Bulletin PD-20744 rev.

A 01/01

150EBU04
Ultrafast Soft Recovery Diode

Features
• Ultrafast Recovery
trr = 60ns
• 175°C Operating Junction Temperature IF(AV) = 150Amp
Benefits
• Reduced RFI and EMI
VR = 400V
• Higher Frequency Operation
• Reduced Snubbing
• Reduced Parts Count

Description/ Applications
These diodes are optimized to reduce losses and EMI/ RFI in high frequency power conditioning systems.
The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited
for HF welding, power converters and other applications where switching losses are not significant portion of the total
losses.

Absolute Maximum Ratings

Parameters Max Units
VR Cathode to Anode Voltage 400 V
IF(AV) Continuous Forward Current, TC = 104°C 150 A
IFSM Single Pulse Forward Current, TC = 25°C 1500
IFRM ! Maximum Repetitive Forward Current 300
TJ, TSTG Operating Junction and Storage Temperatures - 55 to 175 °C
!"Square Wave, 20kHz

Case Styles

PowIRtab

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150EBU04
Bulletin PD-20744 rev. A 01/01

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameters Min Typ Max Units Test Conditions
VBR, Vr Breakdown Voltage, 400 - - V IR = 200µA
Blocking Voltage
VF Forward Voltage - 1.07 1.3 V IF = 150A

- 0.9 1.1 V IF = 150A, TJ = 175°C

- 0.96 1.17 V IF = 150A, TJ = 125°C

IR Reverse Leakage Current - - 50 µA VR = VR Rated

- - 4 mA TJ = 150°C, VR = VR Rated

CT Junction Capacitance - 100 - pF VR = 400V

LS Series Inductance - 3.5 - nH Measured lead to lead 5mm from package body

Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified)

Parameters Min Typ Max Units Test Conditions
t rr Reverse Recovery Time - - 60 ns IF = 1.0A, diF/dt = 200A/µs, VR = 30V

- 93 - TJ = 25°C IF = 150A
VR = 200V
- 172 - TJ = 125°C
diF /dt = 200A/µs
IRRM Peak Recovery Current - 11 - A TJ = 25°C

- 20 - TJ = 125°C

Qrr Reverse Recovery Charge - 490 - nC TJ = 25°C

- 1740 - TJ = 125°C

Thermal - Mechanical Characteristics

Parameters Min Typ Max Units
RthJC Thermal Resistance, Junction to Case 0.35 K/W

RthCS # Thermal Resistance, Case to Heatsink 0.2

Wt Weight 5.02 g
0.18 (oz)

T Mounting Torque 1.2 2.4 N*m

10 20 lbf.in
#"Mounting Surface, Flat, Smooth and Greased

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 150EBU04
Bulletin PD-20744 rev. A 01/01

1000 1000

T J = 175˚C
100

Reverse Current - I R (µA)

125˚C
10

1
25˚C
0.1
Instantaneous Forward Current - I F (A)

100
0.01

T = 175˚C 0.001
J
0 100 200 300 400
T = 125˚C Reverse Voltage - VR (V)
J
Fig. 2 - Typical Values Of Reverse Current
T = 25˚C Vs. Reverse Voltage
J
10000
T J = 25˚C
Junction Capacitance - C T (pF)

10

1000

100

1 10
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 10 100 1000
Forward Voltage Drop - VFM (V) Reverse Voltage - VR (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
1
Thermal Impedance Z thJC (°C/W)

D = 0.50
D = 0.20 PDM
D = 0.10
0.1
D = 0.05 t1
D = 0.02 Single Pulse t2
D = 0.01 (Thermal Resistance)
Notes:
1. Duty factor D = t1/ t 2
2. Peak Tj = Pdm x ZthJC + Tc
.01
0.00001 0.0001 0.001 0.01 0.1 1
t1, Rectangular Pulse Duration (Seconds)
Fig. 4 - Max. Thermal Impedance Z thJC Characteristics

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150EBU04
Bulletin PD-20744 rev. A 01/01

80 300
Allowable Case Temperature (°C)

Average Power Loss ( Watts )

60 250

40 RMS Limit
200
DC
20
150
00 D = 0.01
Square wave (D = 0.50) D = 0.02
100 D = 0.05
80 Rated Vr applied
D = 0.10
50 DDC
= 0.20
60
see note (3) D = 0.50
DC
40 0
0 50 100 150 200 250 0 50 100 150 200 250
Average Forward Current - IF(AV) (A) Average Forward Current - IF(AV)(A)

Fig. 5 - Max. Allowable Case Temperature Fig. 6 - Forward Power Loss Characteristics
Vs. Average Forward Current

250 5000
Vr = 200V
Tj = 125˚C IF = 150A 4500
Tj = 25˚C Vr = 200V
IF = 75A Tj = 125˚C
4000 Tj = 25˚C
200
3500 IF = 150A
IF = 75A
3000
Qrr ( nC )
trr ( ns )

150 2500

2000

1500
100
1000

500

50 0
100 1000 100 1000
di F /dt (A/µs ) di F /dt (A/µs )

Fig. 7 - Typical Reverse Recovery time vs. di F /dt Fig. 8 - Typical Stored Charge vs. di F /dt

(3) Formula used: TC = TJ - (Pd + PdREV) x RthJC ;

Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) (see Fig. 6);
PdREV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1 = rated VR

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 150EBU04
Bulletin PD-20744 rev. A 01/01

Reverse Recovery Circuit

VR = 200V

0.01 Ω
L = 70µH
D.U.T.

D
di F /dt
dif/dt
ADJUST IRFP250
G

Fig. 9- Reverse Recovery Parameter Test Circuit

3
trr
IF
ta tb
0

4
Q rr
2
I RRM 0.5 I RRM
di(rec)M/dt 5

0.75 I RRM

1 /dt
di fF/dt

1. diF/dt - Rate of change of current through zero 4. Qrr - Area under curve defined by t rr
crossing and IRRM
t rr x I RRM
2. IRRM - Peak reverse recovery current Q rr =
2
3. trr - Reverse recovery time measured from zero 5. di (rec) M / dt - Peak rate of change of
crossing point of negative going IF to point where current during t b portion of t rr
a line passing through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current

Fig. 10 - Reverse Recovery Waveform and Definitions

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150EBU04
Bulletin PD-20744 rev. A 01/01

Outline Table

Dimensions in millimeters and (inches)

Ordering Information Table

Device Code

150 E B U 04

1 2 3 4 5

1 - Current Rating (150 = 150A)

2 - Single Diode
3 - PowIRtab (Ultrafast/ Hyperfast only)
4 - Ultrafast Recovery
5 - Voltage Rating (04 = 400V)

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 01/01