PD -91584A

IRG4PC40KD
INSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit Rated
ULTRAFAST SOFT RECOVERY DIODE UltraFast IGBT
Features C

• Short Circuit Rated UltraFast: Optimized for VCES = 600V

high operating frequencies >5.0 kHz , and Short
Circuit Rated to 10µs @ 125°C, VGE = 15V
• Generation 4 IGBT design provides tighter VCE(on) typ. = 2.1V
parameter distribution and higher efficiency than G
Generation 3 @VGE = 15V, IC = 25A
• IGBT co-packaged with HEXFREDTM ultrafast, E
ultra-soft-recovery anti-parallel diodes for use in n-ch an nel
bridge configurations
• Industry standard TO-247AC package
Benefits
• Generation 4 IGBTs offer highest efficiencies
available
• HEXFRED diodes optimized for performance with
IGBTs. Minimized recovery characteristics require
less/no snubbing
• Designed to be a "drop-in" replacement for
equivalent industry-standard Generation 3 IR IGBTs
TO-247AC
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
IC @ TC = 25°C Continuous Collector Current 42
IC @ TC = 100°C Continuous Collector Current 25
ICM Pulsed Collector Current Q 84 A
ILM Clamped Inductive Load Current R 84
IF @ TC = 100°C Diode Continuous Forward Current 15
IFM Diode Maximum Forward Current 84
tsc Short Circuit Withstand Time 10 µs
VGE Gate-to-Emitter Voltage ± 20 V
PD @ TC = 25°C Maximum Power Dissipation 160
W
PD @ TC = 100°C Maximum Power Dissipation 65
TJ Operating Junction and -55 to +150
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw. 10 lbf•in (1.1 N•m)

Thermal Resistance
Parameter Min. Typ. Max. Units
RθJC Junction-to-Case - IGBT ––– ––– 0.77
RθJC Junction-to-Case - Diode ––– ––– 1.7 °C/W
RθCS Case-to-Sink, flat, greased surface ––– 0.24 –––
RθJA Junction-to-Ambient, typical socket mount ––– ––– 40
Wt Weight ––– 6 (0.21) ––– g (oz)
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Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitter Breakdown VoltageS 600 — — V VGE = 0V, IC = 250µA
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — 0.46 — V/°C VGE = 0V, IC = 1.0mA
VCE(on) Collector-to-Emitter Saturation Voltage — 2.10 2.6 IC = 25A VGE = 15V
— 2.70 — V IC = 42A See Fig. 2, 5
— 2.14 — IC = 25A, TJ = 150°C
VGE(th) Gate Threshold Voltage 3.0 — 6.0 VCE = VGE, IC = 250µA
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage — -13 — mV/°C VCE = VGE, IC = 250µA
gfe Forward Transconductance T 7.0 14 — S VCE = 100V, IC = 25A
ICES Zero Gate Voltage Collector Current — — 250 µA VGE = 0V, VCE = 600V
— — 3500 VGE = 0V, VCE = 600V, TJ = 150°C
VFM Diode Forward Voltage Drop — 1.3 1.7 V IC = 15A See Fig. 13
— 1.2 1.6 IC = 15A, TJ = 150°C
IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions
Qg Total Gate Charge (turn-on) — 120 180 IC = 25A
Qge Gate - Emitter Charge (turn-on) — 16 24 nC VCC = 400V See Fig.8
Qgc Gate - Collector Charge (turn-on) — 51 77 VGE = 15V
td(on) Turn-On Delay Time — 53 —
tr Rise Time — 33 — TJ = 25°C
ns
td(off) Turn-Off Delay Time — 110 160 IC = 25A, VCC = 480V
tf Fall Time — 100 150 VGE = 15V, RG = 10Ω
Eon Turn-On Switching Loss — 0.95 — Energy losses include "tail"
Eoff Turn-Off Switching Loss — 0.76 — mJ See Fig. 9,10,14
Ets Total Switching Loss — 1.71 2.3
tsc Short Circuit Withstand Time 10 — — µs VCC = 360V, TJ = 125°C
VGE = 15V, RG = 10Ω , VCPK < 500V
td(on) Turn-On Delay Time — 52 — TJ = 150°C,
tr Rise Time — 37 — IC = 25A, VCC = 480V
ns
td(off) Turn-Off Delay Time — 220 — VGE = 15V, RG = 10Ω
tf Fall Time — 140 — Energy losses include "tail"
Ets Total Switching Loss — 2.67 — mJ See Fig. 11,14
LE Internal Emitter Inductance — 13 — nH Measured 5mm from package
Cies Input Capacitance — 1600 — VGE = 0V
Coes Output Capacitance — 130 — pF VCC = 30V See Fig. 7
Cres Reverse Transfer Capacitance — 55 — ƒ = 1.0MHz
trr Diode Reverse Recovery Time — 42 60 ns TJ = 25°C See Fig.
— 74 120 TJ = 125°C 14 IF = 15A
Irr Diode Peak Reverse Recovery Current — 4.0 6.0 A TJ = 25°C See Fig.
— 6.5 10 TJ = 125°C 15 VR = 200V
Qrr Diode Reverse Recovery Charge — 80 180 nC TJ = 25°C See Fig.
— 220 600 TJ = 125°C 16 di/dt = 200Aµs
di(rec)M/dt Diode Peak Rate of Fall of Recovery — 188 — A/µs TJ = 25°C See Fig.
During tb — 160 — TJ = 125°C 17
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 IRG4PC40KD
30

