Photo Emission

Springer Tracts in Modern Physics 262
Kamakhya Prasad Ghatak
Einsteins
Photoemission
Emission from Heavily-Doped
Quantized Structures
Springer Tracts in Modern Physics

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Einsteins Photoemission
Emission from Heavily-Doped Quantized
Structures
123

Electronics and Communication
Engineering
National Institute of Technology
Agartala
India
ISSN 0081-3869
ISBN 978-3-319-11187-2
DOI 10.1007/978-3-319-11188-9
ISSN 1615-0430 (electronic)

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Professors P.T. Landsberg, P.N. Butcher,

K. Seeger and J.S. Blakemore are now living
in a wonderful world from where the concept
of return visa to this globe called
Earth permanently stays in the band gap
regime. The long interaction with them
for more than three decades through personal
contacts and letters has transformed
an unsophisticated engineer to the present
author. I earnestly believe that they still
enjoy the academic output of my research
group and I write them mental letters
and dedicate this monograph to them but
cannot express my gratitude since I do not
know the present addresses of the said
four rst class semiconductors physicists.
Preface
The unication of the concept of the asymmetry of the wave vector space of the
charge carriers in semiconductors with the modern techniques of fabricating nanostructured materials such as molecular beam epitaxy, metal organic chemical vapor
deposition, ne line lithography and other modern fabrication techniques in one,
two and three dimensions (such as quantum wells (QWs), Doping super-lattices,
inversion and accumulation layers, quantum well super-lattices, carbon nano-tubes,
quantum wires, quantum wire super-lattices, magnetic quantization, magneto size
quantization, quantum dots, magneto inversion and accumulation layers, magneto
quantum well super-lattices, magneto NIPIs, quantum dot super-lattices and other
eld aided low dimensional electronic systems) spawns not only useful quantum
effect devices but also unearth new concepts in the realm of low dimensional solid
state electronics and related disciplines. These semiconductor nanostructures
occupy a central position in the entire arena of condensed matter science, materials
science, computational and theoretical nano-science and technology, semiconductor
optoelectronics, quantized structures and semiconductor physics in general by their
own right and nd extensive applications in quantum registers, quantum switches,
quantum sensors, hetero-junction eld-effect, quantum logic gates, quantum well
and quantum wire transistors, quantum cascade lasers, high-frequency microwave
circuits, high-speed digital networks, high-resolution terahertz spectroscopy,
advanced integrated circuits, super-lattice photo-oscillator, super-lattice photocathodes, resonant tunneling diodes and transistors, super-lattice coolers, thermoelectric devices, thin lm transistors, micro-optical systems, intermediate-band solar
cells, high performance infrared imaging systems, band-pass lters, optical modulators, thermal sensors, optical switching systems, single electron/molecule electronics, nano-tube based diodes, and other nano-electronic devices. Knowledge
regarding these quantized structures may be gained from original research contributions in scientic journals, various patents, proceedings of the conferences,
review articles, and different research monographs [1] respectively. Mathematician
Simmons rightfully tells us [2] that the mathematical knowledge is said to be
doubling in every 10 years, and in this context, we can also envision extrapolation
of the Moores law by projecting it in the perspective of the advancement of new
vii
viii
Preface
research and analyses, in turn, generating novel concepts particularly in the entire
arena of materials science in general [3].
Although many new effects in quantized structures have already been reported,
the interest for further research of other aspects of such quantum-conned materials
is becoming increasingly important. One such signicant property is Einsteins
Photoemission (EP) which is a physical phenomenon and occupies a singular
position in the whole arena of Modern Physics and related disciplines in general and
whose importance has already been established since the inception of Einsteins
photoelectric effect (for which Einstein won Nobel Prize in 1921), which in recent
years nds extensive applications in modern optoelectronics, characterization and
investigation of condensed matter systems, photoemission spectroscopy and related
aspects in connection with the investigations of the optical properties of nanostructures [48]. Interest in low dimensional silicon nanostructures also grew up
and gained momentum, after the discovery of room temperature photoluminescence
and electroluminescence of silicon nano-wires in porous silicon [4]. Work on
ultrathin layers of SiSiO2 super-lattices resulting into visible light emission at room
temperature clearly exhibited low dimensional quantum connement effect [5] and
one of the most popular techniques for analyzing the low dimensional structures is
to employ photoemission techniques. Recent observation of room temperature
photoluminescence and electro luminescence in porous silicon has stimulated
vigorous research activities in silicon nanostructures [6].
In this context, it may be noted that the available reports on the said areas [47]
cannot afford to cover even an entire chapter regarding the EP from heavily doped
(HD) quantized structures and incidentally the second book of the present research
group devoted solely to the elementary study of EP [8] from optoelectronic
materials and their nanostructures does not even contain a paragraph regarding the
EP from HD Quantized Structures. The EP depends on the density-of-states (DOS)
function which, in turn, is signicantly affected by the different carrier energy
spectra of different semiconductors having various band structures. In recent years,
various energy wave vector dispersion relations of the carriers of different materials
have been proposed [9] which have created the interest in studying the EP from HD
materials and their quantized counterparts. The present monograph solely investigates the EP from HD quantized structures of non-linear optical, III-V, II-VI,
Gallium Phosphide, Germanium, Platinum Antimonide, stressed, IV-VI, Lead
Germanium Telluride, Tellurium, II-V, Zinc and Cadmium diphosphides, Bismuth
Telluride, III-V, II-VI, IV-VI and HgTe/CdTe quantum well HD super-lattices with
graded interfaces under magnetic quantization, III-V, II-VI, IV-VI and HgTe/CdTe
HD effective mass super-lattices under magnetic quantization, quantum conned
effective mass super-lattices and super-lattices of HD optoelectronic materials with
graded interfaces on the basis of the newly derived appropriate respective HD
dispersion relation in each case. Incidentally, even after 20 years of continuous
effort, we see that the complete investigation of the EP comprising of the whole set
of the HD materials and allied sciences is really a sea and permanently enjoys the
domain of impossibility theorems.
Preface
ix
It is well-known
that the classical
h
. i equation of the photo-emitted current density
2
is [10] J 4pa0 emc gv kB T h3 exphv /=kB T (where a0 e; mc ; gv ; kB ;
T; h; ht and / and are the probability of photoemission, electron charge, effective
electron mass at the edge of the conduction band, valley degeneracy, the Boltzmann
constant, temperature, the Planck constant, incident photon energy along z-axis and
work function respectively). The afore-mentioned equation is valid for both the
charge carriers and in this conventional form it appears that, the photoemission
changes with the effective mass, temperature, work function and the incident
photon energy respectively. This relation holds only under the condition of carrier
non-degeneracy.
The EP has different values for different materials and varies with doping and
with external elds which creates quantization of the wave-vector space of the
carriers leading to various types of quantized structures. The nature of these variations has been studied in [435] and some of the signicant features are as follow:
1. The EP from bulk materials increases with the increase in doping.
2. The EP exhibits oscillatory dependence with inverse quantizing magnetic eld
because of the Shubnikov de Haas (SdH) effect.
3. The EP changes signicantly with the magnitude of the externally applied
quantizing electric eld in electronic materials.
4. The EP from quantum conned Bismuth, nonlinear optical, III-V, II-VI and IVVI materials oscillate with nano-thickness in various manners which are totally
band structure dependent.
5. The nature of variations is signicantly inuenced by the energy band constants
of various materials having different band structures.
6. The EP has signicantly different values in quantum conned semiconductor
super-lattices and various other quantized structures.
It is well known that heavy doping and carrier degeneracy are the keys to unlock
the important properties of semiconductors and they are especially instrumental in
dictating the characteristics of Ohomic contacts and Schottky contacts respectively
[36]. It is an amazing fact that although the heavily doped semiconductors (HDS)
have been investigated in the literature but the study of the carrier transport in such
materials through proper formulation of the Boltzmann transport equation which
needs in turn, the corresponding HD carrier energy spectra is still one of the open
research problems.
It is well known that the band tails are being formed in the forbidden zone of
HDS and can be explained by the overlapping of the impurity band with the
conduction and valence bands [37]. Kane [38] and Bonch Bruevich [39] have
independently derived the theory of band tailing for semiconductors having
unperturbed parabolic energy bands. Kanes model [38] was used to explain the
experimental results on tunneling [40] and the optical absorption edges [41, 42] in
this context. Halperin and Lax [43] developed a model for band tailing applicable
only to the deep tailing states. Although Kanes concept is often used in the literature for the investigation of band tailing [44, 45], it may be noted that this model
Preface
[38, 46] suffers from serious assumptions in the sense that the local impurity
potential is assumed to be small and slowly varying in space coordinates [45]. In
this respect, the local impurity potential may be assumed to be a constant. In order
to avoid these approximations, we have developed in this book, the electron energy
spectra for HDS for studying the EP based on the concept of the variation of the
kinetic energy [37, 45] of the electron with the local point in space coordinates. This
kinetic energy is then averaged over the entire region of variation using a Gaussian
type potential energy. On the basis of the Ek dispersion relation, we have obtained
the electron statistics for different HDS for the purpose of numerical computation of
the respective EPs. It may be noted that, a more general treatment of many-body
theory for the DOS of HDS merges with one-electron theory under macroscopic
conditions [37]. Also, the experimental results for the Fermi energy and others are
the average effect of this macroscopic case. So, the present treatment of the oneelectron system is more applicable to the experimental point of view and it is also
easy to understand the overall effect in such a case [47]. In a HDS, each impurity
atom is surrounded by the electrons, assuming a regular distribution of atoms, and it
is screened independently [44, 46, 48]. The interaction energy between electrons
and impurities is known as the impurity screening potential. This energy is determined by the inter-impurity distance and the screening radius, which is known as
the screening length. The screening radius changes with the electron concentration
and the effective mass. Furthermore, these entities are important for HDS in
characterizing the semiconductor properties [49, 50] and the modern electronic
devices [44, 51]. The works on Fermi energy and the screening length in an n-type
GaAs have already been initiated in the literature [52, 53], based on Kanes model.
Incidentally, the limitations of Kanes model [38, 45], as mentioned above, are also
present in their studies.
At this point, it may be noted that many band tail models are proposed using the
Gaussian distribution of the impurity potential variation [38, 45]. From the very
start, we have used the Gaussian band tails to obtain the exact Ek dispersion
relations in HD non-linear optical, III-V, II-VI, Gallium Phosphide, Germanium,
Platinum Antimonide, stressed, IV-VI, Lead Germanium Telluride, Tellurium, II-V,
Zinc and Cadmium diphosphides, Bismuth Telluride, III-V, II-VI, IV-VI and HgTe/
CdTe quantum well HD super-lattices with graded interfaces under magnetic
quantization, III-V, II-VI, IV-VI and HgTe/CdTe HD effective mass super-lattices
under magnetic quantization, quantum conned effective mass super-lattices and
super-lattices of HD optoelectronic materials with graded interfaces respectively.
Our method is not at all related with the DOS technique as used in the aforementioned works. From the electron energy spectrum, one can obtain the DOS but
the DOS technique, as used in the literature cannot provide the Ek dispersion
relation. Therefore, our study is more fundamental than those in the existing literature, because the Boltzmann transport equation, which controls the study of the
charge transport properties of the semiconductor devices, can be solved if and only
if the Ek dispersion relation is known. We wish to note that the Gaussian function
for the impurity potential distribution has been used by many authors. It has been
Preface
xi
widely used since 1963 when Kane rst proposed it and we will also use the
Gaussian distribution for the present study.
This book, is divided into two parts (the rst and second parts contain four and
ten chapters respectively) and four Appendices, is partially based on our on-going
researches on the EP from HDS from 1990 and an attempt has been made to present
a cross section of the EP from wide range of HDS and their quantized-structures
with varying carrier energy spectra under various physical conditions. The rst
chapter deals with the inuence of quantum connement on the EP from nonparabolic HDS and at rst we study the EP from QWs of HD nonlinear optical
materials on the basis of a generalized electron dispersion law introducing the
anisotropies of the effective masses and the spin orbit splitting constants respectively together with the inclusion of the crystal eld splitting within the framework
of the k.p formalism. We will observe that the complex electron dispersion law in
HDS instead of real one occurs from the existence of the essential poles in the
corresponding electron energy spectrum in the absence of band tails. It may be
noted that the complex band structures have already been studied for bulk semiconductors and super lattices without heavy doping [54] and bears no relationship
with the complex electron dispersion law as formulated in this book. The physical
picture behind the existence of the complex energy spectrum in heavily doped nonlinear optical semiconductors is the interaction of the impurity atoms in the tails
with the splitting constants of the valance bands. The more is the interaction, the
more the prominence of the complex part than the other case. In the absence of band
tails, there is no interaction of the impurity atoms in the tails with the spin orbit
constants and consequently, the complex part vanishes. Besides, the complex
spectra are not related to same evanescent modes in the band tails and the conduction bands. One important consequence of the HDS forming band tails is that
the effective mass exists in the forbidden zone, which is impossible without the effect
of band tailing. In the absence of band tails, the effective mass in the band gap of
semiconductors is innity. Besides, depending on the type of the unperturbed
carrier energy spectrum, the new forbidden zone will appear within the normal
energy band gap for HDS.
The results of HD III-V (e.g. InAs, InSb, GaAs etc.), ternary (e.g. Hg1-xCdxTe),
quaternary (e.g. In1-xGaxAs1-yPy lattice matched to InP) compounds form a special
case of our generalized analysis under certain limiting conditions as stated already.
The EP from HD QWs of II-VI, IV-VI, stressed Kane type semiconductors, Te,
GaP, PtSb2,, Bi2Te3, Ge, and GaSb has also been investigated by formulating the
respective appropriate HD energy band structure. The importance of the aforementioned semiconductors has also been described in the same chapter. In the
absence of band tails and under the condition of extreme carrier degeneracy
together with certain limiting conditions, all the results for all the EPs from all the
HD QWs of Chap. 1 get simplied into the form [10] J2D a0 egv =2hd2z
nP
zmax
h2
nz EF2D 2m
nz p=dz 2 (where dz is the lm thickness along z direction, nz is
c
nzmin
the size quantum number along z direction and EF2D is the Fermi energy in the
xii
Preface
presence of size quantization as measured from the edge of the conduction band in
the vertically upward direction in the absence of any quantization) exhibiting the
necessary mathematical compatibility test. In Chaps. 2 and 3 the EP from nano
wires (NWs) and quantum boxes (QBs) of all the materials of Chap. 1 have
respectively been investigated.
With the advent of modern experimental techniques of fabricating nano-materials, it is possible to grow semiconductor super-lattices (SLs) composed of alternative layers of two different degenerate layers with controlled thickness [55].
These structures have found wide applications in many new devices such as photodiodes [56], photo-resistors [57], transistors [58], light emitters [59], tunneling
devices [60], etc. [6172]. The investigations of the physical properties of narrow
gap SLs have increased extensively, since they are important for optoelectronic
devices and also since the quality of hetero-structures involving narrow gap
materials has been greatly improved. It is well known that Keldysh [73] rst
suggested the fundamental concept of a super-lattice (SL), although it was successfully experimental realized by Esaki and Tsu [74]. The importance of SLs in the
eld of nano-electronics has already been described in [7577]. The most extensively studied III-V SL is the one consisting of alternate layers of GaAs and
Ga1-xAlxAs owing to the relative ease of fabrication. The GaAs layers forms
quantum wells and Ga1-xAlxAs form potential barriers. The III-V SLs are attractive
for the realization of high speed electronic and optoelectronic devices [78]. In
addition to SLs with usual structure, SLs with more complex structures such as
II-VI [79], IV-VI [80] and HgTe/CdTe [81] SLs have also been proposed. The
IV-VI SLs exhibit quite different properties as compared to the III-V SL due to the
peculiar band structure of the constituent materials [82]. The epitaxial growth of
II-VI SL is a relatively recent development and the primary motivation for studying
the mentioned SLs made of materials with the large band gap is in their potential for
optoelectronic operation in the blue [82]. HgTe/CdTe SLs have raised a great deal
of attention since 1979, when as a promising new materials for long wavelength
infrared detectors and other electro-optical applications [83]. Interest in Hg-based
SLs has been further increased as new properties with potential device applications
were revealed [84]. These features arise from the unique zero band gap material
HgTe [85] and the direct band gap semiconductor CdTe which can be described by
the three band mode of Kane [86]. The combination of the aforementioned materials with specied dispersion relation makes HgTe/CdTe SL very attractive,
especially because of the possibility to tailor the material properties for various
applications by varying the energy band constants of the SLs. In addition to it, for
effective mass SLs, the electronic sub-bands appear continually in real space [87].
We note that all the aforementioned SLs have been proposed with the
assumption that the interfaces between the layers are sharply dened, of zero
thickness, i.e., devoid of any interface effects. The SL potential distribution may be
then considered as a one dimensional array of rectangular potential wells. The
aforementioned advanced experimental techniques may produce SLs with physical
interfaces between the two materials crystallo-graphically abrupt; adjoining their
interface will change at least on an atomic scale. As the potential form changes from
Preface
xiii
a well (barrier) to a barrier (well), an intermediate potential region exists for the
electrons. The inuence of nite thickness of the interfaces on the electron dispersion law is very important, since the electron energy spectrum governs the
electron transport in SLs.
In this context, it may be noted that the effects of quantizing magnetic eld (B)
on the band structures of compound semiconductors are most striking than that of
the parabolic one and are easily observed in experiments. A number of interesting
physical features originate from the signicant changes in the basic energy wave
vector relation of the carriers caused by the magnetic eld. The valuable information could also be obtained from experiments under magnetic quantization
regarding the important physical properties such as Fermi energy and effective
masses of the carriers, which affect almost all the transport properties of the electron
devices [88] of various materials having different carrier dispersion relations [89].
In Chap. 4, the magneto EP from III-V, II-VI, IV-VI, HgTe/CdTe and strained layer
quantum well heavily doped super-lattices (QWHDSLs) with graded interfaces will
be studied. Besides the magneto EP from III-V, II-VI, IV-VI, HgTe/CdTe and
strained layer quantum well HD effective mass super-lattices respectively has been
explored and the same from the quantum dots of the aforementioned HD SLs has
further been investigated in the same chapter.
It is worth remarking that, in the methods as given in the literature, the physics of
photoemission has been incorporated in the lower limit of the photoemission integral
and assuming that the band structure of the bulk materials becomes an invariant
quantity in the presence of photo-excitation necessary for Einsteins photoelectric
effect. The basic band structure of semiconductors changes in the presence of intense
external light waves in a fundamental way, which has been incorporated mathematically through the expressions of the DOS function on the basis of a newly
formulated electron dispersion law and the velocity along the direction of photoemission respectively in addition to the appropriate xation of the lower limit of the
photo-emission integral for the purpose of investigating the EP. The second part of
the book investigates the EP from HD III-V semiconductors and their quantized
counter parts. In Chap. 5, we study the EP from HD Kane type semiconductors on
the basis of the newly formulated electron energy spectrum in the presence of intense
light waves. An important concept highly relevant to the measurement of band-gap
in HD electronic materials in the presence of external photo-excitation has also been
discussed in this perspective. Under the conditions of extreme degeneracy, the
invariant band structure concept in the presence of light waves and certain other
limiting constraints all the results of this chapter for the EP assumes the well-known
form [10] J 2pa0 emc gv =hv v0 2 ; v0 is the threshold frequency which indicates the fact current density is independent of temperature and when the energy of
light quantum is much greater than the work function the material, the condition of
extreme degeneracy is reached.
In Chap. 6, the EP has been investigated under magnetic quantization from HD
Kane type materials on the basis of the concept as presented in Chap. 5. Chapter 7
covers the study of the EP from QWs, NWs and QBs of HD optoelectronic
xiv
Preface
materials as an extension of the new dispersion relations of the bulk HD materials

as investigated in Chap. 5. In Chap. 8, the magneto EP from HD effective mass
super lattices, quantum well, quantum well wire, and quantum dot HD effective
mass super-lattices have been investigated by formulating the appropriate electron
dispersion laws. The experimental aspects of EP are extremely wide and it is
virtually impossible even to highlight the major developments in a chapter. For the
purpose of condensed presentation, the experimental aspects of EP from different
nano-structured materials have been discussed in Chap. 9 which also contains few
important related applications of the content of this book. The Chap. 10 contains the
conclusion and the scope for future research.
The Appendix A studies the EP from HDnonlinear optical, III-V, IV-VI, stressed
compounds, n-Te,n-GaP, PtSb2, Bismuth Telluriden-Ge,Gallium AntimonideII-V
semiconductors and Lead Germanium Telluride under magnetic quantization
respectively. In this Appendix we shall observe that the EEM depends on Landau
quantum number in addition toFermi energyand the other system constants due to
the specic band structures of theHD materialstogether with the fact EEM exist in
the band gap due to the presence of nite scattering potential as noted already.
Thus we present a very simplied analysis of the EP from HD non-parabolic
semiconductors under magnetic quantization, which is a big topic of research by its
own right.
In Appendix B, the magneto EP from HD III-V, II-VI, IV-VI, HgTe/CdTe and
strained layer super-lattices with graded interfaces and the HD effective mass
super-lattices of the aforementioned materials have been investigated.
It is worth remarking that the inuence of crossed electric and quantizing
magnetic elds on the transport properties of semiconductors having various band
structures are relatively less investigated as compared with the corresponding
magnetic quantization, although, the cross-elds are fundamental with respect to the
addition of new physics and the related experimental ndings. It is well known that
in the presence of electric eld Eo along x-axis and the quantizing magnetic eld
along z-axis, the dispersion relations of the conduction electrons in semiconductors
become modied and for which the electron moves in both the z and y directions.
The motion along y-direction is purely due to the presence of E0 along x-axis and in
the absence of electric eld, the effective electron mass along y-axis tends to innity
which indicates the fact that the electron motion along y-axis is forbidden. The
effective electron mass of the isotropic, bulk semiconductors having parabolic
energy bands exhibits mass anisotropy in the presence of cross elds and this
anisotropy depends on the electron energy, the magnetic quantum number, the
electric and the magnetic elds respectively, although, the effective electron mass
along z-axis is a constant quantity. In 1966, Zawadzki and Lax [90] formulated the
electron dispersion law for III-V semiconductors in accordance with the two band
model of Kane under cross elds conguration which generates the interest to study
this particular topic of solid state science in general [91]. The Appendix C investigates the EP under cross-eld conguration from HD nonlinear optical, III-V, IIVI, IV-VI and stressed Kane type semiconductors respectively. This appendix also
tells us that the EEM in all the cases is a function of the nite scattering potential,
Preface
xv
the magnetic quantum number and the Fermi energy even for HD semiconductors
whose bulk electrons in the absence of band tails are dened by the parabolic
energy bands.
With the advent of nano-devices, the build-in electric eld becomes so large that
the electron energy spectrum changes fundamentally instead of being invariant and
the Appendix D investigates the EP under intense electric eld from bulk specimens
of HD III-V, ternary and quaternary semiconductors. This appendix also explores
the inuence of electric eld on the EP on the basis of HD new dispersion law in for
QWs, NWs, QBs, under magnetic quantization, QWs under magnetic quantization
and effective mass HD super-lattices under magnetic quantization.
In these four Appendices no graphs together with results and discussions are
being presented since we feel that the readers should not lose a chance to enjoy the
complex computer algorithm to investigate the EP in the respective case generating
new physics and thereby transforming each Appendix into a short monograph by
considering various other important materials having different dispersion relations.
It is needless to say that this monograph is based on the iceberg principle [92]
and the rest of which will be explored by the researchers of different appropriate
elds. Since, there is no existing report devoted solely to the study of EP from HD
quantized structures to the best of our knowledge, we hope that the present book
will a useful reference source for the present and the next generation of the readers
and the researchers of materials and allied sciences in general. Since the production
of error free rst edition of any book from every point of view is a permanent
member in the domain of impossibility theorems, therefore in spite of our joint
concentrated efforts for couple of years together with the seasoned team of
Springer, the same stands very true for this monograph also. Various expressions
and a few chapters of this book have been appearing for the rst time in printed
form. The suggestions from the readers for the development of the book will be
highly appreciated for the purpose of inclusion in the future edition, if any. In this
book, from chapter one to till the end, we have presented 300 open research
problems for the graduate students, Ph.D. aspirants, researchers, engineers in this
pinpointed research topic. We strongly hope that alert readers of this monograph
will not only solve the said problems by removing all the mathematical approximations and establishing the appropriate uniqueness conditions, but also will
generate new research problems both theoretical and experimental and, thereby,
transforming this monograph into a solid book. Incidentally, our readers after
reading this book will easily understand that how little is presented and how much
more is yet to be investigated in this exciting topic which is the signature of
coexistence of new physics, advanced mathematics combined with the inner re for
performing creative researches in this context from the young scientists since like
Kikoin [93] we feel that A young scientist is no good if his teacher learns nothing
from him and gives his teacher nothing to be proud of. We emphatically write that
the problems presented here form the integral part of this book and will be useful
for the readers to initiate their own contributions on the EP from HDS and their
quantized counter parts since like Sakurai [94] we rmly believe The reader who
has read the book but cannot do the exercise has learned nothing. It is nice to note
xvi
Preface
that if we assign the alphabets A to Z, the positive integers from 1 to 26, chronologically, then the word ATTITUDE receives the perfect score 100 and is the vital
quality needed from the readers since attitude is the ladder on which all the other
virtues mount.
In this monograph, we have investigated various dispersion relations of different
HD quantized structures and the corresponding carrier statistics to study the concentration dependence of the EP from HD quantum conned materials. Besides, the
expressions of effective electron mass and the sub-band energy have been formulated throughout this monograph as a collateral study, for the purpose of in-depth
investigations of the said important pinpointed research topics. Thus, in this book,
the readers will get much information regarding the inuence of quantization in HD
low dimensional materials having different band structures. For the enhancement of
the materials aspect, we have considered various materials having the same dispersion relation to study the inuence of energy band constants of the different HDS
on EP. Although the name of the book is extreme specic, from the content, one
can easily infer that it should be useful in graduate courses on materials science,
condensed matter physics, solid states electronics, nano-science and technology and
solid-state sciences and devices in many Universities and the Institutions in addition
to both Ph.D. students and researchers in the aforementioned elds. Last but not the
least, we do hope that our humble effort will kindle the desire to delve deeper into
this fascinating and deep topic by any one engaged in materials research and
device development either in academics or in industries.
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Acknowledgments
I am grateful to A.N. Chakravarti, my thesis advisor and an ardent advocator of the

concept of theoretical minimum of Landau, who convinced a 21 years old Circuit
theorist that theoretical materials science, in general, is the hidden dual dance of
quantum mechanics, statistical mechanics together with advanced mathematical
techniques, and even to appreciate the incredible beauty, he not only placed a stiff
note for me to derive all the equations in the Monumental Course of Theoretical
Physics, the Classics of LandauLifshitz together with the two-volume classics of
Morse-Feshbach 40 years ago but also forced me to stay in the creative zone of
research. I express my gratitude to Late B.R. Nag of the Institute of Radio-physics
and Electronics of the University of Calcutta, to whom I am ever grateful as a
student and research worker, the Semiconductor Grandmaster of India for his three
books on semiconductor science in general and more than 200 research papers
(many of them are absolutely in honors class) which still re my imagination. I am
grateful to Late S.C. Dasgupta and M. Mitra (both of them were formidable Applied
Mathematicians with deep physical insight) of the Department of Mathematics
of the then Bengal Engineering College, Shibpur, Howrah (presently Indian Institute of Engineering Science and Technology) for teaching me deeply the various
methods of different branches of Applied Mathematics with special emphasis to
analytic number theory when I was pursuing the bachelor degree in the branch of
Electronics and Telecommunication Engineering 45 years ago. I am indebted to
Late C.K. Majumdar of the Department of Physics of the University of Calcutta to
light the re for Theoretical Physics. I am grateful to P.N. Singh, the Ex-Chairman
of NIT Agartala for his encouragement and enthusiastic support and the Director G.
Mugeraya for his keen academic insight and creation of congenial atmosphere to
promote research and higher learning among the faculty members bypassing all the
apparent difculties.
I am grateful to all my friends and colleagues for the last 40 years from my college
days till date for forming my inner re to solve independently the problems from ve
volumes Berkeley Physics Course, three volumes Sakurai, ten volumes of AddisionWesley Modular Series on Solid State Devices, two volumes Cohen-Tannoudji et.al.,
three volumes Edwards, three volumes Carslaw, six volumes Guillemin, three
xxi
xxii
Acknowledgments
volumes Tuttle, two volumes Scott, two volumes Budak, ve volumes Chen, ve
volumes Smirnov. It is curious to note that they are insisting me in the real sense of
the term to verify all the entries of Gradshteyn-Ryzhik and three volumes Bateman
manuscript project for the last 40 years. It may be noted that academic output of a nice
scholar is the response of a good quality RC coupled amplier in the mid-band zone
whereas the same for a ne research worker is the Diracs delta function. Incidentally,
I can safely say that I belong to neither as a consequence of the academic surroundings
which this life presents to me. I express my warm gratitude to H.L. Hartnagel, D.
Bimberg, W.L. Freeman and W. Schommers for various academic interactions
spanning over the last three decades. I am extremely grateful to Dr. Hari Singh Nalwa,
the President and CEO of American Scientic Publishers (www.aspbs.com) an ardent
supporter of the work of my research group. I remember the sweet memories of P.N.
Robson, I.M. Stephenson, V.S. Letokhov, J. Bodnar and K.F. Brennan with true
reverence for inspiring me with the ebullient idea that the publications of the research
monographs from internationally reputed Publishers containing innovative concepts
is of prime importance to excel in creative research activity.
Late P.T. Landsberg often expressed his desire to write a foreword for this book
in 2007 but due to previous other heavy academic and related commitments I was
unable to write this present monograph and his wife Mrs. Sophia Landsberg in her
letter of desperate sadness dated January 12, 2009 informed me that from 2008
onward due to Alzheimers disease her husband had to give up scientic works. In
21st December, 1974, A.N. Chakravarti, my mentor in my rst interaction with him
emphatically energized me that I must master Semiconductor Statistics (Pergamon
Press, London, 1962) by J.S. Blakemore for my initiation in semiconductor physics.
Later on I came in deep touch with K. Seeger, the well-known author of the book
Semiconductor Physics (Springer Series in Solid State Sciences, vol. 40, SpringerVerlag, Germany, 1982). The solid scientist Late P. N. Butcher has been a steady
hidden force since 1983 before his sad demise with respect to our scripting the series
in band structure dependent properties of nano-structured materials. He insisted me
repeatedly regarding it and to tune with his high rigorous academic standard, myself
with my prominent members of my research group wrote [1] as the rst one, [2] as
the second one, [3] as the third one, [4] as the fourth one, [5] as the fth one, [6] as
the sixth one, [7] as the seventh one and the present monograph as the eighth one.
Both P.T. Landsberg and P.N. Butcher visited the Institute of Radio Physics and
Electronics and immediately being a young research scholar I formed permanent
covalent bonds with them. Consequently at the fag end of my academic life,
I dedicate this monograph to the said four Semiconductor Grand Masters as a token
of my regards and gratitude to them individually for the long academic interactions
lasting for more than three decades.
I offer special thanks to Late N. Guhachoudhury of Jadavpur University for
instilling in me the thought that the academic output = ((desire X determination X
dedication)(false enhanced self ego pretending like a true friend although a real
unrecognizable foe)) although a thank you falls in the band gap regime for my
beloved better half See who really formed the backbone of my long unperturbed
research career, since in accordance with Sanatan Hindu Dharma, the fusion of
Acknowledgments
xxiii
marriage has transformed us to form a single entity, where the individuality is being
lost. I am grateful to all the members of my research group (from 1983 till date) for
not only quantum conning me in the innitely deep quantum wells of Ramanujan
and Rabindranath but also inspiring me to teach quantum mechanics and related
topics from the eight volumes classics of Greiner et al.
From the ash back of my memory I wish to offer my indebtedness to
M. Mondal, the rst member of my research team who in 1983 joined with me to
complete his Ph.D. work under my guidance when R.K. Poddar, the then Vicechancellor of the University of Calcutta selected me as a Lecturer (presently
Assistant Professor) of the famous Department of Radio Physics and Electronics. In
1987, S.K. Sen, the then Vice-chancellor of Jadavpur University accepted me as the
Reader (presently Associate Professor) in the Department of Electronics and
Telecommunication Engineering and since then a ood of young researchers
(more than 12 in number consisting of B. Mitra, A. Ghoshal, D. Bhattacharya,
A.R. Ghatak,) around me created my research team and insisted me to work with
them at the @ of 16 hours per day including holidays in different directions of
research for the purpose of my creative conversion from an ordinary engineer to a
360 research scientist and consequently I enjoyed the high rate of research publications in different reputed International journals in various aspects of band
structure dependent properties of quantized structures. It is nice to note that the said
young talented researchers obtained their respective Ph.D. degree under my direct
supervision. Incidentally in 1994, R.K. Basu, the then Vice-chancellor of the
University of Calcutta selected me as a Professor in the Department of Electronic
Science and another ood of research over helmed me in a new direction of
materials science. The persons responsible for this change include S. Datta,
S. Sengupta, A. Ali. The 11th and 12th names of this golden series are
S. Bhattacharya and D. De respectively who, in turn formed permanent covalent
bond with me not only with respect to research (S. Bhattacharya and D. De are
respectively the co-authors of seven and two Monographs in different series of
Springer) but also in all aspects of life in general. Recently, this teacher-student
relationship has been interchanged with respect to these two creative young persons
and both of them are not only the rst two hidden authors of this monograph but
being the experts of numerical simulations of electron transport in nano-devices
they also carried out the complex computer programming for the plots as used here.
It is curious to note that after serving 18 years as a Professor in the Department
of Electronic Science, in 2012 P.K. Bose, the then Director of the National Institute
of Technology, Agartala requested me to join as a Professor in the Department of
Electronics and Communication Engineering. Being my life-long friend, I accepted
his offer and more than ten young scholars around me are again directing my
research in the last phase of my life in an altogether new direction. In my 30+ years
of teaching life (I have the wide experience of teaching Physics, Mathematics,
Applied Mechanics(from engineering statics up to nonlinear mechanics including
indeterminate structures) and 70 % of the courses of Electronics and Telecommunication and Electrical Engineering respectively) and 40+ years of research life
(mostly in Materials Science, Nano-science and Number Theory), I have nally
xxiv
Acknowledgments
realized that the research without teaching is body without blood and teaching
without research is body without brain although my all time hero, creatively prolic
number theorist Godfrey Harold Hardy in his classic book entitled A Mathematicians Apology (Cambridge University Press, 1990) tells us I hate teaching.
I must express my gratitude to S. Debbarma, of Computer Science and Engineering
Department of my present working place, one of the strong members of my research
group, for offering important suggestions for the condensed presentation of this
monograph. I offer special thanks to K. Sarkar, P. Bhardwaj, N. Debbarma, R. Das and
other members of my research team for placing their combined effort towards the
development of this book in the DO-LOOP of a computer and critically reading the
manuscript in its last phase before sending it to C. Ascheron, Executive Editor
Physics, Springer-Verlag. Last but not the least; I am grateful for ever to our life long
time tested friend S. Sanyal, Principal, Lake School for Girls, Kolkata for not only
motivating me at rather turbulent moments of my academic carrier but also instilling in
me the concept that the ratio of total accumulated knowledge in my chosen eld of
research to my own contribution in my topic of research tends to innity at any time.
As always, myself with the members of my research team are grateful to
C. Ascheron, Executive Editor Physics, Springer Verlag, in the real sense of the
term for his inspiration and priceless technical assistance from the very start of our
rst monograph from Springer. I am grateful to Peter Wle, Editor Condensed
matter theory of Springer Tract in Modern Physics for accepting this book. We owe
a lot to A. Duhm, Associate Editor Physics, Springer, and E. Suer, assistant to
Ascheron. Naturally, the author is responsible for non-imaginative shortcomings.
I rmly believe that our Mother Nature has propelled this Project in her own unseen
way in spite of several insurmountable obstacles.
Agartala, India, July 2014
References
1. K.P. Ghatak, S. Bhattacharya, D. De, Einstein Relation in Compound Semiconductors and their
Heterostructures. Springer Series in Materials Science, vol. 116 (Springer, Heidelberg, 2009)
2. K.P. Ghatak, D. De, S. Bhattacharya, Photoemission from Optoelectronic Materials and their
Nanostructures. Springer Series in Nanostructure Science and Technology (Springer,
Heidelberg, 2009)
3. K.P. Ghatak, S. Bhattacharya, Thermo Electric Power in Nanostructured Materials Strong
Magnetic Fields. Springer Series in Materials Science, vol. 137 (Springer, Heidelberg, 2010)
4. S. Bhattacharya, K.P. Ghatak, Fowler-Nordheim Field Emission: Effects in Semiconductor
Nanostructures. Springer Series in Solid state Sciences, vol. 170 (Springer, Heidelberg, 2012)
5. S. Bhattacharya, K.P. Ghatak, Effective Electron Mass in Low Dimensional Semiconductors.
Springer Series in Materials Sciences, vol. 167 (Springer, Heidelberg, 2013)
6. K.P. Ghatak, S. Bhattacharya, Debye Screening Length: Effects of Nanostructured Materials.
Springer Tracts in Modern Physics, vol. 255 (Springer, Heidelberg, 2014)
7. K.P. Ghatak, S. Bhattacharya, Heavily Doped 2D Quantized Structures and the Einstein
Relation. Springer Tracts in Modern Physics, vol. 260 (Springer, Heidelberg, 2014 in press)
Contents
Part I
Inuence of Quantum Connement on the EP

from Non-Parabolic Semiconductors
The EP from Quantum Wells (QWs) of Heavily Doped (HD)

Non-parabolic Semiconductors . . . . . . . . . . . . . . . . . . . . . .
1.1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.2 Theoretical Background . . . . . . . . . . . . . . . . . . . . . . . .
1.2.1 The EP from QWs of HD Non-linear Optical
Semiconductors . . . . . . . . . . . . . . . . . . . . . . .
1.2.2 The EP from QWs of HD III-V Semiconductors .
1.2.3 The EP in QWs of HD II-VI Semiconductors . . .
1.2.4 The EP from QWs of HD IV-VI Semiconductors
1.2.5 The EP from QWs of HD Stressed Kane Type
Semiconductors . . . . . . . . . . . . . . . . . . . . . . .
1.2.6 The EP from QWs of HD Te . . . . . . . . . . . . . .
1.2.7 The EP from QWs of HD Gallium Phosphide . .
1.2.8 The EP in QWs of HD Platinum Antimonide . . .
1.2.9 The EP from QWs of HD Bismuth Telluride . . .
1.2.10 The EP from QWs of HD Germanium. . . . . . . .
1.2.11 The EP from QWs of HD Gallium Antimonide .
1.3 Results and Discussion . . . . . . . . . . . . . . . . . . . . . . . .
1.4 Open Research Problems . . . . . . . . . . . . . . . . . . . . . . .
The EP from Nano Wires (NWs) of Heavily Doped (HD)
Non-parabolic Semiconductors . . . . . . . . . . . . . . . . . . . .
2.1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2.2 Theoretical Background . . . . . . . . . . . . . . . . . . . . . .
2.2.1 The EP from Nano Wires of HD Nonlinear
Optical Semiconductors . . . . . . . . . . . . . . . .
2.2.2 The EP from Nano Wires of HD III-V
Semiconductors . . . . . . . . . . . . . . . . . . . . .
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xxvi
Contents
2.2.3
The EP from Nano Wires of HD II-VI

Semiconductors . . . . . . . . . . . . . . . . . . . . . .
2.2.4 The EP from Nano Wires of HD IV-VI
Semiconductors . . . . . . . . . . . . . . . . . . . . . .
Semiconductors . . . . . . . . . . . . . . . . . . . . . .
2.2.6 The EP from Nano Wires of HD Te . . . . . . . .
2.2.7 The EP from Nano Wires of HD GaP . . . . . .
2.2.8 The EP from Nano Wires of HD PtSb2 . . . . . .
2.2.9 The EP from Nano Wires of HD Bi2Te3 . . . . .
2.2.10 The EP from Nano Wires of HD Ge . . . . . . . .
2.2.11 The EP from Nano Wires of HD GaSb . . . . . .
2.3 Results and Discussion . . . . . . . . . . . . . . . . . . . . . . .
2.4 Open Research Problems . . . . . . . . . . . . . . . . . . . . . .
References. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3
The EP from Quantum Box of Heavily Doped (HD)

Non-parabolic Semiconductors . . . . . . . . . . . . . . . . . . . . .
3.1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3.2 Theoretical Background . . . . . . . . . . . . . . . . . . . . . . .
3.2.1 The EP from QB of HD Nonlinear Optical
Semiconductors . . . . . . . . . . . . . . . . . . . . . .
3.2.2 The EP from QB of HD III-V Semiconductors .
3.2.3 The EP from QB of HD II-VI Semiconductors .
3.2.4 The EP from QB of HD IV-VI Semiconductors
3.2.5 The EP from QB of HD Stressed Kane Type
Semiconductors . . . . . . . . . . . . . . . . . . . . . .
3.2.6 The EP from QB of HD Te . . . . . . . . . . . . . .
3.2.7 The EP from QB of HD Gallium Phosphide. . .
3.2.8 The EP from QB of HD Platinum Antimonide .
3.2.9 The EP from QB of HD Bismuth Telluride . . .
3.2.10 The EP from QB of HD Germinium . . . . . . . .
3.2.11 The EP from QB of HD Gallium Antimonide. .
3.3 Results and Discussion . . . . . . . . . . . . . . . . . . . . . . .
3.4 Open Research Problems . . . . . . . . . . . . . . . . . . . . . .
References. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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The EP from Heavily Doped (HD) Quantized Superlattices. .

4.1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4.2.1 The Magneto EP from III-V Quantum Well HD
Superlattices with Graded Interfaces . . . . . . . . .
4.2.2 The Magneto EP from II-VI Quantum Well HD
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Contents
xxvii
4.2.3
The Magneto EP from IV-VI Quantum Well HD

4.2.4 The Magneto EP from HgTe/CdTe Quantum
Well HD Superlattices with Graded Interfaces . .
4.2.5 The Magneto EP from Strained Layer Quantum
Well HD Superlattices with Graded Interfaces . .
Effective Mass Super Lattices. . . . . . . . . . . . . .
4.2.8 The Magneto EP from IV-VI Quantum Well HD
4.2.9 The Magneto EP from HgTe/CdTe Quantum
Well HD Effective Mass Super Lattices . . . . . . .
4.2.10 The Magneto EP from Strained Layer Quantum
Well HD Effective Mass Super Lattices . . . . . . .
4.2.11 The EP from III-V Quantum Dot HD
4.2.12 The EP from II-VI Quantum Dot HD
4.2.13 The EP from IV-VI Quantum Dot HD
4.2.14 The EP from HgTe/CdTe Quantum Dot HD
4.2.15 The EP from Strained Layer Quantum Dot HD
4.2.16 The EP from III-V Quantum Dot HD
Effective Mass Superlattices . . . . . . . . . . . . . . .
4.2.17 The EP from Heavily Doped Effective
Mass Quantum Dot II-VI Super-Lattices . . . . . .
Mass Quantum Dot IV-VI Super-Lattices. . . . . .
Mass HgTe/CdTe Quantum Dot Super-Lattices. .
4.2.20 The EP from Heavily Doped Strained Layer
Effective Mass Quantum Dot Super-Lattices. . . .
4.4 Open Research Problem. . . . . . . . . . . . . . . . . . . . . . . .
References. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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xxviii
Contents
Part II
The EP from HD III-V Semiconductors

and Their Quantized Counter Parts
The EP from HD Kane Type Semiconductors . . . . . . . . . . .

5.1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5.2.1 The Formulation of the Electron Dispersion Law
in the Presence of Light Waves in HD III-V,
Ternary and Quaternary Semiconductors . . . . . .
5.2.2 The EP in the Presence of Light Waves in HD
III-V, Ternary and Quaternary Semiconductors . .
5.4 Open Research Problems . . . . . . . . . . . . . . . . . . . . . . .
References. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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The EP from HD Kane Type Materials Under Magnetic

Quantization. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6.1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6.2 Theoretical Background . . . . . . . . . . . . . . . . . . . . .
6.3 Results and Discussion . . . . . . . . . . . . . . . . . . . . .
6.4 Open Research Problems . . . . . . . . . . . . . . . . . . . .
Reference . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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The EP from QWs, NWs and QBs of HD Optoelectronic

Materials . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
7.1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
7.2 Theoretical Background . . . . . . . . . . . . . . . . . . . . . . . . . .
7.2.1 The EP from HD QWs of Optoelectronic Materials.
7.2.2 The EP from HD NWs of Optoelectronic Materials.
7.2.3 The EP from QB of HD Optoelectronic Materials . .
7.3 Results and Discussion . . . . . . . . . . . . . . . . . . . . . . . . . .
7.4 Open Research Problems . . . . . . . . . . . . . . . . . . . . . . . . .
Reference . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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The EP from HD Effective Mass Super Lattices

of Optoelectronic Materials . . . . . . . . . . . . . . . . . . . . .
8.1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8.2 Theoretical Background . . . . . . . . . . . . . . . . . . . .
8.2.1 The Magneto EP from HD QWs Effective
Mass Super Lattices . . . . . . . . . . . . . . . .
8.2.2 The EP from HD NW Effective
Mass Super Lattices . . . . . . . . . . . . . . . .
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xxix
8.2.3
The EP from HD QB Effective

Mass Super Lattices . . . . . . . . . . . .
8.2.4 The Magneto EP from HD Effective
Mass Super Lattices . . . . . . . . . . . .
8.3 Results and Discussion . . . . . . . . . . . . . . . .
8.4 Open Research Problems . . . . . . . . . . . . . . .
Reference . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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Few Related Applications and Brief Review

of Experimental Results . . . . . . . . . . . . . . .
9.1 Introduction . . . . . . . . . . . . . . . . . . . .
9.2 Different Related Applications . . . . . . .
9.3 Brief Review of Experimental Results . .
9.4 Open Research Problem. . . . . . . . . . . .
References. . . . . . . . . . . . . . . . . . . . . . . . . .
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10 Conclusion and Future Research . . . . . . . . . . . . . . . . . . . . . . . . .

References. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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11 Appendix A: The EP from HDS Under Magnetic

Quantization. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11.1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11.2 Theoretical Background . . . . . . . . . . . . . . . . . . . . . . . . . . .
11.2.1 The EP from HD Nonlinear Optical Semiconductors
under Magnetic Quantization . . . . . . . . . . . . . . . . .
11.2.2 The EP from HD Kane Type III-V, Ternary
and Quaternary Semiconductors Under Magnetic
Quantization. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11.2.3 The EP from HD II-VI Semiconductors
11.2.4 The EP from HD IV-VI Semiconductors
11.2.5 The EP from HD Stressed Kane Type
Semiconductors Under Magnetic Quantization . . . . .
11.2.6 The EP from HD Tellurium Under Magnetic
Quantization. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11.2.7 The EP from HD Gallium Phosphide
11.2.8 The EP from HD Platinum Antimonide
11.2.9 The EP from HD Bismuth Telluride
11.2.10 The EP from HD Germanium under Magnetic
Quantization. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
.
.
403
403
404
404
407
414
415
423
424
425
426
427
428
xxx
Contents
11.2.11 The EP from HD Gallium Antimonide

Under Magnetic Quantization . . . . . . . . . . . .
11.2.12 The EP from HD II-V Semiconductors
under Magnetic Quantization . . . . . . . . . . . .
11.2.13 The EP from HD Lead Germanium Telluride
under Magnetic Quantization . . . . . . . . . . . .
11.3 Open Research Problems . . . . . . . . . . . . . . . . . . . . .
References. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
......
430
......
431
......
......
......
433
434
439
12 Appendix B: The EP from Super-Lattices of HD

Semiconductors Under Magnetic Quantization . . . . . . . . . . .
12.1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
12.2.1 The EP from HD III-V Superlattices
with Graded Interfaces Under Magnetic
Quantization. . . . . . . . . . . . . . . . . . . . . . . . . .
12.2.2 The EP from HD II-VI Superlattices
Quantization. . . . . . . . . . . . . . . . . . . . . . . . . .
12.2.3 The EP from HD IV-VI Superlattices
Quantization. . . . . . . . . . . . . . . . . . . . . . . . . .
12.2.4 The EP from HD HgTe/CdTe Superlattices
Quantization. . . . . . . . . . . . . . . . . . . . . . . . . .
12.2.5 The EP from HD Stained Layer Superlattices
Quantization. . . . . . . . . . . . . . . . . . . . . . . . . .
12.2.6 The EP from HD IIIV Effective Mass
Superlattices Under Magnetic Quantization. . . . .
12.2.7 The EP from HD II-VI Effective Mass
12.2.8 The EP from HD IV-VI Effective Mass
12.2.9 The EP from HD HgTe/CdTe Effective
Mass Superlattices Under Magnetic Quantization
12.2.10 The EP from HD Stained Layer Effective
Mass Superlattices Under Magnetic Quantization
12.3 Open Research Problem. . . . . . . . . . . . . . . . . . . . . . . .
....
....
....
441
441
441
....
441
....
442
....
443
....
443
....
444
....
445
....
445
....
446
....
447
....
....
447
448
13 Appendix C: The EP from HDS and Their Nano-structures

Under Cross-Fields Conguration . . . . . . . . . . . . . . . . . . . . . . . .
13.1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
449
449
Contents

13.2.1 The EP from HD Nonlinear Optical
Semiconductors Under Cross-Fields Configuration .
13.2.2 The EP from HD Kane Type III-V Semiconductors
Under Cross-Fields Configuration . . . . . . . . . . . . .
under Cross-Fields Configuration . . . . . . . . . . . . .
13.2.5 The EP from HD Stressed Semiconductors
References. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
xxxi
..
450
..
450
..
453
..
457
..
459
..
..
..
461
464
465
..
..
..
467
467
467
..
467
..
474
..
475
..
477
..
478
..
479
..
..
..
480
483
486
Materials Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
487
Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
489
14 Appendix D: The EP from HD III-V, Ternary

and Quaternary Semiconductors Under Strong Electric Field . .
14.1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
14.2.1 The EP Under Strong Electric Field in HD III-V,
Ternary and Quaternary Materials . . . . . . . . . . . . .
14.2.2 The EP from the Presence of Quantizing
Magnetic Field Under Strong Electric Field
in HD III-V, Ternary and Quaternary Materials . . .
14.2.3 The EP from QWs of HD III-V, Ternary
and Quaternary Materials Under Strong
Electric Field . . . . . . . . . . . . . . . . . . . . . . . . . . .
14.2.4 The EP from NWs of HD III-V, Ternary
Electric Field . . . . . . . . . . . . . . . . . . . . . . . . . . .
14.2.5 The EP from QBs of HD III-V, Ternary
Electric Field . . . . . . . . . . . . . . . . . . . . . . . . . . .
14.2.6 The Magneto EP from QWs of HD III-V,
Ternary and Quaternary Materials Under Strong
Electric Field . . . . . . . . . . . . . . . . . . . . . . . . . . .
14.2.7 The Magneto EP from Effective Mass Superlattices
of HD III-V, Ternary and Quaternary Materials
Under Strong Electric Field . . . . . . . . . . . . . . . . .
Reference . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
About the Author
Professor Kamakhya Prasad Ghatak born in India in 1953, obtained the B.E
degree in Electronics and Telecommunication Engineering from the then Bengal
Engineering College Shibpur (Presently Indian Institute of Engineering Science and
Technology) of the University of Calcutta in 1974, the M.Tech degree from the
Institute of Radio Physics and Electronics of the University of Calcutta in 1976. He
obtained the Ph.D. (Tech) degree from the University of Calcutta in 1988 on the
basis of 27 published research papers in International peer-reviewed S.C.I. Journals
which is still a record in the said Institute. He joined as Lecturer in the Institute of
Radio Physics and Electronics of the University of Calcutta in 1983, Reader in the
Department of Electronics and Telecommunication Engineering of Jadavpur
University in 1987 and Professor in the Department of Electronic Science of the
University of Calcutta in 1994. After serving 18 years as a Professor in the said
Department, from March 2012, he has joined as a Professor in the Department of
Electronics and Communication Engineering of National Institute of Technology,
Agartala, Tripura and presently acting as Dean (Faculty Welfare) of the said
Institute. He was at the top of the merit list in all the cases respectively. Professor
K.P. Ghatak is the First Recipient of the Degree of Doctor of Engineering of
Jadavpur University in 1991 since the University inception in 1955 and in the same
year he received the Indian National Science Academy visiting fellowship to IITKharagpur. He is the principal co-author of more than 200 research papers on
Semiconductor Nano-science in eminent S.C.I. Journals and more than 50 research
papers in the Proceedings of SPIE and MRS of USA and many of his papers are
being cited many times. Professor Ghatak is the invited Speaker of SPIE, MRS,
etc., the referee, Editor and Associate Editor of different eminent Journals. He is the
supervisor of more than two dozens of Ph.D. candidates in various aspects of
materials and nano-sciences and many of them are working as Professor, Associate
Professor and Assistant Professor in different Universities and reputed Academic
Institutions. He is the principal co-author of the SEVEN research monographs
among them three from Springer series in Materials Science (Vols. 116, 137, 167),
one form Springer Series in Nanostructure Science and Technology, one form
Springer Series in Solid-State Sciences (Vol. 170), and two form Springer Tracts in
xxxiii
xxxiv
About the Author
Modern Physics (vols. 255, 260). The All Indian Council for Technical Education
has selected the rst Research and Development project in his life for the best
project award in Electronics and second best research project award considering all
the branches of Engineering for the year 2006. In 2011, the University Grant
Commission recommended a research project to him and placed him at the top in
the list of awardees. His present teaching interests are Non-Linear Network Analysis and Synthesis, Non-Linear Devices, Non-Linear Mechanics, Non-Linear
Integral and Partial Differential Equations and present research interests are nano
science and number theory respectively. His brief CV has been enlisted in many
biographical references of USA and UK. Professor Ghatak is the rm believer
of the principle of theoretical minimum of Landau and his vision, mission
and passion is to stay deeply in solitude. For more information, please log in to
http://www.amazon.com/Kamakhya-Prasad-Ghatak/e/B003B09OEY.
Symbols
a
a0 ; b0
A0
~
A
AE; nz
B
B2
b
c
C1
C2
DC44
DC456
Do
D B1
d0
D 0 E
D B E
DB E; k
dx ; dy ; dz
Dk
D?
d3 k
Band nonparabolicity parameter

The lattice constant
The widths of the barrier and the well for super-lattice
structures
The amplitude of the light wave
The vector potential
The area of the constant energy 2D wave vector space for
ultrathin lms
Quantizing magnetic eld
The momentum matrix element
Bandwidth
Velocity of light
Conduction band deformation potential
A constant which describes the strain interaction between the
conduction and valance bands
Second order elastic constant
Third order elastic constant
Crystal eld splitting constant
Interface width
Period of SdH oscillation
Super-lattice period
Density-of-states (DOS) function
DOS function in magnetic quantization
DOS function under the presence of light waves
Nano thickness along the x, y and z-directions
Spin-orbit splitting constants parallel
Spin-orbit splitting constants perpendicular to the C-axis
Isotropic spin-orbit splitting constant
Differential volume of the k space
Energy as measured from the center of the band gap
Trace of the strain tensor
xxxv
xxxvi
e0
e1
esc
DEg
j ej
E
Eo ; f0
Eg
Ei
Eki
EF
EFB
En
EFs
Fn
E
EFSL
~
es
EFQWSL
EFL
EFEL
EF2DL
EF1DL
Eg0
Erfc
Erf
EFh
hd
E
Fs
F V
Fj g
f0
f0i
gv
G
G0
g
h
^
H
^0
H
H E En
Symbols
Permittivity of free space

Semiconductor permittivity in the high frequency limit
Semiconductor permittivity
Increased band gap
Magnitude of electron charge
Total energy of the carrier
Electric eld
Band gap
Energy of the carrier in the ith band
Kinetic energy of the carrier in the ith band
Fermi energy
Fermi energy in the presence of magnetic quantization
Landau sub band energy
Fermi energy in the presence of size quantization
Fermi energy for nipis
Fermi energy in super-lattices
Polarization vector
Fermi energy in quantum wire super-lattices with graded
interfaces
Fermi energy in the presence of light waves
Fermi energyunder quantizing magnetic eld in the presence
of light waves
2D Fermi energy in the presence of light waves
1D Fermi energy in the presence of light waves
Un-perturbed band-gap
Complementary error function
Error function
Fermi energy of HD materials
Electron energy within the band gap
Surface electric eld
Gaussian distribution of the impurity potential
One parameter Fermi-Dirac integral of order j
Equilibrium Fermi-Dirac distribution function of the total
carriers
Equilibrium Fermi-Dirac distribution function of the carriers
in the ith band
Valley degeneracy
Thermoelectric power under classically large magnetic eld
Deformation potential constant
Magnitude of the band edge g-factor
Plancks constant
Hamiltonian
Perturbed Hamiltonian
Heaviside step function
Symbols
î; ^j and ^k
i
I
jcl
k
kB

k0
l; m;

n
Lx ; Lz
L0
LD
m1
m2
m3
m02
mi
mk
m?
mc
m?;1 ; mk;1
mr
mv
n
nx ; ny ; nz
n1D ; n2D
n2Ds ; n2Dw

n2Ds ;
n2Dw
ni
Nnipi E
N2DT E
N2D E; k
N1D E; k
xxxvii
Orthogonal triads
Imaginary unit
Light intensity
Conduction current contributed by the carriers of the ith band
Magnitude of the wave vector of the carrier
Boltzmanns constant
Wavelength of the light
Splitting of the two spin-states by the spin-orbit coupling and
the crystalline eld
Matrix elements of the strain perturbation operator
Sample length along x and z directions
Super-lattices period length
Debye screening length
Effective carrier masses at the band-edge along x direction
Effective carrier masses at the band-edge along y direction
The effective carrier masses at the band-edge along z direction
Effective- mass tensor component at the top of the valence
band (for electrons) or at the bottom of the conduction band
(for holes)
Effective mass of the ith charge carrier in the ith band
Longitudinal effective electron masses at the edge of the
conduction band
Transverse effective electron masses at the edge of the
conduction band
Isotropic effective electron masses at the edge of the
conduction band
Transverse and longitudinal effective electron masses at the
edge of the conduction band for the rst material in
super-lattice
Reduced mass
Effective mass of the heavy hole at the top of the valance band
in the absence of any eld
Landau quantum number
Size quantum numbers along the x, y and z-directions
1D and 2D carrier concentration
2D surface electron concentration under strong and weak
electric eld
Surface electron concentration under the strong and weak
electric eld quantum limit
Mini-band index for nipi structures
DOS function for nipi structures
2D DOS function
2D DOS function in the presence of light waves
1D DOS function in the presence of light waves
xxxviii
n0

n0
ni
P
Pn
Pk
P?
r
Si
~
s0
t
tc
T
si E

u1 ~
k;~
r ; u2 ~
k;~
r
V E
V0
V ~
r
x, y
zt
li
f2r
Cj 1
gg
x0
l0
"0 ,#0
Symbols
Total electron concentration

