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MT6166 RF Technical Brief

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MT6166 RF System
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Technical Brief
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Version: 0.1
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Release date/Status: Draft


Editor: Chih-Chun Tang

© 2012 MediaTek Inc.


This document contains information that is proprietary to MediaTek Inc.

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1 Introduction

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1.1 Overview

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The MT6166 is a RF transceiver targeted at high speed 2G/3G-FDD/TDD multi-mode smart phone
and tablet computers implanted in 40nm CMOS. The RF transceiver function is fully integrated. This
document briefly introduces the RF macros in MT6166.

m TI
1.2 Key features

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 Full multi-mode RF solution (GGE/WCDMA/TDSCDMA) through to 3GPP Release 8 (HSPA+)
o 21.1Mbps peak DL (Cat. 24: 64QAM)
o 11.5Mbps peak UL (Cat. 7: 16QAM)
o SAW-less Quad-band support in GGE mode (GSM850/900/1800/1900)


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o 3G-FDD bands support: Band 1,2,5,8.
o 3G-TDSCDMA bands support: Band 34,39,40.
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Direct Conversion (3G), Two Point Modulation (TPM) for GMSK and Small Signal Polar for 8-
PSK
o No external SAW filters required for transmitter (WCDMA//GGE)
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o Dedicated power detection circuits for power control over specific power range

 Hybrid Direct-Conversion (3G) / Low-IF (GGE, DC-HSDPA) receiver


o No external SAW filters required for receiver (GGE)
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 Low supply current & operation directly from DC-DC converter


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 26MHz internal DCXO or external VCTCXO operation (with integrated AFC DAC)
o Three low noise additional Clock Drivers for clocking connectivity / peripheral IC’s
o Ultra Low power 32KHz mode
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 Support RF Calibration features for key Rx and Tx specifications (Image rejection, LO


feedthrough, DC offset)
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 Temperature Measurement sub-system


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MT6166 RF Technical Brief
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2 Block Diagram and Application Diagram

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Figure 1: RFSYS Block Diagram

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MT6166 System Block Diagram

Programmable
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Band1 LNA_1P

LPF
Band support: LNA ½
LNA_1N
GSM850/GSM900/DCS/PCS

TTG buf
FDD B1/B2/B5/B8

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TDD B34/B39 Band8 LNA_2P
LNA ¼ RX_BBIP
LNA_2N RX_BBIN

TTG buf
DAC

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Band2 LNA_3P
LNA ½ DAC
LNA_3N

TTG buf
RX_BBQP
RX_BBQN
Band5 LNA_4P

TIA
LNA ¼
LNA_4N

.co EN TTG buf

DCOC &

Engine
RC Cal
Digital
WEDGE TXM (SP8T)

TDD B40

LNA_5N
LNA_5P

R Cal
½ RCAL

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LNA
ANT

TTG buf
GSM850/GSM900 LNA_6P
LNA ¼
LNA_6N

TTG buf
LB

TDD TX LO
@ F

RX LO
HB LNA_7P
LNA ½
Controller DCS/PCS/B34/B39 LNA_7N TTG buf

RX LO
ng ON

VBAT
TTG OUT1
TTG OUT2

2. 26MHz to TXDYN and TX

SRX
CLK_SEL
TXEN
VRAMP
1.416MHz to DAC

CLK4

TTG/CKG
3.RF Test tone

VCONT1
det ADC

VCONT2 CLK3
VCONT3
REFCLK

EN_BB
VCONT4 CLK2
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CLK1

XTAL1 DCXO_32KEN
TX Det. LO
DCXO
DCXO [26MHz]

CDAC/CAFC

DCXO_32K
Divider
TX LO
fa. K

XTAL2 SDM

XMODE
VCC_PA PA_bias
& TPM

VRF18
STX

WCDMA
Test Mux
Global
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Bias
LDO