For both:

25 D uty cy cle: 50%

TJ = 125°C
T s ink = 90°C
LOAD CURRENT (A)

G ate drive as specified

20 P ow e r Dis sip ation = 35 W

S q u a re w a v e :

15 6 0% of rate d
volta ge

I
10

Id e a l d io d e s
5

0
0.1 1 10 100
f, Frequency (KHz)

Fig. 1 - Typical Load Current vs. Frequency

(Load Current = IRMS of fundamental)

100 100
I C , Collector-to-Emitter Current (A)
I C , Collector-to-Emitter Current (A)

T J = 150°C
TJ = 150 o C
TJ = 25°C
10 10

TJ = 25 oC

V GE = 15V V C C = 50V
20µs PULSE WIDTH 5µs PULSE WIDTH A
1 1
0.1 1 10 5 7 9 11
VCE , Collector-to-Emitter Voltage (V) VG E , Gate-to-Emitter Voltage (V)

Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics

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IRG4PC40KD
50 5.0
VGE = 15V
80 us PULSE WIDTH

VCE , Collector-to-Emitter Voltage(V)

IC = 50 A
Maximum DC Collector Current(A)

40
4.0

30

3.0

20
IC = 25 A
2.0 IC =12.5 A
10

0 1.0
25 50 75 100 125 150 -60 -40 -20 0 20 40 60 80 100 120 140 160
TC , Case Temperature ( ° C) TJ , Junction Temperature ( ° C)

Fig. 4 - Maximum Collector Current vs. Case Fig. 5 - Typical Collector-to-Emitter Voltage
Temperature vs. Junction Temperature

1
Thermal Response (Z thJC )

D = 0.50

0.20

0.1 0.10

P DM
0.05
t1
0.02 t2
SINGLE PULSE
0.01 (THERMAL RESPONSE)
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = PDM x Z thJC + TC
0.01
0.00001 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)

Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

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 IRG4PC40KD
3000 20
VGE = 0V, f = 1MHz VCC = 400V
Cies = Cge + Cgc , Cce SHORTED
I C = 25A
Cres = Cgc

VGE , Gate-to-Emitter Voltage (V)

2500 Coes = Cce + Cgc
16
C, Capacitance (pF)

2000

Cies 12

1500

8
1000

4
500
Coes
Cres
0 0
1 10 100 0 20 40 60 80 100 120 140
VCE , Collector-to-Emitter Voltage (V) QG , Total Gate Charge (nC)

Fig. 7 - Typical Capacitance vs. Fig. 8 - Typical Gate Charge vs.

