HGT1N30N60A4D

Data Sheet December 2001

600V, SMPS Series N-Channel IGBT with Features

Anti-Parallel Hyperfast Diode 100kHz Operation At 390V, 20A
The HGT1N30N60A4D is a MOS gated high voltage
600V Switching SOA Capability
switching device combining the best features of a MOSFETs
and a bipolar transistor. These devices have the high input Typical Fall Time . . . . . . . . . . . . . . . . . 58ns at TJ = 125oC
impedance of a MOSFET and the low on-state conduction Low Conduction Loss
loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25oC and 150oC. This Symbol
IGBT is ideal for many high voltage switching applications C
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operating at high frequencies where low conduction losses
are essential. This device has been optimized for high
frequency switch mode power supplies.
G
Formerly Developmental Type TA49345.

Ordering Information E
PART NUMBER PACKAGE BRAND

HGT1N30N60A4D SOT-227 30N60A4D Packaging

NOTE: When ordering, use the entire part number. JEDEC STYLE SOT-227B

GATE EMITTER

TAB
(ISOLATED)

COLLECTOR EMITTER

Fairchild CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027

2001 Fairchild Semiconductor Corporation HGT1N30N60A4D Rev. B

 HGT1N30N60A4D

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified

UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES 600 V
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 96 A
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 39 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM 240 A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES 20 V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGEM 30 V
Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA 150A at 600V
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 255 W
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0 W/oC
RMS Isolation Voltage, Any Terminal To Case, t = 1 (Min) . . . . . . . . . . . . . . . . . . . . . . . .VISOL 2500 V
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150 oC
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Baseplate Screw Torque 4mm Metric Screw Size . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5 N-m
Terminal Screw Torque 4mm Metric Screw Size . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.7 N-m
CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE:
1. Pulse width limited by maximum junction temperature.

Electrical Specifications TJ = 25oC, Unless Otherwise Specified

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Collector to Emitter Breakdown Voltage BVCES IC = 250A, VGE = 0V 600 - - V
Collector to Emitter Leakage Current ICES VCE = 600V TJ = 25oC - - 250 A
TJ = 125oC - - 2.8 mA
Collector to Emitter Saturation Voltage VCE(SAT) IC = 30A, TJ = 25oC - 1.8 2.7 V
VGE = 15V TJ = 125oC - 1.6 2.0 V
Gate to Emitter Threshold Voltage VGE(TH) IC = 250A, VCE = 600V 4.5 5.2 7.0 V
Gate to Emitter Leakage Current IGES VGE = 20V - - 250 nA
Switching SOA SSOA TJ = 150oC, RG = 3, VGE = 15V, 150 - - A
L = 100H, VCE = 600V
Gate to Emitter Plateau Voltage VGEP IC = 30A, VCE = 300V - 8.5 - V
On-State Gate Charge Qg(ON) IC = 30A, VGE = 15V - 225 270 nC
VCE = 300V VGE = 20V - 300 360 nC
Current Turn-On Delay Time td(ON)I IGBT and Diode at TJ = 25oC, - 25 - ns
ICE = 30A,
Current Rise Time trI - 12 - ns
VCE = 390V,
Current Turn-Off Delay Time td(OFF)I VGE = 15V, - 150 - ns
Current Fall Time tfI RG = 3, - 38 - ns
L = 200H,
Turn-On Energy (Note 2) EON1 - 280 - J
Test Circuit (Figure 24)
Turn-On Energy (Note 2) EON2 - 600 - J
Turn-Off Energy (Note 3) EOFF - 240 350 J
Current Turn-On Delay Time td(ON)I IGBT and Diode at TJ = 125oC, - 24 - ns
ICE = 30A,
Current Rise Time trI - 11 - ns
VCE = 390V, VGE = 15V,
Current Turn-Off Delay Time td(OFF)I RG = 3, - 180 200 ns
Current Fall Time tfI L = 200H, - 58 70 ns
Test Circuit (Figure 24)
Turn-On Energy (Note 2) EON1 - 280 - J
Turn-On Energy (Note 2) EON2 - 1000 1200 J
Turn-Off Energy (Note 3) EOFF - 450 750 J
Diode Forward Voltage VEC IEC = 30A - 2.2 2.5 V

2001 Fairchild Semiconductor Corporation HGT1N30N60A4D Rev. B

 HGT1N30N60A4D

Electrical Specifications TJ = 25oC, Unless Otherwise Specified (Continued)