PA Module VXODIG
VIO18
B1
PDET VTCXO28
VMODE
PAEN
Registers
Interface
Control

BANDSEL
VCC_PA PA_bias
POR
Sh IA

WCDMA TMEAS
TXBPI
Mux
TX_PDET

TX DYN

PA Module
ADC

B2 BSI [4:0]
PDET
VMODE TX_HB1
PAEN TX_BBIP
TX_BBIN
BANDSEL
Mux

8-PSK AM Path
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TX2_HB2
DAC

1/2

VCC_PA PA_bias
TX3_HB3
TX LO

1/4
LBSEL

WCDMA
PA Module

B5
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PDET TX_LB1
VMODE
PAEN
Mux

BANDSEL TX_LB2
TX_BBQP
VCC_PA PA_bias TX_BBQN

WCDMA
PA Module

B8
PDET
VMODE
PAEN
BANDSEL

Figure 2 : Applications Diagram

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3 General Specifications

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3.1 Packaging

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Wirebond TFBGA is currently considered for this product.

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Parameter Single die
Die thickness 6mil

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Bond Wire Diameter [Cu] 0.7mil
Body Size 4.6x4.6mm
Ball Spacing 0.4mm

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Ball number @ F 11x11
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3.2 RF I/O List

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Ball Name

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Category GPIO/RF Description
Name I/O
Pin

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HB_RXP I RF 2G RX HB/TDD B34/39 input
HB_RXN I RF 2G RX HB/TDD B34/39 input

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LB_RXP I RF 2G RX LB input
LB_RXN I RF 2G RX LB input
RFIN_B1 I RF 3G band 1 RX input

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RFIP_B1 I RF 3G band 1 RX input
RFIN_B5 I RF 3G band 5 RX input
RFIP_B5 I RF 3G band 5 RX input

RF I/O
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RFIN_B2
RFIP_B2
RFIN_B8
I
I
I
RF
RF
RF
3G band 2 RX input
3G band 2 RX input
3G band 8 RX input
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RFIP_B8 I RF 3G band 8 RX input
ng ON

B40_RXP I RF TDSCDMA Band 40 RX input


B40_RXN I RF TDSCDMA Band 40 RX input
2GHB_TX O RF 2G HB TX output
3GH1_TX O RF 3G HB TX output 1
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3GH2_TX O RF 3G HB TX output 2
3GL5_TX O RF 3G LB TX output
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2GLB_TX O RF 2G LB TX output
DET I RF TX detection path input
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3GTX_IP I RF TX I+ input from 3G DAC


3GTX_IN I RF TX I- input from 3G DAC
3GTX_QP I RF TX Q+ input from 3G DAC
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3GTX_QN I RF TX Q- input from 3G DAC

RX_IP O RF RX I+ ouput to 2G/3G ADC


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BB I/O RX_IN O RF RX I- ouput to 2G/3G ADC

RX_QP O RF RX Q+ ouput to 2G/3G ADC


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RX_QN O RF RX Q- ouput to 2G/3G ADC


External temperature
TMEAS I RF
measurement input
TXBPI O GPIO 3G TX DCOC sign bit
BSI_CLK/SCAN_CLK I GPIO 3-wire CLK / ATPG CLK
BSI Interface
BSI_EN/SCAN_EN I GPIO 3-wire enable / ATPG enable

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3-wire data/2G data / ATPG

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BSI_DATA0/SCAN_IN IO GPIO
input
3-wire data/2G data / ATPG

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BSI_DATA1/SCAN_OUT IO GPIO
output
BSI_DATA2 IO GPIO 3-wire data/2G data

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XTAL1 I RF XO input

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XO input or AFCDAC voltage
XTAL2/AFCDAC IO RF
output
26MHz output clock 4
XO4 O RF

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(PMIC/Audio)
Sine-26MHz output clock 3
XO3 O RF
(ATV/NFC)
XO2 O RF 26MHz output clock 2 (CON)

TCVCXO/DCXO
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XO1

XMODE
O

I
RF

RF
26MHz output clock 1 (BB/AP)
DCXO(=1)/VCTCXO(=0)
selection.
@ F
XO output buffer (for co-clock)
CLK_SEL I RF
ng ON

enable
32KHz function enable (with
32K_EN I RF 32KHz XO, EN=0; without 32KHz
XO, EN=1)
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OUT32K O RF 32KHz output

Enable 26MHz clock buffer to


fa. K

EN_BB I RF DBB. Also to be the enable of


global static macro.
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TST1 O RF Test output 1


Test / RCAL
TST2 O RF Test output 2
Ports
RCAL O RF R-calibration
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RXVCO_MON O RF Monitor port for RFVCO.