Electron concentration in the electric quantum limit
Carrier concentration in the ith band
Isotropic momentum matrix element
Available noise power
Momentum matrix elements parallel to the direction of crystal
axis
Momentum matrix elements perpendicular to the direction of
crystal axis
Position vector
Zeros of the Airy function
Momentum vector of the incident photon
Time scale
Tight binding parameter Surface electric eld
Absolute temperature
Relaxation time of the carriers in the ith band
Doubly degenerate wave functions
Volume of k space
Potential barrier encountered by the electron
Crystal potential
Alloy compositions
Classical turning point
Mobility of the carriers in the ith band
Average mobility of the carriers
Zeta function of order 2 r
Complete Gamma function
Normalized Fermi energy
Impurity scattering potential
Cyclotron resonance frequency
Angle
Bohr magnetron
Angular frequency of light wave
Spin up and down function
Part I
Influence of Quantum
Confinement on the EP from
Non-Parabolic Semiconductors
Chapter 1
The EP from Quantum Wells (QWs)

of Heavily Doped (HD) Non-parabolic
Semiconductors
1.1 Introduction
In recent years, with the advent of ne lithographical methods [13] molecular
beam epitaxy [4], organometallic vapor-phase epitaxy [5], and other experimental
techniques, the restriction of the motion of the carriers of bulk materials in one
(QWs, doping super-lattices, accumulation, and inversion layers), two (nanowires)
and three (quantum dots, magneto-size quantized systems, magneto inversion
layers, magneto accumulation layers, quantum dot super-lattices, magneto QW
super-lattices, and magneto doping superlattices) dimensions have in the last few
years, attracted much attention not only for their potential in uncovering new
phenomena in nano-science but also for their interesting quantum device applications [69]. In QWs, the restriction of the motion of the carriers in the direction
normal to the lm (say, the z direction) may be viewed as carrier connement in an
innitely deep 1D rectangular potential well, leading to quantization [known as
quantum size effect (QSE)] of the wave vector of the carriers along the direction of
the potential well, allowing 2D carrier transport parallel to the surface of the lm
representing new physical features not exhibited in bulk semiconductors [1014].
The low-dimensional hetero-structures based on various materials are widely
investigated because of the enhancement of carrier mobility [15]. These properties
make such structures suitable for applications in QWs lasers [16], hetero-junction
FETs [17, 18], high-speed digital networks [1922], high-frequency microwave
circuits [23], optical modulators [24], optical switching systems [25], and other
devices. The constant energy 3D wave-vector space of bulk semiconductors
becomes 2D wave-vector surface in QWs due to dimensional quantization. Thus,
the concept of reduction of symmetry of the wave-vector space and its consequence
can unlock the physics of low-dimensional structures. In this chapter, we study the
EP from QWs of HD non-parabolic semiconductors having different band structures
in the presence of Gaussian band tails. At rst we shall investigate the EP from
QWs of HD nonlinear optical compounds which are being used in nonlinear optics
K.P. Ghatak, Einsteins Photoemission, Springer Tracts in Modern Physics 262,
DOI 10.1007/978-3-319-11188-9_1
1 The EP from Quantum Wells (QWs)
and light emitting diodes [26]. The quasi-cubic model can be used to investigate the
symmetric properties of both the bands at the zone center of wave vector space of
the same compound. Including the anisotropic crystal potential in the Hamiltonian,
and special features of the nonlinear optical compounds, Kildal [27] formulated the
electron dispersion law under the assumptions of isotropic momentum matrix element and the isotropic spin-orbit splitting constant, respectively, although the anisotropies in the two aforementioned band constants are the signicant physical
features of the said materials [2830]. In Sect. 1.2.1, the EP from QWs of HD
nonlinear optical semiconductors has been investigated on the basis of newly formulated HD dispersion relation of the said compound by considering the combined
influence of the anisotropies of the said energy band constants together with the
inclusion of the crystal eld splitting respectively within the framework of ~
k ~
p
formalism. The III-V compounds nd applications in infrared detectors [31],
quantum dot light emitting diodes [32], quantum cascade lasers [33], QWs wires
[34], optoelectronic sensors [35], high electron mobility transistors [36], etc. The
electron energy spectrum of III-V semiconductors can be described by the threeand two-band models of Kane [3739], together with the models of Stillman et al.
[40], Newson and Kurobe [41] and, Palik et al. [42] respectively. In this context it
may be noted that the ternary and quaternary compounds enjoy the singular position
in the entire spectrum of optoelectronic materials. The ternary alloy Hg1x Cdx Te is
a classic narrow gap compound. The band gap of this ternary alloy can be varied to
cover the spectral range from 0.8 to over 30 m [43] by adjusting the alloy composition. Hg1x Cdx Te nds extensive applications in infrared detector materials and
photovoltaic detector arrays in the 812 m wave bands [44]. The above uses have
generated the Hg1xCdxTe technology for the experimental realization of high
mobility single crystal with specially prepared surfaces. The same compound has
emerged to be the optimum choice for illuminating the narrow sub-band physics
because the relevant material constants can easily be experimentally measured [45].
Besides, the quaternary alloy In1x Gax Asy P1y lattice matched to InP, also nds
wide use in the fabrication of avalanche photo-detectors [46], hetero-junction lasers
[47], light emitting diodes [48] and avalanche photodiodes [49], eld effect transistors, detectors, switches, modulators, solar cells, lters, and new types of integrated optical devices are made from the quaternary systems [50]. It may be noted
that all types of band models as discussed for III-V semiconductors are also
applicable for ternary and quaternary compounds. In Sect. 1.2.2, the EP from QWs
of HD III-V, ternary and quaternary semiconductors has been studied in accordance
with the corresponding HD formulation of the band structure and the simplied
results for wide gap materials having parabolic energy bands under certain limiting
conditions have further been demonstrated as a special case in the absence of bandtails and thus conrming the compatibility test. The II-VI semiconductors are being
used in nano-ribbons, blue green diode lasers, photosensitive thin lms, infrared
detectors, ultra-high-speed bipolar transistors, ber optic communications, microwave devices, solar cells, semiconductor gamma-ray detector arrays, semiconductor
detector gamma camera and allow for a greater density of data storage on optically
1.1 Introduction
addressed compact discs [5158]. The carrier energy spectra in II-VI compounds
are dened by the Hopeld model [59] where the splitting of the two-spin states by
the spin-orbit coupling and the crystalline eld has been taken into account. The
Sect. 1.2.3 contains the investigation of the EP from QWs of HD II-VI compounds.
Lead Chalcogenides (PbTe, PbSe, and PbS) are IV-VI non-parabolic semiconductors whose studies over several decades have been motivated by their importance in infrared IR detectors, lasers, light-emitting devices, photo-voltaic, and high
temperature thermo-electrics [6064]. PbTe, in particular, is the end compound of
several ternary and quaternary high performance high temperature thermoelectric
materials [6569]. It has been used not only as bulk but also as lms [7073], QWs
[74] super-lattices [75, 76] nanowires [77] and colloidal and embedded nanocrystals [7881], and PbTe lms doped with various impurities have also been
investigated [8289]. These studies revealed some of the interesting features that
had been seen in bulk PbTe, such as Fermi level pinning and, in the case of
superconductivity [90]. In Sect. 1.2.4, the 2D EP from QWs of HD IV-VI semiconductors has been studied taking PbTe, PbSe, and PbS as examples. The stressed
semiconductors are being investigated for strained silicon transistors, quantum
cascade lasers, semiconductor strain gages, thermal detectors, and strained-layer
structures [9194]. The EP from QWs of HD stressed compounds (taking stressed
n-InSb as an example) has been investigated in Sect. 1.2.5 The vacuum deposited
Tellurium (Te) has been used as the semiconductor layer in thin-lm transistors
(TFT) [95] which is being used in CO2 laser detectors [96], electronic imaging,
strain sensitive devices [97, 98], and multichannel Bragg cell [99]. Section 1.2.6
contains the investigation of EP from QWs of HD Tellurium. The n-Gallium
Phosphide (n-GaP) is being used in quantum dot light emitting diode [100], high
efciency yellow solid state lamps, light sources, high peak current pulse for high
gain tubes. The green and yellow light emitting diodes made of nitrogen-doped
n-GaP possess a longer device life at high drive currents [101103]. In Sect. 1.2.7,
the EP from QWs of HD n-GaP has been studied. The Platinum Antimonide
(PtSb2), nds application in device miniaturization, colloidal nanoparticle synthesis,
sensors and detector materials and thermo-photovoltaic devices [104106].
Section 1.2.8 explores the EP from QWs of HD PtSb2. Bismuth telluride (Bi2Te3)
was rst identied as a material for thermoelectric refrigeration in 1954 [107] and
its physical properties were later improved by the addition of bismuth selenide and
antimony telluride to form solid solutions. The alloys of Bi2Te3 are useful compounds for the thermoelectric industry and have been investigated in the literature
[108112]. In Sect. 1.2.9, the EP from QWs of HD Bi2Te3 has been considered.
The usefulness of elemental semiconductor Germanium is already well known since
the inception of transistor technology and, it is also being used in memory circuits,
single photon detectors, single photon avalanche diode, ultrafast optical switch,
THz lasers and THz spectrometers [113116]. In Sect. 1.2.10, the EP has been
studied from QWs of HD Ge. Gallium Antimonide (GaSb) nds applications in the
ber optic transmission window, hetero-junctions, and QWs. A complementary
hetero-junction eld effect transistor in which the channels for the p-FET device
and the n-FET device forming the complementary FET are formed from GaSb. The
band gap energy of GaSb makes it suitable for low power operation [117122]. In
Sect. 1.2.11, the EP from QWs of HD GaSb has been studied. Section 1.3 contains
the result and discussions pertaining to this chapter. The last Sect. 1.4 contains open
research problems.
1.2 Theoretical Background

1.2.1 The EP from QWs of HD Non-linear Optical
Semiconductors
The form of k. p matrix for nonlinear optical compounds can be expressed
extending Bodnar [28] as
H1
H
H2
H2
H1

1:1
where,
2
Eg0
6 0
H1 6
4P k
k z
0
0

2Dk =3
p

2D? =3
0
P k
p k z
2D? =3

d 13 Dk
0
3
0
07
7;
05
0
0
6 f;
H2 6
40
f;
f;
0
0
0
0
0
0
0
3
f;
0 7
7
0 5
0
in which Eg0 is the band gap in the absence of any eld, Pk and P? are the
momentum matrix elements parallel and perpendicular to the direction of crystal
axis respectively, d is the crystal eld splitting constant, Dk and D? are the spinorbit splitting constants parallel and perpendicular to the C-axis respectively, f;
p
p

P? = 2 kx iky and i 1. Thus, neglecting the contribution of the higher
bands and the free electron term, the diagonalization of the above matrix leads to
the dispersion relation of the conduction electrons in bulk specimens of nonlinear
optical semiconductors as
cE f1 Eks2 f2 Ekz2
where

cE EE Eg0 E Eg0 E Eg0 Dk

2
2
d E Eg0 Dk D2k D2? ;
3
9
1:2
E is the total energy of the electron as measured from the edge of the conduction
band in the vertically upward direction in the absence of any quantization,
ks2 kx2 ky2 ,

2 Eg0 Eg0 D?
h
1

D
d
E
E
g0
k E Eg0
2

3
2m? Eg0 3 D?

2
1 2
2
E Eg0 Dk Dk Dk ;
3
9

2

h Eg0 Eg0 Dk

2
i E Eg0 E Eg0 Dk ;
f2 E h

3
2mk Eg0 23 Dk
f1 E
= h/2, h is Plancks constant and mk and m? are the longitudinal and transverse
effective electron masses at the edge of the conduction band respectively.
Thus the generalized unperturbed electron energy spectrum for the bulk specimens of the nonlinear optical materials in the absence of band tails can be expressed
following (1.2) as

9
8

2 ab D2k D2? =

bk c? h2 ks2 <EaE 1bk E 1 abk
2 kz2
h
2 2
k
2

dE Dk D?
9
9 ck ck E 1 ;
2mk
b? ck 2m? :
ck
ck E 1
!
(
)
!
(
"
#)
2 2

2
2
D2k D2?
bk c ?
ak
ck
h ks
d Dk D?
d

2
2
2m?
b? c k
6Dk
ak E 1
6Dk
ck E 1
1:3
where,

2
bk 1=Eg Dk ; c? 1= Eg D? ; b? 1=Eg D? ;
3

2
ck 1= Eg Dk and a 1=Eg
3
The Gaussian distribution F(V) of the impurity potential is given by [123, 124]

1=2

FV pg2g
exp V=g2g
1:4
where, gg is the impurity scattering potential. It appears from (1.4) that the variance
parameter gg is not equal to zero, but the mean value is zero. Further, the impurities
are assumed to be uncorrelated and the band mixing effect has been neglected in
this simplied theoretical formalism.
We have to average the kinetic energy in the order to obtain the E-k dispersion
relation in nonlinear optical materials in the presence of band tails. Using the (1.3)
and (1.4), we get
2
3 2
3
E

2 2 ZE
2 2 Z
bk c? h ks
4h kz
FVdV5 4
FVdV5
2mk
b? ck 2m?
1
1
8 E
Z
<
E VaE V 1bk E V 1
FVdV
:
ck E V 1
1
2
3
ZE

ZE
abk
2
4d
E VFVdV D2k D2?

FVdV 5
9
ck
1
1
9
E

Z
=
2 abk 2
FVdV

Dk D2?
9 ck
ck E V 1 ;

("
2
1
! ZE
2
2
d Dk D?
FVdV
a
2
aE V 1
6Dk
1
9
3
! ZE
2
2
=
d Dk D?
FVdV

5

ck
2
6Dk
ck E V 1 ;
2 k s
h

2m?
1:5
bk c ?
b? c k
1
The (1.5) can be rewritten as [125128]

2 2
bk c?
h2 kz2
h ks
I1
I1
2mk
b? ck 2m?

abk
2
2 abk 2
dI4 D2k D2? I1
Dk D2? I6 ck
I3 ck
ck
9
9 ck
#)
!
( 2
)!
2 2 (
"
2
2
Dk D2?
bk c?
h ks

d Dk D?
d

aIa
ck Ick

2
2
2m?
b? ck
6Dk
6Dk
1:6
where,
ZE
I1
FVdV
1:7
1
ZE
I3 ck
1

E VaE V 1 bk E V 1

FVdV
ck E V 1
1:8
ZE
I4
E VFVdV
1:9
FVdV
aE V 1
1:10
1
ZE
Ia
1
Substituting E V x and x=gg t0 , we get from (1.7)

p
Z1

2 2
I1 exp E =gg = p
exp t02 2Et0 =gg dt0

Thus,
1 Erf E=gg
I1
2

1:11
where, Erf E=gg is the error function of E=gg .

From (1.9), one can write
p
I4 1=gg p
ZE
E V exp V 2 =g2g dV
1
9
8
>
>
ZE
=
<

E
1
V exp V 2 =g2g dV
1 Erf E=gg q
>
>
2
;
: pg2
1:12
g 1
After computing this simple integration, one obtains

Thus,

p

1 E
I4 gg exp E=g2g 2 p 1 Erf E=gg c0 E; gg
2
1:13
From (1.10), we can write

ZE exp V 2 =g2 dV
g
1
Ia q
pg2g 1 aE V 1
1:14
10
When,
V ! 1;
1
! 0 and exp V 2 =g2g ! 0;
aE V 1
Thus (1.14) can be expressed as

Z1

p
Ia 1=agg p
expt2 u t1 dt
1:15
1
where,
V
t and u
gg

1 aE
:
ag
It is well known that [129, 130]

Z1
WZ i=p
Z t1 expt2 dt
1:16
1
p
In which i 1 and Z, in general, is a complex number.
We also know [129, 130],
WZ expZ 2 ErfciZ
where,
ErfcZ 1 Erf Z:
Thus,
Erfciu 1 Erf iu
Since,
Erf iu Erf iu
Therefore,
Erfciu 1 Erf iu:
1:17
11
Thus,
p

Ia i p=agg expu2 1 Erf iu
1:18
We also know that [129, 130]

#
1
2 x2 X
expp2 =4
Erf x iy Erf x
1 cos2xy i sin2xy e
p
p2 4x2
p1

fp x; y igp x; y ex; y
1:19
ex
2px
2
!"
where,
fp x; y 2x 2x coshpy cos2xy p sinhpy sin2xy;
gp x; y 2x coshpy sin2xy p sinhpy cos2xy;
jex; yj 1016 jErf x iyj
Substituting x 0 and y u in (1.19), one obtains,

X
2i 1 expp2 =4
Erf iu
sinhpu
p p1
p
1:20
Therefore, one can write

Ia C21 a; E; gg iD21 a; E; gg
1:21
where,
"
#
#
1
X
2
expp2 =4
2
p expu
sinhpu and
C21 a; E; gg
p
agg p
P1
"p
#
p
2
D21 a; E; gg
expu :
agg
"
The (1.21) consists of both real and imaginary parts and therefore, Ia is complex,
which can also be proved by using the method of analytic continuation of the
subject Complex Analysis.
12
The integral I3 ck in (1.8) can be written as

!

abk
ack bk ck abk
bk
1
a
I3 ck
1

I4
I5
1

I1
ck
ck
ck
ck
c2k

bk
1
a
1
1:22
1
Ick

ck
ck
ck
where
ZE
E V2 FVdV
I5
1:23
1
From (1.23) one can write

2
!
!
! 3
ZE
ZE
ZE
2
1 4 2
V 2
V 2
V
I5 q E
exp
V exp
V 2 exp
dV 2E
dV
dV 5
g2g
g2g
g2g
pg2g
1
1
1
The evaluations of the component integrals lead us to write

gg E
E 2
I5 p exp
g2g
2 p
"
!#
1 2
E
gg 2E 2 1 Erf
h0 E; gg
4
gg
1:24
Thus combining the aforementioned equations, I3 ck can be expressed as

I3 ck A21 E; gg iB21 E; gg
1:25
where,
"
"
!
(
!)#
abk gg E
E 2
1 2
E
2
p exp
A21 E; g
gg 2E
1 Erf
4
gg
ck 2 p
g2g

9
8
"
#
gg exp E2 =g2g =
ack bk ck abk <E
p
1 Erf E=gg
:2
;
2 p
c2k
(
)

2
bk 1
bk
1
a
2
a
1 Erf E=gg 2 p 1
1
1
exp u1
1
ck
ck
ck
ck 2
ck
ck gg p
"
#

1
X
expp2 =4

sinhpu1 ;
p
p1
"
#

p

1 ck E
bk
p
a
u1
1
expu21 :
1
and B21 E; gg 2
ck gg
ck
ck
ck gg
13
Therefore, the combination of all the appropriate integrals together with algebraic manipulations leads to the expression of the dispersion relation of the conduction electrons of HD nonlinear optical materials forming Gaussian band tails as
h2 kz2
h2 ks2
1
2mk T21 E; gg 2m? T22 E; gg
1:26
where, T21 E; gg and T22 E; gg have both real and complex parts and are given by
"
#
T23 E; gg
;
T21 E; gg T27 E; gg iT28 E; gg ; T27 E; gg
T5 E; gg

abk
1
T23 E; gg A21 E; gg
dc0 E; gg D2k D2? 1 Erf E=gg
9
ck

2 abk

D2k D2? G21 ck ; E; gg ;
9 ck

1

X
2
expp2 =4
p exp u21
sinhpu1 ;
G21 E; gg
p
ck gg p
p1
1
T5 E; gg 1 Erf E=gg ;
2
"
#

T24 E; gg
2 abk 2
Dk D2? H21 ck ; E; gg ;
T28 E; gg
; T24 E; gg B21 E; gg
9 ck
T5 E; gg
" p
#

p
H21 ck ; E; gg
exp u21 ; T22 E; gg T29 E; gg iT30 E; gg ;
gg ck
T23 E; gg T25 E; gg T24 E; gg T26 E; gg
h
;
2
2 i
T25 E; gg T26 E; gg
"
!#
" 2
#!
"

Dk D2?
bk c ? 1
bk c?
E
d
1 Erf
T25 E; gg
ak C21 ak ; E; gg
gg
2
b? c k 2
b? c k
6Dk
#
" 2
#!

Dk D2?
bk c?
d
G21 ak ; E; gg ;
2
b?
6Dk
"
"
##
1
2 X
2
expp2 =4
sinhpu ;
C21 a; E; gg p exp u
a pgg
p
p1
!
!

2
2
2
2
bk c?
bk c? d Dk D?
d Dk D?

T26 E; gg
aD21 a; E; gg
H21 ck ; E; gg
2
b? ck
6Dk
b? 2
6Dk
T29 E; gg
and T30 E; gg
T24 E; gg T25 E; gg T23 E; gg T26 E; gg

h
2
2 i
T25 E; gg T26 E; gg
14
From (1.26), it appears that the energy spectrum in HD nonlinear optical

semiconductors is complex. The complex nature of the electron dispersion law
in HD semiconductors occurs from the existence of the essential poles in the
corresponding electron energy spectrum in the absence of band tails. It may be
noted that the complex band structures have already been studied for bulk semiconductors and super lattices without heavy doping [131, 132] and bears no relationship with the complex electron dispersion law as indicated by (1.26). The
physical picture behind the formulation of the complex energy spectrum in HDS is
the interaction of the impurity atoms in the tails with the splitting constants of the
valance bands. More is the interaction; more is the prominence of the complex part
than the other case. In the absence of band tails, gg ! 0, and there is no interaction
of the impurity atoms in the tails with the spin orbit constants. As a result, there
exist no complex energy spectrum and (1.26) gets converted into (1.2) when
gg ! 0. Besides, the complex spectra are not related to same evanescent modes in
the band tails and the conduction bands.
It is interesting to note that the single important concept in the whole spectra of
materials and allied sciences is the effective electron mass which is in disguise in
the apparently simple (1.26), and can, briefly be described as follows:
Effective electron mass: The effective mass of the carriers in semiconductors,
being connected with the mobility, is known to be one of the most important
physical quantities, used for the analysis of electron devices under different operating conditions [133]. The carrier degeneracy in semiconductors influences the
effective mass when it is energy dependent. Under degenerate conditions, only the
electrons at the Fermi surface of n-type semiconductors participate in the conduction process and hence, the effective mass of the electrons corresponding to the
Fermi level (EEM) would be of interest in electron transport under such conditions.
The Fermi energy is again determined by the electron energy spectrum and the
carrier statistics and therefore, these two features would determine the dependence
of the effective electron mass in degenerate n-type semiconductors under the degree
of carrier degeneracy. In recent years, various energy wave vector dispersion
relations have been proposed [134146] which have created the interest in studying
the effective mass in such materials under external conditions. It has, therefore,
different values in different materials and varies with electron concentration, with
the magnitude of the reciprocal quantizing magnetic eld under magnetic quantization, with the quantizing electric eld as in inversion layers, with the nanothickness as in UFs and nano wires and with superlattice period as in the quantum
conned superlattices of small gap semiconductors with graded interfaces having
various carrier energy spectra [147178].
15
The transverse and the longitudinal EEMs at the Fermi energy EFh of HD
nonlinear optical materials can, respectively, be expressed as

0

m? EFh ; gg m? T29 E; gg
1:27
EEFh
and

0
mk EFh ; gg mk T27 E; gg
1:28
EEFh
where EFh is the Fermi energy of HDS in the presence of band tails as measured
from the edge of the conduction band in the vertically upward direction in the
absence of band tails and the primes denote the differentiations of the differentiable
functions with respect to Fermi energy in the appropriate case.
In the absence of band tails gg ! 0 and we get
"
#
0
0
2

h
w
Efw
Eg

w
Efw
Eg

2
1
1
2
m? EF ; 0

2

2
fw2 Eg
1:29
EEF
and
mk EF ; 0
"
#
h2 w3 Efw1 Eg0 fw1 Egfw3 Eg0

2
fw3 Eg2
1:30
EEF
where EF is the Fermi energy as measured from the edge of the conduction band in
the vertically upward direction in the absence of any perturbation, w1 E
cE; w2 E f1 E and w3 E f2 E:
Comparing the aforementioned equations, one can infer that the effective
masses exist in the forbidden zone, which is impossible without the effect of
band tailing. For semiconductors, in the absence of band tails the effective
mass in the band gap is innity.
The DOS function is given by
NHD E; gg
2gv m?
q
2mk
3p2 h3

R11 E; gg cos w11 E; gg
1:31a
16
where,
22
R11 E; gg

0
q

T29 E; gg x E; gg
q
x E; gg

2 x E; gg
3

0 2

0 q

T30 E; gg y E; gg 7
q
T30 E; gg
y E; gg
5

2 y E; gg
2

0
0 q

T29 E; gg y E; gg
6
q
y E; gg
4 T29 E; gg

2 y E; gg
0
66
44 T29 E; gg
3 31=2

0 2
q

0
T30 E; gg x E; gg 7 7
q
T30 E; gg
x E; gg
5 5 ;

2 x E; gg

1

q

2
2
x E; gg T27 E; gg
;
T27 E; gg T28 E; gg
2

1 q

2
2

T27 E; gg and
T27 E; gg T28 E; gg
y E; gg
2
22

0 q

T29 E; gg
1 66
y E; gg q
w11 E; gg tan 44 T29 E; gg

2 y E; gg
3

0

0 q

T30 x E; gg 7
T30 E; gg
x E; gg q

5
2 x E; gg
2

0
0 q

T29 E; gg x E; gg
6
q
4 T29 E; gg
x E; gg

2 x E; gg
3 3

0 1

0 q

T30 y E; gg 7 7
T30 E; gg
y E; gg q

5 5:
2 y E; gg
The oscillatory nature
of the
DOS for HD nonlinear optical materials is apparent
from (1.31a). For, w11 E; gg
p, the cosine function becomes negative leading to
the negative values of the DOS. The electrons cannot exist for the negative values
of the DOS and therefore, this region is forbidden for electrons, which indicates that
in the band tail, there appears a new forbidden zone in addition to the normal
band gap of the semiconductor.
17
The use of (1.31a) leads to the expression of the electron concentration as
n0
where,
2gv m?
q "
2mk
3p2 h3
I11 EFh ; gg
s
X

LrI11 EFh ; gg
#
1:31b
r1

h
q

q

i
I11 EFh ; gg T29 E; gg x EFh ; gg T30 EFh ; gg y EFh ; gg ,
Lr 2kB T 2r 1 212r n2r oFermioenergy2r , r is the set of real positive integers

2r
whose upper s and n2r is the Zeta function of order 2r [129, 130].
The consequence of the photoelectric effect is the creation of the concept of
photoelectric current density (J) which, can, in turn, be written through the photoemission integral PI as [7]
J
a0 e
PI
4
1:31c
where,
Z1
PI

N E0 ; gg mz E 0 ; gg f EdE 0
1:31d
E0
E0 ni W hm; ni is obtained by substituting kx 0; ky 0 and kz 0 in

the dispersion relation, W is the electron afnity, E 0 E E0 ; E is the total energy
of the electron as measured from the edge of the conduction

band in the vertically
upward direction in the absence of any quantization, N E0 ; gg is the DOS function

at E E0 ; mz E0 ; gg is the velocity of the emitted electron along z-axis when,
E E 0 ; f E is the Fermi Dirac occupation probability factor and can be written in
this case as

E EFh 1
f E 1 exp
:
kB T
1:31e
Thus combining the appropriate equations, the EP from HD non-linear materials

can be expressed as
Z1
J M1 Real part of
E0

N1 E; gg dE0
1:31f
18
where
M1
a0 egv m?
2 3
3p
h

and N1 E; gg
q

T21 E0 ; gg

0 R11 E0 ; gg cosw11 E0 ; gg fE
0
T21 E ; gg
For dimensional quantization along z-direction, the dispersion relation of the 2D

electrons in this case can be written following (1.26) as
h2 nz p=dz 2
h2 ks2

1
2mk T21 E; gg
2m? T22 E; gg
1:32
where, nz 1; 2; 3; . . . and dz are the size quantum number and the nano-thickness
along the z-direction respectively.
The general expression of the total 2D DOS N2DT E can, in general, be
expressed as
N2DT E
nzmax

2gv X
oAE; nz
H E Enz
2
2p n 1 oE
1:33
where, gv is the valley degeneracy, AE; nz is the area of the

constant energy 2D
wave vector space and in this case it is for QWs, H E Enz is the Heaviside step
function and Enz is the corresponding sub-band energy. Using (1.32) and (1.33), the
expression of the N2DT E for QWs of HD nonlinear optical semiconductors can be
written as
N2DT E
nzmax
m? gv X
T 0 E; gg ; nz HE Enz D1
ph2 nz 1 1D
1:34

h2 nz p=dz 2
T22 E; gg and the sub band energies Enz D1
where, T1D E; gg ; nz 1 2m
T
E;g
g
k 21
in this case is given by the following equation
h2 nz p=dz 2

1
Enz D1 ; gg
2mk T21
1:35
Thus we observe that both the total DOS and sub-band energies of QWs of HD
nonlinear optical semiconductors are complex due to the presence of the pole in
energy axis of the corresponding materials in the absence of band tails.
19
The EEM in this case is given by

0
EF1HD ; gg ; nz
m EF1HD ; gg ; nz m? Real part of T1D
1:36
Thus, we observe that the EEM is the function of size quantum number and the
Fermi energy due to the combined influence of the crystal led splitting constant
and the anisotropic spin-orbit splitting constants respectively. Besides it is a
function of gg due to which the EEM exists in the band gap, which is otherwise
impossible.
Combining (1.34) with the Fermi-Dirac occupation probability factor, integrating between Enz D1 to innity and applying the generalized Sommerfelds lemma
[179], the 2D carrier statistics in this case assumes the form
n2D
nz max
m? gv X
Real part ofT1D EF1HD ; gg ; nz T2D EF1HD ; gg ; nz
p
h2 nz 1
where, T2D EF1HD ; gg ; nz
s
P
1:37
LrT1D EF1HD ; gg ; nz ; EF1HD is the Fermi energy
r1
in the presence of size quantization of the QWs of HD non-linear optical materials

as measured from the edge of the conduction band in the vertically upward direction
in the absence of any perturbation.
The photoelectric current density in QWs can, in general be written as
J2D
nzmax Z1
ao e X
N2D Ef Evz Enz dE

2dz nz
min
1:38a
Enz
where N2D E is the density-of-states function per sub band, vz Enz is the velocity
1
of the electron in the nth
z sub band, the factor 2 originates owing to the fact that only
half of the electron will migrate towards the surface and escape [36].
Thus combining the appropriate equations the J2D in this case assumes the form
J2D M2 Real part of
nX
zmax
nzmin
Z1
N2 E; gg ; nz dE
1:38b
Enz D1
where
q
2mk q
nzmin
dz T27 W hm; gg ;
hp
M2
a0 egm mk 12

dz ph2 2
20
and
N2 E; gg ; nz
q
T21 Enz D1 ; gg
0 E
T21
nz D1 ; gg
0
E; gg ; nz
fET1D
Therefore using (1.37) and (1.38b) we can study the EP in this case.
In the absence of band-tails, the 2D dispersion relation the EEM in the x-y plane
at the Fermi level, the total 2D DOS, the sub-band energy Enz1; the surface electron
concentration per unit area and the EP for QWs of non-linear optical materials in
the absence of band tails can, respectively, be written as
w1 E w2 Eks2 w3 Enz p=dz 2
2
h

m EFs ; nz
w2 EFs 2
2
"
1:39
2 )
nz p
w2 EFs fw1 EFs g0 fw3 EFs g0
dz
(
)
#
2
nz p
0
w1 EFs w3 EFs
fw2 EFs g
dz
1:40
"
2 )
nz p
N2DT E
w E
w2 E fw1 E g fw3 E g
dz
2p n 1 2
( z
#
1:41
2 )

nz p
0
w1 E w3 E
fw2 Eg H E Enz1
dz
zmax
g
nX
2
w1 Enz1 w2 Enz1 nz p=dz 2

zmax
gv X
T51 EFs ; nz T52 EFs ; nz
2p n 1
1:42
n2D
1:43
J2D M3
nX
zmax
nzmin
Z1
N3 E; nz dE
1:44
E nz 1
where
M3
w1 Enz1 1=2
w23 Enz1
a0 egv

; N3 E; nz

0
w3 Enz1
2p
hdz
w3 Enz1w1 Enz1 w03 Enz1w1 Enz1
nz p
nz p
w2 E2 w2 Effw1 E0 g fw3 Eg0 2 g fw1 E w3 E 2 gfw2 Eg0 fE;
dz
dz
21
w1 E cE; w2 E f 1 E; w3 E f 2 E, sub band energies EFs is the

Fermi energy in the 2-D sized quantized material in the presence of size quantization and in the absence of band-tails as measured from the edge of the conduction
band in the vertically upward direction in the absence of any quantization,
"
#
w1 EFs w3 EFs nz p=dz 2
T51 EFs ; nz
and
w2 EFs
T52 EFs ; nz
s
X
LrT51 EFs ; nz :
r1
In the absence of band-tails, the DOS for bulk specimens of non-linear optical
semiconductors is given by
D0 E gv 3p2 1 w4 E
1:45
" p
#
3 w1 E w1 E 0 w2 E 0 w1 E 3=2 1 w3 E 0 w1 E 3=2
p
p
w4 E
;
2 w2 E w3 E
w2 E 2 w3 E 2 w2 E w3 E 3=2
h

1

i
w1 E 0 2E Eg w1 E E E Eg
E E Eg 2E 2Eg d Dk ;

1

2

2
2
w2 E 0 2m? Eg D?
h Eg Eg D? d 2E 2Eg Dk
3
3

1

2
2
and w3 E 0 2mk Eg Dk
h2 Eg Eg Dk 2E 2Eg Dk
3
3
Combining (1.45) with the Fermi-Dirac occupation probability factor and using
the generalized Sommerfelds lemma, the electron concentration can be written as
1
n0 gv 3p2 M EF N EF

where, MEF
1:46a

3
p , EF is the Fermi energy of the bulk specimen in
w1 EF 2
w2 EF
w3 EF
the absence of band tailsfermi energy as measured from the edge of the conduction
s
P
LrMEF
band in the vertically upward direction and NEF
r1
22
In this case the EP is given by

Z1
J M4
N4 EdE0
1:47
E0
where
a0 egv
and N4 E
6p2 h
w E0
w23 E0
:
w4 E0 fE 1 0 1=2
0
0
w3 E
w3 E w1 E0 w03 E0 w1 E0
M4
1.2.2 The EP from QWs of HD III-V Semiconductors

The dispersion relation of the conduction electrons of III-V compounds are
described by the models of Kane (both three and two bands) [38, 156, 157],
Stillman et al. [40] and Palik et al. [42] respectively. For the purpose of complete
and coherent presentation and relative comparison, the EP from QWs of HD III-V
semiconductors have also been investigated in accordance with the aforementioned
different dispersion relations as follows:
(a) The Three Band Model of Kane
Under the conditions, d 0; Dk D? D (isotropic spin orbit splitting constant)
and mk m? mc (isotropic effective electron mass at the edge of the conduction
band), (1.2) gets simplied as
2 k 2
h
I11 E;
2mc

E E Eg0 E Eg0 D Eg0 23 D

I11 E
Eg0 Eg0 D E Eg0 23 D
1:48
which is known as the three band model of Kane [38, 39] and is often used to
investigate the physical properties of III-V materials. Under the said conditions, the
HD electron dispersion law in this case can be written from (1.26) as

h2 k2
T31 E; gg iT32 E; gg
2mc
1:49
23
where,
T31
!"

2
ab
ac bc ab

h0 E; gg
c0 E; gg
E; gg
2
c
c
1 Erf E=gg
!#

"

1
a
b 1
E
1 Erf
1
1
c
c
c 2
gg
"
##

1

2 X
1
a
b
2
expp2 =4
p exp u2
sinhpu2 ;
1
1
c
c
c cgg p
p
p1

1

1
2
1 cE
b Eg D ; c E D
; u2
and T32 E; gg
3
cgg
!

p

2
1
a
b
p

1

exp u22 :
1
c
c cgg
1 Erf E=gg c

Thus, the complex energy spectrum occurs due to the term T32 E; gg and this
imaginary band is quite different from the forbidden energy band.
The EEM at the Fermi level is given by

0
m EFh ; gg mc T31 E; gg
EEFh
1:50
Thus, the EEM in HD III-V, ternary and quaternary materials exists in the band
gap, which is the new attribute of the theory of band tailing.
In the absence of band tails, gg ! 0 and the EEM assumes the form

m EF mc fI11 E g0 EEF
1:51
The DOS function in this case can be written as

NHD E; gg
where,

gv 2mc 3=2
2
R21 E; gg cos #21 E; gg
2
3p
h
1:52
24
2h

6
R21 E; gg 4

0 i2 h
0 i2 31=2
a11 E; gg
b11 E; gg

7
5 ;
4a11 E; gg
4b11 E; gg

1

q

2
2
a11 E; gg T33 E; gg
;
T33 E; gg T34 E; gg
2
h
i

3

2
;
T33 E; gg T31 E; gg 3T31 E; gg T32 E; gg

h

2
3 i
;
T34 E; gg 3T32 E; gg T31 E; gg T32 E; gg
q

1

2
2

T33 E; gg T34 E; gg
T33 E; gg and
b11 E; gg
2
s
"
#
0

b11 E; gg
a11 E; gg
1

:
#21 E; gg tan

0
b11 E; gg
a11 E; gg

Thus, the oscillatory DOS function becomes negative for #21 E; gg
p and a
new forbidden zone will appear in addition to the normal band gap.
The electron concentration can be expressed as
#

"
s
X

gv 2mc 3=2

n0 2
LrI111e E; gg
I111e EFh ; gg
3p
h2
r1
1:53
where,

I111e EFh ; gg c2 EFh ; gg 3=2
The EP in this case is given by
Z1
J M5 Real part of
N5 E; gg dE0
1:54
E0
where
M5
a0 egv mc
and N5 E; gg
12p2 h3
q
T31 E0 ; gg iT32 E0 ; gg
0 E0 ; g iT 0 E0 ; g
T31
g
g
32
R21 E0 ; gg cos#21 E0 ; gg fE

25

h2 nz p=dz 2 h2 ks 2
2mc
2mc
1:55
The expression of the N2DT E in this case assumes the form

N2DT E
nz max
m c gv X
ph2 nz 1 5D
1:56
where,

T5D E; gg ; nz T31 E; gg iT32 E; gg h2 nz p=dz 2 2mc 1
and the sub band energies Enz D5 in this case given by
fh2 nz =dz 2 g2mc 1 T31 Enz D5 ; gg
1:57
Thus we observe that both the total DOS in QWs of HD III-V compounds and
the sub band energies are complex due to the presence of the pole in energy axis of
the corresponding materials in the absence of band tails.
0
m EF1HD ; gg ; nz mc T31
EF1HD ; gg ; nz
1:58
Therefore under the same conditions as used in obtaining (1.48) from (1.2), the
2D carrier statistics in this case can be written by using the same conditions from
(1.37) as
n2D
nz max
mc gv X
Real part of [T5D EF1HD ; gg ; nz T6D EF1HD ; gg ; nz
2
p
h nz 1
1:59
where,
T6D EF1HD ; gg ; nz
s
X
LrT5D EF1HD ; gg ; nz ;
r1
The EP in this is given by

J2D M6 Real part of
nX
zmax
nzmin
Z1
N6 E; gg ; nz dE
Enz D5
1:60a
26
where
a0 egv mc 2 1=2
and N6 E; gg ; nz
2p
h2 dz mc
q
T31 Enz D5 ; gg iT32 Enz D5 ; gg

0
T05D E; gg ; nz fE
0 E
T31 Enz D5 ; gg iT32
;
g
nz D5 g
M6
In the absence of band tails, the 2D dispersion relation, EEM in the x-y plane at
the Fermi level, the total 2D DOS, the sub-band energy, the electron concentration
and the EP for QWs of III-V materials assume the following forms
h2 ks2
h2
nz p=dz 2 I11 E
2mc 2mc
1:60b
m EFs mc fI11 EFs g0
1:61
It is worth noting that the EEM in this case is a function of Fermi energy alone
and is independent of size quantum number.

nzmax n

o
m c gv X
0
N2DT E

H
E

E
11
n
z
2
ph2 nz 1
1:62
where, the sub-band energies Enz2 can be expressed as

I11 Enz2
n2D
h2
nz p=dz 2
2mc
nzmax
m c gv X
ph2 nz 1
J2D M7
nX
zmax
nzmin
1:63
1:64
Z1
N7 E; nz dE
1:65
Enz2
where
"
#
s
X
h2 nz p 2
T53 EFs ; nz I11 EFs
Lr T53 EFs ; nz ;
; T54 EFs ; nz
2mc dz
r1
M7
p
I11 Enz2
a0 egv mc 1=2
0
and
N
E;
n
I
EfE
7
z
11
0 E
I11
2ph2 dz 2
nz2
27
In the absence of band tails, the DOS function, the electron concentration, and
the EP in bulk III-V, ternary and quaternary materials in accordance with the
unperturbed three band model of Kane assume the following forms

D0 E 4pgv
2mc
h2
3=2
p 0

I11 E I11 E

gv 2mc 3=2
n0 2
M1 EF N1 EF
3p
h2
1:66
1:67
and
"
#

1 23 aD
1
2akB TF2 g0 1 2aE0 aD F1 g0
1 aD
3

2
1
a0 g0
E0 aE0 3 aDE0
/ g 0
F1 g0 a0 ln
1:68
kB T
a0
4pemc KB T 2 a0 gv
J
h3
where,
"
#
1
1
1
1

I11 E
; M1 EF I11 EF 3=2 ;
E E Eg E Eg D E Eg 23 D

s
X
E0 Eg0 23 D
2 D2
2
; a0
aD
;
Lr M1 EF ; a0
1
N 1 EF
kB T
9 kB T 2
3
r1
0
I11
E
/ g 0
S0
X

12r1 2r 1!
hm /
2 1 212r f2r
; g0
2r
kB T
a0 g0
r1
and Fj g is the one parameter Fermi-Dirac integral of order j which can be written
[180182] as

Fj g
1
Cj 1
Z1
0
x j dx
;
1 expx g
j [ 1
1:69
or for all j, analytically continued as a complex contour integral around the negative
x-axis

Fj g
Cj
p
2p 1
Z0
1
x j dx
1 expx g
1:70
28
where is the dimensionless quantity and x is independent variable,

Under the inequalities D Eg0 or D Eg0 ; (1.48) can be expressed as
E 1 aE
h2 k2
2mc
1:71
where a Eg0 1 and is known as band non-parabolicity.

It may be noted that (1.71) is the well-known two band model of Kane and is
used in the literature to study the physical properties of those III-V and optoelectronic materials whose energy band structures obey the aforementioned
inequalities.
The dispersion relation in HD III-V, ternary and quaternary materials whose
energy spectrum in the absence of band tails obeys the two band model of Kane as
dened by (1.71), can be written as

h2 k 2
c2 E; gg
2mc
1:72
where,
c2 E; gg
"
#

2

c0 E; gg ah0 E; gg :

1 Erf E=gg
The EEM in this case can be written as

0
m EFh ; gg mc c2 E; gg
EEFh
1:73a
Thus, one again observes that the EEM in this case exists in the band gap.
In the absence of band tails, gg ! 0 and the EEM assumes the well-known form
m EF mc f1 2aEgjEEF
1:73b

NHD E; gg

q

0
gv 2mc 3=2
2
c2 E; gg c2 E; gg
2
2p
h
1:73c
Since, the poles of the original two band Kane model are at innity and and no
nite poles with respect to energy, therefore the HD counterpart will be totally real
and the complex band vanishes.
29
The electron concentration is given by

#

"
s
X

gv 2mc 3=2
I111 EFh ; gg
n0 2
LrI111 EFh ; gg
3p
h2
r1
1:74
where,

I111 EFh ; gg c2 EFh ; gg 3=2
Z1
J M7
N7 E; gg dE0
1:75
E0
where
M7
a0 egv mc
and N7 E; gg c2 E0 ; gg fE
2p2 h3


c2 E; gg
2mc
2mc
1:76
The expression of the N2DT E in this case can be written as

N2DT E
nz max
m c gv X
ph2 nz 1 7D
1:77
where,

T7D E; gg ; nz c2 E; gg h2 nz p=dz 2 2mc 1 ;
The sub-band energies Enz D7 in this case given by
n
o

h2 nz p=dz 2 2mc 1 c2 Enz D7 ; gg
1:78
Thus, we observe that both the total DOS and sub-band energies of QWs of HD
III-V compounds in accordance with two band model of Kane are not at all
complex since the dispersion relation in accordance with the said model has no pole
in the nite complex plane.
30

m EF1HD ; gg ; nz mc c02 EF1HD ; gg ; nz
1:79
(1.77) as
n2D
nz max
m c gv X
T7D EF1HD ; gg ; nz T8D EF1HD ; gg ; nz
ph2 nz 1
1:80
where,
T8D EF1HD ; gg ; nz
s
X
r1

J2D M8
nX
zmax
nzmin
Z1
N8 E; gg0 ; nz dE
1:81
Enz D7
where
M8
c2 Enz D7 ; gg
a0 egv mc 2 1=2
0
and N8 E; gg ; nz T7D
E; gg ; nz fE 0
c2 Enz D7 ; gg
2pdz
h2 m c
Under the inequalities D Eg0 or, D Eg0 (1.60a), (1.160b) assumes the form
E1 aE

h2 ks2
h2 nz p 2
2mc 2mc dz
1:81a
The EEM can be written from (1.81a) as

m EFs mc 1 2aEFs
1:81b
The total 2D DOS function assumes the form

N2DT E
nzmax

mc gv X
2aE
H
E

E
n
z3
ph2 nz 1
1:82
31
where, the sub-band energy Enz3 can be expressed as

h2
nz p=dz 2 Enz3 1 aEnz3
2mc
1:83
The 2D electron statistics can be written as
n2D
nzmax Z1
m c gv X
1 2aEdE

2
EEFs
p
h nz 1
1
exp
kB T
E
n3
nX
zmax h
i
mc kB Tgv
2aE
F
g
2ak
TF
g
n
0
B
1
n
n
z
1
1
3
ph2 nz 1
1:84
where,
gn1 EFs Enz3 =kB T
The EP in this case the can be written as
J2D
nzmax
a0 egv mc 2 1=2 X

2p
h2 dz mc
nz
2akB TF0 gn1
min
p
Ezmax 1 aEnz 3
1 2aEnz 3 F0 gn1
1 2aEnz 3
1:85
The forms of the DOS, the electron statistics and the EP for bulk specimens of
III-V materials in the absence of band tails whose energy band structures are
dened by the two-band model of Kane can, respectively, be written as

D0 E 4pgv
2mc
h2
3=2
p 0

I11e E I11e E
1:86

gv 2mc 3=2
M2 EF N2 EF
3p2 h2
1:89
4pa0 emc kB T2
F1 g0 2akB TF2 g0
h3
1:90
n0
and
J
32
where,
0
I11e E E1 aE; I11e
E 1 2aE; M2 EF I11e EF 3=2
and
N2 EF
s
X
LrM2 EF
r1
Under the constraints D Eg or D Eg together with the inequality aEF 1,

the (1.89) assumes the forms as

15akB T
n0 gv Nc F1=2 g
F3=2 g
4
1:91
where,

2pmc kB T
NC 2
h2
3=2
and
g
EF
kB T
The dispersion relation in HDS whose energy spectrum in the absence of band
tails obeys the parabolic energy bands (1.69) is given by

h2 k 2
c3 E; gg
2mc
1:92
where,
"

c3 E; gg
#

2

c0 E; gg :
1 Erf E=gg
1:93
Since the dispersion relation in accordance with the said model is an all zero
function with no pole in the nite complex plane, therefore the HD counterpart will
be totally real, which is also apparent form the expression (1.92).
33

0
m EFh ; gg mc c3 EFh ; gg
1:94
In the absence of band tails, gg ! 0 and the EEM assumes the form
m E F m c
1:95
It is well-known that the EEM in unperturbed parabolic energy bands is a

constant quantity in general excluding cross-elds conguration. However, the
same mass in the corresponding HD bulk counterpart becomes a complicated
function of Fermi energy and the impurity potential together with the fact that the
EEM also exists in the band gap solely due to the presence of nite gg :

q

0
gv 2mc 3=2
c3 E; gg c3 E; gg
NHD E; gg 2
2
2p
h
1:96

#

"
s
X

gv 2mc 3=2
I113 EFh ; gg
n0 2
LrI113 EFh ; gg
3p
h2
r1
1:97
where,

I113 E; gg c3 EFh ; gg 3=2
Z1
J M7
N8 E; gg dE0
1:98
E0
where
N8 E; gg c3 E0 ; gg fE

c3 E; gg
2mc
2mc
1:99
34
the expression of the N2DT E in this case can be written as

N2DT E
nz max
m c gv X
ph2 nz 1 9D
1:100
where,

T9D E; gg ; nz c3 E; gg h2 nz p=dz 2 2mc 1 :
The sub band energies Enz D9 in this case given by

fhnz p=dz 2 g2mc 1 c3 Enz D9 ; gg
1:101

m EF1HD ; gg ; nz mc c03 EF1HD ; gg
1:102
(1.77) as
n2D
nzmax
m c gv X
ph2 nz 1
1:103
where,
T10D EF1HD ; gg ; nz
s
X
r1

J2D M8
nX
zmax
nzmin
Z1
N9 E; gg0 ; nz dE
1:104a
Enz D9
where
0
N9 E; gg ; nz T9D
E; gg ; nz fE
c3 Enz D9 ; gg
c03 Enz D9 ; gg
Under the condition a ! 0, the expressions of total 2D DOS, for semiconductors without forming band tails whose bulk electrons are dened by the isotropic
parabolic energy bands can, be written as
35
N2DT E
nzmax
mc gv X
H
E

E
n zp
ph2 nz 1
1:104b
The sub-band energy Enzp , the n2D and the EP can, respectively, be expressed
as
Enzp

h2 nz p 2
2mc dz
1:105
nzmax
mc kB Tgv X
F0 gn2
ph2 nz 1
1:106a
zmax

ao ekB Tgv X
nz F0 gn2 ;
2
2hdz nz
1:106b
n2D
J2D
min
where,
"
#
p
2mc
dz
1
h2 nz p 2
1=2
EFs
nzmin
W hm and gn2
kB T
p
2mc dz
h
Converting the summation over nz to the integration over nz , (1.106b) gets
transformed to the well-known relation as [38, 39]
J
4pa0 emc gv kB T 2
F 1 g0
h3
1:106c
This indirect test not only exhibits the mathematical compatibility of our formulation but also shows the fact that our simple analysis is a more generalized one,
since one can obtain the corresponding results for relatively wide gap 2D materials
having parabolic energy bands under certain limiting conditions from our present
derivation.
(b) The Model of Stillman et al.
In accordance with the model of Stillman et al. [40], the electron dispersion law of
III-V materials assumes the form
E t11 k2 t12 k4
1:107
36
where,
2
h
;
2mc

2

1
m 2 h2
2D2
t12 1 c
3Eg0 4D
Eg0 D 2D 3Eg0
m0
2mc
Eg0
t11
and m0 is the free electron mass

In the presence of band tails, (1.107) gets transformed as
h2 k 2
I12 E; gg
2mc
1:108
where,
1
I12 E; gg a11 1 1 a12 c3 Egg 2 ; a11

h2t11
4t12
and a12 2
t11
4mct12
The EEM can be written as

0
m EFh ; gg mc I12 EFh ; gg
1:109

q

0
gv 2mc 3=2
I12 E; gg I12 E; gg
NHD E; gg 2
2
2p
h
1:110

#

"
s
X

gv 2mc 3=2

I121 EFh ; gg
LrI121 E; gg
n0 2
3p
h2
r1
1:111
where,

I121 EFh ; gg I12 EFh ; gg 3=2
Z1
J M7
E0
N9 E; gg dE0
1:112
37
where
N9 E; gg I12 E0 ; gg fE

I12 E; gg
2mc
2mc
1:113

N2DT E
nz mzx
mc gv X
ph2 nz 1 11D
1:114
where,

T11D E; gg ; nz I12 E; gg h2 nz p=dz 2 2mc 1 ;
n
o

h2 nz p=dz 2 2mc 1 I12 Enz D11 ; gg
1:115
The EEM in this case assumes the form

0
EF1HD ; gg ; nz
m EF1HD ; gg ; nz mc I12
1:116
The 2-D electron statistics in this case can be written as

n2D
nz max
mc gv X
p
h2 nz 1
1:117a
where,
s
X
r1

J2D M8
nX
z max
nz min
Z1
N10 E; gg ; nz dE
Enz D11
1:117b
38
where
0
N9 E; gg ; nz T11D
E; gg ; nz fE
I12 Enz D11 ; gg

0 E
I12
nz D11 ; gg
For unperturbed material, the 2-D EEM can be expressed as

m EFs mc fI12 EFs g0
1:118
where
1
I12 E a11 1 a12 E2

It appears that the EEM in this case is a function of Fermi energy alone and is
independent of size quantum number.
The total 2D DOS function in the absence of band tails in this case can be
written as
N2DT E

nzmax n

o
m c gv X
0

H
E

E
12
n
z3
ph2 nz 1
1:119
where, the sub band energies Enz3 can be expressed as

I12 Enz3
h2
nz p=dz 2
2mc
1:120
The 2D electron concentration assumes the form

n2D
nzmax
m c gv X
ph2 nz 1
1:121
where
"
#
s
X
h2 nz p 2
LrT55 EFs ; nz
and T56 EFs ; nz
2mc dz
r1
J2D
nzmax p Z1
I12 Enz 3
a0 egv mc 2 1=2 X
0

0
I12
EfEdE
2
E
I
2p
h dz m c
n
3
z
12
nz
min
E nz 3
1:122a
39
The expression of electron concentration for bulk specimens of III-V semiconductors (in the absence of band tails) can be written in accordance with the model of
Stillman et al. as

gv 2mc 3=2
n0 2
MA10 EF NA10 EF
1:122b
3p
h2
where,
MA10 EF I12 EF 3=2 and NA10 EF
s
X
LrMA10 EF
r1
The EP in this case can be expressed as

4pa0 egv mc
J
h3
Z1
I12 E 0 fEdE0
1:122c
E0
(c) Model of Palik et al.

The energy spectrum of the conduction electrons in III-V semiconductors up to the
fourth order in effective mass theory, taking into account the interactions of heavy
hole, light hole and the split-off holes can be expressed in accordance with the
model of Palik et al. [42] as
E
where
"
11
B
4
h
4Eg0 mc 2
#"
h2 k2 4
B11 k
2mc
1:123
#

1
x2
1 211
D
mc
2
and y11
x11 1 y11 ; x11 1
Eg0
1 2
mo
The (1.123) gets simplied as

h2 k2
I13 E
2mc
where
and
b12
1=2
11
I13 E b12 a12 a12 2 4EB
;
h
a12
11
2B
1:124

a12
h2
2mc
40
Under the condition of heavy doping forming Gaussian band tails, (1.124)
assumes the form
h2 k 2
I13 E; gg
2mc
1:125
where,
11 c3 E; gg 1=2
I13 E; gg b12 a12 a12 2 4B

0
1:126
The DOS function in this case can be expressed as

q

0
gv 2mc 3=2
I13 E; gg I13 E; gg
NHD E; gg 2
2
2p
h
1:127
Since, the original band model in this case is a no pole function, in the nite
complex plane therefore, the HD counterpart will be totally real and the complex
band vanishes.
#

"
s
X

gv 2mc 3=2
n0 2
I123 EFh ; gg
LrI123 EFh ; gg
3p
h2
r1
1:128
where,

I123 EFh ; gg I13 EFh ; gg 3=2
Z1
J M7
N11 E; gg dE0
E0
where
N11 E; gg I13 E0 ; gg fE
1:129
41


I13 E; gg
2mc
2mc
1:130

zmax
m c gv X
ph2 nz 13D
N2DT E
1:131
where,

fhnz p=dz 2 g2mc 1 I13 Enz D13 ; gg
1:132
The EEM in this case can be expressed as

0
EF1HD ; gg ; nz
1:133

n2D
nz max
mc gv X
p
h2 nz 1
1:134
where,
s
X
r1

J2D M8
nX
zmax
nzmin
Z1
N13 E; gg0 ; nz dE
Enz D13
1:135a
42
where
0
N13 E; gg ; nz T13D
E; gg ; nz fE
I13 EnzD13 ; gg
0 E
I13
nzD13 ; gg
The 2D electron dispersion relation in the absence of band tails this case assumes
the form
h2 ks2
h2
nz p=dz 2 I13 E
2mc 2mc
1:135b
The EEM in this case can be written from (1.135b) as

m EFS mc I13 EFS 0
1:135c
The total 2D DOS function can be written as

nzmax n

o
m c gv X
0

H
E

E
N2DT E
13
n
z4
ph2 nz 1
1:136
where, the sub band energies Enz4 can be expressed as

I13 Enz4
h2
nz p=dz 2
2mc
1:137
The 2D electron concentration assumes the form

n2D
nzmax
m c gv X
ph2 nz 1
1:138
where
"
#
h2 nz p 2
and
2mc dz
T58 EFs ; nz
s
X
Lr T57 EFs ; nz
r1

J2D
nzmax p Z1
I13 Enz4
a0 egv mc 2 1=2 X
0

0
I13
EfEdE
E
I
2ph2 dz mc
n
z4
13
nz
min
Enz4
1:139a
43
The expression of electron concentration for bulk specimens of III-V semiconductors (in the absence of band tails) can be written in accordance with the model of
Stillman et al. as
n0
gv 2mc 3=2
A10 EF
MA10 EF N
3p2 h2
1:139b
where,
A10 EF I13 EF 3=2 and N
A10 EF
M
s
X
A10 EF
LrM
r1

4pa0 egv mc
J
h3
Z1
I13 E0 fEdE0 :
1:139c
E0
1.2.3 The EP in QWs of HD II-VI Semiconductors

The carrier energy spectra in bulk specimens of II-VI compounds in accordance
with Hopeld model [59] can be written as
E a0o ks2 b0o kz2 ko ks
1:140
h2 =2m? ; b00 h2 =2mk , and k0 represents the splitting of the two-spin
where a00
states by the spin orbit coupling and the crystalline eld.
Therefore the dispersion relation of the carriers in HD II-VI materials in the
presence of Gaussian band tails can be expressed as

c3 E; gg a00 ks2 b00 kz2 k0 ks
1:141
Thus, the energy spectrum in this case is real since the corresponding E-k
relation in the absence of band tails as given by (1.141) is a no pole function in the
nite complex plane.
The transverse and the longitudinal EEMs masses are, respectively, given by
1 3

k
0

7
6
C
B
0
m? EFh ; gg m? c3 E; gg 41 @q

5
A
2

k0 4a0 c E; g

g
0 3
2
1:142
EEFh
44
and

0
mk EFh ; gg mk c3 E; gg
1:143
EEFh
Thus the transverse EEM in HD II-VI semiconductors is a function of electron

energy and is double valued due to the presence of k0 and due to heavy doping the
same mass exists in the band gap.
In the absence of band tails, gg ! 0, we get
13

k0
C7
B

6
m? EF m? 41 @q
A5
2

k0 4a0 E

0
2
1:144
EEF
and
mk EF mk
1:145
The volume in k-space as enclosed (1.141) can be expressed as

V E; gg
2 q

c3 E; gg
3 k0

3=2
4p
0 p0 4 c3 E; gg
8
3a0 b0
a00
2
3 k0
p
4 a00
33
q

2 !
k0
c3 E; gg
77
6

1 6
77
r
sin
c3 E; gg
0
4
2
4a0

k0 55
c3 E; gg 4a0
0
1:146
Therefore, the electron concentration can be written as
"
#
s

X

gv
p I124 EFh ; gg
n0
LrI124 EFh ; gg
3p2 a00 b00
r1
where,
I124 EFh ; gg
2 q

3
c3 EFh ; gg

3=2 3 k0
5
4 c3 EFh ; gg
a00
8
2
1:147
45
Z1
a0 egv
2
p0 1=2
0
2
m
12p a0 b0 11
E0
q
c3 E 0 ; gg

I124 E0 ; gg 0 fEdE0
c03 E 0 ; gg
1:148
The dispersion relation of the conduction electrons of QWs of HD II-VI materials for dimensional quantization along z-direction can be written following
(1.141) as
c3 E; gg
a00 ks2
b00
2
pnz
k0 ks
dz
1:149
The EEM can be expressed following (1.149) as

m EF1HD ; nz ; gg
m? 1
0

k0 c EF1HD ; g
g
3

1:150

2

2
k0 4a00 b00 ndzzp 4a00 c3 EF1HD ; gg 1=2
Thus we observe that the doubled valued effective mass in 2-D QWs of HD II-VI
materials is a function of Fermi energy, size quantum number and the screening
potential respectively together with the fact that the same mass exists in the band
gap due to the sole presence of the splitting of the two-spin states by the spin orbit
coupling and the crystalline eld.
The sub-band energy in this case is given by
c3 EnZ D14 ; gg
b00
2
pnz
dz
1:151
The surface electron concentration at low temperatures assumes the form

n2D
Zmax

2 2
gv m? nX

E
c
E
;
g
k0 m? h
F1HD
n
D14
3
g
Z
p
h2 nZ 1
1:152
The EP in this cases given by
J2D
nX
zmax
a0 egv 2 1=2
m
pdz h2 ? m11
nz
min
q
c3 Enz D14 ; gg
c03 Ennz D14 ; gs
Z1

c3 E; gg f EdE 1:153a
Enz D14
The dispersion relation of the conduction electrons of QWs of II-VI materials for
dimensional quantization along z-direction in the absence of band tails can be
written following (1.140) as
46
E a00 ks2 b00
2
nz p
k0 ks
dz
1:153b
Using (1.153b), the EEM in this case can be written as

k0

m EFs ; nz m? 1

2
2
1=2
nz p
0
0
0

k0 4a0 b0 dz 4a0 EFs
1:154
The sub-band energy Enz5 assumes the form

Enz 5 b00 nz p=dz 2
1:155
The area of constant energy 2D quantized surface in this case is given by where
"

#

h 2
2

i1=2
0
0
A E; nz 2 k0 2a0 E Enz5 k0 k0 4a0 E Enz5
2 a00
p
The surface electron concentration can be expressed in this case as

n2D
1
nzmax Z
2gv X
22p
nz 1
A EFs ; nz A EFs ; nz
Enz5
o
ff0 EgdE
oE
1:156
where f0 E is the Fermi-Dirac occupation probability factor.

