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TLV62565, TLV62566
SLVSBC1D – OCTOBER 2013 – REVISED OCTOBER 2016

TLV6256x 1.5-A High Efficiency Step-Down Converters in SOT-23 5-Pin Package

1 Features 3 Description
•
1 2.7-V to 5.5-V Input Voltage Range The TLV62565/6 devices are synchronous step-down
converters optimized for small solution size and high
• 1.5-MHz Typical Switching Frequency efficiency. The devices integrate switches capable of
• Output Current up to 1.5 A (Max) delivering an output current up to 1.5 A.
• Adaptive On-Time Current Control The devices are based on an adaptive on time with
• Power Save Mode for Light Load Efficiency valley current mode control scheme. Typical
• 50-µA Operating Quiescent Current operating frequency is 1.5 MHz at medium to heavy
loads. The devices are optimized to achieve very low
• Up to 95% Efficiency
output voltage ripple even with small external
• Over Current Protection components and feature an excellent load transient
• 95% Maximum Duty Cycle response.
• Excellent AC and Transient Load Response During light load, the TLV62565/6 automatically enter
• Power Good Output, TLV62566 into Power Save Mode at the lowest quiescent
• Internal Soft Startup of 250 µs (Typ) current (50 μA typ) to maintain high efficiency over
the entire load current range. In shutdown, the
• Adjustable Output Voltage current consumption is reduced to less than 1 μA.
• Thermal Shutdown Protection
The TLV62565/6 provide an adjustable output voltage
• Available in SOT-23 5-Pin Package via an external resistor divider. The output voltage
start-up ramp is controlled by an internal soft start,
2 Applications typically 250 µs. Power sequencing is possible by
• Portable Devices configuring the Enable (TLV62565) and Power Good
(TLV62566) pins. Other features like over current
• DSL Modems protection and over temperature protection are built-
• Hard Disk Drivers in. The TLV62565/6 devices are available in a SOT-
• Set Top Box 23 5-pin package.
• Tablet Device Information(1)
PART NUMBER PACKAGE BODY SIZE (NOM)
TLV62565
SOT-23 (5) 2.90 mm × 2.80 mm
TLV62566
(1) For all available packages, see the orderable addendum at
the end of the datasheet.

4 Simplified Schematic
L1
2.2 µH
VIN VIN SW VOUT Efficiency vs Load Current
2.7 V to 5.5 V 1.8 V
R1 C2
C1 EN FB 240 kΩ 10 µF 100
4.7 µF
VOUT=1. 8V
GND R2 90
120 kΩ
80
TLV62565
Copyright © 2016, Texas Instruments Incorporated 70
Efficiency [%]

60
50
40
30
VVin=2.7V
IN=2.7V
20
VVin=3.6V
IN=3.6V
10
VVin=5.5V
IN=5.5V
0
10µ 100µ 1m 10m 100m 1
Load current [A] C001

An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
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SLVSBC1D – OCTOBER 2013 – REVISED OCTOBER 2016 www.ti.com

Table of Contents
1 Features .................................................................. 1 10 Application and Implementation........................ 10
2 Applications ........................................................... 1 10.1 Application Information.......................................... 10
3 Description ............................................................. 1 10.2 Typical Application ................................................ 10
4 Simplified Schematic............................................. 1 11 Power Supply Recommendations ..................... 15
5 Revision History..................................................... 2 12 Layout................................................................... 16
6 Device Comparison Table..................................... 3 12.1 Layout Guidelines ................................................. 16
12.2 Layout Example .................................................... 16
7 Pin Configuration and Functions ......................... 3
12.3 Thermal Considerations ........................................ 16
8 Specifications......................................................... 4
8.1 Absolute Maximum Ratings ...................................... 4 13 Device and Documentation Support ................. 17
13.1 Device Support...................................................... 17
8.2 ESD Ratings.............................................................. 4
13.2 Documentation Support ....................................... 17
8.3 Recommended Operating Conditions ...................... 4
13.3 Related Links ........................................................ 17
8.4 Thermal Information .................................................. 4
13.4 Receiving Notification of Documentation Updates 17
8.5 Electrical Characteristics.......................................... 5
13.5 Community Resources.......................................... 17
8.6 Typical Characteristics .............................................. 6
13.6 Trademarks ........................................................... 17
9 Detailed Description .............................................. 7
13.7 Electrostatic Discharge Caution ............................ 17
9.1 Overview ................................................................... 7
13.8 Glossary ................................................................ 18
9.2 Functional Block Diagrams ....................................... 7
9.3 Feature Description................................................... 8 14 Mechanical, Packaging, and Orderable
Information ........................................................... 18
9.4 Device Functional Modes.......................................... 9

5 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.