VCO Mon
TXVCO_MON O RF Monitor port for TX VCO.
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For TX Pdet GND (50-ohm R


DETGND GND RF
GND)
VRXHF VDD RF 1.8V RX power supply1 (VRF18)
1.8V DC-DC power supply
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AVDD_VIO18 VDD RF
(=VGPIO, only for GPIO supply)
Voltage Supply
For DCXO digital and GS supply,
/GND
connect to VTCXO28 with 32k-
VXODIG VDD RF removal, connect to VIO18 for
normal operation. (=VIO18 in
original plan)
VTCXO28 VDD RF 2.8V LDO XO power supply and

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1.8V RX power supply2 (VRF18)
VRXLF VDD RF

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and TTG/CKG

VTXLF VDD RF 1.8V TX power supply 2 (VRF18)

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VTXHF VDD RF 1.8V TX power supply 1 (VRF18)

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For ESD and TX some blocks
V28 VDD RF
supply

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3.3 Ball Assignment

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1 2 3 4 5 6 7 8 9 10 11

A B40_RXP 3GB1_RXP 3GB1_RXN 3GB2_RXP 3GB8_RXP 3GH1_TX 3GH2_TX 3GL5_TX 2GLB_TX A

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B B40_RXN 3GB5_RXP 3GB5_RXN 3GB2_RXN 3GB8_RXN GND 2GHB_TX GND VTXHF B

C LB_RXP GND GND GND GND GND GND GND GND GND TMEAS C
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D D
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LB_RXN GND GND GND GND GND GND GND DETGND DET

E HB_RXP GND GND GND GND GND GND GND V28 E


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F HB_RXN VRXHF GND GND GND GND BSI_DATA0 GND 3GTX_QP 3GTX_QN F

RFVCO_MO
G 32K_EN GND GND BSI_EN BSI_DATA2 GND 3GTX_IP 3GTX_IN G
R ED

H XTAL2 GND GND BSI_CLK BSI_DATA1 GND TXBPI H


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J XTAL1 GND GND GND GND GND GND GND GND RCAL VTXLF J

AVDD_VIO
K VTCXO28 CLK_SEL XO2 XO4 OUT32K VXODIG RX_IN RX_QN RX_QP TST2 K
18

TXVCO_MO
L EN_BB XO3 XO1 XMODE VRXLF RX_IP TST1 L
N

1 2 3 4 5 6 7 8 9 10 11

Figure 3 Bond Out

Version 1.2 (draft) © MediaTek Inc. 2013-02-08 Page 9 of 26

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3.4 Operating Conditions

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Within the operating range the IC operates as per the functional description.

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Parameter Conditions Min Nom Max Unit
Supply VIO18 Normal functional modes 1.7 1.8 1.9 V
Linear Supply VTCXO28 2.7 2.8 2.9 V

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Supply VXODIG Normal function mode Connects to VIO18
Supply VXODIG 32K-less mode Connects to VTCXO28
Supply VXODIG
fa. K ATPG mode – LDO’s bypassed in this mode 1.1 1.2 1.4 V
Ambient Temperature Note 1 -40 85 ºC
Junction Temperature Functional – see section [3.9] -40 125 ºC
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Receiver Front End
RX input frequency range See Receiver Section for detailed frequency ranges
Rx required amplitude balance All Rx input pairs -1 +1 dB
Rx required phase balance All Rx input pairs -10 +10 deg
Sh IA

Transmitter
Tx Frequency Range See Transmitter Section for detailed frequency ranges
Tx O/P VSWR All Phases ZL = 50Ω 2:1
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Reference Clock Input (VCTCXO)


Reference Clock Frequency 26.0 MHz
Reference Clock Input Voltage Swing AC coupled at input pin 700 1500 mVpp
Duty Cycle 40 60 %
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@ Foffset = 100Hz <-103 -100 dBc/Hz