From (1.156) we get
zmax
gv m? kB T X
F0 gnz8
ph2 nz 1
n2D
1:157
where

2
gnz8 EFs Enz5 k m? h2 kB T1
Therefore the EP is given by
J2D
nzmax
p
a0 egv 2 1=2 X
kB T
m
Enz D5 F1 gnz 8 :
2 ? m
pdz h
11
nz
min
1:158
47
1.2.4 The EP from QWs of HD IV-VI Semiconductors

(a) The dispersion relation of the conduction electrons in IV-VI semiconductors can
be expressed in accordance with Dimmock [183] as

Eg
h2 k 2 h2 k 2

Eg
h2 k 2 h2 k2
e 0 s z e 0 s z P2? ks2 P2k kz2
2
2mt
2ml
2
2mt
2ml
1:159

where, e is the energy as measured from the center of the band gap Eg0 ; m
t and ml
represent the contributions to the transverse and longitudinal effective masses of the

~ p perturbations with the other bands
external L
6 and L6 bands arising from the k ~
taken to the second order.
2

h E
E
Substituting, P2? h2 Eg =2mt ; P2k 2mg and e E 2g (where, mt and
l
ml are the transverse and the longitudinal effective masses at k = 0), (1.159) gets
transformed as

h2 k2
h2 k2 h2 k2

h2 k 2
h2 ks2 h2 kz2
E s z 1 aE a s a z
2mt
2ml
2mt
2ml
2mt
2ml
1:160

ah2 kz2
ah4 ks4
1
1
1
1
2 2

h ks

aE

2mt 2m
2m
2mt
4m
4ml mt
t mt
t
t
2 2

2 2
4 4
h kz h kz

ah kz
aE 2 2 1
1
h kz

E1 aE 0
2
m
2ml
2ml
ml
4ml mt
l
1:161
Using (1.161), the dispersion relation of the conduction electrons in HD IV-VI
materials can be expressed as

a
h4 ks4
h2 ks2 k71 E; gg kz2 k72 E; gg
Z0 E; gg
4mt ml

k73 E; gg kz2 k74 E; gg kz4 k75 E; gg 0
1:162
48
where,
"
!#

1

E
a
1 Erf
Z0 E; gg
; k70 E; gg
Z0 E; gg
2
gg
4mt mt

2
2

ah
ah
k71 E; gg
Z
E;
g
Z
E;
g
g
g ;
0
0
4m
4m
t ml
l mt

1
1
1
1

E;
g

E;
g
k72 E; gg
Z
c
a
0
g
0
g ;
2mt 2m
2m
2m
t
t
t
2

ah2 1

h
h2
1
k73 E; gg
E;
g

E;
g
Z
c
0
g
0
g ;
2ml 2m
2 m
2m
l
l
l

ah4 Z0 E; gg

and k75 E; gg c0 E; gg ah0 E; gg
k74 E; gg

4ml ml
Thus, the energy spectrum in this case is real since the corresponding dispersion
relation in the absence of band tails as given by (1.162) is a pole-less function with
respect to energy axis in the nite complex plane.
The respective transverse and the longitudinal EEMs in this case can be written
as
2
3

0

2 6
6
0
k78 E; gg 7
m? EFh ; gg 2Z0 E; gg
4Z0 E; gg 4 k72 E; gg q

5
2 k78 E; gg
2

0

q

k72 E; gg k78 E; gg
Z0 E; gg
#

EEFh
1:163
where,

k78 E; gg 4k70 E; gg k75 E; gg
and
3
2

0

0
2

2
k
k
E;
g
k
E;
g
E;
g
h

84
84
85
0
7
6
g
g
g
q
mk EFh ; gg 4 k84 E; gg
5

2

4
k84 E; gg 4k85 E; gg

EEFh
1:164
49
in which,

k73 E; gg

k75 E; gg

and k85 E; gg

k84 E; gg
k74 E; gg
k74 E; gg
Thus, we can see that the both the EEMs in this case exist in the band gap.
In the absence of band tails, gg ! 0, we get
m? EF
"
#
h2
a511 fT311 Eg0
0
fa11 Eg p
2
2 T311 E
1:165
EEF
where

2m
1
aE
1 aE
2m
t mt
t mt
a
E
;
a

x11
;
a
211
211
511
2mt 2m
2m
a
h2
ah2
t
t
"
#1=2
2
a2
1
1
a2
x311 E
x11
; T311 E
;

m m m
16 m
m
m
m
4m
x11 2
t
t
t
t
l
l
l
l
"

#
aE1 aE
1
aE
1 aE 2

x311 E

2mt
2m
m
2m
t mt
t
t
a11 E
and
mk EF
8
93
2
h
i
>
>
>
a12aE>
>
>

1
1aE
aE
a
a
<
=7
6

2ml
2ml
2ml
mt ml 6 a
a
1
2ml
2ml
ml ml
7
7
6

1=2
h
i
>
5
4 2ml
2ml
2>
a
2
>
>
aE1aE

1
1aE
aE
>
>
:
;

2m 2m 2m m m
l
EEF
1:166
The volume in k-space as enclosed by (1.162) can be written through the integral
as

V E; gg 2p
k86 E;gg

q

k79 E; gg kz2 k80 E; gg k81 E; gg kz4 k82 E; gg kz2 k83 E; gg dkz
1:167
50
where,
2q

2

31=2

k84 E; gg 4k85 E; gg k84 E; gg

k E; g
5 ; k79 E; gg 71 g
k86 E; gg 4
2
2
h2 Z0 E; gg

2

2
k76 E; gg
k81 E; gg

2 ; k76 E; gg k71 E; gg ; k76 E; gg k71 E; gg
4
4h Z0 E; gg

k77 E; gg 2k71 E; gg k72 E; gg 4k70 E; gg k73 E; gg 4k0 E; gg k74 E; gg ;

k78 E; gg
k83 E; gg

2 and k78 E; gg 4k70 E; gg k75 E; gg
4
9h Z0 E; gg
Thus,

V E; gg k87 E; gg
k86 E;gg
q

kz4 k88 E; gg kz2 k89 E; gg k90 E; gg dkz
1:168
where,
k87 E; gg

q

k82 E; gg

k83 E; gg

; k89 E; gg

2p k81 E; gg ; k88 E; gg
k81 E; gg
k81 E; gg
and
k90 E; gg
"
#

3

k79 E; gg k86 E; gg
k80 E; gg k89 E; gg :
2p
3
The (1.168) can be written as

V E; gg k87 E; gg k95 E; gg k90 E; gg
in which,
1:169
51
"

k91 E; gg
k95 E; gg
Ei k93 E; gg ; k94 E; gg
3
h
2
2
2

i
k91 E; gg k92 E; gg 2 k92 E; gg Fi k93 E; gg ; k94 E; gg

!h

2
2
2 i
k86 E; gg
k86 E; gg k91 E; gg 2 k92 E; gg

3
h
#

2
2 i1=2 h
2
2 i1=2
;

k91 E; gg k86 E; gg
k92 E; gg k86 E; gg

2 1 q

2

k91 E; gg

k88 E; gg 4k89 E; gg k88 E; gg ; Ei k93 E; gg ; k94 E; gg
2
is the incomplete elliptic integral of the 2nd kind and is given by [129, 130],

Ei k93 E; gg ; k94 E; gg
k93 E;gg
n
o1=2

2
1 k94 E; gg sin2 n
dn;
n is the variable of integration in this case,

"
#

1

q

2

k86 E; gg

; k92 E; gg 2 k88 E; gg
k88 E; gg 4k89 E; gg ;
k93 E; gg tan1
2
k92 E; gg
q

2
2
k91 E; gg k92 E; gg

k94 E; gg
; Fi k93 E; gg ; k94 E; gg
k91 E; gg
is the incomplete elliptic integral of the 1st kind and is given by [129, 130],

Fi k93 E; gg ; k94 E; gg
k93 E;gg
n

2 2 o1=2
1 k94 E; gg sin n
dn:
The DOS function in this case is given by

0

0

0 i
gv h
NHD E; gg 3 k87 E; gg k95 E; gg k95 E; gg k87 E; gg k90 E; gg
4p
1:170
52
Therefore the electron concentration can be expressed as

"
#
s

X

gv
n0 3 I125 EFh ; gg
LrI125 EFh ; gg
4p
r1
1:171
where,

I125 EFh ; gg k87 EFh ; gg k95 EFh ; gg k90 EFh ; gg
The EP in the case is given by
a0 egv
J 3
8p h
Z1
E0
p
f E k100 E 0 ; gs 0
k101 E0 ; gs dE0
k0100 E 0 ; gg
1:172
where,
k100 E; gg k73 E; gg
q
k273 E; gg 4k74 E; gg k75 E; gg 2k74 E; gg 1
and k101 E; gg k87 E; gg k95 E; gg k90 E; gg
The 2D dispersion relation of the conduction electrons in QWs of IV-VI

materials in the absence of band tails for the dimensional quantization along z
direction can be expressed as
!
!

2
2
2 kx2 h ky2
h
h2 nz p 2
h2 kx2 h ky2
aE
1 aE
2x4
2x5
2x6 dz
2x1
2x2
!
!
!
2

2 2
2 2
2 2
2 2
2
2
2
2
2
h kx h ky

h kx h ky
h kx h ky h
nz p
h2 nz p 2
1 aE
a
a
2x1
2x2
2x4
2x5
2x1
2x2 2x6 dz
2x3 dz
!

2
2
h2 nz p 2 h2 kx2 h ky2

h2 nz p 2 h2 nz p 2 h2 kx2 h ky2
h2 nz p 2
a
a
2x3 dz
2x4
2x5
2x3 dz 2x6 dz
2m1 2m2 2m3 dz
E1 aE aE
1:173
where

m
3m
m
3m m

t 2ml
t ml
t 2ml
; x6
; x3 t l ;
; x1 mt ; x2
3
3
2ml mt
2ml mt

m
2m
3m
m
l
and m3 l l :
m1 mt ; m2 t
3
mt 2ml
x4 m
t ; x5
53
Therefore, the HD 2-D dispersion relation In this case assumes the form
!
!

h

h2 kx2 h2 ky2
h2 ky2
2 kx2
h2 nz p 2
c2 E; gg ac3 E; gg
1 ac3 E; gg
ac3 E; gg
2x4
2x5
2x6 dz
2x1
2x2
!
!
!
2
2
2 2
2 2
2 2
2 2
2
2
2
2
2
2

h
h ky
h ky
h kx h ky
h kx
h kx
h
nz p
nz p
a
a
1 ac3 E; gg
2x1
2x2
2x4
2x5
2x1
2x2 2x6 dz
2x3 dz
!

2 2

2
h2 ky2
h2 nz p 2 h2 kx2
h2 nz p 2

h
nz p
h2 kx2 h ky2
h2 nz p 2
a
a
2x3 dz
2x4
2x5
2x3 dz 2x6 dz
2m1 2m2 2m3 dz
1:174
Substituting, kx r cos h and ky r sin h (where r and are 2D polar coordinates in 2D wave vector space) in (1.174), we can write
2
2

2

1
h cos2 h
h2 sin2 h
h cos2 h
h2 sin2 h
1
h cos2 h
h2 sin2 h
r4 a
r2
4
x1
x2
x4
x5
2
m1
m2
2

2
2 2
h2 nz p 2

h cos2 h h2 sin2 h
h cos2 h

h2 sin2 h
h
nz p
a
a
x4
x5
x1
x2
2x3 dz
2x6 dz
2

"
2
2
2

cos h sin h
cos h sin h
2
2

h 1 ac3 E; gg

h ac3 E; gg
c2 E; gg
x1
x2
x4
x5
!#

4

h2 nz p 2
h2 nz p 2
h4

nz p
ac3 E; gg
1 ac3 E; gg
a
0
2x6 dz
2x3 dz
4x3 x6 dz
1:175
The area AE; nz of the 2D wave vector space can be expressed as
AE; nz J1 J2
1:176
where
J1 2
Zp=2
c1
dh
b1
1:177
ac21
dh
b31
1:178
and
J2 2
Zp=2
0
in which,
54
4 2

h

cos h sin2 h cos2 h sin2 h
a a
;
x1
x2
x4
x5
4
"

2 2 2

2 2
h

cos h sin2 h
h
nz p
cos h sin2 h
a
b1
m1
m2
dz
x4
x5
2
2x3
2 2 2

h

nz p
cos h sin2 h
a
dz
m1
m2
2x6

cos2 h sin2 h

cos2 h sin2 h
1 ac3 E; gg
ac3 E; gg
x1
x2
x4
x5
and
"
c1 c2 E; gg
2
2 2 4 4 #

h2

nz p
h
nz p
h

nz p
1 ac3 E; gg
a
ac3 E; gg
2x6
2x3
4x3 x6
dz
dz
dz
The (1.177) can be expressed as

J1 2
Zp=2
0
t31 E; nz dh
A11 E; nz cos2 h B11 E; nz sin2 h
where,
h2
t31 E; nz c1 ; A11 E; nz
t11 E; nz ;
2m1
"
"

##

ac3 E; gg
1 ah2 nz p 2 ah2 nz p 2 1 ac2 E; gg
t11 E; nz 1 m1

x1
x4
2x1 x6 dz
x4 2x3 dz
2
h
t21 E; nz and
2m2
"
"

##

ac3 E; gg
ah2 nz p 2 ah2 nz p 2 1 ac3 E; gg
:
t21 E; nz 1 m2

x2
x5
2x3 x5 dz
2x2 x6 dz
B11 E; nz
Performing the integration, we get

J1 pt31 E; nz A11 E; nz B11 E; nz 1=2
1:179
55
From (1.178) we can write

4
2
J2 at31 E; nz h I
2B311 E; nz
1:180
where,
Z1
I
0
a1 a2 z2 a3 a4 z2 dz
; a2
h
i3
2
2
a z

A11 E; nz
;
B11 E; nz
1:181
in which a1 x11 ; a2 x12 ; z tan h; h is a new variable, a3 x14 ; a4 x15 and

z

a2 AB11 E;n
E;nz .
The use of the Residue theorem leads to the evaluation of the integral in (1.181)
as
I
p
a1 a4 3a2 a4 ;
4a
1:182
Therefore, the 2D area of the 2D wave vector space can be written as

pt31 E; nz
1 1
3 at31 E; nz h4
p
AHD E; nz
1
1:183
x5 x1 x2 8B211 E; nz
A11 E; nz B11 E; nz
The EEM for the HD QWs of IV-VI materials can thus be written as
m E; nz

h2
h5HD E; nz
2
EEF1HD
1:184
where,
"
#

1 1
3 at31 E; nz h4
h5HD E; nz 1
A11 E; nz B11 E; nz 1

x5 x1 x2 8B11 E; nz 2
"
p

A11 E; nz B11 E; nz ft31 E; nz g0 t31 E; nz
(

1=2

1=2 )#
1
1
0 B11 E; nz
0 A11 E; nz
fB11 E; nz g
fA11 E; nz g
2
A11 E; nz
2
B11 E; nz

1
t31 E; nz ah4
1 1
3
p
B11 E; nz 4
8 A11 E; nz B11 E; nz x5 x1 x2
h
i
fB11 E; nz g2 ft31 E; nz g0 2B11 E; nz fB11 E; nz g0 t31 E; nz :
56
Thus, the EEM is a function of Fermi energy and the quantum number due to the
band non-parabolicity.
The total DOS function can be written as
N2DT E
g
nX
zmax
v
2p
nz 1
h5HD E; nz H E Enz7HD
1:185

where the sub-band energy Enz7 in this case can be written as

h2 n p2
h2 nz p 2
z
c2 Enz7HD ; gg ac3 Enz7HD ; gg
1 ac3 Enz7HD ; gg
2x6 dz
2x3 dz

" 2 2 #
h2 nz p 2 h2 nz p 2

h
nz p
a

0
1:186
2x3 dz 2x6 dz
2m3 dz
The use (1.185) leads to the expression of 2D electron statistics as
zmax
gv X
T55HD EF1HD ; nz T56HD EF1HD ; nz
2p n 1
n2D
1:187
where
AHD EF1HD ; nz
and
p
s
X
T56HD EF1HD ; nz
Lr T55HD EF1HD ; nz :
T55HD EF1HD ; nz
r1
J2D
nX
zmax
a0 egv
hdz nz
min
q
1
c12 Enz7HD ; gg Z

0
h5HD E; nz f EdE
c12 Enz 7HD ; gg
Enz 7HD
where,
c12 Enz 7HD ; gg c10 Enz 7HD ; gg
q
c210 Enz 7HD ; gg 4c11 Enz 7HD ; gg =2;
ah4 1 h2
h2
h2
c10 Enz 7HD ; gg

1 ac3 Enz 7HD ; gg
ac3 Enz 7HD ; gg
and
4x3 x6
2m3
2x3
2x6
ah4 1
c11 Enz 7HD ; gg
c2 Enz 7HD ; gg
4x3 x6
57
In the absence of band-tails the EEM in QWs of IV-VI materials can be written as

h2
m E; nz h5 E; nz
2
EEFs

1:188
where,
"
#

1 1
3 at30 E; nz h4
h5 E; nz 1
A10 E; nz B10 E; nz 1

x5 x1 x2 8B10 E; nz 2
"
p

A10 E; nz B10 E; nz ft30 E; nz g0 t30 E; nz
(

1=2

1=2 )#
1
1
0 B10 E; nz
0 A10 E; nz
fB10 E; nz g
fA10 E; nz g
2
A10 E; nz
2
B10 E; nz

4
1
t30 E; nz ah
1 1
3
B10 E; nz 4
p
8 A10 E; nz B10 E; nz x5 x1 x2
h
i
fB10 E; nz g2 ft30 E; nz g0 2B10 E; nz fB10 E; nz g0 t30 E; nz
where
t30 E; nz c0 ;
"
2
h2
nz p
dz
2x6
2 2 4 4 #
h
nz p
h
nz p
1 aE
a
;
dz
dz
2x3
4x3 x6
c0 E1 aE aE
h2
t10 E; nz ;
2m1
"
"
##

1 ah2 nz p 2 ah2 nz p 2 1 aE aE

t10 E; nz 1 m1
;
x4 2x3 dz
x1
x4
2x1 x6 dz
A10 E; nz
h2
t20 E; nz and
2m2
"
"
##

ah2 nz p 2 ah2 nz p 2 1 aE aE
t20 E; nz 1 m2

x2
x5
2x3 x5 dz
2x2 x6 dz
B10 E; nz
Thus, the EEM is a function of Fermi energy and the quantum number due to the
band non-parabolicity.
58

N2DT E
zmax
g
nX
v
2p

h5 E; nz H E Enz7
1:189
nz 1

where the sub-band energy Enz7 in this case can be written as

h2 nz p 2
h2 nz p 2
Enz7 1 aEnz7 aEnz7
1 aEnz7
2x6 dz
2x3 dz
"
2 2 2
2 #
2
2
h
nz p h
nz p
h
nz p
a

0
2x3 dz 2x6 dz
2m3 dz
1:190
In the absence of band-tails, the expression of 2D electron statistics can be

written as
zmax
gv X
2p n 1
n2D
1:191
where,
A0 EFs ; nz
; A0 E; nz
p

pt30 E; nz
1 1
3 at30 E; nz h4
; and
1
x5 x1 x2 8B210 E; nz
A10 E; nz B10 E; nz
s
X
LrT50 EFs ; nz
T50 EFs ; nz
T550 EFs ; nz
r1
J2D
c51 Enz7 Z1
nX
zmax
a0 egv

hE; nz fEdE
2phdz nz
c051 Enz7 E
min
nz 7
where
c51 E
c50
q
c250 4c51
2
ah4 1 1
aE 1 aE
c50 E

;
2x3 2x6
2x3
4x3 x6
ah4 1
E1 aE
c51 E
4x3 x6
1:192
59
For bulk specimens of IV-VI materials, the expressions of electron concentration

and the EP assume the forms
n0
v
MA4 EFb NA4 EFb
2p2
a0 egv
J 2
4p h
Z1 p
I17 E 0 0
0
0
0 E 0 MA4 E f EdE
I17
1:193
1:194a
E0
where

h
i
a4
2mt mt
MA4 EFb a5 JA1 EFb a3 EFb sA1 EFb sA1 EFb 3 ; a5
x A1 ;
2
3
a
h
"
#
2
a2
1
1
a2
;
xA1

16 m
4m
ml mt
t ml
l mt ml mt
JA1 EFb

sA1 EFb
AA EFb 2
AA EFb B2A EFb Ek; q 2B2A EFb F k; q
3
h3
i
sA1 EFb 2 A2A EFb 2B2A EFb

i1=2

1=2 h 2
A2A EFb s2A EFb
BA EFb s2A1 EFb
"p#
sA EFb
A2A EFb B2A EFb
k tan1
;q
BA EFb
AA EFb

q1=2 p
= 2;
AA EFb sA2 EFb s2A2 EFb 4sA3 EFb
qi1=2 p
h
BA EFb sA2 EFb s2A2 EFb 4sA3 EFb
= 2;
xA2 EFb
xA EF
; sA3 EFb 3 2 b ;
x2A1
xA1
"

a 1
a EFb 1 a EFb
1
1
xA2 EFb

2 2mt
2mt
2mt
mt ml
ml mt

#
a
1
a EFb 1 a EFb

2m
2m
mt mt 2ml
l
l
"

#
a EFb 1 a EFb
1
a EFb 1 a EFb 2
;
xA3 EFb

2mt
2m
2m
m
t mt
t
t

1
a EFb 1 a EFb
ah2
1
1
a2 EFb
;
a
3
;
2mt
2m
4 m
2m
m
t
t
t ml
l mt
1=2

2ml ml
1
1 a EFb a EFb

sA1 EFb
2ml
m
2m
a
h2
l
l
#1=2 31=2
"

1
1 a EFb a EFb 2 a EFb 1 a EFb
5
2ml
m
2m
m
l
l ml
l
sA2 EFb
60
E k; q is the incomplete Elliptic integral of second kind, F k; q is the incomplete

Elliptic integral of rst kind,
NA4 EFb
s
X
LrMA4 EFb ;
r1
I17 E 0
I15 E0
q
2 E 0 4I E 0
I15
16
;
2

2m
1
1
1
1
l mt
I15 E 0
aE0 and
2
ml ml
ml
ml
ah
I16 E 0

4m
l mt
E 0 1 aE0
4
ah
(b) The dispersion relation of the conduction electrons in bulk specimens of IVVI semiconductors in accordance with the model of Bangert and Kastner is given by
x1 Eks2 x2 Ekz2 1
1:194b
where
x1 E 2E1
R2
S2
Q2
0
0

Eg0 1 a1 E Dc 1 a2 E Dc 1 a3 E
and
2
Q
2
A
S
00
x2 E 2E1
;
Eg0 1 a1 E Dc 1 a3 E
2;
2 2:3 1010 evm 2 ; S2 4:6R
R
a1
1
1
1
; a2 0 ; a3 00 ;
Eg 0
Dc
Dc
D00c 3:28 eV;
D0c 3:07 eV;
2 1:3R
2;
Q
2 0:8 104 eVm2

A
The electron energy spectrum in heavily doped IV-VI materials in accordance

with this model can be expressed by using the methods as given in this chapter as
2

R

S2
2I4 ks2 c1 a1 ; E; Eg iD1 a1 E; Eg
c2 a2 ; E; Eg iD2 a2 ; E; Eg
Eg0
D0c
2
2

Q

2A
c3 a3 ; E; Eg iD3 a3 ; E; Eg
kz2
c1 a1 ; E; Eg iD1 a1 ; E; Eg
Eg0
D00c
Q
2

S
c3 a3 ; E; Eg iD3 a3 ; E; Eg
1:194c
00
Dc
61
where
1
1
1
1 ai E
; a2 0 ; a3 00 ; Gi
;
Eg
gg ai
Dc
Dc
"
#
"
#
1
X
1
2
2
2
p expui
expp =4sinhpui p
ci ai ; E; gg
ai gg p
p1
" p #
p
i 1; 2; 3 Di ai ; E; gg
expu2i ;
ai gg
a1
Therefore (1.194c) can be written as,

F1 E; gg ks2 F2 E; gg kz2 1
1:194d
where,
F1 E; gg 2c0 E; gg 1
2

R
C1 a1 E; Eg iD1 a1 ; E; Eg
Eg

S2
C2 a2 ; E; Eg iD2 a2 ; E; Eg
0
Dc
2

Q
00 C3 a3 ; E; Eg iD3 a3 ; E; Eg and
Dc
2

1 2A

C1 a1 ; E; gg iD1 a1 ; E; gg
F2 E; gg 2c0 E; gg
Eg
2

S Q
C3 a3 ; E; Eg iD3 a3 ; E; Eg
00
Dc
Since F1 E; gg and F2 E; gg are complex, the energy spectrum is also complex

in the presence of Gaussian band tails.
The EEMs can be written as
F 0 EFh ; gg
h2
m? EFh ; gg Real part of 12
2
F1 EFh ; gg
1:194e
F 0 EFh ; gg
h2
m11 EFh ; gg Real part of 22
2
F2 EFh ; gg
1:194f
It appears then that, the evolution of the masses needs an expression of the
carrier concentration, which in turn is determined by the DOS function.
62
NHD E, gg
q
gv 0
F
E,
g
;
F
E,
g
F
E;
g
F2 E, gg 1
3
1
g
g
g
3p2 3
1:194g

n0
s
X
gv
Real
part
of
F
E
;
g
LrF3 EFh ; gg
3
F
g
h
3p2
r1
1:194h
The EP can be written as

a0 egv
J 2 Real part of
6p h
Z1
F5 E0 ; gg F30 E0 ; gg f(E)dE0
1:194i
E0
where
F5 E0 ; gg
F22 E0 ; gg
q
F20 E0 ; gg F2 E0 ; gg
The 2D dispersion relation in this case assumes the form

ks2 F6 E; gg ; nz
1:194j
where,
F6 E; gg ; nz
1 F2 E; gg nz p=dz 2

F1 E; gg

m EF1HD ; gg ; nz
h2
Real part of F06 EF1HD ; gg ; nz
2
1:194k

zmax
gv X
F 0 E; gg ; nz HE Enz71HD
2p n 1 6
N2DT E
1:194l
63
where Enz71HD the quantized energy in this case and is given by

1 F2 Enz71HD ; gg pnz =dz 2
1:194m
The surface electron concentration can be expressed as

n0
nX
s
zmax
X
gv
Real part of
F6 EF1HD ; gg ; nz
LrF6 EF1HD ; gg ; nz
2p
r1
n 1
t
1:194n
J2D
nzmax
a0 egv X
hdz nz F 0 En
min
F22 Enz71HD ; gg
q
z71HD ; gg F2 Enz71HD ; gg E
Z1
F60 E; gg ; nz f EdE
nz71HD
1:194o
In the absence of band-tails the EEMs can be written as
h2 F 0 EF
m? EF 11
2 E
2 F11
F
1:194p
h2 F 0 EF
m11 EF 12
2 E
2 F12
F
1:194q
where
F11 E
2
2
2
R
S
Q
0
00
2E1
Ego 1 a1 E Dc 1 a2 E Dgo 1 a3 E
and
F12 E
2
2
A
S Q
00
2E1
Ego 1 a1 E Dgo 1 a3 E
It appears then that, the evolution of the masses needs an expression of the
carrier concentration, which in turn is determined by the DOS function.
NE) =
p
gv 0
F13 E; F13 E F11 E F12 E1
2
3p
1:194r
64

n0
s
X
gv
F
E
LrF13 EF
13
F
3p2
r1
1:194s

a0 egv
J 2
6p h
Z1
0
F15 E0 F13
E0 fEdE0
1:194t
E0
where
F15 E0
2
F12
E0
p
0 E0 F E0
F12
12
In the absence of band-tails, the 2D dispersion relation in this case assumes the
form
ks2 F16 E; nz
1:194u
where,
F16 E; nz
1 F12 Enz p=dz 2

F11 E

m EFs ; nz
h2 0
F EF ; nz
2 16 s
1:194v

zmax
gv X
F 0 E; nz HE Enz711
2p nz 1 16
N2DT E
1:194w
where Enz711 is the quantized energy in this case and is given by

1 F12 Enz711 ; gg pnz =dz 2
1:194x
65
The surface electron concentration can be expressed as

s
zmax
X
gv X
F16 EFs ; nz
LrF16 EFs ; nz
2p nz
r1
n
n0
1:194y
J2D
Z1
nzmax
2
F12
Enz711
a0 egv X
0
p
0
F16
E; nz f EdE:
hdz nz F12
Enz711 F12 Enz711
min
1:194z
Enz711

Semiconductors
The electron energy spectrum in stressed Kane type semiconductors can be written
[184186] as

kx
a0 E
2
2
2
ky
kz

1
c0 E
b0 E
1:195
h
i 0
2 2
0 E
K
0 E E C1 e 2C2 e0 xy 3E2g , C1 is the conwhere,
a0 E2 A E
;
K
1
3E
2B
D E
0
duction band deformation

potential,
e is the trace of the strain tensor ê which can be
2
3
exx exy 0
written as ê 4 exy eyy 0 5; C2 is a constant which describes the strain interac0
0
ezz
tion between the conduction and valance bands, Eg0 Eg E C1 e, B2 is the
momentum matrix element,
"
#
b0 exx b0 e
3
a
0
1
0 E 1
A
0 ;
Eg0
2Eg
2Eg0
1
a0 b0 2m
;
3
2n
b0 1 l m;
d0 p ;
3
3
l; m;

n are the matrix
p e

D0 E d0 3 xy0 ,
Eg
elements
of
the
strain
perturbation
operator,
66
0 E
0 E
K
K
2
and

; c0 E2
b0 E
1
L0 E
A0 E 2 D0 E
"
#
a0 C1 3b0 ezz b0 e

L0 E 1
0
Eg0
2Eg
Eg0
The use of (1.195) can be written as
E a1 kx2 E a2 ky2 E a3 kz2 t1 E 3 t2 E 2 t3 E t4
1:196a
where
a1
a2
a3
t1
t2
t3
t4

p.
b0
3
3

Eg C1 e a0 C1 e b0 exx e
2 exy d0 ;
2
2

p.
b0
3
3

Eg C1 e a0 C1 e b0 exx e
2 exy d0 ;
2
2

b0
3
Eg C1 e a0 C1 e b0 ezz e ;
2
2

3

2B2 ;
2

1 2B2 6Eg C1 e 3C1 e ;
2
h
i
1 2B2 3Eg C1 e2 6C1 eEg C1 e 2C22 e2xy and
2
h
i
1 2B2 3C1 eEg C1 e2 2C22 e2xy :
2
The (1.196a) can be written as

Ek 2 T17 kx2 T27 ky2 T37 kz2 q67 E3 R67 E2 V67 E q67
1:196b
where,
T17 a1 ; T27 a2 ; T37 a3 ; t1 q67 ; t2 R67 ; t3 V67 and t4 q67
Under the condition of heavy doping, (1.196b) can be written as
I4k2 T17 I1kx2 T27 I1ky2 T37 kz2 I1
q67 I6 R67 I5 V67 I4 q67 I1
1:196c
67
where,
ZE
E V 3 FVdV
I6
1:197
1

I6 E 3 I1 3E2 I7 3EI8 I9
1:198
In which,
ZE
I7
VFVdV
1:199
V 2 FVdV
1:200
V 3 FVdV
1:201
1
ZE
I8
1
ZE
I9
1
Using (1.4), together with simple algebraic manipulations, one obtains

gg
E 2
I7 p exp
g2g
2 p
!
1:202
"
!#
g2g
E
1 Erf
I8
gg
4
and
g3g
E2
I9 p exp
g2g
2 p
!"
E2
1 2
gg
1:203
#
1:204
Thus (1.197) can be written as

! #
!
" "
#

i
2 h
g
E
E
3
E
g
1 Erf
E 2 g2g p exp
4E 2 g2g
1:205
I6
2
gg
2
g2g
2 p
68
Thus, combining the appropriate equations, the dispersion relations of the

conduction electrons in HD stressed materials can be expressed as

P11 E; gg kx2 Q11 E; gg ky2 S11 E; gg kz2 1
1:206
where,
"

#
c0 E; gg T17 =2 1 Erf E=gg

P11 E; gg
;
D14 E; gg
" ( "
)
!#
!

i

gg
E
E
3 2
E 2 h 2
2
2
1 Erf
E gg p exp
4E gg
D14 E; gg q67
2
gg
2
g2g
2 p
#

q67

1 Erf E gg ;
R67 h0 E; gg V67 c0 E; gg
2
"

#

c0 E; gg T27 =2 1 Erf E; gg

and
Q11 E; gg
D14 E; gg
"

#


:
S11 E; gg
D14 E; gg
Thus, the energy spectrum in this case is real since the dispersion relation of the
corresponding materials in the absence of band tails as given by (1.195) has no
poles in the nite complex plane.
The EEMs along x, y and z directions in this case can be written as

2
h2 h
mxx EFh ; gg
c0 EFh ; gg T17 =2 1 Erf EFh =gg
2h

0

i
c0 EFh ; gg T17 =2 1 Erf EFh ; gg
D14 EFh ; gg
" "
!# (
!)##

1
EF2 h
EFh
T17
p exp
1 Erf
D14 EFh ; gg

2
gg
g2g
gg p
1:207

h2 h

2
myy EFh ; gg
2h

0

i
D14 EFh ; gg
" "
!# (
!)##

1
EF2 h
EFh
T27
p exp
1 Erf
D14 EFh ; gg

2
gg
g2g
gg p
1:208
69
and

2
h2 h
mzz EFh ; gg
c EFh ; gg T37 =2 1 Erf EFh =gg
2h 0

0

i
D14 EFh ; gg
" "
!# (
!)##

1
EF2 h
EFh
T37
p exp
1 Erf
D14 EFh ; gg

2
gg
g2g
gg p
1:209
Thus, we can see that the EEMs in this case exist within the band gap.
In the absence of band tails, gg ! 0 we get
mxx EF h2 a0 EF fa0 EF g0
1:210

0
mxx EF h2 b0 EF b0 EF
1:211
mxx EF h2c0 EF fc0 EF g0
1:212
and

gv
NHD E; gg 2 D100 E; gg
3p
where

2 3
q

0
D15 E; gg
D14 E; gg D14 E; gg
D100 E; gg D15 E; gg
2

3=2
0 i
D14 E; gg
and
D15 E; gg

D15 E; gg c0 E; gg T17 =2 1 Erf E=gg

1=2
c0 E; gg T37 =2 1 Erf E=gg
1:213
Using (1.213), the electron concentration at can be written as

"
#
s
X

gv
n0 2 I126 EFh ; gg
LrI126 EFh ; gg
3p
r1
1:214
70
where

3=2

D E ;g
I126 EFh ; gg 14 Fh g
D15 EFh ; gg
a0 egv
J 2
6p h
Z1
E0
D100 E0 ; gg S211 E0 ; gg
q fEdE0
0
0
S11 E ; gg S11 E0 ; gg
1:215
The dispersion relation of the conduction electrons in HD QWs of Kane type

semiconductors can be written as

P11 E; gg kx2 Q11 E; gg ky2 S11 E; gg pnz =dz2 1
1:216
The EEM can be expressed as

h2

m EF1HD ; gg ; nz A056 EF1HD ; gg ; nz
2
where,
A56 E; gg ; nz
h

2 i
p 1 S11 E; gg gz p=dz
q

P11 E; gg Q11 E; gg
1:217
From (1.217), it appears that the EEM is a function of Fermi energy, and size
quantum number and the same mass exists in the band gap.
Thus, the total 2D DOS function can be expressed as
N2DT E
zmax
g
nX
2p
nz 1

A056 EF1HD ; gg ; nz
1:218
The sub band energies Enz8 HD are given by

S11 Enz8 HD ; gg pnz =dz 2 1
1:219
71
The 2D surface electron concentration per unit area for QWs of stressed HD
Kane type compounds can be written as
zmax

gv X
T57HD EFs1HD ; gg ; nz T58HD EFs1HD ; gg ; nz
2p n 1
n2D
1:220a
where,

T57 EFs1HD ; gg ; nz A56 EF1HD ; gg ; nz
and
T58HD EF1HD ; gg ; nz
s
X
LrT57HD EF1HD ; gg ; nz :
r1

Z
nzmax
S211 Enz8HD ; gg
a0 egv X
q
hdz nz S0 E
min
11 nz8HD ; gg S11 Enz8HD ; gg E
J2D
A056 E; gg ; nz f EdE
nz8HD
1:220b
In the absence of band tails, the 2D electron energy spectrum in QWs of stressed
materials assumes the form
ky2
1
nz p=dz 2 1
2
2
a0 E
b0 E
c0 E2
kx2
1:221
The area of 2D wave vector space enclosed by (1.221) can be written as

AE; nz pP2 E; nz a0 Eb0 E
where
P2 E; nz 1 nz p=dzc0 E2 :
From (1.221), the EEM can be written as
m EFs ; nz
h2 2
P EFs ; nz a0 EFs b0 EFs 0
2
1:222
72

zmax
g
nX
v
N2DT E
2p
h6 E; nz HE Enz11
1:223
nz 1
in which,
h
h6 E; nz 2PE; nz fPE; nz g0 a0 Eb0 E fPE; nz g2 fa0 Eg0 b0 E
i

0
fPE; nz g2 b0 E a0 E
The sub band energies Enz11 are given by
c0 Enz11 nz p=dz
1:224
The 2D surface electron concentration per unit area for QWs of stressed Kane
type compounds can be written as
zmax
gv X
2p n 1
n2D
1:225
where

T61 EFs ; nz P2 EFs ; nz a0 EFs b0 EFs and
s
X
LrT61 EFs ; nz :
T62 EFs ; nz
r1
J2D
Z1
nzmax
a0 egv X
0
c0 Enz11
h6 E, nz f EdE
2hdz nz
min
1:226
Enz11
The DOS function for bulk specimens of stressed Kane type semiconductors in
the absence of band tail can be written as
D0 E gv 3p2 1 T0 E
1:227
73
where

0 Eb0 Ec0 E0 a0 Eb0 E0c0 E a0 E0 b0 Ec0 E
T 0 E a
Combining (1.227) with the Fermi-Dirac occupation probability factor and
using the generalized Sommerfeld lemma the electron concentration in this case can
be expressed as
n0 gv 3p2 1 M4 EF N4 EF
1:228
where,
M4 EF a0 EF b0 EF c0 EF and
s
X
LrM4 EF :
N4 EF
r1

a0 egv
J
12p2 h
Z1
T0 E 0 c0 E 0 0 fEdE0 :
1:229
E0
1.2.6 The EP from QWs of HD Te

The dispersion relation of the conduction electrons in Te can be expressed as [187]
E w1 kz2 w2 ks2 w23 kz2 w24 ks2 1=2
1:230
where, the values of the system constants are given in Table 1.1.
The carrier energy spectrum in HD Te can be written as
c3 E; gg w1 kz2 w2 ks2 w23 kz2 w24 ks2 1=2
1:231
The EEMs along kz and ks directions assume the forms

3
2
mz EFh ; gg
h 6
w3
7
41 q5c03 EFh ; gg
2w1
2
w 4w c E ; g
2
1 3
Fh
1:232
The conduction electrons of nCadmium Germanium Arsenide

can be described by three types of
band models
n-Indium Arsenide
n-Gallium Arsenide
n-Gallium Aluminum Arsenide
n-Mercury Cadmium Telluride
n-Indium Gallium Arsenide

Phosphide lattice matched to
Indium Phosphide
n-Indium Antimonide
n-Gallium Antimonide
7
8
Materials
0 0:42 ,
The values of Eg0 0:81 eV; D 0:80 eV; P 9:48 1010 eVm; 10 2:1; v0 1:49; x
1 1:024 eV, E
2 0 eV,
gv 1 and esc 15:85e0 are valid for the model of Seiler et al. The values E
3 1:132 eV, E
4 0:05 eV, E
5 1:107 eV, E
6 0:113 eV and E
7 0:0072 eV are valid for the
E
model of Zhang
(continued)
Eg0 1:337 0:73y 0:13y2 eV; D 0:114 0:26y 0:22y2 eV; mc 0:08 0:039ym0 ,
y 0:1896 0:4052x=0:1896 0:0123x; gv 1; esc 10:65 0:1320ye0 and
Wx; y 5:061 xy 4:381 x1 y 3:64xy 3:75fx1 ygeV
Eg0 0:2352 eV; D 0:81 eV; mc 0:01359m0 ; gv 1; esc 15:56e0 and W 4:72 eV
Eg0 0:302 1:93x 5:35 104 1 2xT 0:810x2 0:832x3 eV,

D 0:63 0:24x 0:27x2 eV; mc 0:1m0 Eg0 eV1 ; gv 1; mc 0:048m0
esc 20:262 14:812x 5:22795x2 e0 and W 4:23 0:813Eg0 0:083eV
Eg0 1:424 1:266x 0:26x2 eV, D 0:34 0:5x eV mc 0:066 0:088xm0 ;

gv 1; esc 13:18 3:12xe0 and W 3:64 0:14xeV
3. In accordance with two band model of Kane, Eg0 0:57 eV and mc 0:0365 m0
The values Eg0 0:3 eV, D 0:43 eV, mc 0:026m0 , gv 1, esc 12:25e0 and W 5:06 eV are valid for
three band model of Kane
The values Eg0 1:55 eV; D 0:35 eV; mc 0:07 m0 ; gv 1; esc 12:9e0 and W 4:07 eV are valid for
three band model of Kane. The values a13 1:97 1037 eVm4 and a15 2:3 1034 eVm4 . The values
a11 2132 1040 eVm4 ; a12 9030 1050 eVm5 ;
b11 2493 1040 eVm4 ; b12 12594 1050 eVm5 ; c11 30 1030 eVm3 ; c12 154 1042 eVm4
1. The values of the energy band constants in accordance with the generalized electron dispersion relation of
nonlinear optical materials are as follows
Eg0 0:57 eV; Dk 0:30 eV; D? 0:30 eV; mk 0:034m0 ; m? 0:039m0 ,
T 4 K; d 0:21 eV; gv 1; esc 18:4e0 esc and e0 T 4 K, are the permittivity of the semiconductor
material and free space respectively) and W 4 eV
2. In accordance with the three band model of Kane, the spectrum constants are given by
D Dk D? =2 0:33 eV; Eg0 0:57 eV; and d = 0 eV
Numerical values of the energy band constants
Table 1.1 The numerical values of the energy band constants of few materials
74
n-Cadmium Sulphide
n-Lead Telluride
Stressed n-Indium Antimonide
Bismuth
Mercury Telluride
Platinum Antimonide
n-Gallium Phosphide
Germanium
Tellurium
10
11
12
13
14
15
16
17
Materials
Table 1.1 (continued)
A9 3:6 108 meV m are valid for the model of Bouat et al. The values t1 0:06315 eV,
t2 10:0
h2 =2m0 , t3 5:55
h2 =2m0 , t4 0:3 1036 eVm4 , t5 0:3 1036 eVm4 ,
2
t6 5:55
h =2m0 , t7 6:18 1020 eVm2 and W 1:9708 eV are valid for the model
of Ortenberg and Button

The values A6 6:7 1016 meVm2 , A7 4:2 1016 meV m2 , A8 6 108 meV m2 and
Eg0 0:785 eV, mk 1:57m0 , m? 0:0807m0 and W 4:14 eV
(continued)
mk 0:92m0 , m? 0:25m0 , k0 1:7 1019 m1 , jVG j 0:21 eV, gv 6, gs 2 and W 3:75 eV
For valence bands, along h111i direction, W 5:5 eV, l1 1:09 eV, v1 0:17 eV, n 0:22 eV,
a 0:643 nm, I0 0:30eV2 , d00 0:33 eV, gv = 8, esc 30e0 and / 3:0 eV
The values mc 0:048m0 , Eg0 0:081 eV, B2 9 1010 eVm, C1c 3 eV, C2c 2 eV, a0 10 eV,
b0 1:7 eV, d 4:4 eV, Sxx 0:6 103 kbar1 , Syy 0:42 103 kbar1 ,
Szz 0:39 103 kbar1 , Sxy 0:5 103 kbar1 , exx rSxx , eyy rSyy , ezz rSzz , exy rSxy , r is the
stress in kilobar, gv = 1 are valid for the model of Seiler et al.
Eg0 0:0153 eV, m1 0:00194m0 , m2 0:313m0 , m3 0:00246m0 , m02 0:36m0 , gv = 3, gs = 2,
M2 0:128m0 , M20 0:80m0 and W 4:34 eV
mv 0:028m0 , gv = 1, e1 15:2e0 and W 5:5 eV
The values m
t 0:070m0 , ml 0:54m0 , mt 0:010m0 , ml 1:4m0 , Pk 141meV nm,
P? 486 meV nm, Eg0 190 meV, gv 4, esc 33e0 and W 4:6 eV are valid for the Dimmock model. The
2 1:3R
2 2:3 1019 eVm2 , Eg0 0:16 eV, s2 4:6R
2 , D0c 3:07 eV, Q
2,
values R
2
2
00
0:83 1019 eVm and W 4:21 eV are valid for the model of Bangert and Kastner.
Dc 3:28 eV, A
The values mtv 0:0965m0 , mlv 1:33m0 , mtc 0:088m0 , mlc 0:83m0 are valid for the model of Foley
et al. The values m1 0:0239m0 , m2 0:024m0 , m02 0:31m0 , m3 0:24m0 are valid for the Cohen model

mk 0:7m0 , m? 1:5m0 ,
k0 1:4 108 eVm, gv 1, esc 15:5e0 and W 4:5 eV

75
Lead Germanium Telluride
Cadmium Antimonide
Cadmium Diphosphide
Zinc Diphosphide
Bismuth Telluride
Antimony
Zinc Selenide
Lead Selenide
18
19
20
21
22
23
24
25
Materials
Table 1.1 (continued)
m
t 0:23m0 , ml 0:32m0 , mt 0:115m0 , ml 0:303m0 , Pk 138 meV nm, P? 471meV nm,
Eg0 0:28 eV, esc 21:0e0 and W 4:2 eV
The values b1 8:7 1021 eVm2 , b2 1:9 1021 eVm2 , b4 0:0875 eV, b5 1:9 1019 eVm2 and
W 3:9 eV are valid for the model of Chuiko
The values Eg0 0:145 eV, a11 3:25, a22 4:81, a33 9:02, a23 4:15, gs = 1, gv = 6 and / 5:3 eV are
valid for the model of Stordeur et al.
a22 5:98,
a33 11:61,
a23 7:54 and W 4:63 eV are valid for the model of
The values
a11 16:7,
Ketterson
m2 0:16m0 , D2 0:42 eV, Eg02 2:82 eV and W 3:2 eV
The values b1 8:6 1021 eVm2 , b2 1:8 1021 eVm2 , b4 0:0825 eV,
b5 1:9 1019 eVm2 and / 5 eV are valid for the model of Chuiko
The values A10 4:65 1019 eVm2 , A11 2:035 1019 eVm2 , A12 5:12 1019 eVm2 ,
A13 0:25 1010 eVm2 , A14 1:42 1019 eVm2 , A15 0:405 1019 eVm2 ,
A16 4:07 1019 eVm2 , A17 3:22 1010 eVm, A18 1:69 1020 eVm2 , A19 0:070 eV and
/ 2 eV are valid for the model of Yamada

The values Eg0 0:21 eV, gv = 4 and / 6 eV are valid for the model of Vassilev
76
77
and
3
2
ms EFh ; gg
h 6
w4
7
41 q5c03 EFh ; gg
2w2
2
w 4w c E ; g
2
2 3
Fh
1:233
The investigations of EEMs require the expression of electron concentration,

which can be written from (1.231) as
n0

gv
t1HD EFh ; gg t2HD EFh ; gg
2
3p
1:234a
where,

t1HD EFh ; gg 3w5HD EFh ; gg C3HD EFh ; gg w6 C33HD EFh ; gg ;
"
#
c3 EFh ; gg w24
w5HD EFh ; gg
2 ;
w2
2w2
q
w23 4w1 c3 EFh ; gg
;
C3HD EFh ; gg
2w1
s
X
w
w6 1 and t2HD EFh ; gg
Lrt1HD EFh ; gg
w2
r1
a0 egv
J
12p2 h
Z1
E0
q
w22 4w1 c3 E0 ; gg
c03 E0 ; gg
0
t1HD
E0 ; gg f EdE0
1:1234b
The 2D electron energy spectrum in HD QW of Te can be written using (1.230)

as
ks2
"
2
2 #1=2
pnz
pnz
2
w5HD E; gg w6
w7 w8HD E; gg
dz
dz
1:235
where,
w7
w4
p
w1
3=2
w2
"
and w28HD E; gg
w44 4c3 E; gg w2 w24 4w22 w23

4w1 w2 w24
78

3
2
m EF1HD ; gg ; nz
w8HD EF1HD ; gg w08HD EF1HD ; gg 7
h 6 0
4w5HD EF1HD ; gg q 5
2
w28HD EF1HD ; gg pnz =dz 2
2
1:236
The total DOS function in this case can be expressed as
z max
gv X
w0 E; gg HE Enz59HD
p nz1 5HD
N2DT E
1:237
where Enz59HD is the lowest positive root of the equation

w5HD Enz59HD ; gg w6
pnz
dz
"
2

w7 w28HD Enz59HD ; gg
2 #1=2
pnz

0 1:238
dz
The surface electron concentration is given by

n2D
nz max

gv X
t1HDTe EF1HD ; gg ; nz t2HDTe EF1HD ; gg ; nz
p nz1
1:239a
where,
"
2 #
pnz
t1HDTe EF1HD ; gg ; nz w5HD EF1HD ; gg ; nz w6
and
dz
t2HDTe EF1HD ; gg ; nz
s
X

Lr t1HDTe EF1HD ; gg ; nz
r1
J2D
nzmax
a0 egv X
hdz nz
min
q
w22 4w1 c3 Enz59HD ; gg
2w1 c03 Enz59HD ; gg
Z1

w05HD E; gg f EdE0
Enz59HD
1:239b
79
The 2D electron energy spectrum in QWs of Te in the absence of band tails

assumes the form

ks2 w5 E w6
pnz
dz
2

w7 w28 E
pnz
dz
2
1=2
1:240
where,
"
#
E
w24
w4 4Ew2 w24 4w22 w23
2 and w28 E 4
w5 E
w2 2w2
4w1 w2 w24
N2DT E
zmax
g
nX
v
t0 E; nz HE Enz12
p nz 1 40
1:241
where,
2
2
pnz
pnz 1=2 1=2
2
t40 E; nz w5 E w6
w7 w8 E

dz
dz
The sub-band energies Enz12 are given by
Enz12 w1 nz p=dz 2 w3 nz p=dz
1:242a
Using (1.240) the EEM can be expressed as

m EFs ; nz
h2 0
t EF ; nz
2 40 s
1:242b
The 2D surface electron concentration per unit area for QWs of Te can be written
as
n2D
nzmax
gv X
t40 EFs ; nz t41 EFs ; nz
p n 1
z
where
t41 EFs ; gz
s
X
r1
Lrt40 EFs ; nz :
1:243
80
J2D
nzmax q Z1
a0 egv X
0
w22 4w1 Enz 12

t40
E; nz f EdE0
2w1 hdz nz
1:244
Enz 12
min
The electron concentration and the EP for bulk specimens of Te in the absence of
band tails can, respectively, be expressed as
n0

gv
Mg EF Ng EF
2
3p
1:245
and
a0 egv
J
24w1 p2 h
Z1 q
w22 4w1 E 0 M9 E0 fEdE0
1:246
E0
where,

M9 EF 3w5 EF C3 EF w6 C33 EF ;
C3 EF 2w1 1
"
#
EF
w24
w5 EF
and
w2 2w22
q

s
X
w23 4w1 EF w3 andN9 EF
LrM9 EF :
r1
1.2.7 The EP from QWs of HD Gallium Phosphide

The energy spectrum of the conduction electrons in n-GaP can be written as [188]
"
#1=2
4 2

h2 ks2
h2 0 2

h
k
0
A ks kz2
E
ks2 kz2 jVG j2

jV G j
2m? 2mk
m2
k
1:247
0 1.
where, k0 and jVG j are constants of the energy spectrum and A
The dispersion relation of the conduction electrons in HD n-GaP can be
expressed as
"
#1=2
4 2

h2 ks2
h2 0 2

h
k
0
c3 E; gg
A ks kz2
ks2 kz2 jVG j2

j VG j
2m? 2mk
m2
k
1:248
81
The EEMs assume the forms as

mz EFh ; gg

2 c03 EFh ; gg
h
1 C bD C 2 4bD2 4bCc3 EFh ; gg
b
1=2 i
4bCD 4b2 c3 EFh ; gg D
1:249
and
ms EFh ; gg
h2
t11 c03 EFh ; gg t41 t50 EFh ; gg
2
1:250
where,
b
p
h2
1
h2
2
2
0 b; t41 g3 ;
;
a
t
;
C

h
k
=m
;
D
A
j
j;
0
G
11
k
a
2a2
2mk
2m?
g3 4abc 4a2 c; t52 EFh ; gg g2 4aCc3 EFh ; gg g3 1 ; g2 4a2 b2 C 2 4aCD
The electron concentration can be expressed as

"
#
s
X
gv
LrI127 EFh ; gg
n0 2 I127 EFh ; gg
4p
r1
where
I127 EFh ; gg M1HD EFh ; gg
q
M1HD EFh ; gg 2t11 c3 EFh ; gg t21 t81 t91 c3 EFh ; gg
t31 =3h3; EFh ; gg t41 =2
q
h; EFh ; gg h2 EFh ; gg t5 EFh ; gg
q
t5 EFh ; gg t41 t5 EFh ; gg =2

q

h; EFh ; gg h2 EFh ; gg t5 EFh ; gg

q
ln
;

t5 EFh ; gg

g1
t21 2 ; g1 C 2aD;
2a
b
4
2
2 2
4t41
t21 t31 4t31
t41 g2 g3 1 ; t31 ;
t81 t41
a
2
2
2 2
t91 4t11 t31 t41
8t11 t21 t31
16t31
t41 aCg3 1 ;
q
p
h EFh ; gg t31 21 t61 t71 c3 EFh ; gg t81 t91 c3 EFh ; gg ;
2
t61 t41
2t21 t31 and t71 2t11 t31
1:251
82

a0 egv
J 2 p
4p m11
Z1
I127 E0 ; gg 0 fE dE0
c0100 E0 ; gg
1:252
E0
where
c100 E0 ; gg 2c3 E 0 ; gg 2VG
4h4 k04
4h2 k02 8VG h2 k02
2

4V

G
mk
mk
mk 2
4c3 E 0 ; gg h2 k02 1=2 1=2

mk
The 2D dispersion relation in QW of HD GaP can be expressed following

(1.248) as
ks2 t11 c3 E; gg t21 t31
pnz 2
pnz
t41 2 t52 E; gg 1=2
dz
dz
1:253
The EEM in this case can be written following (1.253) as

h2
m EF1HD ; gg ; nz
t11 c03 EF1HD ; gg t41 t5 EF1HD ; gg t50 EF1HD ; gg
2

pnz
2 t52 EF1HD ; gg 1=2
dz

1:254
The total DOS function up to Fermi level assumes the form

z max
gv X
t11 c03 EF1HD ; gg t41 t5 EF1HD ; gg t50 EF1HD ; gg
2p nz1
pnz
2 t52 EF1HD ; gg 1=2 HEF1HD Enz8THD
dz
1:255
N2DT EF1HD ; gg
where, Enz8THD is given by the equation

t11 c3 Enz8THD ; gg t21 t31
pnz 2
pnz
t41 2 t52 Enz8THD ; gg 1=2 0 1:256
dz
dz
83
The surface electron concentration in QW of HD n-GaP can be written as

zmax

gv X
t3HDGaP EF1HD ; gg ; nz t4HDGaP EF1HD ; gg ; nz
p nz1
n5
1:257a
where,
t1HDGaP EF1HD ; gg ; nz t11 c3 EF1HD ; gg ; nz t21 t31
pnz 2
dz
pnz
t41 2 t52 EF1HD ; gg ; nz 1=2
dz
s
X
t4HDGaP EF1HD ; gg ; nz
Lrt3HDGaP EF1HD ; gg ; nz
r1

zmax
a0 egv X
q
c0101 Enz8THD ; gg ; nz 1

4dz p mk nz min
J2D
Z1
c101 E; gg ; nz f EdE
Enz8THD
1:257b
where
c101 E; gg ; nz t11 c03 E; gg t41 t5 E; gg t50 E; gg
pnz 2
t52 E; gg 1=2
dz
The 2D electron dispersion relation in size-quantized n-GaP in the absence of

band tails assumes the form
h
i1=2
E aks2 Cnz p=dz 2 jVG j Dks2 jVG j2 Dnz p=dz 2
1:258

The sub-band energy Enz13 are given by
h
i1=2
Enz13 Cpnz =dz 2 jVG j jVG j2 Dpnz =dz 2
1:259

ks2 t42 E; nz
1:260
84
in which,

n
h
io1=2
t42 E; nz f2aE t1 Dg 2aE t1 D2 4a2 E t1 2 t2
;
t1 jVG j C pnz =dz 2 and t2 jVG j2 Dpnz =dz 2 :
The total DOS function is given by
N2DT E
nzmax
0

gv X
t42 E; nz H E Enz13
2
4pa n 1
1:261a
Using (1.260) the EEM can be expressed as

m EFs ; nz
h2 0
t EF ; nz
2 42 s
1:261b
The electron statistics in QWs in n-GaP assumes the form

n2D
zmax
g
nX
v
4pa2 n 1
z
t43 EFs ; nz
s
X
1:262
Lrt42 EFs ; nz
r1
where,
t43 EFs ; nz
s
X
Lrt42 EFs ; nz
r1

zmax
X
a0 egv
q
c0102 Enz13 1

8dz pa2 mk nzmin
J2D
Z1
0
t42
E; nz f EdE
Enz13
where
c102 Enz13 2Enz13 2VG
2h2 k0
4h4 k04 8VG h2 k02
2

4V

G
mk
mk
mk 2
4Enz13 h2 k02 1=2 1=2

mk
1:263
85
The EEMs in bulk specimens of n-GaP in the absence of band tails can be
written as
ms EF
h2
t11 t41 t50 EF
2
1:264
and
mz EF
h2
1 C4bCEF 4b2 D2 C2 4bCD1=2
b
1:265
where
t5 EF
g2 4aCEF 1=2

g3
The electron concentration and the EPin this case assume the forms
n0
gv
M1 EF N1 EF
4p2
a0 egv
q
J
16p2 mk
Z1
E0
M10 E 0
f EdE 0
c0102 E0
1:266
1:267
where
p
M1 EF 2t11 EF t21 t91 EF t81
q
t31
t41
/3 EF /EF /2 EF t5 EF
3
2
q

/E
/2 EF t5 EF

F
t41 t5 EF
;
p
ln

2
t5 EF

p 1
/EF t31 2 t61 EF t71 t81 t91 EF 1=2
s0
X
N1 EF
LrM1 EF
r1
and
c102 E 0 2E0 2VG
2h2 k02
4h2 k 4 8VG h2 k02 4E 0 h2 k02 1=2 1=2
4VG2 20

:

mk
mk
mk
mk
86
1.2.8 The EP in QWs of HD Platinum Antimonide

The dispersion relation for the n-type PtSb2 can be written as [189]
E k0
a2 2
a2
a2
a2
a4
k lks2 E d0 v k 2 n0 ks2 I k4
4
4
4
4
16
1:268
The (1.268) assumes the form

E x1 ks2 x2 kz2 E d0 x3 ks2 x4 kz2 I1 ks2 kz2 2
1:269
where
x1 k0
a2
a2
a2
a2
a2
a2
a2
l ; x2 k0 ; x3 n0 t ; x4 t ; I1 I 2 ;
4
4
4
4
4
4
4
k0 ; l; d0 ; m; n0 and a are the band constants.

