
RFin
ure, gain, linearity, and C1 Vbias an LNA based on a CG approach is
LS
stability. In addition, the preferred topology.11 At 2.4 GHz,
portable applications call CG LNAs typically offer lower noise
for low power consump- figures than CS LNAs for power con-
tion. But through the use of a com- 1. This schematic diagram shows the vari- sumption below 3.1 mW.12 Com-
mon-gate (CG) architecture for input ous components used with the low-power pared to CS LNAs, CG LNAs feature
impedance matching and reduced 2.4-GHz CMOS LNA. broadband input match and better
power consumption through current- linearity and stability.13 To achieve a
reuse techniques, an RF CMOS LNA increased supply voltage. To lower the low noise figure with low power con-
was developed with 15.5-dB forward supply voltage, a folded topology has sumption, a CG LNA input structure
gain and 1.68 dB noise figure at 2.4 been proposed.5,6 The required sup- was used (Fig. 1); by tuning input in-
GHz. With its excellent input and ply voltage is reduced by one transis- ductor LS and capacitor C1, the noise
output impedance matching, it con- tor compared with that of a cascade figure can be reduced to minimum. In
sumes only 1.05 mW power. amplifier. Unfortunately, with more addition, this structure’s current-re-
Low-voltage and current-reuse than one gain stage, the total current use two-stage topology provides rela-
design approaches can effectively consumption of a CMOS LNA may tively high gain with reduced power
decrease power consumption,1-9 in- not be minimized. A current-reuse, consumption.
cluding the use of cascode amplifier two-stage common-source (CS) to- In Fig.1, CS MOS transistors M1
configurations.1-4 With the current- pology can provide high gain at low and M2 represent the first and second
reuse topology, desirable gain can be supply voltage and power consump- stages, respectively, of the LNA. They
achieved with relatively low current tion, although at somewhat elevated share the same DC bias current flow-
consumption. However, due to the noise levels.7-9 With a current-reuse, ing through L1 to reduce power con-
use of multiple transistors, it employs two-stage CG topology, however, sumption. The amplified RF signal
Microwaves & RF ■ FEBRUARY 2010 visit www.mwrf.com 57

DesignFeature
from M1 is directed to the gate node

Output
of M2 through coupling capacitor C4. Interstage Zout,1 Zout,2
matching matching
Capacitor C3 is the RF bypass for M2.
Inductor LS and capacitor C1 help to
M2
obtain simultaneous power and noise Input matching
Zin M1 C4 Ld C5 RL
matching for the input stage, while
output matching is provided by Ld, L1
C2, and C5. The LC network L1-C4 C1
RS LS Zin,1
between the gain stages is used for in-
terstage matching. Zin,2
The proposed LNA topology is ba- VS
sically a two-stage amplifier (Fig. 2).
The overall transconductance is equal
to the multiplication of the individual
transconductances of devices M1 and 2. This circuit schematic diagram represents an equivalent two-stage cascaded amplifier.
M2. Therefore, it has a comparable
power gain to the cascaded CS ampli- employed in the proposed LNA to-
fier topology. (See Eq. 6 in box below.) pology to boost the amplifier gain for
The input of the LNA must be ultra-low-voltage operation.
matched to the output of the filter From Eqs. 5 and 6, the operating As the first active building block in
following the antenna to minimize frequency, ω0, can be derived as an RF receiver, the LNA is required
reflections between the LNA and the 1 to provide sufficient gain such that the
w0 = ( 7)
antenna. The proposed LNA is treated Ls ( C 1 − Ls g m 2 ) noise contributed from the following
as a two-stage amplifier, with simpli- stages can be effectively suppressed.
fied circuit model in Fig. 2. The condi- From the input matching conditions In a cascade amplifier, the total noise
tions for input matching7 are shown described in Eqs. 1-3, the effective figure can be expressed14 by Eq. 10:
in Eqs. 1-3: transconductance of the first stage, F 2 − 1 F 3 −1
gM1,eff, can be written as: F = F1 + + + ... (10)
Zssource = Z * inin , 1 (1) G1 G 2G 1
(See Eq. 8 in box below.) where NFn and Gn are the noise
Zoout , 1 = Z * in, 2 (2) figure and gain of the nth stage, re-
where s = jω0 and gM1 is the spectively. According to Eq. 10, the
Zoout , 2 = Z * L (3 )
transconductance of M1. From Eqs. noise figure and gain of the first stage
where Zsource is the impedance seen 1-3, it is possible to also know the are both very important for total noise
at the gate of M1 when looking to- effective transconductance of the sec- figure contribution. Thus, the first
ward the antenna, ond stage, gM2,eff, as stage should be carefully designed to
Zin,1 is the input impedance of gm 2 achieve a good input matching and
M1, and ZL is the load impedance. gm 2, efeff = (9) to make a tradeoff among gain, noise
2 w0Cggs 2 Re( Ziin, 2)
A simple, small-signal equivalent figure, and power consumption.
circuit of the first gain stage is illus- where gM2 is the transconductance The noise factor of a two-port net-
trated in Fig. 3 where RS is the source of M2 and Cgs2 is the gate-to-source work, such as the LNA, can be ex-
impedance, and gm represents the capacitance of M2. The overall ef- pressed1 as Eq. 11:
transconductance of the MOSFETs. fective transconductance is equal to
Gn 2
In Fig. 3, the input impedance of M1, the multiplication of the individual F = F min + Zssource − Zoopt (11)
Zin, is expressed by Eq. 4: transconductance of M1 and M2. Rsourcre
Therefore, two cascaded stages are where Fmin is the minimum noise
(See Eq. 4 in box at right.)
w0 4 Ls 2C12 gm + jw0C 1(C 1Lsw0 2 − w0 2 Ls 2 gm 2 − 1)
Ziin = (4 )
From Eq. 4, the input impedance w0 2 C12 + ( w0 2 LsC 1 gm ) 2
matching to a 50-Ohm system can be
achieved by jw0C 1(C 1Lsw0 2 − w0 2 Ls 2 gm 2 − 1) = 0 (6 )
w0 4 Ls 2C12 gm s 2 C1Lsgm1
Rs = (5 ) gm1, efeff = − (8)
w0 2 C12 + ( w0 2 LsC 1 gm)2 s 2C 1Ls ( gm1Rs + 1) + s (C 1Rs + Lsgm1) + 1

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IF/RF MICROWAVE COMPONENTS 432 rev J
DesignFeature
Comparing different CMOS amplifier designs

REFERENCE CMOS PROCESS FREQUENCY S11 (DB) S22 (DB) S21 (DB) NF (DB) IIP3 (DBM) POWER GAIN/PDC FOM
(UM) (GHZ) (MW) (DB/MW) (MHZ)
2 0.13 2.4 -13 -10 13 3.6 — 6.5 2 —
5 0.18 5.0 -13.4 -10.6 10 3.37 -8.6 1.08 9.3 27.0
6 0.13 5.0 -17.7 -11.4 10.3 5.3 -13 1.03 10 20.0
7 0.18 5 -12 -21 9.2 4.5 -16 0.9 10.2 19
8 0.18 2.8-3.3 -11.1 <-12 15.2 3.01 -10.8 1.81 8.4 2ww3.4
This work 0.18 2.4 -10.5 -12.3 15.5 1.68 -6.5 1.05 14.7 31.9
factor, Gn is the equivalent noise con- when Eqs. 14 and 15 are satisfied. justing the values of LS and C1. With
ductance, Zsource = Rsource + jXsource Therefore, when Ropt is larger than shunt capacitance C1, the value of LS
is the impedance seen at the input Rin,1, there is a tradeoff between the can be decreased to a level suitable for
of the LNA when looking toward noise figure and S11. Using a CS LNA on-chip integration.
the antenna, and Zopt = Ropt + jXopt configuration with inductive degener- Circuit simulations for the pro-
is the optimum source impedance. ation for input matching, power and posed design were performed with the
Although Fmin can be minimized by noise matching cannot be obtained si- Advanced Design System (ADS) suite
properly choosing the width of the multaneously at low current bias, thus of software tools from Agilent Tech-
MOS device, this is not a good choice the noise figure could be potentially nologies (www.agilent.com). Mea-
for constant DC current. To minimize high for low-power applications. For sured S-parameters are shown in Fig. 5
the NF, [where NF=10log(dB)], it is a low-power LNA, a CG LNA is the for comparison. The maximal power
crucial to design the matching net- preferred topology. gain is 15.5 dB at 2.4 GHz, S11 is
work of the LNA such that the second In the proposed LNA, even when -10.5 dB at 2.4 GHz, and S22 is -12.3
term in Eq. 14 is close to zero, which the MOSFET’s Ropt is larger than dB at 2.4 GHz. The measured noise
in turn means that Zsource should be Rin,1, from Eqs. 16 and 17, it is pos- figure reaches 1.68 dB at 2.4 GHz.
close to Zopt. sible to adjust the sizes of M1, LS , and The LNA’s measured input third-or-
The matching conditions for mini- C1 to achieve optimum input match- der intercept (IIP3) is -6.5 dBm. The
mum noise figures of the cascaded ing and noise matching simultaneous- DC power consumption is only 1.05
gain stages7 are given by Eq. 12: ly. In addition, a value of S11 of less mW from a 0.9-V supply.
than -10 dB is adequate for an LNA A commonly used figure of merit
Zssource = Zoopt , 1 (12 )
in most applications.1 Therefore, the (FOM) for comparing low-power
with the matching conditions speci- value of Rsource can be brought much LNAs is the ratio of power gain to
fied in Eqs. 1-3 and 12 resulting in closer to the value of Ropt by alter- DC power consumption (gain/DC
Zssource = Z *in , 1 = Zooppt (13 ) ing the values of LS and C1 for better power). A more meaningful FOM
noise matching, while S11 is less than includes the effects of amplifier gain,
-10 dB. Noise figure responses with noise figure, linearity (IIP3), operating
Rsource = Rin, 1 (14)
various values of LS and C1 are shown frequency (f0), and DC power con-
From Eq. 13, this yields in Figs. 4(a) and 4(b), respectively, indi- sumption (Pdc)15 as shown in Eq. 18
o t = Rsource (15)
Rop cating that is it possible to reduce the (see p. 62).
noise figure as low as possible by ad- The table shows data from a num-
From Fig. 2, the relations of ber of low-power CMOS
Eqs. 16 and 17 can be found: LNAs. It shows that this
ultra-low-power LNA can
w02 Ls 2 Rs Zsource
Vgs provide better overall per-
Rsource = (16 ) Vgsgm
( Rs ) 2 + ( w0 Ls − 1 ) 2 RS C1 RL formance in terms of gain,
w 0C 1 noise figure, linearity, DC
Vout
1 power consumption, and
Rin, 1 ≈ (17 ) frequency of operation. The
gm Vin LS
Zin LNA was fabricated with a
ZinM
According to the defini- standard 0.18-μm CMOS
tion of a matching network, technology and offers the
the noise and power match- best gain to DC power ratio
ing of the LNA are achieved 3. This is the small-signal equivalent circuit for M1. and overall FOM among re-

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DesignFeature
20 40
S21
0 30
Noise figure(2)—dB

S21—dB

–20 20

NF

!%$" –40 10
! %

–60 0

1.2 1.7 2.2 2.7 3.2
" '%$() (a) S21 and noise figure Frequency—GHz
0 0
–2 –2
S22
–4

–4
S11—dB
S22—dB
S11 –6
–6
%$" –8

–8
–10
& –10 –12

–12 –14

1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
# '%$() (b) S11 and S22 Frequency—GHz
+40
4. These plots show modeled (a) noise figure with values of source
+20
inductance, LS, and (b) noise figure with values of capacitor C1.
0
lin3—dBm
lin1—dBm
in3—dBm
in1—dBm
cently published low-power CMOS LNAs. –20