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Diode Reverse Recovery Time trr IEC = 30A, dIEC/dt = 200A/s - 40 55 ns
IEC = 1A, dIEC/dt = 200A/s - 30 42 ns
Thermal Resistance Junction To Case RJC IGBT - - 0.49 oC/W

Diode - - 2.0 oC/W

NOTES:
2. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in
Figure 24.
3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
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Typical Performance Curves Unless Otherwise Specified

ICE, COLLECTOR TO EMITTER CURRENT (A)

100
200
TJ = 150oC, R G = 3, VGE = 15V, L = 100H
ICE , DC COLLECTOR CURRENT (A)

90 VGE = 15V

80

70 150

60
50 100
40
30
50
20
10
0 0
25 50 75 100 125 150 0 100 200 300 400 500 600 700
TC , CASE TEMPERATURE (oC) VCE, COLLECTOR TO EMITTER VOLTAGE (V)

FIGURE 1. DC COLLECTOR CURRENT vs CASE FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
TEMPERATURE
tSC , SHORT CIRCUIT WITHSTAND TIME (s)

500 18 900

ISC, PEAK SHORT CIRCUIT CURRENT (A)

VCE = 390V, RG = 3, TJ = 125oC
fMAX, OPERATING FREQUENCY (kHz)

TC VGE
300 16 800
75oC 15V

14 700
ISC
100 12 600
fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
fMAX2 = (PD - PC) / (EON2 + EOFF) 10 500
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%) 8 400
RJC = 0.49oC/W, SEE NOTES tSC
6 300
TJ = 125oC, R G = 3, L = 200H, V CE = 390V
10 4 200
1 10 30 60 10 11 12 13 14 15
ICE, COLLECTOR TO EMITTER CURRENT (A) VGE , GATE TO EMITTER VOLTAGE (V)

FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO FIGURE 4. SHORT CIRCUIT WITHSTAND TIME

EMITTER CURRENT

2001 Fairchild Semiconductor Corporation HGT1N30N60A4D Rev. B

 HGT1N30N60A4D

Typical Performance Curves Unless Otherwise Specified (Continued)

ICE, COLLECTOR TO EMITTER CURRENT (A)

ICE, COLLECTOR TO EMITTER CURRENT (A)

50 50
DUTY CYCLE < 0.5%, VGE = 12V DUTY CYCLE < 0.5%, VGE = 15V
PULSE DURATION = 250s PULSE DURATION = 250s
40 40

30 30

20 20
TJ = 125oC TJ = 125oC

10 10
TJ = 150oC TJ = 25oC TJ = 150oC TJ = 25oC

0 0
0
www.DataSheet4U.com 0.5 1.0 1.5 2.0 2.5 0 0.5 1.0 1.5 2.0 2.5
VCE, COLLECTOR TO EMITTER VOLTAGE (V) VCE, COLLECTOR TO EMITTER VOLTAGE (V)

FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE

3500
RG = 3, L = 200H, VCE = 390V 1400
RG = 3, L = 200H, VCE = 390V
EON2 , TURN-ON ENERGY LOSS (J)

EOFF , TURN-OFF ENERGY LOSS (J)

3000 1200
TJ = 125oC, VGE = 12V, VGE = 15V
2500 1000

2000 800
TJ = 125oC, VGE = 12V OR 15V
1500 600

1000 400

500 200
TJ = 25oC, VGE = 12V, VGE = 15V TJ = 25oC, VGE = 12V OR 15V
0 0
0 10 20 30 40 50 60 0 10 20 30 40 50 60
ICE , COLLECTOR TO EMITTER CURRENT (A) ICE , COLLECTOR TO EMITTER CURRENT (A)

FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT EMITTER CURRENT

34 100
RG = 3, L = 200H, VCE = 390V RG = 3, L = 200H, VCE = 390V
td(ON)I, TURN-ON DELAY TIME (ns)

32 TJ = 25oC, TJ = 125oC, VGE = 12V

80
30 TJ = 125oC, VGE = 15V, VGE = 12V
trI , RISE TIME (ns)

28 60

26 TJ = 25oC, VGE = 12V

40

24
20
22 TJ = 25oC, TJ = 125oC, VGE = 15V
TJ = 25oC, VGE = 15V
20 0
0 10 20 30 40 50 60 0 10 20 30 40 50 60
ICE , COLLECTOR TO EMITTER CURRENT (A) ICE , COLLECTOR TO EMITTER CURRENT (A)

FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT EMITTER CURRENT

2001 Fairchild Semiconductor Corporation HGT1N30N60A4D Rev. B

 HGT1N30N60A4D

Typical Performance Curves Unless Otherwise Specified (Continued)