@ Foffset = 1KHz <-133 -130 dBc/Hz
@ Foffset = 10KHz <-147 -144 dBc/Hz
Phase Noise – note 2 @ Foffset = 100KHz <-149 -146 dBc/Hz
HD2 @ 52MHz -8 dBc
HD3 @ 78MHz -10 dBc
Harmonic Content HD4 @ 104MHz -20 dBc
Start-up time |Δf|<1ppm to >90% of final amplitude 3 ms
Crystal Requirements

Version 1.2 (draft) © MediaTek Inc. 2013-02-08 Page 10 of 26

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2 Crystal types are supported (Crystal #1 3225 body size / Crystal #2 2520 body size)
Crystal #1 7.5 pF

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Nominal Load Capacitance Crystal #2 7.0 pF
Initial Frequency error ±10 Ppm

ng ON
ESR 30 
Drive level 100 μW
Crystal #1 -10% 32 +10% ppm/pF
Pull ability Crystal #2 -10% 27 +10% ppm/pF

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Note 1

The supportable ambient temperature range will depend on the thermal impedance of the package used and the exact operational state as well as the end
fa. K
application thermal design (housing, PCB etc).
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Junction temperature is a more reliable indication of the actual operational range.

Note 2

The input clock requirement specified is defined to meet receiver and transmitter phase noise requirements e.g. IC EVM specification. Certain connectivity
Sh IA

requirements may require better specifications than this. The clock source (non DCXO mode) can either be an external VCTCXO/VCXO module or
alternatively another transceiver clock buffer when considering multiple transceiver applications.
R ED

n
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Version 1.2 (draft) © MediaTek Inc. 2013-02-08 Page 11 of 26

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4 Reference Clock Specification

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The Reference Clock sub-system is shown in the figure below.

This integrates a core 26MHz XTAL oscillator (DCXO), AFCDAC and a 32KHz low power mode. Also all the clock buffers external and internal are integrated
in this system.

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The mode of operation (internal DCXO or external VCTCXO) is selected via the input XMODE from the baseband with the following function

CLK_MODE
fa. K Mode
LOW External CLK (VCTCXO)
HIGH DCXO
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In Crystal mode the XTAL is connected directly between XO1 and XO2.

In VCTCXO mode XO2 pin is reconfigured to be the AFCDAC output and XO1 the VCTCXO clock input pin.
Sh IA

Since the state of XMODE is latched into the module then the baseband configuration can take place using a pin state “trapping” scheme on power up if
desired.
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Version 1.2 (draft) © MediaTek Inc. 2013-02-08 Page 12 of 26

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ALWAYS
ON
VCTCXO and no 32KHz elimination

@ F
VIO domain VIO18_RF_ONLY

ng ON
1.8V

MDM 26MHz
Enable
LDO LDO VTCXO28 domain VTCXO28
PMIC

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DCXO
RF DCXO DCXO
GS Digital
fa. K Core
AFC
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VTCXO
Sh IA

ALWAYS
R ED

ON
XTAL with 32KHz eliminated

VIO domain 2.8V V28


FO M

MDM 26MHz
Enable
LDO LDO VTCXO28 domain
PMIC
DCXO
RF DCXO DCXO
GS Digital Core
AFC

XTAL

Version 1.2 (draft) © MediaTek Inc. 2013-02-08 Page 13 of 26

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4.1 External Clock Buffers

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Our plan for 26MHz external clock buffer are

ng ON
CLK1 – to Baseband
CLK2 – to WCN
CLK3 – ATV/NFC
CLK4 – Audio

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Following is MT6166 DCXO control table.
fa. K
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4.2 32KHz Mode


st
In low power mode a 32KHz clock is produced by using a fractional-N divider (1 order Sigma Delta Modulated) to replace the normal 32KHz XTAL
(watchdog). In this mode the CDAC and CAFC capacitance is minimized so that the XTAL core can operate from a significantly reduced bias current).