–40
REFERENCES IIP3 = –6.5 dBm
–60
1. Saman Asgaran and M. Jamal Deen, “Design of the Input Matching
Network of RF CMOS LNAs for Low-Power Operation,” IEEE Transactions –80
On Circuits And Systems, Vol. 54, No. 3, March 2007, pp. 544-554. –100
2. Majid El Kaamouchi and Mehdi Si Moussa, “A 2.4-GHz Fully Integrated
–45 –40 –35 –30 –25 –20 –15 –10 –5 0
(c) RF power—dBm
ESD-Protected Low-Noise Amplifier in 130-nm PD SOI CMOS Technology,”
IEEE Transactions On Microwave Theory And Techniques, Vol. 55, No. 12, 5. These plots show measured data for (a) gain and noise figure, (b)
December 2007, pp. 2822-2831. S11 and S22, and (c) third-order-intercept performance for the low-
3. Mikaël Cimino and Hervé Lapuyade, “Design of a 0.9-V, 2.45-GHz Self-
power 2.4-GHz LNA.
Testable and Reliability-Enhanced CMOS LNA,” IEEE Journal Of Solid-
State Circuits, Vol. 43, No. 5, May 2008, pp. 1187-1194.
4. Yiping Feng, Gaku Takemura, Shunji Kawaguchi, and Peter Kinget. Gain[ dBd ] IIP3[mw]
II f0
“Design of a High Performance 2-GHz Direct-Conversion Front-End FOM = 10 ⋅ lg(100 ⋅ ⋅ ) + 10 lg( ) (1
188 )
( F − 1) ⋅ Pdc
d [ mw] Pdc
d [ mw] 1GH
GHz
With a Single-Ended RF Input in 0.13-μm CMOS,” IEEE Journal Of
Solid-State Circuits, Vol. 44, No. 5, May 2009, pp. 1380-1390.
5. Hsieh-Hung Hsieh, “Gain-Enhancement Techniques for CMOS Folded 11. Wenjian Chen, Tino Copani, Hugh J. Barnaby, and Sayfe Kiaei, “A
Cascode LNAs at Low-Voltage Operations,” IEEE Trans. Microwave 0.13-μm CMOS Ultra-Low Power Front-End Receiver for Wireless Sensor
Theory And Techniques, Vol. 56, No. 8, August 2008, pp. 1807-1816. Networks,” 2007 IEEE RF Integrated Circuits Symposium, pp.105-108.
6. Dake Wu, “A 0.4-V Low Noise Amplifier Using Forward Body Bias 12. James Ayers, Kartikeya Mayaram, and Terri S. Fiez, “Tradeoffs in the
Technology for 5 GHz Application,” IEEE Microwave And Wireless Design of CMOS Receivers for Low Power Wireless Sensor Networks,
Components Letters, Vol. 17, No. 7, July 2007, pp. 543-545. Circuits, and Systems,” ISCAS 2007, IEEE International Symposium, May
7. Hsieh-Hung Hsieh, “Design of Ultra-Low-Voltage RF Front-ends With 27-30, 2007, pp. 1345-1348.
Complementary Current-Reused Architectures,” IEEE Trans. Microwave 13. Saeed Sarhangian and S. Mojtaba Atarodi, “A Low-Power CMOS
Theory And Techniques, Vol. 55, No. 7, July 2007, pp. 1445-1458. Low-IF Receiver Front-End for 2450-MHz Band IEEE 802.15.4 ZigBee
8. Muh-Dey Wei, “A Low-Power Ultra-Compact CMOS LNA with Shunt- Standard,” Circuits and Systems, ISCAS 2007, IEEE Int. Symp., May 27-30,
Resonating Current-Reused Topology,” IEEE Third European Microwave 2007, pp. 433-436.
Integrated Circuits Conference, October, 2008, pp. 350-353. 14. Da-Ke Wu, Ru Huang, and Yang-Yuan Wang, “A Low-Voltage and
9. Chen-Yuan Chu and Chien-Cheng Wei. A 24GHz Low-Power CMOS Low-Power CMOS LNA Using Forward-Body-Bias NMOS at 5 GHz,”
Receiver Design. Circuits and system, 2008.ISCAS 2008.IEEE International 2006 Solid-State and Integrated Circuit Technology, ICSICT 2006, 8th
symposium on 18-21 May 2008.p.980-983. International Conference, pp. 1658-1660.
10. Jere A. M. Järvinen, Jouni Kaukovuori, and Jussi Ryynänen, “2.4-GHz 15. Hanil Lee and Saeed Mohammadi, “A 3-GHz Subthreshold CMOS Low
Receiver for Sensor Applications,” IEEE Journal Of Solid-State Circuits, Noise Amplifier,” 2006 IEEE Radio Frequency Integrated Circuits (RFIC)
Vol. 40, No. 7, July 2005, pp. 1426-1433. Symposium, June 11-13, 2006, p. 4.

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w w w. m a c o m t e c h . c o m
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S A M P L E D P L L S , PA R T 2
DesignFeature
Analyze Phase Noise

In A Sampled PLL
Part 2 of this three-part series on phase noise in sampled PLLs analyzes
the differences between the behaviors of continuous-time and sampled
loops and how they can be modeled effectively.
The closed-loop transfer function is Figure 6 shows the familiar closed-

PETER BEESON given by: loop phase response as a function of
RF Consultant
LA Techniques Ltd., The Works, Station Road, Claygate GK( s ) frequency.
Tr ( s ) :=
KT10 9DH, United Kingdom +44 1372 466040, GK( s ) (37) The open-loop gain for a sampled
FAX: +44 1372 466688, e-mail: peter.beeson@latech- 1+ system is given by Eq. 38. In this case,
N
niques.com, Internet: www.latechniques.com the gain has been scaled by a factor
When this function is plotted, it of T to keep the value correct. Also, n
provides the familiar response shown has been reduced from infinity to 5 to
P
hase noise in sampled in Fig. 5, a plot of closed-loop mag- speed the calculations. The results of
phase-locked loops (PLLs) nitude as a function of frequency. Eq. 38 are plotted in Fig. 7 on a linear
can impact the perfor- scale for open-loop magnitude as a
mance of a wide range of function of frequency. The open-loop
commercial and military Closed-loop magnitude versus frequency gain is aliased about each harmonic
systems, including com- 101 of the sampled frequency. The same
91
munications networks based on phase 81 information is plotted in Fig. 8 on
20log[(|Tr(jω)|]
modulation. As shown last month in 71 the more familiar log scale so that the
the first installment of this three-part 61 gain and phase margin can be more
51
series, modeling approaches may dif- 41 easily seen in this plot of open-loop
fer depending upon whether a PLL is 31 magnitude response. Figure 9 shows
a continuous-time or sampled system, 21 the measured open-loop gain of the
1 x 102 1 x 103 1 x 104 1 x 105
with nonlinear approaches needed for ω/2π test PLL, while Fig. 10 shows the
th latter. In this second article install- open-loop phase with sampling in a
ment, it may be helpful to examine 5. This plot of magnitude as a function of fre- plot of open-loop phase as a function
the results of a continuous PLL sys- quency is typical of closed-loop systems. of frequency.
tem so that it might be possible to see Compared to the continuous time
the differences when compared to a system, the open-loop gain in the
sampled system. The open-loop gain Closed-loop phase versus frequency sampled system passes through unity
[Gol(s)] for a continuous system is 0 gain at a higher frequency and that
ang[(|Tr(jω)|]57
–45 the phase margin is reduced at this

GK( s )
Gol ( s ) := (36)
–90 frequency.
N The corresponding closed loop
–135
Figure 3 shows a plot of open-loop transfer response with sampling,
gain (magnitude versus frequency) –180 Tr’(s), is given by Eq. 39. This is not
1 x 102 1 x 103 1 x 104 1 x 105
for a continuous system with an open ω/2π a true transfer response as it is the
loop bandwidth set to about 3 kHz, output phase divided by the sampled
while Fig. 4 shows a plot of open- 6. This plot of phase response as a function of input phase. Figure 11 shows a plot
loop phase for a continuous system. frequency is typical of closed-loop systems. of the closed-loop transfer response

5
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DesignFeature
with sampling (closed-loop magnitude versus frequency) with sampling.

while Fig. 12 shows the closed-loop response of the test To continue the analysis, at this point the functions are
PLL. Figure 13 provides a plot of the closed-loop phase redefined as a function of sampling frequency so that the
5 effect of different sampling frequencies may be observed
G'ol ( s ) :=
1
N
⋅ ∑ (
GK s − j ⋅ n ⋅ ω s ) later.
The next part of this analysis will examine the effect of
(38)
n =− 5 sampling on the phase noise of the PLL synthesizer. The
GK( s ) main sources of noise are free-running VCO noise, phase
Tr' ( s ) := detector noise, thermal noise in the loop filter components,
5
(39) and reference oscillator noise. (Divider noise is included
1+
1
N
⋅ ∑ (
GK s − j ⋅ n ⋅ ω s )
n =− 5 Open-loop magnitude versus frequency
60
20log[(|G'ol(jω)|]
10 40
G'ol (s , fs ) :=
N
1
⋅ ∑ (
GK s − j ⋅ n ⋅ 2⋅ π ⋅ fs ) (40)
20
n =− 10
0
GK( s ) –20
Tr' (s , fs ) := 1 x 103 2 x 104 4 x 104 6 x 104 8 x 104 1 x 105
10 ω/2π
( )
(41)
∑
1
1+ ⋅ GK s − j ⋅ n ⋅ 2⋅ π ⋅ fs
N 7. A linear scale was used to plot the values from Eq. 38 for open-loop
n =− 10
magnitude as a function of frequency.
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DesignFeature
with the phase detector noise.) In analyzing the phase noise Then, for a typical oscillator such as the one measured
of the VCO (Fig. 14), the different segments (in distance above, the noise (in dBc/Hz) and offset frequency (in Hz)
from the carrier) should first be defined. Let the SSB phase parameters are L0 = -155, f0 = 3 x 106, L2 = -126, f2 = 100
noise in the far-off region, where it has an f0 profile, be x 103, L3 = -70, and f3 = 1 x 103. The f -3 section of the
called by the term L0 , with the offset f0. Similarly, in the noise due to 1/f noise in the oscillator circuit is modeled by
region where the phase noise has an f-2 profile, let the phase Eq. 42:
L3
noise be called by the term L2 and the offset f2. Finally, in − 3
the region where it has an f-3 profile, let the phase noise be
⋅ f3 ⋅ ⎛⎜
10 3 s ⎞ (42)
L3 ( s ) := 10 ⎟
known as L3 and the offset f3. ⎝ 2⋅ π ⎠
Open-loop magnitude response

60
50
40
20log[(|G'ol(jω)|]
30
20
10
0
–10
–20
100 1 x 103 1 x 104 1 x 105
ω/2π
8. The values of Fig. 7 are plotted here on a logarithmic scale for open-
loop magnitude. 9. This plot shows the measured open-loop gain of the test PLL.
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Microwaves & RF ■ FEBRUARY 2010 67

DesignFeature
The f -2 section due to peaking of noise for the free-running VCO. The
⎛ L0 ⎞
white noise by oscillator is modeled ⎜ ⎟ 0
phase noise at the output of the loop is
L0 ( s ) := 10⎝ ⎠ ⋅f ⋅ ⎛⎜
by Eq. 43: 10 0 s ⎞ made up of the noise when n = 0 and
⎛ L2 ⎞ 0 ⎟ (44)
⎜ ⎟ − 2 ⎝ 2⋅ π ⎠ the sum of the output-noise, divided by
L2 ( s ) := 10⎝ ⎠ ⋅ f2 ⋅ ⎛⎜
10 2 s ⎞ N, which appears as an error signal at
⎟ (43)
Combining these noise contribu- the phase detector and is acted on by
⎝ 2⋅ π ⎠
and the broadband white noise due tions results in an overall noise model the equivalent transfer function.
to thermal noise and the noise figure of the oscillator, Loscn(s), as described The phase noise due to the loop’s
of the active device is modeled by ap- by Eq. 45. action on the n = 0 component of os-
plying Eq. 44. Figure 15 shows a plot of modeled cillator noise can be described by the
Open-loop phase versus frequency Closed-loop magnitude versus frequency

+180 101
91
ang[(|G'ol(jω)|](180/π)
+90 81
20log[(|Tr'(jω)|]
71
61
0 51
41
31
–90 21
11
–180 1
100 1 x 103 1 x 104 1 x 105 100 1 x 103 1 x 104 1 x 105
ω/2π ω/2π
10. This plot shows the open-loop phase with sampling in a plot of 11. This plot shows the closed-loop transfer response with sampling
open-loop phase as a function of frequency. (closed-loop magnitude versus frequency).
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DesignFeature
− 1 5
Loscn ( s ) := L0 ( s ) + L2 ( s ) + L3 ( s ) (45) L'oscn1 (s , fs ) := ∑ (
Loscn s − j ⋅ ω s ⋅ n + ) ∑ (
Loscn s − j ⋅ ω s ⋅ n ) (48)
n =− 5 n =1
⎛ Tr' (s , fs ) ⎞ (s , fs )
2
L'oscn1
Losc2 (s , fs ) := ⎜ ⎟ ⋅ (47)
Losc (s , fs ) := Losc2 (s , fs ) + Losc1 ( s ) (49)
⎝ N ⎠
( 1 + G'ol (s , fs ) )
2
parameter Losc1(s) as defined in Eq. 46: Z(s) = the impedance of the loop filter
Loscn ( s )
Losc1 ( s ) := (46) Equation 50 can be simplified to Eq. 51:
(1 + Gol ( s ) )
2
Re( Z ( s ) )
Lmod ( s ) := ⎛⎝ 2⋅ Kω vco ⋅ k ⋅ T ⎞⎠ ⋅
2
⎯ (51)
In addition, the phase noise due to the loop’s action on s⋅s
the n ≠ 0 component of oscillator noise can be described by
the parameter Losc2(s, fs) as defined in Eq. 47. This noise combines with the VCO phase noise before
The noise of oscillator after sampling Lʹoscn1 is given by being modified by the loop, yielding Eq. 52:
Eq. 48.
The overall noise due to the oscillator in the loop, Losc(s, Losceff ( s ) := Lmod ( s ) + Loscn ( s ) (52)
fs), is the sum of the two components of oscillator noise as
shown in Eq. 49. The combination of the modulation and phase noise is de-
These various components of phase noise for the oscilla- picted in Fig. 17, while the sampled version of the combined
tor are plotted in Fig. 16, where VCO noise and modulation ti noise is depicted in Eq. 53.
Losc is the total contribution to the overall noise after L'osceff (s , fs ) := ∑ Losceff (s − j ⋅ ω ⋅ n)
s (53)
the action of the loop; Loscn is the noise of the free running
oscillator; Losc1 is the noise due to the n = 0 component; n =− 5
and Losc2 is the noise due to n ≠ 0 components. The phase noise due to the loop’s action on the n = 0
Thermal noise, due to the real part of the impedance of
the loop filter, modulates the VCO to give phase noise at Closed-loop phase versus frequency
the output of the VCO. In performing thermal noise calcu- 200
lations, the absolute temperature, T, is 290 K while Boltz-
arg[Tr'(jω)] × 57
100
mann’s constant, k, is 1.38 x 10-23 mKs. From FM theory,
the SSB noise due to modulation by thermal noise is given 0
by Eq. 50: 2
⎛ Kω vco ⎞ Re( Z ( s ) )
Lmod ( s ) := ⎜ ⎟ ⋅ 8⋅ k ⋅ T ⋅ –100
⎝ 2⋅ π ⎠
2
⎯⎛ 1 ⎞ (50)
s ⋅ s ⋅ ⎜ 2⋅ ⎟ –200
⎝ 2⋅ π ⎠ 100 1 x 103 1 x 104 1 x 105
ω/2π
where
13. This plot shows the closed-loop phase with sampling.
–30
–40
–50
–60
–70
–80
–90
–100
–110
–120
–130
–140
–150
–160
–170
10 100 1 x 103 1 x 104 1 x 105 1 x 106
ω/2π
14. The phase noise of a free-running VCO can be broken into different
12. This plot shows the closed-loop response of the test PLL. segments.