Changes from Revision C (July 2015) to Revision D Page

• Added typical value of valley current limit for the ILIM,LS spec................................................................................................. 5
• Added typical value of peak current limit for the ILIM,HS spec.................................................................................................. 5
• Updated Power Save Mode description ................................................................................................................................ 8
• Updated Switch Current Limit description ............................................................................................................................. 9
• Updated maximum output voltage setting in the Setting the Output Voltage section .......................................................... 12
• Added Receiving Notification of Documentation Updates section. ...................................................................................... 17

Changes from Revision B (December 2014) to Revision C Page

• Changed device From: TLV62566 to TLV62565 for EN in the Device Comparison Table ................................................... 3

Changes from Revision A (November 2014) to Revision B Page

• Added Storage temperature to Absolute Maximum Ratings .................................................................................................. 4

• Changed Handling Ratings to ESD Ratings........................................................................................................................... 4
• Deleted Storage temperature from ESD Ratings ................................................................................................................... 4
• Changed Thermal Information to Thermal Considerations and moved to Layout section ................................................... 16

Changes from Original (October 2013) to Revision A Page

• Changed Added Handling Rating table, Feature Description section, Device Functional Modes, Application and
Implementation section, Power Supply Recommendations section, Layout section, Device and Documentation
Support section, and Mechanical, Packaging, and Orderable Information section................................................................ 1
• Added "TA = -40°C to 85°C" to the VFB, Feedback regulation voltage Test Conditions ........................................................ 5
• Added VFB, Feedback regulation voltage Test Conditions and values for "PWM operation, TA = 85°C"............................... 5

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6 Device Comparison Table

PART NUMBER FUNCTION

TLV62565 EN
TLV62566 PG

7 Pin Configuration and Functions

5-Pin SOT-23
DBV Package
(Top View)
FB VIN

5 4

1 2 3

EN/PG GND SW

Pin Functions
PIN
NUMBER I/O/PWR DESCRIPTION
NAME
TLV62565 TLV62566
Device enable logic input. Logic HIGH enables the device, logic low disables the device
EN 1 — I
and turns it into shutdown. Do not leave floating.
Feedback pin for the internal control loop. Connect this pin to the external feedback
FB 5 5 I
divider.
GND 2 2 PWR Ground pin.
Power Good open drain output. This pin is high impedance if the output voltage is within
PG — 1 O regulation. It is pulled low if the output is below its nominal value. It is also low when VIN
is below UVLO or thermal shutdown triggers.
Switch pin connected to the internal MOSFET switches and inductor terminal. Connect
SW 3 3 PWR
the inductor of the output filter to this pin.
VIN 4 4 PWR Power supply voltage input.

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8 Specifications
8.1 Absolute Maximum Ratings
Over operating free-air temperature range (unless otherwise noted) (1)
MIN MAX UNIT
VIN, EN, PG –0.3 7 V
(2)
Voltage SW –0.3 VIN+0.3 V
FB –0.3 3.6 V
Sink current, IPG PG 660 µA
Operating junction temperature, TJ –40 150 °C
Storage temperature, Tstg –65 150 °C

(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute–maximum–rated conditions for extended periods may affect device reliability.
(2) All voltage values are with respect to network ground terminal.

8.2 ESD Ratings

VALUE UNIT
Electrostatic Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1) ±2000 V
V(ESD)
discharge Charged-device model (CDM), per JEDEC specification JESD22-C101 (2)
±500 V

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

8.3 Recommended Operating Conditions (1)

MIN TYP MAX UNIT
VIN Input voltage, VIN 2.7 5.5 V
TA Operating ambient temperature –40 85 °C

(1) Refer to the Application and Implementation section for further information.

8.4 Thermal Information

TLV62565, TLV62566
THERMAL METRIC (1) UNIT
DBV (5 Pins)
RθJA Junction-to-ambient thermal resistance 208.3 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 73.7 °C/W
RθJB Junction-to-board thermal resistance 36.1 °C/W
ψJT Junction-to-top characterization parameter 2.3 °C/W
ψJB Junction-to-board characterization parameter 35.3 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance N/A °C/W

(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

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8.5 Electrical Characteristics