The carrier dispersion law in HD PtSb2 can be written as
T11 ks4 ks2 T21 E; gg T31 kz2 T41 kz4 T51 E; gg kz2 T61 E; gg 0
1:270
where,
T11 I1 x2 x3 ; T21 E; gg x1 d0 x1 c3 E; gg x3 c3 E; gg ;
T31 2I1 x2 x4 x2 x3 ; T41 2I1 x2 x4 ;
T51 E; gg x2 c0 E; gg x4 c3 E; gg x2 c3 E; gg ;
T61 E; gg c8 E; gg c0 c3 E; gg and
c8 E; gg 2h0 E; gg 1 Erf E=gg 1
The EEMs are given by
ms EFh ; gg
ms EFh ; gg
h2
T 0 EF ; g
2T11 21 h g
0
0
T21 EFh ; gg T21
EFh ; gg 2T11 T61
EFh ; gg
and
2 E ; g 4T T E ; g
T21
Fh g
11 61 Fh g
1:271
h2
0
0
T 0 EF ; g T51 EFh ; gg T51
EFh ; gg 2T41 T61
EFh ; gg
2T41 51 h g
2
T51
EFh ; gg 4T41 T61 EFh ; gg 1=2
1:272
87
The electron concentration assumes the form

"
#
s
X
gv
n0 2 I128 EFh ; gg
LrI128 EFh ; gg
3p
r1
1:273a
where,
I128 EFh ; gg M6HD EFh ; gg ;
M6HD EFh ; gg T91HD EFh ; gg q2HD EFh ; gg T101
T91HD EFh ; gg
T21 EFh ; gg
;
2T11
q2HD EFh ; gg 2T41 1 T51 EFh ; gg
q32HD EFh ; gg
T11 J3 EFh ; gg
3
q
2 E ; g 4T T E ; g 1=2
T51
Fh g
41 61 Fh g
T101 T31 =2T11 ;

J3 EFh ; gg
q2HD EFh ; gg 2
A3HD EFh ; gg B23HD EFh ; gg E0 gEFh ; gg ; tEFh ; gg
3
A23HD EFh ; gg B23HD EFh ; gg F0 gEFh ; gg ; tEFh ; gg
q2HD EFh ; gg 2
A3HD EFh ; gg q22HD EFh ; gg B23HD EFh ; gg q22HD EFh ; gg 1=2 ;
3
E0 gEFh ; gg ; tEFh ; gg and F0 gEFh ; gg ; tEFh ; gg are the incomplete elliptic

integrals of second and rst respectively,
q
1
2 E ; g 4T E ; g ;
A23HD EFh ; gg T12 EFh ; gg T12
Fh g
13 Fh g
2
2
T12 EFh ; gg T7 EFh ; gg =T 61 T61 T31 4T11 T41 ;
T7 EFh ; gg 2T31 T21 EFh ; gg 4T11 T51 EFh ; gg ;
T13 EFh ; gg T8 EFh ; gg =T 8 ;
2
EFh ; gg 4T11 T61 EFh ; gg ;
T8 EFh ; gg T21
q
1
2 E ; g 4T E ; g ;
B23HD EFh ; gg T12 EFh ; gg T12
Fh g
13 Fh g
2p
T 11
T 61 =2T11 tEFh ; gg B3 EFh ; gg =A3 EFh ; gg ;
gEFh ; gg sin1
q2 EFh ; gg

B3 EFh ; gg
88
a0 egv
6p2 h
Z1
q
U100 E 0 ; gg I128 E 0 ; gg 0 f EdE 0
0 E 0 ; g
U100
g
E0
1:273b
where
U100 E 0 ; gg 2T41 1 T51 E0 ; gg
q
2 E 0 ; g 4T T E 0 ; g
T51
41 61
g
g
From (1.270) the dispersion relation in QWs of HD PtSb2 can be expressed as

T11 ks4 P1HD E; gg ; nz ks2 P2HD E; gg ; nz 0
1:274
where,
P1HD E; gg ; nz T21 EFh ; gg T31 pnz =dz
P2HD E; gg ; nz T41 pnz =dz 4 T51 EFh ; gg pnz =dz 2 T61 EFh ; gg
(1.274) can be written as
ks2 A60 E; gg ; nz
1:275
where,
A60 E; gg ; nz P1HD E; gg ; nz
q
P21HD E; gg ; nz 4T11 P2HD E; gg ; nz
The EEM assumes the form

m EF1HD ; gg ; nz
h2 0
A EF1HD ; gg ; nz
2 60
1:276
The surface electron concentration is given by

z max
gv X
A60 EF1HD ; gg ; nz B60 EF1HD ; gg ; nz
2p nz1
n0
where,
B60 EF1HD ; gg ; nz
s0
X
r1
LrA60 EF1HD ; gg ; nz
1:277a
89
J2D
nX
zmax
a0 egv
2hdz nz
min
q
1
U100 Enz100 ; gg Z
0 E
U100
nz100 ; gg
1:277b
Enz100
where Enz100 is the lowest positive root of the equation

P2HD Enz100 ; gg ; nz 0
1:277c
From (1.269), we can write the expression of the 2D dispersion law in QWs of nPtSb2, in the absence of band tails as
ks2 t44 E; nz
1:278
where,

q
t44 E; nz 2A9 1 A10 E; nz A210 E; nz 4A9 A11 E; nz ;
"
(
2 )
pnz
A9 I1 x1 x3 ; A10 E; nz x3 E x1 E d0 x4
dz
2
4 #
pnz
pnz
x2 x3
2I1
dz
dz
and
" "
#
2
pnz 2
pnz
A11 E; nz E E d0 x4
x2
dz
dz
"
#
2
4 #
pnz
pnz
E d0 x4
I1
dz
dz

The area of ks space can be expressed as

AE; nz pt44 E; nz
1:279
The total DOS function assumes the form

zmax
gv X
t0 E; nz HE Enz14
2p n 1 44
N2DT E
1:280
90
where the quantized levels Enz14 can be expressed through the equation
"
1
Enz14 2
"
x2
pnz
dz
2
2 #
pnz
d0 x 4
dz
9 3
8"
2
2 #2 " 4
4
2 #=1=2
<
pnz
pnz
pnz
pnz
pnz
7
d0 x 4
4 I1
x2 x4
x 2 d0
x
5
;
: 2 dz
dz
dz
dz
dz
1:281a
Using (1.278), the EEM in this case can be written as
m EFs ; nz
h2 0
t EF ; nz
2 44 s
1:281b
The electron statistics can be written as

zmax
gv X
2p n 1
n2D
1:282
where
t45 EF2D ; nz
S
X
Lrt44 EF2D ; nz
r1
J2D
nzmax p Z1
x100 Enz14
a0 egv X
0
t44
E; nz f EdE
dz h n z
x0100 Enz14
min
1:283
Enz14
where
x100 E x2 E d0 x2 x4 E2 4x2 x4 I1 E2 d0 E1=2 x2 E
d0 x2 x4 E2x2 x4 I1 1 :
1.2.9 The EP from QWs of HD Bismuth Telluride

The dispersion relation of the conduction electrons in Bi2Te3 can be written as
[190192]
91
1 kx2 x
2 ky2 x
3 kz2 2x
4 kz ky
E1 aE x
1:284
where
x1
h2
h2
h2
h2
a11 ; x2
a22 ; x3
a33 ; x4
a23
2m0
2m0
2m0
2m0
in which a11 ; a22 ; a33 and a23 are system constants.

The dispersion relation in HD Bi2Te3 assumes the form
1 kx2 x
2 ky2 x
3 kz2 2x
4 kz ky
c2 E; gg x
1:285
The EEMs can, respectively, be expressed as

mx EFh ; gg
h2 0
c EF ; g
2
w1 2 h g
1:286
my EFh ; gg
h2 0
c EF ; g
2
w2 2 h g
1:287
mz EFh ; gg
h2 0
c EF ; g
2
w3 2 h g
1:288
The DOS function in this case is given by

q
c2 E; gg c02 E; gg
2m0
NE 4pgv 2 3=2 p
h
a11 a22 a33 4a11 a223
1:289
Thus combining (1.289) with the Fermi Dirac occupation probability factor, the
electron concentration can be written as
n0
gv 2m0 3=2
a11 a22 a33 4a11 a223 1=2 U1HD EFh ; gg U2HD EFh ; gg
3p2 h2
1:290a
where,
U1HD EFh ; gg c2 EFh ; gg 3=2 ; U2HD EFh ; gg
s
X
r1
LrU1HD EFh ; gg
92

p q
Z1
3
2pa0 egv x
1 2m0 3=2
2
J
a11 a22 a33 4a11 a23 2
c2 E0 ; gg f EdE0
h

h
E0
1:290b
The dispersion relation in QWs of HD Bi2Te3 can be expressed as
1
c2 E; gg x
pnx 2
2 ky2 x
3 kz2 2x
4 kz ky
x
dx
1:291
The EEM can be expressed as

m0
c02 EF1HD ; gg
m EF1HD ; gg p
2
a11 a33 4a23
1:292
The surface electron concentration can be written as

n2D
nzmax
gv X
R60 EF1HD ; gg ; nz R61 EF1HD ; gg ; nz

2p n 1
1:293a
2m0 c02 EF1HD ; gg 2m0 pnz

1
R60 EF1HD ; gg ; nz p
2 a11 and
dx
h
h2
a11 a33 4a223
s
X
LrR60 EF1HD ; gg ; nz
R61 EF1HD ; gg ; nz
r1

q
1
p nX
z max
c2 Enz90HD ; gg Z
a0 egv x1
J
R060 E; gg ; nz f EdE
c02 Enz90HD ; gg
hdz
nz min
1:293b
Enz90HD
The 2D electron dispersion law in QWs of Bi2Te3 in the absence of band tails
assumes the form
E1 aE x1
nx p 2
x2 ky2 x3 kz2 2x4 kz ky
dx
1:294
93
The area of the ellipse is given by

p
2m0 E1 aE
nx p 2
1
An E; nx p
x
dx
h2
a22 a33 4a223
1:295

N2DT E
nX
x max
gv m0
q
1 2aEHE Enz15
ph2 a22 a33 4a223 nx 1
1:296
where, Enz15 can be expressed through the equation

nx p 2
dx
1:297a
m0 1 2aEFs
m EFs p
a22 a33 4a223
1:297b
Enz15 1 aEnz15 x1
The EEM in this case assumes the form as
The electron concentration can be written as

1
0
n2D
nx max

kB Tgv B
m0
CX
qA
1 2aEF0 gn15 2akB TF1 gn15
2 @
p
h
a a 4a2 nx 1
22 33
23
1:298
where,
gn15
EFs Enz15
kB T

J2D
p
p
nX
z max
Enz15 1 aEnz15
a0 egv kB T x1
p
1 2aEnz15 F0 gn15
3
2
ph dz a22 a23 4a23 nz min 1 2aEnz15
2akB TF1 gn15 :
1:299
94
1.2.10 The EP from QWs of HD Germanium

It is well known that the conduction electrons of n-Ge obey two different types of
dispersion laws since band non-parabolicity has been included in two different ways
as given in the literature [193195].
(a) The energy spectrum of the conduction electrons in bulk specimens of n-Ge
can be expressed in accordance with Cardona et al. [193, 194] as
"
2 #1=2
Eg20
Eg0 h2 kz2
h
2
Eg0 ks
E

2
2mk
4
2m?
1:300
where in this case mk and m? are the longitudinal and transverse effective masses
along h111i direction at the edge of the conduction band respectively
h2 kz2
2 ks2
h
E1
aE
a
2m?
2mk
!2
h2 kz2
1 2aE
2mk
!
1:301
The dispersion relation under the condition of heavy doping can be expressed
from (1.301) as
h2 kz2
2 ks2
h
c
E;
g
a
2
g
2m?
2mk
!2
1 2ac3 E; gg
h2 kz2
2mk
1:302

ms EFh ; gg m? c02 EFh ; gg
1:303
and
mz EFh ; gg mk c03 EFh ; gg
c03 EFh ; gg 1 2ac3 EFh ; gg c02 EFh ; gg

q
1 2ac3 EFh ; gg 2 4ac2 EFh ; gg
1:304
n0
q "
#
2mk
s
X
I129 EFh ; gg
LrI129 EFh ; gg
3
8pgv m?
h
r1
1:305a
95
where,
I129 EFh ; gg M8HD EFh ; gg ;
a
M8HD EFh ; gg c3 EFh ; gg 1=2 c2 EFh ; gg c23 EFh ; gg
5
c3 EFh ; gg
1 2ac3 EFh ; gg

3
q
Z1
c200 E0 ; gg
4pa0 egv q
0
0
f EdE0
J
m
I
E
;
g

2m
129
g
?
k
c0200 E0 ; gg
h3
E0
1:305b
where
h2
h2
h2
c200 E; gg 2a 2 1 1 2ac3 E; gg 1 2ac3 E; gg 2
2mk
2mk
2mk
2
h
4c2 E; gg 2 1=2
2mk
In the presence of size quantization, the dispersion law in QW of HD Ge can be
h2 nz p=dz 2
2 ks2
h
c2 E; gg a
2mk
2mk
!2
1 2ac3 E; gg
h2 nz p=dz 2
2mk
1:306a
The EEM assumes the form

ms EF1HD ; gg ; nz m? c02 EF1HD ; gg
ah2 nz p 2 0
c3 EFh ; gg
mk dz
1:306b
The surface electron concentration per unit area is given by

n2D
nzmax
gv m? X
R1 EF1HD ; gg ; nz S1 EF1HD ; gg ; nz
ph2 nz 1
where,
h2 nz p=dz 2
R1 EF1HD ; gg ; nz c2 EF1HD ; gg a
2mk
1 2ac3 EF1HD ; gg
!2
h2 nz p=dz 2

2mk
1:307a
96
and
S
X
S1 EF1HD ; gg ; nz
LrR1 EF1HD ; gg ; nz
r1
J2D
nz max
a0 egv m? X
3
dz p
h nz min
q
c200 Enz100HD ; gg
c0200 Enz100HD ; gg
Z1
R01 E; gg ; nz f EdE
1:307b
Enz100HD

c2 Enz100HD ; gg a
h2 nz p 2 2
h2 nz p 2

1
2ac
E
;
g

0
n
3
g
z100HD
2mk dz
2mk dz
In the presence of size quantization along kz direction, the 2D dispersion relation

of the conduction relations in QWs of n-Ge in the absence of band tails can be
written by extending the method as given in [187] as
2
h2 kx2 h ky2
cE; nz
2m1 2m2
1:308
where,
m1 m? ; m2
2
m? 2mk
3
3
2 " 2 2 #2
2

h
n
p
h

n
p
z
z
5
cE; nz 4E1 aE 1 2aE
a
2m3 dz
2m3 dz
and
m3
3mk m?
2mk m?
The area of ellipse of the 2D surface as given by (1.308) can be written as

AE; nz
p
2p m1 m2
h2
cE; nz
1:309a
97

m EFs ; nz
p
m1 m2 cEFs ; nz 0
1:309b
The DOS function per sub-band can be expressed as

N2D E
"
p
m1 m2
ph2
!#
h2 pnz 2
1 2aE 2a
2m3 dz
1:310
The total DOS function is given by

"
!#
nX
zmax
4 p
h2 pnz 2

N2DT E 2 m1 m2
1 2aE 2a
HE Enz16
2m3 dz
ph
nr 1
1:311
where, Enz16 is the positive root of the following equation
Enz16 1 aEnz16 1 2aEnz16
!
!2
h2 pnz 2
h2 pnz 2
0
a
2m3 dz
2m3 dz
1:312
Thus combining (1.311) with the Fermi Dirac occupation probability factor, the
2D electron statistics in this case can be written as
n2D
p
zmax
m1 m2 kB T nX
p
h2
nr 1
A1 nz 2agnz F0 gnz 2akB T F1 gnz 1:313

16
16
16
where
h
i

1
EF2D Enz16 :
A1 nz 1 2ah2 =2m3 pnz =dz 2 and gnz16
kB T
J2D
p nz max p
c201 Enz16
a0 e 4kB T m1 m2 X
A1 nz 2agnz F0 gnz
0
16
16
dz
h
ph
c201 Enz16
nz min
2akB T F1 gnz
16
1:314
The expressions of EEMs in bulk specimens of Ge in the absence of band tails

can be written following (1.301) as
98
mz EF mk
1:315
ms EF m? 1 2aEF
1:316
The DOS function for bulk specimens of Ge in the absence of band tails can be

NE 4pgv
2mD
h2
32 "
#

2
1
5 3 18a m11 2 7=2

3
E aE 2
E
m

m
;
m
D
?
k
6
5
h2
1
2
1:317
Using (1.317), the electron concentration in bulk specimens of Ge can be written
as
"
#

5
189
m11 kB T 2
akB T
n0 Nc1 F12 g akB TF32 g
F72 g ;
4
4
h2

3
2pmD kB T 2
Nc1 2gv
h2
1:318

J

4a0 egv p 1=2
5 2 2
108ak3B T3 mk 2
3=2
ak
F
g

T
F
g
F3 g0
D
0
2
0
0
k
h3
3 B
5
h2
1:319
(b) The dispersion relation of the conduction electron in bulk specimens of n-Ge
can be expressed in accordance with the model of Wang and Ressler [195] can be
written as
!2
2 2 2
2 2 2 2!
2 kz2
h
h kz
kz
h
h2 kz2
h2 ks2
h ks
E
a4
a5
a6
2mk 2m?
2m?
2m?
2mk
2mk
where,
a4 b4
2m?
; b4 1:4b5 ;
h2
4m? mk
a
h4
m? 1 m0 1 2 ; a5 a7
; a7 0:8b5 and a6
4
h4

2mk
0:005b5 2 2
h
b5
1:320
99
The energy spectrum under the condition of heavy doping can be written as
!2
2 2 2
2 2 2 2!
2 kz2 h2 ks2
h
h kz
h2 kz2
h ks
h ks
a6
a4
a5
c3 E; gg
2mk 2m?
2m?
2m?
2mk
2mk
1:321a
The sub band energy and the 2D Dispersion relation can respectively be
expressed as
a3

a8
nz p 2
nz p
nz p
a10 4 a11 2 a11 EnzHD24 ; gg 1=2 0
dz
dz
dz

1=2
h2 ks2
a8 a9 kz2 a10 kz4 a11 kz2 a12 E; gg

2m?
1:321b
1:321c
where
q
1
a5 h2
1 h2
; a9
; a10
a5 2 4a4 a6 ;
2a4
2a4 2mk
2a4 2mk
"
#

2mk 4a4 2a5
2mk 1 4a4 c3 E; gg
2
and a12 E; gg 2
a5 2 4a4 a6
h a5 2 4a4 a6
h
a8
a11

mk c03 EFh ; gg
mz EFh ; gg q
1 4a6 c3 EFh ; gg
1:322
m? c03 EFh ; gg

m? EFh ; gg q

1 4a4 c3 EFh ; gg
1:323
The electron concentration in HD Ge in accordance with the model of Wang and

Ressler can be expressed as
n0
m? gv
I3 EFh ; gs I4 EFh ; gs
p2 h2
1:324a
100
where

a9
I3 EFh ; gs a8 q10 EFh ; gg q310 EFh ; gs a10 J10 EFh ; gs
3
12 h
p
i12
m
1 k
q10 EFh ; gs
1 1 4a6 c3 EFh ; gs
h

a6
1 EFh ; gg
A
E0 kEFh ; gg ; qEFh ; gg :
J10 EFh ; gg
3
2
EFh ; gg B
21 EFh ; gg 2B
21 EFh ; gg F0 kEFh ; gg ; qEFh ; gg
A
1
1 EFh ; gg
A
2 EFh ; gg 2B
21 EFh ; gg
q210 EFh ; gg A
1
3
"
#1
q
2 EFh ; gg q2 EFh ; gg 2
A
1
10
2 EFh ; gg 1

a
a211 4
;
A
a212 EFh ; gg ;
11
1
2
2
1 EFh ; gg q10 EFh ; gg
2
B
q
21 EFh ; gg 1
a11
a211 4
a212 EFh ; gg ;
B
2
q10 EFh ; gg
;
kEFh ; gg tan1
B1 EFh ; gg
""
##
2 EFh ; gg B
21 EFh ; gg
A
1
qEFh ; gg
2 EFh ; gg
A
1
and
I4 EFh ; gg
s
X
LrI3 EFh ; gs
r1
a0 egv m?
3
Z1
2ph
E0
I30 E0 ; gg
q
c203 E0 ; gg
c0203 E0 ; gg
f EdE0
1:324b
where
h2 2 1 h2

c203 E; gg 2a6
2m
2mk
s
h2 2
h2
4a6
c E; gg
2m
2m 3
The dispersion relation in QW of HD Ge can be written as

1=2
h2 ks2
nz p 2
nz p 4
nz p 2
a8 a9 a10 a11 a12 E; gg
;
dz
dz
dz
2m?
1:325
101

h2 ks2
A75 E; gg ; nz
2m?
1:326
where,
A75 E; gg ; nz a8 a9
nz p 2
nz p
nz p
a10 4 a11 2 a12 E; gg 1=2
dz
dz
dz
The EEM is given by

ms EF1HD ; gg ; nz m? A075 EF1HD ; gg ; nz
1:327
The electron concentration per unit area assumes the form

n2D
nz max
m? gv X
A75 EF1HD ; gg ; nz A76 EF1HD ; gg ; nz
ph2 nz 1
1:328a
where,
A76 EF1HD ; gg ; nz
s
X
LrA75 EF1HD ; gg ; nz
r1
J2D
nzmax
a0 egv m? X
dz p
h3 n z
min
q
d203 Enz205HD ; gg
d0203 Enz205HD ; gg
Z1
1:328b
Enz205HD

A75 Enz205HD ; gg ; nz 0
1:328c
and
d203 E; gg 21 d201
q
2a8 a9 a10 3
d2201 4d202 E; gg ; d201 E; gg
a9 2 a10 2
102
and
d202 E; gg
a8 2 a12 E; gg a10 2
a9 2 a10 2
The 2D dispersion law in the absence of band tails can be expressed as

E A5 nz A6 nz b a4 b2
1:329
where,
A5 nz
2 pnz 2
h
h2 pnz
h2 pnz
1 a6 2 ; A6 nz 1 a5 2

2m3 dz
2m3 dz
2m3 dz
and
b
2
h2 kx2 h ky2
:
2m1 2m2

2
h2 kx2 h ky2
I1 E; nz
2m1 2m2
1:330
where,
I1 E; nz 2a4 1 A6 nz A26 nz 4a4 E 4a4 A5 nz 1=2
From (1.330), the area of the 2D ks-space is given by
AE; nz
p
2p m1 m2
h2
I1 E; nz
1:331a
Using (1.331a) in this case can be expressed as

m EFs ; nz
p
m1 m2 I1 EFz ; nz 0
1:331b
The DOS function per sub-band can be written as

4
N2D E
p
p
m1 m2
h
fI1 E; nz g0
1:332
103
where
fI1 E; nz g0
o
I1 E; nz
oE

N2DT E
p
zmax
m1 m2 nX
ph2
fI1 E; nz g0 HE Enz17
1:333
nz 1

where, the sub-band energy Enz17 are given by
Enz17
h2 nz p 2
h2 nz p
1 a6 2

2m3 dz
2m3 dz
1:334
The electron statistics can be written as

n2D
p
zmax
m1 m2 nX
ph2
1:335
nz 1
where
t46 EFs ; nz I1 EFs ; nz ; t47 EFs ; nz
S
X
Lrt46 EFs ; nz
r1
J2D
q
p
nX
zmax

d204 Enz17 Z1
4a0 e m1 m2
I10 E; nz fEdE]]
d0204 Enz17
dz ph3
nz
min
1:336
Enz17
where
h2
h2
d204 E 2a6 2 1
2m3
2m3
s
h2

h2
2 4a6 E:
2m3
2m3
1.2.11 The EP from QWs of HD Gallium Antimonide

The dispersion relation of the conduction electrons in n-GaSb can be written as
[196]
104
0
0
go
go
E
h2 k 2 E
h2 k2 1
1 1
1 0 2

2m0
2
2
Ego mc m0
1:337
where
5:105 T 2
0
go
eV
Ego
E
2112 T
h2 k2
I36 E
2mc
1:338
where
0
0
g0
g0
I36 E E E
mc =m0 E
=2
0
0 2
g0
g0
=22 E
=21 mc =m0
E
0
0
g0
g0
=21 mc =m0 2 E E
1 mc =m0 1=2
E
Under the condition of heavy doping (1.338) assumes the form

h2 k 2
I36 E; gg
2mc
1:339
where,
Eg0
Eg0
Eg0
mc Eg0
mc
mc
: 2 1 2 2 1
m0 2
2
2
m0
2
m0
mc
c3 E; gg Eg0 1 1=2
m0
I36 E; gg c3 E; gg Eg0

0
1:340

NHD E; gg

0
gv 2mc 3=2 q
I36 E; gg I36 E; gg
2
2
2p
h
1:341
Since, the original band model in this case is a no pole function, therefore, the
HD counterpart will be totally real, and the complex band vanishes.
105

n0
s
X
gv 2mc 3=2
3=2
fI
E
;
g
g
LrfI36 EFh ; gg g3=2

36
F
g
h
3p2
h2
r1
1:342

4a0 pegv mc
J
h3
Z1
I36 E0 ; gg fEdE0
1:343
E0

electrons in QWs of HD GaSb can be written following (1.339) as
I36 E; gg
2mc
2mc
1:344
The expression of the N2DT (E) in this case can be written as

N2DT E
nz max
mc gv X
ph2 nz 1 119D
1:345
where,
n
o
h2 nz p=dz 2 2mc 1 I36 Enz D119 ; gg
1:346

0
EF1HD ; gg ; nz
1:347

n2D
nz max
m c gv X
p
h2 nz 1
1:348a
106
where,
s
X
r1
J2D
q
p nzmax I36 En ; g Z1
g
zD119
a0 egv mc X
0
T119D
E; gg ; nz fEdE]] 1:348b
0
3
I36 EnzD119 ; gg
2dz p
h nz
EnzD119
min
The total 2D DOS function in the absence of band tails in this case can be
written as
N2DT E
nmax
mc gv X
fI36 E0 HE Enz44 g

ph2 nz 1
1:349
where, the sub-band energies Enz44 can be expressed as

I36 Enz44
h2
pnz =dz 2
2mc
1:350a

m EFs mc I36 EFs 0
1:350b
The 2D carrier concentration assumes the form

n2D
nmax
m c gv X

ph2 nz 1
1:351
where
s
X
h2
pnz =dz 2 and T56 EFs ; nz
LrT55 EFs ; nz
2mc
r1
J2D
p nzmax p Z1
I36 Enz44
a0 egv mc X
0
I36
E)fEdE]]
0 E
2
I
2dz ph nz
36 nz44
min
Enz44
1:352
107
The expression of electron concentration for bulk specimens of GaSb (in the
absence of band tails) can be expressed as
n0

gv 2mc 3=2
A10 EF
MA10 EF N
3p2 h2
1:353
where,
A10 EF I36 EF 3=2 and N
A10 EF
M
s
X
A10 EF
LrM
r1

a0 e gv
J
4 3p2
r
Z1 p
I36 E0
2 2mc 3=2
0 0
0
2
0 E0 MA100 E fEdE
mc h
I36
E
1:354
Thus, we can summarize the whole mathematical background in the following

way.
In this chapter, we have investigated the 3D and 2D EPs from HD bulk and QWs
of non-linear optical materials on the basis of a newly formulated electron dispersion law considering the anisotropies of the effective electron masses, the spin
orbit splitting constants and the influence of crystal eld splitting within the
framework of k.p formalism. The results for 3D and 2D EPs from HD bulk and
QWs of III-V, ternary and quaternary compounds in accordance with the three and
two band models of Kane form a special case of our generalized analysis. We have
also studied the EP in accordance with the models of Stillman et al. and Palik et al.
respectively since these models nd use to describe the electron energy spectrum of
the aforesaid materials. The 3D and 2D EPs has also been derived for HD bulk and
QWs of II-VI, IV-VI, stressed materials, Te, n-GaP, p-PtSb2, Bi2Te3, n-Ge and
n-GaSb compounds[sub]Band structure by using the models of Hopeld,
Dimmock, Bangert and Kastner, Seiler, Bouat and Thuillier, Rees, Emtage, Kohler,
Cardona, Wang et al. and Mathur et al. respectively and transforming each and on
the basis of the appropriate carrier energy spectra. The well-known expressions of
the EPs in the absence of band tails for wide gap materials have been obtained as
special cases of our generalized analysis under certain limiting conditions. This
indirect test not only exhibits the mathematical compatibility of our formulation but
also shows the fact that our simple analysis is a more generalized one, since one can
obtain the corresponding results for relatively wide gap materials having parabolic
energy bands under certain limiting conditions from our present derivation.
108
1.3 Results and Discussion

Using the appropriate equations and taking the energy band constants as given in
Table 1.1, we have plotted the normalized EP from QWs of HD CdGeAs2 (an
example of nonlinear optical materials) as a function of dz as shown in plot (a) of
Fig. 1.1, in which the plot (b) corresponds to d 0. The plot (c) has been drawn in
accordance with the three band model of Kane and the plot (d) refers to the two
band model of Kane together with the plot (e) exhibiting the variation in accordance
with the parabolic energy bands for the overall assessments of the energy band
constants on the EP in this case. The Fig. 1.2 exhibits the plots of the normalized EP
from QWs of HD CdGeAs2 as a function of the normalized incident photon energy
for all cases Figs. 1.2 and 1.3 shows the dependence of the said variable on the
normalized electron degeneracy for all cases of Fig. 1.2.
The normalized EP from QWs of HD n-InAs (an example of III-V materials) in
accordance with the three and two band models of Kane as functions of lm
thickness, normalized incident photon energy and the normalized electron degeneracy have, respectively, been presented in Figs. 1.4, 1.5 and 1.6. The Figs. 1.7, 1.8
and 1.9 exhibit the variations of normalized EP from QWs of HD n-InSb as
functions of lm thickness, normalized incident photon energy and the normalized
electron degeneracy respectively. The variations of the normalized EP from QWs of
HD CdS (an example of II-VI materials) as functions of thickness, normalized
Fig. 1.1 Plot of the normalized EP from QWs of HD CdGeAs2 as a function of dz in accordance
with a generalized band model, b d 0, c the three-band model of Kane, d the two band model of
Kane, and e the parabolic energy bands
109
Fig. 1.2 Plot of the normalized EP from QWs of HD CdGeAs2 as a function of normalized
incident photon energy for all cases of Fig. 1.1
Fig. 1.3 Plot of the normalized EP from QWs of HD CdGeAs2 as a function of normalized
electron degeneracy for all cases of Fig. 1.1
110
Fig. 1.4 Plot of the normalized EP from QWs of HD n-InAs as a function of dz in accordance with
a the three band model of Kane and b the two band model of Kane
Fig. 1.5 Plot of the normalized EP from QWs of HD n-InAs as a function of normalized incident
photon energy in accordance with a the three band model of Kane and b the two band model of
Kane
111
Fig. 1.6 Plot of the normalized EP from QWs of HD n-InAs as a function of normalized electron
degeneracy in accordance with a the three band model of Kane and b the two band model of Kane
Fig. 1.7 Plot of the normalized EP from QWs of HD n-InSb as a function of dz in accordance with
112
Fig. 1.8 Plot of the normalized EP from QWs of HD n-InSb as a function of normalized incident
Kane
Fig. 1.9 Plot of the normalized EP from QWs of HD n-InSb as a function of normalized electron
113
Fig. 1.10 Plot of the normalized EP from QWs of HD CdS as a function of dz with a
k0 0 and
b k0 0
incident photon energy and normalized electron degeneracy have respectively been
drawn in Figs. 1.10, 1.11 and 1.12, where the plots for k0 0 have further been
drawn for the purpose of assessing the influence of the splitting of the two-spin
states by the spin orbit coupling and the crystalline eld. The thickness, normalized
photon energy and the normalized electron degeneracy dependences of normalized
EP from QWs of HD GaP have been shown in Figs. 1.13, 1.14 and 1.15 respectively. The dependence of normalized EP with reference to the aforementioned
variables from QWs of HD n-Ge and PtSb2, has been shown in Figs. 1.16, 1.17,
1.18, 1.19, 1.20 and 1.21 in accordance with the models of Cardona et al.,Wang and
Ressler and Emtage respectively. Figures 1.22, 1.23 and 1.24 manifest the variations of the normalized EP from QWs of HD stressed n-InSb as functions of the
lm thickness, normalized incident photon energy and the normalized electron
degeneracy respectively. The Figs. 1.25, 1.26, 1.27 exhibit the normalized EP from
QWs of HD IV-VI materials as functions of lm thickness, normalized incident
photon energy and normalized electron degeneracy.
The influence of quantum connement is immediately apparent from Figs. 1.1,
1.4, 1.7, 1.10, 1.13, 1.16, 1.19, 1.22 and 1.25 since the EP depends strongly on the
thickness of the quantum-conned materials in contrast with the corresponding bulk
specimens. The EP decreases with increasing lm thickness in an oscillatory way
with different numerical magnitudes for QWs of HD materials. It appears from the
aforementioned gures that the EP exhibits spikes for particular values of lm
114
Fig. 1.11 Plot of the normalized EP from QWs of HD CdS as a function of normalized incident
photon energy with a
k0 0 and b
k0 0
Fig. 1.12 Plot of the normalized EP from QWs of HD CdS as a function of normalized electron
0 0
degeneracy with a k0 0 and b k
115
Fig. 1.13 Plot of the normalized EP from QWs of HD n-GaP as a function of dz
Fig. 1.14 Plot of the normalized EP from QWs of HD n-GaP as a function of normalized incident
photon energy
116
Fig. 1.15 Plot of the normalized EP from QWs of HD n-GaP as a function of normalized electron
degeneracy
Fig. 1.16 Plot of the normalized EP from QWs of HD n-Ge as a function of thickness in
accordance with a Cardona et al. and b Wang et al.
117
Fig. 1.17 Plot of the normalized EP from QWs of HD n-Ge as a function of normalized incident
photon energy for both the cases of Fig. 1.16
Fig. 1.18 Plot of the normalized EP from QWs of HD n-Ge as a function of normalized electron
degeneracy for both the cases of Fig. 1.16
118
Fig. 1.19 Plot of the normalized EP from QWs of HD n-PtSb2 as a function of thickness
Fig. 1.20 Plot of the normalized EP from QWs of HD n-PtSb2 as a function of normalized
incident photon energy
119
Fig. 1.21 Plot of the normalized EP from QWs of HD n-PtSb2 as a function of normalized
electron degeneracy
Fig. 1.22 Plot of the normalized EP from QWs of HD stressed n-InSb as a function of lm
thickness
120
Fig. 1.23 Plot of the normalized EP from QWs of HD stressed n-InSb as a function of normalized
Fig. 1.24 Plot of the normalized EP from QWs of HD stressed n-InSb as a function normalized
electron degeneracy
121
Fig. 1.25 Plot of the normalized EP from QWs of HD PbTe as a function of lm thickness in
accordance with the models of a the Dimmok and b the Bangert and Kastner respectively. The
plots c and d exhibit the same for PbSe
Fig. 1.26 Plot of the normalized EP from QWs of HD PbTe as a function of incident photon
energy in accordance with the models of a the Dimmok and b the Bangert and Kastner
respectively. The plots c and d exhibit the same for PbSe
122
Fig. 1.27 Plot of the normalized EP from QWs of HD PbTe as a function of electron degeneracy
in accordance with the models of a the Dimmok and b the Bangert and Kastner respectively. The
thickness which, in turn, depends on the particular band structure of the specic
material. Moreover, the photoemission from QWs of HD compounds can become
several orders of magnitude larger than of bulk specimens of the same materials,
which is also a direct signature of quantum connement. This oscillatory dependence will be less and less prominent with increasing lm thickness. It appears from
Figs. 1.3, 1.6, 1.9, 1.12, 1.15, 1.18, 1.21, 1.24 and 1.27 that the EP increases with
increasing carrier degeneracy and also exhibits spikes for all types of quantum
connement as considered in this chapter. For bulk specimens of the same material,
the EP will be found to increase continuously with increasing electron degeneracy
in a non-oscillatory manner. The Figs. 1.2, 1.5, 1.8, 1.11, 1.14, 1.17, 1.20, 1.23 and
1.26 illustrate the dependence of the EP from quantum-conned HD materials on
the normalized incident photon energy.
The EP increases with increasing photon energy in a step like manner for all the
gures. The appearance of the discrete jumps in all the gures is due to the
redistribution of the electrons among the quantized energy levels when the size
quantum number corresponding to the highest occupied level changes from one
xed value to the others. With varying electron degeneracy, a change is reflected in
the EP through the redistribution of the electrons among the size-quantized levels. It
may be noted that at the transition zone from one sub band to another, the height of
the peaks between any two sub-bands decreases with the increasing in the degree of
quantum connement and is clearly shown in all the curves. It should be noted that
123
although, the EP varies in various manners with all the variables as evident from all
the gures, the rates of variations are totally band-structure dependent. The influence of the energy band models on the EP from various types of HD quantumconned materials can also be assessed from the plots. With different sets of energy
band parameters, different numerical values of the EP will be obtained though the
nature of variations of the same as shown here would be similar for the other types
of materials and the simplied analysis of this chapter exhibits the basic qualitative
features of the EP phenomena from such compounds. Another important point in
this context is the existence of the effective mass within the forbidden zone, which
is impossible without the formation of band tails.
It is an amazing fact that the study of the carrier transport in HD quantized
materials through proper formulation of the Boltzmann transport equation which
needs in turn, the corresponding HD carrier energy spectra is still one of the open
research problems.
It may be noted that with the advent of MBE and other experimental techniques,
it is possible to fabricate quantum-conned structures with an almost defect-free
surface. The numerical computations have been performed using the fact that the
probability of photon absorption in direct band-gap compounds is close to unity. If
the direction normal to the lm was taken differently from that as assumed in this
work, the expressions for the EP from QWs of HD materials would be different
analytically, since the basic dispersion relations for many materials are anisotropic.
In formulating the generalized electron energy spectrum for non-linear optical
materials, we have considered the crystal-eld splitting parameter, the anisotropies
in the momentum-matrix elements, and the spin-orbit splitting parameters,
respectively. In the absence of the crystal eld splitting parameter together with the
assumptions of isotropic effective electron mass and isotropic spin orbit splitting,
our basic relation as given by (1.2) converts into the well-known three-band Kane
model and is valid for III-V compounds, in general. It should be used as such for
studying the electronic properties of n-InAs where the spin-orbit splitting parameter
() is of the order of band gap (Eg). For many important materials D Eg and
under this inequality, the three band model of Kane assumes the form E1
EEg1
h2 k 2 =2mc which is the well-known two-band Kane model. Also under the
condition, Eg ! 1, the above equation gets simplied to the well-known form of
parabolic energy bands as E h2 k2 =2mc . It is important to note that under certain
limiting conditions, all the results for all the models as derived here have transformed into the well-known expression of the 2D EP for size quantized materials
having parabolic bands. We have not considered other types of compounds or
external physical variables for numerical computations in order to keep the presentation brief. With different sets of energy band constants, we shall get different
numerical values of the 2D EP though the nature of variations of the 2D EP as
shown here would be similar for the other types of materials and the simplied
analysis of this chapter exhibits the basic qualitative features of the 2D EP for such
compounds.
124
Our method is not at all related to the DOS technique as used in the literature.
From the E-k dispersion relation, we can obtain the DOS, but the DOS technique as
used in the literature cannot provide the E-k dispersion relation. Therefore, our
study is more fundamental than those of the existing literature because the Boltzmann transport equation, which controls the study of the charge transport properties
of semiconductor devices, can be solved if and only if the E-k dispersion relation is
known. We wish to note that we have not considered the many body effects in this
simplied theoretical formalism due to the lack of availability in the literature of
proper analytical techniques for including them for the generalized systems as
considered in this chapter. Our simplied approach will be useful for the purpose of
comparison when methods of tackling the formidable problem after inclusion of the
many body effects for the present generalized systems appear. It is worth remarking
in this context that from our simple theory under certain limiting conditions we get
the well-known result of the EP from wide gap materials having parabolic energy
bands. The inclusion of the said effects would certainly increase the accuracy of the
results, although the qualitative features of the 2D EP in QWs of HD materials
discussed in this chapter would not change in the presence of the aforementioned
effects. The influence of energy band models and the various band constants on the
EP for different materials can also be studied from all the Figures of this chapter.
One important concept of this chapter is the presence of poles in the nite complex
plane in the dispersion relation of the materials in the absence of band tails creates
the complex energy spectrum in the corresponding HD samples. Besides, from the
DOS function in this case, it appears that a new forbidden zone has been created in
addition to the normal band gap of the semiconductor. If the basic dispersion
relation in the absence of band tails contains no poles in the nite complex plane,
the corresponding HD energy band spectrum will be real, although it may be the
complicated functions of exponential and error functions and deviate considerably
from that in the absence of band tailing.
The numerical results presented in this chapter would be different for other
materials but the nature of variation would be unaltered. The theoretical results as
given here would be useful in analyzing various other experimental data related to
this phenomenon. We must note that the study of transport phenomena and the
formulation of the electronic properties of HD nano-compounds are based on the
dispersion relations in such materials. It is worth remarking that this simplied
formulation exhibits the basic qualitative features of 2D EP from 2D materials. The
basic objective of this chapter is not solely to demonstrate the influence of quantum
connement on the 2D EP from QWs of HD non-parabolic materials but also to
formulate the appropriate electron statistics in the most generalized form, since the
transport and other phenomena in HD 2D materials having different band structures
and the derivation of the expressions of many important electronic properties are
based on the temperature-dependent electron statistics in such compounds. Finally,
we can write that the analysis as presented in this chapter can be used to investigate
the Burstein Moss shift, the carrier contribution to the elastic constants, the specic
heat, activity coefcient, reflection coefcient, Hall coefcient, plasma frequency,
various scattering mechanisms and other different transport coefcients of modern
125
HD non-parabolic quantum conned HD devices operated under different external

conditions having varying band structures.
1.4 Open Research Problems

The problems under these sections of this monograph are by far the most important
part for the readers and few open research problems are presented from this
chapter till end. The numerical values of the energy band constants for various
semiconductors are given in Table 1.1 for the related computer simulations.
(R.1.1)
Investigate the EP for the HD bulk semiconductors whose respective
dispersion relations of the carriers in the absence of band tails and any
externally applied eld are given below:
(a) The electron dispersion law in n-GaP can be written as [197]
" 2
#1=2

2 ks2
h
h2 ks2 D
D
2
2 2
E

P1 kz D1 kx ky
2
2mk 2m? 2
(b)
R:1:1
335 meV, P1 = 2 1010eVm, D1 = P1a1 and

where, D
a1 = 5.4 1010m.
The dispersion relation for the conduction electrons for IV-VI
semiconductors can also be described by the models of Cohen
[198], McClure and Choi [199], Bangert et al. [200] and Foley
et al. [201] respectively.
(i) In accordance with Cohen [198], the dispersion law of the
carriers is given by
aEp2y
p2
p2
E1 aE x z
2m1 2m3
2m02
ap4y
4m2 m02
p2y
1 aE
2m2
R:1:2
(ii)
where m1, m2 and m3 are the effective carrier masses at the

band-edge along x, y and z directions respectively and m02 is
the effective- mass tensor component at the top of the
valence band (for electrons) or at the bottom of the conduction band (for holes).
The carrier energy spectra can be written, following
McClure and Choi [199] as
126
E1 aE
p2y
p2y
p2
p2x
z
aE
2m1 2m2 2m3 2m2
(iii)

m2
1
m02
p4y a
ap2x p2y
ap2y p2z

4m2 m02 4m1 m2 4m2 m3
R:1:3
The carrier energy spectrum of IV-VI semiconductors in

accordance with Foley et al. [201] can be written as
Eg
E k
E
2
"
#1=2

Eg 2 2 2
2 2
E k
P? ks Pk kz
2
h2 k 2
h2 k 2
where, E k 2ms 2mz ;
h2 k2
h2 k 2
R:1:4
E k 2ms 2mz represents the
contribution from the interaction of the conduction and the

valance band edge states
and the free
h with ithe more hdistant bands
i
electron term,
1
m
?
12
1
mtc
m1tv ; m1 12
k
1
m1c
m11v ;
For n-PbTe
m0
P? 4:61 1010 eVm; Pk 4:61 1010 eVm;
mtv
m0
m0
m0
10:36;
0:75;
11:36;
1:20 and gv 4
mtv
mtc
m1c
(c)
The hole energy spectrum of p-type zero-gap semiconductors (e.g.

HgTe) is given by Ivanov-Omskii et al. [202]
E

k
h2 k2
3e2
2EB
k

ln

k0
2mv 128e1
p
R:1:5
where mv is the effective mass of the hole at the top of the valence
2
2
band, EB 2mh20 ee2 and k0 hm20ee2 .
1
(d)
The conduction electrons of n-GaSb obey the following two dispersion relations:
(i) In accordance with the model of Seiler et al. [203]
1
0 f2 k
Eg Eg
h2 k 2 v0 f1 k
h2 x
h2
E 1 a4 k 2 1=2 0

2
2
2m0
2m0
2m0
R:1:6
i1

h
where a4 4P2 Eg 23D Eg2 Eg D , P is the isotropic
h
momentum matrix element, f1 k k2 kx2 ky2 ky2 kz2 kz2 kx2
127
represents the warping of the Fermi surface, f2 k

n
o1=2
k2 kx2 ky2 ky2 kz2 kz2 kx2 9kx2 ky2 kz2
k 1
represents
(ii)
the inversion asymmetry splitting of the conduction ban 0 represent the constants of the electron
dand 10 ; v0 and x
spectrum in this case.
In accordance with the model of Zhang et al. [204]
h
i
h
i
1
2
1
2
E E2 E2 K4;1 k2 E4 E4 K4;1 k4
h
i
1
2
3
k6 E6 E6 K4;1 E6 K6;1
R:1:7
where
K4;1
K6;1
"
#
5 p kx4 ky4 kz4 3
21

;
4
5
k4
s
2 2 2

639; 639 kx ky kz
1 kx4 ky4 kz4 3
1

;

32
22
5
105
k6
k4
a
times
the coefcients are in eV, the values of k are 10 2p
those of k in atomic units (a is the lattice constant),
1
2
1
E2 1:0239620,
E2 0,
E4 1:1320772,
2
E4 0:05658, E6 1:1072073, E6 0:1134024 and

3
(e)
E6 0:0072275.
In addition to the well-known band models of III-V semiconductors as discussed in this monograph, the conduction electrons
of such compounds obey the following three dispersion relations:
(i) In accordance with the model of Rossler [205]
h
i
2 k 2
h
k2 k2 k2 k2 k2 k2

a10 k 4 b
10 x y
y z
z x

2m
h
i1=2
c10 k 2 kx2 ky2 ky2 kz2 kz2 kx2 9kx2 ky2 kz2
(ii)
R:1:8
b
b
k
a10 a11 a12 k,
where,
b
and
10
11
12
c10 c11 c12 k, in which, a11 2; 132 1040 eVm4 ,
2; 493 1040 eVm4 ,
a12 9; 030 1050 eVm5 , b
11
12; 594 1050 eVm5 , c 30 1030 eVm3 and
b
12
11
c12 154 1042 eVm4 .
In accordance with Johnson and Dickey [206], the electron
energy spectrum assumes the form
128
E

1=2
Eg h2 k 2 1
1
Eg
h2 k 2 f1 E
14 0
2
2 m0 mcb
2
2mc Eg

Eg 2D3
Eg DEEg 2D
where,
P E E D , f1 E E 2D EE D3 , m0c
g 3 g
g g
h
i1
0:139m0 and mcb m10 m20 .
m0
m0c
(iii)
In accordance with Agafonov et al. [207], the electron

energy spectrum can be written as
9"
8
2
#3
p
= kx4 ky4 kz

g Eg 4
h2 k 2 <D 3 3B

5

1
E
;
2
2
gmc : 2 h2
k4
R:1:9
2mc
1=2
g Eg2 83 P2 k2
,
2
h
D 40 2m
.
0
where,
(f)
and
The dispersion relation of the carriers in n-type Pb1x-GaxTe with

x = 0.01 can be written following Vassilev [208] as

(g)
21 h
B
2m0

g 0:411ks2 0:0377kz2
E 0:606ks2 0:0722kz2 E E

g 0:061ks2 0:0066kz2 ks
0:23ks2 0:02kz2 0:06E
R:1:10
g 0:21 eV is the energy gap for the transition point,

where, E
the zero of the energy E is at the edge of the conduction band of
the C point of the Brillouin zone and is measured positively
upwards, kx, ky and kz are in the units of 109m1.
The energy spectrum of the carriers in the two higher valance
bands and the single lower valance band of Te can, respectively,
be expressed as [209]
A10 kz2 B10 ks2
E
h
i1=2
Dk A10 kz2 B10 ks2 b10 kz
D210 b10 kz 2
and E
R:1:11
(h)
is the energy of the hole as measured from the top of the

where, E
valance and within it, A10 3:77 1019 eVm2 , B10 3:57
1019 eVm2 , D10 0:628 eV, b10 2 6 1020 eVm2 and Dk
1; 004 105 eV are the spectrum constants.
The dispersion relation of the holes in p-InSb can be written in
accordance with Cunningham [210] as
129
h p pp i
c4 1 c4 f4 k2 1 2 2p
E
c4 16 5c4 E4 g4 k R:1:12
3
h
h
where, c4 2m
h4 , h4 4:7 2m
, c4 bc44 , b4 32 b5 2h4 ,
0
0

2
h
b5 2:4 2m
, f4 14 sin2 2h sin4 h sin2 2/ , h is measured from
0
2
(i)
the positive z-axis, / is measured from positive x-axis, g4

sin h cos2 h 14 sin4 h sin2 2/ and E4 5 104 eV.
The energy spectrum of the valance bands of CuCl in accordance
with Yekimov et al. [211] can be written as
Eh c6 2c7
h2 k 2
2m0
R:1:13
and
"
2 2 2 #1=2
h2 k2 D1
D21
h2 k 2
c h k

c7 D1
El;s c6 c7

9 7
2m0
2
4
2m0
2m0
R:1:14
where,
c6 0:53; c7 0:07; D1 70 meV:
(j)
In the presence of stress, v6 along h000i and h111i directions, the

energy spectra of the holes in semiconductors having diamond
structure valance bands can be respectively expressed following
Roman et al. [212] as
2 4

7 k d26 B7 d6 2kz2 ks2 1=2
E A6 k 2 B
R:1:15
and

D6 2
27 k4 d27 p
d7 2kz ks2
E A6 k B
3
1=2
R:1:16
where, A6, B7, D6 and C6 are inverse mass band parameters in

which d6 l7 S11 S12 v6 , Sij are the usual elastic compliance

2
27 B27 c6 and d7 d8pS44 v6 . For gray tin,
constants, B
5
d8 4:1 eV, l7 2:3 eV, A6

h
h
and c26 1112 2m
.
31 2m
0
0
2
2 3
h2
19:2 2m0 , B7
h
26:3 2m
, D6
0
2
130
(k)
The dispersion relation of the carriers of cadmium and zinc diphosphides are given by [213]

b b k 2
k
E b1 2 3
8b4

1=2

b b k 2
b2 k
b2 k 2
b2 1 3
k
k 8b24 1 3
b4 b3 kx b5 2 3
8b4
4
4
R:1:17
where b1 ; b2 ; b4 and b5 are system constants and b3 k
kx2 ky2 2kz2
k2
(R.1.2)
(R.1.3)
(R.1.4)
(R.1.5)
(R.1.6)
(R.1.7)
(R.1.8)
(R.1.9)
(R.1.10)
(R.1.11)
(R.1.12)
:
Investigate the EP for bulk specimens of the HD semiconductors in the
presences of Gaussian, exponential, Kane, Halperian, Lax and BonchBurevich types of band tails [38, 39] for all systems whose unperturbed
carrier energy spectra are dened in R.1.1.
Investigate the EP for QWs of all the HD semiconductors as considered
in R.1.2.
Investigate the EP for HD bulk specimens of the negative refractive
index, organic, magnetic and other advanced optical materials in the
presence of an arbitrarily oriented alternating electric eld.
Investigate the EP for the QWs of HD negative refractive index, organic,
magnetic and other advanced optical materials in the presence of an
arbitrarily oriented alternating electric eld.
Investigate the EP for the multiple QWs of HD materials whose
unperturbed carrier energy spectra are dened in R.1.1.
Investigate the EP for all the appropriate HD low dimensional systems
of this chapter in the presence of nite potential wells.
Investigate the EP for all the appropriate HD low dimensional systems
of this chapter in the presence of parabolic potential wells.
Investigate the EP for all the appropriate HD systems of this chapter
forming quantum rings.
Investigate the EP for all the above appropriate problems in the presence
of elliptical Hill and quantum square rings.
Investigate the EP for parabolic cylindrical HD low dimensional
systems in the presence of an arbitrarily oriented alternating electric eld
for all the HD materials whose unperturbed carrier energy spectra are
dened in R.1.1.
Investigate the EP for HD low dimensional systems of the negative
refractive index and other advanced optical materials in the presence of
an arbitrarily oriented alternating electric eld and non-uniform light
waves.
(R.1.13)
(R.1.14)
(R.1.15)
(R.1.16)
(R.1.17)
(R.1.18)
(R.1.19)
131
Investigate the EP for triangular HD low dimensional systems of the

negative refractive index, organic, magnetic and other advanced optical
materials in the presence of an arbitrarily oriented alternating electric
eld in the presence of strain.
Investigate the EP in HD quantum wires of non-parabolic semiconductors as discussed in this chapter.
Investigate the EP for all the problems of (R.1.13) in the presence of
arbitrarily oriented magnetic eld.
alternating electric eld.
alternating magnetic eldAlternating magnetic eld.
crossed electric eld and quantizing magnetic elds.
crossed alternating electric eld and alternating quantizing magnetic
elds.
(R.1.20)
(a) Investigate the EP for HD low dimensional systems of the negative

refractive index, organic, magnetic and other advanced optical
materials in the presence of an arbitrarily oriented alternating
electric eld considering many body effects
(b) Investigate all the appropriate problems of this chapter for a Dirac
electron.
(R.1.21)
Investigate all the appropriate problems of this chapter by including the

many body, image force, broadening and hot carrier effects respectively.
Investigate all the appropriate problems of this chapter by removing all
the mathematical approximations and establishing the respective
appropriate uniqueness conditions.
(R.1.22)
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Chapter 2
The EP from Nano Wires (NWs)

of Heavily Doped (HD) Non-parabolic
Semiconductors
2.1 Introduction
It is well-known that in nano wires (NWs), the restriction of the motion of the carriers
along two directions may be viewed as carrier connement by two innitely deep 1D
rectangular potential wells, along any two orthogonal directions leading to quantization of the wave vectors along the said directions, allowing 1D carrier transport
[14]. With the help of modern fabricational techniques, such one dimensional
quantized structures have been experimentally realized and enjoy an enormous range
of important applications in the realm of nanoscience in the quantum regime. They
have generated much interest in the analysis of nanostructured devices for investigating their electronic, optical and allied properties [58]. Examples of such new
applications are based on the different transport properties of ballistic charge carriers
which include quantum resistors [914], resonant tunneling diodes and band lters
[15, 16], quantum switches [17], quantum sensors [1820], quantum logic gates [21,
22], quantum transistors and sub tuners [2325], heterojunction FETs [26, 27], highspeed digital networks [2831], high-frequency microwave circuits [32], optical
modulators [33], optical switching systems [3436], and other devices.
In this chapter in Sects. 2.2.1, 2.2.2, 2.2.3, 2.2.4, 2.2.5, 2.2.6, 2.2.7, 2.2.8, 2.2.9,
2.2.10 and 2.2.11 we have investigated the EP from NWs of HD non-linear optical,
III-V, II-VI, stressed Kane type, Te, GaP, PtSb2, Bi2Te3, Ge and GaAs respectively.
The Sect. 2.3 contains the result and discussions pertaining to this chapter. The
Sect. 2.4 presents 24 open research problems.