DesignFeature
⎛ Tr'(s , fs ) ⎞ (s , fs )
2
component of oscillator noise can be found from Eq. 54 L'osceff1
Losceff ( s ) Losceff2 (s , fs ) := ⎜ ⎟ ⋅ (55)
Losceff1 ( s ) := ⎝ N ⎠
( 1 + G'ol (s , fs ) )
2
(54)
( 1 + Gol ( s ) )
2
where L'osceff1(s,ffs) is given by Eq. 56:

The phase noise due to the loop’s action on the n ≠ 0
− 1
component of oscillator noise can be found from Eq. 55,
L'osceff1 (s , fs ) := ∑ Losceff (s − j ⋅ ω ⋅ n )
s
n =− 5
5 (56)
Oscillator phase-noise model
0 + ∑ Losceff (s − j ⋅ ω ⋅ n)s
–20
n =1
–40
10log[|Loscn(jω)|]
–60 The overall noise, Losctot (s,ffs), due to the oscillator and
–80 the noise due to modulation of the oscillator by thermal
–100 noise in the loop filter components is the sum of the ab-
–120 solute value of the two components of oscillator noise as
–140 shown by Eq. 57:
–160
–180
10 100 1 x 103 1 x 104 1 x 105 1 x 106
Losctot (s , fs ) :=
ω/2π (57)
Losceff2 (s , fs ) + Losceff1 ( s )
15. This plot shows modeled noise for the free-running VCO.
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DesignFeature
–60 Combined modulation and phase noise

–75 0
–20
10log[|Losc(jω,ffs)|] –90 –40
10log[|Loscn(jω)|] 10log[|Loscn(jω)|] –60
–105
10log[|Losc1(jω)|] 10log[|Lmod(jω)|] –80
–120 –100
10log[|Losc2(jω,ffs)|] 10log[|Losceff(jω)|]
–120
–135
–140
–150 –160
100 1 x 103 1 x 104 1 x 105 10 100 1 x 103 1 x 104 1 x 105 1 x 106
ω/2π ω/2π
16. Various oscillator loop components of phase noise are plotted here. 17. The combination of modulation and phase noise is depicted here.
In performing an analysis on the effect that the phase-detector compo- chip from National Semiconduc-
phase-detector noise, the term “phase- nents have on the loop is essentially tor used in the test PLL, the value is
detector noise” is used to include the same irrespective of the cause or equivalent to approximately -163 dBc/
noise due to the charge pumps, the source of the noise. Hz at a comparison frequency of 25
reference dividers, and the program- The phase-detector noise for any kHz. Often, the measure termed “fig-
mable dividers since it is not possible given chip at a particular comparison ure of merit” (FOM) is used by com-
to isolate the cause of noise within frequency is usually determined by ponent manufacturers where the noise
the individual components or func- means of measurements with a spec- is referenced to a 1-Hz bandwidth.
tion blocks in many single-chip PLLs. trum analyzer or phase-noise test set. From this FOM, the noise can be
For any given sampling frequency, the Typically, for the model LMX1511 extrapolated for any sampling fre-
quency. This relationship usually
holds over a wide range of frequen-
cies but may eventually break down
RF & Microwave at higher frequencies.
Next month, the final installment
Design Software in this three-part article series will
Ap
ppl
p ied Comp
putational Sciences point out some differences in the ef-
fects of phase noise in continuous-
www.appliedmicrowave.com time and sampled PLL sources, using
computer simulations and measured
• Exact Circuit Synthesis data for comparisons. The noise due
to the reference oscillator in a PLL
• Accuratte Simullattion frequency synthesizer will be ana-
• Powerful Optimization
timization lyzed, and then combined with other
noise sources in an overall evalution
• Statistical Yield Analysis of the effects of sampling on a test
• Free Tecchnical support PLL circuit. By using simulations, it
is possible to understand the influence
p l ete es of specific noise sources, such as the
Com gn suit k! phase detector noise, on the overall
i
des nder $1 noise performance of a PLL system,
for u
and how those different contributions
compare in a contant-time PLL versus
a sampled PLL system. In addition,
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next month’s final installment of this
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DIFFERENTIAL PORTS
DesignFeature
Match The Ports Of

Differential Devices
This straightforward approach shows how to match the
impedances of high-frequency, differential devices both with
discrete components and microstrip circuit elements.
until the performance, i.e., the output power for a trans-

STEPHANE WLOCZYSIAK mitter or the noise figure for a receiver, is met;
Principal RF System Engineer
2. Measuring the Z that must be matched (this is done in
Skyworks Solutions, Inc., 5221 California Ave., Irvine, CA 92617-3073; (949) 231-
3045, FAX: (949) 231-3206, e-mail: [email protected], Internet: the same way that the optimum impedance is measured);
www.skyworksinc.com. and
3. Determining the matching circuit that tunes Z to Zopt.
To perform impedance matching on an example two-
D
ifferential or balanced devices are widely port network (Fig. 1), a VNA was used to measure the RF
used in communications systems for their impedance at the network’s ports, resulting in the single-
high immunity to noise. However, they can mode S-parameter (Ssm) matrix of Eq. 1. The variables a1
be difficult to integrate since the widely used and a2 represent incident waves while b1 and b2 represent
S-parameter matching method cannot simply reflected waves.
be applied. Fortunately, a generic method de- ⎛ b1 ⎞ ⎛a ⎞
rived from the mixed-mode S-parameter concept can be ⎜⎜ ⎟⎟ = S sm × ⎜⎜ 1 ⎟⎟ (1)
b
⎝ 2⎠ ⎝ a2 ⎠
used to match differential devices. It is simple and effective,
as will be borne out by verification via four-port vector where
network analyzer (VNA) and analysis with electronic-de- ⎛ s11 s12 ⎞
S sm = ⎜⎜ ⎟
s 22 ⎟⎠
sign-automation (EDA) software. (A)
⎝ s21
Impedance matching is the practice of tuning a load
impedance (Z) to the optimum impedance (Zopt) of a con- Equation 2 details the relationship between the
nected device. It requires three main steps: S-parameters and impedance:
1. Finding Zopt (the process is not detailed here but is usu- ( 1 + sii )
ally achieved by tuning the load impedance of the circuit Zi = Z0 × ( i ∈ [ 1,2 ]) (2)
( 1 − sii )
a1 i1 while Eq. 3 calculates the voltages and currents at the
1
two nodes:
1 b1
⎛ v1 ⎞ ⎛ v1+ + v1− ⎞ ⎛ Z 1 × i1 ⎞ ⎛ Z1 × ( i1+ − i1− ) ⎞
v1 ⎜⎜ ⎟⎟ = ⎜ ⎟=⎜ ⎟⎟ = ⎜ ⎟ (3)
⎜ + −⎟ ⎜
⎝ v2 ⎠ ⎝ v 2 + v 2 ⎠ ⎝ Z 2 × i2 ⎠ ⎝ Z 2 × ( i2 − i2 ) ⎟⎠
⎜ + −
ad vd
bd Z Z
where vi+ and ii+ represent the forward voltage and current,
a2 i2 respectively, and vi– and ii– represent the reverse voltage
2 and current, respectively.
2 b2
v2 For differential circuits, S-parameter theory has been ex-
tended to introduce the concept of mixed modes.1,2 There-
fore, Fig. 1 could represent either a two-port single-ended
1. These diagrams represent single-ended and differential mode circuit or a single-port mixed-mode circuit. The model has
power wave and voltage/current circuits. two modes of propagation: common mode and differen-

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DIFFERENTIAL PORTS
HIGH RELIABILITY FILTERS DesignFeature

Delivered on-time
to your specifications
tial mode, which are also 1 1
referred to as even and ac = (a1 + a2 ) and bc = (b1 + b2 ) (4)
2 2
odd mode when consid-
ering each port separate- 1 1
ly. For both modes, in-
ad = (a1 − a2 ) and bd = (b1 − b2 ) (5)
2 2
cident waves ac, ad, and
reflected waves bc, bd, as ⎛ bd ⎞ ⎛b ⎞ ⎛a ⎞ ⎛a ⎞
⎜⎜ ⎟⎟ = M × ⎜⎜ 1 ⎟⎟ and ⎜⎜ d ⎟⎟ = M × ⎜⎜ 1 ⎟⎟ (7)
well as voltages and cur- ⎝ bc ⎠ ⎝ b2 ⎠ ⎝ ac ⎠ ⎝ a2 ⎠
rents vc, vd, ic, and id are
Bandpas
pass Filter
defined using Equations
SMA
SM
MAA Connectors
4 through 10.
Eqn: Sdd =0.5*(S(3,3)+S(4,4)-S(3,4)-S(4,3))
1 ⎛ 1 − 1⎞
If: M = ⎜⎜ ⎟⎟ (6) S11calc S11sim
freq = 2.450 GHz freq = 2.450 GHz
2 ⎝1 1 ⎠ Sdd = -0.361 +j0.374 S(1,1) = -0.351 +j0.361
impedance = 36.68 + j37.5 impedance = 38.15 + j36.9
then, as shown in Eq. 7, and
Bandppass Filter 1
SMT
MT Tab CConnections vc = (v1 + v2 ) and ic = (i1 + i2 ) (8)
2 SS11c
1 alc
1
vd = (v1 − v2 ) and id = (i1 − i2 ) (9)
S 1si
S11si
1simm
2
⎛ vd ⎞ ⎛ Z d × id ⎞
⎜⎜ ⎟⎟ = ⎜⎜ ⎟⎟
S(1,1)
Notch
otch Filter (10)
Sdd
SMAA Connectors ⎝ vc ⎠ ⎝ Z c × ic ⎠
For the mixed-mode analysis, when
referencing the signal to ground, the
even and odd impedances (Ze and Zo)
Lowpass Filter of each port are also defined. If the
BNC CConnectors
t device structure is symmetrical, Ze freq (2.400 to 2.500 GHz)
= 2Zc and Zo = Zd /2. Mixed mode
S-parameters are defined by: 2. The Smith Chart compares simulated ver-
sus measured differential input impedances
⎛ bd ⎞ ⎛a ⎞ using the SKY65336-11 FEM.
⎜⎜ ⎟⎟ = S mm × ⎜⎜ d ⎟⎟ (11)
⎝ bc ⎠ ⎝ ac ⎠
Each of the cross-mode parameters
where Smm is represent the amount of transfer from
⎛ sdd scd ⎞ common to differential mode, and vice
Diplexerr S mm = ⎜⎜ ⎟ (12)
SMA
MAA Conn
nnectors ⎝ sdc scc ⎟⎠ versa, that propagates through the
3-polele Ceramic Filte
3- Filter circuit. For an ideal balanced circuit,
SMT Connectiton
ons and Sdd refers to the differential mode mixed terms Sdc and Scd are zero.
Equalizer Filter S-parameter needed to determine the As part of achieving impedance
SMAA Connecto
ctor
ctorrs differential impedance; Scc is the com- matching, a goal is to determine the
mon-mode parameter; and Sdc, Scd are differential-mode circuit impedance
cross-mode parameters. Zd. For this purpose, only the dif-
ferential mode propagation must be
evaluated (the common-mode propa-
gation can be omitted). There is no
1' 1 RF common source (ac = 0) even if
Zopt C
Z
L the DC supply can be present on each
side of the balanced port.
Bockelman et al.2 demonstrates
2' 2 that mixed-mode parameters can be
derived from-single mode parameters:
800-642-2587 www.diplexers.com 3. This is a typical inductive-capacitive (LC)
MADE IN USA impedance matching network. (S mm )= M × S sm × M −1 (13)

DIFFERENTIAL PORTS
DesignFeature
1' 1 1' 1
Zopt C Zopt 2C
Therefore, Smm can be redefined as: Z Z
L L
(See Equation 14) 2C
Assuming the circuit shown in Fig. 1
is perfectly balanced, parameters S11 and 2' 2 2' 2
S22 are equal as are S12 and S21. Therefore, (a) (b)
from Eq. 14, Sdc and Scd are zero. Using
Eq. 2, the differential impedance can be L L/2
1' 1 1' 1
expressed as: Zopt Z Zopt Z
C C
( 1 + sdd )
Z d = Z0d × (15) L/2
( 1 − sdd )
2' 2 2' 2
where Z0d is the differential reference im- (c) (d)
pedance and is defined by
Z0 d = 2 × Z0 4. These four diagrams represent single-ended and differential LC equivalent-circuit matching
(16)
networks.
From Eqs. 14 and 16, Zd can be defined
as Eq. 17. arrangement. The normalized (50-Ohm reference) 2450-
The SKY65336-11 front-end module (FEM) from Sky- MHz single-mode S-parameters of the differential trans-
works Solutions (www.skyworksinc.com) served as an ex- mit input were measured and plugged into Eq. 1 to yield
ample of a device that might be matched in a differential Eq. B.
Solving Eq. 12 for Sdd where the differential reference
⎛ s11 − s12 − s21 + s22 s11 + s12 − s21 − s 22 ⎞
(S mm ) = 1 × ⎜⎜ ⎟ (14) impedance, Z0d, is 100 Ohms yields Sdd = -0.361 + j0.374.
2 ⎝ s11 − s12 + s 21 − s22 s11 + s12 + s21 + s 22 ⎟⎠ Solving Eq. 17 for Zd yields Zd = 36.6 + j37.5 Ohms.
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DIFFERENTIAL PORTS
DesignFeature
Z0, L0 TLIN
1' 1 + TL2 +
TLIN
Zopt C TTerm TL6
Z=100 TTerm
Z1 Z T
Term12 E=20 T
Term11
Z=200
L1 L Num=9
Z=100
E=52
F=2.450 GHz Num=10
Z = 38+j37
C – F=2.450 GHz
–
Z0, L0
2' 2
TLIN
TL3
Z=100
5. These diagrams show differential and half E=20
F=2.450 GHz
single-ended equivalent matching networks.
TLIN
The differential-mode S-parame- + TL4 +
TLIN TTerm
ter, Sdd, was also simulated using the TTerm
T
Term10
TL5
Z=100
E=20 T
Term9
Z=200
Advanced Design System (ADS) suite Num=7
E=26
F=2.450 GHz Num=6
Z=19 +j18.5
Z=50
F=2.450 GHz
of simulation software programs from – –
Agilent Technologies (www.agilent.
com). Results were plotted on a Smith
Chart (Fig. 2). The single-mode, S- 6. These examples show differential and half
parameters derived from the software single-ended matching networks.
simulation agreed with measurements
using a four-port VNA. 50-Ohm Smith Chart 100-Ohm Smith Chart
The process of impedance matching m1 = SHALF m2 = SDIFFERENTIAL
involves tuning a device’s port imped- S(7,7) = 0.784/10.949 S(9,9) = 0.784/104/949
impedance = 9.6 + j37.5 impedance = 19 +j75
ance to a required impedance. The use
of discrete inductors and capacitors m11
m2
is an easy way to achieve impedance
matching. If area is not a constraint,
using transmission lines and stub tun-
er elements is a cost-competitive alter-
nate solution. This method provides a
S(7,7)
S(9,9)
lower loss but is not as flexible as us-