VIN = 3.6 V, TA = -40°C to 85°C, typical values are at TA = 25°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SUPPLY
VIN Input voltage 2.7 5.5 V
IQ Quiescent current into VIN pin IOUT = 0 mA, Not switching 50 uA
Under voltage lock out VIN falling 2.2 2.3 V
VUVLO
Under voltage lock out hysteresis 200 mV
Thermal shutdown Junction temperature rising 150
TJSD °C
Thermal shutdown hysteresis Junction temperature falling below TJSD 20
LOGIC INTERFACE, TLV62565
VIH High-level input voltage 2.7 V ≤ VIN ≤ 5.5 V 1.2 V
VIL Low-level input voltage 2.7 V ≤ VIN ≤ 5.5 V 0.4 V
ISD Shutdown current into VIN pin EN = LOW 0.1 1 µA
IEN,LKG EN leakage current 0.01 0.16 µA
POWER GOOD, TLV62566
Power Good low threshold VFB falling referenced to VFB nominal 90%
VPG
Power Good high threshold⋁ VFB risng referenced to VFB nominal 95%
VL Low level voltage Isink = 500 µA 0.4 V
IPG,LKG PG Leakage current VPG = 5.0 V 0.01 0.17 µA
OUTPUT
VOUT Output voltage 0.6 DMAX.VIN V
PWM operation, TA = -40°C to 85°C 0.588 0.6 0.612 V
VFB Feedback regulation voltage PWM operation, TA = 85°C 0.594 0.6 0.606 V
PFM comparator threshold 0.9%
IFB Feedback input bias current VFB = 0.6 V 10 100 nA
High-side FET on resistance ISW = 500 mA, VIN = 3.6 V 173
RDS(on) mΩ
Low-side FET on resistance ISW = 500 mA, VIN = 3.6 V 105
ILIM,LS Low-side FET valley current limit 1.5 1.7 A
ILIM,HS High-side FET peak current limit 1.8 2.0 A
fSW Switching frequency 1.5 MHz
DMAX Maximum duty cycle 95%
tOFF,MIN Minimum off time 40 ns

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8.6 Typical Characteristics

100 300
VOUT = 0.6V Load = 0.5A TTa=-40°C
A=±40°C
90 280
TTa=25°C
A=25°C
260

HS Mos Resistance [m @
80
Quiescent current [µA]

TTa=85°
A=85°C
C
240
70
220
60
200
50
180
40 160
Ta=-40°
T C
A=±40°C
30 140
Ta=25°
T C
A=25°C
20 120
Ta=85°
T C
A=85°C
10 100
2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
Input Voltage [V] C009 Input Voltage [V] C007

Figure 1. Quiescent Current vs Input Voltage

Figure 2. High-Side FET RDS(on) vs Input Voltage

190 Load = 0.5A TTa=-40°

C
A=±40°C

TTa=25°
A=25°CC
170
LS Mos Resistance [m @

TTa=85°
A=85°CC
150

130

110

90

70

50
2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
Input Voltage [V] C008

Figure 3. Low-Side FET RDS(on) vs Input Voltage

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9 Detailed Description

9.1 Overview
The TLV62565/6 device family includes two high-efficiency synchronous step-down converters. Each device
operates with an adaptive on-time control scheme, which is able to dynamically adjust the on-time duration
based on the input voltage and output voltage so that it can achieve relative constant frequency operation. The
device operates at typically 1.5-MHz frequency pulse width modulation (PWM) at moderate to heavy load
currents. Based on the VIN/VOUT ratio, a simple circuit sets the required on time for the high-side MOSFET. It
makes the switching frequency relatively constant regardless of the variation of input voltage, output voltage, and
load current. At the beginning of each switching cycle, the high-side switch is turned on and the inductor current
ramps up to a peak current that is defined by on time and inductance. In the second phase, once the on time
expires, the high-side switch is turned off while the low-side switch is turned on. The current through the inductor
then decays until triggering the valley current level determined by the output of the error amplifier. Once this
occurs, the on timer is set to turn the high-side switch back on again and the cycle is repeated.
The TLV62565/6 device family offers excellent load transient response with a unique fast response constant on-
time valley current mode. The switching frequency changes during load transition so that the output voltage
comes back in regulation faster than a traditional fixed PWM control scheme. Internal loop compensation is
integrated which simplifies the design process while minimizing the number of external components. At light load
currents the device automatically operates in Power Save Mode with pulse frequency modulation (PFM).

9.2 Functional Block Diagrams

VIN

Soft Thermal
UVLO
start Shutdown

Current Limit
Detect

PMOS
EN Control Logic
DBG

Gate Drive SW
_ NMOS
FB
GM Pulse
DBG
+ Modulator
Vref

Valley
Current
Detect
SW Duty Detect GND

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Figure 4. TLV62565 Functional Block Diagram

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Functional Block Diagrams (continued)

PG VIN

Soft Thermal
UVLO
start Shutdown

Current Limit
Detect

PMOS
Control Logic
DBG

Gate Drive SW
_ NMOS
FB
GM Pulse
DBG
+ Modulator
Vref

Valley
Current
Detect
SW Duty Detect GND

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Figure 5. TLV62566 Functional Block Diagram

9.3 Feature Description

9.3.1 Power Save Mode
The device integrates a Power Save Mode with PFM to improve efficiency at light load, as shown in Figure 6
When the inductor current becomes discontinuous, the device enters Power Save Mode. In Power Save Mode,
the FB voltage is typically 0.9% higher than the nominal value of 0.6 V. Thus the device ramps up the output
voltage with several pulses, and the device stops switching when the output voltage reaches 0.9% above the
nominal output voltage.
When the inductor current becomes continuous again, the device leaves Power Save Mode and the FB voltage
is back to the norminal value of 0.6 V.
Output Voltage

PFM mode at light load

VOUT_PFM

PWM mode at medium / heavy load

VOUT_NOM

t
Figure 6. Output Voltage in PFM/PWM Mode

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Feature Description (continued)

9.3.2 Enabling/Disabling the Device
The TLV62565 is enabled by setting the EN input to a logic HIGH. Accordingly, a logic LOW disables the device.
If the device is enabled, the internal power stage starts switching and regulates the output voltage to the set point
voltage. The EN input must be terminated and should not be left floating.