Version 1.2 (draft) © MediaTek Inc. 2013-02-08 Page 14 of 26

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4.3 Reference Clock Supply Current

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The DCXO clock system has a large number of modes. The approximate current breakdown is shown below for typical conditions. This does not include the
AFCDAC for VCTCXO mode.

ng ON
Mode Current Breakdown Total Current
LPM (Low Power Mode) for 32KHz operation 100μA 100μA
FPM (Full Power Mode) for 26MHz operation including baseband clock buffer 1mA 1mA

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Delta current for Global Static Clock Buffer 75μA 75μA
Delta Current TTG Clock Buffer
fa. K 100μA 100μA
Delta Current CLKG Clock Buffer 225μA 225μA
Delta Current STX Clock Buffer 225μA 225μA
an TE
Delta Current SRX Clock Buffer 250μA 250μA
Total Current FPM+CLKG+STX+SRX 1mA+0.225mA+0.225mA+0.25mA 1.7mA
External Clock Buffer Cload=20pF 1mA 1mA
Sh IA

1mA+0.225mA+0.225mA+0.075mA 4.875mA
FPM + 3x external clock buffer + CLKG+STX+SRX+TTG+GS
+0.1mA+0.25mA+3mA
R ED
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Version 1.2 (draft) © MediaTek Inc. 2013-02-08 Page 15 of 26

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5 High Frequency Clock Generation

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5.1 Clock Generator (CLKG)

This is an integer-N PLL that generates the 416MHz clocks for The TX DAC and Rx ADC. This operates at 26MHz (16x26MHz=416MHz) and as well as the
416MHz clocks certain 26MHz clocks are produced for synchronization e.g. TX Dynamic clock 26MHz from the feedback path so as to be synchronized to the

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416MHz clocks. Also the 26MHz clock for the Tx ADC (power detector) is produced from this block.

5.2
fa. K
Calibration Test Tone Generator (TTG)
an TE
This is a PLL used to generate a test tone for certain calibration modes.
1. Feedback to receiver inputs for image rejection calibration
2. Feedback to power detector pin (PDET) to us as a calibration tone for receiver gain calibration
Sh IA
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Version 1.2 (draft) © MediaTek Inc. 2013-02-08 Page 16 of 26

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6 Transmitter

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Transmitter consists of 5 output ports. TX_LB2 and TX_HB1 ports are multi-mode ports which can support 2G or 3G depending on application circuits on the
phone. Typ. maximum TX output power is >0dBm. Overall TX gain dynamic range is 78dB in RF and 8dB in BB. The power detection circuits are also
included for better power accuracy over power region of PA gain mode change. In order to ensure power detection accuracy, the PCB trace to DET pin should
not be put too close to TX output signal traces.

wa C
6.1 Tx Driver Mapping and Block Diagram
fa. K
Tx Output Port Mapping
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MT6166 TX Output Port


GSM850/900 FDD B5/B6/B8 Notes
Name
 
Sh IA

3GL5_TX 3G Path only

2GLB_TX   2G Path or 3G Path or Multimode Path


R ED

MT6166 TX Output Port FDD B1/B2/B3/B4


GSM1800/1900 Notes
Name TDD B34/B39/B40
2G Path or 3G Path or Multimode Path or TDD Reuse
2GHB_TX  
FO M

Path
3GH1_TX  3G FDD or TDD Path

3GH2_TX  3G FDD or TDD Path

Version 1.2 (draft) © MediaTek Inc. 2013-02-08 Page 17 of 26

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BB/RF Boundary Passive RC
with up-
Active LPF converter PGA Bulans

@ F
TX_BBIP/TX_BBIN
DAC P
TX HB1 (2G HB)

ng ON
TX_BBQP/TX_BBQN TX HB2 (3G HB)
DAC N

TX HB3 (3G HB)


AM 10 LO Gen
/ DAC

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TX LB1 (3G LB)
fs@416MHz CLKG
TX LB2 (2G LB)
fa. K FM_HP
BSI_DATA[2:0] DCO
MT6572/
+DEM
MT6582 TDC DLPF +SDM
DBB BSI_CLK /2 /4
an TE
2G DFE +Temp
Comp
BSI_EN