ing discrete elements since new match-
ing means a new printed-circuit-board
(PCB) design.
Using a shunt element, a balanced
circuit keeps its symmetry because
the element is placed between two
freq (2.400 to 2.500 GHz)
ports. When a series component is
introduced, the circuit is no longer 7. This is a comparison of differential and half
symmetrical. When lumped elements single-ended matching networks.
L and C are added to the balanced
load, Z (S11 and S22 are equal), S1’1’ where XC and XL represent the imped-
and S2’2’ of the matched load, Zopt, are ance (purely imaginary) of the ideal
now different (Fig. 3). Based on Eqs. capacitor and inductor, respectively.
12 and 14, mixed terms Sdc and Scd of Equation 18 can be rewritten as:
the matched circuit are no longer null. 1 1
Circuit symmetry can be easily real- Z opt = + + ( jLω || Z ) (C)
j 2Cω j 2Cω
ized by evaluating the impedance of
the matched port, Zopt, of circuit A in This equation provides the imped-
Fig. 4, which is given by: ance of circuit B in Fig. 4 and, there-
fore, demonstrates that circuits A
(See Equation 18) and B are equivalent. However, only
circuit B maintains the symmetry
(S1’1’ = S2’2’).
1
Z opt = X C + ( X L || Z ) = + ( jLω || Z ) (18) The impedance of the
jCω
circuit C in Fig. 4 can be

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r Engine
IF/RF MICROWAVE COMPONENTS 377 rev S
DIFFERENTIAL PORTS
DesignFeature
( 2 + s11 − s12 − s21 + s22 )

Z d = 2 Z0 × (17)
( 2 − s11 + s12 + s21 − s22 )
⎛ − 0.083 + j × 0.478 − 0.372 + j × 0.199 ⎞

S sm = ⎜⎜ ⎟⎟ (B)
⎝ − 0.361 + j × 0.207 − 0.0714 + j × 0.675 ⎠
calculated by:
1
Z opt = X L + ( X C || Z ) = jLω + ( || Z ) (D)
Cω
jC
which can be rewritten as:
jLω jLω 1
Z opt = + +( || Z ) ((E)
2 2 jCω
In this case, circuit D in Fig. 4 is equivalent to circuit C
in Fig. 4.
When working with transmission-line impedance
matching, the simple transformation of the series element
described above will not work. However, there is another
simple technique available.
As shown in Fig. 5 (where Zi and Li denote the trans-
mission line impedance and length, respectively), the bal-
anced differential circuit is divided into two identical half
single-ended structures. The dividing line is at the ground
potential because of the circuit symmetry. The result is that
the series elements of both single-ended and differential cir-
cuits are identical, although the shunt element is cut in half
50-Ohm Smith Chart 100-Ohm Smith Chart

SKY65336
K Optimum load
S(1,1) = 0.406/85.090 S(5,5) = 0.792/64.950
impedance = 38.146 +j36.904 impedance = 19.500 +j75.000
Serriees L Optimum
Series mum load
Optim looad
SKY65336
SKY65336
SShunt
hunnt L
S(5,5)
S(1,1)
freq (2.400 to 2.500 GHz)
8. This example matches the SKY65336-11 transmit RF differential

input to the Ember EM250 transceiver by means of a 6.8-nH shunt
inductor and series 2.8-nH series inductor.

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"# %"#+ %$ ") (!"$#
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&

DIFFERENTIAL PORTS
DesignFeature
1 1
19.5 1' 19.5
2.8 nH + 1' 1.4 nH
+ 38
(including the loads, Z and Zopt). j75 Ohms 38 j75 Ohms
6.8 nH + 6.8 nH +
Rather than matching Z to Zopt, the j37 Ohms j37 Ohms
1.4 nH
new exercise becomes matching the
half circuits, or matching Z/2 to Zoptt/2. 2' 2 2' 2
Eventually, a fully differential matched
circuit is derived by bringing half struc- 9. A circuit transformation helps realize the symmetry needed for differential transmission lines.
tures back together. Note that this tech-
nique can be also used with lumped elements (Fig. 5). that the coupling between the two lines is negligible, the
For example, a differential Z circuit and a single-ended differential and common modes propagate uncoupled, and
Z/2 circuit are shown in Fig. 6 (with Z = 38 + j × 37 Ohms the characteristic impedance of the differential mode is giv-
and Z/2 =19 + j × 18.5 Ohms). Parameter E in the transmis- en in ref. 5: Z0d_microstrip = 2Z0_microstrip, where Z0_microstrip is
sion-line model refers to the electric length or phase shift the characteristic impedance of the single microstrip line.
(in deg.), or E = 360(L/λ
/ ). The transmission impedance needed to connect the dif-
The simulation results shown in Fig. 7 demonstrate that ferent devices still must be determined. Usually, a 50-Ohm
the single-ended circuit is matched to Zoptt/2 and, using the trace impedance is used as a standard to interconnect sin-
transformation described above, the differential is actually gle-ended devices. For differential devices, several standard
matched to Zopt. The Smith Chart reference impedance of impedances (e.g., 50, 75, and 100 Ohms) are widely used.
the single-ended circuit is 50 Ohms, with an impedance of PCB stack-up constraints include minimum reliable trace
100 Ohms for the differential circuit. width and PCB cost; both contribute to the final design.
Differential impedance matching can be shown by an Assume a PCB stack up with H = 8 mil, dielectric rela-
example: matching the SKY65336-11 ZigBee FEM to the tive permittivity (εr) of 4.3, conductance of 59.6e+6 S/m,
model EM250 transceiver from Ember (www.ember.com). and thickness (t) of 1.4 mil, and loss tangent of 0.02. A
The transmit and receive differential-port S-parameters 75-Ohm reference impedance transmission line design has
for the SKY65336-11 and the SKY65337-11 FEMs were narrower traces compared to a 50-Ohm line. That allows
measured; their corresponding differential impedances are such a design to be spaced out more to minimize the cou-
listed in the table. Various ZigBee-compliant transceivers pling, which is always difficult to estimate. The match-
are available with different RF port impedances. They also ing circuit shown in Fig. 10 is composed of two identical
specify Zopt, which represents the impedance that the trans- 75-Ohm transmission lines, TL1 and TL2, and one shunt
ceiver should see for best performance. Ember4 suggests an inductor, L1, that tune the load impedance Z/2 to Zopt/2.
optimum reflection coefficient of 0.79/65 deg. (expressed Since a 75-Ohm trace impedance is used for matching in
in magnitude and phase) for maximum transmit power and this example, the Smith Chart reference impedance should
best sensitivity. The reference impedance is 50 Ohms. This also be 75 Ohms so that when a transmission line is add-
corresponds to a load impedance (Zopt) of 19.5 + j75 Ohms ed to the load, Z, the impedance navigates on a constant
or 308 Ohms in parallel with an inductance of 5.2 nH. VSWR circle (Fig. 11).
The SKY65336-11’s transmit impedance of Z = 38 + To create a microstrip line with an impedance of 75
j37 Ω is matched to the Ember transceiver’s Zopt = 19.5 + Ohms and an electrical length of 10 deg., Eqs. 19 and 20
j75 Ohms, with both impedances represented on a Smith
Chart (Fig. 8). The two traces (shown with arrows) show ( ε r + 1.41 )
the course of impedance Z by adding a shunt inductor −( Z 0 ⋅ )
( 5 . 98 × He 87 −t )
(6.8 nH) and a series inductor (2.8 nH). The differential W= (19)
structure of Fig. 9 results from applying the impedance 0.8
transformation approach.
Even the most compact, practical board design includes
transmission lines to connect the different components.4
TLIN TLIN
Traces from the source and load devices to the lumped + +
TL2 TL1
matching elements contribute to impedance matching and Term Z=75 Z=75 T
Term
must be taken into account especially at high frequencies. T
Term`0 E=10 E=10 Z
Num=7 F=2.450 GHz L Num=8
For a differential circuit, the two traces must be identical to F-2.450 GHz
Z=75 L1 Z=19+j18.5
maintain symmetry, which means the same length, width, – L=3.75 nH
–
and distance to ground. For such differential transmission
lines, coupled microstrip lines are often used. The character-
istic impedance of the differential mode in these transmis-
sion lines can be analyzed using the mixed-mode concept. 10. This schematic diagram shows an ideal single-ended matching net-
Assuming the structure is symmetric, the differential, and work using distributed and lumped circuit elements.

DIFFERENTIAL PORTS
DesignFeature
are used to compute the width (W = a Smith Chart (Fig. 14, web only),
75-Ohm Smith Chart 6 mils) and the length (L = 80 mils) of which confirms that the differential
Single ideal SKY65336
K the microstrip line: matched load – S(5,5) on the plot –
S(7,7) = 0.815/126.043 S(1,1) = 0.616/150.585 (See Equation 19) is Zopt (19.5 + j75 Ω). This point on
impedance = 9.589 +j37.682 impedance = 19.000 + j18.500 ( the chart is slightly different because
E of the approximation of the trans-
L= (20) mission line (negligible coupling
T × f 0 × 360
Sinngle
glle id
Single ide
ideal
deeal between the two microstrip lines).
TL2
Constant
L1 where H is the dielectric thickness (8 However, because the matched load
conductance mils), εr is the dielectric relative per- close, the approximation has no ef-
circle
SKY65336
SKY65336 mittivity, t is the conductor thickness, fect on performance.
TL1
f0 is the frequency (2.45 GHz), E is
S(7,7)
S(1,1)
REFERENCES
the electrical length (10 deg.), and T
1. David E. Bockelman and William R. Eisenstadt, “Com-
is the propagation delay. The actual bined Differential and Common-Mode Scattering Param-
eters: Theory and Simulation,” IEEE Transactions on Micro-
single-ended structure is shown in wave Theory and Techniques, Vol. 43, No. 7, July 1995.
Fig. 12 (web only, www.mwrf.com). 2. David E. Bockelman and William R. Eisenstadt, “Pure-
Mode Network Analyzer for On-Wafer Measurements of
Constant Assuming there is no coupling be- Mixed-Mode S-Parameters of Differential Circuits,” IEEE
VSWR Transactions on Microwave Theory and Techniques, Vol.
circles tween the two single-ended transmis- 45, No. 7, July 1997.
freq (2.400 to 2.500 GHz) sion lines, the differential structure 3. PCB Design with an EM250. Ember Application Note
5059, 27 March 2009.
as described in the previous section is 4. Front-End Module reference design files located at
11. This example matches the SKY65336- derived by combining the two single- http://ember.com/zip/REF_DES_SKY65336_SKY65337.
zip.
11 transmit differential input to the Ember ended structures as shown in Fig. 13 5. A.G. Chiariello, A. Maffucci, G. Miano, F. Villone, and
EM250 transceiver using distributed and (web only, www.mwrf.com). W. Zamboni, “A Transmission-Line Model for Full-Wave
Analysis of Mixed-Mode Propagation,” IEEE Transactions
lumped circuit elements. The results were compared on on Advanced Packaging, Vol. 31, No. 2, May 2008.

CLASS E POWER AMPS
DesignFeature
Optimize Class E
Power Amplifiers
By tuning load impedances, it is possible to achieve
60-percent efficiency from 1.9 to 2.2 GHz with a Class E
amplifier based on a 10-W GaAs pHEMT device.
sible, although in practice component

GAYLE COLLINS tolerances and finite on-resistance Vdd
RFIC PA Designer Idc
of the switching transistor limit ef-
JOHN WOOD ficiency. To explore the limits of the
Senior Member of the Technical Staff Class E topology, an amplifier using i(t) Ls Cs
SARMUD MUSA lumped-element matching compo- isw(t)
RF Design Engineer nents was designed based on a 10-W ic(t) vc(t)
Freescale Semiconductor, RF Division, Tempe, AZ; GaAs pHEMT model MRFG35010 irf sin(ωt) RL
e-mail: [email protected], Internet: www. Cp
freescale.com/RFpower
packaged transistor from Freescale
Semiconductor (www.freescale.com).
It achieves its high performance in
A
mplifier efficiency is es- part by presenting the correct har- 1. This schematic shows an idealized Class E
sential not only for mobile monic terminations2 transformed to circuit used for the time-domain analysis.
devices, but increasingly the device package plane.
to conserve power con- The amplifier’s drain efficiency quency. The approach was then ex-
sumption in wireless com- was greater than 74 percent when tended to achieve greater bandwidth
munications base stations fabricated on a standard printed-cir- and produced average efficiency of
and cell sites. The Class E amplifier cuit board (PCB) at 2.55 GHz—one 56.8 percent from 1.8 to 2.7 GHz
in this article produced efficiency of of the highest efficiencies reported us-
and 60 percent from 1.9 to 2.2 GHz.
60 percent from 1.9 to 2.2 GHz using ing a packaged transistor at this fre- Classical analysis of the Class E
a standard packaged tran- switching amplifier mode
sistor.1 The techniques used
was performed in the time
to design and build this am- domain3,4 using a simplified
plifier can be employed to
version of the time-domain
design Class E amplifiers at analysis5 to obtain the initial
any frequency of interest. Class E design parameters.

