Carbon Nanotube: Synthesis and Application in Solar Cell
Carbon Nanotube: Synthesis and Application in Solar Cell
Carbon Nanotube: Synthesis and Application in Solar Cell
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the addition of carbon dimers (C2) to the CNT edges. Fig. 1 Growth mechanism of carbon nanotubes
Sometime CNTs are also prepared by flame synthesis using
camphor or mesh like structure [7].
In the arc discharge process the atmosphere of inert gas electrons as carriers are generated at high temperature
or some carbon containing gas is created by an arc dis- which creates nucleation point for the growth of nanotube.
charge between two carbon electrodes [8] with or without Carbon atoms are decomposed from methane gas and
catalyst. In the laser ablation technique, a high power laser deposited on the surface of Ni particle dissolved into bulk
beam impinges on a volume of carbon containing feedstock and form sub-stoichiometric nickel carbide at the early
gas. Laser ablation produces a small amount of clean stage. This carbide phase then decomposes into metallic
nanotubes [10], whereas arc discharge method generally nickel particle and outside graphite layers which encapsu-
produces large quantities of impure CNTs. late the host nickel particles. The metal particle is then
CVD results in MWNTs or poor quality SWNTs. The squeezed out by a strong pressure buildup due to the for-
SWNTs produced with CVD have a large diameter range. mation of graphite layer at the internal surface of graphite
envelope. This is possible because of the liquid like
1.3 Different Mechanism of Synthesis behavior of the metal due to melting point depression from
the dissolution of carbon atoms that remained in the bulk;
1.3.1 Growth Mechanism the fresh surface of the squeezed out Ni particle will further
decompose the methane and continues the growth of car-
Nanotubes are formed by a gas phase process which starts bon nanotube.
with evaporated gas from the source of carbon; gases will
be evaporated from a surface due to heating by laser pulses
or through heating by arcs or solar radioactive fluxes. Each 2 Different Synthesis Techniques
technique has common aspect and they have various pro-
posed mechanism for the formation of SWNT. 2.1 Arc-Discharge
Such process consists of three steps; firstly the formation
of a precursor consisting of some metal nanoparticles that In this method, under the inert atmosphere, carbon vapor is
provides the nucleation point at high temperatures then created by an arc discharge between two carbon electrodes
dissociation of gas takes place. Later the carbon atoms are [8] with or without catalyst. The arc discharge method
deposited on the nucleation point and the growth will start initially used for producing C60 fullerenes [9], is the most
in two ways: in root growth the catalyst will be placed at common and easiest way to produce carbon nanotubes.
the bottom of the tubes and in tip growth the catalyst will at However, these techniques produce a mixture of compo-
the top of the tubes (Fig. 1). nents and require splitting of nanotubes from the soot and
the catalytic metals present in the basic product.
1.3.2 Reaction Mechanism This method produces nanotubes through arc-vaporiza-
tion by two carbon rods [11] placed end to end with distance
Carbon nanotubes are also formed by reactions, in which at approximately 1 mm and the chamber is usually filled with
the hydrocarbon molecules are decomposed on free Ni, Co inert gas (helium/argon) at low pressure (between 50 and
metal surface, producing carbon atom with the simultane- 700 mbar). In recent investigations, it is found that produc-
ous evolution of molecular hydrogen. tion of carbon nanotubes in liquid nitrogen, deionized water
Growth of carbon nanotubes and nano-fibers are based and NaCl solution are also possible. A direct current of
on decomposition on supported Ni crystal by magneto 50–100 A driven by *20 V creates a high temperature
metric using methane. This is due to the reason that high discharge of 2000–3000 C between the two electrodes. The
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Table 1 Synthesis of carbon nanotubes by an arc discharge method under various conditions
Arc discharge Circumstances Product Remark Ref.