9.3.3 Soft Start

After enabling the device, internal soft-start circuitry monotonically ramps up the output voltage which reaches
nominal output voltage during a soft-start time of 250 µs (typical). This avoids excessive inrush current and
creates a smooth output voltage rise slope. It also prevents excessive voltage drops of primary cells and
rechargeable batteries with high internal impedance.
If the output voltage is not reached within the soft-start time, such as in the case of a heavy load, the converter
enters regular operation. The TLV62565/6 are able to start into a pre-biased output capacitor. The converter
starts with the applied bias voltage and ramps the output voltage to its nominal value.

9.3.4 Switch Current Limit

The switch current limit prevents the device from high inductor current and drawing excessive current from a
battery or input voltage rail. Excessive current might occur with a heavy load or shorted output circuit condition.
The TLV62565/6 adopt valley current control by sensing the current of the low-side FET. If the inductor current
reaches the low-side FET valley current limit ILIM,LS (typical 1.7 A), the low-side FET is turned off and the high-
side FET is turned on to ramp up the inductor current. The current ramping up time is controlled by the on time
setting of the device, as shown in Figure 7. For example, the peak current is 1.97 A when the switch current limit
is triggered with 3.6 VIN to 1.8 VOUT and 2.2-μH application.
To prevent the inductor current from running away, the devices implement an additional high-side peak current
limit ILIM,HS (typical 2 A), which is shown in Figure 7. It forces to turn off the high side FET immediately once the
peak inductor current reaches the threshold. Due to the internal propagation delay, the real current limit value
might be higher than the static current limit in the electrical characteristics table.
Inductor Current

High-side FET peak current limit

Peak current at low-side
FET valley current limit

Maximum load current

Low-side FET valley current limit

Figure 7. Switch Current Limit

9.3.5 Power Good

The TLV62566 integrates a Power Good output going low when the output voltage is below its nominal value.
The Power Good output stays high impedance once the output is above 95% of the regulated voltage and is low
once the output voltage falls below typically 90% of the regulated voltage. The PG pin is an open drain output
and is specified to sink typically up to 0.5 mA. The Power Good output requires a pull-up resistor connected to
any voltage lower than 5.5 V. When the device is off due to UVLO or thermal shutdown, the PG pin is pulled to
logic low.

9.4 Device Functional Modes

9.4.1 Under Voltage Lockout
To avoid mis-operation of the device at low input voltages, under voltage lockout is implemented that shuts down
the device at voltages lower than VUVLO with VHYS_UVLO hysteresis.

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Device Functional Modes (continued)

9.4.2 Thermal Shutdown
The device enters thermal shutdown once the junction temperature exceeds typically TJSD. Once the device
temperature falls below the threshold with hysteresis, the device returns to normal operation automatically.
Power Good is pulled low when thermal protection is triggered.

10 Application and Implementation

NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.

10.1 Application Information

The TLV6256x devices are synchronous step-down converters optimized for small solution size and high
efficiency. The devices integrate switches capable of delivering an output current up to 1.5 A.

10.2 Typical Application

TLV62565 2.7-V to 5.5-V input, 1.2-V output converter.
L1
2.2 µH
VIN VIN SW VOUT
2.7 V to 5.5 V 1.8 V
R1 C2
C1 EN FB 240 kΩ 10 µF
4.7 µF
GND R2
120 kΩ

TLV62565
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Figure 8. TLV62565 1.2-V Output Application

Table 1. List of Components

REFERENCE DESCRIPTION MANUFACTURER
C1 4.7 µF, Ceramic Capacitor, 6.3 V, X5R, size 0603, GRM188R60J475ME84 Murata
C2 10 µF, Ceramic Capacitor, 6.3 V, X5R, size 0603, GRM188R60J106ME84 Murata
L1 2.2 µH, Power Inductor, 2.5 A, size 4mmx4mm, LQH44PN2R2MP0 Murata
R1, R2 Chip resistor,1%,size 0603 Std.

10.2.1 Design Requirements

10.2.1.1 Output Filter Design

The inductor and output capacitor together provide a low-pass frequency filter. To simplify this process, Table 2
outlines possible inductor and capacitor value combinations.