The Class E amplifier The analysis was extended
has been extensively stud- to include the package im-

ied and is relatively easy to pedances of the transistor,
implement.2-5 By allowing and the harmonic termina-

the drain shunt capacitance tions were then determined

to be discharged when the at 2.5 GHz and realized us-
instantaneous RF voltage ing discrete components. The
crosses zero switching losses broadband design was real-
can potentially be eliminat- 2. This Class E schematic shows equivalent admittance yeq and trans- ized using distributed circuit
ed. This makes 100-percent mission matrix caused by the package equivalent circuit components matching networks with the
efficiency theoretically pos- and transistor output capacitance. matching circuit designed to

CLASS E POWER AMPS
DesignFeature
provide optimal harmonic impedanc- 20 4
Capacitor current—A
es from 1.8 to 2.7 GHz.
Drain voltage—V
15 3
The simple circuit for this analy- 10 2
sis (Fig. 1) was modeled as an ideal 5 1
switch in parallel with a capacitance 0 0
(Cp) consisting of the transistor’s –5 –1
0 50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800
output capacitance (Cds) in parallel Time—ps
with capacitance that must be added
to obtain the correct switching times 3. These curves show simulated current and voltage waveforms for the nonlinear model.
for the circuit (that is, to yield zero-
voltage switching to reduce switching over a range of switching frequencies yields optimum efficiency and power
losses). The output circuit contains a and switch conduction angles (α) for output.5 The analysis also showed
series resonator so that only funda- a given drain bias on the transistor. A that by careful choice of operating
mental current flows in load resistor conduction angle of 110 to 120 deg. frequency, conduction angle, and cir-
RL. The optimal load for RL cuit parameters, all parallel
was transformed from 50 Load angles and simulated efficiencies for capacitance can be delivered
Ohms in the design. fundamental, second, and third harmonics by the output capacitance of
The analysis assumes that LOAD IDEAL, IDEAL WITH RESONATOR: RESONATOR: the device, eliminating the
the switch is either “on” IMPEDANCE: NO MATCH REAL MATCH, REAL MATCH, need for an additional ca-
MAGNITUDE MATCH IDEAL CHOKE REAL CHOKE
(shorting the output capaci- AND ANGLE pacitor at its output.
tance so all current flows in The transistor package
7.08. 6.88/36.95 5.284/34.42 6.70/38.05
the switch element) or “off” 3627 deg. deg. deg. was modeled as a T-network
(an open circuit), and the deg. equivalent circuit between
output capacitance is part Second 11.07/- 9.86/89.90 10.16/86.02 9.08/-84.67 the device output plane and
of the resonator circuit. As harmonic 85.13 deg. deg. deg. the circuit. The series induc-
deg.
a result, the circuit is char- tors represent the bond wires
acterized by two resonant Third 3.73/- 2.89/- 10.45/-89.0 0.524/18.64 and the package tab, and the
harmonic 85.73 89.99 deg. deg. deg.
circuits with different load- deg. shunt capacitor is a parasitic
ing or quality factors. Time- capacitance to ground of
Efficiency 81.5 81.0 78.48 76.87
domain analysis is performed the connecting components
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CLASS E POWER AMPS
DesignFeature
through the plastic pack- Second harmonic

age. With these package
Third harmonic
components in place,
only Cds is shorted when
the switch is closed. This
difficulty was overcome
in the analysis by includ-
ing the package imped-
ances in the resonant
circuit when the switch is
closed. When the switch Fundamental
is open, the package
components are accom-
modated as part of drain
shunt capacitance Cp.
The transistor output
Frequency: 2 to 8 GHz
capacitance can be com-
bined with the package 4. Target (circles) and tuned measured (squares) half-board
equivalent circuit compo- impedances at fundamental, second, and third harmonic
nents to produce a trans- frequencies.
mission matrix between
the switch and the Class E amplifier the MRFG35010 is +12 VDC, it was
circuit. This transmission matrix is derated to +8 VDC. With this bias, a
then factored into an effective capaci- conduction angle of 128 deg. yields
tance (Ceq), and a reduced transmis- optimum efficiency and power output
sion matrix (Fig. 2)6. Equation 1 is ul- and the total parallel capacitance is
timately obtained, which shows that 7 pF at 2.5 GHz. This operating fre-
the package parasitics increase the quency was chosen so that Cp = Ceq
capacitance at the transistor drain: and no additional external capacitor
is required. Other parameters for this
yeq = jωCds{1 + [Lpkgg/(Lbond + Lpkg + fundamental frequency are:
LpkgLbond/Cpkg)]} (1) rMPBESFTJTUBODF 3- PG0INT
rMPBEBOHMFEFH
The equivalent ca-
pacitance will always be
greater than Cds, and by &$%#"
a suitable choice of op-
&$%#"
erating frequency, drain &$%#"
bias, and conduction &$%#"

angle, the required paral- &$%#"

lel capacitance for Class &$%#"
E operation can be met &$%#"
by the equivalent shunt
capacitance Ceq. The
equivalent shunt capaci-
tance presented to the
transistor can be tuned
with the bond wire.1
In Class E, the in-

stantaneous drain volt- ! ! ! ! ! ! ! !

age can be more than
three times the DC drain 5. This plot shows the measured drain efficiency of the Class E
bias (Vdd). As the recom- power amplifier at a drain bias of +8 VDC for various gate bias
mended drain bias for voltages.

CLASS E POWER AMPS
DesignFeature
Drain connection 50-Ohm load

rSFTPOBUPSGPSNFEPG-TO)BOE XBWFGPSNBUUIFESBJOJTDSFBUFEGSPN
CTQ'BOE UIFJOUFSBDUJPOPGUIFDVSSFOUDPNQP
rUVOJOHJOEVDUBODF E-
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5IFBTTVNQUJPOGPS$MBTT&EFTJHO JNQFEBODFQSFTFOUFEBUUIFESBJO2"U
JT UIBU UIF DVSSFOU XBWFGPSN BU UIF NJDSPXBWFGSFRVFODJFTUIFOVNCFSPG
ESBJO PG UIF EFWJDF JT DSFBUFE CZ UIF BWBJMBCMFIBSNPOJDJNQFEBODFTJTMJN
BQQMJFEESJWFBOECJBT BOEUIFWPMUBHF JUFEBOEUIFTFMGSFTPOBOUGSFRVFODJFT
50-Ohm line
~λ/4 line
Narda’s High Power 6. This broadband lumped-element output

Directional Couplers matching network maintains the harmonic
impedance across the design bandwidth. It
For tough environments was realized with Genesys converted to dis-
tributed form for the circuit board design.
■ Available as directional, dual
directional, calibrated, broad PGDPNQPOFOUTIBWFBOFGGFDUPOQFS
band and high directivity GPSNBODF5IFMJNJUFEOVNCFSPGIBS
NPOJDTDPOTUSBJOTUIFPCUBJOBCMFFGGJ
models
DJFODZCFDBVTFUIFPWFSMBQPGWPMUBHF
■ Operates up to 85º C w/o BOE DVSSFOU XBWFGPSNT JODSFBTFT BT
UIFOVNCFSPGIBSNPOJDTEFDSFBTFT
degradation 5IF JNQFEBODF BOHMF BU UIF IBS
NPOJDT NVTU CF EFH UP QSFWFOU
■ TNC or type N connectors
HFOFSBUJPOPGTJHOJGJDBOUQPXFSJOUIF
IBSNPOJDT BOE UIJT EFTJHO BTTVNFT
UIFQSFTFODFPGGVOEBNFOUBM TFDPOE
BOE UIJSE IBSNPOJDT 5IF JNQFE
Shown here is the BODFUPUIFESBJOPGUIFEFWJDFBUUIF
27001A High Power
Directional Coupler
GVOEBNFOUBM TFDPOE BOE UIJSE IBS
NPOJDT CFDPNFT ; 3 K9 ;2
K92 BOE;K9'SPNSFG ;
K
3-;2 K3-
BOE; K3-8JUIUIFTFUFS
NJOBUJPOT BOE VTJOH POMZ UISFF IBS
NPOJDT UIF NBYJNVN UIFPSFUJDBM FG
GJDJFODZJTQFSDFOU2
6TJOH UIF BCPWF WBMVFT BOE JEFBM
QBTTJWFDPNQPOFOUTGPSUIFNBUDIJOH
OFUXPSL BTJNVMBUJPOXBTQFSGPSNFE
XJUI UIF OPOMJOFBS NPEFM GPS UIF
.3'( XIJDI ZJFMEFE ESBJO
435 Moreland Road
Hauppauge, NY 11788 FGGJDJFODZPGQFSDFOUBOEQPXFS
4ELs&AX BEEFE FGGJDJFODZ PG QFSDFOU BU BO
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The
he Mo
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st d Link to RF & Mic
crow
rowave
ave So
Soluttio
ions.
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5IFOFYUTUFQXBTUPSFQMBDFJEFBM
DPNQPOFOUT XJUI SFBM DPNQPOFOU
NPEFMT UIBU JODMVEF MPTTFT BOE SFTP
OBODFT5IFIBSNPOJDMPBEBOHMFTBOE
TJNVMBUFE FGGJDJFODZ GPS B E#N

CLASS E POWER AMPS
DesignFeature
input is shown in the table as the load from the device without modifying the
network is converted from ideal to in-package network. The power-add-
real model components. Load angles ed efficiency with this load network is
of about -90 deg. can be maintained more than 72.5 percent.
with real components, at least at the The drain voltage and current
second (most significant) harmonic. waveforms of Fig. 3 are obtained at
High drain efficiencies can be achieved the drain contact of the nonlinear FET
Frequency (1.8 to 5.4 GHz)
7. This plot shows the frequency response of

the output matching network for synthesized
lumped-element circuit (red, solid), optimized
distributed circuit (blue, dash), and PCB mea-
surements (green, dotted). Markers indicate
frequencies of 1.8, 2.7, 3.6, and 5.4 GHz.
model and include the effects of the

drain capacitance, which cannot be de-
embedded. The waveforms show that
the voltage and current generally do
not overlap, which indicates a high-ef-
ficiency mode. Optimum input match
was found from source-pull simulation
at +25-dBm drive. Only the fundamen-
tal input match was considered.
The amplifier was built on a
30-mil-thick RF printed circuit board
(PCB) with dielectric constant of 3.55.
Lumped components were initially
chosen for highest self-resonant fre-
quency (SRF) for best performance.
However, when tuning the second
and third harmonics, careful choice
of the component resonant frequency
can optimize their harmonic imped-
ances. A comparison between the
target impedances and the final tuned
impedances for the fundamental, sec-
ond, and third harmonic frequencies
(Fig. 4) shows close agreement with
the simulated values.
The tuned half-board was then
transferred to the complete amplifier,
and drive-up measurements were con-
ducted. The measured drain efficiency
is shown in Fig. 5 for a range of gate
biases and a drain bias of +8 VDC.
The highest efficiency is more than
70 percent for all biases and maxi-
mum power of +35 dBm. Efficiency
of more than 74 percent was achieved

CLASS E POWER AMPS
DesignFeature
Symposium,
y p Orlando, FL, 2008. 5. S. C. Cripps,
pp RF Power Amplifiers
p for Wireless
2. F. H. Raab, “Class E, Class C, and Class F Power Communications, Artech House, Norwood,

Amplifiers
p Based upon p a Finite Number of MA, 1999.
Harmonics,” IEEE Trans. Microwave Theory & 6. G. Collins, J. Wood, M. Bokatius, and M. Miller,
!%
Techn., Vol. 49, No. 8, 2001, pp.
pp 1462-1468. “A Practical Hybrid
y Class E Amplifier
p Design,”
g
$"%
(*$" 3. N. O. Sokal and A. D. Sokal, “Class E – A new IEEE Topical

p Symposium
y p on Power Amplifiers,
class of high
g efficiencyy tuned single-ended
g Orlando, FL, Januaryy 2008.
)'
)! switching gppower amplifiers,”
p IEEE J. Solid-State 7. J. K. A. Everard and A. J. King,
g “Broadband
Circuits, Vol. 10, No. 3, 1975, pppp. 168-176. power efficient Class E amplifiers
p p with a

4. F. H. Raab, “Idealized Operation
p of the Class non-linear CAD model of the active MOS
E Tuned Power Amplifier,”
p IEEE Transactions device,” Journal of Institute of Electrical &
on Circuits & Systems, Vol. 24, No. 12, 1977, Radio Engineering, Vol. 57, No. 2, 1987, pp.
pp. 725-735. 52-58.