DOI 10.1007/978-3-319-11188-9_2
139
2 The EP from Nano Wires (NWs)
140

2.2.1 The EP from Nano Wires of HD Nonlinear Optical
Semiconductors
The dispersion relation of the 1D electrons in this case can be written following
(1.32) as
h2 nz p=dz 2
h2 ny p=dy 2
h2 kx2
1
2mk T21 E; gg 2mk T22 E; gg 2mk T21 E; gg
2:1
where, nz 1; 2; 3; . . ., dz are the size quantum number and the nano-thickness

along the z-direction respectively, ny 1; 2; 3; . . . and dy are the size quantum
number and the nano-thickness along the y-direction respectively.
The 1D DOS function per sub-band is given by
N1D E
2gv okx
p oE
2:2
The velocity of the emitted electrons along the x-direction can be written as
vx E
1 oE
h okx
2:3
Therefore the photocurrent is given by

ymax X
zmax
ao egv X
I
2 n 1 n 1
Z1
D1
2 okx
p oE

1 oE
f E dE
h okx
2:4
where,
D1 E 0 W hm:
2:5
Using (2.4), one can write,

ymax X
zmax
X
ao egv kB T
Real part of
F0 g61HD ;
ph
n 1 n 1
2:6
where
g61HD
0

EF1HDNW E1HDNW
W hm

kB T
0
is the complex sub-band energy
EF1HDNW in the Fermi energy in this case, E1HDNW
which can be expressed in this case as
141
h2 nz p=dz 2
h2 ny p=dy 2
1
2mk T21 E01HDNW ; gg 2mk T22 E01HDNW ; gg
2:7
The EEM in this case in given by

m EF1HDNW ; ny ; nz ; gg
h2
o
Real part of
T1HDNW E; ny ; nz ; gg 2
oEF1HDNW
2
2:8
where
T1HDNW E; ny ; nz ; gg 1
h2 nz p=dz 2
h2 ny p=dy 2 2mk T21 E; gg 1=2

2mk T21 E; gg 2mk T22 E; gg
h2
2:9
Thus, we observe that the EEM is the function of size quantum numbers in both
the directions and the Fermi energy due to the combined influence of the crystal
led splitting constant and the anisotropic spin-orbit splitting constants respectively. Besides it is a function of g due to which the EEM exists in the band gap,
which is otherwise impossible.
Thus, it appears that the evaluation of J1D requires an expression of carrier
statistics which can, in turn, be written as

n1D

nX
ymax n
zmax
X

2gv
Real part of
T1HDNW EF1HDNW ; ny ; nz ; gg
p

ny 1 nz 1
2:10
P
where T2HDNW EF1HDNW ; ny ; nz ; gg sr1 LrT1HDNW EF1HDNW ; ny ; nz ; gg ;
In the absence of band-tails, for electron motion along x-direction only, the 1D
electron dispersion law in this case can be written following (1.2) as

2
cE f1 Ekx2 f1 E pny dy f2 Epnz =dz 2
2:11
The sub-band energy E10 are given by the equation

2
cE10 f1 E10 pny dy f2 E10 pnz =dz 2
nymax nX
zmax
ao egv kB T X
I
F0 g62
ph
n 1 n 1
y
2:12
142
where

EF1d E10 W hm

;
kB T

g62
2:13
and EF1d is the Fermi energy in this case

The electron concentration per unit length can be written as
n1D
nX
nzmax

2gv ymax X
t1 EF1d ; ny ; nz t2 EF1d ; ny ; nz
p n 1 n 1
y
2:14
where
i1=2

h

2
t1 EF1d ; ny ; nz cEF1d f1 EF1d pny dy f2 EF1d pnz =dz 2
f1 EF1d 1=2
and
s

X

Lr t1 EF1d ; ny ; nz :
t2 EF1d ; ny ; nz
r1
2.2.2 The EP from Nano Wires of HD III-V Semiconductors

(i) Three band model of Kane
(1.55) as
2 nz p=dz 2 h2 ny p=dy 2 h2 kx2
h
2mc
2mc
2mc
2:15

I
nX
ymax n
zmax
X
ao egv kB T
Real part of
F0 g63HD ;
ph
n 1 n 1
y
where
0

EF1HDNW E2HDNW
W hm

;
kB T

g63HD
0
is the sub-band energy in this case which can be expressed as
and E2HDNW
2:16
143
2 nz p=dz 2 h2 ny p=dy 2

h
0
0
T31 E2HDNW
; gg iT31 E2HDNW
; gg
2mc
2mc
2:17

0
m EF1HDNW ; gg mc T31
EF1HDNW ; gg
2:18

nX
nzmax

2gv ymax X
n1D
T3HDNW EF1HDNW ; ny ; nz ; gg T4HDNW EF1HDNW ; ny ; nz ; gg
p ny 1 nz 1
2:19
where
"
T3HDNW EF1HDNW ; ny ; nz ; gg T31 EF1HDNW ; gg iT31 EF1HDNW ; gg

h2 nz p=dz 2 h2 ny p=dy 2 2mc

2

2mc
2mc
h
#1=2
P
where T4HDNW EF1HDNW ; ny ; nz ; gg sr1 LrT3HDNW EF1HDNW ; ny ; nz ; gg
The one dimensional electron dispersion law is given by

h2 kx2
G2 ny ; nz I11 E
2:20
2mc
where,
i

h
2
G2 ny ; nz h2 p2 =2mc ny =dy nz =dz 2
The sub band energy E20 can be written as

G2 ny ; nz I11 E20
2:21

I
nymax nX
zmax
ao egv kB T X
F0 g64
ph
n 1 n 1
y
where

EF1d E20 W hm

;
kB T

g64
2:22
144
The electron statistics in this case can be written as

p nymax nX
zmax

2gv 2mc X
n1D
ph
n 1 n 1
y
where
2:23

1=2
t3 EF1d ; ny ; nz I11 EF1d G2 ny ; nz
;
S0

X

t4 EF1d ; ny ; nz
r1
(ii) Two band model of Kane

The dispersion relation of the 1D electrons in this case can be written as
h2 nz p=dz 2 h2 ny p=dy 2 h2 kx2
c2 E; gg
2mc
2mc
2mc
2:24

ymax X
zmax
ao egv kB T X
F0 g64HD ;
ph
n 1 n 1
where
g64HD
2:25
0

EF1HDNW E3HDNW
W hm
kB T
0
and E3HDNW
h2 nz p=dz 2 h2 ny p=dy 2

0
c2 E3HDNW
; gg
2mc
2mc
2:26

m EF1HDNW ; gg mc c02 EF1HDNW ; gg
2:27a


n1D
nymax nX
zmax

2gv X
p ny 1 nz 1
2:27b
145
where
""
c2 EF1HDNW ; gg
h2 nz p=dz 2
2mc
#
#1=2
h2 ny p=dy 2 2mc

2mc
h2
and
Xs
r1
LrT7HDNW EF1HDNW ; ny ; nz ; gg :
The expression of 1D dispersion relation, for NWs of III-V materials whose energy
band structures are dened by the two-band model of Kane in the absence of band
tailing assumes the form
E1 aE

h2 kx2
G 2 ny ; nz
2mc
2:28
In this case, the quantized energy E30 is given by

E30
1
2a

q

1 1 4aG2 ny ; nz
2:29

I
nymax nX
zmax
ao egv kB T X
F0 g65 ;
ph
n 1 n 1
y
where
2:30

EF1d E30 W hm

;
kB T

g65
The carrier statistics in the case can be expressed as

n1D
2gv
p nymax nzmax

2mc X X
h n 1 n 1
y
where

1=2
t5 EF1d ; ny ; nz EF1d 1 aEF1d G2 ny ; nz
;
s

X

t6 EF1d ; ny ; nz
r1
2:31
146
(iii) Parabolic energy bands

c3 E; gg
2mc
2mc
2mc
2:32

ymax X
zmax
ao egv kB T X
I
F0 g66HD ;
ph
n 1 n 1
where
g66HD
2:33
0

EF1HDNW E5HDNW
W hm

kB T
0
and E5HDNW

0
c3 E5HDNW
; gg
2mc
2mc
2:34

m EF1HDNW ; gg mc c03 EF1HDNW ; gg
2:35a

n1D
nX
nzmax

2gv ymax X

p ny 1 nz 1
2:35b
where
T9HDNW EF1HDNW ; ny ; nz ; gg c3 EF1HDNW ; gg

where T10HDNW EF1HDNW ; ny ; nz ; gg
h2 nz p=dz 2
2mc
h2 ny p=dy 2 2mc 1=2

2
2mc
h
Ps
r1
LrT9HDNW EF1HDNW ; ny ; nz ; gg ;
The expression of 1D dispersion relation, for NWs of III-V materials whose

energy band structures are dened by the two-band model of Kane in the absence of
band tailing assumes the form
147

2 kx2
h
G2 ny ; nz
2mc
2:36

E70 G2 ny ; nz
2:37

ymax X
zmax
ao egv kB T X
F0 g67 ;
p
h
ny 1 nz 1
where
2:38

EF1d E70 W hm

kB T

g67

n1D
p nymax nX
zmax
2gv 2mc pkB T X
F12
g67 ;
h
ny 1 nz 1
2:39
where

g67 EF1d E70 kB T 1
Converting the summation over quantum numbers to the corresponding integrations in (2.38), the photocurrent density from semiconductors having isotropic
parabolic energy bands with non-degenerate electron concentration gets transformed into the well known form as given in the preface. Besides, (2.39) is wellknown in the literature.
(iv) The Model of Stillman et al.
2 nz p=dz 2
h
h2 ny p=dy 2
h2 kx2
h4 E; gg
2mc
2mc
2mc
2:40
where
h4 E; gg I12 E; gg
I
where
nymax nX
zmax
ao egv kB T X
F0 g69HD ;
p
h
ny 1 nz 1
2:41
148
g69HD
0

EF1HDNW E9HDNW
W hm

kB T
0
and E9HDNW

0
h4 E9HDNW
; gg
2mc
2mc
2:42

m EF1HDNW ; gg mc h04 EF1HDNW ; gg
2:43a

nX
nzmax

2gv ymax X
n1D
p n 1 n 1
y
z
2:43b
where
""
h4 EF1HDNW ; gg
h2 nz p=dz 2
2mc
#
#1=2
h2 ny p=dy 2 2mc

2mc
h2
P
energy band structures are dened by the model of Stillman et al. in the absence of
I12 E

h2 kx2
G 2 ny ; nz
2mc
2:44

I12 E90 G2 ny ; nz
nymax nX
zmax
ao egv kB T X
I
F0 g69 ;
ph
n 1 n 1
y
2:45
149
where

EF1d E90 W hm

kB T

g69
2:46

n1D
2gv
p nymax nzmax

2mc X X
P9 EF1d ; ny ; nz Q9 EF1d ; ny ; nz
h n 1 n 1
y
2:47
where

1=2
P9 EF1d ; ny ; nz I12 EF1d G2 ny ; nz
s

X

and Q9 EF1d ; ny ; nz
Lr P9 EF1d ; ny ; nz :
r1
(v) The Model of Palik et al.

h5 E; gg
2mc
2mc
2mc
2:48
where
h5 E; gg I13 E; gg
ymax X
zmax
ao egv kB T X
I
F0 g610HD ;
ph
n 1 n 1
2:49
where
0

EF1HDNW E10HDNW
W hm

;
kB T

g610HD
0
and E10HDNW

0
h5 E10HDNW
; gg
2mc
2mc
2:50
150

m EF1HDNW ; gg mc h05 EF1HDNW ; gg
2:51a

n1D
nX
nzmax

2gv ymax X
p ny 1 nz 1
2:51b
where
""
h5 EF1HDNW ; gg
h2 nz p=dz 2
2mc
#
#1=2
h2 ny p=dy 2 2mc

2mc
h2
P
energy band structures are dened by the model of Palik et al. in the absence of
I13 E

h2 kx2
G 2 ny ; nz
2mc
2:52
0
In this case, the quantized energy E10
is given by

0
I13 E10
G2 ny ; nz
2:53

nymax nX
zmax
ao egv kB T X
I
F0 g610 ;
ph
n 1 n 1
y
where
0

EF1d E10
W hm

;
kB T

g610
2:54
151

n1D
where
2gv
p nymax nzmax

2mc X X
P11 EF1d ; ny ; nz Q12 EF1d ; ny ; nz
h n 1 n 1
y
2:55

1=2
P11 EF1d ; ny ; nz I13 EF1d G2 ny ; nz
s

X

and Q12 EF1d ; ny ; nz
Lr P11 EF1d ; ny ; nz :
r1
2.2.3 The EP from Nano Wires of HD II-VI Semiconductors

The 1D electron dispersion law in NW of HD II-VI semiconductors can be written
following (1.141) as
c3 E; gg a00
h2 kz2
nx p 2
ny p
nx p
ny p
2 k0 2 2 1=2
dx
dy
dx
dy
2mk
2:56

ymax X
zmax
ao egv kB T X
F0 g613HD ;
2ph n 1 n 1
2:57
where

g613HD
0

EF1HDNW E13HDNW
W hm
kB T
0
and E13HDNW
0
; gg a00
c3 E13HDNW
nx p 2
ny p
nx p
ny p
2 k0 2 2 1=2
dx
dy
dx
dy
2:58

m EF1HDNW ; gg mk c03 EF1HDNW ; gg
2:59

152
n1D
ymax
xmax n
g nX
X

v
T17HDNW EF1HDNW ; nx ; ny ; gg T18HDNW EF1HDNW ; nx ; ny ; gg
nx 1 ny 1
2:60
where
nx p 2
ny p
2
dx
dy
2mk 1=2
n
p
n
p
x
y
2
2
1=2
k0 2
dx
dy
h
T17HDNW EF1HDNW ; nx ; ny ; gg c3 EF1HDNW ; gg a00
and
T18HDNW EF1HDNW ; nx ; ny ; gg
s
X
LrT17HDNW EF1HDNW ; nx ; ny ; gg ;
r1
The 1D dispersion relation for NWs of II-VI materials in the absence of bandtails can be written as

E b00 kz2 G3; nx ; ny
2:61
where
G3; nx ; ny
2 (
( )1=2 3
2 2 )
pnx
pny
pnx 2
pny 2
5

k0
4a00
dx
dy
dx
dy
The EP photocurrent from NWs of II-VI materials is given by

I
nxmax nX
ymax n
n

o
a0 egv kB T X
F0 kB T 1 EF1d G3; nx ; ny W hm
2p
h n 1 n 1
x
y
n

oo
F0 kB T 1 EF1d G3; nx ; ny W hm
2:62
The 1D electron statistics can be written as
n1D
gv
q
ymax n
2mk pkB T nX
zmax
X
h
ny 1 nz 1

F12 g68; ; g68; kB T 1 EF1d G3; nx ; ny :
2:63
153
2.2.4 The EP from Nano Wires of HD IV-VI Semiconductors

(i) Dimmock Model
The 1D electron dispersion law in NW of HD IV-VI semiconductors can be
expressed following (1.174) as
2

h nx p 2 h2 ny p 2
h2 2
c2 E; gg ac3 E; gg

ac3 E; gg
k
2x4 dx
2x5 dy
2x6 z
2

h nx p 2
h2 ny p 2
1 ac3 E; gg

2x1 dx
2x2 dy
2
2

h nx p 2 h2 ny p 2
h nx p 2 h2 ny p 2
a

2x1 dx
2x2 dy
2x4 dx
2x5 dy
2
2
2
h nx p 2 h ny p 2 h 2
2:64
a

k
2x1 dx
2x2 dy
2x6 z

h2 2
1 ac3 E; gg
k
2x3 z

h4 kz4
h2 2 h2 nx p 2 h2 ny p 2
a
kz

a
2x3
2x4 dx
2x5 dy
4x3 x6
2 nx p 2
h
h2 ny p 2
h2 2

k
2m1 dx
2m2 dy
2m3 z
Equation (2.64) can be written as

kz T36 E; gg ; nx ; ny
2:65
where
T36 E; gg ; nx ; ny 2C22 1 BHD E; gg ; nx ; ny
q
B2HD E; gg ; nx ; ny 4C22 AHD E; gg ; nx ; ny 1=2
h4
C22 a
; BHD E; gg ; nx ; ny
4x3 x6
2

h nx p 2 h2 ny p 2 h2

a
2x1 dx
2x2 dy
2x6

h2
h2
1 ac3 E; gg
ac3 E; gg
2x3
2x6

2
2 2
2
h
h
h nx p 2 h ny p 2
a

2m3
2x3 2x4 dx
2x5 dy
154
and
h2 nx p 2
h2 ny p 2

c2 E; gg
AHD E; gg ; nx ; ny
2m1 dx
2m2 dy
2

h nx p 2 h2 ny p 2
ac3 E; gg

2x4 dx
2x5 dy
2

h nx p 2 h2 ny p 2
a

2x1 dx
2x2 dy
2

h nx p 2 h2 ny p 2

2x4 dx
2x5 dy

h2 nx p 2 h2 ny p 2
1 ac3 E; gg

2x1 dx
2x2 dy
ymax
xmax X
ao egv kB T X
F0 g614HD ;
I
ph
n 1 n 1
where

g614HD
2:66
0

EF1HDNW E14HDNW
W hm
;
kB T
2:66
0
and E14HDNW
0
; gg ; n x ; ny
0 T36 E14HDNW
2:67

m EF1HDNW ; gg ; nx ; ny
h2 o 2
T EF1HDNW ; gg ; nx ; ny
2 oE 36
2:68

nX
nymax

2gv xmax X
n1D
p nx 1 ny 1
2:69

where
T36HDNW EF1HDNW ; nx ; ny ; gg T36 EF1HDNW ; nx ; ny ; gg
where T37HDNW EF1HDNW ; nx ; ny ; gg
Ps
r1
155
The 1D electron dispersion law in NW of IV-VI semiconductors in the absence

of band tails can be expressed as
2

h nx p 2 h2 ny p 2

E1 aE aE
2x4 dx
2x5 dy
2

2
h 2
h nx p 2 h2 ny p 2
aE
k 1 aE

2x6 z
2x1 dx
2x2 dy
2

h nx p 2 h2 ny p 2
h2 nx p 2 h2 ny p 2
a

2x1 dx
2x2 dy
2x4 dx
2x5 dy
2:70
2

h nx p 2 h2 ny p 2 h2 2
h2 2
a

k 1 aE
k
2x1 dx
2x2 dy
2x6 z
2x3 z

h4 kz4
h2 2 h2 nx p 2 h2 ny p 2
a
kz

a
2x3
2x4 dx
2x5 dy
4x3 x6
2 nx p 2
h
h2 ny p 2
h2 2

k
2m1 dx
2m2 dy
2m3 z
Equation (2.70) can be written as

kz T40 E; nx ; ny
where
T40 E; nx ; ny 2C22 1 B0 E; nx ; ny
q
B20 E; nx ; ny 4C22 A0 E; nx ; ny 1=2
where

h2 nx p 2 h2 ny p 2 h2
h2

1 aE
2x1 dx
2x2 dy
2x6
2x3

2
2
2 2
2
h
h
h
h nx p 2 h ny p 2

aE
a

2x6 2m3
2x3 2x4 dx
2x5 dy
B0 E; nx ; ny a
and
h2 nx p 2
h2 ny p 2

E 1 aE
2m1 dx
2m2 dy
2

h nx p 2 h2 ny p 2
aE

2x4 dx
2x5 dy
2
2
h nx p 2 h2 ny p 2
h nx p 2
a

2x1 dx
2x2 dy
2x4 dx

h2 ny p 2
h2 nx p 2 h2 ny p 2
1 aE

2x5 dy
2x1 dx
2x2 dy
A0 E; nx ; ny
2:71
156

I
nxmax nX
ymax
ao egv kB T X
F0 g615 ;
ph
n 1 n 1
x
2:72
where

g615
0

EF1d E20
W hm
;
kB T
0
and E20
0
0 T40 E20
; nx ; n y
2:73

m EF1d ; nx ; ny
h2 o 2
T EF1d ; nx ; ny
2 oE 40
2:74

nX
nymax

2gv xmax X
n1D
T40 EF1d ; nx ; ny T41 EF1d ; nx ; ny
2:75
p n 1 n 1
x
where T41 EF1d ; nx ; ny
Ps
r1
LrT40 EF1d ; nx ; ny :
(ii) Bangert and Kastner Model

Following (1.194d), the 1D dispersion relation in NW of IV-VI semiconductors in
accordance with the present model can be written as

nx p

ny p
F1 E; gg 2 2 F2 E; gg kz2 1
dx
dy
2:76

where

nx p

ny p
T60 E; gg ; nx ; ny 1 F1 E; gg 2 2 F2 E; gg 1 1=2
dx
dy
2:77
157

ymax
xmax X
ao egv kB T X
F0 g615HD ;
ph
n 1 n 1
2:78
where

g615HD
0

EF1HDNW E15HDNW
W hm
;
kB T
0
and E15HDNW
0
0 T60 E15HDNW
; gg ; n x ; ny
2:79

h2 o 2
2 oE 40
2:80

nX
nymax

2gv xmax X
p n 1 n 1
x
y

n1D
2:81
where
and T51HDNW EF1HDNW ; nx ; ny ; gg
s
P
r1
The 1D dispersion relation in the absence of band tailing can be written in this
case following (1.194b) as
x1 E
pnx 2
pny
2 x2 Ekz2 1
dx
dy
2:82

kz T61 E; nx ; ny
2:83
158
where
T61 E; nx ; ny 1 x1 E
nx p 2
ny p
2 x2 E 1 1=2
dx
dy

I
nxmax nX
ymax
ao egv kB T X
F0 g616 ;
ph
n 1 n 1
x
where
2:84
0

EF1d E21
W hm

;
kB T

g616
0
and E21
0
0 T61 E21
; nx ; n y
2:85

m EF1d ; nx ; ny
h2 o 2
T EF1d ; nx ; ny
2 oE 61
2:86

n1D
nX
nymax

2gv xmax X
T61 EF1d ; nx ; ny T62 EF1d ; nx ; ny

p n 1 n 1
x
where T62 EF1d ; nx ; ny
2:87
Ps
r1
LrT61 EF1d ; nx ; ny :

Semiconductors
The 1D dispersion relation in this case can be written following (1.206) as

pnx

pny

P11 E; gg 2 Q11 E; gg 2 S11 E; gg kz2 1
2:88
dx
dy
2:89
159
where

pnx

pny

T70 E; gg ; nx ; ny 1 P11 E; gg 2 Q11 E; gg 2 S11 E; gg 1 1=2
dx
dy
ymax
xmax X
ao egv kB T X
F0 g630HD ;
ph
n 1 n 1
where
2:90
0

EF1HDNW E30HDNW
W hm

;
kB T

g630HD
0
and E30HDNW
0
0 T70 E30HDNW
; gg ; n x ; ny
2:91

h2 o 2
2 oE 70
2:92

nX
nymax

2gv xmax X
n1D
T70HDNW EF1HDNW ; nx ; ny ; gg T71HDNW EF1HDNW ; nx ; ny ; gg
p nx 1 ny 1
2:93
where
and
s
X
LrT70HDNW EF1HDNW ; nx ; ny ; gg
r1
In the absence of band tailing the 1D dispersion relation in this case assumes the
form
kz t70 E; nx ; ny
2:94
160
where
t70 E; nx ; ny c0 E1
pnx 2
pny 2 1=2

dx a0 E
dy b0 E

I
nxmax nX
ymax
ao egv kB T X
F0 g642 ;
ph
n 1 n 1
x
where
2:95
0

EF1d E42
W hm

;
kB T

g642
0
and E42
0
0 t60 E42
; nx ; ny
2:96

m EF1d ; nx ; ny
h2 o 2
t EF1d ; nx ; ny
2 oE 60
2:97


n1D
nxmax nX
ymax

2gv X
t60 EF1d ; nx ; ny t61 EF1d ; nx ; ny
p n 1 n 1
x
where t61 EF1d ; nx ; ny
2:98
Ps
r1
Lrt60 EF1d ; nx ; ny :
2.2.6 The EP from Nano Wires of HD Te

The 1D dispersion relation may be written in this case following (1.235) as
kx t72 E; ny ; nz ; gg
where

ny p
pnz
t72 E; ny ; nz ; gg 2 w5HD E; gg w6 2
dy
dz
1=2
pnz
w7 w28HD E; gg 2 1=2
dz
2:99
161

I
nymax nX
zmax
ao egv kB T X
F0 g631HD
2ph n 1 n 1
y
where
2:100
0

EF1HDNW E31HDNW
W hm

;
kB T

g631HD
0
and E31HDNW
0
0 t72 E31HDNW
; gg ; ny ; nz
2:101

m EF1HDNW ; gg ; ny ; nz
h2 o 2
t EF1HDNW ; gg ; ny ; nz
2 oE 72
2:102

n1D
nX
nzmax

2gv ymax X
t72HDNW EF1HDNW ; ny ; nz ; gg t73HDNW EF1HDNW ; ny ; nz ; gg
p n 1 n 1
y
2:103
where
t72HDNW EF1HDNW ; ny ; nz ; gg t72 EF1HDNW ; ny ; nz ; gg
and
t73HDNW EF1HDNW ; ny ; nz ; gg
s
X
Lrt72HDNW EF1HDNW ; ny ; nz ; gg ;
r1
In the absence of band tailing the 1D dispersion relation in this case assumes the
form
kx H70 E; ny ; nz
2:104
where
H70 E; ny ; nz
ny p 2
pnz
pnz
w5 E w6 2 w7 w28 E 2 1=2 1=2
dy
dz
dz
162

I
nymax nX
zmax
ao egv kB T X
F0 g644
2ph n 1 n 1
y
2:105
where

g644
0

EF1d E44
W hm
;
kB T
0
and E44
0
0 H70 E44
; ny ; nz
2:106

m EF1d ; ny ; nz
h2 o 2
H EF1d ; ny ; nz
2 oE 70
2:107


n1D
nymax nX
zmax

2gv X
H70 EF1d ; ny ; nz H71 EF1d ; ny ; nz
p n 1 n 1
y
where H71 EF1d ; ny ; nz
2:108
Ps
r1
LrH70 EF1d ; ny ; nz :
2.2.7 The EP from Nano Wires of HD GaP

kx u70 E; ny ; nz ; gg
where

ny p
nz p
u70 E; ny ; nz ; gg 2 t11 c3 E; gg t21 t31 2
dy
dz
1=2
nz p
t41 2 t52 E; gg 1=2
dz
2:109
163

ymax X
zmax
ao egv kB T X
F0 g632HD ;
ph
n 1 n 1
2:110
where

g632HD
0

EF1HDNW E32HDNW
W hm
;
kB T
0
and E32HDNW
0
0 u70 E32HDNW
; gg ; ny ; nz
2:111

h2 o 2
u EF1HDNW ; gg ; ny ; nz
2 oE 70
2:112

nX
nzmax

2gv ymax X
n1D
u70HDNW EF1HDNW ; ny ; nz ; gg u71HDNW EF1HDNW ; ny ; nz ; gg
p n 1 n 1
y
z
2:113
where
u70HDNW EF1HDNW ; ny ; nz ; gg u70 EF1HDNW ; ny ; nz ; gg
and
u71HDNW EF1HDNW ; ny ; nz ; gg
s
X
Lru70HDNW EF1HDNW ; ny ; nz ; gg ;
r1
In the absence of band tailing the 1D dispersion relation in this case can be
written using (1.260) as
kx X71 E; ny ; nz
where
X71 E; ny ; nz
ny p 2
t42 E; nz 1=2
dy
2:114
164

nymax nX
zmax
ao egv kB T X
F0 g646 ;
2ph n 1 n 1
y
z
0

EF1d E46
W hm
where g646
;
kB T
2:115
0
and E46
0
0 X71 E46
; ny ; nz
2:116

m EF1d ; ny ; nz
h2 o 2
X EF1d ; ny ; nz
2 oE 71
2:117


n1D
nymax nX
zmax

2gv X
X71 EF1d ; ny ; nz X72 EF1d ; ny ; nz
p n 1 n 1
y
2:118
where X72 EF1d ; ny ; nz
Ps
r1
LrX71 EF1d ; ny ; nz :
2.2.8 The EP from Nano Wires of HD PtSb2

kx V70 E; ny ; nz ; gg
2:119
np
where V70 E; ny ; nz ; gg dyy 2 A60 E; gg ; ny 1=2

ymax X
zmax
ao egv kB T X
F0 g634HD ;
ph
n 1 n 1
where
0

EF1HDNW E34HDNW
W hm

;
kB T

g634HD
2:120
165
0
and E34HDNW
0
0 V70 E34HDNW
; gg ; ny ; nz
2:121

h2 o 2
V EF1HDNW ; gg ; ny ; nz
2 oE 70
2:122

n1D
nX
nzmax

2gv ymax X
V70HDNW EF1HDNW ; ny ; nz ; gg V71HDNW EF1HDNW ; ny ; nz ; gg
p ny 1 nz 1
2:123
where
V70HDNW EF1HDNW ; ny ; nz ; gg V70 EF1HDNW ; ny ; nz ; gg
and
V71HDNW EF1HDNW ; ny ; nz ; gg
s
X
LrV70HDNW EF1HDNW ; ny ; nz ; gg ;
r1
kx D71 E; ny ; nz
2:124
where
D71 E; ny ; nz
ny p 2
t44 E; nz 1=2
dy

I
nymax nX
zmax
ao egv kB T X
F0 g648 ;
2ph n 1 n 1
y
where
0

EF1d E48
W hm

;
kB T

g648
2:125
166
0
and E48
0
0 D71 E48
; ny ; nz
2:126

m EF1d ; ny ; nz
h2 o 2
D EF1d ; ny ; nz
2 oE 71
2:127

n1D
nX
nzmax

2gv ymax X
D71 EF1d ; ny ; nz D72 EF1d ; ny ; nz
p ny 1 nz 1
where D72 EF1d ; ny ; nz
Ps
r1
2:128a
LrD71 EF1d ; ny ; nz :
2.2.9 The EP from Nano Wires of HD Bi2Te3

The dispersion relation in this case can be written following (1.285) as
kx J70 E; ny ; nz ; gg
2:128b
where
J70 E; ny ; nz ; gg c2 E; gg x2
ny p 2
nz p
ny nz p 2
x3 2 2x4
x1 1 1=2
dy
dz
dy dz

ymax X
zmax
ao egv kB T X
F0 g650HD ;
ph
n 1 n 1
where
2:129
0

EF1HDNW E50HDNW
W hm

;
kB T

g650HD
0
and E50HDNW
0
0 J70 E50HDNW
; gg ; ny ; nz
2:130
167

h2 o 2
J EF1HDNW ; gg ; ny ; nz
2 oE 70
2:131

nX
nzmax

2gv ymax X
J70HDNW EF1HDNW ; ny ; nz ; gg
p n 1 n 1
y
z

n1D
2:132
where
J70HDNW EF1HDNW ; ny ; nz ; gg J70 EF1HDNW ; ny ; nz ; gg
and
s
X
LrJ70HDNW EF1HDNW ; ny ; nz ; gg ;
r1
kx B71 E; ny ; nz
2:133
where
B71 E; ny ; nz E1 aE x2
ny p 2
nz p
ny nz p2
x3 2 2x4
x1 1 1=2
dy
dz
dy dz

I
nymax nX
zmax
ao egv kB T X
F0 g650 ;
2ph n 1 n 1
y
where
0
and E50
2:134
0

EF1d E50
W hm
g650
;
kB T

0
0 B71 E50
; ny ; nz
2:135
168

m EF1d ; ny ; nz
h2 o 2
B EF1d ; ny ; nz
2 oE 71
2:136


n1D
nymax nX
zmax

2gv X
B71 EF1d ; ny ; nz B72 EF1d ; ny ; nz
p n 1 n 1
y
2:137
where B72 EF1d ; ny ; nz
Ps
r1
LrB71 EF1d ; ny ; nz :
2.2.10 The EP from Nano Wires of HD Ge

(a) Model of Cardona et al.
The dispersion relation in accordance with this model in the present case can be
written following (1.306b) as
kx L70 E; ny ; nz ; gg
2:138
where
L70 E; ny ; nz ; gg c2 E; gg a
h2 nz p 2 2

2mk dz
1 2ac3 E; gg

h2 nz p 2 2mk 1=2

2mk dz
h2

ymax X
zmax
ao egv kB T X
F0 g652HD ;
ph
n 1 n 1
where
0

EF1HDNW E52HDNW
W hm

;
kB T

g652HD
2:139
169
0
and E52HDNW
0
0 L70 E52HDNW
; gg ; ny ; nz
2:140

h2 o 2
L EF1HDNW ; gg ; ny ; nz
2 oE 70
2:141

n1D
nX
nzmax

2gv ymax X
L70HDNW EF1HDNW ; ny ; nz ; gg L71HDNW EF1HDNW ; ny ; nz ; gg

p ny 1 nz 1
2:142
where
L70HDNW EF1HDNW ; ny ; nz ; gg L70 EF1HDNW ; ny ; nz ; gg
and
L71HDNW EF1HDNW ; ny ; nz ; gg
s
X
LrL70HDNW EF1HDNW ; ny ; nz ; gg
r1
kx B77 E; ny ; nz
2:143
where
B77 E; ny ; nz E1 aE a
h2 nz p 2 2
h2 nz p 2mk
1 2aE 2 2 1=2

2mk dz
2mk dz
h

I
nymax nX
zmax
ao egv kB T X
F0 g660 ;
2ph n 1 n 1
y
where
0

EF1d E60
W hm

;
kB T

g660
2:144
170
0
and E60
0
; ny ; nz
0 B77 E60
2:145

m EF1d ; ny ; nz
h2 o 2
B EF1d ; ny ; nz
2 oE 77
2:146

nX
nzmax

2gv ymax X
n1D
B77 EF1d ; ny ; nz B78 EF1d ; ny ; nz
2:147
p ny 1 nz 1
where B78 EF1d ; ny ; nz
Ps
r1
LrB77 EF1d ; ny ; nz :
(b) Model of Wang et al.

The dispersion relation in accordance with this model in the present case can be
kx b70 E; ny ; nz ; gg
2:148
where
ny p 2 2m?
pnz
pnz
pnz
2 a8 a9 2 a10 4 a11 2
dy
dz
dz
dz
h
a12 E; gg 1=2 1=2
b70 E; ny ; nz ; gg

ymax X
zmax
ao egv kB T X
F0 g654HD
ph
n 1 n 1
where
2:149
0

EF1HDNW E54HDNW
W hm

;
kB T

g654HD
0
and E54HDNW
0
0 b70 E54HDNW
; gg ; ny ; nz
2:150
171

h2 o 2
b EF1HDNW ; gg ; ny ; nz
2 oE 70
2:151

nX
nzmax

2gv ymax X
n1D
b70HDNW EF1HDNW ; ny ; nz ; gg b71HDNW EF1HDNW ; ny ; nz ; gg
p ny 1 nz 1
2:152
where
b70HDNW EF1HDNW ; ny ; nz ; gg b70 EF1HDNW ; ny ; nz ; gg
and
b71HDNW EF1HDNW ; ny ; nz ; gg
s
X
Lrb70HDNW EF1HDNW ; ny ; nz ; gg
r1
kx P77 E; ny ; nz
2:153
where
P77 E; ny ; nz I1 E; nz
h2 ny p 2 2m1 1=2

2
2m2 dy
h

I
nymax nX
zmax
ao egv kB T X
F0 g680 ;
2ph n 1 n 1
y
2:154
where
0

EF1d E80
W hm

;
kB T

g680
0
and E80
0
; ny ; nz
0 P77 E80
2:155
172

m EF1d ; ny ; nz
h2 o 2
P EF1d ; ny ; nz
2 oE 77
2:156

nX
nzmax

2gv ymax X
n1D
P77 EF1d ; ny ; nz P78 EF1d ; ny ; nz
2:157
p n 1 n 1
y
where P78 EF1d ; ny ; nz
Ps
r1
LrP77 EF1d ; ny ; nz :
2.2.11 The EP from Nano Wires of HD GaSb

2 nz p=dz 2 h2 ny p=dy 2 h2 kx2
h
I36 E; gg
2mc
2mc
2mc
2:158

ymax X
zmax
ao egv kB T X
F0 g100HD ;
ph
n 1 n 1
2:159
where

g100HD
0

EF1HDNW E100HDNW
W hm
kB T
0
and E100HDNW

0
I36 E100HDNW
; gg
2mc
2mc
2:160

m EF1HDNW ; gg mc I036 EF1HDNW ; gg
2:161
173

n1D
nX
nzmax

2gv ymax X
R7HDNW EF1HDNW ; ny ; nz ; gg R8HDNW EF1HDNW ; ny ; nz ; gg
p ny 1 nz 1
2:162
where
R7HDNW EF1HDNW ; ny ; nz ; gg I36 EF1HDNW ; gg
h2 nz p=dz 2
2mc
h2 ny p=dy 2 2mc 1=2

2
2mc
h
P
where R8HDNW EF1HDNW ; ny ; nz ; gg sr1 LrR7HDNW EF1HDNW ; ny ; nz ; gg
The expression of 1D dispersion relation, for NWs of GaSb whose energy band
structures in the absence of band tailing assumes the form
I36 E

h2 kx2
G 2 ny ; nz
2mc
2:163
0
is given by
In this case, the quantized energy E101

0
I36 E101
G2 ny ; nz
2:164

I
nymax nX
zmax
ao egv kB T X
F0 g101 ;
ph
ny 1 nz 1
2:165
where
0

EF1d E101
W hm

kB T

g101

n1D
2gv
p nymax nzmax
2mc X X
h
ny 1 nz 1

R101 EF1d ; ny ; nz R102 EF1d ; ny ; nz
2:166
174
where

1=2
R101 EF1d ; ny ; nz I36 EF1d G2 ny ; nz
;
s

X

Lr R101 EF1d ; ny ; nz :
R102 EF1d ; ny ; nz
r1

Using the appropriate equations and taking the energy band constants as given in
the Table 1.1, we have plotted the normalized EP from NWs of HD CdGeAs2 (an
example of nonlinear optical materials) as a function of dx as shown in plot (a) of
Fig. 2.1, in which the plot (b) corresponds to d 0. The plot (c) has been drawn in
accordance with the three band model of Kane and the plot (d) refers to the two
band model of Kane together with the plot (e) exhibiting the variation in accordance
with the parabolic energy bands for the overall assessments of the energy band
constants on the EP in this case. The Fig. 2.2 exhibits the plots of the normalized EP
from NWs of HD CdGeAs2 as a function of the normalized incident photon energy
Fig. 2.1 Plot of the normalized EP from NWs of HD CdGeAs2 as a function of dz in accordance
with a generalized band model, b d 0, c the three-band model of Kane, d the two band model of
Kane and e the parabolic energy bands
175
for all cases Figs. 2.1 and 2.3 shows the dependence of the said variable on the
normalized electron degeneracy for all cases of Fig. 2.1.
The normalized EP from NWs of HD n-InAs (an example of III-V materials) in
accordance with the HD three and two band models of Kane as functions of lm
thickness, normalized incident photon energy and the normalized electron degeneracy have, respectively, been presented in Figs. 2.4, 2.5 and 2.6. The Figs. 2.7, 2.8
and 2.9 exhibit the variations of normalized EP from NWs of HD n-InSb as
functions of lm thickness, normalized incident photon energy and the normalized
electron degeneracy respectively. The variations of the normalized EP from NWs of
HD CdS (an example of II-VI materials) as functions of thickness, normalized
incident photon energy and normalized electron degeneracy have respectively been
drawn in Figs. 2.10, 2.11 and 2.12, where the plots for k0 0 have further been
drawn for the purpose of assessing the influence of the splitting of the two-spin
states by the spin orbit coupling and the crystalline eld. The thickness, normalized
photon energy and the normalized electron degeneracy dependences of normalized
EP from NWs of HD GaP have been shown in Figs. 2.13, 2.14 and 2.15 respectively. The dependence of normalized EP with reference to the aforementioned
variables from NWs of HD n-Ge and PtSb2, has been shown in Figs. 2.16, 2.17,
2.18, 2.19, 2.20 and 2.21 in accordance with the HD models of Cardona et al.,
Wang and Ressler and Emtage respectively. Figures 2.22, 2.23 and 2.24 manifest
the variations of the normalized EP from from NWs of HD stressed n-InSb as
Fig. 2.2 Plot of the normalized EP from NWs of HD CdGeAs2 as a function of normalized
incident photon energy for all cases of Fig. 2.1
176
Fig. 2.3 Plot of the normalized EP from NWs of HD CdGeAs2 as a function of normalized
Fig. 2.4 Plot of the normalized EP from NWs of HD n-InAs as a function of dz in accordance
with a the three band model of Kane and b the two band model of Kane
177
Fig. 2.5 Plot of the normalized EP from NWs of HD n-InAs as a function of normalized incident
photon energy in accordance with a the three band model of Kane and b the two band model of Kane
Fig. 2.6 Plot of the normalized EP from NWs of HD n-InAs as a function of normalized electron
178
Fig. 2.7 Plot of the normalized EP from NWs of HD n-InSb as a function of dz in accordance with
Fig. 2.8 Plot of the normalized EP from NWs of HD n-InSb as a function of normalized incident
Kane
179
Fig. 2.9 Plot of the normalized EP from NWs of HD n-InSb as a function of normalized electron
Fig. 2.10 Plot of the normalized EP from NWs of HD CdS as a function of dz with a
k0 6 0 and
b
k0 0
180
Fig. 2.11 Plot of the normalized EP from NWs of HD CdS as a function of normalized incident
k0 0
photon energy with a
k0 6 0 and b
Fig. 2.12 Plot of the normalized EP from NWs of HD CdS as a function of normalized electron
k0 0
degeneracy with a k0 6 0 and b
181
Fig. 2.13 Plot of the normalized EP from NWs of HD n-GaP as a function of dz
Fig. 2.14 Plot of the normalized EP from NWs of HD n-GaP as a function of normalized incident
photon energy
182
Fig. 2.15 Plot of the normalized EP from NWs of HD n-GaP as a function of normalized electron
degeneracy
Fig. 2.16 Plot of the normalized EP from NWs of HD n-Ge as a function of thickness in
accordance with the models of a Cardona et al. and b Wang et al.
183
Fig. 2.17 Plot of the normalized EP from NWs of HD n-Ge as a function of normalized incident
photon energy for all the cases of Fig. 2.16
functions of the lm thickness, normalized incident photon energy and the normalized electron degeneracy respectively.
The Figs. 2.25, 2.26 and 2.27 exhibit the normalized EP as functions of lm
thickness, normalized incident photon energy and normalized electron degeneracy
from NWs of HD PbTe as a function of lm thickness in accordance with the
models of (a) the Dimmok and (b) the Bangert and Kastner respectively. The plots
(c) and (d) exhibit the same for PbSe.
The influence of quantum connement is immediately apparent from Figs. 2.1,
2.4, 2.7, 2.10, 2.13, 2.16, 2.19, 2.22 and 2.25. Since the EP depends strongly on the
thickness of the quantum-conned materials in contrast with the corresponding bulk
specimens. The EP decreases with increasing lm thickness in an oscillatory way
with different numerical magnitudes for HD NWs as compared with HD QWs. It
appears from the aforementioned gures that the EP exhibits spikes for particular
values of lm thickness which, in turn, depends on the particular band structure of
the specic material. Moreover, the EP from HD NWs of different compounds can
become several orders of magnitude larger than of bulk specimens of the same
materials, which is also a direct signature of quantum connement. This oscillatory
dependence will be less and less prominent with increasing lm thickness.
It appears from Figs. 2.3, 2.6, 2.9, 2.12, 2.15, 2.18, 2.21 and 2.24 that the EP
increases with increasing degeneracy and also exhibits spikes for all types of
quantum connement as considered in this chapter. For bulk specimens of the same
material, the EP will be found to increase continuously with increasing electron
184
Fig. 2.18 Plot of the normalized EP from NWs of HD n-Ge as a function of normalized electron
degeneracy for all the cases of Fig. 2.16
Fig. 2.19 Plot of the normalized EP from NWs of HD n-PtSb2 as a function of lm thickness
185
Fig. 2.20 Plot of the normalized EP from NWs of HD n-PtSb2 as a function of normalized
Fig. 2.21 Plot of the normalized EP from NWs of HD n-PtSb2 as a function of normalized
electron degeneracy
186
Fig. 2.22 Plot of the normalized EP from NWs of HD stressed n-InSb as a function of lm
thickness
Fig. 2.23 Plot of the normalized EP from NWs of HD stressed n-InSb as a function of normalized
187
Fig. 2.24 Plot of the normalized EP from NWs of HD stressed n-InSb as a function of normalized
electron degeneracy
Fig. 2.25 Plot of the normalized EP from NWs of HD PbTe as a function of lm thickness in
accordance with the models of a the Dimmok and b the Bangert and Kastner respectively. The
188
Fig. 2.26 Plot of the normalized EP from QWs of HD PbTe as a function of normalized incident
photon energy in accordance with the models of a the Dimmok and b the Bangert and Kastner
respectively. The plots c and d exhibit the same for PbSe
Fig. 2.27 Plot of the normalized EP from QWs of HD PbTe as a function of electron degeneracy
in accordance with the models of a the Dimmok and b the Bangert and Kastner respectively. The
189
degeneracy in a non-oscillatory manner. The Figs. 2.2, 2.5, 2.8, 2.11, 2.14, 2.17,
2.20 and 2.23 illustrate the dependence of the EP from quantum-conned materials
on the normalized incident photon energy. The EP increases with increasing photon
energy in a step like manner for all the gures. The appearance of the discrete
jumps in all the gures is due to the redistribution of the electrons among the
quantized energy levels when the size quantum number corresponding to the
highest occupied level changes from one xed value to the others. With varying
electron degeneracy, a change is reflected in the EP through the redistribution of the
electrons among the size-quantized levels. It may be noted that at the transition zone
from one sub band to another, the height of the peaks between any two sub-bands
decreases with the increasing in the degree of quantum connement and is clearly
shown in all the curves. It should be noted that although, the EP varies in various
manners with all the variables as evident from all the gures, the rates of variations
are totally band-structure dependent.
Finally, it may be noted that the basic aim of this chapter is not solely to
demonstrate the influence of quantum connement on the EP from NWs of HD
non-linear optical, III-V, II-VI, IV-VI, n-GaP, n-Ge, PtSb2, and stressed compounds
respectively but also to formulate the appropriate electron statistics in the most
generalized form, since the transport and other phenomena in quantized structures
having different band structures and the derivation of the expressions of many
important electronic properties are based on the temperature-dependent electron
statistics in such materials.

(R:2:1) Investigate the EP for bulk specimens of the HD semiconductors in the
presences of Gaussian, exponential, Kane, Halperian, Lax and BonchBurevich types of band tails for all systems whose unperturbed carrier
energy spectra are dened in R.1.1 in the presence of strain.
(R:2:2) Investigate the EP for NWs of all the HD semiconductors as considered
in R.1.2.
(R:2:3) Investigate the EP in the presence of strain for HD bulk specimens of the
eld.
(R:2:4) Investigate the EP for the NWs of HD negative refractive index, organic,
(R:2:5) Investigate the EP for the multiple NWs of HD materials whose
unperturbed carrier energy spectra are dened in R.1.1.
(R:2:6) Investigate the EP for all the appropriate HD low dimensional systems of
this chapter in the presence of nite potential wells.
190
(R:2:7) Investigate the EP for all the appropriate HD low dimensional systems of
this chapter in the presence of parabolic potential wells.
(R:2:8) Investigate the EP for all the appropriate HD systems of this chapter
(R:2:9) Investigate the EP for all the above appropriate problems in the presence
of elliptical Hill and quantum square rings in the presence of strain.
(R:2:10) Investigate the EP for parabolic cylindrical HD low dimensional systems
in the presence of an arbitrarily oriented alternating electric eld for all
the HD materials whose unperturbed carrier energy spectra are dened in
R.1.1 in the presence of strain.
(R:2:11) Investigate the EP for HD low dimensional systems of the negative
waves and in the presence of strain.
(R:2:12) Investigate the EP for triangular HD low dimensional systems of the
(R:2:13) Investigate the EP for all the problems of (R.1.12) in the presence of
alternating magnetic eld.
elds.
(R:2:18) Investigate the EP for HD NWs of the negative refractive index, organic
and magnetic materials.
and magnetic materials in the presence of alternating time dependent
magnetic eld.
and magnetic materials in the presence of in the presence of crossed
alternating electric eld and alternating quantizing magnetic elds.
(R:2:21) (a) Investigate the EP for HD NWs of the negative refractive index,
organic, magnetic and other advanced optical materials in the presence
of an arbitrarily oriented alternating electric eld considering many body
effects.
191
(b) Investigate all the appropriate problems of this chapter for a Dirac electron.
(R:2:22) Investigate all the appropriate problems of this chapter by including the
(R:2:23) Investigate all the appropriate problems of this chapter by removing all
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Chapter 3
The EP from Quantum Box of Heavily

Doped (HD) Non-parabolic
Semiconductors
3.1 Introduction
It is well known that as the dimension of the QWs increases from 1D to 3D, the
degree of freedom of the free carriers decreases drastically and the density-of-states
function changes from the Heaviside step function in OWs to the Diracs delta
function in Quantum Box (QB) [1, 2].
The QBs can be used for visualizing and tracking molecular processes in cells
using standard fluorescence microscopy [36]. They display minimal photobleaching [7], thus allowing molecular tracking over prolonged periods and consequently, single molecule can be tracked by using optical fluorescence microscopy
[8, 9]. The salient features of quantum dot lasers [1012] include low threshold
currents, higher power, and great stability as compared with the conventional one
and the QBs nd extensive applications in nano-robotics [1316], neural networks
[1719] and high density memory or storage media [20]. The QBs are also used in
nano-photonics [21] because of their theoretically high quantum yield and have
been suggested as implementations of qubits for quantum information processing
[22]. The QBs also nd applications in diode lasers [23], ampliers [24, 25], and
optical sensors [26, 27]. High-quality QBs are well suited for optical encoding [28,
29] because of their broad excitation proles and narrow emission spectra. The new
generations of QBs have far-reaching potential for the accurate investigations of
intracellular processes at the single-molecule level, high-resolution cellular imaging,
long-term in vivo observation of cell trafcking, tumor targeting, and diagnostics
[30, 31]. The QB nanotechnology is one of the most promising candidates for use in
solid-state quantum computation [32, 33]. It may also be noted that the QBs are
being used in single electron transistors [34, 35], photovoltaic devices [36, 37],
photoelectrics [38], ultrafast all-optical switches and logic gates [3942], organic
dyes [4345] and in other types of nano devices.
In this chapter in Sects. 3.2.1, 3.2.2, 3.2.3, 3.2.4, 3.2.5, 3.2.6, 3.2.7, 3.2.8, 3.2.9,
3.2.10 and 3.2.11 we have investigated the EP from QBs of HD non-linear optical,
DOI 10.1007/978-3-319-11188-9_3
193
3 The EP from Quantum Box
194
III-V, II-VI, stressed Kane type, Te, GaP, PtSb2, Bi2Te3, Ge and GaAs respectively.
The Sect. 3.3 contains the result and discussions pertaining to this chapter. The
Sect. 3.4 presents 23 open research problems.

3.2.1 The EP from QB of HD Nonlinear Optical
Semiconductors
2 nz p=dz 2
h
h2 ny p=dy 2
h2 nx p=dx 2
1
2mk T21 E1QBHD ; gg 2mk T22 E1QBHD ; gg 2mk T21 E1QBHD ; gg
3:1
where E1QBHD is the totally quantized energy in this case.

The total density-of-states function in this case is given by
N0DT E
nxmax nymax nzmax

XX
2gv X
d0 E E1QBHD
dx dy dz nx1 ny1 nz1
3:2
where d0 E E1QBHD is the Diracs Delta function.

Using (3.2) and Fermi-Dirac occupation probability factor, the total electron
concentration can be written as
n0D
nxmax nymax nzmax

XXX
2gv
Real part of
F1 g31HD
dx dy dz
nx1 ny1 nz1
3:3
where g31HD kB T 1 EF0DHD E1QBHD and EF0DHD is the Fermi energy in this
case.
Therefore the electron concentration per sub-band is given by
Dn0D
2gv
Real part of F1 g31HD
d x dy dz
3:4
The quantized energy along Z direction the EnzHD1 in this case is given by
h2 nz p=dz 2

2mk T21 EnzHD1 ; gg
3:5
195
The expression of the total photo-emitted current density in this case is

J0D
nxmax nymax nzmax

XXX

ea0 gv
Real part of
Dn0D vz EnzHD1
2
nx1 ny1 nz
3:6
min
0
where vz EnzHD1 nz phmk dz T21
EnzHD1 ; gg 1 .
For the purpose of comparison we shall also formulate the EP in the absence of
band tails is this case.
Let Eni i x; y and z be the quantized energy levels due to innitely deep
potential well along ith-axis with ni 1; 2; 3; . . . as the size quantum numbers.
Therefore, from (1.2), one can write
2
pnx
cEnx f1 Enx
dx
3:7

pny 2
c Eny f1 Eny
dy
3:8

pnz 2
f2 Enz
dz
3:9
c Enz
From (1.2), the totally quantized energy EQD1 can be expressed as

"
cEQD1 f1 EQD1
pnx
dx
" #
2 2 #
pny
pnz 2
f2 EQD1
dy
dz
3:10
The total density-of-states function in this case is given by

nxmax nymax nzmax
XX
2gv X
d0 E EQD1
N0DT E
3:11
The total electron concentration in this case can be written as

n0D
nxmax nymax nzmax

XX
2gv X
F1 g31 where g31 kB T 1 EF0D EQD1 3:12

Dn0D

2gv
F1 g31
dx dy dz
3:13
196

J0D
nxmax nymax nzmax

XX

ea0 gv X
Dn0D vz Enz
2 nx1 ny1 nz
3:14
min
where the nzmin should be the nearest integer of the following inequality
p
dz cW hm
p
nzmin
p f2 W hm
3:15
and the velocity of the photo-emitted electrons in the nz th sub-band can be written
as
1
vz Enz Q1 Enz
h

in which Q1 Enz
3:16
Enz cEnz
f2 Enz c0 Enz cEnz f20 Enz
Using the appropriate equations we get
3=2
2f2

J0D
ea0 gv
hdx dy dz
1=2
nX
xmax nymax nzmax
XX

F1 g31 Q1 Enz :
3:17
nx1 ny1 nzmin
3.2.2 The EP from QB of HD III-V Semiconductors

The dispersion relation of the conduction electrons of III-V semiconductors are
described by the models of Kane (both three and two bands) Stillman et al. and
Palik et al., respectively. For the purpose of complete and coherent presentation, the
EP effect in QBs of HD III-V compounds have also been investigated in accordance
with the aforementioned different dispersion relations for relative comparison as
follows:
(a) The three band model of Kane
2 nz p=dz 2 h2 ny p=dy 2 h2 nx p=dx 2
h
T44 E2QBHD ; gg
2mc
2mc
2mc
3:18
where T44 E2QBHD ; gg T31 E2QBHD ; gg iT31 E2QBHD ; gg and E2QBHD is

the totally quantized energy in this case.
197
The total electron concentration can be written as

n0D
nxmax nymax nzmax

XXX
2gv
Real part of
F1 g32HD
dx dy dz
nx1 ny1 nz1
3:19
where g32HD kB T 1 EF0DHD E2QBHD :

Dn0D
2gv
Real part of F1 g32HD
dx dy d z
3:20
h2 nz p=dz 2
1
2mc T44 EnzHD2 ; gg
3:21

J0D
nxmax nymax nzmax

XXX

ea0 gv
Real part of
Dn0D vz2 EnzHD2
2
nx1 ny1 nz
3:22
min
0
where vz2 EnzHD2 nz phmc dz T44
EnzHD2 ; gg 1
The quantized energy levels (Enx ; Eny and Enz along x, y, and z directions
respectively) in the absence of band tails in QBs of III-V semiconductors in
accordance with the three band model of Kane can be expressed as

h2 pnx 2
I11 Enx
2mc dx
3:23

h2 pny 2
I11 Eny
2mc dy
3:24
and I11 Enz

h2 pnz 2
2mc dz
3:25
The totally quantized energy EQD2 (changed) in this case assumes the form
h2 p2
I11 EQD2
2mc
" #
nx 2
ny 2
nz 2
dx
dy
dz
3:26
198
The velocity of the photoelectron in the nz th quantized level is given by

vz Enz
r
2
Q2 Enz
mc
3:27
h 0 i1 q

where, Q2 Enz I11 Enz
I11 Enz
Thus the photo-emitted current density can be expressed as
"
J0D
a0 egv

dx dy dz
r# nxmax nymax nzmax

2 XXX
Q2 Enz F1 g32
mc nx1 ny1 nz
3:28
min
in which nzmin is the nearest integer of the following inequality,

p

dz 2mc
1=2
I11 W hm
nzmin
p h
3:29
and g32 kB T 1 EF0D EQD2

The electron concentration in this case is given by
n0D
nxmax nymax nzmax

XX
2gv X
F1 g32 :
3:30
(b) The two band model of Kane

h
c2 E3QBHD ; gg
2mc
2mc
2mc
3:31
and E3QBHD is the totally quantized energy in this case.

n0D
nxmax nymax nzmax

XX
2gv X
F1 g33HD
3:32

Dn0D
2gv
F1 g33HD
dx dy dz
3:33
199
h2 nz p=dz 2
1
2mc c2 EnzHD3 ; gg
3:34

J0D
nxmax nymax nzmax

XX

ea0 gv X
Dn0D vz3 EnzHD3

2 nx1 ny1 nz
3:35
min
where vz3 EnzHD3 nz phmc dz c02 EnzHD3 ; gg 1

For two band model of Kane and the photo-emitted current density in the
absence of band tails assumes the form
J0D
a0 gv e
dx dy dz

r nX
xmax nymax nzmax
XX
2
Q3 Enz F1 g33
mc nx1 ny1 nz
3:36
min
1=2
c
, Q3 Enz
where, nzmin dpz 2m
h W hm1 aW hm

1
1 2aEnz and g33 kB T EF0D EQD3
The Enz obeys the equation

h2 p2 nz 2
Enz 1 aEnz
2mc dz
hq

Enz 1 aEnz =
3:37
The totally quantized energy EQD3 in this case is given by

h2 p2
EQD3 1 aEQD3
2mc
" #
nx 2
ny 2
nz 2
dx
dy
dz
3:38

n0D
nxmax nymax nzmax

XX
2gv X
F1 g33 :
3:39
(c) The parabolic energy bands

h
c3 E4QBHD ; gg
2mc
2mc
2mc
3:40
200

n0D
nxmax nymax nzmax

XX
2gv X
F1 g34HD
3:41

Dn0D
2gv
F1 g34HD
dx dy dz
3:42
h2 nz p=dz 2
1
2mc c3 EnzHD4 ; gg
3:43

J0D
nxmax nymax nzmax

XX

ea0 gv X
Dn0D vz4 EnzHD4
2 nx1 ny1 nz
3:44
min
where vz4 EnzHD4 nz phmc dz c03 EnzHD4 ; gg 1

In the absence of band tails the expressions for Dn0D , Enz , nzmin , J0D and total
electron concentration n0D , for QBs of wide-gap materials can, respectively,
be written as
Dn0D
3:46
p
2mc p
dz
W hv
p
h
3:47
nxmax nX
ymax n
zmax
X
ao ehpgv X
nz F1 g0
mc dx dy dz2 n 1 n 1 nz
x
n0D
3:45

h2 nz p 2
Enz
2mc dz
nzmin
J0D
2gv
F1 g0
dx dy d z
nxmax nX
ymax n
zmax
X
2gv X
F1 g0
dx dy dz n 1 n 1 n 1
x
h
where, g0 kB T1 EF0D 2m
ndzzp2 :
c
2
3:48
min
3:49
201
(d) The Model of Stillman et al.

The dispersion relation of the electrons in this case can be written following
(2.40) as
h
h4 E5QBHD ; gg
2mc
2mc
2mc
3:50

n0D
nxmax nymax nzmax

XX
2gv X
F1 g35HD
3:51

Dn0D
2gv
F1 g35HD
dx dy dz
3:52
h2 nz p=dz 2
1
2mc h4 EnzHD5 ; gg
3:53

J0D
nxmax nymax nzmax

XX

ea0 gv X
Dn0D vz5 EnzHD5
2 nx1 ny1 nz
3:54
min
where vz5 EnzHD5 nz phmc dz h04 EnzHD5 ; gg 1

In the absence of band tails, the photoelectric current density in this case can
be written as
J0D
nxmax nX
ymax n
zmax
X

a0 gv e 2 1=2 X
Q5 Enz F1 g35

dx dy dz mc
n 1 n 1 nz
x
p
1=2
2mc
,
h I12 W hm
1
kB T EF0D EQD5
where nzmin
and g35
dz
p
3:55
min
h
1=2 0
1 i
Q5 Enz I12 Enz
I12 Enz
202
The Enz obeys the equation

2

h =2mc pnz =dz 2 I12 Enz
The EQD5 in this case can be dened as
" #
h2 p2
nx 2
ny 2
nz 2
I12 EQD5
2mc
dx
dy
dz
3:56
3:57

n0D
nxmax nymax nzmax

XX
2gv X
F1 g35 :
3:58
(e) The model of Palik et al.

The dispersion relation of the electrons in this case can be written following
(2.48) as
h
h5 E6QBHD ; gg
2mc
2mc
2mc
3:59

n0D
nxmax nymax nzmax

XX
2gv X
F1 g36HD
3:60

Dn0D
2gv
F1 g36HD
dx dy dz
3:61
h2 nz p=dz 2
1
2mc h5 EnzHD6 ; gg
3:62

J0D
nxmax nymax nzmax

XX

ea0 gv X
Dn0D vz6 EnzHD6

2 nx1 ny1 nz
min
where vz6 EnzHD6 nz phmc dz h05 EnzHD6 ; gg 1
3:63
203
The photoemission current density in the absence of band tails in this case is
given by
J0D
1=2 nX
ymax n
xmax n
zmax
X
X

a0 egv
2
Q7 Enz F1 g37
hdx dy dz mc
n 1 n 1 nz
x
where, nzmin
p
dz
2mc
h
EF0D EQD7
kB T
3:64
min
h
1=2 0 i
I13 W hm1=2 , Q7 Enz I13 Enz
=I13 Enz
and g37
The Enz and EQD7 are dened by the following equations:
I13 Enz
h2
I13 EQD7
2mc

h2 pnz 2
2mc dz
" #
pnx 2
pny 2
pnz 2
dx
dy
dz
3:65
3:66

n0D
nxmax nymax nzmax

XX
2gv X
F1 g37 :
3:67
3.2.3 The EP from QB of HD II-VI Semiconductors

The 0D electron dispersion law in QB of HD II-VI semiconductors can be written
following (2.56) as
c3 E7QBHD ; gg a00
nx p 2
ny p
nx p
ny p
h2 nz p=dz 2
2 k0 2 2 1=2
dx
dy
dx
dy
2mk
3:68

n0D
nxmax nymax nzmax

XX
gv X
F1 g37HD
3:69
204

Dn0D
gv
F1 g37HD
dx dy d z
3:70
h2 nz p=dz 2
1
2mk c3 EnzHD7 ; gg
3:71

J0D
nxmax nymax nzmax

XX

ea0 gv X
Dn0D vz7 EnzHD7
4 nx1 ny1 nz
3:72
min
where vz7 EnzHD7 nz phmk dz c03 EnzHD7 ; gg 1

In the absence of band tails the totally quantized energy EQD10; in this case can
be expressed as
EQD10;
" #
" #1=2

2
2
2
pn
pn
1
h

pn
pnx 2
pny 2
x
y
z
a00
k0

2mk dz
dx
dy
dx
dy
3:73
The mz Enz and Enz are given by

h pnz
vz Enz
mjj dz
Enz

h2 pnz 2
2mjj dz
3:74
3:75

n0D
nxmax nX
ymax n
zmax
X

gv X
F1 g40;
x
3:76
where, g40; kB1T EF0D EQD10;

The photo-emitted current density is given by
J0D
nxmax nX
ymax n
zmax
X

a0 gv hpe X
nz F1 g40;

2
2dx dy dz mjj n 1 n 1 nz
x
where, nzmin
dz
p
p
2mjj
h
W hm1=2 :
min
3:77
205
3.2.4 The EP from QB of HD IV-VI Semiconductors

(a) Dimmock Model
In this case the dispersion relation of the electrons can be written as the
following (2.65) as
nz p
T36 E8QBHD ; gg ; nx ; ny
dz
3:78

n0D
nxmax nymax nzmax

XX
gv X
F1 g38HD
3:79

Dn0D
gv
F1 g38HD
dx dy dz
3:80
h2 nz p 2

2x6 dz
h2 nz p 2
a
h4 nz p 4
h2 nz p 2
1 ac3 EnzHD8 ; gg

2x3 dz
4x3 x6 dz
2m3 dz
c2 EnzHD8 ; gg ac3 EnzHD8 ; gg
3:81

J0D
nxmax nymax nzmax

XX

ea0 gv X
Dn0D vz8 EnzHD8
4 nx1 ny1 nz
3:82
min
where
1
h2 nz p 2
vz8 EnzHD8 c02 EnzHD8 ; gg ac03 EnzHD8 ; gg

h
2x6 dz
h2 nz p 2 1 h2 nz p
ah4 nz p 3
ac03 EnzHD8 ; gg

2x3 dz
m 3 dz
x 3 x 6 dz
h2 nz p
1 ac3 EnzHD8 ; gg
x 3 dz
206
In the absence of band tailing, the electron dispersion relation in this case can
be written following (2.71) as
nz p
T40 EQD11 ; nx ; ny
dz
3:83
where EQD11 is the totally quantized energy in this case.