Collector-to-Emitter Voltage Gate-to-Emitter Voltage

3.00 100
V CC = 480V RG = 10Ω
Ohm
V GE = 15V VGE = 15V
TJ = 25 ° C VCC = 480V
I C = 25A
Total Switching Losses (mJ)
Total Switching Losses (mJ)

2.50 10
IC = 50 A

IC = 25 A

IC = 12.5 A
2.00 1

1.50 0.1
0 10 20 30 40 50 -60 -40 -20 0 20 40 60 80 100 120 140 160
RG, Gate
RG Resistance ((Ohm)
Gate Resistance Ω) TJ , Junction Temperature ( °C )

Fig. 9 - Typical Switching Losses vs. Gate Fig. 10 - Typical Switching Losses vs.
Resistance Junction Temperature
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IRG4PC40KD
8.0 1000
RG 10Ω
= Ohm VGE = 20V
TJ = 150 °C T J = 125 oC
125°C
VCC = 480V

I C, Collector-to-Emitter Current (A)

VGE = 15V
Total Switching Losses (mJ)

6.0
100

4.0

10

2.0

SAFE OPERATING AREA

0.0 1
0 10 20 30 40 50 1 10 100 1000
I C , Collector-to-emitter Current (A) VCE, Collector-to-Emitter Voltage (V)

Fig. 11 - Typical Switching Losses vs. Fig. 12 - Turn-Off SOA

Collector-to-Emitter Current
100
In s ta n ta n e o u s F o rw a rd C u rre n t - I F (A )

10

TJ = 1 5 0°C

TJ = 1 2 5°C

TJ = 2 5°C

1
0.8 1.2 1.6 2.0 2.4

F o rw a rd V o lta g e D ro p - V FM (V )
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current

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 IRG4PC40KD
100 100

VR = 2 0 0 V VR = 2 0 0 V
T J = 1 2 5 °C T J = 1 2 5 °C
T J = 2 5 °C T J = 2 5 °C

80

I F = 30 A

I IR R M - (A )
t rr - (ns)

I F = 3 0A
I F = 1 5A
60 10
I F = 1 5A

I F = 5 .0 A
40

I F = 5 .0 A

20 1
100 1000 100 1000
d i f /d t - (A /µ s) di f /dt - (A /µs)
Fig. 14 - Typical Reverse Recovery vs. dif/dt Fig. 15 - Typical Recovery Current vs. dif/dt

800 1000

VR = 2 0 0 V VR = 2 0 0 V
T J = 1 2 5 °C T J = 1 2 5 °C
T J = 2 5 °C T J = 2 5 °C

600
d i(re c)M /d t - (A /µs)

I F = 3 0A
Q R R - (nC )

I F = 5 .0A
400
I F = 15 A I F = 1 5A

I F = 5 .0A I F = 30 A

200

0 100
100 1000 100 1000
d i f /d t - (A /µ s) di f /dt - (A /µs)

Fig. 16 - Typical Stored Charge vs. dif/dt Fig. 17 - Typical di(rec)M/dt vs. dif/dt

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IRG4PC40KD

90% Vge
Same ty pe
device as +Vge
D .U.T.