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Table 2. Matrix of Output Capacitor and Inductor Combinations

COUT [µF] (2) (3)
L [µH] (1)
4.7 10 22 47 100
1
(4)
2.2 + + (4) +
4.7

(1) Inductor tolerance and current de-rating is anticipated. The effective inductance can vary by +20% and
-30%.
(2) Capacitance tolerance and bias voltage de-rating is anticipated. The effective capacitance can vary by
+20% and -50%.
(3) For low output voltage applications (≤ 1.2 V), more output capacitance is recommended (usually ≥ 22
µF) for smaller ripple.
(4) Typical application configuration. '+' indicates recommended filter combinations.
10.2.1.2 Inductor Selection
The main parameters for inductor selection is inductor value and then saturation current of the inductor. To
calculate the maximum inductor current under static load conditions, Equation 1 is given:
DI
IL,MAX = IOUT,MAX + L
2

VOUT
1-
VIN
DIL = VOUT ´
L ´ fSW

where:
• IOUT,MAX is the maximum output current
• ΔIL is the inductor current ripple
• fSW is the switching frequency
• L is the inductor value (1)
It is recommended to choose a saturation current for the inductor that is approximately 20% to 30% higher than
IL,MAX. In addition, DC resistance and size should also be taken into account when selecting an appropriate
inductor. The recommended inductors are listed in Table 3.

Table 3. List of Recommended Inductors

INDUCTANCE CURRENT RATING DIMENSIONS DC RESISTANCE
TYPE MANUFACTURER
[µH] [mA] L x W x H [mm3] [mΩ typ]
2.2 2500 4 x 3.7 x 1.65 49 LQH44PN2R2MP0 Murata
2.2 3000 4 x 4 x 1.8 50 NRS4018T2R2MDGJ Taiyo Yuden

10.2.1.3 Input and Output Capacitor Selection

The input capacitor is the low impedance energy source for the converter that helps provide stable operation.
The closer the input capacitor is placed to the VIN and GND pins, the lower the switch ring. A low ESR multilayer
ceramic capacitor is recommended for best filtering. For most applications, 4.7-µF input capacitance is sufficient;
a larger value reduces input voltage ripple.
The architecture of the TLV62565/6 allow use of tiny ceramic-type output capacitors with low equivalent series
resistance (ESR). These capacitors provide low output voltage ripple and are thus recommended. To keep its
resistance up to high frequencies and to achieve narrow capacitance variation with temperature, it is
recommended to use X7R or X5R dielectric. The TLV62565/6 are designed to operate with an output
capacitance of 10 µF to 47 µF, as outlined in Table 2.

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10.2.2 Detailed Design Procedure

10.2.2.1 Setting the Output Voltage

An external resistor divider is used to set output voltage. By selecting R1 and R2, the output voltage is
programmed to the desired value. When the output voltage is regulated, the typical voltage at the FB pin is VFB.
Equation 2, Equation 3, and Equation 4 can be used to calculate R1 and R2.
When sizing R2, in order to achieve low current consumption and acceptable noise sensitivity, use a minimum of
5 μA for the feedback current IFB. Larger currents through R2 improve noise sensitivity and output voltage
accuracy but increase current consumption.
æ R1 ö æ R1 ö
VOUT = VFB ´ ç 1 + ÷ = 0.6V ´ ç 1 + ÷
è R2 ø è R2 ø (2)
VFB 0.6V
R2 = = = 120kW
I FB 5mA (3)
V V
R1 = R 2 ´ ( OUT - 1) = R 2 ´ ( OUT - 1)
VFB 0.6V (4)
Due to the maximum duty cycle limit, the output voltage is out of regulation if the input voltage is too low. For
proper regulation, VOUT should be set below VIN_MIN as shown in Equation 5.
VOUT £ VIN_MIN ´ DMAX

where
• VIN_MIN, the minimum value of the input voltage; (5)

10.2.2.2 Loop Stability

The first step of circuit and stability evaluation is to look from a steady-state perspective at the following signals:
• Switching node, SW
• Inductor current, IL
• Output ripple voltage, VOUT(AC)
These are the basic signals that need to be measured when evaluating a switching converter. When the
switching waveform shows large duty cycle jitter or the output voltage or inductor current shows oscillations, the
regulation loop may be unstable. This is often a result of board layout and/or L-C combination. Applications with
the recommended L-C combinations in Table 2 are designed for good loop stability as well as fast load transient
response.
As a next step in the evaluation of the regulation loop, the load transient response is illustrated. The TLV62565/6
use a constant on time with valley current mode control, so the on time of the high-side MOSFET is relatively
consistent from cycle to cycle when a load transient occurs. Whereas the off time adjusts dynamically in
accordance with the instantaneous load change and brings VOUT back to the regulated value.
During recovery time, VOUT can be monitored for settling time, overshoot, or ringing which helps judge the
stability of the converter. Without any ringing, the loop usually has more than 45° of phase margin.