/N /2
Loopback
Sh IA

TX_BPI1 FM_LP PGA


(3G DCOC only) /2 /4 (IQ/GainStep)
R ED

2G DCOC Down- Det Path


3G IQCAL fs@26MHz PGA P Filter
converter

ADC DET_GND

Power
FO M

P2
DET
Calibration
ADC
N
N2
(TX DYN)
TMEAS
P2
From TTG N2 Thermo

Figure 4 : Tx Block Diagram

Version 1.2 (draft) © MediaTek Inc. 2013-02-08 Page 18 of 26

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7 Receiver Specification

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ng ON
The receiver circuits are all regulated by the internal LDOs.
The direct conversion/LIF receiver contains all active circuits for the complete receiver chain supporting single-cell (SC)/dual-cell (DC) 3G WCDMA, 3G
TDSCDMA and 2G GSM/GPRS/EDGE (GGE) mode reception. The path contains a total of 7 LNAs (Low Noise Amplifier). The first 4 LNAs support 3G
Band1/2/3/4/5/6/8/9; the fifth LNA supports TDD B40; the last 2 LNAs support GGE low band (GSM850/900) and GGE high band (DCS1800/PCS1900). GGE
high band LNA also supports TDD B33/B34/B39.

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The receiver can also be used in platforms which support for dual-talk operations. In dual-talk applications, the first 4 LNAs also support TDD B33/B34 and
2G bands through co-banding. As listed in the table, there are 8 scenarios for single-talk and dual-talk applications. 3-wire control is used to choose one of
these scenarios for normal operation.

@ F
Sawless for single; Saw for dual Duplexer

ng ON
2G HB/
Scenario Mode ST/DT 2G LB LNA TDD B40 LNA 3G B1 LNA 3G B2 LNA 3G B5 LNA 3G B8 LNA
TDD B34&39 LNA

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GSM850/900 DCS/PCS
1 2G single talk
T1 T1
fa. K
dual talk GSM850 DCS PCS GSM900
2 2G
2G+2G T1_1 T1_1 T1_2 T1_2
an TE
GSM850/900 DCS/PCS 3G B1 3G B2 3G B5 3G B8
3 WCDMA single talk
T1 T1 T3 T3 T3 T3
Sh IA

dual talk GSM850 DCS 3G B1 3G B5 GSM900 T1_2


4 WCDMA
2G+3G T1_1 T1_1 T3 3G B2 T3 T3 3G B8 T3

GSM850/900 DCS/PCS/TDD T1 TDD B40


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5 TDSCDMA single talk


T1 B34&39 T2 T2

dual talk GSM850 DCS T1_1 TDD B40 TDD B34 PCS GSM900
6 TDSCDMA
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2G+TD T1_1 TDD B39 T2 T2 T2_1 T1_2 T1_2

GSM850/900 DCS/PCS T1 TDD B40 3G B1 3G B2 3G B5 3G B8


7 WGT single talk
T1 TDD B34&39 T2 T2 T3 T3 T3 T3

dual talk
8 WGT Any one of the 2 combo
GSM850 DCS TDD B40 3G B1 PCS T1_2 3G B5 GSM900 T1_2
T1_1 T1_1 T2 T3 3G B2 T3 T3 3G B8 T3
3G+2G, 2G+TD

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All LNAs have balanced inputs and are fully integrated. The quadrature LO signals are generated by a divide-by-2 divider for high band (HB) LNAs and a
divide-by-4 divider for the low band (LB) LNAs. The RF signal is down converted by high/low band quadrature direct-down-conversion mixers. The analog
baseband filter is a low pass filter with programmable transfer function and gain controls. Besides, it contains an RC-calibration circuit, and a DC Offset

@ F
Cancellation circuit (DCOC). The low-pass filter is configured as a 2nd-order Butterworth filter for 3G FDD SC, 3G FDD DC, TDD DC and GGE modes.
Receiver power ON/OFF sequence, LNA/band selection, total receiver gain including LNA, Mixer and analog baseband and DCOC timing are controlled by

ng ON
digital circuits. In addition, IQ calibration is done by injecting an offset frequency test tone generated by the test tone generator (TTG) into the RX mixer.
Additional on-the-fly IQ imbalance tracking may be added in the DBB without changing the receiver design. The timing and control of this calibration scheme
are also controlled by L1 software and digital circuitry.