method
Arc discharge KCl/FeS catalyst under the atmosphere of Ar DWNT (double walled Large and high quality, diameter [12–16]
nanotubes) 2–6 nm
Mixture of catalyst using Co/Ni/Fe with Large length and diameter of
small quantity of S in the atmosphere of Ar 4–7 nm
Catalyst used FeS, CoS in the atmosphere of Bundles of high quantity
hydrogen nanotubes
Using graphite electrode in the atmosphere Optimization process
of hydrogen
Plasma rotating Pure graphite electrodes using hydrogen CNT Large scale of production [17]
arc discharge atmosphere
Liquid arc Deionized water MWNT, carbon onions, CNTs Metal filled inside the tubes [18–30]
discharge NaCl solution with electrodes in liquid MWNT, carbon nano capsules, Irregular morphology with
environment SWNT disordered shape
Toluene with using different catalyst Tube like and spheroid Continuous production of tubes
nanocarbon,
Y/Ni and CaC2 catalyst under the SWNT, fullerenes, SWNT High purity and high yield with
atmosphere of helium fibers, metallo-fullerenes, the diameter of 0.9–14 nm
CNTs
Using polymer such as PVA and PVA/Fe and MWNTs, sheet like structures, The type of product totally
various Fe sources spherical particles, beaded depends on the catalytic
CNTs composition
discharge vaporizes from one carbon rod and deposited on for swnt
for mwnt
the other rod. The yield of nanotubes depends on the uni- Power supply
Power supply
formity of the plasma arc and the temperature of the deposit
form on the carbon electrode. Synthesis of CNTs by the Inert
discharge method using different conditions is presented in Inert atmosphere atmosphere
Table 1. Cathode
The above table describes how the nanotubes were graphite rod
Cathode Anode With catalyst like Anode
formed by changing the surroundings of arc discharge graphite rod Co, Ni,
chamber and material used in the electrode. For high yield
and purity of CNTs, fullerenes etc. Y/N2 and CaC2 were
used under helium atmosphere. Carbon onions, MWNT
and CNTs were prepared by using the deionized water in
liquid arc discharge method. Fig. 2 Arc discharge method for synthesis of SWNT and MWNT
The nanotubes obtained during this process are usually
short in range with the diameter ranging from 0.6 to 1.4 nm
for single walled and 10 –14 nm for diameter multi-walled 2.2 Laser Ablation Method
nanotubes. These tubes can be single walled tubes or
multiple walled nanotubes, depending whether the catalyst A standard laser ablation process occurs in a tubular
is placed in rod or not. This method is relatively easy to furnace in which a block of graphite mixed with the
implement, and has yield of *30 %. The nanotubes pro- catalytic metals such as Ni, Co, Pt etc. is heated from 700
duced in such process having high impurity and large to 1500 K. The graphite block is then targeted with a high
defects, in comparisons with other method; and lengths of energy laser and argon (Ar) gas is pumped in the direc-
the tubes are somewhat random. tion of laser. As laser ablates the target, carbon nanotubes
Both the single walled nanotubes and multi walled are formed and carried by the gas flow into a cooled
nanotubes created by this method are to be decided by the copper collector.
synthesis process followed by the doping of Ni/Co in anode The mechanism for the formation of nanotube is same as
which yields the SWNT and the use of pure graphite rod the arc discharge in which the laser will penetrate the target
without any doping yields the MWNT (Fig. 2). material and the vapor of carbon is created inside the
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CO2 continuous SWNT bundles with bamboo like Laser power 400–900 W [31]
wave structure At room temperature
Ar atmosphere under 200–400 torr
SWNT bundles High temperature 1100 C with Ar and He atmosphere under 50–500 torr [32]
CO2 pulsed wave SWNTs Laser power 12-9-6 kW with Ar and N2 atmosphere 50–450 torr [33–35]
Pulsed Nd-YAG Thin SWNT Gas flow rate [36]
Laser SWNT bundles Laser intensity 532 nm, 1024 W [37]
Using catalyst C,Ni,Co under atmosphere of Ar
Furnace temp 800–1150 C
SWNT Laser intensity varies, furnace temperature 550 C and depends on gas [38]
flow rate and pressure
XeCl excimer SWNT bundles, fullerenes, Furnace temperature 1100–1350 C using catalyst C, Co, Ni under Ar [39]
atmosphere
KrF excimer MWNT, nano onions Target metals using composite of C/Co, C/Co/Ni in the atmosphere O2 [40]
and Ar at room temp
Carbon nano horns Using pure carbon in the atmosphere of Ar, Ne, He [41]
chamber which will grow on the cooled copper collector by 2.4 Precursor
growth mechanism. This process may not be easily
implemented, but high heating furnace is required for yield Carbon containing compounds have been used as precur-
up to 70 %. sors and the most common ones are: carbon monoxide
Table 2 describes the production of nanotubes by using (CO) [46, 50, 51], methane (CH4) [52], ethylene (C2H4)
different types of lasers with varied target materials and [48], acetylene (C2H2) [53], benzene (C6H6) [45], toluene
atmosphere. Power and intensity of laser source cause the (C7H8), ethanol (C2H5OH) [45], and methanol (CH3OH).