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10.2.3 Application Performance Curves

100 100
VOUT=1. 8V VOUT=1.2V
90 90
80 80
70 70
Efficiency [%]

Efficiency [%]
60 60
50 50
40 40
30 30
VVin=2.7V
IN=2.7V VVin=2.7V
IN=2.7V
20 20
VVin=3.6V
IN=3.6V VVin=3.6V
IN=3.6V
10 10
VVin=5.5V
IN=5.5V VVin=5.5V
IN=5.5V
0 0
10µ 100µ 1m 10m 100m 1 10µ 100µ 1m 10m 100m 1
Load current [A] C001 Load current [A] C002

Figure 9. Efficiency vs Load Current Figure 10. Efficiency vs Load Current

100 1.85
VOUT=3.3V Load=0.5A
90 1.84
Load=1A
80 1.83
Load=1.5A
Output Voltage [V]

70 1.82
Efficiency [%]

60 1.81
50 1.80
40 1.79
30 1.78
20 VVin=4.2V 1.77
IN=4.2V
10 1.76
VVin=5.5V
IN=5.5V
0 1.75
10µ 100µ 1m 10m 100m 1 2.5 3 3.5 4 4.5 5 5.5 6
Load current [A] C003 Input Voltage[V] C011

Figure 11. Efficiency vs Load Current Figure 12. Output Voltage vs Input Voltage

1.85
VIN = 3.6 V
1.84 VO = 1.8 V

1.83 Vo
10 mV/div
1.82
Output voltage [V]

1.81
1.80
SW
1.79 2 V/div
1.78
Vin=2.7V
V IN=2.7V
1.77 Iinductor
V IN=3.6V
Vin=3.6V
1A/div
1.76
V IN=5.5V
Vin=5.5V
1.75
10µ 100µ 1m 10m 100m 1
0.4 µs/div G001

Load current [A] C004

IOUT = 1.5 A

Figure 13. Output Voltage vs Load Current Figure 14. Typical Application (PWM Mode)

Copyright © 2013–2016, Texas Instruments Incorporated Submit Documentation Feedback 13

Product Folder Links: TLV62565 TLV62566
TLV62565, TLV62566
SLVSBC1D – OCTOBER 2013 – REVISED OCTOBER 2016 www.ti.com

VIN = 3.6 V VIN = 3.6 V

VO = 1.8 V/100mA VO = 1.8 V/10mA
Vo Vo
20 mV/div 20 mV/div

SW SW
2 V/div 2 V/div

Iinductor Iinductor
1A/div 1A/div

2.0 µs/div G002 10 µs/div G003

Figure 15. Typical Application (PFM Mode) Figure 16. Typical Application (PFM Mode)

VIN = 3.6 V
VO = 1.8 V
L=2.2 uH, Co=10 uF
Vo Vo Load: 1.3 A to 0.3 A
0.1 V/div 0.1 V/div

Io Io
1 A/div 1 A/div

Iinductor Iinductor
VIN = 3.6 V
1 A/div VO = 1.8 V 1 A/div
L=2.2 uH,Co=10 uF
Load: 0.3 A to 1.3 A

4.0 µs/div G007 4.0 µs/div G008

Figure 17. Load Transient Figure 18. Load Transient

VIN = 3.6 V VIN = 3.6 V

VO = 1.8 V VO = 1.8 V
Vo Load= 0 A
1 V/div
Vo
1 V/div PG
1 V/div
EN VIN
2 V/div 5 V/div
Iinductor Iinductor
1A/div 1A/div

400 µs/div G004 400 µs/div G005

IOUT = 1.5 A

Figure 19. Start Up Figure 20. Start Up (Power Good)

14 Submit Documentation Feedback Copyright © 2013–2016, Texas Instruments Incorporated

Product Folder Links: TLV62565 TLV62566

 TLV62565, TLV62566
www.ti.com SLVSBC1D – OCTOBER 2013 – REVISED OCTOBER 2016

VIN = 3.6 V
VO = 1.8 V

Vo
1 V/div

Io
1 A/div

Iinductor
1 A/div

2.0 µs/div G006

No load to short circuit

Figure 21. Short Circuit Protection

11 Power Supply Recommendations

The power supply to the TLV62565 and TLV62566 needs to have a current rating according to the supply
voltage, output voltage and output current of the TLV62565 and TLV62566.

Copyright © 2013–2016, Texas Instruments Incorporated Submit Documentation Feedback 15

Product Folder Links: TLV62565 TLV62566
TLV62565, TLV62566
SLVSBC1D – OCTOBER 2013 – REVISED OCTOBER 2016 www.ti.com

12 Layout

12.1 Layout Guidelines

The PCB layout is an important step to maintain the high performance of the TLV62565 devices.
• The input/output capacitors and the inductor should be placed as close as possible to the IC. This keeps the
traces short. Routing these traces direct and wide results in low trace resistance and low parasitic inductance.
• A common power GND should be used.
• The low side of the input and output capacitors must be connected properly to the power GND to avoid a
GND potential shift.
• The sense traces connected to FB are signal traces. Special care should be taken to avoid noise being
induced. Keep these traces away from SW nodes.
• GND layers might be used for shielding.