220 70
RG = 3, L = 200H, VCE = 390V RG = 3, L = 200H, VCE = 390V
td(OFF)I , TURN-OFF DELAY TIME (ns)

200 60
VGE = 12V, VGE = 15V, TJ = 125oC

tfI , FALL TIME (ns)

TJ = 125oC, VGE = 12V OR 15V
180 50

160 40

TJ = 25oC, VGE = 12V OR 15V

140 30

VGE = 12V, VGE = 15V, TJ = 25oC

120 20
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0 10 20 30 40 50 60 0 10 20 30 40 50 60
ICE , COLLECTOR TO EMITTER CURRENT (A) ICE , COLLECTOR TO EMITTER CURRENT (A)

FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
EMITTER CURRENT CURRENT
ICE, COLLECTOR TO EMITTER CURRENT (A)

350 15.0
DUTY CYCLE < 0.5%, VCE = 10V IG(REF) = 1mA, RL = 15, TJ = 25oC
VGE, GATE TO EMITTER VOLTAGE (V)
300 PULSE DURATION = 250s 12.5
TJ = 25oC VCE = 600V
250 VCE = 400V
10.0

200
TJ = 125oC 7.5
VCE = 200V
150
TJ = -55oC
5.0
100

50 2.5

0 0
6 7 8 9 10 11 12 0 50 100 150 200 250
VGE, GATE TO EMITTER VOLTAGE (V) QG , GATE CHARGE (nC)

FIGURE 13. TRANSFER CHARACTERISTIC FIGURE 14. GATE CHARGE WAVEFORMS

ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ)

ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ)

5 20
RG = 3, L = 200H, VCE = 390V, VGE = 15V TJ = 125oC, L = 200H, VCE = 390V, VGE = 15V
ETOTAL = EON2 + EOFF ETOTAL = EON2 + EOFF
4 16

ICE = 60A
3 12

2 8
ICE = 30A
ICE = 60A
1 4
ICE = 15A ICE = 30A
ICE = 15A
0 0
25 50 75 100 125 150 3 10 100 300
TC , CASE TEMPERATURE (oC) RG, GATE RESISTANCE ()

FIGURE 15. TOTAL SWITCHING LOSS vs CASE FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE
TEMPERATURE

2001 Fairchild Semiconductor Corporation HGT1N30N60A4D Rev. B

 HGT1N30N60A4D

Typical Performance Curves Unless Otherwise Specified (Continued)

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

10 2.3
FREQUENCY = 1MHz DUTY CYCLE < 0.5%, VGE = 15V
PULSE DURATION = 250s, TJ = 25oC
2.2
8
C, CAPACITANCE (nF)

2.1
6
CIES 2.0 ICE = 60A
4
1.9
ICE = 30A

2 COES 1.8
ICE = 15A
CRES
0 1.7
0
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VCE, COLLECTOR TO EMITTER VOLTAGE (V) VGE, GATE TO EMITTER VOLTAGE (V)

FIGURE 17. CAPACITANCE vs COLLECTOR TO EMITTER FIGURE 18. COLLECTOR TO EMITTER ON-STATE VOLTAGE
VOLTAGE vs GATE TO EMITTER VOLTAGE

35 100
DUTY CYCLE < 0.5%, dIEC/dt = 200A/s
PULSE DURATION = 250s 90
30 125oC trr
IEC , FORWARD CURRENT (A)

trr , RECOVERY TIMES (ns)

80
25 70
125oC 25oC
60
20 125oC ta
50
25oC trr
15 40
125oC tb
10 30
20 25oC ta
5
10 25oC tb
0 0
0 0.5 1.0 1.5 2.0 2.5 0 5 10 15 20 25 30
VEC , FORWARD VOLTAGE (V) IEC , FORWARD CURRENT (A)

FIGURE 19. DIODE FORWARD CURRENT vs FORWARD FIGURE 20. RECOVERY TIMES vs FORWARD CURRENT
VOLTAGE DROP

60 1400
Qrr , REVERSE RECOVERY CHARGE (nC)

IEC = 30A, VCE = 390V VCE = 390V

125oC ta
1200
50
125oC, IF = 40A
trr , RECOVERY TIMES (ns)

1000
40
125oC, IF = 20A
125oC tb 800
30
25oC ta
600
25oC, IF = 40A
20
400
25oC tb
10
200 25oC, IF = 20A

0 0
200 300 400 500 600 700 800 900 1000 200 400 600 800 1000
dIEC/dt, RATE OF CHANGE OF CURRENT (A/s) diEC/dt, RATE OF CHANGE OF CURRENT (A/s)