In this case Enz and vz Enz are given by
h2 nz p 2
h2 nz p 2
1 aEnz

2x6 dz
2x3 dz
h4 nz p 4
h2 nz p 2

4x3 x6 dz
2m3 dz
3:84
nz p 3
h nz p
h
1 1 aEnz x3 dz a x3 x6 dz
2 n p 2
h 1 2aEnz ah z a h2 nz p2
3:85
Enz 1 aEnz aEnz
vz Enz
2x6
dz
2x3
dz
The electron concentration per band can be written as

Mn0D
gv
F1 g41
dx dy dz
3:86
where, g41 kB1T EF0D EQD11

The photo emitted current density is given by
J0D
nxmax nymax nzmax

XX

ea0 gv X
Dn0D vz Enz :
4 nx1 ny1 nz
3:87
min
(b) Bangert and Kastner Model

The electron dispersion relation in this case is given by following (2.77) as
nz p
dz
3:88

n0D
nxmax nymax nzmax

XX
gv X
F1 g39HD
3:89
207

Dn0D
gv
F1 g39HD
dx dy dz
3:90
F2 EnzHD9 ; gg
nz p 2
1
dz
3:91

J0D
nxmax nymax nzmax

XX

ea0 gv X
Dn0D vz9 EnzHD9
4 nx1 ny1 nz
3:92
min

where vz9 EnzHD9 2ndzzpF2 EnzHD9 ; gg hF20 EnzHD9 ; gg 1
In the absence of band-tails following (2.83) the dispersion relation is given by
nz p
T61 E12QD ; gg ; nx ; ny
dz
3:93
where E12QD is the totally quantized energy in this case.

n0D
nxmax nymax nzmax

XX
gv X
F1 g42
3:94
where g42 kB T 1 EF0D E12QD

Dn0D
gv
F1 g42
dx dy dz
3:95
The quantized energy along Z direction the Enz in this case is given by
x2 Enz
nz p 2
1
dz

J0D
nxmax nymax nzmax

XX
ea0 gv X
Dn0D vEnz
4 nx1 ny1 nz
min

where v Enz 2ndzzpx2 Enz ; gg hx02 Enz ; gg 1 :
3:96
208
3.2.5 The EP from QB of HD Stressed Kane Type

Semiconductors
The electron dispersion relation in this case is given by following (2.89) as
nz p
dz
3:97

n0D
nxmax nymax nzmax

XX
2gv X
F1 g40HD
3:98

Dn0D
gv
F1 g40HD
dx dy d z
3:99
S11 EnzHD10 ; gg
nz p 2
1
dz
3:100

J0D
nxmax nymax nzmax

XX

ea0 gv X
Dn0D vz10 EnzHD10
2 nx1 ny1 nz
3:101
min

where vz10 EnzHD10 2ndzzpS11 EnzHD10 ; gg hS011 EnzHD10 ; gg 1

In the absence of band-tails the vz Enz for QBs of stressed materials can be
written form (1.195) as
vz Enz

Q21 Enz
1
where Q21 Enz

0
h
c0 Enz
3:102
The Enz can be expressed through the equation

nz p
c0 Enz
dz
3:103
209
The totally quantized energy EQD23 in this case assumes the form
2
2
2
2
pnx
pny
pnz
a0 EQD23 2
b0 EQD23
c0 EQD23 2 1
dx
dy
dz
3:104
n0D
nxmax nX
ymax n
zmax
X
2gv X
F1 g53 where g53 kB T 1 EF0D EQD23 3:105
x
The photo-emitted current density can be written as

J0D
nxmax nX
ymax n
zmax
X

a0 egv X
Q21 Enz F1 g53
dx dy dz h n 1 n 1 n 1
x
3:106
where nzmin satises the following inequality

dz
c0 W hm :
nzmin
p
3.2.6 The EP from QB of HD Te

nx p
t72 E11QBHD ; ny ; nz ; gg
dx
3:107

n0D
nxmax nymax nzmax

XX
gv X
F1 g42HD
3:108

Dn0D
gv
F1 g42HD
dx dy d z
3:109
210
w6
nz p 2
nz p
w5HD EnzHD11 ; gg 2 w28HD EnzHD11 ; gg 2
dz
dz
3:111

J0D
nxmax nymax nzmax

XX

ea0 gv X
Dn0D vz11 EnzHD11
4 nx1 ny1 nz
3:112
min
where

hw05HD EnzHD11 ; gg w8HD EnzHD11 ; gg w08HD EnzHD11 ; gg w28HD EnzHD11 ; gg ndzzp2 1=2

vz11 EnzHD11 1

2w6 ndzzp ndzzpw28HD EnzHD11 ; gg ndzzp2 1=2

In the absence of doping vz Enz; in this case is given by

1

vz Enz; Q12 Enz;
h
3:113

q
2
z
z
where Q12 Enz; 2w1 ndzzp w3 in which Enz; w1 pn
pn
dz
dz w3
The totally quantized energy can be written as
" #
2
pnz
pnx 2
pny 2
EQD14; w1
w2
dz
dx
dy
"
" ##1=2
2
2
pnz
pnx
pny 2
w23
w24
dz
dx
dy
3:114

n0D
nxmax nX
ymax n
zmax
X

gv X
F1 g44;
x
3:115

where g44; EF0D EQD14; =kB T:
J0D
nxmax nX
ymax n
zmax

X

a0 egv X
Q12 Enz; F1 g44;
2hdx dy dz n 1 n 1 n 1
x
3:116
where nzmin can be determined from

W hm w1
pnzmin
dz
2
w3 :
p
:nz :
dz min
3:117
211
3.2.7 The EP from QB of HD Gallium Phosphide

nx p
u70 E14QBHD ; ny ; nz ; gg
dx
3:118

n0D
nxmax nymax nzmax

XX
gv X
F1 g44HD
3:119

Dn0D
gv
F1 g44HD
dx dy d z
3:120
t11 c3 EnzHD14 ; gg t21 t31
nz p 2
nz p
t41 2 t52 EnzHD14 ; gg 1=2 0
dz
dz
3:121

J0D
nxmax nymax nzmax

XX

ea0 gv X
Dn0D vz14 EnzHD14
4 nx1 ny1 nz
3:122
min

where vz14 EnzHD14
2t31 ndzzpt4 ndzzpndzzp2 t52 EnzHD14 ;gg 1=2

0
h t11 c3 EnzHD14 ;gg t4 t5 EnzHD14 ;gg t50 EnzHD14 ;gg ndzzp2 t52 EnzHD14 ;gg 1=2
In the absence of doping, the totally quantized energy EQD16 in this case can be
written as
EQD16
" #
" #
2
h
pnx 2
pny 2
h2
pnx 2
pny 2
pnz 2
2m?
dx
dy
2mjj
dx
dy
dz
"
" #
#1=2
h4 k02
pnx 2
pny 2
pnz 2
jVG j
jVG j2
d
d
d
m2
x
y
z
jj
3:123
212

The mz Enz and Enz can be respectively written as
vz Enz
2
6
10 Enz 61
where, Q
4

h pnz
Q10 Enz

mjj dz
3:124
91=2 3
=
2 >
7
h4 k02
pnz
7
jVG j2
2
d
5
z
>
>
;
:
mjj
8
>
<
2
h2 k0
mjj
#1=2
"

h2 pnz 2 h4 k02 pnz 2
and Enz
2
jVG j2
jVG j
2mjj dz
dz
mj j
3:125

n0D
nxmax nX
ymax n
zmax
X
2gv X
F1 g46
x
3:126

J0D
nxmax nX
ymax n
zmax
X

a0 phgv e X
10 Enz F1 g46
Q

2
dx dy dz mjj n 1 n 1 nz
x
3:127
min
where, nzmin is the nearest integer of the following equation

31=2
2

2
2
4 2
h

pnzmin
h k0 pnzmin 7
6
W hm
jVG j 4jVG j2
5 :
2
2mjj
dz
dz
mjj
2
3:128
3.2.8 The EP from QB of HD Platinum Antimonide

nx p
V70 E15QBHD ; ny ; nz ; gg
dx
3:129
213

n0D
nxmax nymax nzmax

XX
gv X
F1 g45HD
3:130

Dn0D
gv
F1 g45HD
dx dy d z
3:131
T41
nz p 4
nz p
T51 EnzHD15 ; gg 2 T61 EnzHD15 ; gg
dz
dz
3:132

J0D
nxmax nymax nzmax

XX

ea0 gv X
Dn0D vz15 EnzHD15
4 nx1 ny1 nz
3:133
min

where vz15 EnzHD15
4T41 ndzzp3 2T51 EnzHD15 ;gg ndzzp
nz p 2
0 E
0
h T51
nzHD15 ;gg dz T61 EnzHD15 ;gg
nx p
D71 EQD17 ; ny ; nz
dx
3:134
where EQD17 is the totally quantized energy in this case

n0D
nxmax nymax nzmax

XX
gv X
F1 g50
3:135
where g50 kB T 1 EF0D EQD17

Dn0D
gv
F1 g50
dx dy dz
3:136
214
The quantized energy along Z direction the Enz in this case is given by
Enz x2
nz p 2
nz p
nz p
Enz x4 2 d0 I1 4
dz
dz
dz
3:137

J0D
nxmax nymax nzmax

XX

ea0 gv X
Dn0D vz Enz
4 nx1 ny1 nz
3:138
min
4I1 ndzzp3 2ndzzpx4 Enz x2 ndzzp2 2ndzzpx2 Enz d0 x4 ndzzp2

:
where vz Enz
h2E d x x nz p2
nz
dz
3.2.9 The EP from QB of HD Bismuth Telluride

The dispersion relation in this case can be written following (2.128b) as
nx p
J70 E18QBHD ; ny ; nz ; gg
dx
3:139

n0D
nxmax nymax nzmax

XX
2gv X
F1 g48HD
3:140

Dn0D
2gv
F1 g48HD
dx dy d z
3:141
3
c2 EnzHD20 ; gg x
nz p 2
ny nz p 2
4
2x
dz
dy dz
3:142

J0D
nxmax nymax nzmax

XX

ea0 gv X
Dn0D vz20 EnzHD20

2 nx1 ny1 nz
min

np
where vz20 EnzHD20 2h c02 EnzHD20 ; gg 1 x3 ndzzp x4 dyy
3:143
215
The dispersion relation of the conduction electrons in Bi2Te3 in the absence of

doping can be written following (1.284) as
E 1 aE

h2
a11 kx2 a22 ky2 a33 kz2 2a23 ky kz
2m0
3:144
where a11; a22; a33 and a23 are spectrum constants.

The vz Enz is given by

vz Enz
pha33 nz

dz m0 1 2aEnz
3:145
in which Enz should be determined from the following equation

Enz 1 aEnz
2 !
pnz
a33
dz
h2
2m0
3:146
The totally quantized energy EQD33 can be written as

"
2
2
2
#
h2
nx p 2
ny p
nz p
p ny nz
EQD33 1 aEQD33
a11
a22
a33
2a23
dx
dy
dz
2m0
dy dz
3:147
The hole concentration is given by
p0D
nxmax nX
ymax n
zmax
X
2gv X
1
1 expg62 1 where g62
EF0D EQD33
kB T
x
3:148
The photo-emitted current density assumes the form
J0D
nxmax nX
ymax n
zmax
X
pa0 egv ha33 X
nz 1 expg62 1

m0 dx dy dz2 n 1 n 1 nz
1 2aEnz
x
3:149
min
where nzmin should be the nearest integer of the following equation

W hv1 aW hv
h2 a33
pnzmin =dz 2 :
2m0
3:150
216
3.2.10 The EP from QB of HD Germinium

The dispersion relation in accordance with this model in the present case can
nx p
L70 E20QBHD ; ny ; nz ; gg
dx
3:151

n0D
nxmax nymax nzmax

XX
2gv X
F1 g50HD
3:152

Dn0D
2gv
F1 g50HD
dx dy dz
3:153
0 c2 EnzHD22 ; gg a
h2 nz p 2 2
h2 nz p
1 2c3 EnzHD22 ; gg 2

2mk dz
2mk dz
3:154

J0D
nxmax nymax nzmax

XX

ea0 gv X
Dn0D vz22 EnzHD22
2 nx1 ny1 nz
3:155
min
where vz22 EnzHD22
1ac3 EnzHD22 ;gg mh andzzp3 mh 2

2
k
2
hc02 EnzHD22 ;gg ac03 EnzHD22 ;gg mh ndzzp2

k
In the absence of doping the totally quantized energy EQD30 in this case can be
written as
217

Eg0
h2 pnz 2

2
2mk dz
"
2 ( 2 2 )#1=2
Eg20
h
pnx
pny
Eg0

4
2m?
dx
dy
EQD30


h pnz
vz Enz
mjj dz

h2 pnz 2
Enz
2mjj dz
3:156
3:157
3:158

n0D
nxmax nX
ymax n
zmax
X
2gv X
F1 g42
x
3:159
where, g42 kB1T EF0D EQD30 in which EQD30 is determined from (3.156).
The EP is given by
J0D
nxmax nX
ymax n
zmax
X
a0 phgv e X
nz F1 g42

2
dx dy dz mjj nx 1 ny 1 nz
3:160
min
where, nzmin is the nearest integer of the following inequality

q

dz 2mk
W hm1=2 :
nzmin
p h
3:161
(b) Model of Wang and Ressler

The dispersion relation in accordance with this model in the present case can
nx p
b70 E24QBHD ; ny ; nz ; gg
dx
3:162

n0D
nxmax nymax nzmax

XX
2gv X
F1 g54HD
3:163
218

Dn0D
2gv
F1 g54HD
dx dy dz
3:164

a8
a9
nz p 2
nz p
nz p
a10 4 a11 2
a12 EnzHD24 ; gg 1=2 0 3:165
dz
dz
dz

J0D
nxmax nymax nzmax

XX

ea0 gv X
Dn0D vz24 EnzHD24

2 nx1 ny1 nz
3:166
min
where
vz24 EnzHD24
q
nz p
a9 ndzzp4
a11 ndzzp2
a10 ndzzp3
a10
a11 EnzHD24 ; gg 2
a11 ndzzp
1 2 dz
q

0
a10 a12 EnzHD24 ;gg
h

a nz p4
a nz p2
;g

a E
8
11 dz
dz
11
nzHD24
In the absence of doping, the totally quantized energy EQD40 in this case is
given by
EQD40
( )

2 2 ( 2 2 )2
2 pnz 2 h2
h
pnx 2
pny 2
h
pnx
pny

c1
2mjj dz
2m?
dx
dy
2m?
dx
dy
!
!2
2 ( 2 2 )
2
h
pnx
pny
h2
pnz
h2
pnz 4
d1

e
1
2m?
dx
dy
2mjj
dz
2mjj
dz
3:167


h nz p
Q11 Enz
vz Enz
mjj dz
2
6
2
where, Q11 Enz 41 e1 h 2
mjj
2
pnz
dz
3:168
3
7
5
!2

h2 pnz 2
h2

pnz 4
Enz
e1

2mjj dz
2mjj
dz
3:169
219

n0D
nxmax nX
ymax n
zmax
X
2gv X
F1 g50
x
3:170

J0D
nxmax nX
ymax n
zmax
X

a0 phgv e X
11 Enz F1 g50
Q

2
dx dy dz mk n 1 n 1 nz
x
3:171
min
where, nzmin is the nearest integer of the following inequality

!2

h2 pnzmin 2
h2
pnzmin 4

e
:
W hm
1
2mjj
dz
2mjj
dz
3:172
3.2.11 The EP from QB of HD Gallium Antimonide

(2.158) as
2 np 2
2 nz p=dz 2 h2 ny p=dy 2 h dxx
h
I36 E30QBHD ; gg
2mc
2mc
2mc
3:173

n0D
nxmax nymax nzmax

XX
2gv X
F1 g60HD
3:174

Dn0D
2gv
F1 g60HD
dx dy d z
3:175
220
h2 nz p 2
I36 EnzHD30 ; gg
2mc dz
3:176

J0D
nxmax nymax nzmax

XX

ea0 gv X
Dn0D vz30 EnzHD30
2 nx1 ny1 nz
3:177
min

where vz30 EnzHD30 dz mc I 0
36
hnz p
EnzHD30 ;gg
In the absence of band tails, the (1.337) can be written as

E a9 k 2

where a9
h2
2m0
and a10
2h2
Eg1
h
i
Eg1 hp2
1 a10 k 1
2
1
mc
3:178
i
m10 .
From (3.178), we get

E
a11 a12 E a13 1=2
a9

i
E2
2 h
4
Eg1
Eg1
10a29
4a9
8a9 a10
g1
2
8a2 a10 Eg1 , a12 a3 , a13 64a4 a10 E2 Eg1 .
k2
where a11
3:179
g1
The vz Enz in this case is given by

1

19 Enz
3:180
vz Enz Q
h
"
"
##

2 1=2

E
19 Enz 2a9 pnz g1 a10 pnz 1 a10 pnz
where Q
in which Enz
dz
2
dz
dz
should be determined from the following equation

Enz
2
3
"

2 #1=2
2nz p 4
a10 Eg1
pnz
5
1 a10
a9
dz
4
dz
3:181
221
The totally quantized energy EQD60 assumes the form

EQD60
" #
pnx 2
pny 2
pnz 2
a9
dx
dy
dz
2v
3
" #
u
2
2
2
Eg1 4u
pn
pn
pn
x
y
z
t1 a
15
10
2
dx
dy
dz
3:182

n0D
nxmax nX
ymax n
zmax
X
2gv X
F1 g70 where g70 EF0D EQD60 =kB T 3:183
dx dy dz n 1 n 1 nz
x
min
The photo-emitted current density can be written as

J0D
nxmax nX
ymax n
zmax
X

a0 egv X
19 Enz F1 g70
Q
hdx dy dz n 1 n 1 nz
x
3:184
min
where nzmin should be determined from the following equation

2
3
s

pnzmin 2 Eg1 4
pnzmin 2 5
:
1 1 a10
W hm a9
dz
2
dz
3:185

Using the appropriate equations, we have plotted the normalized EP from QBs of
HD CdGeAs2 as a function of lm thickness as shown in plot (a) of Fig. 3.1, where
the plot (b) indicates the case for d 0. The plots (c) and (d) represent the photoemission in this case in accordance with three band models of Kane. In Figs. 3.2
and 3.3, the aforementioned variable has been plotted as functions of normalized
incident photon energy and normalized electron degeneracy respectively for all
cases of Fig. 3.1. In Fig. 3.4, the normalized EP from QBs of HD n-InSb has been
plotted as a function of dz in accordance with the (a) three band model of Kane, (b)
two band model of Kane, the models of (c) Stillman et al. and (d) Palik et al.
respectively. The plots (eh) refer to QBs of HD GaAs in accordance with the said
models respectively in the same gure. In Figs. 3.5 and 3.6, the normalized EP for
all cases of Fig. 3.4 has been plotted as functions of normalized incident photon
energy and the normalized electron degeneracy respectively. The Fig. 3.7 exhibits
the normalized EP from QBs of HD CdS as a function of dz as shown in plot (a), in
which the plot (b) is valid for k0 0. The plot (c) in the same gure is valid for
222
Fig. 3.1 Plot of the normalized EP from QBs of HD CdGeAs2 as a function of dz in accordance
with a generalized band model b d 0, c the three-band model of Kane and d the two band model
of Kane
Fig. 3.2 Plot of the normalized EP from QBs of HD CdGeAs2 as a function of normalized
incident photon energy for all the cases of Fig. 3.1
223
Fig. 3.3 Plot of the normalized EP from QBs of HD CdGeAs2 as a function of normalized
electron degeneracy for all the cases of Fig. 3.1
Fig. 3.4 Plot of the normalized EP as a function of dz from QBs of HD n-InSb in accordance with
the a three band model of Kane, b two band model of Kane, c model of Stillman et al. and d model
of Palik et al. respectively. The plots eh refer to QBs of HD GaAs in accordance with the said
models
224
Fig. 3.5 Plot of the normalized EP from QBs of HD n-InSb and HD n-GaAs as a function of
normalized incident photon energy for all the cases of Fig. 3.4
Fig. 3.6 Plot of the normalized EP from QBs of HD n-InSb and HD n-GaAs as a function of
normalized electron degeneracy for all the cases of Fig. 3.4
225
Fig. 3.7 Plot of the normalized EP from QBs of a HD CdS with

k0 6 0, b
k0 0 respectively and
c HD GaP as a function of dz

k0 6 0, b
c HD GaP as a function of normalized incident photon energy
226

k0 6 0, b
c HD GaP as a function of normalized electron degeneracy
QBs of HD GaP respectively. In Figs. 3.8 and 3.9, the aforementioned variable has
been plotted as functions of normalized incident photon energy and normalized
electron degeneracy respectively for all cases of Fig. 3.7.
The Fig. 3.10 exhibits the plot of the normalized EP as a function of lm
thickness from QBs of HD n-Ge in accordance with the models of (a) Cardona et al.
and (b) Wang et al. respectively. The curve (c) in the same gure refers to the EP
from QBs of HD Tellurium in accordance with the models of Bouat et al. The
curves (d) and (e) refer to Te for two different values of temperature. In Figs. 3.11
and 3.12, the normalized EP has been plotted as functions of normalized incident
photon energy and normalized electron degeneracy respectively for all cases of
Fig. 3.10. In Fig. 3.13, we have drawn the plots of the normalized EP as a function
of lm thickness from HD QBs of (a) n-PtSb2 (b) zerogap materials, taking HgTe as
an example and (c) Pb1xGexTe. In Figs. 3.14 and 3.15, the normalized EP in this
case has been plotted as functions of normalized incident photon energy and normalized carrier degeneracy respectively for all cases of Fig. 3.13. In Fig. 3.16, we
have drawn the plots of the normalized EP as a function of lm thickness from QBs
of HD GaSb in accordance with the model of Mathur et al. for three different values
of temperature respectively. The curve (d) in the same gure refers to the QBs of
HD stressed materials, where stressed n-InSb has been considered as an example. In
Figs. 3.17 and 3.18, the normalized EP in this case has been plotted as functions of
227
Fig. 3.10 Plot of the normalized EP from HD QBs of a n-Ge in accordance with the model of
Cardona et al. b n-Ge in accordance with the model of Wang et al. as a function of lm thickness
The curve c refers to the same plot for HD QBs of Tellurium in accordance with the model of
Bouat et al. The curves d and e exhibit the same dependence for Te for two different temperatures
Fig. 3.11 Plot of the normalized EP as a function of normalized incident photon energy for all the
cases of Fig. 3.10
228
Fig. 3.12 Plot of the normalized EP as a function of normalized electron degeneracy for all the
cases of Fig. 3.10
Fig. 3.13 Plot of the normalized EP from HD QBs of a PtSb2, b HgTe and c Pb1xGexTe as a
function of lm thickness
229
function of normalized incident photon energy
function of normalized carrier degeneracy
230
Fig. 3.16 Plot of the normalized EP from HD QBs of GaSb in accordance with the model of
Mathur et al. for three different values of temperature as a function of lm thickness. The plot
d refers to QBs of HD stressed InSb
cases of Fig. 3.16
231
cases of Fig. 3.16
normalized incident photon energy and the normalized electron degeneracy

respectively for all cases of Fig. 3.16.
The Fig. 3.19 exhibits the plot of the normalized EP as a function of lm
thickness from QBs of HD PbSe in accordance with the models of (a) Dimmock,
(b) the Cohen, (c) Bangert et al. and (d) the Lax respectively. In Figs. 3.20 and 3.21,
the same variable has been plotted as functions of normalized incident photon
energy and normalized electron degeneracy respectively for all cases of Fig. 3.19.
The Fig. 3.22 depicts the plot of the normalized EP as a function of lm thickness
from QBs of IV-VI materials taking HD n-PbTe as an example in accordance with
the models of (a) Dimmock (b) Cohen, (c) Bangert et al. (d) Lax respectively.
Besides, the plot (e) of Fig. 3.22 exhibits the EP from QBs of II-V materials taking
HD CdSb as an example. In Figs. 3.23 and 3.24, the normalized EP in this case has
been plotted as functions of normalized incident photon energy and normalized
carrier degeneracy respectively for all cases of Fig. 3.22.
The Fig. 3.25 shows the plot of the normalized EP as a function of lm thickness
from QBs of HD Bi2Te3 for two different temperatures respectively. In Figs. 3.26
and 3.27, the normalized EP in this case has been plotted as functions of normalized
incident photon energy and normalized carrier degeneracy respectively for all cases
of Fig. 3.25.
It appears from the Figs. 3.1, 3.4, 3.7, 3.10, 3.13, 3.16, 3.19, 3.22 and 3.25 that
the normalized EP increases with decreasing lm thickness and exhibits spikes for
various values of dz which are totally band structure dependent. The Figs. 3.2, 3.5,
3.8, 3.11, 3.14, 3.17, 3.20, 3.23 and 3.26 exhibit the step-functional dependence of
the normalized EP from the HD QBs of different materials with the incident photon
232
Fig. 3.19 Plot of the normalized EP as a function of lm thickness from QBs of HD PbSe in
accordance with the models of a Dimmock and b the Cohen, c Bangert et al. and d the Lax
respectively
cases of Fig. 3.19
233
cases of Fig. 3.19
Fig. 3.22 Plot of the normalized EP from QBs of HD PbTe in accordance with the models of
a Dimmock, b Cohen, c Bangert et al. and d Lax respectively as a function of lm thickness. The
plot e refers to QBs of HD CdSb
234
cases of Fig. 3.22
Fig. 3.24 Plot of the normalized EP as a function of normalized carrier degeneracy for all the
cases Fig. 3.22
235
Fig. 3.25 Plot of the normalized EP from QBs of HD Bi2Te3 for two different temperatures as a
236
function of normalized carrier degeneracy
energy. It is apparent from the Figs. 3.3, 3.6, 3.9, 3.12, 3.15, 3.18, 3.21, 3.24 and
3.27 that the normalized EP from the HD QBs of various materials increases with
increasing normalized carrier degeneracy and exhibits spikes for different values of
carrier concentration which are again band structure dependent. It may be noted that
the HD QBs lead to the discrete energy levels, somewhat like atomic energy levels,
which produce very large changes. This follows from the inherent nature of the
quantum connement of the carrier gas dealt with here. In QBs, there remain no
free carrier states in between any two allowed sets of size-quantized levels unlike
that found for QWs and NWs where the quantum connements are 1D and 2D,
respectively. Consequently, the crossing of the Fermi level by the size-quantized
levels in HD QBs would have much greater impact on the redistribution of the
carriers among the allowed levels, as compared to that found for QWs and NWs
respectively. Although the EP varies in various manners with all the variables in all
the limiting cases as evident from all the gures, the rates of variations are totally
band-structure dependent. The quantum signature of HD QBs for the EP is rather
prominent as compared to the same from QWs and NWs.
The photoemission from HD QWs, NWs and QBs will further be investigated in
details in Chaps. 1 and 2 and this chapter in the presence of external photoexcitation with the realization that it is the band structure which changes in a
fundamental way and consequently alters the photoemission together with the fact
that in general all the physical properties of all the electronic materials changes
radically leading to new physical concepts.
237

(R:3:1) Investigate the EP for bulk specimens of the HDS under non uniform
strain in the presences of Gaussian, exponential, Kane, Halperian, Lax
and Bonch-Burevich types of band tails for all systems whose unperturbed carrier energy spectra are dened in R.1.1.
(R:3:2) Investigate the EP for QBs of all the HD semiconductors as considered
in R.3.1.
(R:3:3) Investigate the EP in the presence of non uniform strain for HD bulk
specimens of the negative refractive index, organic, magnetic and other
advanced optical materials in the presence of an arbitrarily oriented
(R:3:4) Investigate the EP for the QBs of HD negative refractive index, organic,
(R:3:5) Investigate the EP for the multiple QBs of HD materials whose unperturbed carrier energy spectra are dened in R.1.1.
(R:3:6) Investigate the EP for all the appropriate HD zero dimensional systems
(R:3:7) Investigate the EP for all the appropriate HD zero dimensional systems
(R:3:8) Investigate the EP for all the appropriate HD totally quantized systems of
this chapter forming quantum rings.
of elliptical Hill and quantum square rings in the presence of strain.
(R:3:10) Investigate the EP for parabolic cylindrical HD low dimensional systems
in the presence of an arbitrarily oriented alternating electric eld for all
the HD materials whose unperturbed carrier energy spectra are dened in
R.1.1 in the presence of strain.
(R:3:11) Investigate the EP for HD zero dimensional systems of the negative
waves and in the presence of strain.
(R:3:12) Investigate the EP for triangular HD zero dimensional systems of the
alternating magnetic eld.
238
elds.
(R:3:18) Investigate the EP for HD QBs of the negative refractive index, organic
and magnetic materials.
and magnetic materials in the presence of alternating time dependent
magnetic eld.
and magnetic materials in the presence of in the presence of crossed
alternating electric eld and alternating quantizing magnetic elds.
(R:3:21) (a) Investigate the EP for HD QBs of the negative refractive index,
organic, magnetic and other advanced optical materials in the presence
of an arbitrarily oriented alternating electric eld considering many body
effects.
(b) Investigate all the appropriate problems of this chapter for a Dirac
electron.
(R:3:23) Investigate all the appropriate problems of this chapter by removing all
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J. Mater. Chem. 18, 675 (2008)
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Y. Watanabe, K. Inoue, H. Ishikawa, K. Asakawa, Opt. Express 12, 6606 (2004)
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(2007)
Chapter 4
The EP from Heavily Doped (HD)

Quantized Superlattices
4.1 Introduction
In recent years, modern fabrication techniques have generated altogether a new
dimension in the arena of quantum effect devices through the experimental realization of an important articial structure known as semiconductor superlattice (SL)
by growing two similar but different semiconducting compounds in alternate layers
with nite thicknesses [133]. The materials forming the alternate layers have the
same kind of band structure but different energy gaps. The concept of SL was
developed for the rst time by Keldysh [3438] SL and was successfully fabricated
by Esaki and Tsu [3438]. The SLs are being extensively used in thermal sensors
[39, 40], quantum cascade lasers [4143], photodetectors [44, 45], light emitting
diodes [4649], multiplication [50], frequency multiplication [51], photocathodes
[52, 53], thin lm transistor [54], solar cells [55, 56], infrared imaging [57], thermal
imaging [58, 59], infrared sensing [60] and also in other microelectronic devices.
The most extensively studied III-V SL is the one consisting of alternate layers of
GaAs and Ga1xAlxAs owing to the relative easiness of fabrication. The GaAs and
Ga1xAlxAs layers form the quantum wells and the potential barriers respectively.
The III-V SLs are attractive for the realization of high speed electronic and optoelectronic devices [61]. In addition to SLs with usual structure, other types of SLs
such as II-VI [62], IV-VI [63] and HgTe/CdTe [64] SLs have also been investigated
in the literature. The IV-VI SLs exhibit quite different properties as compared to the
III-V SL due to the specic band structure of the constituent materials [65]. The
epitaxial growth of II-VI SL is a relatively recent development and the primary
motivation for studying the mentioned SLs made of materials with the large band
gap is in their potential for optoelectronic operation in the blue [65]. HgTe/CdTe
SLs have raised a great deal of attention since 1979, when as a promising new
materials for long wavelength infrared detectors and other electro-optical applications [66]. Interest in Hg-based SLs has been further increased as new properties
with potential device applications were revealed [66, 67]. These features arise from
DOI 10.1007/978-3-319-11188-9_4
241
242
4 The EP from Heavily Doped (HD) Quantized Superlattices
the unique zero band gap material HgTe [68] and the direct band gap semiconductor
CdTe which can be described by the three band mode of Kane [69]. The combination
of the aforementioned materials with specied dispersion relation makes HgTe/
CdTe SL very attractive, especially because of the tailoring of the material properties
for various applications by varying the energy band constants of the SLs.
We note that all the aforementioned SLs have been proposed with the
assumption that the interfaces between the layers are sharply dened, of zero
thickness, i.e., devoid of any interface effects. The SL potential distribution may be
then considered as a one dimensional array of rectangular potential wells. The
aforementioned advanced experimental techniques may produce SLs with physical
interfaces between the two materials crystallographically abrupt; adjoining their
interface will change at least on an atomic scale. As the potential form changes from
a well (barrier) to a barrier (well), an intermediate potential region exists for the
electrons [70]. The influence of nite thickness of the interfaces on the electron
dispersion law is very important, since; the electron energy spectrum governs the
electron transport in SLs. In addition to it, for effective mass SLs, the electronic
subbands appear continually in real space [71].
In this chapter, the magneto EP from III-V, II-VI, IV-VI, HgTe/CdTe and
strained layer quantum well heavily doped superlattices (QWHDSLs) with graded
interfaces has been studied in Sects. 4.2.14.2.5. From Sects. 4.2.64.2.10, the
magneto EP from III-V, II-VI, IV-VI, HgTe/CdTe and strained layer quantum well
heavily doped effective mass superlattices respectively has been presented. In
Sects. 4.2.114.2.20, the same from the quantum dots of the aforementioned
heavily doped SLs has been investigated. Section 4.3 contains the result and discussions pertinent to this chapter. The last Sect. 4.4 presents open research
problems.

Superlattices with Graded Interfaces
The electron dispersion law in bulk specimens of the heavily doped constituent
materials of III-V SLs whose un-doped energy band structures are dened by three
band model of Kane can be expressed as
h2 k2
T1j E; Dj ; Egj ; ggj iT2j E; Dj ; Egj ; ggj
2mcj
4:1
243
where
j = 1,2, Tij E; Dj ; Egj ; ggi 2=1 Erf E=ggi aj bj =cj h0 E; ggj
aj cj bj cj aj bj =c2j c0 E; ggj
1
1=cj 1 aj =cj 1 bj =cj 1 Erf E=ggj
2
p
1=cj 1 aj =cj 1 bj =cj 2=cj ggj p expu2j
1
X
expp2 =4=p sinhpuj ;
p1
2
1 cj E
bj Egj Dj 1 ; cj Egj Dj 1 ; uj
and
3
cj ggj
!

p
p
2
1
aj
bj
1
expu2j :
T2j E; Dj ; Egj ; ggj
1
1 Erf E=ggj cj
cj
cj cj ggj
Therefore, the dispersion law of the electrons of heavily doped quantum well
III-V SLs with graded interfaces can be expressed as [71]
kz2 G8 iH8
where G8
C72 D27
L20
4:2
q 1
i
1
ks2 ; C7 cos1 x7 ; x7 2 2 1 G27 H72 1 G27 H72 2 4G27 2
a20
a21
"s
#2 2
Ms2 0; gg2
1 44
Ms1 0; gg1
"s
#2 2
Ms2 0; gg2
1 44
Ms1 0; gg1
Ms2 0; gg2
Ms1 0; gg1
Ms2 0; gg2
Ms1 0; gg1
!1=2 31
5 ;
!1=2 31
5
C40 E; kx ; ky ; gg1 1 P1 E; gg1 kx2 Q1 E; gg1 ky2 1=2 S1 E; gg1 1=2

D40 E; kx ; ky ; gg2 1 P2 E; gg2 kx2 Q2 E; gg2 ky2 1=2 S2 E; gg2 1=2
G7 G1 q5 G2 =2 q6 H2 =2 D0 =2fq6 H2 q8 H3 q9 H4 q10 H4
q11 H5 q12 H5 1=12q12 G6 q14 H6 g;
G1 cosh1 coshh2 coshg1 cosg2
1
sinh1 sinhh2 sinhg1 sing2 ; h1 e1 b0 D0 ; e1 2 2
q
1
t12 t22 t1 2
244
t1 2mc1 =h2 T11 E; Eg1 ; D1 ; gg1 ks2 ; t2 2mc1 =h2 T21 E; Eg1 ; D1 ; gg1 ;
q
q
1
1
1
1
h2 e2 b0 D0 ; e2 2 2 t12 t22 t1 2 ; g1 d1 a0 D0 ; d1 2 2 x21 y21 x1 2 ;
x1 2mc2 =h2 T11 E V0 ; Eg2 ; D2 ; gg2 ks2 ; y1 2mc2 =h2 T22 E V0 ; Eg2 ; D2 ; gg2 ;
q
1
1
g2 d2 a0 D0 ; d2 2 2 x21 y22 x1 2 ; q5 q23 q24 1 q1 q3 q2 q4 ;
q1 d12 e22 d22 e21 ; q3 d1 e1 d2 e2 ; q2 2d1 d2 e1 e2 ; q4 d1 e2 e1 d2 ;
G2 sinh1 coshh2 sinhg1 cosg2 cosh1 sinhh2 coshg1 sing2 ;
q6 q23 q24 1 q1 q4 q2 q3 ;
H2 sinh1 coshh2 sing2 coshg1 cosh1 sinhh2 sinhg1 cosg2 ;

q7 e21 e22 1 e1 d12 d22 2d1 d2 e2 3e1 ;
G3 sinh1 coshh2 sing1 cosg2 cosh1 sinhh2 sinhg1 sing2 ;
q8 e21 e22 1 e1 d12 d22 2d1 d2 e2 3e1 ;
H3 sinh1 coshh2 sing2 sinhg1 cosh1 sinhh2 coshg1 cosg2 ;

q9 d12 d22 1 d1 e22 e21 2e2 d2 e1 3d1 ;
G4 cosh1 coshh2 cosg2 sing1 sinh1 sinhh2 coshg1 sing2 ;
q10 d12 d22 1 d2 e22 e21 2e2 d2 e1 3d2 ;
H4 cosh1 coshh2 coshg1 sing2 sinh1 sinhh2 sinhg1 cosg2 ;
q11
G5
q12
H5
2d12 e22 d22 e21 ;

cosh1 coshh2 cosg2 coshg1 sinh1 sinhh2 sinhg1 sing2 ;
4d1 d2 e1 e2 ;
cosh1 coshh2 sinhg1 sing2 sinh1 sinhh2 coshg1 cosg2 ;
q13 f5d1 e31 3e1 e22 d1 5d2 e31 3e21 e2 gd12 d22 1 e21 e22 1 f5e1 d13 3d2 e21 d1
5d23 e2 3d12 d2 e2 g 34d1 e1 d2 e2 ;
G6 sinhh1 coshh2 sinhg1 cosg2 cosh1 sinhh2 coshg1 sing2 ;
q14 f5d1 e32 3e1 e21 d1 5d2 e31 3e22 e1 gd12 d22 1 e21 e22 1 f5e1 d23 3d12 d2 e1
5d13 e2 3d22 d1 e2 g 34d1 e2 d2 e1 ;
H6 sinh1 coshh2 coshg1 sing2 cosh1 sinhh2 sinhg1 cosg2 ;

H7 H1 q5 H2 =2 q6 G2 =2 D0 =2fq8 G3 q7 H3 q10 G4 q9 H4
q12 G5 q11 H5 1=12q14 G6 q13 H6 g;
H1 sinh1 sinhh2 coshg1 cosg2 cosh1 coshh2 sinhg1 sing2 ;
D7 sinh1 x7 ; H8 2C7 D7 =L20
245
The simplied dispersion relation of heavily doped quantum well III-V superlattices with graded interfaces under magnetic quantization can be expressed as
kz2 G8E;n iH8E;n
4:3
where
"
G8E;n
2
C7E;n
D27E;n
L20
1

#
2eB
1
n

; C7E;n cos1 x7E;n ;
h
2

2
x7E;n 2 2 1 G27E;n H7E;n
q 1
2 2 4G2 2
1 G27E;n H7E;n
7E;n
G7E;n G1E;n q5E;n G2E;n =2 q6E;n H2E;n =2

D0 =2fq6E;n H2E;n q8E;n H3E;n q9E;n H4E;n q10E;n H4E;n
q11E;n H5E;n q12E;n H5E;n 1=12q12E;n G6E;n q14E;n H6E;n g;
G1E;n cosh1E;n coshh2E;n coshg1E;n cosg2E;n
h1E;n
t1E;n
sinh1E;n sinhh2E;n sinhg1E;n sing2E;n ;

q
1
1
2
e1E;n b0 D0 ; e1E;n 2 2 t1E;n
t22 t1E;n 2 ;

2eB
1
n
;
2mc1 =h2 :T11 E; Eg1 ; D1 gg1
h
2
t2 2mc1 =h2 T21 E; Eg1 ; D1 ; gg1 ;

q
1
1
2
t22 t1E;n 2 ;
h2E;n e2E;n b0 D0 ; e2E;n 2 2 t1E;n
q
1
1
g1E;n d1E;n a0 D0 ; d1E;n 2 2 x21E;n y21 x1E;n 2 ;

2eB
1
n
;
x1E;n 2mc2 =h2 11 E V0 ; Eg2 ; D2 ; gg2
h
2
y1 2mc2 =h2 T22 E V0 ; Eg2 ; D2 ; gg2 ;
q
1
1
g2E;n d2E;n a0 D0 ; d2E;n 2 2 x21E;n y21 x1E;n 2 ;
q5E;n q23E;n q24E;n 1 q1E;n q3E;n q2E;n q4E;n ;
2
2
e22E;n d2E;n
e21E;n ; q3E;n d1E;n e1E;n d2E;n e2E;n ;
q1E;n d1E;n
q2E;n 2d1E;n d2E;n e1E;n e2E;n ; q4E;n d1E;n e2E;n e1E;n d2E;n ;
G2E;n sinh1E;n coshh2E;n sinhg1E;n cosg2E;n
cosh1E;n sinhh2E;n coshg1E;n sing2E;n ;
q6E;n q23E;n q24E;n 1 q1E;n q4E;n q2E;n q3E;n ;
246
H2E;n sinh1E;n coshh2E;n sing2E;n cosg1E;n

cosh1E;n sinhh2E;n sinhg1E;n cosg2E;n ;
2
2
d2E;n
2d1E;n d2E;n e2E;n 3e1E;n ;
q7E;n e21E;n e22E;n 1 e1E;n d1E;n
G3E;n sinh1E;n coshh2E;n coshg1E;n cosg2E;n

cosh1E;n sinhh2E;n sinhg1E;n sing2E;n ;
2
2
d2E;n
2d1E;n d2E;n e1E;n 3e2E;n ;
q8E;n e21E;n e22E;n 1 e2E;n d1E;n
H3E;n sinh1E;n coshh2E;n sing2E;n sinhg1E;n

cosh1E;n sinhh2E;n coshg1E;n cosg2E;n ;
2
2
d2E;n
1 d1E;n e22E;n e21E;n 2e2E;n d2E;n e1E;n 3d1E;n ;
q9E;n d1E;n
G4E;n cosh1E;n coshh2E;n cosg2E;n sinhg1E;n

sinh1E;n sinhh2E;n coshg1E;n sing2E;n ;
2
2
d2E;n
1 d2E;n e22E;n e21E;n 2e2E;n d2E;n e1E;n 3d2E;n ;
q10E;n d1E;n
H4E;n cosh1E;n coshh2E;n coshg1E;n sing2E;n

sinh1E;n sinhh2E;n sinhg1E;n cosg2E;n ;
2
2
q11E;n 2d1E;n
e22E;n d2E;n
e21E;n ;
G5E;n cosh1E;n coshh2E;n cosg2E;n coshg1E;n

q12E;n
sinh1E;n sinhh2E;n sinhg1E;n sing2E;n ;

4d1E;n d2E;n e1E;n e2E;n ;
H5E;n cosh1E;n coshh2E;n sinhg1E;n sing2E;n

sinh1E;n sinhh2E;n coshg1 cosg2 ;
q13E;n f5d1E;n e31E;n 3e1E;n e22E;n d1E;n
2
2
d2E;n
1
5d2E;n e21E;n 3e21E;n e2E;n gd1E;n
3
e21E;n e22E;n 1 f5e1E;n d1E;n
3d2E;n e21E;n d1E;n
3
2
5d2E;n
e2E;n 3d1E;n
d2E;n e2E;n g 34d1E;n e1E;n d2E;n e2E;n ;
G6E;n sinh1E;n coshh2E;n sinhg1E;n cosg2E;n

cosh1E;n sinhh2E;n coshg1 sing2 ;
q14E;n f5d1E;n e32E;n 3e2E;n e21E;n d1E;n
2
2
d2E;n
1 ;
5d2E;n e31E;n 3e22E;n e1E;n gd1E;n
3
2
3d1E;n
d2E;n e1E;n
e21E;n e22E;n 1 f5e1E;n d2E;n
3
2
5d1E;n
e2E;n 3d2E;n
d1E;n e2E;n g
34d1E;n e2E;n d2E;n e1E;n ;
247
H6E;n sinh1E;n coshh2E;n coshg1E;n sing2E;n

H7E;n
cosh1E;n sinhh2E;n sinhg1E;n cosg2E;n ;

H1E;n q5E;n H2E;n =2 q6E;n G2E;n =2
D0 =2fq8E;n G3E;n q7E;n H3E;n q10E;n G4E;n q9E;n H4E;n
q12E;n G5E;n q11E;n H5E;n 1=12q14E;n G6E;n q13E;n H6E;n g;
H1E;n sinh1E;n sinhh2E;n coshg1E;n cosg2E;n

cosh1E;n coshh2E;n sinhg1E;n sing2E;n ;
D7E;n sinh1 x7E;n ; H8E;n 2C7E;n D7E;n =L20
The dispersion relation in heavily doped quantum well III-V superlattices under
magnetic quantization assumes the form
nz p 2
G8E41;n iH8E41;n
dz
4:4
where E41;n is the totally quantized energy in this case.

n0SL
nmax nX
zmax
X
eBgv
Real part of
F1 g41
ph
n0 n 1
4:5
where g41 kB T1 EFSL E41;n and EFSL is the Fermi energy in this case.
The EP in this case(JSL ) is given by
JSL
nmax nX
zmax
X
a0 e2 Bgv
Real part of
F1 g41 vz1 EnzSL1
2phdz
n0 nzmin
4:6a
where
vz1 EnzSL1
2pnz

hdz G08 iH08 kx 0;ky 0;kz nz p and EEnzSL1
4:6b
dz
EnzSL1 is the quantized energy along z direction and is obtained by substituting

kx 0; ky 0; kz ndzzp and E EnzSL1 in (4.2) and the primes denote the differentiation with respect to energy.
248

The electron energy spectra of the heavily doped constituent materials of II-VI SLs
are given by
c3 E; gg1
h2 k2
h2 ks2
z C0 ks

2m?;1 2mk;1
4:7
and
2 k 2
h
T12 E; D2 ; Eg2 ; gg2 iT22 E; D2 ; Eg2 ; gg2
2mc2
4:8
where m?;1 and mjj;1 are the transverse and longitudinal effective electron masses
respectively at the edge of the conduction band for the rst material. The energywave vector dispersion relation of the conduction electrons in heavily doped
quantum well II-VI SLs with graded interfaces can be expressed as
kz2 G19 iH19
4:9
where

G19
1

2
C18
D218
2
ks ;
L20
2

C18 cos1 x18 ; x18 2 2 1 G218 H18
q
1
2 2 4G2 2 ;
1 G218 H18
18
1
G18 G11 G12 D0 G13 G14 D0 G15 G16 ;
2
G11 2cosg1 cosg2 cos c11 E; ks
c11 E; ks k21 E; ks b0 D; k21 E; ks fc3 E; gg1
2mk;1
2 ks2
h
C0 ks 2 g1=2 ;
2m?;1
h
G12 X1 E; ks sinh g1 cos g2 X2 E; ks sin g2 cosh g1 sin c11 E; ks

d1
k21 E; ks d1
d
k21 E; ks d2
and X2 E; ks

X1 E; ks
k21 E; ks
k21 E; ks
d12 d22
d12 d22
G13 X3 E; ks cosh g1 cos g2 X4 E; ks sinh g1 sin g2 sin c11 E; ks
X3 E; ks
d12 d21
2d1 d2
3k21 E; ks ; X4 E; ks

k21 E; ks
k21 E; ks
249
G14 X5 E; ks sinh g1 cos g2 X6 E; ks sin g1 cosh g2 cos c11 E; ks :

d1
d2
X5 E; k5 3d1 2
k 2 E; ks ; X6 E; ks 3d2 2
k 2 E; ks
d1 d22 21
d1 d22 21
G15 X9 E; ks cosh g1 cos g2 X10 E; ks sinh g1 sin g2 cos c11 E; ks
2
E; ks ; X10 E; ks 2d1 d2
X9 E; k5 2d12 2d22 k21
G16 X7 E; ks sinh g1 cos g2 X8 E; ks sin g1 cosh g2 sin c11 E; ks =12;

X7 E; ks
X8 E; ks
5d1
5d13 3d22 d1
3
34k21 E; ks d1 ;
k21
E; ks
2
k21 E; ks
d2
d12
5d2
5d23 3d22 d1
3
34k21 E; ks d2 ;
k21
E; ks
2
k21 E; ks
d2
d12
1
H18 H11 H12 D0 H13 H14 D0 H15 H16 ;
2
H11 2sinh g1 sin g2 cos c11 E; ks ;
H12 X2 E; ks sinh g1 cos g2 X1 E; ks sin g2 cosh g1 sin c11 E; ks ;
H13 X4 E; ks cosh g1 cos g2 X3 E; ks sinh g1 sin g2 sin c11 E; ks ;
H14 X6 E; ks sinh g1 cos g2 X5 E; ks sin g1 cosh g2 cos c11 E; ks ;
H15 X10 E; ks cosh g1 cos g2 X9 E; ks sinh g1 sin g2 cos c11 E; ks ;
H16 X8 E; ks sinh g1 cos g2 X7 E; ks sin g1 cosh g2 sin c11 E; ks =12;

2C18 D18
H19
and D18 sinh1 x18
L20
The simplied dispersion relation in heavily doped quantum well II-VI superlattices with graded interfaces under magnetic quantization can be expressed as
kz2 G19E;n iH19E;n
"
where G19E;n
2
C18E;n
D218E;n
L20
4:10

#
2eB
1
n ;

h
2
1
C18E;n cos1 x18E;n ; x18E;n 2 2 1 G218E;n H18E;n

q 1
2
1 G218E;n H18E;n
2 4G2180D 2 ;
1
G18E;n G11E;n G12E;n D0 G13E;n G14E;n D0 G15E;n G16E;n ;
2
G11E;n 2cosg1E;n cosg2E;n cos c11 E; n; c11 E; n k21 E; nb0 D0 ;

h2
2eB
1
2eB
1 1=2 2mjj;1 1=2
2 g ;
k21 E; n fc3 E; gg1
n
n
C0
2m?;1 h
2
h
2
h
250
G12E;n X1 E; nsinh g1E;n cos g2E;n

X2 E; nsin g2E;n cosh g1E;n sin c11 E; n
d1E;n
k21 E; nd1E;n
2
;
X1 E; n
2
k21 E; n d1E;n
d2E;n
X2 E; n
d2E;n
k21 E; nd2E;n
2
;
2
k21 E; n d1E;n
d2E;n
G13E;n X3 E; ncosh g1E;n cos g2E;n

X4 E; nsinh g1E;n sin g2E;n sin c11 E; n
2
1
d1E;n
d2E;n
2d1E;n d2E;n
X3 E; n
3k21 E; n; X4 E; n

k21 E; n
k21 E; n

X6 E; nsin g1E;n cosh g2E;n cos c11 E; n:
d1E;n
2
X5 E; n 3d1E;n 2
k21
E; n;
2
d1E;n d2E;n
d2E;n
2
X6 E; n 3d2E;n 2
k21
E; n
2
d1E;n d2E;n
G15E;n X9 E; ncosh g1E;n cos g2E;n
X10 E; nsinh g1E;n sin g2E;n cos c11 E; n
2
2
2
2d2E;n
k21
E; n; X10 E; n 2d1E;n d2E;n
X9 E; n 2d1E;n

X8 E; nsin g1E;n cosh g2E;n sin c11 E; n=12;
3
2
5d1E;n
3d2E;n
d1E;n
5d1E;n
3
X7 E; n 2
34k21 E; nd1E;n ;
k
E;
n
21
2
k21 E; n
d1E;n d2E;n
3
2
5d2E;n
3d2E;n
d1E;n
5d2E;n
3
34k21 E; nd2E;n
k
E;
n
X8 E; n 2
21
2
k21 E; n
d1E;n d2E;n
1
H18E;n H11E;n H12E;n D0 H13E;n H14E;n D0 H15E;n H16E;n ;
2
251
H11E;n 2sinh g1E;n sin g2E;n cos c11 E; n;

H12E;n X2 E; nsinh g1E;n cos g2E;n
X1 E; nsin g2E;n cosh g1E;n sin c11 E; n;
H13E;n X4 E; ncosh g1E;n cos g2E;n
X3 E; nsinh g1E;n sin g2E;n sin c11 E; n;
H14E;n X6 E; nsinh g1E;n cos g2E;n
X5 E; nsin g1E;n cosh g2E;n cos c11 E; n;
H15E;n X10 E; ncosh g1E;n cos g2E;n
H16E;n
H19E;n
X9 E; nsinh g1E;n sin g2E;n cos c11 E; n;

X8 E; nsinh g1E;n cos g2E;n
X7 E; nsin g1E;n cosh g2E;n sin c11 E; n=12;

2C18E;n D18E;n
and D18E;n sinh1 x18E;n

L20
The dispersion relation in quantum well heavily doped II-VI superlattices under
nz p 2
G19E42;n iH19E42;n
dz
4:11

n0SL
nmax nX
zmax
X
eBgv
Real part of
F1 g42
ph
n0 n 1
4:12
JSL
nmax nX
zmax
X
a0 e2 Bgv
Real part of
F1 g42 vz2 EnzSL2
2phdz
n0 nzmin
4:13a
where
vz2 EnzSL2
2pnz

hdz G019 iH019 kx 0;ky 0;kz nz p and EEnzSL2
4:13b
dz

252

The E-k dispersion relation of the conduction electrons of the heavily doped constituent materials of the IV-VI SLs can be expressed as
9;i E; ks ; ggi 2 4:14
kz2 2
p9;i 1
q9;i E; ks ; ggi q9;i E; ks ; ggi 2 4p9;i R
1
where, p9;i ai h4 =4ml;i mli ; i 1; 2; q9;i E; ks ; ggi h2 =21=mli 1=mli ai h4 =4

ks2 1=m
li mti 1=mti mli ai c3 E; ggi 1=mli 1=mli and
9;i E; ks ; ggi c2 E; ggi c3 E; ggi h2 =2ai ks2 1=mti
R

h2 =2ks2 1=mti 1=m
h6 =4ks4 1=m
1=m
ti
ti ai
ti mti
The electron dispersion law in heavily doped quantum well IV-VI SLs with
graded interfaces can be expressed as
1
cosL0 k U2 E; ks
2
4:15
where
U2 E; ks 2 coshfb2 E; ks g cosfc2 E; ks g e2 E; ks sinhfb2 E; ks g sinfc22 E; ks g
"
!
#
fK112 E; ks g2
D0
3K212 E; ks coshfb2 E; ks g sinfc22 E; ks g
K212 E; ks
!
fK212 E; ks g2
3K112 E; ks
sinhfb2 E; ks g cosfc22 E; ks g
K112 E; ks

h
D0 2 fK112 E; ks g2 fK212 E; ks g2 coshfb2 E; ks g cosfc22 E; ks g

##
"
#
1 5fK112 E; ks g3 5fK212 E; ks g3
34K212 E; ks K112 E; ks sinfb2 E; ks g sinfc22 E; ks g ;

12
K212 E; ks
K112 E; ks
b2 E; ks K112 E; ks a0 D0 ;
2
E; ks
k112
2p9;2 1 q9;2 E V0 ; ks ; gg2 q9;2 E V0 ; ks ; gg2 2

9;2 E V0 ; ks ; gg2 2 ;
4p9;2 R
1
c22 E; ks K212 E; ks b0 D0 ;
2
E; ks 2p9;1 1 q9;1 E; ks ; gg1 q9;1 E; ks ; gg1 2
k212
9;1 E; ks ; gg1 2 ; and

4p9;1 R

K112 E; ks K212 E; ks

e2 E; ks
:
K212 E; ks K112 E; ks
1
253
The simplied dispersion relation in heavily doped quantum well IV-VI superlattices with graded interfaces under magnetic quantization can be expressed as
kz2

2

1
2eB
1
1 1
U
n
cos
E;
n

2
2
h
2
L20
4:16
where
"
U2 E; n 2 coshfb2 E; ng cosfc2 E; ng e2 E; n sinhfb2 E; ng sinfc22 E; ng
D0 fK112 E; ng2 =K212 E; n 3K212 E; n coshfb2 E; ng sinfc22 E; ng
!
fK212 E; ng2
sinhfb2 E; ng cosfc22 E; ng
3K112 E; n
K112 E; n
"

D0 2 fK112 E; ng2 fK212 E; ng2 coshfb2 E; ng cosfc22 E; ng
"
#
##
1 5fK112 E; ng3 5fK212 E; ng3
34K212 E; nK112 E; n sinhfb2 E; ng sinfc22 E; ng ;

12
K212 E; n
K112 E; n
b2 E; n K112 E; na0 D0 ;
2
k112
E; n 2p9;2n 1 q9;2n E V0 ; gg2 q9;2n E V0 ; gg2 2
9;2n E V0 ; gg2 2 ;
4p9;2n R
1
q9;2n E V0 ; gg2 h
=21=ml2
1=m
l2

2eB
1

n 1=m
a2 h =4
l2 mt2
h
2
4

1=m
t2 ml2 a2 c3 E V0 ; gg2 1=ml2 1=ml2 ;

2eB
1
2

n 1=mt2
h =2a2
R9;2n E V0 ; gg2 c2 E V0 ; gg2 c3 E V0 ; gg2
h

2
2
1=m
h2 =2ks0
1=mt2 1=m
t2
t2

2
2eB
1
n
a2 h6 =4
1=mt2 m
t2 ;
h
2
2
c2 E; n K212 E; nb0 D0 ; k212
E; n 2
p9;1n 1
q9;1n E; gg1
9;1n E; gg1 2
q9;1n E; gg1 2 4p9;1n R
1
254
q9;1n E; gg1 h
=21=ml1
1=m
l1

2eB
1

n 1=m
a1 h =4
l1 mt1
h
2
4

1=m
t1 ml1 a1 c3 E; gg1 1=ml1 1=ml1 ;
9;1 E; gg1 c2 E; gg1 c3 E; gg1 h2 =2a1 2eB=hn 11=mt1
R
2
2
2

1=m

h
=2k
1=m
1=m

t1
s0
t1
t1
1
2

a1 h6 =42eB=hn 1=m
t1 mt1 and
2

e2 E; n

K112 E; n K212 E; n

:
K212 E; n K112 E; n
The dispersion relation in quantum well heavily doped quantum well IV-VI
superlattices under magnetic quantization assumes the form
pnz
dz
2

2 2jejB
1
1
1 1
u
n
cos
E
;
n

43;n
2 2
h
2
L20
4:17a

nmax X
zmax
eBgv X
F1 g43
ph n0 n 1
n
n0SL
4:17b
nmax X
zmax
a0 e2 Bgv X
F1 g43 vz3 EnzSL3
2phdz n0 nzmin
n
JSL
4:17c
where
vz3 EnzSL3
2L0 sinL0dnzz p
hu02 EnzSL3 ; 0
4:17d
EnzSL3 is the quantized energy along z direction and is obtained from the equation
cos
L0 nz p
1
u2 EnzSL3 ; 0:
dz
2
4:17e
255
4.2.4 The Magneto EP from HgTe/CdTe Quantum Well HD

The electron energy spectra of the constituent materials of HgTe/CdTe SLs are
given by
"
B2 4A1 E B01
k 01
2A21
2
and
p#
B201 4A1 E
4:18
h2 k 2
T12 E; D2 ; Eg2 ; gg2 iT22 E; D2 ; Eg2 ; gg2
2mc2
4:19
where B01 3jej2 =128esc1 ; A1 h2 =2mc1 : esc1 is the semiconductor permittivity of the rst material. The energy-wave vector dispersion relation of the
conduction electrons in heavily doped quantum well HgTe/CdTe SLs with graded
interfaces can be expressed as
kz2 G192 iH192
4:20
where
2
G192 C182
D2182 =L20 ks2 ;
1
C182 cos1 x182 ; x182 2 2 1 G2182 H182

q
1
2 2 4G2 2 ;
1 G2182 H182
182
1
G182 G112 G122 D0 G132 G142 D0 G152 G162 ;
2
G112 2cosg12 cosg22 cos c8 E; ks
"
B2 4A1 E B01
c8 E; ks k8 E; ks b0 D0 ; k8 E; ks 01
2A21
p
B201 4A1 E
#1=2
ks2
G122 X12 E; ks sinh g12 cos g22 X22 E; ks sin g22 cosh g12 sin c8 E; ks
d12
k8 E; ks d12
d22
k8 E; ks d22
2
2
; X22 E; ks
;
X12 E; ks
2
2
k8 E; ks
k8 E; ks
d12 d22
d12 d22
G132 X32 E; ks cosh g12 cos g22 X42 E; ks sin g12 sin g22 sin c8 E; ks ;
2
d 2 d22
2d12 d22
X32 E; ks 12
3k8 E; ks ; X42 E; ks
;
k8 E; ks
k8 E; ks
G142 X52 E; ks sinh g12 cos g22 X62 E; ks sin g12 cosh g22 cos c8 E; ks ;
d12
d22
k2 E; ks ; X62 E; ks 3d22 2
k2 E; ks ;
X52 E; ks 3d12 2
2 8
2 8
d12 d22
d12 d22
256
G152 X92 E; ks cosh g12 cos g22

X102 E; ks sinh g12 sin g22 cos c8 E; ks ;
2
2
X92 E; ks 2d12
2d22
k82 E; ks ; X102 E; ks 2d12 d22 ;
G162 X72 E; ks sinh g12 cos g22

X82 E; ks sin g12 cosh g22 sin c8 E; ks =12;
X72 E; ks
X82 E; ks
3
5d12
5d12
3222 d12
34k8 E; ks d12 ;
k82 E; ks
2
k8 E; ks
d22
2
d12
3
5d12
5d22
3222 d12
34k8 E; ks d22 ;
k82 E; ks
2
k8 E; ks
d22
2
d12
1
H182 H112 H122 D0 H132 H142 D0 H152 H162 ;
2
H112 2sinh g12 sin g22 cos c8 E; ks ;
H122 X22 E; ks sinh g12 cos g22 X12 E; ks sin g22 cosh g12 sin c8 E; ks ;
H132 X42 E; ks cosh g12 cos g22 X32 E; ks sinh g12 sin g22 sin c8 E; ks ;
H142 X62 E; ks sinh g12 cos g22 X52 E; ks sin g12 cosh g22 cos c8 E; ks ;
H152 X102 E; ks cosh g12 cos g22 X92 E; ks sinh g12 sin g22 cos c8 E; ks ;
H162 X82 E; ks sinh g12 cos g22 X72 E; ks sin g12 cosh g22 sin c8 E; ks =12;
H192 = [((2C182 D182 =L20 and D182 sinh1 x182
The simplied dispersion relation in heavily doped quantum well HgTe/CdTe

superlatices with graded interfaces under magnetic quantization can be expressed as
kz 2 G192E;n iH192E;n
4:21
where
"
G192E;n
2
C182E;n
D2182E;n
L20
#
2eB=hn 1=2 ;
1
2
C1820D cos1 x182E;n ; x182E;n 2 2 1 G2182E;n H182E;n
q 1
2
2 4G2182E;n 2 ;
1 G2182E;n H182E;n
1
G182E;n G112E;n G122E;n D0 G132E;n G142E;n D0 G152E;n G162E;n ;
2
G112E;n 2cosg12 cosg22 cos c8 E; n; c8 E; n k8 E; nb0 D0 ;
"
#1=2
p
B201 4A1 E B01 B201 4A1 E
k8 E; n
2eB=hn 1=2
;
2A21
257
G120D X12 E; nsinh g12E;n cos g22E;n

X22 E; nsin g22E;n cosh g12E;n sin c8 E; ks ;
d12E;n
k8 E; ks d12E;n
d22E;n
k8 E; nd22E;n
2
2
; X22 E; n
;
X12 E; n
2
2
k8 E; ks d12E;n
k8 E; n d12E;n
d22E;n
d22E;n
G1320D X32 E; ncosh g12E;n cos g22E;n
X42 E; nsinh g12E;n sin g22 sin c8 E; n;
2
2
d12E;n
d2E;n
2d12E;n d22E;n
3k8 E; n; X42 E; n
;
X32 E; n
k8 E; n
k8 E; n
G1420D X52 E; nsinh g12E;n cos g22E;n

X62 E; nsin g12E;n cosh g22E;n cos c8 E; n;
d12E;n
X52 E; n 3d12E;n 2
k82 E; n;
2
d12E;n d22E;n
d22E;n
X62 E; n 3d22E;n 2
k82 E; n;
2
d12E;n d22E;n
G1520D X92 E; ncosh g12E;n cos g22E;n
X102 E; nsinh g12E;n sin g22E;n cos c8 E; n;
2
2
X92 E; n 2d12E;n
2d22E;n
k82 E; n; X102 E; n 2d12E;n d22E;n ;

X82 E; nsin g12E;n cosh g22E;n sin c80D E; n=12;
3
2
5d12E;n
3d22E;n
d12E;n
5d12E;n
2
34k8 E; nd12E;n ;
X72 E; n 2
k
E;
n
8
2
k8 E; n
d12E;n d22E;n
3
2
5d22E;n
3d22E;n
d12E;n
5d22E;n
34k8 E; nd22E;n ;
k82 E; n
X82 E; n 2
2
k8 E; n
d12E;n d22E;n
1
H182E;n H112E;n H122E;n D0 H132E;n H142E;n D0 H152E;n H162E;n
2
H112E;n 2sinh g12E;n sin g22E;n cos c8 E; n;
H1220D X22 E; nsinh g12E;n cos g22E;n X12 E; nsin g22E;n cosh g12E;n sin c8 E; n;
H132E;n X42 E; ncosh g12E;n cos g22E;n X32 E; nsinh g12E;n sin g22E;n sin c8 E; n;
H142E;n X62 E; nsinh g12E;n cos g22E;n X52 E; nsin g12E;n cosh g22E;n cos c8 E; n;
H1520D X102 E; ncosh g12E;n cos g22E;n X92 E; nsinh g12E;n sin g22E;n cos c8 E; n;
H162E;n X82 E; nsinh g12E;n cos g22E;n X72 E; nsin g12E;n cosh g22E;n sin c8 E; n=12;
H192E;n = [((2C182E;n D182E;n =L20 and D182E;n sinh1 x182E;n
258
The dispersion relation in quantum well heavily doped HgTe/CdTe superllatices

under magnetic quantization assumes the form
nz p 2
G192E44;n iH192E44;n
dz
4:22a

n0SL
nmax nX
zmax
X
eBgv
Real part of
F1 g44
ph
n0 n 1
4:22b
JSL
nmax nX
zmax
X
a0 e2 Bgv
Real part of
F1 g44 vz4 EnzSL4
2phdz
n0 nzmin
4:22c
where
vz4 EnzSL4
hdz G0192
2pnz

0

iH192 kx 0;ky 0;kz nz p and EEnzSL4
dz
4:22d

4.2.5 The Magneto EP from Strained Layer Quantum Well

HD Superlattices with Graded Interfaces
The dispersion relation of the conduction electrons of the constituent materials of
the strained layer super lattices can be expressed as
E T1i kx2 E T2i ky2 E T3i kz2 qi E 3 Ri E 3 Vi E fi
4:23
259
where
p

3
bi ei
3di exyi
c
c
T1i hi ; hi Egi C1i

ei ai C1i
ei bi exxi
;
2
2
2
p

3di exyi
3
bi ei
c
c
;

ei ai C1i
ei bi exxi
T2i xi ; xi Egi C1i
2
2
2

3
bi ei
c
c
ei ai C1i
ei bi ezzi
T3i di ; di Egi C1i
2
2

3
c
c
Ri qi 2Ai C1i ei ; qi 2 ; Ai Egi C1i ei ;
2B2i

2

2
2C
e
2C2i exyi
xyi
c
c
2Ai C1i
C1i
ei ; 1i qi
ei A2i
Vi qi A2i 2i
3
3
Therefore the electron energy spectrum in HD stressed materials can be written

as
Pi E; ggi kx2 Qi E; ggi ky2 Si E; ggi kz2 1
4:24
where

Pi E; ggi
c0 E; ggi I0 T1i
"
Di E; ggi
#
"
!# #
E2
1i
E
1 Erf
1 2 Ri h0 E; ggi Vi c0 E; ggi
;
ggi
2
ggi

c0 E; ggi I0 T2i
c0 E; ggi I0 T3i
1
and Si E; ggi
I0 1 Erf E=ggi ; Qi E; ggi
2
Di E; ggi
Di E; ggi
qi g3gi
E2
p exp
Di E; ggi
2 p
g2gi
!"
The energy-wave vector dispersion relation of the conduction electrons in heavily

doped strained layer quantum well SLs with graded interfaces can be expressed as
1
cosL0 k /6 E; ks
2
4:25
where

/6 E; ks 2 cosh T4 E; gg2 cos T5 E; gg1 T6 E; ks sinhT4 E; gg2 sinT5 E; gg1
!
"

k02 E; gg2
D0
3k00 E; gg1 cosh T4 E; gg2 sin T5 E; gg1
k00 E; gg1
#
!

k 02 E; gg1
3k0 E; gg2
sinh T4 E; gg2 cos T5 E; gg1
k0 E; gg2
2

D0 2 k0 E; gg2 k 02 E; gg1 cosh T4 E; gg2 cos T5 E; gg1
!