& & & & & & & & &
&
"%#
8. Efficiency and output power are shown.
at drain bias of +6 VDC when output

power was reduced to +32 dBm. A
bandwidth of about 100 MHz was
observed (2.45 to 2.55 GHz).
Extending the amplifier to a broad-
band design was based on a distrib-
uted output load network.7 If loading
up to the third harmonic is consid-
ered, the maximum bandwidth is de-
termined when the third harmonic of
the low frequency (ffL) is coincident
with the second harmonic of the high
frequency (ffH):
Bandwidth = fH – fL
3ffL = 2ffH (2)
Ideal Class E harmonic load imped-
ances at the internal device drain were
calculated for the amplifier’s intended
range based on the simplified time-
domain analysis method. These ideal
fundamental and harmonic imped-
ances were then transformed to the
external package drain lead through
Cds and the package parasitics.
Genesys PCB design software was
used to synthesize an initial broadband
output matching network topology
based on ideal lumped elements (Fig.
6). An equivalent matching network
was then implemented in microstrip
as a distributed circuit and the line
lengths and widths were optimized
using an EM simulator to achieve the
desired impedances. The frequency re-
sponses of the synthesized circuit, op-
timized distributed circuit, and mea-
sured PCB are shown in Fig. 7, and are
in good agreement.
REFERENCES
1. J. Wood, “Overview of Class D, Class E, and
Class F p
power amplifiers
p based on a finite
number of harmonics,” p presented at the
Workshop p on Transmitter Design g for High g
Power Efficiency, IEEE Radio & Wireless

applicationnotes
Leverage COTS SOFTWARE-DEFINED-RADIO (SDR) technology has of a solution that incorporates COTS physical-
emerged as a way to help the communications layer (PHY) orthogonal-frequency-division-
Approach For industry easily modify radio devices to support multiple-access (OFDMA) algorithm modeling
SDR Designs new and emerging technologies. Compared to with an integrated design-to-test flow. That flow
traditional radios, SDRs offer an efficient and should be able to support both baseband and RF
less expensive way to enable multimode, mul- methodologies. Using the commercial algorithm
tiband, and/or multifunctional wireless devices models as a baseline starting point, engineers
that can be configured via software upgrades. can customize algorithms to create proprietary
Despite these obvious benefits, many obstacles SDR implementations. Although this application
must be overcome in the design and test of SDRs. note serves to educate readers about the firm’s
In “Addressing SDR Design and Measurement SystemVue system-design software solution, it
Challenges,” Agilent Technologies describes how offers good basic information on SDR design
commercial-off-the-shelf (COTS) technology with a WiMAX in-phase/quadrature (I/Q)
and an integrated design-to-test flow can aid modulator design example.
the rapid development of SDRs.
To develop an SDR while maximizing Agilent Technologies,
T Inc., 5301 Stevens Creek
reso
resour
urce
cess an
and
d mi
mini
nimi
mizi
zing
ng rris
isk
k an
and
d ti
time
me to
to ma
marr- Blvd
Bl vd., S
San
anta
ta C
Cla
lara
ra, CA 950
95051
51;; (4
(408
08)) 34
345-
5-88
8886
86, FA
FAX:
X:
ket, the five-page document advocates the use (408) 345-8474, Internet: www.agilent.com.
Wireless M-Bus specifies three modes of operation—all of which use subbands G1 and G2 in
the ETSI 868.0-to-870.0-MHz general usage band.
ADVANCED-METERING-INFRASTRUCTURE (AMI) time to detect sufficient preamble bits. Although

Transceiver systems have enabled utility companies to more this aspect might make it difficult to design a
System Meets efficiently collect energy, gas, and water-con- multiyear battery-powered system, Mode R
Unique Needs sumption data. Eventually, these systems will
allow consumers to monitor and control their
also is more narrowband. It allows as many as
10 channels for frequency division multiplex-
Of AMI Standard own energy consumption in real time. Yet such ing (FDM), which allows the readout of several
capabilities will require interoperability between meters simultaneously.
different manufacturers’ systems. In Europe, the The discussion of technical considerations for
Wireless M-Bus protocol, which is now detailed meeting the Wireless M-Bus standard centers on the
in the European normative (EN) standard vari- ADF7020 or ADF7021 sub-gigahertz, low-power
ant EN 13757-4, is increasingly preferred as the radio devices. The ADF7020 is suitable for opera-
standard for communication between meters. In tion in S, T, and R modes. Despite its relatively
an eight-page application note titled, “Designing narrow bandwidth in R mode, the ADF7021 is
a Wi
Wirelless T
Transceiiver SSystem to M
Meet the
h Wi
Wire- a better chhoiice for optiimiizing
i adj
djacent-channel
h l-
less M-Bus Standard,” Analog Devices’ Austin rejection (ACR) performance.
Harney discusses the EN 13757-4 standard and Beyond the radio devices, the appropriate
the system requirements when using the firm’s external crystal must be chosen to meet the S-
ADF7020 transceiver integrated circuit (IC) to and T-mode data rates of 32.768 and 100 kb/s,
design an M-Bus-compatible device. respectively. The ETSI emissions mask also must
Wireless M-Bus specifies three modes of oper-r be considered, as M-Bus specifies frequency-shift-
ation—all of which use subbands G1 and G2 in keying (FSK) modulation instead of Gaussian FSK
the ETSI 868.0-to-870.0-MHz general usage or raised cosine FSK. In doing so, it makes the
band. Stationary mode (Mode S) is intended for ETSI modulation-bandwidth requirement more
communications between stationary or mobile difficult to meet. That modulation bandwidth can
devices, where the data is transmitted only sev- be simulated, however, using the free ADI SDR
eral times a day. In contrast, frequent transmit Design Studio tool. The note also delves into fre-
mode (Mode T) sends out data in chirps every quency and chip-rate tolerance, receiver sensitivity
few seconds. Frequent receive mode (Mode R) requirements, and deviation tolerance.
wakes up frequently to listen for messages from
a mobile transceiver. Compared to Mode T, for Analog Devices, Inc., 3 Technology
T W Norwood,
Way,
example, this is typically a higher-power mode MA 02062; (781) 329-4700, FAX: (781) 461-3113,
because the receiver must be on for a longer Internet: www.analog.com.

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r Engine
CoverStory
USB TESTING
USB Devices Simplify

y
RF/Microwave Testing
A growing number of RF test functions, including signal generation and
control, power measurements, and signal switching, are now available
by plugging a USB device into a personal computer.
JACK BROWNE / Technical Director
C
omputer-controlled test equip- switches. In the simplest configuration, of personal computers. The standard
ment once evoked images of several signal sources can be controlled was developed by leading computing
racks of instruments con- by a computer running a simple graphi- companies, including Compaq, Digi-
nected to a “technical” com- cal user interface (GUI) program to tal Equipment Corp., IBM, Intel, and
puter via the general-purpose perform multitone testing. In more Microsoft. The USB 2.0 standard was
interface bus (GPIB). While elaborate setups, digital attenuators reached toward the end of 2001 with a
GPIB-controlled gear is still a staple can be combined with frequency syn- data rate of 480 MB/s, with additional
of many automatic-test-equipment thesizers, a switch, and a power meter companies, such as Hewlett-Packard
(ATE) applications, newer test inter- to provide high-speed pulsed testing and NEC, lending support to the new
faces, such as the Universal Serial Bus with precise automatic-level-control standard. The USB 3.0 standard, which
(USB), are quickly gaining ground for (ALC) capability. is being implemented in some early
their ease of use and flexibility. In fact, All of the firm’s instruments fit the products with estimated transfer rates
the availability of a growing number familiar form of a USB “dongle,” and of about 1000 MB/s, will be backward
of measurement functions under USB all are compatible with the USB 2.0 compatible with USB 2.0. In a USB
computer control is making the true standard (Fig. 1). USB was originally system, multiple devices are connected
desktop AE system under laptop control introduced in 1996 as version 1.0, through hubs, with one hub serving as
a reality. Telemakus (www.telemakus. with a data transfer rate of 12 MB/s, the main or root hub. As many as 127
com) is one of several companies now as a single solution to the multitude USB devices, including hub devices, can
offering high-frequency measurement of connectors then in use at the back be connected to a single controller.
functions through 6 GHz that Telemakus offers several
take advantage of a laptop building blocks for a rudi-
or personal computer (PC) mentary USB ATE system. For
for its processing and display example, the company’s model
capabilities. TEA4000-7 digital attenuator
The company is typical provides a total attenuation
of the relatively small firms range of 0 to 31.75 dB, con-
involved in USB test equip- trollable with 7-b, 0.25-dB
ment development. It cur- resolution over a frequency
rently offers several flavors of range of 50 MHz to 4 GHz.
microwave power meters with In addition to the selected
sensors, synthesized signal gen- attenuation, the device does
erators, digital attenuators, suffer some signal attenuation,
and two RF/microwave single- 1. This array of USB RF/microwave test instruments includes power with maximum rated insertion
pole, double-throw (SPDT) meters, signal generators, a digital attenuator, and two SPDT switches. loss of 2.4 dB. The digital step

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operates in the absorptive
b ti mode
d ( good d output
t t VSWR in i off
ff state
t t )). F
From to 44 dB @ 6 GHz
0.3 MHz to 500 MHz in the non absorptive mode ( Output ports reflective in U Low Insertion Loss: 1.2 dB
off state ). The CSWA2-63DR+ at only 4 x 4 x 1.2 mm handles tight spaces; UÊHigh IP3: +45 dBm
provide protection against high moisture environments, and offers outstanding
performance. For tough RF/microwave switch requirements in commercial, UÊIntegral CMOS Driver
industrial, or military applications, think Mini-Circuits’ new ceramic switch. Visit U Supply current of only 18 micro amps
our website to view comprehensive performance data, performance curves, UÊ23 ns typical rise/fall time
data sheets, pcb layout, and environmental specifications. And, you can even
order direct from our web store and have it in your hands as early as tomorrow! U Operating temperature -55° to +125°C
Mini-Circuits...Your partners for success since 1969 4 mm Square
q Package
RoHs
H
compliant

r Engine
Cover Story
USB TESTING
TEG2700-4 (1800 to 2700 MHz). Each

is stabilized by its own internal 10-MHz
crystal reference oscillator and can tune
with 1-kHz resolution, although the tun-
2. The model TED6000-50 power meter/ ing step size can be programmed with
sensor operates from 50 MHz to 6 GHz. standard steps of 1 MHz, 100 kHz, 10
kHz, and 1 kHz, or custom steps from
attenuator can handle average input 1 kHz to full range. The GUI (Fig. 4)
power levels to +23 dBm and peak input supports the control of multiple signal
power levels to +30 dBm, and delivers a generators for multitone testing.
third-order intercept point of +59 dBm. 3. This laptop screen shows how GUIs can be The lower-frequency synthesizer
It draws 150 mA at +5 VDC (from a USB combined to link measurement functions. delivers +10-dBm minimum output
port) and is equipped with SMA male power while the higher-frequency source
and female connectors. The USB 2.0 plies the model TED10200-45 with generates at least +6 dBm output power
interface is by means of a Mini A USB frequency range of 9.3 to 10.2 GHz and typically +10 dBm output power.
connector. When combined with one and the model TED14500-45, which The spurious levels for both sources are
of the company’s power meter/sensor operates from 14.0 to 14.5 GHz. Both typically -80 dBc, with second harmonics
units, it can form a simple USB-con- of these higher-frequency power meter/ of typically -20 dBc, and third harmonics
trolled ALC or automatic-gain-control sensor devices are rated for input power of typically -15 dBc. The single-sideband
(AGC) loop. The attenuator is supplied levels to +15 dBm with ±0.5 dB power (SSB) phase noise is typically -105 dBc/
with simple-to-use GUI software as measurement accuracy. Hz offset 100 kHz from the carrier.
well as software drivers for integration All three of the USB power meters are The company offers two USB-con-
into ATE programs, such as LabView. calibrated versus frequency and power trolled SPDT switches, model TES6000-
The USB attenuator contains 0.5 GB at the factory, with calibration factors 30 and TES3000-60, for applications
Flash memory for documentation or loaded into each device’s 0.5-GB of Flash from 100 MHz to 6 GHz. The reflec-
test data. memory; no zeroing or further calibra- tive TES6000-30 switch features 30
As for power measurement equip- tion is required. When a higher level of dB isolation at 4 GHz and less than 2
ment compatible with the frequency accuracy (than standard) is required, dB insertion loss. The return loss is 20
range of the digital attenuator, the the devices can be loaded at the factory dB at 4 GHz. It hits 1-dB compression
company’s model TED6000-50 power with custom calibration tables. Tem- with +33 dBm input power (it is rated
meter/sensor is a true root-mean-square perature correction is achieved by using for maximum input power of +29 dBm
(RMS) power meter in the size of a an internal temperature sensor. As with when switching), and has a third-order
USB memory device (Fig. 2). It covers a the digital attenuator, the power meter/ intercept point of +49 dBm at 6 GHz. It
frequency range of 50 MHz to 6 GHz sensor units can be controlled by means achieves a 10-to-90-percent RF switch-
with a 50-dB dynamic power measure- of built-in drivers or with a free utility ing time of 33 ns and draws 150 mA
ment range, from -40 to +10 dBm. It software program running on any laptop at +5 VDC. Fully terminated model
promises ±0.5 dB power measurement or PC with Windows XP or Windows TES3000-60 provides 60-dB isolation
accuracy and, like the digital attenua- Vista operating system (Fig. 3). at 1 GHz with less than 1 dB loss.
tor, draws 150 mA at +5 VDC from a For generating test signals, the firm The TES6000-30 is supplied with an
USB port. For power measurements at currently offers two options: models SMA male RF common connector and
higher frequencies, the firm also sup- TEG1000-10 (700 to 1000 MHz) and SMA female connectors on the RF1 and
RF 2 ports. It has a menu-selectable pulse
TES6000-30 function that switches it at a constant
pulse width of 10 microseconds and
repetition rate of 1 kHz (Fig. 5). Together,
the USB instruments form a starting
RF1 RF2 point for a complete USB measurement
T
Termination Pulse output setup. Telemakus LLC, 13405 Folsom
Blvd., Suite 502, Folsom, CA 95630;
RFC
(916) 458-6346, FAX: (916) 983-8713,
RF source e-mail: [email protected], Internet:
www.telemakus.com. For sales inquiries,
4. The easy-to-use GUI software allows 5. The TES6000-30 offers a pulse function contact the distributor RFMW Ltd., at
operation by means of numeric data entry or for switching at a constant pulse width of 10 (877) 367-7369, Internet: www.rfmw.
manipulation of on-screen slider controls. microseconds and repetition rate of 1 kHz. com.telemakus.

