International Journal on Recent and Innovation Trends in Computing and Communication

Volume: 4 Issue: 3

ISSN: 2321-8169
64 - 68

_______________________________________________________________________________________

Design Methodology of Small Signal Power Amplifier using Linear S-parameter

Model
Madri K. Chauhan
P.G Student, M.E. E.C. (C.S.E.)
L.J. Institute of Engineering & Technology,
Ahmedabad, India
[email protected]

Dr. Anil kumar Suthar

Guide (Director)
L.J. Institute of Engineering & Technology,
Ahmedabad, India

AbstractThis paper illustrates the linear design procedure and simulation of small signal power amplifier at frequency of 900 MHz based on
an RF MOSFET device of type RD45HMF1 [15] fromMISTUSHIBUSHI. The linear S-Parameter model of this device is used in Agilent ADS
to design the power stage includingthe stability analysis,complex conjugate matching and design of source and load matching networks. The
linear model is specifically required to achieve the desired gain with better input and output return losses.The matching network is then designed
to achieve specified performance figures.It is hoped that the understanding gained through the work will be useful in futureSSPA developments.
KeywordsRF Power amplifier,EIRP(Effective Isotropic Radiated Power),MOSFET, Gain

__________________________________________________*****_________________________________________________
I. INTRODUCTION
ThePower amplifier in a communication transponder along
with transmit antennadecides the EIRP (Effective Isotropic
Radiated Power) of the satellite. With the increased
requirement of higher channel capacity and better coverage,
these days a higher EIRP is required. The Effective Isotropic
Radiated Power (EIRP) is availablefrom a communication
payload generally depends upon theantenna gain, coverage
requirements and output powercapability of the RF amplifier
present in the downlinkchannel. The Gain of transmitting
antenna is proportional to its sizeand larger antennas cannot be
accommodated on the payload. So, the power amplifier plays
an important role in meeting the EIRP requirement of the
satellite. There are two types of power amplifiers used in the
transponders viz. Travelling Wave Tube Amplifiers (TWTAs)
or Solid State Power Amplifiers (SSPAs).For thehigher
frequencies, generally TWTAs areemployed to do the job
however size is a constraint at lowerfrequencies such as UHF
band.For UHF band high power applications the TWTAs are
not available and hencethe SSPAs are used.SSPA is the
cascaded system of small signal amplifiers, medium power
amplifiersand high power amplifiers.The most important
considerations for RF and microwave power amplifiers are
bandwidth,efficiency, gain, linearity and thermal effects.
Sometimes, the gain is compromised over the efficiency
requirement.
Typically, Silicon Bipolar junction transistors (BJT) are used
at 900MHz Frequency. Then GaAs FETs and GaN also can be
used fordeveloping this SSPAs. However,the
dcratingrequirements of GaAs FETs is 8-9volts. Thus, to
achieve higher output power, the high currentoperation is
required. This makes the designof EPC challenging. The GaN
device is not available at this frequency band so MOSFET is
used for this operation.
II. AMPLIFIER DESIGNMETHODOLOGY USING S-PARAMETER
MODEL

two ports consisting of H,Yor Z parameters. If the frequencies

are in the microwave range , the H,Y or Z parameters can not
be measured because of unavailability of equipment to
measure the total voltage and current at the port of network.
The short and Open circuits are very difficult to obtain over a
broad band of the frequencies. So the new method is
characterized to overcome these problems. The logical
variables which are used at the microwave frequencies are the
travelling wave rather than the total voltage and total currents.
These are the S-Parameters are given below and two port
network is shown in fig.1.
b1=S11a1+s12a2
b2=s21a1+s22a2

(1)
(2)

Fig.1. Two Port Network

III. STABILITY AND BIASING CONSIDERATION
A. Stability Consideration
It is necessary to checkthe stability of a device even beyond
the operating bandof interest to check for the undesired
potential oscillations . Thereforethe S-parameter simulation is
done to check the stability factor and the source and load
stability circlesfor the device. There are two types of stability:
Unconditional stability: The network is an unconditionally
stable if |in| < 1 and| out|<1 for all the passive source and
load impedances (i.e., |S| < 1 and |L | < 1).
Conditional stability: The network is conditionally stable if
|in| < 1 and |out| < 1 only for a certain range of passive source
and load impedances. This case is also referred asa potentially
unstable.