phenomenon of ablation which gives CNTs of different Each gas decomposes at different temperatures, cause to
diameters and lengths. grow nanotube. Sometimes rate of dissociation will be
controlled by the pressure of the gases such as CO, which
will dissociate more at high pressure and causes to increase
2.3 Chemical Vapor Deposition (CVD) Method the yield of nanotubes. The flow rate causes growth of
nanotubes; sometime larger nanotube will be formed at
A typical CVD process involves a substrate, which is slow flow rate in comparison to higher flow rate. Some-
exposed to one or more volatile precursors, placed in times carbon precursor also produces unwanted nanotubes
quartz tube and heated to desired growth temperature. by premixed gas in the cylinder, therefore, for producing
Carbon carrying gas is flowing through the quartz tube with well aligned or well controlled nanotubes, a gas filter or
predetermined flow rate and temperature. After growth sometimes cleaning gas is used in the CVD chamber.
mechanism the furnace is slowly cooled down and the
wafer is inspected for the nanotube growth. 2.5 Electrical Properties of CNTs
Table 3 describes the synthesis of CNTs by using dif-
ferent substrates in CVD chamber by the variation of Electrical property of carbon nanotube can be easily
temperature and carbon containing gases in which the understood from the band structure of graphene [54]. By
lowest growth is found at 650 C using CO2, but in this analyzing the band structure by zone folding approxima-
case the gas released is very toxic. To avoid the formation tion we found that the allowed k-points in the Brillouin
of toxic gases, methane gas is used for this synthesis which zone are confined to parallel lines. The band structure of
easily gets hydrolyzed. the graphene gives an idea of finding the model of nan-
These techniques were firstly used for silicon substrate otubes and its electronic energies along the allowed lines as
to grow single walled nanotubes [49]. The CVD process shown in Fig. 4 in which the subfigures (a) (b) and
[42, 48, 50, 51] has also gained the popularity for pure (c) represent the band structure of graphene, p-type and
SWNT growth (Fig. 3). n-type nanotubes respectively.
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Table 3 Synthesis of Carbon Nanotube by Chemical Vapor with different gases on various types of substrate
Precursor Carrier gas Temp. Flow rate Advantage Disadvantage Reference.
Si/SiO2 with CO with H2 900 C 1000 Sccm for both gases * Good growth is * Self deposition causes [42, 43]
some (30–70 %) achieved by adding amorphous carbon
catalyst like hydrogen deposited in quartz tube.
Fe * Efficient * Hazardous nature of CO
production of long so exhaust properly.
SWNT by fast * Metal impurity
heating technique destroying the flow rate
controller
Co either in C2H5OH 750 C without 450 Sccm for Ar 50 Sccm * Low temperature * Sometimes impurities [44, 45]
solution or with Ar H2 for H2 method for growing may be found as
in thin film and H2 gas 860 C with SWNT analyzed under Raman
form H2 * Ultra-long spectroscopy
nanotube and
* Multiple chiral
nanotubes are
found.
Silicon wafer CH4 with H2 940–980 C 2 sccm for CH4 and 4 * Low flow rate * High temperature [46, 47]
with Sccm for H2 required for the requires for growth
Mueller growth mechanism. mechanism
catalyst * Ultra long
Nanotube will be
obtained.
Si/SiO2 with Ethylene 750 C 150 Sccm for ethylene and * Ultra tall vertical * Defects may be created [48]
Fe catalyst with water 40 Sccm for Ar. forest of nanotube some time
vapor and Also cooled after growth is to found,
Ar gas with flow of Ar at 600 * Water will help the
Sccm and H2 at 400 self-cleaning and
Sccm increases the life
time
Desorption and
Volatile reaction
Desorption of
precursor
Transport to
surface
The length and orientation of these lines are determined the parameters can turn CNTs from metallic to semicon-
by the (n, m) pair of integers. Although this approximation ducting state.
also provides us many useful details about the electrical Each graphite structure has carbon, which contains two
properties of carbon nanotubes and a slight difference in 1s electron, one 2p electron and three sp2 electron [55]. The
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three sp2 electrons form three bonds in the band at the 3 Functionalization of CNTs
plane of graphene sheet, leaving an unsaturated p-orbital.