1 5k03 E; gg2 5k 03 E; gg1
34k0 E; gg2 k 0 E; gg1 sinh T5 E; gg2 sinT5 E; gg1

k0 E; gg2
12 k00 E; gg1
260

T4 E; gg2 k0 E; gg2 a0 D0 ;
i1=2

1=2 h
k0 E; gg2 S2 E V0 ; gg2
P2 E V0 ; gg2 kx2 Q2 E V0 ; gg2 ky2 1
;
T5 E; gg1 k 0 E; gg1 b0 D0 ;

1=2 h

i1=2
k 0 E; gg1 S1 E; gg1
1 P1 E; gg1 kx2 Q1 E; gg1 ky2
and
"
#
k0 E; gg2 k 0 E; gg1

T6 E; ks 0
k E; gg1 k0 E; gg2
Therefore the dispersion relation of the conduction electrons in heavily doped

strained layer quantum well QEPs with graded interfaces can be expressed as
1
cosL0 k u6 E; n
2
4:26
where

/6 E; n 2 cosh T4 E; n; gg2 cos T5 E; n; gg1 T6 E; n sinhT4 E; n; gg2 sinT5 E; n; gg1
"
!
2

k0 E; n; gg2
3k00 E; n; gg1 cosh T4 E; n; gg2 sin T5 E; n; gg1
D0
k00 E; n; gg1
!
#

k 02 E; n; gg1
sinh T4 E; n; gg2 cos T5 E; n; gg1
3k0 E; n; gg2 0
k0 E; n; gg2

02
k; n; gg1 cosh T4 E; n; gg2 cos T5 E; n; gg1
D0 2k02 E; n; gg2 k0D
!
#

1 5k03 E; n; gg2 5k003 E; n; gg1
0

34k
E;
n;
g
k
E;
n;
g
sinh
T
E;
n;
g
sinT
E;
n;
g

0
4
5
g2 0
g1
g2
g1
12 k00 k; n; gg1
k0 E; n; gg2

T4 E; n; gg2 k0 E; n; gg2 a0 D0 ;
p i

1=2 h
k0 E; n; gg2 S2 E V0 ; gg2
n 1=2heB= q1 Eq2 E 11=2 ;

q1 E
h2 =2P2 E V0 ; gg2 ; q2 E h2 =2Q2 E V0 ; gg2
T5 E; n; gg1 k00 E; n; gg1 b0 D0 ;

h
p ii1=2

1=2 h
1 n 1=2heB= q3 Eq4 E
k00 E; n; gg1 S1 E; n; gg1

q3 E
h2 =2P1 E; gg1 ; q4 E h2 =2Q1 E; gg1
"
#
k0 E; n; gg2 k00 E; n; gg1

T6 E; n 0
k0 E; n; gg1 k0 E; n; gg2
261
The energy-wave vector dispersion relation of the conduction electrons in

heavily doped quantum well strained layer SLs with graded interfaces can be
expressed as

2

2 2jejB
pnz
1
1
1
n
2 cos1 u6 E47;n ; n

2
h
2
dz
L0
4:27

nmax X
zmax
eBgv X
F1 g47
ph n0 n 1
n
n0SL
4:28a
nmax X
zmax
a0 e2 Bgv X
F1 g47 vz7 EnzSL7
2phdz n0 nzmin
n
JSL
4:28b
where
vz7 EnzSL7
2L0 sinL0dnzz p
4:28c
hu6 EnzSL7 ; 00
cos
L0 nz p
1
u6 EnzSL7 ; 0:
dz
2
4:28d

Effective Mass Super Lattices
Following Sasaki [71], the electron dispersion law in III-V heavily doped effective
mass super-lattices (EMSLs) can be written as

kx2
1
2
fcos1 f21 E; ky ; kz g2 k?
L20

4:29
262
in which

f21 E; ky ; kz a1 cos a0 C21 E; k? ; gg1 b0 D21 E; k? ; gg2

2
ky2 kz2 ;
a2 cos a0 C21 E; k? ; gg1 b0 D21 E; k? ; gg2 ; k?
"s
#2 2
M2 0; gg2
a1
1 44
M1 0; gg1
"s
#2 2
M2 0; gg2
a2
1 44
M1 0; gg1
M2 0; gg2
M1 0; gg1
M2 0; gg2
M1 0; gg1
!1=2 31
5 ;
!1=2 31
5 ;

2
ai bi ggi 1 ai ci ci bi ai bi
1
ai
bi
p
p
1
Mi 0; ggi mci p T0; ggi 2
1
2
ci p 2
ci
ci
p
pci
ci
(
!
!!
2

a
X
1
ai
bi
2
2
1
p
1
p
p

sinh
1
exp 2 2
exp
1
ci
p
ci ggi
ci
ci ci ggi p ci g2gi
4
ci ggi
p1
!
!
!)##

a
X
1
p2 1
p
exp 2 2
exp
cosh
;
ci ggi
4 ggi
ci ggi
p1
"

ai bi g2gi
ai ci bi ci ai bi ggi
1
ai
bi
p
1
1
2
ci 4
ci
ci
2 p 2ci
ci
!
!#

a
1
ai
bi
2
1 X
expp2 =4
p
p exp 2 2
sinh

1
;
1
ci
p
ci ggi
ci
ci ci ggi p
ci ggi p1
T0; ggi 2
C21 E; k? ; gg1 e1 ie2 ; D21 E; k? ; gg2 e3 ie4 ;

q
q
1
1
2
2
2
e1 t1 t2 t1 =2 ; e2 t12 t22 t1 =22 ;

t1

2mc1
2mc1
2
T
E;
D
;
g
;
E

k
T21 E; D1 ; gg1 ; Eg1 ;
11
1 g1
g1
? ; t2
2
h

h2
"p
#1=2
"p
#1=2
t32 t42 t3
t32 t42 t3
e3
; e4
2
2

2mc2
2m
2
t3
T12 E; D2 ; gg2 ; Eg2 k?
; t4 2c2 T22 E; D2 ; gg2 ; Eg2 ;
2
h

h
Therefore (4.29) can be expressed as
kx2 d7 id8
4:30
263
where

1 2
2
2
1

k
d

d
p5 ;
6
? ; d5 cos
L20 5
31=2
q
2

2
1 d23 d24
1 d23 d24 4d24
5 ;
p5 4
2
d7
d3 a1 cos D1 cosh D2 a2 cos D3 cosh D4 ;

d4 a1 sin D1 sinh D2 a2 sin D3 sinh D4 ;
D1 a0 e1 b0 e3 ; D2 a0 e2 b0 e4 ; D3 a0 e1 b0 e3 ; D4 a0 e2 b0 e4 ;
d6 sinh1 p5 and d8 2d5 d6 =L20
Therefore the magneto electron dispersion relation in this case assumes the form
kx 2 d7E;n id8E;n
4:31
where

2eB
1
2
1
2
n
; d5E;n cos1 p5E;n ;

d

d

6E;n
h
2
L20 5E;n
q31=2
2
1 d23E;n d24E;n 1 d23E;n d24E;n 2 4d24E;n
5 ;
4
2
d7E;n
p5E;n
d3E;n a1 cos D1E;n cosh D2E;n a2 cos D3E;n cosh D4E;n ;

d4E;n a1 sin D1E;n sinh D2E;n a2 sin D3E;n sinh D4E;n ;
D1E;n a0 e1E;n b0 e3E;n ; D2E;n a0 e2E;n b0 e4E;n ; D3E;n a0 e1E;n b0 e3E;n ;
D4E;n a0 e2E;n b0 e4E;n ;
d6E;n sinh1 p5E;n and d8E;n 2d5E;n d6E;n =L20 ;
e1E;n
e3E;n
t1E;n
q
q
1
1
2
2
t1E;n
t22 t1E;n =22 ; e2E;n t1E;n
t22 t1E;n =22 ;
2q
31=2
2q
31=2
2
2
t42 t3E;n
t42 t3E;n
t3E;n
t3E;n
5 ; e4E;n 4
5 ;
4
2
2

2mc1
2eB
1
2mc2
2eB
1
T
E;
D
;
g
;
E
T
E;
D
;
g
;
E

n
;
t
n
11
1 g1
g
3E;n
12
2 g2
g2
h
2
h

2
h2
h2
264
The dispersion relation in quantum well heavily doped III-V superlattices under
nx p 2
d7A1;n id8A1;n
dx
4:32
where A1 is the totally quantized energy in this case.

n0SL
nmax nX
zmax
X
eBgv
Real part of
F1 g45
ph
n0 n 1
4:33a
where g45 kB T1 EFSL A1 and EFSL is the Fermi energy in this case.
JSL
nmax nX
x max
X
a0 e2 Bgv
Real part of
F1 g45 vx5 EnzSL5
2phdx
n0 nx min
4:33b
where
vx5 EnzSL5
2pnx

hdx d07 id08 ky 0;kz 0;kx nx p and EEnzSL5
4:33c
dx
EnzSL5 is the quantized energy along x direction and is obtained by substituting

ky 0; kz 0; kx ndxxp and E EnzSL5 in (4.30) and the primes denote the differentiation with respect to energy.

Following Sasaki [70], the electron dispersion law in heavily doped II-VI EMSLs
can be written as
kz2 D13 iD14 ;
4:34
265
where

1 2
2
2
D

D

k
12
s
L20 11
q31=2
2
2
2
1

D

D

1 D29 D210 2 4D210
9
10
5 ;
cos1 p6 ; p6 4
2
D13
D11
D9 a1 cos D6 cosh D7 a2 cos D8 cosh D7 ;

D10 a1 sin D6 sinh D7 a2 sin D8 sinh D7 ;

D6 a0 C22 E; ks ; gg1 b0 e3 ; D7 b0 e4 ; D8 a0 C22 E; Ks ; gg1 b0 e3 ;
" (
)#1=2
2mjj;1
h2 ks2

C22 E; ks ; gg1
;
c3 E; gg1 C0 ks
2m?;1
h2

!1=2 31
"s
#2 2

M2 0; gg2
M2 0; gg2
2

4
5
;
1
a1
4
; M1 0; gg1 mc1 1
p
M1 0; gg1
M1 0; gg1
"s
#2 2
!1=2 31
M2 0; gg2
M2 0; gg2
5
1 44
a2
M1 0; gg1
M1 0; gg1
D12 cos1 p6 ; D14
2D11 D12
L20
The electron dispersion law in heavily doped II-VI QEP can be written as
kz 2 D13 E;n iD14 E;n ;
4:35
where

1 2
2eB
1
2
n
D

D

11E;n
12E;n
h

2
L20
r
312
2
2
2
2
2
2
2
1

D

D

1

D

D
4D
9E;n
10E;n
9E;n
10E;n
10E;n 7
6
7;
cos1 p6E;n ; p6E;n 6
5
4
2
D13E;n
D11E;n
266

D9E;n a1 cos D6E;n cosh D7E;n a2 cos D8E;n cosh D7E;n ;

D10E;n a1 sin D6E;n sinh D7E;n a2 sin D8E;n sinh D7E;n ;

D6E;n a0 C22E;n EE;n ; gg1 b0 e3E;n ;

D7E;n b0 e4E;n ; D8E;n a0 C22E;n EE;n ; gg1 b0 e3E;n ;
" (

1=2 )#1=2
2mjj;1
h2
2eB
1
2eB
1
c
E
;
g

;
C22E;n EE;n gg1
n

C
n
0
3 E;n g1
2m?;1 h
2
h

2
h2
D12E;n cos1 p6E;n ; D14E;n
2D11E;n D12E;n
;
L20
nz p 2
D13;A2;n iD14;A2;n
dz
4:36

n0SL
nmax nX
z max
X
eBgv
Real part of
F1 g46
ph
n0 n 1
4:37a
where g46 kB T1 EFSL A2 and EFSL is the Fermi energy in this case.
JSL
nmax nX
z max
X
a0 e2 Bgv
Real part of
F1 g46 vz6 EnzSL6
2phdz
n0 nz min
4:37b
where
vz6 EnzSL6
2pnz

hdz D013 iD014 kx 0;ky 0;kz nz p and EEnzSL6
4:37c
dz

267

Following Sasaki [70], the electron dispersion law in IV-VI, EMSLs can be written
as

kz2
1
fcos1 f23 E; kx ; ky g2 ks2
L20

4:38
where

f23 E; kx ; ky a3 cos a0 C23 E; kx ; ky ; gg1 b0 D23 E; kx ; ky ; gg1

a4 cos a0 C23 E; kx ; ky ; gg2 b0 D23 E; kx ; ky ; gg2 ;
"s
#2 2
M3 0; gg2
a3
1 44
M3 0; gg1
"s
#2 2
M3 0; gg2
a4
1 44
M3 0; gg1
M3 0; gg2
M3 0; gg1
M3 0; gg2
M3 0; gg1
!1=2 31
5 ;
!1=2 31
5 ;
"(
!)

h
2
2
1
1
ai 1

q9;i 0; ggi

p
ml;i ml;i
!
"

##

1=2
2
1
1
2 ai ggi
p
4p9;i R9;i 0; ggi

q
0;
g
2p
1

ai 1
;
9;i
9;i
gi
p
m
p
m
p
l;i
l;i
"
#
"
!
!#
ai ggi 1
ggi ai g2gi
ai h4
h2 1
1
1
p
p9;i ; q9;i 0; ggi

R
0;
g
;

;
9;i
gi
m
m
2 m
2
p m
p
4ml;i ml;i
l;i
l;i
l;i
l;i
h
h

2

C23 E; kx ; ky ; gg1 2p9;i :1 q9;i E; kx ; ky ; gg1 q9;i E; kx ; ky ; gg1
1=2 ii1=2

;
4p9;i R9;i E; kx ; ky ; gg1
M3 0; ggi 4p9;i 1
h
1

h
2
D23 E; kx ; ky ; gg2 2p9;2
q9;2 E; kx ; ky ; gg1 q9;2 E; kx ; ky ; gg1

1=2 ii1=2
4p9;2 R9;2 E; kx ; ky ; gg1
;
268
"
!
4 2
h
1
1
ai ks
m m
4
m
t;i l;i
l;i mt;i
!#
1
1
ai c3 E; ggi
;
m
m
l;i
l;i
"
!
h2 2 1

1
R9;i E; kx ; ky ; ggi c2 E; ggi c3 E; ggi ai ks

mt;i
2
m
t;i
"s#2 " #1
!
#
h2

1
1
a
h2 ks4
m2
m 1=2
1
4 2
ks2

;
a
5

mt;i mt;i
2
4 mt;i mt;i
m1
m1
2
h
q9;i E; kx ; ky ; ggi
2
1
1

ml;i
m
l;i
Therefore the electron dispersion law in heavily doped IV-VI, EMSLs under
magnetic quantization can be written as
kz 2 1=L20 fcos1 f23 E; ng2
2eB
1
n
h
2
4:39

where f23 E; n a3 cos a0 C23E;n E; n; gg1 b0 D23E;n E; n; gg1

a4 cos a0 C23E;n E; n; gg2 b0 D23E;n E; n; gg2 ;
h
h
2
q9;1 E; n; gg1 q9;1 E; n; gg1
1=2 ii1=2

4p9;1 R9;1 E; n; gg1
;
h
h
1
2
q9;2 E; n; gg2 q9;2 E; n; gg2
D23 E; n; gg2 2p9;2
1=2 ii1=2

4p9;2 R9;2 E; n; gg2
;
C23 E; n; gg1
2p9;1
1
"
h2
q9;i E; n; ggi
2
h4 2eB
1
1
1
n
ai

2
4 h
ml;i mt;i mt;i ml;i
!#
1
1
ai c3 E; ggi
;
m
m
l;i
l;i
"
!
h2 2eB
1
1
1
n
R9;i E; n; ggi c2 E; ggi c3 E; ggi ai

h
2
mt;i
2
m
t;i
!
#
1 2
h2 2eB
1
1
1
ah6 2eB
h n 2
n

;
2
mt;i m
2 h
4
m
t;i
t;i mt;i
1
1

ml;i ml;i
269

expressed as

2

2
pnz
1
1
2jejB
1
n
2 cos1 f23 A3; n

2
h
2
dz
L0
4:40

nmax X
z max
eBgv X
F1 g48
ph n0 n 1
n
n0SL
4:41a
where g47 kB T1 EFSL E47;n and EFSL is the fermi energy in this case.
nmax X
z max
a0 e2 Bgv X
F1 g48 vz8 EnzSL8
2phdz n0 nz min
n
JSL
4:41b
where
vz8 EnzSL8
2L0 sinL0dnzz p
hf23 EnzSL8 ; 00
4:41c
cos
L0 nz p
1
f23 EnzSL8 ; 0:
dz
2
4:41d
4.2.9 The Magneto EP from HgTe/CdTe Quantum Well HD

Following Sasaki [71], the electron dispersion law in heavily doped HgTe/CdTe
EMSLs can be written as
kz2 D13H iD14H
4:42
270

1 2
2
2
D

D

k
12H
s
L20 11H
q31=2
2
1 D29H D210H 1 D29H D210H 2 4D210H
5 ;
cos1 p6H ; p6H 4
2
where D13H
D11H
D9H a1H cos D5H cosh D6H a2H cos D7H cosh D6H ;
D10H a1H sin D5H sinh D6H a2H sin D7H sinh D6H ;

D5H a0 C22H E; ks ; gg1 b0 e3 ; D6H b0 e4 ; D7H a0 C22H E; Ks ; gg1 b0 e3 ;
2
1=2
B 2A1 E B01 B201 4A1 E
2

k
;
C22H E; ks ; gg1 01
s
2A21
a1H
a2H
"s
#2 "
#1
M2 0; gg2
M2 0; gg2 1=2
4
;
1
mc1
mc1
"s
#2 "
#1
M2 0; gg2
M2 0; gg2 1=2
4
1
mc1
mc1
D12H cos1 p6H ; D14H
2D11H D12H
L20
The electron dispersion law in heavily doped HgTe/CdTe EMSLs under magnetic quantization can be written as
kz 2 D13HE;n iD14HE;n
where D13HE;n 1=L20 D211HE;n D212HE;n
2eB
1
n
h

2
D11HE;n cos1 p6HE;n ; p6HE;n 1 D29HE;n D210HE;n
4:43
q
1
1 D29HE;n D210HE;n 2 4D210HE;n =22

D9HE;n a1H cos D5HE;n cosh D6HE;n a2H cos D7HE;n cosh D6HE;n ;

D10HE;n a1H sin D5HE;n sinh D6HE;n a2H sin D7HE;n sinh D6HE;n ;

D5HE;n a0 C22HE;n EE;n ; ggi b0 e3 ; D6HE;n b0 e4 ;

D7HE;n a0 C22HE;n EE;n etag1 b0 e3 ;
2
1=2
B 2A1 EE; n B01 B201 4A1 EE;n 2eB
1
n

C22HE;n EE;n ; gg1 01
;
h
2
2A21
2D11HE;n D12HE;n
D12HE;n cos1 p6HE;n ; D14HE;n
L20
271
nz p 2
D13;A4;n iD14;A4;n
dz
4:44

n0SL
nmax nX
z max
X
eBgv
Real part of
F1 g48
ph
n0 n 1
4:45a
where g48 kB T1 EFSL A4

JSL
nmax nX
zmax
X
a0 e2 Bgv
Real part of
F1 g48 vz81 EnzSL81
2phdz
n0 nzmin
4:45b
where
vz81 EnzSL81
2pnz
hdz D 13 iD 14 jkx 0;ky 0;kz nz p and EEnzSL81
4:45c
dz

4.2.10 The Magneto EP from Strained Layer Quantum Well

HD Effective Mass Super Lattices
The dispersion relation of the constituent materials of heavily doped III-V super
lattices can be written as
Pi E; ggi kx2 Qi E; ggi k2y Si E; ggi k2z 1
4:46
where Pi E; ggi c0 E; ggi I0 T1i Di E; ggi 1 ; I0 1=21 Erf E=ggi ,

p
c
c
T1i Egi C1i
ei ai C1i
ei 3=2bi exxi bi ei =2 3di exyi =2;
272
i E; g qi g3 =2p
p expE2 =g2gi 1 E 2 =g2gi Ri h0 E; ggi Vi c0 E; ggi
D
gi
gi
c
c
fi =21 Erf E=ggi ; qi 3=2B22i ; Ri qi 2Ai C1i
ei ; Ai Egi C1i
ei ;
2
c
2
c
Vi qi A2i 2C2i
exyi =3 2Ai C1i
ei ; 1i qi 2C2i
exyi =3 C1i
ei A2i ;
1
c
i E; g ; T2i Egi C ei ai C c ei 3=2bi exxi bi ei =2
i E; ggi c0 E; ggi I0 T2i D
Q
gi
1i
1i
p
i E; g 1 ;
Si E; ggi c0 E; ggi I0 T3i D
3di exyi =2;
gi
c
c
ei ai C1i
ei 3=2bi ezzi bi ei =2;
T3i Egi C1i
The electron energy spectrum in heavily doped strained layer effective mass
super-lattices can be written as

kz2
1
fcos1 f40 E; kx ; ky g2 ks2
L20

4:47

where f40 E; kx ; ky a20 cos a0 C40 E; kx ; ky ; gg1 b0 D40 E; kx ; ky ; gg1

a21 cos a0 C40 E; kx ; ky ; gg2 b0 D40 E; kx ; ky ; gg2 ;
a20
!1=2 31
"s
#2 2
Ms2 0; gg2
Ms2 0; gg2
5 ;
1 44
Ms1 0; gg1
Ms1 0; gg1
Msi 0; ggi h=2qi ggi
p
p
p
p
qggi ggi =2 p T3i =22 fggi =2 p T3i =2g fVi =2 Ri ggi = p 1i ggi pg
p
p
p
1=2 T3i =ggi pf1i =2 Vi ggi =2 p Ri g2gi =4 qi g3gi =2 pg
a20
a21
"s
#2 2
Ms2 0; gg2
1 44
Ms1 0; gg1
"s
#2 2
Ms2 0; gg2
1 44
Ms1 0; gg1
!1=2 31
Ms2 0; gg2
5 ;
Ms1 0; gg1
!1=2 31
Ms2 0; gg2
5
Ms1 0; gg1
1 E; gg1 k2 1=2 S1 E; gg1 1=2

1 E; gg1 kx2 Q
C40 E; kx ; ky ; gg1 1 P
y
1 E; gg2 k2 1=2 S2 E; gg2 1=2
2 E; gg2 kx2 Q
D40 E; kx ; ky ; gg2 1 P
y
273
Therefore, the electron dispersion law in heavily doped strained layer effective
mass quantum dot super-lattices can be expressed as
1
2eB
1
n
kz 2 2 fcos1 f 40 E; ng2
h
2
L0
4:48

where f40 E; n a20 cos a0 C40 E; n; gg1 b0 D40 E; n; gg1

a21 cos a0 C40 E; n; gg2 b0 D40 E; n; gg2 ;
heB
1
n 1=2 S1 E; gg1 1=2 ;
/50 E; gg1
2
q
/50 E; gg1 w50 E; gg1 w51 E; gg1 ;
C40 E; n; gg1 1
h2
h2
; w51 E; gg1
w50 E; gg1
2P1 E; gg1
2Q1 E; gg1
heB
1
n 1=2 S2 E; gg2 1=2
D40 E; n; gg2 1
/501 E; gg2
2
q
/501 E; gg2 w501 E; gg2 w511 E; gg2
h2
h2
w501 E; gg2
; w511 E; gg2
2P2 E; gg2
2Q2 E; gg2
expressed as

2

2
pnz
1
1
2jejB
1
n
2 cos1 f40 A8; n

2
h
2
dz
L0
4:49

nmax X
zmax
eBgv X
F1 g50
ph n0 n 1
n
n0SL
4:50a
where g50 kB T1 EFSL A8

nmax X
zmax
a0 e2 Bgv X
F1 g50 vz50 EnzSL50
2phdz n0 nzmin
n
JSL
4:50b
274

2L0 sin
where vz8 EnzSL50 hf
L0 nz p
dz
40 EnzSL50 ;0
, EnzSL50 is the quantized energy along z direction
and is obtained from the equation

cos
L0 nz p
1
f40 EnzSL50 ; 0:
dz
2
4:50c
4.2.11 The EP from III-V Quantum Dot HD Superlattices

with Graded Interfaces
n0QDSL
nxmax nymax nzmax

XXX
2gv
Real part of
F1 g100
dx dy dz
nx1 ny1 nz1
4:51
where g100 kB T 1 EFQDHDSL e11 and EFDHDSL is the Fermi energy in this
case and and e11 is the totally quantized energy which can be obtained by
np
substituting kx ndxxp ; ky dyy ; kz ndzzp and E e11 in (4.2).
The electron density per sub-band assumes the form
n0QDSL
2gv
Real part of F1 g100
dx dy dz
4:52

JQDSL
nX
ymax n
zmax
xmax n
X
X
a0 egv
Real part of
F1 g100 vz1 EnzSL1 :
dx dy dz
n 1 n 1 nzmin
x
4:53
4.2.12 The EP from II-VI Quantum Dot HD Superlattices

n0QDSL
nxmax nymax nzmax

XXX
2gv
Real part of
F1 g101
dx dy dz
nx1 ny1 nz1
4:54
275
where g101 kB T 1 EFQDHDSL e21 and e21 is the totally quantized energy
np
which can be obtained by substituting kx ndxxp ; ky dyy ; kz ndzzp and E e21 in
(4.9).
n0QDSL
2gv
dx dy dz
4:55

JQDSL
nX
ymax n
zmax
xmax n
X
X
a0 egv
Real part of
F1 g101 vz2 EnzSL2
dx dy d z
n 1 n 1 nzmin
x
4:56
4.2.13 The EP from IV-VI Quantum Dot HD Superlattices

n0QDSL
nxmax nymax nzmax

XXX
2gv
Real part of
F1 g102
dx dy dz
nx1 ny1 nz1
4:57
np
(4.15).
n0QDSL
2gv
dx dy dz
4:58

JQDSL
nX
ymax n
zmax
xmax n
X
X
a0 egv
Real part of
F1 g102 vz3 EnzSL3
dx dy d z
n 1 n 1 nzmin
x
4:59
276
4.2.14 The EP from HgTe/CdTe Quantum Dot HD

n0QDSL
nxmax nymax nzmax

XXX
2gv
Real part of
F1 g104
dx dy dz
nx1 ny1 nz1
4:60
np
(4.20).
n0QDSL
2gv
dx dy dz
4:61

JQDSL
nX
ymax n
zmax
xmax n
X
X
a0 egv
Real part of
dx dy dz
n 1 n 1 nzmin
x
4:62
4.2.15 The EP from Strained Layer Quantum Dot HD

n0QDSL
nxmax nymax nzmax

XXX
2gv
Real part of
F1 g105
dx dy dz
nx1 ny1 nz1
4:63
np
(4.25).
n0QDSL
2gv
dx dy dz
4:64
277

JQDSL
nX
ymax n
zmax
xmax n
X
X
a0 egv
Real part of
dx dy dz
n 1 n 1 nzmin
x
4:65
4.2.16 The EP from III-V Quantum Dot HD Effective Mass

Superlattices
n0QDSL
nxmax nymax nzmax

XXX
2gv
Real part of
F1 g106
dx dy dz
nx1 ny1 nz1
4:66
np
(4.30).
n0QDSL
2gv
dx dy dz
4:67

JQDSL
nX
ymax n
zmax
xmax n
X
X
a0 egv
Real part of
dx dy dz
n 1 n 1 nzmin
x
4:68
4.2.17 The EP from Heavily Doped Effective Mass Quantum

Dot II-VI Super-Lattices
n0QDSL
nxmax nymax nzmax

XXX
2gv
Real part of
F1 g107
dx dy dz
nx1 ny1 nz1
4:69
which can be obtained by substituting
np
kx ndxxp ; ky dyy ; kz ndzzp and E e71 in (4.34).
278

n0QDSL
2gv
dx dy dz
4:70

JQDSL
nX
ymax n
zmax
xmax n
X
X
a0 egv
Real part of
dx dy dz
n 1 n 1 nzmin
x
4:71
4.2.18 The EP from Heavily Doped Effective Mass Quantum

Dot IV-VI Super-Lattices
n0QDSL
nxmax nymax nzmax

XXX
2gv
Real part of
F1 g108
dx dy dz
nx1 ny1 nz1
4:72
np
(4.38).
n0QDSL
2gv
dx dy dz
4:73

JQDSL
nX
ymax n
zmax
xmax n
X
X
a0 egv
Real part of
dx dy dz
n 1 n 1 nzmin
x
4:74
4.2.19 The EP from Heavily Doped Effective Mass

HgTe/CdTe Quantum Dot Super-Lattices
n0QDSL
nxmax nymax nzmax

XXX
2gv
Real part of
F1 g109
dx dy dz
nx1 ny1 nz1
4:75
279
np
(4.42).
n0QDSL
2gv
dx dy dz
4:76

JQDSL
nX
ymax n
zmax
xmax n
X
X
a0 egv
Real part of
dx dy dz
n 1 n 1 nzmin
x
4:77
4.2.20 The EP from Heavily Doped Strained Layer Effective

Mass Quantum Dot Super-Lattices
n0QDSL
nxmax nymax nzmax

XX
2gv X
F1 g110
4:78
np
(4.42).
2gv
F1 g110
dx dy dz
n0QDSL
4:79

JQDSL
ymax n
zmax
xmax n
X
X
a0 egv nX
dx dy dz n 1 n 1 nzmin
x
4:80
280

Using the appropriate equations in Figs. 4.1, 4.2, 4.3 and 4.4, the normalized EP
from QW HD III-V SLs (taking GaAs/Ga1xAlxAs and InxGa1xAsInP QW HD
SLs) with graded interfaces under the magnetic quantization has been plotted as
functions of the inverse quantizing magnetic eld, normalized electron degeneracy,
lm thickness and the normalized incident photon energy respectively. It appears
from Fig. 4.1 that the EP in this case oscillates with inverse quantizing magnetic eld
due to SdH effect. The Fig. 4.2 exhibits the fact that the EP increases with increasing
carrier degeneracy in an oscillatory way and the nature of oscillations is different as
compared with Fig. 4.1. From Fig. 4.3, it can be inferred that the EP oscillates with
lm thickness and for certain values of lm thickness the EP exhibits very large
values. From Fig. 4.4, it appears that EP increases with increasing photon energy in
quantum steps. The plot of the normalized magneto EP from II-VI HD QWSLs
(taking CdS/ZnSe QW HD SL as an example) with graded interfaces as a function of
inverse quantizing magnetic eld has been shown in the curve (b) of Fig. 4.5 where
the plot (a) has been drawn with k0 0 for the purpose of assessing the splitting of
the two spin states by the spin orbit coupling and the crystalline eld on the magneto
EP in this case. The plot (c) of Fig. 4.5 has been drawn for HgTe/CdTe QW HD SL
whereas the plot (d) is valid for IV-VI QW HD SL (using PbSe/PbTe as an example).
The Figs. 4.6, 4.7 and 4.8 demonstrate the plots of the EP as functions of normalized
electron degeneracy, lm thickness and normalized incident photon energy
respectively for all the cases of Fig. 4.5. The plot of the normalized magneto EP for
III-V QW effective mass HD SLs (taking HD GaAs/Ga1xAlxAs as an example) as a
Fig. 4.1 Plot of the normalized EP from a GaAs/Ga1xAlxAs and b InxGa1xAsInP QWHD
superlattices with graded interfaces as a function of inverse quantizing magnetic eld
281
Fig. 4.2 Plot of the normalized EP from a GaAs/Ga1xAlxAs and b InxGa1xAs/InP QWHD
superlattices with graded interfaces under quantizing magnetic eld as a function of normalized
electron degeneracy
superlattices with graded interfaces under quantizing magnetic eld as a function of lm thickness
function of inverse quantizing magnetic eld has been shown in the curve (a) of
Fig. 4.9. The plots (b), (c) and (d) in the same gure have been drawn for II-VI QW
effective mass HD SL (taking CdS/ZnSe HD SL as an example, IV-VI QW effective
mass HD SL (taking PbSe/PbTe HD SL as an example) and HgTe/CdTe QW HD
282
superlattices with graded interfaces under quantizing magnetic eld as a function of normalized
Fig. 4.5 Plot of the normalized EP from a CdS/ZnSe with

ko 0, b CdS/ZnSe with
ko 6 0
c HgTe/CdTe and d PbSe/PbTe QWHD superlattices with graded interfaces as a function of
inverse magnetic eld
effective mass SL respectively. The plots for normalized EP as functions of normalized electron degeneracy, lm thickness and normalized incident photon energy
for all the cases of Fig. 4.9 has respectively been drawn in the Figs. 4.10, 4.11 and
4.12. The plot (a) of Fig. 4.13 exhibits the variation of the normalized EP as a
283

ko 6 0
c HgTe/CdTe and d PbSe/PbTe QWHD superlattices with graded interfaces under quantizing
magnetic eld as a function of normalized electron degeneracy

ko 6 0
magnetic eldas a function of lm thickness
function of lm thickness for QB HD SLs with graded interfaces of (a) HgTe/CdTe,

(b) HgTe/Hg1xCdxTe (an example of III-V QB HD SLs, (c) CdS/ZnSe (an example
of II-VI QB HD SLs with k0 6 0) and (d) PbSe/PbTe (an example of IV-VI QB HD
SLs respectively. The Figs. 4.14 and 4.15 demonstrate the plots for normalized EP as
284

ko 6 0
magnetic eld as a function of normalized incident photon energy
o 6 0, (c) PbSe/
Fig. 4.9 Plot of the normalized EP from a GaAs/Ga1xAlxAs, b CdS/ZnSe with k
PbTe and (d) HgTe/CdTe QW effective mass HD superlattices as a function of inverse quantizing
magnetic eld
functions of normalized electron degeneracy and the normalized incident photon

energy respectively for all the cases of Fig. 4.13. The plot (a) of Fig. 4.16 exhibits the
variation of the normalized EP as a function of lm thickness for QB effective HD
SLs of (a) HgTe/CdTe, (b) HgTe/Hg1xCdxTe (an example of III-V HD SLs, (c)
285
Fig. 4.10 Plot of the normalized EP from a GaAs/Ga1xAlxAs, b CdS/ZnSe with

ko 6 0, c PbSe/
PbTe and d HgTe/CdTe QW effective mass HD superlattices under quantizing magnetic eld as a
function of normalized electron degeneracy
Fig. 4.11 Plot of the normalized EP from a GaAs/Ga1xAlxAs, bCdS/ZnSe with

ko 6 0, c PbSe/
CdS/ZnSe (an example of II-VI QB HD SLs with k0 6 0) and (d) PbSe/PbTe (an
example of IV-VI QB HD SLs respectively.
The Figs. 4.17 and 4.18 exhibit the plots for EP as functions of normalized
electron degeneracy and the normalized incident photon energy respectively for all
286
o 6 0, c PbSe/
Fig. 4.12 Plot of the normalized EP from a GaAs/Ga1xAlxAs, b CdS/ZnSe with k
Fig. 4.13 Plot of the normalized EP from a HgTe/CdTe b HgTe/Hg1xCdxTe, c CdS/ZnSe with
ko 6 0 and d PbSe/PbTe QB HD superlattices with graded interfaces as a function of lm
thickness
the cases of Fig. 4.16. The nature of variation of the plots in the different types of
HD SLs under different physical conditions as shown from Figs. 4.5, 4.6, 4.7, 4.8,
4.9, 4.10, 4.11, 4.12, 4.13, 4.14, 4.15, 4.16, 4.17 and 4.18 have already been
discussed in describing the plots of Figs. 4.1, 4.2, 4.3 and 4.4. Finally, it is logical
287
ko 6 0 and d PbSe/PbTe QB HD superlattices with graded interfaces as a function of normalized
electron degeneracy
ko 6 0 and d PbSe/PbTe QB HD superlattices with graded interfaces as a function of normalized
to conclude that the numerical values of the EP are totally different in all cases
which exhibit the signature of the respective band structure of HD SL under different physical conditions and the rates of variation are again totally energy spectrum dependent.
288
ko 6 0 and d PbSe/PbTe QB HD superlattices as a function of lm thickness
ko 6 0 and d PbSe/PbTe QW effective mass HD superlattices as a function of normalized electron
degeneracy
4.4 Open Research Problem
289
ko 6 0 and d PbSe/PbTe QW effective mass HD superlattices as a function of normalized incident
photon energy

(R:4:1) Investigate the influence of arbitrarily oriented alternating quantizing
magnetic eld and strain on the EP for all types of HD super-lattices whose
carrier energy spectra are described in this book.
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Part II
The EP from HD III-V Semiconductors

and Their Quantized Counter Parts
Chapter 5
The EP from HD Kane Type

Semiconductors
5.1 Introduction
With the advent of nano-photonics, there has been a considerable interest in
studying the optical processes in semiconductors and their nanostructures [1]. It
appears from the literature, that the investigations have been carried out on the
assumption that the carrier energy spectra are invariant quantities in the presence of
intense light waves, which is not fundamentally true. The physical properties of
semiconductors in the presence of light waves which change the basic dispersion
relation have relatively less investigated in the literature [212]. In this appendix we
shall study the EP in HD III-V, ternary and quaternary semiconductors on the basis
of newly formulated electron dispersion law under external photo excitation.
In Sect. 5.2.1 of the theoretical background Sect. 5.2, we have formulated the
dispersion relation of the conduction electrons of HD III-V, ternary and quaternary
materials in the presence of light waves whose unperturbed electron energy spectrum is described by the three-band model of Kane in the absence of band tailing. In
Sect. 5.2.2, we have studied the EP for all the aforementioned cases. The Sect. 5.3
contains the results and discussion for this chapter and the Sect. 5.4 contains the
open research problems.

5.2.1 The Formulation of the Electron Dispersion Law
in the Presence of Light Waves in HD III-V, Ternary
and Quaternary Semiconductors

^ of an electron in the presence of light wave characterized by
The Hamiltonian H
the vector potential ~
A can be written following [11] as
DOI 10.1007/978-3-319-11188-9_5
295
296
5 The EP from HD Kane Type Semiconductors

2

~
^
H p^ jejA 2m V~
r
5:1
in which, ^
p is the momentum operator, V~
r is the crystal potential and m is the free
electron mass.
(5.1) can be expressed as
^0
^ H
^0 H
H
5:2
where
2
^ 0 p^ V~
r
H
2m
and
^ 0 jej ~
A ^p
H
2m
5:3
^ 0 can be written as
The perturbed Hamiltonian H
^0
H

ihjej ~
Ar
2m
5:4
p
where i 1 and ^p ihr
The vector potential (~
A) of the monochromatic light of plane wave can be
expressed as
~
A A0~
s0 ~
r xt
es cos~
5:5
where A0 is the amplitude of the light wave, ~

es is the polarization vector, ~
s0 is the
momentum vector of the incident photon, ~
r is the position vector, x is the angular
^ nl0 between
frequency of light wave and t is the time scale. The matrix element of H

initial state, wl ~
k;~
r in different bands can be written as
q;~
r and nal state wn ~
D
E
^ nl0 jej n~
k~
A ^pl~
q
H
2m
5:6
Using (5.4) and (5.5), we can re-write (5.6) as

^ nl0
H
hnD

E ixt o nD i~s ~r E ixt oi
i
hjejA0
~
es
q e
q e
n~
kei~s0 ~r rl~
n~
ke 0 rl~
4m
5:7
297
The rst matrix element of (5.7) can be written as

Z
D

E
~
qun ~
q ei~q~s0 k~r i~
k;~
r ul ~
q;~
r d 3 r
n~
kei~s0 ~r rl~
Z

~
k;~
r rul ~
q;~
r d 3 r
ei~q~s0 k~r un ~
5:8
The functions un ul and un rul are periodic. The integral over all space can be
separated into a sum over unit cells times an integral over a single unit cell. It is
assumed that the wave length of the electromagnetic

wave is sufciently large so that
k is not a reciprocal lattice vector.
if ~
k and~
q are within the Brillouin zone, ~
q ~
s0 ~
Therefore, we can write (5.8) as
"
#
3 n
D

E
2p
i~
s
~
r
q
k dnl d ~
q ~
s0 ~
k
n~
k e 0 rl~
iqd ~
q ~
s0 ~
X
9
Z
=

un ~
k;~
r rul ~
q;~
r d 3 r
;
cell
9
"
#8
=

Z
2p3 <
k;~
r rul ~
q;~
r d 3 r
k
un ~
d ~
q ~
s0 ~
;
X :
5:9
cell
R
where X is the volume of the unit cell and un ~
k;~
rul ~
q;~
rd 3 r d~
q ~
kdnl 0,
since n 6 l:
The delta function expresses the conservation of wave vector in the absorption of
light wave and ~
s0 is small compared to the dimension of a typical Brillouin zone
~
and we set ~
q k.
From (5.8) and (5.9), we can write,
^ nl0 jejA0 ~
H
kd~
q ~
k cosxt
es ^pnl ~
2m
5:10
where
^
k ih
pnl ~
un rul d 3 r
un ~
k;~
r^pul ~
k;~
rd 3 r
Therefore, we can write

^ nl0 jejA0 ~
H
k
e ^pnl ~
2m
where ~
e ~
es cos xt.
5:11
298
When a photon interacts with a semiconductor, the carriers (i.e., electrons) are
generated in the bands which are followed by the inter-band transitions. For
example, when the carriers are generated in the valence band, the carriers then make
inter-band transition to the DconductionE band. The transition of the electrons within
0
0
^ nn
^ n~
the same band i.e., H
n~
k H
k is neglected. Because, in such a case, i.e.,
when the carriers are generated within the same bands by photons, are lost by
recombination within the aforementioned band resulting zero carriers.
Therefore,
D E
^ 0 n~
n~
k H
k 0
5:12
With n = c stands for conduction band and l = v stand for valance band, the
energy equation for the conduction electron can approximately be written as
I11 E
2 2
h k
2mc
jejA0
2m
2
2

~
e ^pcv k
~
Ec ~
k Ev ~
k
5:13
av
where I11 E EaE 1bE 1=cE 1; a 1=Eg0 , Eg0 is the un-perturbed

2

~
band-gap, b 1= Eg0 D ; c 1= Eg0 2D=3 , and ~
e ^pcv k
repreav
sents the average of the square of the optical matrix element (OME).
For the three-band model of Kane, we can write,
n1k Ec ~
k Ev ~
k Eg20 Eg0 h2 k2 =mr 1=2
5:14
1
where mr is the reduced mass and is given by m1
m1
r mc
v , and mv is the
effective mass of the heavy hole at the top of the valance band in the absence of any
eld.

k;~
r and u2 ~
k;~
r can be expressed
The doubly degenerate wave functions u1 ~
as [13, 14]
0

X iY 0 0
0
~
p " ck Z 0 #
r ak is # bk
u1 k;~
2
5:15
0

X iY 0 0
p # ck Z 0 "0
u2 ~
k;~
r ak is "0 bk
2
5:16
and
s is the s-type atomic orbital in both unprimed and primed coordinates, #0 indicates
the spin down function in the primed coordinates,
299

1=2
ak b Eg0 c0k 2 Eg0 d0 Eg0 d0 1=2 ;

1=2
b 6Eg0 2D=3Eg0 D=v
;

n1k Eg0 1=2
2
2
v 6Eg0 9Eg0 D 4D ; c0k
;
2n1k d0
h

i1=2
I11 E
c
n1k Ec ~
k Ev ~
k Eg0 1 2 1 m
d0 Eg20 Dv1 ; X 0 ; X 0 ; and Z0
mv
Eg
0
are the p-type atomic orbitals in the primed coordinates, "0 indicates the spin-up
function in the primed coordinates,
h
i1=2
bk qc0k ; q4D2 =3v1=2 ; ck tc0k and t 6Eg0 2D=32 =v
:
We can, therefore, write the expression for the optical matrix element (OME) as
OME
OME = ^pcv ~
k hu1 ~
k;~
rj^pju2 ~
k;~
ri
5:17
Since the photon vector has no interaction in the same band for the study of
inter-band optical transition, we can therefore write
hSj^pjSi hX j^pjX i hY j^pjY i hZ j^pjZ i 0
and
pjX i 0
hX j^pjY i hY j^pjZ i hZ j^
There are nite interactions between the conduction band (CB) and the valance
band (VB) and we can obtain

^ î P
^x
^ X î P
S P

^ ^j P
^y
^ Y ^j P
S P

^ Z ^k P
^ ^k P
^z
S P
where î; ^j and ^k are the unit vectors along x, y and z axes respectively.
It is well known [14] that

and
"0
#0
ei/=2 sin h=2

ei/=2 cos h=2
i/=2
e
sin h=2 ei/=2 cos h=2

"
#
300
3 2
X0
cos h cos /
4 Y 0 5 4 sin /
sin h cos /
Z0
2
cos h sin /
cos /
sin h sin /
32 3
X
sin h
54 Y 5
0
Z
cos h
Besides,

the spin vector can be written

0 i
0 1
1 0
and rz
; ry
:
rx
i 0
1 0
0 1
From above, we can write
as
~
S h2 ~
r
where
D
E

^ u2 ~
^
k u1 ~
k;~
rP
k;~
r
pCV ~

0

X iY 0
^ fak iS "0
p
ak iS #0 bk
"0 c k Z 0 #0 P
2

0

X iY 0
p
bk
:
#0 ck Z 0 "0
2
Using above relations, we get
D
E

^ u2 ~
^
pCV ~
k u1 ~
k;~
rP
k;~
r
0 0
0 0
bk ak 0
^ iS h# j " i
^ iS h" j " i ck ak Z 0 P
p
X iY 0 P
2

0 0 0
ak bk ^ 0
^ Z h# j " i
iS P X iY 0 h#0 j #0 i ak ck iSP

p
2
5:18

0 0
^ iS X P
^ iS iY P
^ iS
X 0 iY 0 P
Z
Z
0
^ iuY 0 Piu
^ X i X 0 P
^ S Y P
^ S
i uX 0 PS
From the above relations, for X 0 ; Y 0 and Z 0 , we get

jX 0 i cos h cos /j X i cos h sin /jY i sin hjZ i
Thus,

0
^ r1
^ S P^
^ S sin h Z P
^ S cos h sin / Y P
^ S cos h cos / X P
X P
where,
301
^r1 î cos h cos / ^j cos h sin / ^k sin h

jY 0 i sin /j X i cos /jY i 0jZ i
Thus,

0
^ r2
^ S P^
^ S 0 Z P
^ S cos / Y P
^ S sin / X P
Y P
where
^r2 î sin / ^j cos /
so that

0
^ S Pi^
^ r1 ^r2
X iY 0 P
Thus,
0 0
ak bk 0
b
k ^
^ S h" j " i akp
p X iY 0 P
Pi^r1 ^r2 h"0 j "0 i
2
2
5:19
Now since,
0 0
0

^ Y Pi^
^ r1 ^r2
^ X iY 0 i SP
^ X SP
iSP
We can write,

0 0
ak bk ^ 0
ak bk ^
0
0
0
p
iS P X iY h# j # i p Pi^r1 ^r2 h# j # i 5:20
2
2
Similarly, we get
jZ 0 i sin h cos /jXi sin h sin /jYi cos hjZi
So that,
0

^
^
^ sin h cos /î sin h sin /^j cos h^k iP^
^ r3
i Z 0 jPjS
iP
Z jPjiS
where,
^r3 î sin h cos / ^j sin h sin / ^k cos h
Thus,
302

0 0
^
^ r 3 h #0 j "0 i
ck ak Z 0 jPjiS
h# j " i ck ak iP^
5:21
Similarly, we can write,

^ 0 h#0 j "0 i ck ak iP^
^ r 3 h #0 j "0 i
ck ak iSjPjZ
5:22
Therefore, we obtain

ak bk 0
b ^ 0
k
^ h"0 j "0 i akp
p
X iY 0 jPjS
iSjPjX iY 0 h#0 j #0 i
2
2
^

P
p ak bk h#0 j #0 i ak bk h"0 j "0 i i^r1 ^r2
2
5:23
Also, we can write,

0 0

^
^ 0 h #0 j "0 i
ck ak Z 0 jPjiS
h# j " i ck ak iSjPjZ
^ k ak ck ak ^r3 h#0 j #0 i
iPc
5:24
Combining (5.23) and (5.24), we nd

^

P
^
pCV ~
k p i^r1 ^r2 bk ak h"0 j "0 i bk ak h#0 j #0 i
2

^ r3 ck ak ck ak h#0 j "0 i
iP^
5:25
From the above relations, we obtain,

"0 ei/=2 cosh=2 " ei/=2 sinh=2
#0 ei/=2 sinh=2 " ei/=2 cosh=2
5:26
Therefore,
h#0 j "0 ix sinh=2 cosh=2h" j "ix ei/ cos2 h=2h# j "ix
ei/ sin2 h=2h" j #ix sinh=2 cosh=2h# j #ix
But we know from above that
1
1
h" j "ix 0; h# j "i ; h# j "ix
2
2
and h# j #ix 0
Thus, from (5.27), we get
5:27
303
1
h#0 j "0 ix ei/ cos2 h=2 ei/ sin2 h=2
2

1
cos / i sin / cos2 h=2 cos / i sin / sin2 h=2 5:28
2
1
cos / cos h i sin /
2
Similarly, we obtain
1
h"0 j "0 iy i cos / sin / cos h
2
and h#0 j "0 iz 12 sin h
Therefore,
h#0 j "0 i îh#0 j "0 ix ^jh#0 j "0 iy ^kh#0 j "0 iz

1
cos h cos / i sin /î i cos / sin / cos h^j sin h^k
2

1
cos h cos /î sin / cos h^j sin h^k i î sin / ^j cos /
2
1
1
^r1 i^r2 ii^r1 ^r2
2
2
Similarly, we can write
h "0 j "0 i
1
1 ^
1
i sin h cos / ^j sin h sin / ^k cos h ^r3 and h#0 j #0 i ^r3
2
2
2
Using the above results and following (5.25) we can write

^

P
^
pCV ~
k p i^r1 ^r2 ak bk h"0 j "0 i bk ak h#0 j #0 i
2

^ r 3 c k ak c k ak h #0 j "0 i
iP^

^
P
ak bk bk ak
p p
^r3 i^r1 ^r2
2
2
2
^

P
^r3 i^r1 ^r2 ck ak ck ak
2
Thus,
304

^
P
bk
bk
^
k ^r3 i^r1 i^r2 ak p ck ak p ck
pCV ~
2
2
2
5:29
We can write that,

^ r3 P
^ x sin h cos /î P
^ y sin h sin /^j P
^ z cos h^k
j^r1 j j^r2 j j^r3 j 1; also ; P^
where,

^ SjPjX
^
^
^ ;
P
SjPjY
SjPjZ
Z

^ VX 0;~
^ CVX 0
^
rPu
rd 3 r P
SjPjX uC 0;~

^
^ CVZ 0
and SjPjZ
P
R
^ CVX 0 P
^ CVY 0 P
^ CVZ 0 P
^ CV 0 where P
^ CV 0 uC 0;~
Thus, P^ P
r
3
^
^
PuV 0;~
rd r P:
For a plane polarized light wave, we have the polarization vector ~
es ^k, when
the light wave vector is traveling along the z-axis. Therefore, for a plane polarized
light-wave, we have considered ~
es ^k.
Then, from (5.29) we get
h
i

^
P
~
e ^pCV ~
k B~
k cos xt
k ~
k ^r3 i^r1 ^r2 A~
2
5:30
and
A~
k ak
B~
k
bk
p
2
ak bpk2
9
ck =

ck ;
5:31
Thus,
2

2 P
h
i2

^ ^
~
k B~
k cos2 xt
e^
pcv k k ^r3 ji^r1 ^r2 j2 A~
~
2
i2
2 h
1 ^
Pz cos h A~
k B~
k cos2 xt
5:32
4

2

k for a plane polarized light-wave is given by
So, the average value of ~
e ^pcv ~
305
0 2p
1