FIGURE 21. RECOVERY TIMES vs RATE OF CHANGE OF FIGURE 22. STORED CHARGE vs RATE OF CHANGE OF
CURRENT CURRENT

2001 Fairchild Semiconductor Corporation HGT1N30N60A4D Rev. B

 HGT1N30N60A4D

Typical Performance Curves Unless Otherwise Specified (Continued)

ZJC , NORMALIZED THERMAL RESPONSE

100

0.50

0.20

0.10
10-1
0.05
t1
0.02
PD
0.01 DUTY FACTOR, D = t1 / t2
SINGLE PULSE PEAK TJ = (PD X ZJC X RJC) + TC t2
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10-5 10-4 10-3 10-2 10-1 100 101
t1 , RECTANGULAR PULSE DURATION (s)

FIGURE 23. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE

Test Circuit and Waveforms

HGT1N30N60A4D
DIODE TA49373
90%

VGE 10%
EON2
L = 200H EOFF
VCE
RG = 3
90%

+ ICE 10%
HGT1N30N60A4D VDD = 390V td(OFF)I trI
- tfI
td(ON)I

FIGURE 24. INDUCTIVE SWITCHING TEST CIRCUIT FIGURE 25. SWITCHING TEST WAVEFORMS

2001 Fairchild Semiconductor Corporation HGT1N30N60A4D Rev. B

 HGT1N30N60A4D

Handling Precautions for IGBTs Operating Frequency Information

Insulated Gate Bipolar Transistors are susceptible to gate- Operating frequency information for a typical device
insulation damage by the electrostatic discharge of energy (Figure 3) is presented as a guide for estimating device
through the devices. When handling these devices, care performance for a specific application. Other typical
should be exercised to assure that the static charge built in frequency vs collector current (ICE) plots are possible using
the handlers body capacitance is not discharged through the the information shown for a typical unit in Figures 5, 6, 7, 8, 9
device. With proper handling and application procedures, and 11. The operating frequency plot (Figure 3) of a typical
however, IGBTs are currently being extensively used in device shows fMAX1 or fMAX2; whichever is smaller at each
production by numerous equipment manufacturers in point. The information is based on measurements of a
military, industrial and consumer applications, with virtually typical device and is bounded by the maximum rated
no damage problems due to electrostatic discharge. IGBTs junction temperature.
can be handled safely if the following basic precautions are
fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I).
taken:
Deadtime (the denominator) has been arbitrarily held to 10%
1. Prior to assembly into a circuit, all leads should be kept
www.DataSheet4U.com of the on-state time for a 50% duty factor. Other definitions
shorted together either by the use of metal shorting are possible. td(OFF)I and td(ON)I are defined in Figure 25.
springs or by the insertion into conductive material such Device turn-off delay can establish an additional frequency
as ECCOSORBD LD26 or equivalent. limiting condition for an application other than TJM . td(OFF)I
2. When devices are removed by hand from their carriers, is important when controlling output ripple under a lightly
the hand being used should be grounded by any suitable loaded condition.
means - for example, with a metallic wristband.
fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON2). The
3. Tips of soldering irons should be grounded.
allowable dissipation (PD) is defined by PD = (TJM - TC)/RJC.
4. Devices should never be inserted into or removed from
The sum of device switching and conduction losses must
circuits with power on.
not exceed PD . A 50% duty factor was used (Figure 3) and
5. Gate Voltage Rating - Never exceed the gate-voltage the conduction losses (PC) are approximated by
rating of VGEM. Exceeding the rated VGE can result in
PC = (VCE x ICE)/2.
permanent damage to the oxide layer in the gate region.
6. Gate Termination - The gates of these devices are EON2 and EOFF are defined in the switching waveforms
essentially capacitors. Circuits that leave the gate shown in Figure 25. EON2 is the integral of the instantaneous
open-circuited or floating should be avoided. These power loss (ICE x VCE) during turn-on and EOFF is the
conditions can result in turn-on of the device due to integral of the instantaneous power loss (ICE x VCE) during
voltage buildup on the input capacitor due to leakage turn-off. All tail losses are included in the calculation for
currents or pickup. EOFF; i.e., the collector current equals zero (ICE = 0).
7. Gate Protection - These devices do not have an internal
monolithic Zener diode from gate to emitter. If gate
protection is required an external Zener is recommended.

2001 Fairchild Semiconductor Corporation HGT1N30N60A4D Rev. B

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PRODUCT STATUS DEFINITIONS
Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or This datasheet contains the design specifications for
In Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

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any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. H4