In the design of the power amplifier,it is often desirable to

interconnect many active and passive elements together. The
commonly used microwave solid devices are in the form of
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International Journal on Recent and Innovation Trends in Computing and Communication

Volume: 4 Issue: 3

ISSN: 2321-8169
64 - 68

_______________________________________________________________________________________
The stability factor is given by following equation.

1 S11 S22
1
2 S12S21
2

(3)

=S11S22-S12S21< 1

(4)
Fig.3. Stability Analysis (Unstable device)

Fig.4. Stability Analysis (Unstable device)

Fig.2.Output Stability Circles for a conditionally stable device

The stability condition of the amplifier circuit
frequency dependent because the input and
matching networks depend on frequency. So It is
the amplifier to be stable at its design frequency
at other frequencies.

is usually a
the output
possible for
but unstable

Stability Circles:
With the two-port small-signal S-parameters at a particular
frequency and a particular bias condition, the input and output
stability circles can be derived. The stability circles can be
graphically represented on the Smith chart. These circles
provide a set of source and load impedance such that the
magnitudes of the reflection coefficients of the input and
output are less than one.
Input Stability Circle:

=
=

(5)

(6)

B. Biasing Consideration
The device has to be biased such that it gives the maximum
output power without clipping the input signal. The Biasing
process decides the class of the operation and the operating
point. The range of the output voltage or the current signal
should not be limited by the device if it has to perform in the
linear region.The active device requires a DC-bias in order to
operate in the active region. Appropriate bias point is one of
the most critical aspects in the Power Amplifier design. The
bias network not only defines the Power Amplifier
performance over RF drive, but also does over temperature,
and presented with the two DC voltage supplies connected to
the active device.
IV. MATCHING NETWORKS
These
networks
are
designed
for
impedance
transformation, typically between the transistor and
terminations of 50 Ohm on the input/output of amplifier.
Matching networks provide transformation from "G" and "L"
to the standard 50 terminations at a limited bandwidth. These
"G" and "L" values are required to provide the maximum
desired power, gain or PAE. Therefore it is important to find
(6)optimum values through load pull measurements or
these
simulations.

Output Stability Circle:

=
=

(7)

(8)

Fig 3 represents the unstable region in which the source and

load stability circles are inside the smith chart and K is less
than 1. Fig 4 represents the stable region that has source and
load stability circles outside the smith chart and K is greater
than 1achieved by putting the resistor of 3.5 ohm in series
with the gate terminal of the device.

Fig.5.Impedance Matching Network

At this case, source delivers all its available power to the
output shown in fig.5.
The transducer, the available, and the operating power gains
become equal to themaximum available gain GMAG when
both a generator and a load are matchedconjugately to the twoport, that is,
in= G and out= L.
(9)
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International Journal on Recent and Innovation Trends in Computing and Communication

Volume: 4 Issue: 3

ISSN: 2321-8169
64 - 68

_______________________________________________________________________________________
=
=

1 12 4 1 2

(10)

21
2 22 4 2 2

(11)

22

The optimum conjugate matched terminations are:

G= S*11, L= S22

(12)