This p-orbital, perpendicular to the graphene thus the CNTs have inert surface property, but they are generally
nanotube surface, forms a delocalized p-network across the insoluble in solvent because of strong Vander Wall inter-
nanotube responsible for the electronic property. Armchair action that tightly holds them together forming bundles.
CNTs should show metallic behavior having band degen- For many other applications, the solubility will increase by
eracy between highest p valance band to lowest p con- some modification called functionalization. The function-
duction band. The point at which these bands meet, is alization method will be categorized into two following
known as Fermi level and a new type of CNT i.e. metallic major groups:
nanotube is formed. The conduction of metallic CNTs is
ballistic and least sensitive towards gate voltage. Semi-
conducting nanotube with small band gap is useful for 3.1 Inside Functionalization (Endohedral)
transistor and sensor applications (Fig. 4).
In this, nanoparticles of different materials are filled inside
2.6 Chemical Properties of CNTs the nanotubes for functionalization, which can be achieved
by spontaneous penetration of exploiting the situation
According to band structure nanotubes are bonded where nanotubes are filled with colloidal suspensions. This
according to sp2 hybridization so the pyram-idalization process followed by the capillary action of the tubes; or by
angle Hp is 0. Hamon et al. [56] and Niyogi et al. [57] wet chemistry, when the nanotubes are filled with some
observed that the angle of pyramidalization of a carbon compounds, they will react at a particular temperature and
atom is not 0 but it is 11.6 at the end caps, which is very pressure after several circumstances resulting nanoparticle
close to tetrahedral. But the angle of pyramidalization of which are trapped inside the nanotube [67, 68].
sidewalls of nanotube is 6 due to this finite value, the
tubular nanotube introduces strain. p-orbital mismatchs the
strain present in nanotube [58]. The end cap [59] has large 3.2 Chemical Functionalization From Outside
reactivity because it has a large pyramidalization angle and (Exohedral)
low reactivity for side walls [60] due to low pyramidal-
ization angle. This group can also be subdivided into three subgroups
Defect in nanotube may arise during the synthesis pro- based on the mechanism of attachment in which the dif-
cess due to the presence of stone walls like structural defect ferent groups or compounds are attached to the sidewall of
[61–63] builds sp3 character on the hexagonal network of the nanotube:
tubular nanostructures. Defects will increase the reactivity (i) Covalent functionalization in which the func-
of nanotubes thus the gases will adsorb on the surface so tionalization group is attached either on the
the rate of functionalization will be increased [64–66]. defect side or at the end of the tubes [69, 70].
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123
123
Table 4 Functionalization of carbon nanotubes by various methods
Functionalization type Mechanism Advantage Disadvantage Area of application Ref.
Exohedral functionalization
Covalent functionalization
Sidewall functionalization Cyclo and nucleophilic addition radical * Production of stable functionalized * Destruction and * Chemical sensors [69, 70]
reactions CNTs shortening of carbon * LED
* Easily dispersed in chemical solvent nanotube which
* Solar cell
with a high degree of disintegrate the chemical
and physical property * Transistor
functionalization
Defect or end functionalization Oxidation of carbon nanotubes e.g. * Easily produced and simply dispersed * Having small surface area * Chemical sensors [71, 72]
carboxyl functionalization in polar solvents with some destructed * LED
network
* Solar cell
* Transistor
Non covalent functionalization Vander wall interaction in which CNTs * Electronic, chemical property and * Unstable nanotubes will * CNT based polymer [73, 74]
are wrapped with polymers length of tubes will not be affected found and dispersibility in composite used in
covalent solution is low aerospace
* CNT based biomolecule
composite used in
biosensors
Endohedral functionalization Wet chemistry in which materials are * Structure is preserved and length is * Outer surface remains * Hydrogen storage [67, 68]
filled inside the tube by capillary also not affected unusual materials
action * Drug delivery system
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CdTe/CdS Evaporation sublimation, screen 30 %/16 % Controversial Good stability, Toxicity of [76]
printing technique high module Cd,
efficiency availability of
Te
CuIn (G)- Evaporation, sputter deposition, 28–30 %/20 % Homo- Good stability Multiple [77]
Se(S) electroplating, spray deposition junction binary
phase,
cell to cell
mismatch
CZTS(Se) PVD, sputtering, spray pyrolysis, 30 %/9.6 % Direct Band Abundant, Mixed [78]
screen printing gap 1.4- cheap, green phases,
1.6 eV material difficult to
synthesize
PEC using PVD, sputtering, 30 %/upto 12 % Direct band Lighter, flexible Difficult to [79]
dyed TiO2/ Electroplating gap manufacture
TCO
CNT based CVD, sputtering, electroplating More than 30 %/16 % Direct band Lighter, Costly [80]
gap flexible,
highly
efficient
Light
Ag
containing SWCNTs have so far suffered from limited
MoOx current and voltage, and therefore poor power-conversion
ZnO, NW
ITO efficiencies [75].