V ce

430µF
80%
of Vce D .U .T. 9 0 % Ic
10% Vce
Ic Ic
5 % Ic

td (o ff) tf

∫
t1 + 5 µ S

Fig. 18a - Test Circuit for Measurement of E o ff = Vce

V c e icIcd tdt
t1
ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf

t1 t2

Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining

Eoff, td(off), tf

∫
trr
G A T E V O L T A G E D .U .T . trr
Ic
Q rr = Ic ddt
id t
tx
1 0 % +V g
+Vg
tx
1 0 % Irr
10% Vcc
V cc
D UT VO LTAG E
Vce
AN D CU RRE NT V pk
Irr
1 0 % Ic
Vcc Ip k
9 0 % Ic
Ic
D IO D E R E C O V E R Y
W A V E FO R M S
5% Vce
td (o n ) tr

∫
t2
Vce
ce ieIcd t dt

∫
E on = V t4
t1 E re c = VVd
d idIc
d t dt
t3
t1 t2 D IO D E R E V E R S E
REC OVERY ENER GY

t3 t4

Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining Eon, td(on), tr Defining Erec, trr, Qrr, Irr

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 IRG4PC40KD

V g G A T E S IG N A L
D E V IC E U N D E R T E S T

C U R R E N T D .U .T .

V O L T A G E IN D .U .T .

C U R R E N T IN D 1

t0 t1 t2

Figure 18e. Macro Waveforms for Figure 18a's Test Circuit

L D.U.T. 480V
RL=
4 X IC @25°C
1000V Vc*
0 - 480V
50V
6000µ F
100 V

Figure 19. Clamped Inductive Load Test Figure 20. Pulsed Collector Current
Circuit Test Circuit

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IRG4PC40KD
Notes:
Q Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature
(figure 20)
R VCC=80%(VCES), VGE=20V, L=10µH, RG= 10Ω (figure 19)
S Pulse width ≤ 80µs; duty factor ≤ 0.1%.
T Pulse width 5.0µs, single shot.

Case Outline — TO-247AC

NOTE S:
3 .6 5 (.1 4 3 ) -D-
5 .3 0 (.2 0 9 ) 1 D IM E N S IO N S & T O LE R A N C IN G
1 5 .9 0 (.6 2 6 ) 3 .5 5 (.1 4 0 ) P E R A N S I Y 14 .5M , 1 98 2 .
1 5 .3 0 (.6 0 2 ) 4 .7 0 (.1 8 5 )
0 .2 5 ( .0 1 0 ) M D B M 2 C O N T R O L L IN G D IM E N S IO N : IN C H .
-B- -A- 2.5 0 ( .0 8 9)
3 D IM E N S IO N S A R E S H O W N
1.5 0 ( .0 5 9) M IL LIM E T E R S (IN C H E S ).
5 .5 0 (.2 17 ) 4 4 C O N F O R M S T O J E D E C O U T L IN E
T O -2 4 7A C .
2 0 .3 0 (.8 0 0 )
1 9 .7 0 (.7 7 5 ) 5.5 0 (.2 1 7)
2X
4.5 0 (.1 7 7) LEAD A S S IG N M E N T S
1- GAT E
1 2 3 2- COLLECTO R
3- E M IT T E R
4- COLLECTO R
-C-
1 4 .8 0 (.5 8 3 ) 4 .3 0 (.1 7 0 )
* 1 4 .2 0 (.5 5 9 ) 3 .7 0 (.1 4 5 ) * LO N G E R LE A D E D (2 0m m )
V E R S IO N A V A IL A B L E (T O -2 47 A D )
T O O R D E R A D D "-E " S U F F IX
TO PAR T NUM BER
2 .4 0 (.0 9 4 ) 1 .4 0 ( .0 56 ) 0 .8 0 (.0 3 1 )
2 .0 0 (.0 7 9 ) 3X 3X
1 .0 0 ( .0 39 ) 0 .4 0 (.0 1 6 )
2X
0.2 5 (.0 1 0 ) M C A S 2 .6 0 ( .1 0 2 )
5 .4 5 (.2 1 5 ) 2 .2 0 ( .0 8 7 )
3 .4 0 (.1 3 3 )
2X 3 .0 0 (.1 1 8 )

CO NF O RM S TO J EDEC O U TL IN E TO -2 47AC (T O -3P)

D im e n s io n s in M illim e te rs a n d (In c h e s )

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
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Data and specifications subject to change without notice. 4/00
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