PD - 96966B

PDP MOSFET IRFP4242PbF

Features
l Advanced process technology
Key Parameters
l Key parameters optimized for PDP Sustain & VDS min 300 V
Energy Recovery applications VDS (Avalanche) typ. 360 V
l Low EPULSE rating to reduce the power
RDS(ON) typ. @ 10V 49 m:
dissipation in Sustain & ER applications
l Low QG for fast response
IRP max @ TC= 100°C 93 A
l High repetitive peak current capability for TJ max 175 °C
reliable operation
D D
l Short fall & rise times for fast switching

l175°C operating junction temperature for

improved ruggedness
S
l Repetitive avalanche capability for robustness
G D
and reliability G

S TO-247AC

G D S
G a te D ra in S o u rc e
Description
This HEXFET® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch
applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve
low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175°C
operating junction temperature and high repetitive peak current capability. These features combine to
make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.

Absolute Maximum Ratings

Parameter Max. Units
VGS Gate-to-Source Voltage ±30 V
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 46 A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 33
IDM Pulsed Drain Current c 190
IRP @ TC = 100°C Repetitive Peak Current g 93
PD @TC = 25°C Power Dissipation 430 W
PD @TC = 100°C Power Dissipation 210
Linear Derating Factor 2.9 W/°C
TJ Operating Junction and -40 to + 175 °C
TSTG Storage Temperature Range
Soldering Temperature for 10 seconds 300
Mounting Torque, 6-32 or M3 Screw x
10lb in (1.1N m) x N
Thermal Resistance
Parameter Typ. Max. Units
RθJC Junction-to-Case f ––– 0.35 °C/W

Notes  through … are on page 8

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IRFP4242PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 300 ––– ––– V VGS = 0V, ID = 250µA
∆ΒVDSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 220 ––– mV/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– 49 59 mΩ VGS = 10V, ID = 33A e
VGS(th) Gate Threshold Voltage 3.0 ––– 5.0 V VDS = VGS, ID = 250µA
∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient ––– -15 ––– mV/°C
IDSS Drain-to-Source Leakage Current ––– ––– 5.0 µA VDS = 240V, VGS = 0V
––– ––– 150 VDS = 240V, VGS = 0V, TJ = 125°C
IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
gfs Forward Transconductance 78 ––– ––– S VDS = 25V, ID = 33A
Qg Total Gate Charge ––– 165 247 nC VDD = 150V, ID = 33A, VGS = 10V e
Qgd Gate-to-Drain Charge ––– 61 –––
td(on) Turn-On Delay Time ––– 40 ––– VDD = 150V, VGS = 10V e
tr Rise Time ––– 71 ––– ns ID = 33A
td(off) Turn-Off Delay Time ––– 72 ––– RG = 5.0Ω
tf Fall Time ––– 48 ––– See Fig. 22
tst Shoot Through Blocking Time 100 ––– ––– ns VDD = 240V, VGS = 15V, RG= 5.1Ω
L = 220nH, C= 0.4µF, VGS = 15V
––– 1960 –––
EPULSE Energy per Pulse µJ VDS = 240V, RG= 4.7Ω, TJ = 25°C
L = 220nH, C= 0.4µF, VGS = 15V
––– 3740 –––
VDS = 240V, RG= 4.7Ω, TJ = 100°C
Ciss Input Capacitance ––– 7370 ––– VGS = 0V
Coss Output Capacitance ––– 520 ––– pF VDS = 25V
Crss Reverse Transfer Capacitance ––– 220 ––– ƒ = 1.0MHz, See Fig.9
Coss eff. Effective Output Capacitance ––– 320 ––– VGS = 0V, VDS = 0V to 240V
LD Internal Drain Inductance ––– 5.0 ––– Between lead, D

nH 6mm (0.25in.)
G
LS Internal Source Inductance ––– 13 ––– from package
and center of die contact S

Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energyd ––– 700 mJ
EAR Repetitive Avalanche Energy c ––– 43 mJ
VDS(Avalanche) Repetitive Avalanche Voltagec 360 ––– V
IAS Avalanche Currentd ––– 33 A

Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
IS @ TC = 25°C Continuous Source Current ––– ––– 46 MOSFET symbol
(Body Diode) A showing the
ISM Pulsed Source Current ––– ––– 190 integral reverse
(Body Diode)c p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.0 V TJ = 25°C, IS = 33A, VGS = 0V e
trr Reverse Recovery Time ––– 300 450 ns TJ = 25°C, IF = 33A, VDD = 50V
Qrr Reverse Recovery Charge ––– 2330 3500 nC di/dt = 100A/µs e

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 IRFP4242PbF
1000 1000
VGS VGS
TOP 15V TOP 15V
10V 10V

ID, Drain-to-Source Current (A)

ID, Drain-to-Source Current (A)

8.0V 8.0V
BOTTOM 7.0V BOTTOM 7.0V

100 100
7.0V
7.0V

10 10

≤ 60µs PULSE WIDTH ≤ 60µs PULSE WIDTH

Tj = 25°C Tj = 175°C
1 1
0.1 1 10 100 0.1 1 10 100

VDS, Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

1000.0 3.5
ID = 33A

RDS(on) , Drain-to-Source On Resistance

VGS = 10V
3.0
ID, Drain-to-Source Current(Α)

100.0 2.5
TJ = 175°C
(Normalized)

2.0
TJ = 25°C

10.0
1.5

VDS = 30V 1.0

≤ 60µs PULSE WIDTH
1.0
0.5
4.0 5.0 6.0 7.0 8.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature (°C)

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance vs. Temperature

4000 4000
L = 220nH L = 220nH
3500 C = 0.4µF C = Variable
100°C 100°C
25°C 3000 25°C
Energy per pulse (µJ)

Energy per pulse (µJ)

3000

2500
2000
2000

1500
1000

1000

500 0
180 200 220 240 170 180 190 200 210 220 230 240 250

VDS, Drain-to -Source Voltage (V) ID, Peak Drain Current (A)
Fig 5. Typical EPULSE vs. Drain-to-Source Voltage Fig 6. Typical EPULSE vs. Drain Current
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 IRFP4242PbF
5000 1000.0
L = 220nH

ISD, Reverse Drain Current (A)

4000 C= 0.4µF
C= 0.3µF 100.0
Energy per pulse (µJ)

TJ = 175°C
C= 0.2µF
3000

10.0

2000

1.0 TJ = 25°C
1000

VGS = 0V
0 0.1
25 50 75 100 125 150 0.2 0.4 0.6 0.8 1.0 1.2
Temperature (°C) VSD, Source-to-Drain Voltage (V)
Fig 7. Typical EPULSE vs.Temperature Fig 8. Typical Source-Drain Diode Forward Voltage

12000 20
VGS = 0V, f = 1 MHZ ID= 33A
Ciss = Cgs + Cgd, Cds SHORTED

VGS, Gate-to-Source Voltage (V)

Crss = Cgd
VDS= 240V
10000
16 VDS= 150V
Coss = Cds + Cgd
VDS= 60V
C, Capacitance (pF)

8000 Ciss
12

6000
8
4000

4
2000
Coss
Crss 0
0
0 40 80 120 160 200 240 280
1 10 100 1000
QG Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)

Fig 9. Typical Capacitance vs.Drain-to-Source Voltage Fig 10. Typical Gate Charge vs.Gate-to-Source Voltage

48 1000
OPERATION IN THIS AREA
42
LIMITED BY R DS(on)
ID, Drain-to-Source Current (A)

36 100 1µsec
ID , Drain Current (A)

30

24 10 100µsec 10µsec

18

12 1
Tc = 25°C
6 Tj = 175°C
Single Pulse
0 0.1
25 50 75 100 125 150 175 1 10 100 1000
TC , CaseTemperature (°C) VDS , Drain-to-Source Voltage (V)

Fig 11. Maximum Drain Current vs. Case Temperature Fig 12. Maximum Safe Operating Area
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 IRFP4242PbF
3000
( Ω)
600

EAS, Single Pulse Avalanche Energy (mJ)