In this project optimum load impedances are obtained through

complex conjugate simulations using the device model. These
values are then used to design the input and output matching
networks for Maximum transfer of power from the source to
the transistor and from transistor to the load that takes place
when there is a conjugate matching at both the input and the
output.
Selection of Load & Source Impedances:
After Stabilizing the device there is a need to find the input
and output impedance of the device so that appropriate
matching network can be designed. ADS provides a tool that
gives the value of the conjugate matched input and output
impedance that must be presented to the device so that the
device can be matched to 50ohm line. Fig.6 shows the input
and the output impedances that must be presented to the input
and output ports respectively to conjugate matched the device.
This is the condition for attaining maximum gain for the
amplifier. The reflection Coefficient of the Source (S11*) and
the Load (S22*) are simultaneous matched reflection
coefficients that must be presented to the input and output
ports respectively to achieve the maximum gain from the
device.Depending upon the design of the source impedance is
selected as Zs=4.545-j*1.894 Ohm and ZL=1.258-j*2.618 ohm

Fig.7. Input Matching Network

Fig.8. Response of input Matching network

Output Matching Network:
The load termination of 50ohm is matched to a specified
impedance of 1.258-j*2.618 by putting series inductor and
shunt capacitors using complex conjugate theorem shown in
fig.9 & 10.

Fig.9. Output Matching Network

Fig.6. Source and Load Impedances

Design of Matching Network
The impedances given by SmGamma1 and SmGamma2
obtained in previous step are 4.545-j*1.894 Ohm and 1.258j*2.618 ohmrespectively. It implies that 50 ohm input and
output lines have to be transformed into4.545-j*1.894 ohms
and1.258-j*2.618 ohms respectively. The matching network
is designed for its performance and for the high power output
and the power added efficiency.
Input Matching Network:
The 50ohm source termination is matched to the specific
impedance of 4.545-j*1.894 ohm by putting series inductor
and shunt capacitors using the complex conjugate theorem
shown in fig.7&8.

Fig.10. Response of Output matching Network

The complete amplifier design using S-Parameter model is
achieved by combining both the input and output matching
networks. The response in form of gain,input & output return
loss and isolation is represented in fig 11.

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International Journal on Recent and Innovation Trends in Computing and Communication

Volume: 4 Issue: 3

ISSN: 2321-8169
64 - 68

_______________________________________________________________________________________
VI. CONCLUSION
This paper represents the design steps to be followed for
thedesign of the power amplifier which has been designed
using the linearS-Parameter model. The accuracy of this model
is dependenton the accuracy of the model parameters, which in
tumdepends on the device characterization process. Initially
the device is unstable which is made stable using series
resistor with gate terminal.After stabilization of device,using
the complex conjugate matching, the input and output
matching networks are designed to meet the gain,input return
loss and output return loss requirements. The gain,input and
output return losses are as per the requirements.
Fig.11.Response of amplifier using Linear S-Parameter model
V. POWER GAINS
The amplification properties of the two-port can be achieved
by comparingthe power Pin going into the two-port to the
power PL coming out of the two-port networkand going into
the load.Three most widely used definitions for the power gain
of two-port network are thetransducer power gain GT, the
available power gain GA, and the power gain GP are defined as
follows:
Power gain = GP = PL/Pin is the ratio of the power dissipated
in the load ZL to the power delivered to the input of the twoport network.
2

GP =

1 s

s 21 1 L

in

22

(13)
2

Available power gain = GA = Pavn/Pavs is the ratio of the

power available from a two-port network to the power
available from the source.

s21 1 S
2

1 1 s

GA =

out

(14)
2

11 S

Transducer power gain = GT = PL/Pavs is the ratio of the

power delivered to a load to the power available from the
source.

1 inS 1 S22L

GT =

s21 1 L 1 S
2

(15)

The necessary and the sufficient conditionor simultaneous

matching is K 1, where K is the Rollett stability factor. It
canbe shown that the GMAG can be expressed as:

GMAG

s21
k k 2 1
s12

(16)

The maximum stable gain (GMSG) is the maximum value GMAG

can have, which isachievable when K = 1:

GMSG

s 21
s12

(17)

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International Journal on Recent and Innovation Trends in Computing and Communication

Volume: 4 Issue: 3

ISSN: 2321-8169
64 - 68

_______________________________________________________________________________________
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