12.2 Layout Example

VIN L1 VOUT

VIN SW C2
C1
GND
GND
EN
FB /PG

R2
R1
Figure 22. TLV62565/6 Layout

12.3 Thermal Considerations

Implementation of integrated circuits in low-profile and fine-pitch surface-mount packages typically requires
special attention to power dissipation. Many system-dependent issues such as thermal coupling, airflow,
convection surfaces, and the presence of other heat-generating components affect the power dissipation limits of
a given component.
Two basic approaches for enhancing thermal performance are listed below:
• Improving the power dissipation capability of the PCB design
• Introducing airflow in the system
For more details on how to use the thermal parameters, see the application notes: Thermal Characteristics
Application Notes SZZA017 and SPRA953.

16 Submit Documentation Feedback Copyright © 2013–2016, Texas Instruments Incorporated

Product Folder Links: TLV62565 TLV62566

 TLV62565, TLV62566
www.ti.com SLVSBC1D – OCTOBER 2013 – REVISED OCTOBER 2016

13 Device and Documentation Support

13.1 Device Support

13.1.1 Third-Party Products Disclaimer

TI'S PUBLICATION OF INFORMATION REGARDING THIRD-PARTY PRODUCTS OR SERVICES DOES NOT
CONSTITUTE AN ENDORSEMENT REGARDING THE SUITABILITY OF SUCH PRODUCTS OR SERVICES
OR A WARRANTY, REPRESENTATION OR ENDORSEMENT OF SUCH PRODUCTS OR SERVICES, EITHER
ALONE OR IN COMBINATION WITH ANY TI PRODUCT OR SERVICE.

13.2 Documentation Support

13.2.1 Related Documentation
Semiconductor and IC Package Thermal Metrics Application Report (SPRA953)
Thermal Characteristics of Linear and Logic Packages Using JEDEC PCB Designs Application Report
(SZZA017)

13.3 Related Links

The table below lists quick access links. Categories include technical documents, support and community
resources, tools and software, and quick access to sample or buy.

Table 4. Related Links

TECHNICAL TOOLS & SUPPORT &
PARTS PRODUCT FOLDER SAMPLE & BUY
DOCUMENTS SOFTWARE COMMUNITY
TLV62565 Click here Click here Click here Click here Click here
TLV62566 Click here Click here Click here Click here Click here

13.4 Receiving Notification of Documentation Updates

To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper
right corner, click on Alert me to register and receive a weekly digest of any product information that has
changed. For change details, review the revision history included in any revised document.

13.5 Community Resources

The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.

13.6 Trademarks
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
13.7 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.

Copyright © 2013–2016, Texas Instruments Incorporated Submit Documentation Feedback 17

Product Folder Links: TLV62565 TLV62566
TLV62565, TLV62566
SLVSBC1D – OCTOBER 2013 – REVISED OCTOBER 2016 www.ti.com

13.8 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.

14 Mechanical, Packaging, and Orderable Information

The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.

18 Submit Documentation Feedback Copyright © 2013–2016, Texas Instruments Incorporated

Product Folder Links: TLV62565 TLV62566

 PACKAGE OPTION ADDENDUM

www.ti.com 5-Oct-2016

PACKAGING INFORMATION

Orderable Device Status Package Type Package Pins Package Eco Plan Lead/Ball Finish MSL Peak Temp Op Temp (°C) Device Marking Samples
(1) Drawing Qty (2) (6) (3) (4/5)

TLV62565DBVR ACTIVE SOT-23 DBV 5 3000 Green (RoHS CU NIPDAU Level-1-260C-UNLIM -40 to 85 SIK
& no Sb/Br)
TLV62565DBVT ACTIVE SOT-23 DBV 5 250 Green (RoHS CU NIPDAU Level-1-260C-UNLIM -40 to 85 SIK
& no Sb/Br)
TLV62566DBVR ACTIVE SOT-23 DBV 5 3000 Green (RoHS CU NIPDAU Level-1-260C-UNLIM -40 to 85 SIL
& no Sb/Br)
TLV62566DBVT ACTIVE SOT-23 DBV 5 250 Green (RoHS CU NIPDAU Level-1-260C-UNLIM -40 to 85 SIL
& no Sb/Br)

(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.

(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)

(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.

(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.

(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.

(6)
Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.

Addendum-Page 1
 PACKAGE OPTION ADDENDUM

www.ti.com 5-Oct-2016

Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.

In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.