RDS (on), Drain-to -Source On Resistance m

ID = 33A I D
2500 TOP 4.9A
500 6.3A
BOTTOM 33A

400 2000

300 1500

200 1000
TJ = 125°C

100 500
TJ = 25°C

0 0
4.0 6.0 8.0 10.0 12.0 14.0 16.0 25 50 75 100 125 150 175
VGS, Gate-to-Source Voltage (V) Starting TJ , Junction Temperature (°C)

Fig 13. On-Resistance Vs. Gate Voltage Fig 14. Maximum Avalanche Energy Vs. Temperature
5.0 140
ton= 1µs
Duty cycle = 0.25
VGS(th) Gate threshold Voltage (V)

4.5 120
Half Sine Wave

Repetitive Peak Current (A)

Square Pulse
4.0 100
ID = 250µA

3.5 80

3.0 60

2.5 40

2.0 20

1.5 0
-75 -50 -25 0 25 50 75 100 125 150 175 25 50 75 100 125 150 175

TJ , Temperature ( °C ) Case Temperature (°C)

Fig 15. Threshold Voltage vs. Temperature Fig 16. Typical Repetitive peak Current vs.
Case temperature

D = 0.50
Thermal Response ( ZthJC )

0.1
0.20
0.10
R1 R2
0.05 R1 R2 Ri (°C/W) τi (sec)
0.01 τJ τC
0.02 τJ τ 0.1315 0.000555
0.01 τ1 τ2
τ1 τ2 0.2186 0.023373
Ci= τi/Ri
Ci i/Ri
0.001
Notes:
SINGLE PULSE
1. Duty Factor D = t1/t2
( THERMAL RESPONSE )
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006 1E-005 0.0001 0.001 0.01 0.1

t1 , Rectangular Pulse Duration (sec)

Fig 17. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRFP4242PbF
Driver Gate Drive
P.W.
D.U.T P.W.
Period D=
Period
+

VGS=10V *
ƒ Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
- • Low Leakage Inductance
D.U.T. ISD Waveform
Current Transformer
+
Reverse
‚ Recovery Body Diode Forward
-
„ + Current Current
- di/dt
D.U.T. VDS Waveform
Diode Recovery
 dv/dt
VDD

RG • di/dt controlled by RG VDD Re-Applied

• Driver same type as D.U.T. + Voltage Body Diode Forward Drop
• I SD controlled by Duty Factor "D" - Inductor Current
Inductor Curent
• D.U.T. - Device Under Test

Ripple ≤ 5% ISD

* VGS = 5V for Logic Level Devices

Fig 18. Diode Reverse Recovery Test Circuit for N-Channel HEXFET® Power MOSFETs

V(BR)DSS
15V
tp

L DRIVER
VDS

RG D.U.T +
V
- DD
IAS A
VGS
20V
tp 0.01Ω
I AS

Fig 19a. Unclamped Inductive Test Circuit Fig 19b. Unclamped Inductive Waveforms

Id
Vds

Vgs

L
VCC
DUT Vgs(th)
0
1K

Qgs1 Qgs2 Qgd Qgodr

Fig 20a. Gate Charge Test Circuit Fig 20b. Gate Charge Waveform

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 IRFP4242PbF

Fig 21a. tst and EPULSE Test Circuit Fig 21b. tst Test Waveforms

Fig 21c. EPULSE Test Waveforms

RD VDS
V DS
90%
V GS
D.U.T.
RG
+
-V DD
10%
VGS
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 % td(on) tr t d(off) tf

Fig 22a. Switching Time Test Circuit Fig 22b. Switching Time Waveforms

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IRFP4242PbF
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)

TO-247AC Part Marking Information

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TO-247AC package is not recommended for Surface Mount Application.

Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ Starting TJ = 25°C, L = 1.28mH,
RG = 25Ω, IAS = 33A.
ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%.
„ Rθ is measured at TJ of approximately 90°C.
… Half sine wave with duty cycle = 0.25, ton=1µsec.
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/

Data and specifications subject to change without notice.

This product has been designed for the Industrial market.
Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.09/2007
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