BU208D

 BU508D/BU508DFI
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTORS
■ BU208D AND BU508DFI ARE STM
PREFERRED SALESTYPES
■ HIGH VOLTAGE CAPABILITY
■ U.L. RECOGNISED ISOWATT218 PACKAGE
(U.L. FILE # E81734 (N) TO-3
■ JEDEC TO-3 METAL CASE
■ NPN TRANSISTOR WITH INTEGRATED
1
FREEWHEELING DIODE 2

APPLICATIONS:
■ HORIZONTAL DEFLECTION FOR COLOUR
TV
3 3
DESCRIPTION 2 2
The BU208D, BU508D and BU508DFI are TO-218 1 ISOWATT218 1
manufactured using Multiepitaxial Mesa
technology for cost-effective high performance
and uses a Hollow Emitter structure to enhance
switching speeds. INTERNAL SCHEMATIC DIAGRAM

For TO-3 :
C = Tab
E = Pin2.

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit
V CES Collector-Emitter Voltage (V BE = 0) 1500 V
V CEO Collector-Emitter Voltage (I B = 0) 700 V
V EBO Emitter-Base Voltage (I C = 0) 10 V
IC Collector Current 8 A
I CM Collector Peak Current (tp < 5 ms) 15 A
TO - 3 T O - 218 ISOW ATT 218
o
P t ot Total Dissipation at T c = 25 C 150 125 50 W
o
T stg St orage Temperature -65 to 175 -65 to 150 -65 to 150 C
o
Tj Max. Operating Junction Temperature 175 150 150 C

June 1998 1/8

BU208D / BU508D / BU508DFI

THERMAL DATA
T O-3 TO-218 ISO WATT218
o
R t hj-ca se Thermal Resistance Junction-case Max 1 1 2.5 C/W

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)

Symb ol Parameter Test Cond ition s Min. Typ . Max. Un it
I CES Collector Cut-off V CE = 1500 V 1 mA
o
Current (V BE = 0) V CE = 1500 V T j = 125 C 2 mA
I EBO Emitter Cut-off Current V EB = 5 V 300 mA
(I C = 0)
V CEO(sus) Collector-Emitter I C = 100 m A 700 V
Sustaining Voltage
V CE(sat )∗ Collector-Emitter I C = 4.5 A IB = 2 A 1 V
Saturation Voltage
V BE(s at)∗ Base-Emitter I C = 4.5 A IB = 2 A 1.3 V
Saturation Voltage
INDUCTIVE LOAD I C = 4.5 A hFE = 2.5 VCC = 140 V
ts Storage Time L C = 0.9 mH L B = 3 µH 7 ms
tf Fall T ime 550 ns
VF Diode Forward Voltage IF = 4 A 2 V
fT Transition F requency I C = 0.1 A VCE = 5 V f = 5 MHz 7 MHz
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

Safe Operating Area (TO-3) Safe Operating Area (TO-218/ISOWATT218)

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 BU208D / BU508D / BU508DFI

DC Current Gain Collector Emitter Saturation Voltage

Base Emitter Saturation Voltage Switching Time Inductive Load

Switching Time Inductive Load (see figure 1) Switching Time Percentance vs. Case

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BU208D / BU508D / BU508DFI

Figure 1: Inductive Load Switching Test Circuit.

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 BU208D / BU508D / BU508DFI

TO-3 MECHANICAL DATA

mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.

A 11.00 13.10 0.433 0.516

B 0.97 1.15 0.038 0.045

C 1.50 1.65 0.059 0.065

D 8.32 8.92 0.327 0.351

E 19.00 20.00 0.748 0.787

G 10.70 11.10 0.421 0.437

N 16.50 17.20 0.649 0.677

P 25.00 26.00 0.984 1.023

R 4.00 4.09 0.157 0.161

U 38.50 39.30 1.515 1.547

V 30.00 30.30 1.187 1.193

A D
P

G C E
U

B
O
N

P003F
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BU208D / BU508D / BU508DFI

TO-218 (SOT-93) MECHANICAL DATA

mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.

A 4.7 4.9 0.185 0.193

C 1.17 1.37 0.046 0.054

D 2.5 0.098

E 0.5 0.78 0.019 0.030

F 1.1 1.3 0.043 0.051

G 10.8 11.1 0.425 0.437

H 14.7 15.2 0.578 0.598

L2 – 16.2 – 0.637

L3 18 0.708

L5 3.95 4.15 0.155 0.163

L6 31 1.220

R – 12.2 – 0.480

Ø 4 4.1 0.157 0.161

E
A
C

L5 L6

L3
L2
G
H

¯
F

R 1 2 3 P025A

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 BU208D / BU508D / BU508DFI

ISOWATT218 MECHANICAL DATA

mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 5.35 5.65 0.210 0.222
C 3.3 3.8 0.130 0.149
D 2.9 3.1 0.114 0.122
D1 1.88 2.08 0.074 0.081
E 0.75 1 0.029 0.039
F 1.05 1.25 0.041 0.049
G 10.8 11.2 0.425 0.441
H 15.8 16.2 0.622 0.637
L1 20.8 21.2 0.818 0.834
L2 19.1 19.9 0.752 0.783
L3 22.8 23.6 0.897 0.929
L4 40.5 42.5 1.594 1.673
L5 4.85 5.25 0.190 0.206
L6 20.25 20.75 0.797 0.817
M 3.5 3.7 0.137 0.145
N 2.1 2.3 0.082 0.090
U 4.6 0.181

L3

N
E
A

D
D1
C

L2

L5 L6
F

M
U

G
H

1 2 3
L1
L4
P025C

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BU208D / BU508D / BU508DFI

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical compone nts in life support devices or systems without express written approval of STMicroelectronics.
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 1998 STMicroelectronics – Printed in Italy – All Rights Reserved

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