I E E E M T T - S M AY 2 3 - 2 8 , 2 0 1 0 A N A H E I M , C A L I F O R N I A
Keynote Speaker
at IMS2010
Come visit C a l i f ornia
im,
Anahe for IMS2010
2010 IEEE International Microwave Symposium is proud to announce this
year’s keynote speaker, The Honorable Zachary J. Lemnios. Mr. Lemnios currently
serves as the Chief Technology Officer (CTO) for the Department of Defense. Prior
to acceptance of his current role, Mr. Lemnios has held many key and influential
positions which have helped advance technology. His remarkable career
includes positions, within MIT Lincoln Laboratory, eventually serving as CTO.
His responsibilities in this role called for strategically coordinating technology
and growth to support current and future laboratory missions. Mr. Lemnios was
. Lemnios
Zachary J also the Director of the Defense Advanced Research Projects Agency (DARPA)
Honorable
Microsystems Technology Office (MTO) as well as the Deputy Director of
Information Processing Technology Office (IPTO).
Mr. Lemnios has served on numerous DoD, industry and academic committees.
Mr. Lemnios has authored over 40 papers, holds 4 patents in advanced GaAs
device and MMIC technology and is a Senior Member of the IEEE.
We encourage your participation in joining us during this exciting Plenary
Session to be held May 25th, 2010. Due to Mr. Lemnios’ busy work schedule, this
is a rare opportunity you will not want to miss! To learn more about Mr. Lemnios
and his upcoming discussion, please visit our website at www.ims2010.org.
We l
ook fo
r w a rd
to yo u r v
i s i t . To s e e w
hat is new at IMS2010,
v i s i t w w w. I M S 2 0 1 0 . o r g .
Official Media Source

Media Partners: of the MTT Society: May 23-28, 2010
IMS2010 I Anaheim Convention Center
S E M I C O N D U C TO R PAC K AG I N G
ProductTechnology
Industry Insight
Properly Packaging
RF Semiconductors
Although often overlooked, the package is an inseparable
part of an RF/microwave semiconductor device, contributing
to electrical performance and long-term reliability.
on thermoset epoxy. For RF and This digital attenuator is typical of a single-

microwave devices, packages function component housed in a sur-
Technical Director
based on metal and ceramic face-mount QFN package measur-
materials are more common, ing just 3 x 3 mm. [Photo courtesy
E
lectronic packaging usually especially where hermetic- of Peregrine Semiconductor (www.
serves to protect what lies ity is important. For less critical peregrine-semi.com)].
within. For RF and micro- applications, plastic drop-in (leaded)
wave devices, however, an or surface-mount (leadless) packages are system-on-a-chip (SoC) packaging and
ideal package must provide increasingly used through microwave system-in-a-package (SiP) approaches.
a physical barrier while frequencies. The SoC approach supports high levels
appearing electrically invisible. And Single-function devices can often of integration by combining RF, analog,
with the trend for increasing levels be supplied in small-outline-transistor and digital functions onto a single IC
of integration at higher frequencies (SOT) or small-out-line-IC (SOIC) plas- substrate and mounting the die into a
(see p. 33), packages must often take tic packages or surface-mount quad- multipin package. The SiP approach
on the electrical characteristics of the flat-no-lead (QFN) plastic packages employs different IC die with bond-wire
circuits they safeguard, even through with dimensions of just a few millime- interconnections within the package.
millimeter-wave frequencies. ters. Last year, Peregrine Semiconductor Each functional portion of a circuit,
Depending upon their circuits, high- (www.peregrine-semi.com) introduced such as baseband and RF, can be opti-
frequency designers have a wide choice a 2-b, 3-GHz digital step attenuator mized by means of a different process.
of package options, from simple SOT based on an advanced silicon CMOS Of course, it adds the expense of fab-
housings to elaborate chip-scale packag- process that fit into a 12-lead 3 x 3 mm ricating different die and of handling
es (CSPs). As with many design options, QFN package (see figure). multiple die and providing additional
a choice in packaging must fulfill a set In some cases, ceramic materi- bond-wire connections.
of requirements that includes electrical als, such as low-temperature cofired Flip-chip mounting is used in cases
performance, cost, size, level of herme- ceramic (LTCC), can support compact where even the small amount of induc-
ticity, and shielding. Low-cost plastic or designs due to the integration of passive tance from bond wire interconnections
epoxy packages may provide a solution circuit elements. By forming circuits cannot be tolerated. Ideal for ball-grid-
for some circuits, such as small-signal and packages from multiple layers of array (BGA) housings, the approach
passive components, but more robust LTCC, passive circuits such as filters typically costs more than methods using
ceramic packages might be needed for can be built into the package. automated bond-wire assembly.
a power transistor expected to deliver For higher levels of packaging inte- At high power levels, the thermal
high output-power levels. In addition to gration, multiple functions must be conductivity of the packaging material
routing signals to and from an integrated either fabricated on a single IC die is critical. The thermal conductivi-
circuit (IC), packages must also provide and housed in a multipin package, or ties of package materials range from
compatibility with other components in several die with multiple functions must about 25 W/mK for alumina (alumi-
a system and support testing. be connected within a common hous- num oxide, Al2O3) to 1800 W/mK for
The lowest-cost housings are based ing. These approaches are known as diamond.

infocenter
Advertiser Website, E-Mail Address Page Advertiser Website, E-Mail Address Page
A Microsemi Corp - Power Products Group.www.microsemi.com. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 77
Advanced Switch Technology . . . . . . . www.astswitch.com, email: [email protected]. . . . . . . . . . . . . 102 Microtool. . . . . . . . . . . . . . . . . . . . . . . . www.microtoolinc.com. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80
Aeroflex / Inmet, Inc. . . . . . . . . . . . . . . www.aeroflex.com/inmet. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 91 Mini Circuits/Sci Components . . . . . . . www.minicircuits.com. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Aeroflex /Metelics. . . . . . . . . . . . . . . . . www.aeroflex.com/metelicsMWRF. . . . . . . . . . . . . . . . . . . . . . . . . . 29 Mini Circuits/Sci Components . . . . . . . www.minicircuits.com. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Agilent Technologies . . . . . . . . . . . . . . www.agilent.com/fi nd/fastCXA . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Mini Circuits/Sci Components . . . . . . . www.minicircuits.com. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
Agilent Technologies . . . . . . . . . . . . . . www.agilent.com/find/LTEtesting. . . . . . . . . . . . . . . . . . . . . . . . . . 81 Mini Circuits/Sci Components . . . . . . . www.minicircuits.com. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
AMTI. . . . . . . . . . . . . . . . . . . . . . . . . . . . www.diplexers.com, email: [email protected]. . . . . . . . . . . . . 76 Mini Circuits/Sci Components . . . . . . . www.minicircuits.com. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
Anatech Electronics Inc. . . . . . . . . . . . . www.anatechelectronics.com, Mini Circuits/Sci Components . . . . . . . www.minicircuits.com. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
email: [email protected]. . . . . . . . . . . . . . . . . . . . . . . . 83 Mini Circuits/Sci Components . . . . . . . www.minicircuits.com. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49
Anritsu Company. . . . . . . . . . . . . . . . . . www.anritsu-newmasters.com/826. . . . . . . . . . . . . . . . . . . . . . COV 2 Mini Circuits/Sci Components . . . . . . . www.minicircuits.com. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53
Applied Computational Sciences. . . . . www.appliedmicrowave.com. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72 Mini Circuits/Sci Components . . . . . . . www.minicircuits.com. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55
Applied Interconnect. . . . . . . . . . . . . . www.onlinecables.com , email: [email protected] . . . . . . 104 Mini Circuits/Sci Components . . . . . . . www.minicircuits.com. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 59
Applied Radar, Inc. . . . . . . . . . . . . . . . . www.appliedradar.com, Mini Circuits/Sci Components . . . . . . . www.minicircuits.com. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 79
email: [email protected]. . . . . . . . . . . . 102 Mini Circuits/Sci Components . . . . . . . www.minicircuits.com. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 93
AR Worldwide-Modular RF. . . . . . . . . . www.ar-worldwide.com. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 Mini Circuits/Sci Components . . . . . . . www.minicircuits.com. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 95
ARRA, INC. . . . . . . . . . . . . . . . . . . . . . . . www.arra.com, email: [email protected]. . . . . . . . . . . . . . . . . . . . COV 3 Mini Circuits/Sci Components . . . . . . . www.minicircuits.com. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 101
Avtech Electrosystems Inc. . . . . . . . . . www.avtechpulse.com, email: [email protected]. . . . . . . . . 102 Mini Circuits/Sci Components . . . . . . . www.minicircuits.com. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14-15
AWR . . . . . . . . . . . . . . . . . . . . . . . . . . . . www.awrcorp.com/mwo. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Mini Circuits/Sci Components . . . . . . . www.minicircuits.com. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30-31
B MITEQ. . . . . . . . . . . . . . . . . . . . . . . . . . . www.miteq.com, email: [email protected]. . . . . . . . . . . . . . 1
Bowei Integrated Circuits, Inc. . . . . . . www.cn-bowei.com, email: [email protected]. . . . . . . . . . . . . . 18 MITEQ. . . . . . . . . . . . . . . . . . . . . . . . . . . www.miteq.com, email: [email protected]. . . . . . . . . . . . . 11
C MITEQ. . . . . . . . . . . . . . . . . . . . . . . . . . . www.miteq.com, email: [email protected]. . . . . . . . . . . . . 47
Channel Microwave Corporation. . . . . www.channelmicrowave.com, Modco. . . . . . . . . . . . . . . . . . . . . . . . . . . www.modcoinc.com . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 104
email: [email protected]. . . . . . . . . . . . . . . . . . . . . . . . 17 MP Associates . . . . . . . . . . . . . . . . . . . . www.ims2010.org. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 97
CIAO Wireless, Inc . . . . . . . . . . . . . . . . . www.ciaowireless.com, email: [email protected] . . . . . . . . . 8 N
Coilcraft . . . . . . . . . . . . . . . . . . . . . . . . . www.coilcraft.com, email: [email protected] . . . . . . . . . . . . . . . . 10 Narda An L-3 Communications . . . . . . www.nardamicrowave.com, email: [email protected] . . . . . 3
Communication Concepts, Inc. . . . . . . www.communication-concepts.com, Narda An L-3 Communications . . . . . . www.nardamicrowave.com, email: [email protected] . . . . 88
email: [email protected]. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90 National Instruments. . . . . . . . . . . . . . www.ni.com/streaming/rf. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75
D Noisecom. . . . . . . . . . . . . . . . . . . . . . . . www.noisecom.com . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . COV 4
Daico Industries. . . . . . . . . . . . . . . . . . . www.daico.com . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Nuhertz Technologies. . . . . . . . . . . . . . www.filter-solutions.com. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80
dBm, LLC. . . . . . . . . . . . . . . . . . . . . . . . . www.dbmcorp.com. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 P
Digi-Key. . . . . . . . . . . . . . . . . . . . . . . . . www.digikey.com. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Phase Matrix. . . . . . . . . . . . . . . . . . . . . www.phasematrix.com, email: [email protected]. . . . . . . . 45
E Phonon Corporation. . . . . . . . . . . . . . . www.phonon.com. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90
EM Research. . . . . . . . . . . . . . . . . . . . . . www.emresearch.com, email: [email protected] . . . . . . . . . 40 Photofabrication Engineering Inc.. . . www.photofabrication.com. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 103
EMI Filter Company. . . . . . . . . . . . . . . . www.emifiltercompany.com, Polyfet RF Devices. . . . . . . . . . . . . . . . . www.polyfet.com, email: [email protected] . . . . . . . . . . . . . . 102
email: [email protected]. . . . . . . . . . . . . . . . . . . . . . . . 78 Pulsar Microwave Corp. . . . . . . . . . . . . www.pulsarmicrowave.com,
ET Industries Inc . . . . . . . . . . . . . . . . . . www.etiworld.com, email: [email protected]. . . . . . . . . . . . . . . 78 email: [email protected]. . . . . . . . . . . . . . . . . . . . . . . . . 13
H R
Harting North America. . . . . . . . . . . . . www.harting-usa.com, www.fci.com. . . . . . . . . . . . . . . . . . . . . . . . 66 RF Bay. . . . . . . . . . . . . . . . . . . . . . . . . . . www.rfbayinc.com, email: [email protected]. . . . . . . . . . . . . . 102
Herotek Inc. . . . . . . . . . . . . . . . . . . . . . . www.herotek.com, email: [email protected]. . . . . . . . . . . . . . . . 52 RF Depot. . . . . . . . . . . . . . . . . . . . . . . . . www.rfdepot.com. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 87
Hittite Microwave Corporation. . . . . . www.hittite.com . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 67 RFMD . . . . . . . . . . . . . . . . . . . . . . . . . . . www.rfmd.com . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Hittite Microwave Corporation. . . . . . www.hittite.com . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 69 RFMW Ltd. . . . . . . . . . . . . . . . . . . . . . . . www.rfmw.com. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Hittite Microwave Corporation. . . . . . www.hittite.com . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 71 RLC Electronics. . . . . . . . . . . . . . . . . . . . www.rlcelectronics.com . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
I S
Intercept Technology. . . . . . . . . . . . . . www.intercept.com. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61 Sector Microwaves Inc Inc . . . . . . . . . . www.sectormicrowave.com. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 103
K Skyworks Solutions, Inc. . . . . . . . . . . . www.skyworksinc.com. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
KR Electronics . . . . . . . . . . . . . . . . . . . . www.krfilters.com, email: [email protected]. . . . . . . . . . . . . . . 102 Spectrum Electrotechnik. . . . . . . . . . . www.spectrum-et.com, email: [email protected]. . . . . . . . 51
Krytar, Inc. . . . . . . . . . . . . . . . . . . . . . . . www.krytar.com, email: [email protected] . . . . . . . . . . . . . . . . . . . 46 Synergy Microwave. . . . . . . . . . . . . . . . www.synergymwave.com, email: [email protected] . . . 73
KS Electronics. . . . . . . . . . . . . . . . . . . . . www.kselectronics.com. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 103 Synergy Microwave. . . . . . . . . . . . . . . . www.synergymwave.com, email: [email protected] . . . 85
Synergy Microwave. . . . . . . . . . . . . . . . www.synergymwave.com, email: [email protected] . . . 89
L
Lansdale Semiconductor, Inc. . . . . . . . www.lansdale.com, email: [email protected]. . . . . . . . . . . . . . . 25 T
Linear Technology Corporation. . . . . . www.linear.com/5538. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56 TTE Incorporated. . . . . . . . . . . . . . . . . . www.tte.com . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 68
Linx Technologies. . . . . . . . . . . . . . . . . www.linxtechnologies.com . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 V
Linx Technologies. . . . . . . . . . . . . . . . . www.linxtechnologies.com . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 103 VMR Electronics LLC . . . . . . . . . . . . . . . www.vmrelectronics.com, email: [email protected]. . . . . 2
M W
M/A-COM Technology Solutions, Inc.. www.macomtech.com. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 63 Waveline Inc. . . . . . . . . . . . . . . . . . . . . www.wavelineinc.com . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50
Maury Microwave, Inc. . . . . . . . . . . . . . www.maurymw.com, email: [email protected]. . . . . . . . . . 20 Wenteq Microwave Corporation. . . . . www.wenteq.com, email: [email protected] . . . . . . . . . . . . . . . 102
Meca Electronics, Inc. . . . . . . . . . . . . . . www.e-meca.com, email: [email protected]. . . . . . . . . . . . . . . . . . 7 Wilmanco. . . . . . . . . . . . . . . . . . . . . . . . www.wilmanco.com, email: [email protected]. . . . . . . . . 103
Micro Lambda Wireless, Inc. . . . . . . . . www.microlambdawireless.com,
email: [email protected]. . . . . . . . . . . . . . . . . . . . . . 32 *Domestic Edition only **International Edition only This index is provided as an additional service by the publisher,
Microhard Systems, Inc. . . . . . . . . . . . . www.microhardcorp.com. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 86 who assumes no responsibility for errors or omissions.
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february 2010 n Microwaves & RF 99
002MRF_Info Center.indd 99 2/9/10 4:37:25 PM