s-MWCNTs
Glass
7 Conclusion
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9. B.C. Yadav, R. Kumar, Int J Nanotechnol App 2(1), 15–24 41. A.A. Gorbunov, R. Friedlein, O. Jost, M.S. Golden, J. Fink, W.
(2008) Pompe, Appl. Phys. A (Suppl.) 69, S593–S596 (1999)
10. P.G. Collins, P. Avouris, Sci. Am. 283(6), 62–69 (2000) 42. J. Liu, Abstr Pap Am Chem Soc 227, U273–U273 (2004)
11. C. Journet, W.K. Maser, P. Bernier, A. Loiseau, M. Lamy de la 43. J.H. Hafner, Chem. Phys. Lett. 296(1–2), 195–202 (1998)
Chapelle, S. Lefrant, P. Deniard, R. Lee, J.E. Fischer, Nature 388, 44. S. Maruyama, Chem. Phys. Lett. 360(3–4), 229–234 (2002)
756 (1997) 45. L.M. Huang, J Phys Chem B 110(23), 11103–11109 (2006)
12. H. Qiu, Z. Shi, L. Guan, L. Lou, M. Gao, S. Zhang, J. Qiu, Z. Gu, 46. A.M. Cassell, J of Phys Chem B 103(31), 6484–6492 (1999)
Carbon 44, 516–521 (2006) 47. Z. Jin, Nano Lett. 7(7), 2073–2079 (2007)
13. J.L. Hutchison, N.A. Kiselev, E.P. Krinichnaya, A.V. Krestinin, 48. K., Hata, Science 306(5700), 1362–1364 (2004)
R.O. Loutfy, A.P. Morawsky, V.E. Muradyan, E.D. Obraztsova, 49. H.J. Dai, Carb Nanotub 80, 29–53 (2001)
J. Sloan, S.V. Terekhov, D.N. Zakharov, Carbon 39, 761–770 50. C.G. Lu, J. Liu, J Phys Chem B 110(41), 20254–20257 (2006)
(2001) 51. B. Zheng, Nano Lett. 2(8), 895–898 (2002)
14. Y. Saito, T. Nakahira, S. Uemura, J. Phys. Chem. B 107, 931–934 52. S.P. Patole, EPL 81(3), 6 (2008)
(2003) 53. Q.H. Yang, Chem. Phys. Lett. 370(1–2), 274–279 (2003)
15. H. Huang, H. Kajiura, S. Tsutsui, Y. Murakami, M. Ata, J. Phys. 54. P. Avouris, Acc. Chem. Res. 35, 1026–1034 (2002)
Chem. B 107, 8794–8798 (2003) 55. R. Saito, G. Dresselhaus, M.S. Dresselhaus, Imperial College
16. M. Cadek, R. Murphy, B. McCarthy, A. Drury, B. Lahr, R.C. Press, 1998
Barklie and M.in het Panhuis, J.N. Coleman, W.J. Blau. Carbon 56. M.A. Hamon, M.E. Itkis, S. Niyogi, T. Alvaraez, C. Kuper, M.
40, 923–928 (2002) Menon, R.C. Haddon, J. Am. Chem. Soc. 123, 11292–11293
17. S.J. Lee, H.K. Baik, J. Yoo, J.H. Han, Diamond Rel. Mat. 11, (2001)
914–917 (2002) 57. S. Niyogi, M.A. Hamon, H. Hu, B. Zhao, P. Bhowmik, R. Sen,
18. H.W. Zhu, X.S. Li, B. Jiang, C.L. Xu, Y.F. Zhu, D.H. Wu, X.H. M.E. Itkis, R.C. Haddon, Acc. Chem. Res. 35, 1105–1113 (2002)
Chen, Chem. Phys. Lett. 366, 664–669 (2002) 58. R.C. Haddon, J. Am. Chem. Soc. 112, 3385–3389 (1990)
19. H. Lange, M. Sioda, A. Huczko, Y.Q. Zhu, H.W. Kroto, D.R.M. 59. R.C. Haddon, L.E. Brus, K. Raghavachari, Chem. Phys. Lett.