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8 Rx Synthesizer Specification

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ng ON
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SRX uses analog PLL architecture.


Reference doubler is used to improve integrated phase noise (IPN). A fast duty-cycle calibration is used to correct 26M duty error.
FO M

FBDIV is simple MMD with zero-phase-start to speed up locking time.


A mash-I-I-I SDM with dithering is used to generate fractional part control MMD.

Multi-modes VCO include Temperature-Compensation-Loop (TCL) to against ~140°temperature drifting.

The SRX can generate 4xLO for 1GHz LB and 2xLO for 2GHz HB. It provides LO to 2G-RX, FDD-RX, TDD-T/RX.

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9 Tx Synthesizer Specification

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ng ON
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Above block diagram shows the TX synthesizer architecture. ADPLL architecture is used here for frequency modulation. It is similar to conventional PLL
except charge pump is replaced by TDC and we used digital loop filter instead of analog one.

The ADPLL input clock is 26MHz and output clock is 2*LO (for TX HB) or 4*LO (for TX LB). As conventional PLL, a MESH 1-1-1 modulator is used for
fractional part of frequency synthesis.

The TX synthesizer supports 2G TX GMSK/8PSK Phase modulation part and 3G FDD TX LO part and with temperature compensation loop to sustain ~140
degree temperature drift .

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10 Digital Control Interfaces

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ng ON
10.1 Introduction

RFSYS is programmed through 5 BSI GPIO PADs. Both write and read operations are supported and 5 wires are used (3 bi-direction data pins, one clock pin,
and one enable pin). All BSI interfaces are through VIO18 domain.

wa C
10.2 Power-On Reset
The chip includes two Power-On Reset (POR) operating from the static domain LDO’s on the VXODIG domain. These operate on the DCXO_DIGITAL and
fa. K
GLOBAL_STATIC digital blocks from the 1.1V supply domain directly derived from VXODIG via LDO’s. The designs are identical and since VXODIG is an
“always-on” supply then a simplified implementation can be used - specifically there should not be situation where the VXODIG supply can drop after the
an TE
internal LDO is enabled. The important point then is that the reset needs to be active for sufficiently long that the power supply has stabilized but short enough
that the domain is available for BSI programming when requested.

In the case of the DCXO POR the LDO is directly enabled from the VXODIG supply. In the case of the GS LDO VXODIG is always present (in normal mode)
and the LDO for this domain is enabled from the baseband (26MHz clock enabled from MT6583).
Sh IA

The operation is shown in the Figure below.


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ng ON
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10.3 BSI Clock Frequency


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The BSI Clock is designed to operate at a maximum frequency of 61.44 MHz, switching down to 30.72 MHz during the read back phase of a read operation.

The BSI clock has nominally a 50% duty cycle (< 40:60 should be guaranteed by the baseband clock generator).
FO M

10.4 BSI Operation


wire3_en tcyc tcyc

wire3_clk

wire3_data[2] data
bit A6 A3 A0 D17 D14 D11 D8 D5 D2

wire3_data[1] read
bit A5 A2 D19 D16 D13 D10 D7 D4 D1

wire3_data[0] A7 A4 A1 D18 D15 D12 D9 D6 D3 D0

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Timing Diagram of Write Operation

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wire3_en

wire3_clk

ng ON
wire3_datai[2] data
bit A6 A3 A0

wire3_datai[1] read
bit A5 A2 0

wire3_data[0] A7 A4 A1 0

wa C
wire3_datao[2] D19 D16 D13 D10 D7 D4 D1

wire3_datao[1] D18 D15 D12 D9 D6 D3 D0


fa. K
wire3_datao[0] D17 D14 D11 D8 D5 D2 0
an TE
wire3_dataoe
DBB -> RF RF -> DBB

Timing Diagram of Read Operation


Sh IA
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