RFIC AMPLIFIERS
ProductTechnology
Product Trends
RFIC Amps Add

Gain Where Needed
A range of narrowband and broadband gain blocks, low-noise
amplifiers, and power amplifier is available in chip and package
forms from RF through millimeter-wave bands.
In comparison, the same company than 3-percent error-vector-magnitude

Technical Director offers the model TGA2507-SM three- (EVM) performance.
stage driver amplifier for 11 to 17 GHz, The SKY65038-70LF is an LNA
housed in a surface-mount package from Skyworks Solutions (www.sky-
A
mplifiers, whether as RF measuring 4.0 x 4.0 x 0.9 mm. Based worksinc.com) suitable for use from 0.5
gain blocks, as low-noise on GaAs pseudomorphic high electron to 6.0 GHz. Based on GaAs PHEMT
amplifiers (LNAs), or mobility transistor (HEMT) technology, technology, it offers15 dB gain and 2 dB
power amplifiers (PAs), are the Ku-band RFIC amplifier delivers noise figure at 1 GHz from a +5-VDC
essential building blocks in 25-dB small-signal gain with +17-dBm supply. It is supplied in a 4-pin SOT-89
microwave systems. Over output power at 1-dB compression. plastic package.
the last decade, a growing number of RF In terms of bandwidth, the model The ERA-1+ RFIC amplifier from
integrated circuit (RFIC) amplifiers have SDA-6000 from RF Micro Devices Mini-Circuits (www.minicircuits.com)
become available in place of larger and (www.rfmd.com) is a GaAs PHEMT is a DC-to-8-GHz amplifier supplied
more expensive discrete designs. While amplifier with DC to 50 GHz band- in a drop-in, plastic micro-X package.
these RFIC products can’t always match width. It provides 8.5 dB typical gain Based on InGaP HBT technology, it is
the pure performance of a discrete- with 4.3 dB typical noise figure with unconditionally stable and internally
device amplifier, RFICs provide the +14-dBm output power at 1-dB com- matched to 50 Ohms. It yields 11.8 dB
convenience of small size and, often, pression at mid-band frequencies. The typical gain at 2 GHz with 4.3 dB typical
ease of installation in a system. midband noise figure is 4.3 dB. noise figure and +12 dBm typical output
Many RFIC amplifiers are available At lower frequencies, the model power at 1-dB compression.
in chip form or supplied in drop-in or ABA-31563 from Avago Technologies The CMM1100-QF LNA from
surface-mount packages, providing (www.avagotech.com) is a silicon bipo- Mimix Broadband (www.mimixbroad-
users with several mounting options. lar RFIC gain block amplifier supplied band.com) operates from 2 to 18 GHz
For example, the model TGA1342-SCC in a plastic SOT-363 surface-mount in a 4 x 4 mm QFN surface-mount
from TriQuint Semiconductor (www. package for use from DC to 3.5 GHz. package. It delivers 15 dB small signal
triquint.com) is an automatic-gain- It provides nominal gain of 21.9 dB at gain and 3.8 dB noise figure across most
control (AGC) amplifier based on GaAs 2 GHz with output power of +2 dBm. of its operating band, with +15 dBm
MESFET technology. It operates from Another InGaP HBT RFIC amplifier, output power at 1-dB compression. It
2 to 20 GHz and consists of nine field- the model AP3013 from RFIC Tech- is designed for 100 mA at +5 VDC.
effect transistors with typical midband nology Corp. (www.rfintc.com), with This is just a sampling of narrow-
noise figure of 3.5 dB and nominal gain a frequency range of 1.9 to 2.7 GHz, band and broadband RFIC amplifiers
of 9 dB on a chip measuring 3.4 x 2.0 x is ideal for WiMAX and other wire- available in both chip and packaged
0.1 mm. The IC amplifier draws 60 mA less communications applications. It is forms based on a variety of different
current from a +5 to +8 VDC supply designed for use with a single +3.3-VDC high-frequency transistor technologies.
and delivers +17.5 dBm output power supply and provides 34 dB power gain For more on the technologies, see the
at 1-dB compression. with +24 dBm output power at less “RF Primer” on p. 38.

as low as ea.(qty.
e ( 30)
ERA-SM
DC-8 GHz
PHA
Gali/GVA
DC-8 GHz
LEE
DC-10 GHz
Gain up
p to 26 dB,, Output
p power up
p to 22 dBm,, High
g IP3 up
p to 42 dBm
MMIC amplifiers with just the right performance and Available in three packages;
size to fit your design, Mini-Circuits skinny Sigma LEE, Leadless 3x3 mm Low Profile package
Gali, ERA-SM and our new fixed voltage GVA and PHA. SOT-89 for superior grounding and heat dissipation
All MMIC’s are transient protected against DC Plastic Micro-XX with surface mount leads, for easy
current surges and are available in a variety of configuration and assembly.
over 50 models.These affordable compact amplifiers Complete performance specs, data and a wide
have low thermal resistance for high reliability. selection of Amplifier Designer’s Kits geared for you
ur
All models protected under U.S. patent # 6,943,629. RoHS compliant. development needs are available on our web site.

r Engine
IF/RF MICROWAVE COMPONENTS 376 rev K
MICROWAVES
MICROWAVES&&RF
RFDIRECT
DIRECTCONNECTION
CONNECTIONADS
ADS
TTO
O AD
DVV E R TI SSE
E I N THI S S ECTI ON, C ALL JOANNE REPPAS (201) 666-6698
RF Amplifiers, Isolators and
Circulators from 20MHz to 26.5GHz
Super Low Noise RF

Amplifiers
Broadband low noise
amplifiers
Input PIN diode
Protected low noise
amplifiers
General Purpose
Gain Block Amplifiers
High power RF amplifiers and broadband power
amplifiers
RF isolators and
circulators
High power coaxial
and waveguide
terminations
High power coaxial
attenuators
Wenteq Microwave Corporation

735 West Duarte Road, Suite 401, Arcadia, CA 91007
Phone: (626) 821-9118, Fax: (626) 602-3101
Email: [email protected], Website: www.wenteq.com
Wenteq Microwave Corp. Advanced Switch Technology
RF Bay, Inc.
10GHz Divide-by 13 Prescaler 850-950MHz 10W Power Amplifier 100KHz - 10GHz RF Amplifier
s,OW.OISE!MPLIlER s6OLTAGE#ONTROL/SCILLATOR
s0OWER!MPLIlER s0HASE,OCKED/SCILLATOR
s&REQUENCY$IVIDER s5P$OWN#ONVERTER
s&REQUENCY$OUBLER s2&0OWER$ETECTOR
s&REQUENCY-IXER s2&3WITCHES
RF Bay,
y, Inc.
15825 Shady Grove Road, Suite 190, Rockville, MD 20850
Tel: (301) 880-0921, Fax: (301) 560-8007, Mobile: (240) 645-8591
Email: [email protected], Website: www.rfbayinc.com
KR Elecontronics, Inc. RF Bay, Inc.
Polyfet RF Devices

New Product Release

50Vdc LDMOS Devices

Fast Pulse Test Solutions
Avtech offers over 500 standard models of high-speed pulse generators, function generators, and ampli-
LK141: 60W, 1GHz, 10dB fiers ideal for both R&D and automated factory-floor testing. Some of our standard models include:
60W, 500MHz, 16dB AVR-EB4-B: +2A / -4A pulser for diode reverse-recovery timee tests
LK142: 120W, 500MHz, 16dB AV-156F-B: +10 Amp constant current pulser for airbag initiatorr tests.
AVO-9A-B: 200 mA, 200 ps rise time driver for pulsed laser diodee tests.
LR941: 200W, 500MHz, 13dB AV-151J-B: ±400 V, 50 kHz function generator for piezoelectricc tests.
400W, 230MHz, 15dB AVOZ-D2-B: 700 V, 70 A pulser for production testing of attenuators.
AVR-DV1-B: 1000 V, variable rise-time pulser for phototriac dV/dtt tests.
LY942: 600W, 88MHz, 19dB
Suitable for broad band and narrow Typical Output Waveform
T
band applications. Usable operating 2 A/div, 40 ns/div
across 24-50Vdc. Sample units now

available. Please contact us for
AVR-DC1-B Reverse Recovery Test System
additional details.
[email protected] PO Box 265 Tel: 888-670-8729 [email protected]
Ogdensburg, NY 13669 Fax: 800-561-1970 www.avtechpulse.com
805-484-4210
Polyfet RF Avtech Electrosystems Ltd.

MICROWAVES & RF DIRECT CONNECTION ADS
TO A D V E R TI S E I N THI S S ECTI ON, C ALL JOANNE REPPAS (201) 666-6698
Wil
Wilmanco Sector Microwave Industries, Inc.
Photofabrication
Applied Radar, Inc.

www.appliedradar.com
Antenna Testing
Quick Turnaround
For more info email
[email protected]
Linx Technologies Applied Radar, Inc. KS Electronics

MICROWAVES & RF CLASSIFIED ADS
TO ADVERTISE, CALL JOANNE REPPAS
editor’s choice
(201) 666-6698
Handheld VNA Lowers Drift Errors

With 0.01 dB/°C Stability
FIELD ENGINEERS who characterize or trouble-
shoot RF components for mission-critical com-
munication systems have a new option in the
N9923A FieldFox RF vector network analyzer
(VNA). At 6.2 lbs., this full two-port VNA pro-
vides measurement stability of 0.01 dB/°C. It
spans 2 to 4 or 6 GHz. The N9923A offers more
than 42 dB directivity with a typical dynamic
range of 100 dB. The VNA provides 0.01 dBm
RMS trace noise. It allows operators to simulta-
neously measure and display all four S-param-
eters in multiple formats including Smith chart,
polar, and group delay. The instrument performs
Applied Interconnect both cable and antenna test (distance to fault, return loss, and VSWR)
and can serve as a vector voltmeter (1 and 2 channel). With a USB power
sensor, the FieldFox analyzer can make power-meter measurements to 24
GHz. Its integrated QuickCal calibration capability enables consistent
measurement results while eliminating the need to carry a calibration kit
into the field. The FieldFox RF VNA, which includes no fans or vents,
meets and exceeds MIL PRF 28800F Class 2 compliance. P&A: available
for order now; starting at $12,000.
Agilent Technologies, Inc., 5301 Stevens Creek Blvd., Santa Clara, CA 95051; (408) 345-8886,
FAX: (408) 345-8474, Internet: www.agilent.com.
13.5-GHz SPDT Switch Boosts Test Performance

THE PE42556 SINGLE-POLE DOUBLE-THROW (SPDT) RF switch
vows to augment test-equipment performance while
New Modco MCR enabling the reliable testing of next-generation RF
ICs. The absorptive switch, which is
Series Ceramic designed on the proprietary Ultra-
Resonator VCO CMOS silicon-on-sapphire process
technology, spans 9 kHz to 13.5 GHz
These Voltage Controlled Os- with low 1.7-dB insertion loss at 13.5
GHz and typical return loss of 13 dB
cillators offer exceptionally low at that frequency. It also guarantees
Phase Noise in the industry fast switch-settling time of typically
Standard one half inch square 3.3 microseconds from a 50-percent
control signal to 10 or 90 percent of a
package. Model MCR1270-
final RF value. The PE42556 terminates
1290MC with an Input Voltage the unused port to 50 Ω. It delivers 26
of +5.0V, Tuning Voltage of dB isolation at 13.5 GHz and +56 dBm input third-order-intercept-point
0.5V to 4.5V and a Frequency performance. The switch, which is supplied in a flip-chip package, boasts
4.0 kV HBM electro-static-discharge (ESD) tolerance on all ports. It inte-
Range of 1270-1290MHz is grates CMOS control logic, which is driven by a single-pin, low-voltage
rated -122dBc @ 10khz offset. CMOS control input with a user-defined logic table. In addition, a
Many other catalog models are logic-select pin allows polarity to be inverted for back-to-back switching
available and custom designs applications. P&A: $15.00 each in 5000-unit volumes; shipping to lead
customers now.
can be supplied with no NRE.
Peregrine Semiconductor Corp., 9380 Carroll Park Dr., San Diego, CA 92121; (858) 731-9400,
www.modcoinc.com Internet: www.psemi.com.
Modco, Inc.

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