Walton, Carbon 41, 1617–1623 (2003) 125, 459–464 (1986)
20. Y.L. Hwang, K.C. Chen, F.R. Kai, Adv. Mat. 13, 830–833 (2001) 60. A. Thess, R. Lee, P. Nikolaev, H. Dai, P. Petit, J. Robert, C. Xu,
21. S.D. Wang, M.H. Chang, K.M.D. Lan, Ch-Ch. Wu, J.J. Cheng Y.H. Lee, S.G. Kim, A.G. Rinzler, D.T. Colbert, G.E. Scuseria,
and H.K. Chang. Carbon 43, 1778–1814 (2005) D. Tomanek, J.E. Fischer, R.E. Smalley, Science 273, 483–487
22. M.V. Antisari, R. Marazzi, R. Krsmanovic, Carbon 41, (1996)
2393–2401 (2003) 61. D. Orlikowski, M.B. Nardelli, J. Bernholc, C. Roland, Phys. Rev.
23. N. Sano, J. Nakano, T. Kanki, Carbon 42, 686–688 (2004) B 61, 14194–14203 (2000)
24. T. Okada, T. Kaneko, R. Hatakeyama, Thin Solid Films 515, 62. J.C. Charlier, Acc. Chem. Res. 35, 1063–1069 (2002)
4262–4265 (2007) 63. J.C. Charlier, T.W. Ebbesen, Ph Lambin, Phys. Rev. B 53,
25. M. Ishigami, J. Cumings, A. Zettl, S. Chen, Chem. Phys. Lett. 11108–11113 (1996)
319, 457–459 (2000) 64. H. Terrones, M. Terrones, E. Hernández, N. Grobert, J.-C.
26. Z. Shi, Y. Lian, F.H. Liao, X. Zhou, Z. Gu, Y. Zhang, S. Iijima, Charlier, P.M. Ajayan, Phys. Rev. Lett. 84, 1716–1719 (2000)
H. Li, K.T. Yue, S.L. Zhang, J. Phys. Chem. Solid 61, 1031–1036 65. L.A. Chernozatonski, Chem. Phys. Lett. 297, 257–260 (1998)
(2000) 66. F. Mercuri, A. Sgamellotti, Inorg. Chem. Acta 360, 785–793 (2007)
27. H.J. Li, L.H. Guan, Z.J. Shi, Z.N. Gu, J. Phys. Chem. B 108, 67. E. Dujardin, T.W. Ebbesen, H. Hiura, K. Tanigaki, Science 265,
4573–4575 (2004) 1850–1852 (1994)
28. M. Yao, B. Liu, Y. Zou, L. Wang, D. Li, T. Cui, G. Zou, B. 68. A.H. Angew, Chem. Int. Ed. 41, 1853–1859 (2002)
Sundqvist, Carbon 43, 2894–2901 (2005) 69. J.M. Simmons, B.M. Nichols, S.E. Baker, S. Marcus, Matthew,
29. Y.H. Wang, SCh. Chiu, K.M. Lin, Y.Y. Li, Carbon 42, O.M. Castellini, C.S. Lee, R.J. Hamers, M.A. Eriksson. J. Phys.
2535–2541 (2004) Chem. B 110, 7113–7118 (2006)
30. A. Szabó, C. Perri, A. Csató, G. Giordano, D. Vuono, J.B. Nagy, 70. S.C. Lim, C.S. Jo, H.J. Jeong, Y.M. Shin, Y.H. Lee, I.A.
Materials 3, 3092–3140 (2010) Samayoa, J. Choi, Appl. Phys. 41, 5635–5639 (2002)
31. H. Zhang, Y. Ding, Ch. Wu, Y. Chen, Y. Zhu, Y. He, Y. Zhong, 71. M.A. Herranz, N. Martin, S. Campidelli, M. Prato, G. Brehm,
Physica. B 325, 224–229 (2003) D.M. Guldi, Controlover. Angew. Chem. Int. Ed. 45, 4478–4482
32. E. Muñoz, W.K. Maser, A.M. Benito, M.T. Martinez, G.F. Fuente (2006)
de la, Y. Maniette, A.; Righi, E. Anglaret and J.L. Sauvajol. 72. X. Guo, J.P. Small, J.E. Klare, Y. Wang, M.S. Purewal, I.W.