Addendum-Page 2
 PACKAGE MATERIALS INFORMATION

www.ti.com 18-May-2019

TAPE AND REEL INFORMATION

*All dimensions are nominal

Device Package Package Pins SPQ Reel Reel A0 B0 K0 P1 W Pin1
Type Drawing Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) W1 (mm)
TLV62565DBVR SOT-23 DBV 5 3000 178.0 9.0 3.23 3.17 1.37 4.0 8.0 Q3
TLV62565DBVR SOT-23 DBV 5 3000 180.0 8.4 3.23 3.17 1.37 4.0 8.0 Q3
TLV62565DBVR SOT-23 DBV 5 3000 180.0 8.4 3.2 3.2 1.4 4.0 8.0 Q3
TLV62565DBVT SOT-23 DBV 5 250 180.0 8.4 3.2 3.2 1.4 4.0 8.0 Q3
TLV62565DBVT SOT-23 DBV 5 250 180.0 8.4 3.23 3.17 1.37 4.0 8.0 Q3
TLV62565DBVT SOT-23 DBV 5 250 178.0 9.0 3.23 3.17 1.37 4.0 8.0 Q3
TLV62566DBVR SOT-23 DBV 5 3000 180.0 8.4 3.2 3.2 1.4 4.0 8.0 Q3
TLV62566DBVR SOT-23 DBV 5 3000 178.0 9.0 3.23 3.17 1.37 4.0 8.0 Q3
TLV62566DBVT SOT-23 DBV 5 250 178.0 9.0 3.23 3.17 1.37 4.0 8.0 Q3

Pack Materials-Page 1
 PACKAGE MATERIALS INFORMATION

www.ti.com 18-May-2019

*All dimensions are nominal

Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
TLV62565DBVR SOT-23 DBV 5 3000 180.0 180.0 18.0
TLV62565DBVR SOT-23 DBV 5 3000 183.0 183.0 20.0
TLV62565DBVR SOT-23 DBV 5 3000 210.0 185.0 35.0
TLV62565DBVT SOT-23 DBV 5 250 210.0 185.0 35.0
TLV62565DBVT SOT-23 DBV 5 250 183.0 183.0 20.0
TLV62565DBVT SOT-23 DBV 5 250 180.0 180.0 18.0
TLV62566DBVR SOT-23 DBV 5 3000 210.0 185.0 35.0
TLV62566DBVR SOT-23 DBV 5 3000 180.0 180.0 18.0
TLV62566DBVT SOT-23 DBV 5 250 180.0 180.0 18.0

Pack Materials-Page 2
 PACKAGE OUTLINE
DBV0005A SCALE 4.000
SOT-23 - 1.45 mm max height
SMALL OUTLINE TRANSISTOR

C
3.0
2.6 0.1 C
1.75
B A 1.45 MAX
1.45
PIN 1
INDEX AREA

1 5

2X 0.95
3.05
2.75
1.9 1.9
2

4
3
0.5
5X
0.3
0.15
0.2 C A B (1.1) TYP
0.00

0.25
GAGE PLANE 0.22
TYP
0.08

8
TYP 0.6
0 TYP SEATING PLANE
0.3

4214839/D 11/2018

NOTES:

1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. Refernce JEDEC MO-178.
4. Body dimensions do not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not
exceed 0.15 mm per side.

www.ti.com
 EXAMPLE BOARD LAYOUT
DBV0005A SOT-23 - 1.45 mm max height
SMALL OUTLINE TRANSISTOR

PKG
5X (1.1)
1
5
5X (0.6)

SYMM
(1.9)
2
2X (0.95)

3 4

(R0.05) TYP (2.6)

LAND PATTERN EXAMPLE

EXPOSED METAL SHOWN
SCALE:15X

SOLDER MASK
SOLDER MASK METAL METAL UNDER OPENING
OPENING SOLDER MASK

EXPOSED METAL EXPOSED METAL

0.07 MAX 0.07 MIN

ARROUND ARROUND

NON SOLDER MASK SOLDER MASK

DEFINED DEFINED
(PREFERRED)

SOLDER MASK DETAILS

4214839/D 11/2018

NOTES: (continued)

5. Publication IPC-7351 may have alternate designs.

6. Solder mask tolerances between and around signal pads can vary based on board fabrication site.

www.ti.com
 EXAMPLE STENCIL DESIGN
DBV0005A SOT-23 - 1.45 mm max height
SMALL OUTLINE TRANSISTOR

PKG
5X (1.1)
1
5
5X (0.6)

SYMM
2 (1.9)
2X(0.95)

3 4

(R0.05) TYP
(2.6)

SOLDER PASTE EXAMPLE

BASED ON 0.125 mm THICK STENCIL
SCALE:15X

4214839/D 11/2018

NOTES: (continued)

7. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
8. Board assembly site may have different recommendations for stencil design.

www.ti.com
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