Carbon 38, 1445–1451 (2000) Tam, B.H. Hong, R. Caldwell, L. Huang, S.O. Brien, J. Yan, R.
33. S. Bandow, S. Asaka, Y.A.M. Rao, L. Grigorian, E. Richter, P.C. Breslow, S.J. Wind, J. Hone, P. Kim, C. Nuckolls, Science 311,
Eklund, Phys. Rev. Lett. 80, 3779–3782 (1998) 356–359 (2006)
34. W.K. Maser, E. Muñoz, M.T. Martnı́ez, A.M. Benito, Fuente de 73. C. Klumpp, K. Kostarelos, M. Prato, A. Bianco, Biochim. Bio-
la. Opt. Mater. 17, 331–334 (2001) phys. Acta Bio memb 1758, 404–412 (2006)
35. M. Yudasaka, F. Kokai, K. Takahashi, R. Yamada, N. Sensui, T. 74. D. Tasis, N. Tagmatarchis, A. Bianco, M. Prato, Chem. Rev. 106,
Ichihashi, S. Iijima, J. Phys. Chem. B 103, 3576–3581 (1999) 1105–1136 (2006)
36. H. Kataura, Y. Kumazawa, Y. Maniwa, Y. Ohtsuka, R. Sen, S. 75. B.J. Kim, S.H. Han, J.S. Park, Surf. Coat. Technol. 271, 22–26
Suzuki, Y. Achiba, Carbon 38, 1691–1697 (2000) (2015)
37. W.K. Maser, A.M. Benito, E. Muñoz, G.M. de Val, M.T. Mar- 76. X. Mathew, J.P. Enriquez, A. Romeo, A.N. Tiwari, Sol. Energy
tınez, A.L. Fuente, de la. Nanotechnology 12, 147–151 (2001) 77, 831–838 (2004)
38. T. Azami, D. Kasuya, T. Yoshitake, Y. Kubo, M. Yudasaka, T. 77. B. Marsen, H. Wilhelm, L. Steinkopf, S. Klemz, T. Untold, R.
Ichihashi, S. Iijima, Carbon 45, 1364–1367 (2007) Scheer, H.-W. Schock, Thin solid film 519, 7224–7227 (2011)
39. M. Kusaba, Y. Tsunawaki, Thin Solid Films 506, 1–754 (2006) 78. H. Katagiri, K. Imbo, W. Shwemaw, K. Oishi, M. Yamazaki, H.
40. G. Radhakrishnan, P.M. Adams, L.S. Bernstein, Thin Solid Films Araki, A. Takeuchi, Thin. Film. Chalogenide. Photovolt. mater.
515, 1142–1146 (2006) 517(7), 2455–2460 (2009)
123
J Inorg Organomet Polym
79. K. Shin, J.B. Yoo, H. Park, J. Power Sources 225, 263–268 nanotubes formed at a liquid–liquid interface. Langmuir 29,
(2013) 7195–7202 (2013)
80. E. Shi, L. Zhang, Z. Li, P. Li, Y. Shang, Y. Jia, J. Wei, K. Wang, 83. L.K. Shrestha, Y. Yamauchi, J.P. Hill, K. Miyazawa, K. Ariga, J.
H. Zhu, D. Wu, S. Zhang, Anyuan Cao. Nature. (2012). doi:10. Am. Chem. Soc. 135, 586–589 (2013)
1038/srep00884 84. R.G. Shrestha, L.K. Shrestha, A.H. Khan, G.S. Kumar, S.
81. B.C. Yadav, P. Kumar, S. Singh, R. Kothari, Development in Acharya, K. Ariga, Appl. Mater. Interfaces 6, 15597–15603
Metal Oxide Nanomaterial-based Solar Cells. Emerg Energy (2014)
Alternatives Sustainable Environ, Chapter 23, 1–17 (2015)
82. L.K. Shrestha, J.P. Hill, T. Tsuruoka, K. Miyazawa, K. Ariga,
Surfactant-assisted assembly of fullerene (C60) nanorods and
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