Z
Zp
2

2 ^ 2 ~
1

2@
2
~
~
A
~
^
A
k
B
k
d/
cos
h
sin
hdh
P
e

p

cv
z
4
2
av
0
0
h
i
2
2p ^ 2 ~
Pz Ak B~
k
3
5:33
2
2 1

~
^z
^
where P
0
k

p

and
cv
2

2 m2 E E D
~

g0 g0

k ^pcv 0
4mr Eg0 23 D
5:34
We shall express A~
k and B~
k in terms of constants of the energy spectra in the
following way:
k and B~
k in (5.31) we get
Substituting ak , bk , ck and c0k in A~
1=2
q
Eg0
Eg0 d0
2
2
2
A~
k b t p

c
c
c
0k 0k
Eg0 d0 0k
Eg0 d0
2
5:35
1=2
q
Eg0
Eg0 d0
2
2
2
B~
k b t p

c
c
c
0k 0k
Eg0 d0 0k
Eg0 d0
2
5:36
n Eg0
0
1k d
in which, c20k 2n1k
h

i
h

i
E d0
n E
E d0
12 1 ng0d0
and c20k 2n1k dg00 12 1 ng0d0
1k
Substituting x n1k d0 in c20k , we can write,
1k

q
Eg0
1
Eg0 d0
1 Eg0 d0
~
1
Ak b t p

4 Eg0 d0
x
Eg0 d0 2
2
1=2
Eg0 d0
Eg0 d0
1
1
x
x
Thus,

b
q
2a0 a1 1=2
t p 1
2
A~
k
2
x
x
2
where
1k
306
a0 Eg20 d02 Eg0 d0 1

2
and a1 Eg0 d0 .
After tedious algebra, one can show that
#1=2

1=2 "
0
b
q
1
1
1
E
g
0
0
t p Eg0 d

A~
k
2
n1k d0 Eg0 d0
n1k d0 Eg0 d0 2
2
5:37
Similarly, from (5.36), we can write,

q
Eg0
1
Eg0 d0
1 Eg0 d0
~
1
Bk b t p

4 Eg0 d0
x
Eg0 d0 2
2
1=2
Eg0 d0
Eg0 d0
1
1
x
x
So that, nally we get,

b
q
Eg0 d0
~
t p 1
Bk
2
n1k d0
2
5:38
Using (5.33), (5.34), (5.37) and (5.38), we can write
jejA0
2m

2

~
2 ~
e^
pcv k

2 b 2
jejA0 2 2p ~
q 2

t p
k ^pcv 0
3
2m
4
2
Ec ~
k Ev ~
k

0
1
Eg d
1 0
Eg0 d0
n1k
n1k d0
#1=2 92

1=2 "
=
0
1
1
1
Eg0 d
0
0
0
2
0
;
n1k d Eg0 d
n1k d Eg0 d
av
5:39
Following Nag [12], it can be shown that
A20
Ik2
p
2p2 c3 esc e0
5:40
where, I is the light intensity of wavelength k; e0 is the permittivity of free space and
c is the velocity of light. Thus, the simplied electron energy spectrum in III-V,
307
ternary and quaternary materials in the presence of light waves can approximately
be written as
h2 k 2
b0 E; k
2mc
5:41
where b0 E; k I11 E h0 E; k;

jej2
Ik2 Eg0 Eg0 D b2
q 2 1
p
h0 E; k
t
96mr pc3 esc e0 Eg0 23 D 4

2 /0 E
(

1=2
0
Eg0 d
1
1
0
1

d
E
g0
/0 E d0
/0 E d0 Eg0 d0
"
#1=2 92
=
1
Eg0 d0

;
/0 E d0 Eg0 d0 2

1=2
I11 E
c
and /0 E Eg0 1 2 1 m
mv
Eg
0
Thus, under the limiting condition ~

k ! 0, from (5.41), we observe that E 0
and is positive. Therefore, in the presence of external light waves, the energy of the
electron does not tend to zero when ~
k ! 0, where as for the un-perturbed three
2 2

k ! 0. As the
band model of Kane, I11 E h k =2mc in which E ! 0 for ~
conduction band is taken as the reference level of energy, therefore the lowest
positive value of E for ~
k ! 0 provides the increased band gap (Eg) of the
semiconductor due to photon excitation. The values of the increased band gap can
be obtained by computer iteration processes for various values of I and
respectively.
Special Cases:
(1) For the two-band model of Kane, we have 0. Under this condition,
2 2
I11 E ! E1 aE h2mkc . Since, 1, t 1, 0, 0 for 0,
from (5.41), we can write the energy spectrum of III-V, ternary and quaternary
materials in the presence of external photo-excitation whose unperturbed
conduction electrons obey the two band model of Kane as
h2 k2
s0 E; k
2mc
where s0 E; k E1 aE B0 E; k;
5:42
308
jej2 Ik2 Eg0

1
p
384pc3 mr esc e0 /1 E

2

Eg0
1
1

1
;
Eg0
/1 E Eg0
/1 E

1=2
2mc
/1 E Eg0 1
aE1 aE
:
mr
B0 E; k
(2) For relatively wide band gap semiconductors, one can write, a 0, b 0,
c 0 and I11(E) E.
Thus, from (5.42), we get,
h2 k 2
q0 E; k
2mc
5:43
h
i3=2
2 2
Ik
p 1 2mc aE
:
where q0 E; k E 96pcjej
3m
mr
e
e
r
sc 0
5.2.2 The EP in the Presence of Light Waves in HD III-V,

Ternary and Quaternary Semiconductors
The (5.40), (5.41) and (5.42) can approximately be written as
h2 k2
Uk I11 E Pk
2mc
5:44
h2 k2
t1k E t2k E2 dk
2mc
5:45
h2 k 2
t1k E dk
2mc
5:46a
and
where Uk 1 hk ; hk CA0 tk BJAk ; C0
jej2 Ik2 Eg0 Eg0 D b2

p
96mr pc3 esc e0 Eg0 23D 4
1 pq22
B 1
309
m
2B
BCk
; Gk

0 3
mV
A
d0
A d
Ck Eg0 d0 1 Eg0 d0 Eg0 d0 2 A d0 1

p
C0
Jk ; Jk Dk 2Eg0 d0 fk ;
Pk
A
2Eg0 d0
1
1
Dk 1
Ck ;
; fk
0
2
0
A d
A d
Eg0 d0 2
t1k 1
3mc
1
jej2 Ik2
adk ; a
; dk
p and t2k at1k
Eg0
mr
96mr pc3 esc e0
Under the condition of heavy doping, following the methods as developed in

Chap. 1, the HD dispersion relations in this case in the presence of light waves can
be written as
h2 k 2
T1 E; gg ; k
2mc
5:46b
h2 k 2
T2 E; gg ; k
2mc
5:47
h2 k2
T3 E; gg ; k
2mc
5:48
where
T1 E; gg ; k Uk T31 E; gg iT32 E; gg Pk
T2 E; gg ; k t1k c3 E; gg t2k 2h0 E; gg 1 ErfE=gg 1 dk
and
T3 E; gg ; k t1k c3 E; gg dk
The EEM can be expressed in this case by using (5.46a, 5.46b), (5.47) and (5.48)
as
m EFHDL ; gg ; k mc Real part of T1 EFHDL ; gg ; k0
5:49
m EFHDL ; gg ; k mc T2 EFHDL ; gg ; k0
5:50
m EFHDL ; gg ; k mc T3 EFHDL ; gg ; k0
5:51
310

n0
3
3
gv 2mc 2
Real part ofT1 EFHDL ; gg ; k2
3p2 h2
5:52
3
3
gv 2mc 2
T2 EFHDL ; gg ; k2
2
2
3p
h
5:53
3
3
gv 2mc 2
n0 2
T3 EFHDL ; gg ; k2
2
3p
h
5:54
n0
where EFHDL is the Fermi energy in HD III-V semiconductors in the presence of

light waves as measured from the age of the unperturbed conduction band in the
vertically upward direction.
The velocity along z direction and the density of states function in this case for
HD optoelectronic Kane type materials under intense light waves whose conduction
electrons in the absence of perturbation obey the three band model of Kane can
respectively be written as
vz E01
NE01 4pgv
r
1=2
2 T1 E10 ; gg ; k
mc T10 E01 ; gg ; k
2mc 3=2 q
T1 E01 ; gg ; kT10 E01 ; gg ; k

2
h
5:55
5:56
where E01 E E01HD ; E01HD n1 W hm; n1 is the root of the equation

T1 n1 ; gg ; k 0
5:57
JLHD
Za
4pa0 emc gm
Real part of
h3
T1 E01 ; gg ; kf EdE01
5:58
E01HD
Similarly the EP for perturbed two band model of Kane and that of parabolic
energy bands can respectively be expressed as
JLHD
4pa0 emc gm
h3
Za
E02HD
and
5:59
JLHD
311
4pa0 emc gm
h3
Za
5:60
E03HD
where E02 E E02HD ; E02HD n2 W hm; n2 is the root of the equation

T2 n2 ; gg ; k 0
5:61
and where E30 E E03HD ; E03HD n3 W hm; n3 is the root of the equation
T3 n3 ; gg ; k 0:
5:62

Using the appropriate equations, the normalized EP from HD n-Hg1xCdxTe has
been plotted as functions of normalized I0 (for a given wavelength and considering
red light for which is about 640 nm), (assuming I0 = 10 nWm2) and the
normalized electron degeneracy at T = 4.2 K in accordance with the perturbed three
and two band models of Kane and that of perturbed parabolic energy bands in
Figs. 5.1, 5.2 and 5.3 respectively. The Figs. 5.4, 5.5 and 5.6 exhibit all the
aforementioned cases for HD n-In1xGaxAsyP1y lattice matched to InP
respectively.
It appears that the J increases with the increasing electron degeneracy in
accordance with all the band models. The combined influence of the energy band
constants on the EP from ternary and quaternary materials can easily be assessed
from all the gures. It appears that the EP decreases with increasing light intensity
for all the materials and also decreases as the wavelength shifts from violet to red.
The influence of light is immediately apparent from all the plots, since the EP
depends strongly on the light intensity for all types of perturbed band models,
which is in direct contrast with that for the bulk specimens of the said compounds
whose formulations depend on the general idea that the band structure is an
invariant quantity in the presence of external photo-excitation together with the fact
that the physics of EP is being converted mathematically by using the lower limit of
integration as E0 as often used in the literature. The dependence of JL on light
intensity and wavelength reflects the direct signature of the light wave on the band
structure dependent physical properties of electronic materials in general in the
presence of external photo-excitation and the photon assisted transport for the
corresponding HD optoelectronic semiconductor devices. Although JL tends to
decrease with the increasing intensity and the wavelength but the rate of increase is
totally band structure dependent.
312
Fig. 5.1 Plot of the normalized EP from HD n-Hg1xCdxTe as a function of normalized light
intensity in which the curves (a), (b) and (c) represent the perturbed three and two band models of
Kane together with parabolic energy bands respectively
Fig. 5.2 Plot of the normalized EP from HD n-Hg1xCdxTe as a function of wavelength for all
cases of Fig. 5.1
313
Fig. 5.3 Plot of the normalized EP from HD n-Hg1xCdxTe as a function of normalized electron
degeneracy for all cases of Fig. 5.1
Fig. 5.4 Plot of the normalized EP from HD In1xGaxAsyP1y lattice matched to InP as a function
of normalized light intensity in which the curves (a), (b) and (c) represent the perturbed three and
two band models of Kane together with parabolic energy bands respectively
314
of wavelength for all cases of Fig. 5.4
of normalized electron degeneracy for all cases of Fig. 5.4
It is worth remarking that our basic Eq. (5.46b) covers various materials having
different energy band structures. Under certain limiting conditions, all the results of
the EP for different materials having various band structures lead to the well-known
315
expression of the same for wide-gap materials having simplied parabolic energy
bands. This indirect test not only exhibits the mathematical compatibility of the
formulation but also shows the fact that the presented simple analysis is a more
generalized one, since well known result can be obtained under certain limiting
conditions of the generalized expressions.
It is worth remarking that the influence of an external photo-excitation is to
change radically the original band structure of the material. Because of this change,
the photon eld causes to increase the band gap of semiconductors. We have
proposed two experiments for the measurement of band gap of HD semiconductors
under photo-excitation in Chap. 9 in this context.
We have not considered other types of optoelectronic and III-V materials and
other external variables for the purpose of concise presentation. Besides, the
influence of energy band models and the various band constants on the EP for
different materials can also be studied from all the gures of this chapter. The
numerical results presented in this chapter would be different for other materials but
the nature of variation would be unaltered. The theoretical results as given here
would be useful in analyzing various other experimental data related to this phenomenon. Finally, it appears that this theory can be used to investigate the thermoelectric power, the Debye screening length, the magnetic susceptibilities, the
Burstien Moss shift, plasma frequency, the Hall coefcient, the specic heat and
other different transport coefcients of modern HD optoelectronic devices operated
in the presence of light waves.

(R:5:1) Investigate the EP in the presence of intense external light waves for all the
HD materials whose respective dispersion relations of the carriers in the
absence of any eld are given in R.1.1 of Chap. 1.
(R:5:2) Investigate the EP for the heavilydoped semiconductors in the presences
of Gaussian, exponential, Kane, Halperian, Lax and Bonch-Burevich types
of band tails [16] for all systems whose unperturbed carrier energy spectra
are dened in (R.1.1) in the presence of external light waves.
(R:5:3) Investigate the EP in the presence of external light waves for bulk specimens of the HD negative refractive index, organic, magnetic and other
advanced optical materials in the presence of an arbitrarily oriented
(R:5:4) Investigate all the appropriate HD problems of this chapter for a Dirac
electron.
many body, broadening and hot carrier effects respectively.
(R:5:6) Investigate all the appropriate problems of this chapter by removing all the
mathematical approximations and establishing the respective appropriate
uniqueness conditions.
316
References
1. P.K. Basu, Theory of Optical Process in Semiconductors, Bulk and Microstructures (Oxford
University Press, Oxford, 1997)
2. K.P. Ghatak, S. Bhattacharya, S. Bhowmik, R. Benedictus, S. Chowdhury, J. Appl. Phys. 103,
094314 (2008)
3. K.P. Ghatak, S. Bhattacharya, J. Appl. Phys. 102, 073704 (2007)
4. K.P. Ghatak, S. Bhattacharya, S.K. Biswas, A. De, A.K. Dasgupta, Phys. Scr. 75, 820 (2007)
5. P.K. Bose, N. Paitya, S. Bhattacharya, D. De, S. Saha, K.M. Chatterjee, S. Pahari, K.P.
Ghatak, Quantum Matter 1, 89 (2012)
6. K.P. Ghatak, S. Bhattacharya, A. Mondal, S. Debbarma, P. Ghorai, A. Bhattacharjee,
Quantum Matter 2, 25 (2013)
7. S. Bhattacharya, D. De, S. Ghosh, J.P. Bannerje, M. Mitra, B. Nag, S. Saha, S.K. Bishwas, M.
Paul, J. Comput. Theo. Nanosci. 7, 1066 (2010)
8. K.P. Ghatak, S. Bhattacharya, S. Pahari, S.N. Mitra, P.K. Bose, J. Phys. Chem. Solids 70, 122
(2009)
9. S. Bhattacharya, D. De, R. Sarkar, S. Pahari, A. De, A.K. Dasgupta, S.N. Biswas, K.P.
Ghatak, J. Comput. Theo. Nanosci. 5, 1345 (2008)
10. S. Mukherjee, D. De, D. Mukherjee, S. Bhattacharya, A. Sinha, K.P. Ghatak, Phys. B 393, 347
(2007)
11. K. Seeger, Semiconductor Physics, 7th edn. (Springer, Heidelberg, 2006)
12. B.R. Nag, Physics of Quantum Well Devices (Kluwer Academic Publishers, The Netherlands,
2000)
13. R.K. Pathria, Statistical Mechanics, 2nd edn. (Butterworth-Heinmann, Oxford, 1996)
14. S. Bhatttacharya, K.P. Ghatak, Fowler-Nordheim Field Emission, vol. 170, Springer Series in
Solid-State Sciences (Springer, Germany, 2012)
Chapter 6
The EP from HD Kane Type Materials

Under Magnetic Quantization
6.1 Introduction
In this chapter, the EP under magnetic quantization in HD Kane type materials has
been investigated in the presence of external photo-excitation whose conduction
electrons obeys the energy wave-vector dispersion relations as given by (5.46b),
(5.47) and (5.48) respectively. The Sect. 6.2 contains the theoretical background.
The dependence of the magneto EP from HD n-Hg1xCdxTe and n-In1xGaxAsyP1y
lattice matched to InP on the inverse quantizing magnetic eld, the carrier concentration, the intensity of light and the wavelength has been discussed in Sect. 6.3.
The Sect. 6.4 presents open research problems pertinent to this chapter.

Using (5.46b), the magneto-dispersion law, in the absence of spin, for HD III-V,
ternary and quaternary semiconductors, in the presence of photo-excitation, whose
unperturbed conduction electrons obey the three band model of Kane, is given
by [1]

T1 E; gg

h2 kz2
1
n h x0
2
2mc
6:1
Using (6.1), the DOS function in the present case can be expressed as
#
p nmax "

1=2

gv jej 2mc X

0

1
DB E; gg ; k
T
E;
g
;
k
T
E;
g
;
k

n
E

E
h

x
1
1
0
nl1
g
g
2
h2 n0
2p2
6:2
DOI 10.1007/978-3-319-11188-9_6
317
318
6 The EP from HD Kane Type Materials Under Magnetic Quantization
where Enl1 is the Landau sub-band energies in this case and is given as

1
T1 Enl1 ; gg ; k n hx0
2
6:3

0
m EFHDLB ; gg ; k mc Real part of T1 EFHDLB ; gg ; k
6:4
where EFHDIB is the Fermi energy under quantizing magnetic eld in the presence of
light waves as measured from the edge of the conduction band in the vertically
upward direction in the absence of any quantization. Combining (6.2) with the
Fermi-Dirac occupation probability factor and using the generalized Sommerfelds
lemma [1], the electron concentration can be written as
n0
p nmax

gv jej 2mc X
M13 EFHDLB ; gg ; k N13 EFHDLB ; gg ; k
2
2
p h
n0
6:5

1=2

M13 EFHDLB ; gg ; k Real part of T1 EFHDLB ; gg ; k n 12 hx0
,
s

P
and N13 EFHDLB ; gg ; k
LrM13 EFHDLB ; gg ; k:
where
r1

J
nmax
X
a0 e2 BkB T
Real
part
of
F0 g61HDLB
2p2 h2
n0
6:6
where g61HDLB kB T 1 EFHDLB En11 W hm:

(i) Using (5.47), the magneto-dispersion law, in the absence of spin, for HD IIIV, ternary and quaternary semiconductors, in the presence of photo-excitation, whose unperturbed conduction electrons obey the two band model of
Kane, is given by

h2 kz2
1
T2 E; gg n hx0
6:7
2
2mc
#
p nmax "

1=2

gv jej 2mc X

0

1
h x0
DB E; gg ; k
T2 E; gg ; k
T2 E; gg ; k n
H E Enl2
2
2p2 h2 n0
6:8
319

1
6:9
2

0
m EFHDIB ; gg ; k mc T2 EFHDIB ; gg ; k
6:10
where EFHDLB is the Fermi energy under quantizing magnetic eld in the
presence of light waves as measured from the edge of the conduction band in
the vertically upward direction in the absence of any quantization.
using the generalized Sommerfelds lemma, the electron concentration can
be written as
n0
p nmax

gv jej 2mc X
M
E
;
g
;
k
N
E
;
g
;
k
23
FHDLB
23
FHDLB
g
g
2
p2 h
n0
6:11

1=2
where
M23 EFHDLB ; gg ; k T2 EFHDLB ; gg ; k n 12 hx0
s

P

N23 EFHDLB ; gg ; k
Lr M23 EFHDLB ; gg ; k :
and
r1

J
nmax
a0 e2 BkB T X
F0 g62HDLB
2p2 h2 n0
6:12
where g62HDLB kB T 1 EFHDLB En12 W hm:

(ii) Using (5.48), the magneto-dispersion law, in the absence of spin, for HD IIIV, ternary and quaternary semiconductors, in the presence of photo-excitation, whose unperturbed conduction electrons obey the parabolic energy
bands, is given by

h2 kz2
1
T3 E; gg n hx0
6:13
2
2mc
#
p nmax "

1=2

gv jej 2mc X

0
1
DB E; gg ; k
T3 E; gg ; k
T3 E; gg ; k n hx0
H E Enl2
2
2p2 h2 n0
6:14
320

1
2
6:15

0
m EFHDIB ; gg ; k mc T3 EFHDIB ; gg ; k
6:16
where EFHDLB is the Fermi energy under quantizing magnetic eld in the
presence of light waves as measured from the edge of the conduction band in
the vertically upward direction in the absence of any quantization.
using the generalized Sommerfelds lemma, the electron concentration can
be written as
p nmax

gv jej 2mc X
n0
M33 EFHDLB ; gg ; k N33 EFHDLB ; gg ; k
2
2
p h
n0

1=2

where
M33 EFHDLB ; gg ; k T3 EFHDLB ; gg ; k n 12 hx0
s

P

N33 EFHDLB ; gg ; k
LrM33 EFHDLB ; gg ; k :
6:17
and
r1

J
nmax
a0 e2 BkB T X
F0 g63HDLB
2p2 h2 n0
6:18
where g63HDLB kB T1 EFHDLB En13 W hm:

Using the appropriate equations we have plotted the normalized magneto EP from
HD n-Hg1xCdxTe versus inverse quantizing magnetic eld in accordance with the
perturbed three and two band models of Kane and that of perturbed parabolic energy
bands as shown in Fig. 6.1. The Figs. 6.2, 6.3 and 6.4 exhibit the variation of the
aforementioned quantity from HD n-Hg1xCdxTe as functions of the normalized
electron degeneracy, the normalized intensity of light and wavelength at T = 4.2 K
respectively. The Figs. 6.5, 6.6, 6.7 and 6.8 represent the said variations of EP under
magnetic quantization from HD n-In1xGaxAsyP1y lattice matched to InP.
321
Fig. 6.1 Plot of the normalized EP as a function of inverse magnetic eld from HD n-Hg1xCdxTe
in which the curves (a), (b) and (c) represent the perturbed three and two band models of Kane
together with parabolic energy bands respectively
Fig. 6.2 Plot of the normalized EP as a function of normalized carrier degeneracy from HD n-Hg1
xCdxTe in which the curves (a), (b) and (c) represent the perturbed three and two band models of
Kane together with parabolic energy bands respectively
322
Fig. 6.3 Plot of the normalized EP as a function of normalized light intensity from HD
n-Hg1xCdxTe in which the curves (a), (b) and (c) represent the perturbed three and two band
models of Kane together with parabolic energy bands respectively
Fig. 6.4 Plot of the normalized EP as a function of wavelength from HD n-Hg1xCdxTe in which
the curves (a), (b) and (c) represent the perturbed three and two band models of Kane together with
parabolic energy bands respectively
323
Fig. 6.5 Plot of the normalized EP as a function of inverse magnetic eld from HD
In1xGaxAsyP1y lattice matched to InP in which the curves (a), (b) and (c) represent the
perturbed three and two band models of Kane together with parabolic energy bands respectively
Fig. 6.6 Plot of the normalized EP as a function of normalized carrier degeneracy from HD
In1xGaxAsyP1y lattice matched to InP in which the curves (a), (b) and (c) represent the perturbed
three and two band models of Kane together with parabolic energy bands respectively
324
Fig. 6.7 Plot of the normalized EP as a function of normalized light intensity from HD
In1xGaxAsyP1y lattice matched to InP in which the curves (a), (b) and (c) represent the perturbed
three and two band models of Kane together with parabolic energy bands respectively
Fig. 6.8 Plot of the normalized EP as a function of wavelength from HD In1xGaxAsyP1y lattice
matched to InP in which the curves (a), (b) and (c) represent the perturbed three and two band
models of Kane together with parabolic energy bands respectively
325
It appears from Figs. 6.1 and 6.5 that the EP under magnetic quantization
oscillates with inverse quantizing magnetic eld and the numerical values are
different in various cases which is the direct signature of the band structure. It may
be noted the origin of the oscillation is the same as that of SdH oscillations. From
Figs. 6.2 and 6.6, we observe that the EP oscillates with electron degeneracy,
although the nature of oscillation is different. Figures 6.3 and 6.7 exhibits the fact
that the normalized magneto EP decreases with increasing intensity and the slopes
directly reflects the influence of energy band constants.
The Figs. 6.4 and 6.8 reflect the fact that the magneto EP decreases with
increasing wavelength. Finally, we note that the form of the expression of the said
physical quantity in this case as given by (6.10)(6.12) is generalized where the
Landau energy and the Fermi energy under magnetic eld are the two band
structure dependent quantities.

Investigate the following open research problems in the presence of external photoexcitation which changes the band structure in a fundamental way together with the
proper inclusion of the electron spin, the variation of work function and the
broadening of Landau levels respectively for appropriate problems.
(R:6:1) Investigate the multi-photon EP from all the HD materials whose
unperturbed dispersion relations are given in (R.1.1) of Chap. 1 in the
presence of arbitrarily oriented photo-excitation and quantizing magnetic
eld respectively.
presence of an arbitrarily oriented non-quantizing non-uniform electric
eld, photo-excitation and quantizing magnetic eld respectively.
presence of an arbitrarily oriented non-quantizing alternating electric
eld, photo-excitation and quantizing magnetic eld respectively.
presence of an arbitrarily oriented non-quantizing alternating electric
eld, photo-excitation and quantizing alternating magnetic eld
respectively.
presence of an arbitrarily oriented photo-excitation and crossed electric
and quantizing magnetic elds respectively.
326
(R:6:6) Investigate the multi-photon EP for arbitrarily oriented photo-excitation

and quantizing magnetic eld from the heavily-doped materials in the
presence of Gaussian, exponential, Kane, Halperin, Lax and BonchBruevich types of band for all materials whose unperturbed carrier energy
spectra are dened in Chap. 1.
and quantizing alternating magnetic eld for all the cases of R.6.6.
and non-quantizing alternating electric eld and quantizing magnetic eld
for all the cases of R.6.6.
and non-uniform alternating electric eld and quantizing magnetic eld
and crossed electric and quantizing magnetic elds for all the cases of
R.6.6.
(R:6:11) Investigate the multi-photon EP from HD negative refractive index,
organic, magnetic, heavily doped, disordered and other advanced optical
materials in the presence of arbitrary oriented photo-excitation and
quantizing magnetic eld.
(R:6:12) Investigate the multi-photon EP in the presence of arbitrary oriented
photo-excitation, quantizing magnetic eld and alternating non-quantizing electric eld for all the problems of R.6.11.
photo-excitation, quantizing magnetic eld and non-quantizing non-uniform electric eld for all the problems of R.6.11.
photo-excitation, alternating quantizing magnetic eld and crossed alternating non-quantizing electric eld for all the problems of R.6.11.
(R:6:15) Investigate all the problems from R.6.1 to R.6.14 by removing all the
Reference
1. S. Bhattacharya, K.P. Ghatak, Effective Electron Mass in Low-Dimensional Semiconductors,
vol. 167, Springer Series in Materials Science (Springer, Germany, 2013)
Chapter 7
The EP from QWs, NWs and QBs of HD

Optoelectronic Materials
7.1 Introduction
In this chapter, in Sects. 7.2.1, 7.2.2 and 7.2.3 of theoretical background, the EP from
QWs, NWs and QBs of HD optoelectronic materials has been studied, whose bulk
conduction electrons are dened by the dispersion relations as given by (5.46b),
(5.47) and (5.48) respectively. In Sect. 7.2, the EP from the afore-mentioned HD
quantum conned materials has been investigated with respect to various external
variables and Sect. 7.3 includes the result and discussions. The Sect. 7.4 presents
open research problems pertinent to this chapter.

7.2.1 The EP from HD QWs of Optoelectronic Materials
The dispersion relation of the 2D electrons in QWs of HD optoelectronic materials,
the conduction electrons of whose bulk samples are dened by the dispersion
relations as given by (5.46b), (5.47) and (5.48) can, respectively, be expressed
following (7.1) as
kx2
ky2
kx2
ky2

2mc T1 E; gg ; k
h2

2mc T2 E; gg ; k
h2

pnz71 2

dz
7:1

pnz72 2

dz
7:2

DOI 10.1007/978-3-319-11188-9_7
327
328
7 The EP from QWs, NWs and QBs of HD Optoelectronic Materials
kx2
ky2

2mc T3 E; gg ; k
h2

pnz73 2
dz
7:3
where nz7J J 1; 2; 3 is the size quantum number.

The 2D electron statistics assumes the form

n2DL

nX
z71max
mc gv
/71 EF2DL ; nz71 /72 EF2DL ; nz71
Real
part
of
2
p
h
nz71 1
n2DL

n2DL
mc gv
ph2
mc gv
ph2
nX
z72max
7:4
/73 EF2DL ; nz72 /74 EF2DL ; nz72
7:5
/75 EF2DL ; nz73 /76 EF2DL ; nz73
7:6
nz72 1
nX
z73max
nz73 1
where EF2DL is the Fermi energy in HDQWs in the presence of lightwaves as

measured from the edge of the conduction band in the vertically upward direction in
the absence of any quantization,
"

#

2mc
pnz71 2
/71 E2DF ; nz71
T1 EF2DL ; gg ; k
;
dz
h2
/72 EF2DL ; nz71
s0
X
Lr/71 EF2DL ; nz71 ;
r1
"

#

2mc
pnz72 2
T2 EF2DL ; gg ; k
/73 EF2DL ; nz72
;
dz
h2
/74 EF2DL ; nz72
s0
X
Lr/73 EF2DL ; nz72 ;
r1
"

#

2mc
pnz73 2
T3 EF2DL ; gg ; k
/75 EF2DL ; nz73
; and
dz
h2
/76 EF2DL ; nz73
s0
X
Lr/75 EF2DL ; nz73
r1
The velocity of the electron in the nz71 th; nz72 th and nz73 th sub bands for the 2D
electron energy spectra as given by (7.17.3) can respectively be written as

tz Enz71
m 1=2
c
2
2q

3
T1 Enz71 ; gg ; k
4
5
T10 Enz71 ; gg ; k
7:7
329

tz Enz72
tz Enz73
m 1=2
c
2
m 1=2
c
2
2q

3
T2 Enz72 ; gg ; k
4
5
T20 Enz72 ; gg ; k
2q

3
T3 Enz73 ; gg ; k
4
5
T30 Enz73 ; gg ; k
7:8
7:9
where the sub-band energies Enz71 ; Enz72 and Enz73 are respectively dened through
the following equations

h2 pnz71 2
T1 Enz71 ; gg ; k
2mc
dz

T2 Enz72 ; gg ; k
h2
2mc

pnz72
dz
7:10
2
7:11
and

T3 Enz73 ; gg ; k
h2
2mc

pnz73
dz
2
7:12
The respective expressions of the photoemission are given by

J2DL
a0 gv e mc 1=2
Real part of
ph2 dz 2
q
2

3
nX
z71max
T1 Enz71 ; gg ; k
4
5/71 EF2DL ; nz71 /72 EF2DL ; nz71
T10 Enz71 ; gg ; k
nz71
7:13
min
where nz71min
J2DL

1=2
dz p
2mc
:
T1 W ht; gg ; k
h
p
a0 gv e mc 1=2
ph2 dz 2
2q

3
nX
z72max
T2 Enz72 ; gg ; k
4
5/73 EF2DL ; nz72 /74 EF2DL ; nz72
0 E
T
;
g
;
k
n
g
z72
2
nz72
min
where nz72min
q
dz p

2mc
T2 W ht; gg ; k and
h
p
7:14
330
J2DL
a0 gv e mc 1=2
ph2 dz 2
2q

3
nX
z73max
T3 Enz73 ; gg ; k
4
5/75 EF2DL ; nz73 /72 EF2DL ; nz73
0 E
T
;
g
;
k
n
g
z73
3
nz73
7:15
min
where nz73min

1=2
dz p
2mc
:
T3 W ht; gg ; k
h
p
7.2.2 The EP from HD NWs of Optoelectronic Materials

The dispersion relations of the 1D electrons in NWs of HD optoelectronic materials
in the presence of light waves can be expressed from (7.17.3) as
ky2
ky2
ky2

2mc T1 E; gg ; k
h2

2mc T2 E; gg ; k
h2

2mc T3 E; gg ; k
h2
2

pnx71 2

dx
7:16
pnz72
dz
2

pnx72 2

dx
7:17
pnz73
dz
2

pnx73 2

dx
7:18
pnz71

dz

where nx7J J 1; 2; 3 is the size quantum number.

The electron concentration per unit length are respectively given by
n1DL
p
2gv 2mc
Real part of
ph
nX
x71max nX
z71max
/77 EF1DL ; nx71 ; nz71 /78 EF1DL ; nx71 ; nz71
7:19
nx71 1 nz71 1
n1DL
p nx72max nX
z72max
/79 EF1DL ; nx72 ; nz72
2gv 2mc X
ph
nx72 1 nz72 1 /80 EF1DL ; nx72 ; nz72
7:20
p nx73max nz73max
2mc X X /81 EF1DL ; nx73 ; nz73
ph
n 1 n 1 /82 EF1DL ; nx73 ; nz73
7:21
n1DL
2gv
x73
z73
where EF1DL is the Fermi energy in NWs in the presence of light waves as measured
from the edge of the conduction band in the vertically upward direction in the
absence of any quantization,
331

1=2
;
/77 EF1DL ; nx71 ; nz71 T1 EF1DL ; gg ; k G71 nx71 ; nz71
"
#

h2
pnx7i 2
pnz7i 2
G7i nx7i ; nz7i
;
2mc
dx
dz
/78 EF1DL ; nx71 ; nz71
s0
X
Lr/77 EF1DL ; nx71 ; nz71 ;
r1

1=2
;
/79 EF1DL ; nx72 ; nz72 T2 EF1DL ; gg ; k G72 nx72 ; nz72
s
X
/80 EF1DL ; nx72 ; nz72
Lr/79 EF1DL ; nx72 ; nz72 ;
r1
/81 EF1DL ; nx73 ; nz73 q0 EF1DL ; k G73 nx73 ; nz73 1=2 and
s
X
Lr/81 EF1DL ; nx73 ; nz73 :
/82 EF1DL ; nx73 ; nz73
r1
The generalized expression of photo current in this case is given by

IL
nx7imax nX
z7imax
a0 egv kB T X
F0 g7i
ph
n 1 n 1
x7i
7:22a
z7i
EF1DL E7i Wht

0
and E7i are the sub-band energies in this case and are
where, g7i
kB T
dened through the following equations
0

9
T1 E71 ; gg ; k G71 nx71 ; nz71 >
>
>
>
=
0

7:22b
T2 E72 ; gg ; k G72 nx72 ; nz72
>
>
0

>
>
T3 E73 ; gg ; k G73 nx73 ; nz73 ;
Real Part of the (7.22a and 7.22b) should be used for computing the EP from
NWs of HD optoelectronic materials whose unperturbed energy band structures are
dened by the three-band model of Kane [1].
7.2.3 The EP from QB of HD Optoelectronic Materials

The dispersion relations of the electrons in QBs of HD optoelectronic materials in
the presence of light waves can respectively be expressed from (7.167.18) as

2mc T1 EQ1 ; gg ; k
h

H71 nx71 ; ny71 ; nz71
7:23
332

2mc T2 EQ2 ; gg ; k
h
h

2mc T3 EQ3 ; gg ; k

H72 nx72 ; ny72 ; nz72
7:24

H73 nx73 ; ny73 ; nz73
7:25

2
where EQi is the totally quantized energy and H7i nx7i ; ny7i ; nz7i pndx7i
x
2 2
pny7i
pndz7i
:
dy
z
The electron concentration can, in general, be written as

n0DL
E
2gv
dx dy dz
nX
y7imax nX
x7imax nX
z7imax
F1 g7i0D
7:26
nx7i 1 ny7i 1 nz7i 1
E
Qi
where g7i0D F0DL
and EF0DL is the Fermi energy in QBs of HD optoelectronic
kB T
materials in the presence of lightwaves as measured from the edge of the conduction band in the vertically upward direction in the absence of any quantization.
Real Part of the (7.26) should be used for computing the carrier density from QBs
of HD optoelectronic materials whose unperturbed energy band structures are
dened by the three-band model of Kane.
The photo-emitted current densities in this case are given by the following
equations
J0DL
J0DL
a0 egv mc 1=2

Real part of
dx dy dz 2
2q

3
nX
y71max nX
z71max
x71max nX
T1 Enz71 ; gg ; k
4
5F1 g710D
T10 Enz71 ; gg ; k
nx71 1 ny71 1 nz71min
7:27
a0 egv mc 1=2

dx dy dz 2
2q

3
nX
y72max nX
z72max
x72max nX
T2 Enz72 ; gg ; k
4
5F1 g720D
T20 Enz72 ; gg ; k
7:28
a0 egv mc 1=2

dx dy dz 2
2q

3
nX
y73max nX
z73max
x73max nX
T3 Enz73 ; gg ; k
4
5F1 g730D
T30 Enz73 ; gg ; k
7:29
and
J0DL
333

Using the numerical values of the energy band constants the normalized EP has
been plotted from QWs of HD n-Hg1xCdxTe, under external photo-excitation
whose band structure follows the perturbed HD three [using (7.13) and (7.4)] and
HD two [using (7.14) and (7.5)] band models of Kane and that of the perturbed HD
parabolic [using (7.15) and (7.6)] energy bands as shown by curves (ac) of Fig. 7.1
as functions of lm thickness. The plots of the Figs. 7.2, 7.3 and 7.4 exhibit the
dependence of the normalized EP on the normalized electron degeneracy, normalized intensity and wavelength respectively for all cases of Fig. 7.1. The variations of the normalized EP from QWs of HD
n-In1xGaxAsyP1y lattice matched to InP as functions of lm thickness, normalized carrier degeneracy, normalized incident light intensity and wavelength
respectively have been drawn in Figs. 7.5, 7.6, 7.7 and 7.8 for all cases of Fig. 7.1.
The dependences of the normalized EP from NWs of HD n-Hg1xCdxTe with
respect to lm thickness, normalized carrier degeneracy, normalized light intensity
and wavelength have been drawn in Figs. 7.9, 7.10, 7.11 and 7.12 in accordance
with perturbed HD three [using (7.22a) and (7.19)] and HD two [using (7.22a) and
(7.20)] band models of Kane together with HD parabolic [using (7.22a) and (7.21)]
energy bands as shown by curves (ac) respectively. The variations of normalized
EP from NWs of HD n-In1xGaxAsyP1y lattice matched to InP, have been drawn in
Figs. 7.13, 7.14, 7.13 and 7.16 as functions of lm thickness, normalized carrier
degeneracy, normalized incident light intensity and wavelengths respectively.
Fig. 7.1 Plot of the normalized EP from QWs of HD n-Hg1xCdxTe as a function of lm

thickness in which the curves ac represent the perturbed HD three and two band models of Kane
together with HD parabolic energy bands respectively
334
Fig. 7.2 Plot of the normalized EP from QWs of HD n-Hg1xCdxTe as a function of normalized
Fig. 7.3 Plot of the normalized EP from QWs of HD n-Hg1xCdxTe as a function of normalized
light intensity for all cases of Fig. 7.1
335
Fig. 7.4 Plot of the normalized EP from QWs of HD n-Hg1xCdxTe as a function of light
wavelength for all cases of Fig. 7.1
Fig. 7.5 Plot of the normalized EP from QWs of HD n-In1xGaxAsyP1y lattice matched to InP as
a function of lm thickness in which the curves ac represent the perturbed HD three and two band
models of Kane together with HD parabolic energy bands respectively
336
a function of normalized electron degeneracy for all cases of Fig. 7.5
Fig. 7.7 Plot of the normalized from QWs of HD n-In1xGaxAsyP1y lattice matched to InP as a
function of normalized light intensity for all cases of Fig. 7.5
337
a function of light wavelength for all cases of Fig. 7.5
Fig. 7.9 Plot of the normalized EP from NWs of HD n-Hg1xCdxTe as a function of lm

thickness in which the curves ac represents the perturbed HD three and two band models of Kane
338
Fig. 7.10 Plot of the normalized EP from NWs of HD n-Hg1xCdxTe as a function of normalized
Fig. 7.11 Plot of the normalized EP from NWs of HD n-Hg1xCdxTe as a function of normalized
339
Fig. 7.12 Plot of the normalized EP from NWs of HD n-Hg1xCdxTe as a function of light
Fig. 7.13 Plot of the normalized EP from NWs of HD n-In1xGaxAsyP1y lattice matched to InP
as a function of lm thickness in which the curves ac represent the perturbed HD three and two
band models of Kane together with HD parabolic energy bands respectively
340
as a function of normalized electron degeneracy for all cases of Fig. 7.13
as a function of normalized light intensity for all cases of Fig. 7.13
341
as a function of light wavelength for all cases of Fig. 7.13
The dependences of the normalized EP from QBs of HD n-Hg1xCdxTe on the

lm thickness, normalized carrier degeneracy, normalized light intensity and
wavelength have been drawn in Figs. 7.17, 7.18, 7.19 and 7.20 in accordance with
perturbed HD three [using (7.27) and (7.26)] and HD two [using (7.28) and (7.26)]
band models of Kane together with HD parabolic [using (7.29) and (7.26)] energy
bands as shown by curves (ac) respectively. The variations of normalized EP from
QBs of HD n-In1xGaxAsyP1y lattice matched to InP, have been drawn in
Figs. 7.21, 7.22, 7.23 and 7.24 as functions of lm thickness, normalized carrier
degeneracy, normalized incident light intensity and wavelengths respectively for all
the cases of Fig. 7.17. From Figs. 7.1 and 7.5, it appears that EP from QWs of HD
optoelectronic materials decreases with increasing lm thickness in oscillatory
manners. From Figs. 7.9 and 7.13, it appears that the EP from NWs of HD optoelectronic materials increases with decreasing lm thickness exhibiting trapezoidal
variation for a very small thickness bandwidth for the whole range of thicknesses
considered. The widths of the trapezoids depend on the energy band constants of
n-Hg1xCdxTe and n-In1xGaxAsyP1y lattice matched to InP respectively.
From Figs. 7.17 and 7.21, we observe that the EP from HD QBs of optoelectronic materials decreases with increasing lm thickness exhibiting prominent
trapezoidal variation for relatively large thickness bandwidth. These three types of
variations are the special signatures of 1D connement in HD QWs, 2D connement in HD NWs and 3D connement in HD QBs of optoelectronic materials
respectively in the presence of light. From Figs. 7.2 and 7.6, it appears that the
normalized EP from HD QWs increases with increasing carrier degeneracy and for
relatively large values of the same variable; it exhibits quantum jumps for all types
of band models when the size quantum number changes from one xed value to
342
Fig. 7.17 Plot of the normalized EP from HD QBs of n-Hg1xCdxTe as a function of lm

thickness in which the curves ac represent the perturbed HD three and two band models of Kane
Fig. 7.18 Plot of the normalized EP from HD QBs of n-Hg1xCdxTe as a function of normalized
343
Fig. 7.19 Plot of the normalized EP from HD QBs of n-Hg1xCdxTe as a function of normalized
Fig. 7.20 Plot of the normalized EP from HD QBs of n-Hg1xCdxTe as a function of light
344
Fig. 7.21 Plot of the normalized EP from HD QBs of n-In1xGaxAsyP1y lattice matched to InP as
a function of lm thickness in which the curves ac represent the perturbed HD three and two band
models of Kane together with HD parabolic energy bands respectively
a function of normalized electron degeneracy for all cases of Fig. 7.21
345
a function of normalized light intensity for all cases of Fig. 7.21
a function of light wavelength for all cases of Fig. 7.21
346
another. The Figs. 7.10 and 7.14 show respectively that the normalized EP in HD
NWs of optoelectronic materials increases with increasing normalized electron
degeneracy.
The Figs. 7.18 and 7.22 demonstrate that the EP from HD QBs of optoelectronic
materials increases with increasing electron degeneracy again in a different oscillatory manner. From Figs. 7.3, 7.7, 7.11, 7.15, 7.19 and 7.23, it appears that the EP
increases with decreasing intensity for all types of quantum connement. From
Figs. 7.4, 7.8, 7.12, 7.16, 7.20 and 7.24, we can conclude that the normalized EP
decreases with increasing wavelength for HD QWs, NWs and QBs of optoelectronic materials. Finally, it is apparent from all the gures that the EP from quantum
conned HD ternary materials is larger as compared with the quantum conned HD
quaternary compounds for all types of quantum connement.

(R.7.1)
(R.7.2)
(R.7.3)
(R.7.4)
(R.7.5)
(R.7.6)
Investigate the multi-photon EP from all the quantum conned HD

materials (i.e., HD multiple QWs, NWs and QBs) whose unperturbed
carrier energy spectra are dened in (R.1.1) of Chap. 1 in the presence of
arbitrary oriented photo-excitation and quantizing magnetic eld
respectively.
Investigate the multi-photon EP in the presence of arbitrary oriented
photo-excitation and alternating quantizing magnetic eld respectively
for all the problems of R.7.1.
photo-excitation, alternating quantizing magnetic eld and an additional
arbitrary oriented non-quantizing non-uniform electric eld respectively
photo-excitation, alternating quantizing magnetic eld and additional
arbitrary oriented non-quantizing alternating electric eld respectively
photo-excitation, and crossed quantizing magnetic and electric elds
respectively for all the problems of R.7.1.
Investigate the multi-photon EP for arbitrarily oriented photo-excitation
and quantizing magnetic eld from the entire quantum conned heavilydoped materials in the presence of exponential, Kane, Halperin, Lax and
(R.7.7)
(R.7.8)
(R.7.9)
(R.7.10)
(R.7.11)
(R.7.12)
(R.7.13)
(R.7.14)
(R.7.15)
(R.7.16)
(R.7.17)
(R.7.18)
(R.7.19)
(R.7.20)
(R.7.21)
347
Bonch-Bruevich types of band tails for all materials whose unperturbed

carrier energy spectra are dened in (R.1.1) of Chap. 1.
Investigate the multi-photon EP for arbitrarily oriented photo-excitation
and alternating quantizing magnetic eld for all the cases of R.7.6.
Investigate the multi-photon EP in the presence of arbitrarily oriented
photo-excitation, alternating quantizing magnetic eld and an additional
arbitrarily oriented non-quantizing non-uniform electric eld for all the
cases of R.7.6.
photo-excitation, alternating quantizing magnetic eld and additional
arbitrary oriented non-quantizing alternating electric eld respectively
photo-excitation, and crossed quantizing magnetic and electric elds
respectively for all the cases of R.7.6.
Investigate the multi-photon EP for all the appropriate problems from
R.7.1 to R.7.10 in the presence of nite potential wells.
Investigate the multi-photon EP for all the appropriate HD problems
from R.7.1 to R.7.10 in the presence of parabolic potential wellsPotential well.
Investigate the multi-photon EP for all the above appropriate HD
problems for quantum rings.
Investigate the multi-photon EP for all the above appropriate HD
problems in the presence of elliptical Hill and quantum square rings
respectively.
Investigate the multi-photon EP from HD nanotubes in the presence of
arbitrary photo-excitation.
arbitrary photo-excitation and non-quantizing alternating electric eld.
arbitrary photo-excitation and non-quantizing alternating magnetic eld.
arbitrary photo-excitation and crossed electric and quantizing magnetic
elds.
Investigate the multi-photon EP from HD semiconductor nanotubes in
the presence of arbitrary photo-excitation for all the materials whose
unperturbed carrier dispersion laws are dened in (R.1.1) of Chap. 1.
the presence of non-quantizing alternating electric eld and arbitrary
photo-excitation for all the materials whose unperturbed carrier
dispersion laws are dened in (R.1.1) of Chap. 1.
the presence of non-quantizing alternating magnetic eld and arbitrary
348
(R.7.22)
(R.7.23)
(R.7.24)
(R.7.25)
(R.7.26)
(R.7.27)
(R.7.28)
(R.7.29)
(R.7.30)
(R.7.31)
(R.7.32)
photo-excitation for all the materials whose unperturbed carrier

the presence of arbitrary photo-excitation and non-uniform electric eld
for all the materials whose unperturbed carrier dispersion laws are
dened in (R.1.1) of Chap. 1.
the presence of arbitrary photo-excitation and alternating quantizing
magnetic elds for all the materials whose unperturbed carrier
the presence of arbitrary photo-excitation and crossed electric and
quantizing magnetic elds for all the materials whose unperturbed
carrier dispersion laws are dened in (R.1.1) of Chap. 1.
Investigate the multi-photon EP in the presence of arbitrary photoexcitation for all the appropriate HD nipi structures of the materials whose
unperturbed carrier energy spectra are dened in (R.1.1) of Chap. 1.
Investigate the multi-photon EP in the presence of arbitrary photoexcitation for all the appropriate HD nipi structures of the materials
whose unperturbed carrier energy spectra are dened in (R.1.1) of
Chap. 1 in the presence of an arbitrarily oriented non-quantizing nonuniform additional electric eld.
Investigate the multi-photon EP for all the appropriate HD nipi structures
of the materials whose unperturbed carrier energy spectra are dened in
(R.1.1) of Chap. 1 in the presence of an arbitrarily oriented photo-excitation and non-quantizing alternating additional magnetic eld.
(R.1.1) of Chap. 1 in the presence of an arbitrarily oriented photo-excitation and quantizing alternating additional magnetic eld.
(R.1.1) of Chap. 1 in the presence of an arbitrarily oriented photo-excitation and crossed electric and quantizing magnetic elds.
Investigate the multi-photon EP from HD nipi structures for all the
appropriate cases of all the above problems.
Investigate the multi-photon EP in the presence of arbitrary photoexcitation for the appropriate accumulation layers of all the materials
whose unperturbed carrier energy spectra are dened in (R.1.1) of Chap. 1.
Investigate the multi-photon EP in the presence of arbitrary photoexcitation for the appropriate accumulation layers of all the materials
whose unperturbed carrier energy spectra are dened in (R.1.1) of
(R.7.33)
(R.7.34)
(R.7.35)
(R.7.37)
(R.7.38)
(R.7.39)
(R.7.40)
(R.7.41)
(R.7.42)
(R.7.43)
349
Chap. 1 in the presence of an arbitrarily oriented non-quantizing nonuniform additional electric eld.
Investigate the multi-photon EP for the appropriate accumulation layers
of all the materials whose unperturbed carrier energy spectra are dened
in (R.1.1) of Chap. 1 in the presence of an arbitrarily oriented photoexcitation and non-quantizing alternating additional magnetic eld.
Investigate the multi-photon EPfor the appropriate accumulation layers
in (R.1.1) of Chap. 1 in the presence of an arbitrarily oriented photoexcitation and quantizing alternating additional magnetic eld.
Investigate the multi-photon EP for the appropriate accumulation layers
in (R.1.1) of Chap. 1 in the presence of an arbitrarily oriented photoexcitation and crossed electric and quantizing magnetic elds by considering electron spin and broadening of Landau levels.
Investigate the multi-photon EP in the presence of arbitrary photoexcitation from wedge shaped and cylindrical HD QBs of all the
materials whose unperturbed carrier energy spectra are dened in
(R.1.1) of Chap. 1.
Investigate the multi-photon EP in the presence of arbitrary photoexcitation from wedge shaped and cylindrical HD QBs of all the
(R.1.1) of Chap. 1 in the presence of an arbitrarily oriented non-quantizing non-uniform additional electric eld.
Investigate the multi-photon EP from wedge shaped and cylindrical HD
QBs of all the materials whose unperturbed carrier energy spectra are
dened in (R.1.1) of Chap. 1 in the presence of an arbitrarily oriented
photo-excitation and non-quantizing alternating additional magnetic
eld.
photo-excitation and quantizing alternating additional magnetic eld.
photo-excitation and crossed electric and quantizing magnetic elds.
QBs for all the appropriate cases of the above problems.
Investigate all the problems from R.7.1 to R.7.42 by removing all the
mathematical approximations and establishing the respective appropriate uniqueness conditions.
350
Reference
1. K. P. Ghatak, S. Bhattacharya, D. De, Einstein Relation in Compound Semiconductors and their
nanostructures. Springer Series in Materials Science, vol. 116 (Springer, Germany, 2008) (and
the references cited therein)
Chapter 8
The EP from HD Effective Mass Super

Lattices of Optoelectronic Materials
8.1 Introduction
In Chap. 4, the photoemission has been studied from SLs having various band
structures assuming that the band structures of the constituent materials are invariant
quantities in the presence of external photo-excitation. In this chapter, this assumption has been removed and in Sect. 8.2.1, an attempt is made to study the magneto
EP from HD effective mass QWSL of optoelectronic materials. In Sect. 8.2.2, the
photoemission from HD effective mass NW SLs of optoelectronic materials has been
investigated and in Sect. 8.2.3, the EP from HD effective mass QB SLs of optoelectronic materials has been studied. The Sect. 8.2.4 explores the magneto EP from
HD effective mass SLs of optoelectronic materials. The Sects. 8.3 and 8.4 contain
respectively the result and discussions and open research problems pertinent to this
chapter.

8.2.1 The Magneto EP from HD QWs Effective Mass Super
Lattices
The electron dispersion law in III-V effective mass super lattices can be written
as [1]
1
2
kx2 2 cos1 ffHD1 E; k; gg ; ky ; kz g2 k?

L0

DOI 10.1007/978-3-319-11188-9_8
8:1
351
8 The EP from HD Effective Mass Super Lattices
352
where
fHD1 E; k; gg ; ky ; kz a1HD cosa0 C1HD E; gg1 ; k; k? b0 D1HD E; gg2 ; k; k?

a1HD
a2HD
a2HD cosa0 C 1HD E; gg1 ; k; k? b0 D1HD E; gg2 ; k; k? ;

s
s
mc2 T10 0; k; gg2
mc2 T10 0; k; gg2 1
2
1 4
;
0
mc1 T1 0; k; gg1
mc1 T10 0; k; gg1
s
s
mc2 T10 0; k; gg2
mc2 T10 0; k; gg2 1
2

1
;

4
mc1 T10 0; k; gg1
mc1 T10 0; k; gg1
1HD E; gg1 ; k; k? 2mc1 T1 E; gg1 ; k k 2 1=2

C
?
h2
2mc2
2 1=2
2 T1 E; gg2 ; k k?

h
and
1HD E; gg1 ; k; k?
D
In the presence of a quantizing magneticeld B along kx direction, the magneto

electron energy spectrum can be written as
kx2 xHD E; gg ; k; n
8:2
1
HD E; gg ; k; n L12 cos1 ffHD1 E; k; gg ; ng2 2eB
where x
h n 2;
0
fHD1 E; k; gg ; n a1HD cosa0 C1HD E; gg1 ; k; n b0 D1HD E; gg2 ; k; n

a2HD cosa0 C 1HD E; gg1 ; k; n b0 D1HD E; gg2 ; k; n;
1HD E; gg1 ; k; n 2mc1 T1 E; gg1 ; k 2eB n 11=2 and
C
h
2
h2
2m
2eB
1
1HD E; gg1 ; k; n c2 T1 E; gg2 ; k
n 1=2
D
2
h
2
h
The total energy eTQ1 in this case can be expressed as
nx p 2
xHD eTQ1 ; gg ; k; n
dx
8:3
The Z part of the energy EZQ1 in this case can be written as
where
nx p
L0 cos1 fHD1 EZQ1 ; k; gg ; 0
dx
8:4
353

1HD EZQ1 ; gg1 ; k; 0 b0 D
1HD EZQ1 ; gg2 ; k; 0
fHD1 EZQ1 ; k; gg ; 0 a1HD cosa0 C

1HD EZQ1 ; gg2 ; k; 0;
a2HD cosa0 C1HD EZQ1 ; gg1 ; k; 0 b0 D

1=2
1HD EZQ1 ; gg1 ; k; 0 2mc1 T1 EZQ1 ; gg1 ; k
1HD EZQ1 ; gg1 ; k; 0
and D
C
h2
2mc2
2 T1 EZQ1 ; gg2 ; k1=2
h

n0
nmax X
nmax
X
gm eB
Real part of
F1 g8SL1
ph
n0 n1
8:5
where g8SL1 kB T1 EFF ETQ1 and EFF is the Fermi energy in this case.
J
nmax nX
xmax
X
gm e2 Ba0
Real part of
F1 g8SL1 vz EZQ1
hdx
n0 nx
8:6
min
where vz EZQ1
L0
1fHD1 EZQ1 ;k;gg ;0

:
0
hfHD1
EZQ1 ;k;gg ;0
8.2.2 The EP from HD NW Effective Mass Super Lattices

The dispersion relation in this case is given by
1
kx2 2 cos1 ffHD1 E; k; gg ; ny ; nz g2 G881
L0
8:7
where
fHD1 E; k; gg ; ny ; nz
a1HD cosa0 C 1HD E; gg1 ; k; ny ; nz b0 D1HD E; gg2 ; k; ny ; nz

a2HD cosa0 C1HD E; gg1 ; k; ny ; nz b0 D1HD E; gg2 ; k; ny ; nz ;
2m
1HD E; gg1 ; k; ny ; nz c1 T1 E; gg1 ; k G881 1=2 ; G881 ny p2 nz p2 and
C
dy
dz
h2

2m
1HD E; gg1 ; k; ny ; nz c2 T1 E; gg2 ; k G881 1=2
D
h2

The sub-band energy E831 is given by
354
1
0 2 cos1 ffHD1 E 831 ; k; gg ; ny ; nz g2 G881
L0
8:8

kx DE; k; gg ; ny ; nz
8:9
where DE; k; gg ; ny ; nz L12 cos1 ffHD1 E; k; gg ; ny ; nz g2 G881 1=2

0

n0
nX
ymax n
zmax
X

2gv
Real part of
D EF81 ; k; gg ; ny ; nz
p
ny 1 nz 1

D1 EF81 ; k; gg ; ny ; nz
where D1 EF81 ; k; gg ; ny ; nz
Fermi energy in this case
I1LHD
Ps
r1
8:10
LrDEF81 ; k; gg ; ny ; nz and EF81 is the
nX
ymax n
zmax
X
a0 gm ekB T
Real part of
F0 !SLHD1
ph
n 1 n 1
y
8:11
where !SLHD1 EF81 E831 W hmkB T1 :
8.2.3 The EP from HD QB Effective Mass Super Lattices

The totally quantized energy ETQSL88 in this case is given by
nx p
1
2 2 cos1 ffHD1 ETQSL88 ; k; gg ; ny ; nz g2 G881
dx
L0
8:12

N0L
nX
ymax n
xmax n
zmax
X
X
2gm
Real part of
F1 g32HD
dx dy dz
n 1 n 1 n 1
x
8:13
where g32HD kB T1 EFQDSLEMHD ETQSL88 and EFQDSLEMHD is the Fermi

energy in this case.
355
nX
ymax n
xmax n
zmax
X
X
a0 egv
Real part of
F1 g32HD vZ EZQ1 :
dx dy dz
nx
n 1 n 1
min
8:14
8.2.4 The Magneto EP from HD Effective Mass Super

Lattices
D3 E; gg ; k; n kx
8:15
where
D3 E; gg ; k; n xHD E; gg ; k; n1=2
The Landau sub-band energy E33HD in this case can be expressed as
D3 E33HD ; gg ; k; n 0
8:16

n0
nX
ymax
gv eB
Real
part
of
D3 EFBSLEMHD ; gg ; k; n
p2 h
n0
8:17
D4 EFBSLEMHD ; gg ; k; n
P
where
D4 EFBSLEMHD ; gg ; k; n sr1 LrD3 EFBSLEMHD ; gg ; k; n
EFBSLEMHD is the Fermi energy in this case.
The EP assumes the form
JML
nmax
X
a0 e2 BkB T
Real
part
of
F0 g701HD
2p2 h2
n0
and
8:18
where g701HD kB T1 EFBSLEMHD E33HD W hm:

Using the appropriate equations the normalized EP from QW HgTe/Hg1xCdxTe HD
effective mass SL has been plotted as a function of inverse quantizing magnetic eld
as shown in plot (a) of Fig. 8.1 whose constituent materials obey the perturbed HD
three band model of Kane in the presence of external photo-excitation. The curves (b)
356
Fig. 8.1 Plot of the normalized EP from HD QW effective mass superlattices of HgTe/Hg1
xCdxTe as a function of inverse magnetic eld in which the curves a, b and c represent the
perturbed HD three and two band models of Kane together with HD parabolic energy bands
respectively. The curves d, e and f exhibit the corresponding plots of HD InxGa1xAs/InPSL
and (c) of the same gure have been drawn for perturbed HD two band model of Kane
and that of perturbed HD parabolic energy bands respectively. The curves (d), (e) and
(f) in the same gure exhibit the corresponding plots of QW InxGa1xAs/InP effective
mass HD SL. The Figs. 8.2, 8.3, 8.4 and 8.5 show the variations of the normalized EP
from the said HD SLs as functions of normalized electron degeneracy, normalized
intensity, wavelength and thickness respectively for all the cases of Fig. 8.1. Using
the appropriate equations, the normalized EP from NW HD effective mass HgTe/Hg1
xCdxTe SL as a function of lm thickness has been depicted in plot (a) of Fig. 8.6
whose constituent materials obey the perturbed HD three band model of Kane in the
presence of external light waves. The curves (b) and (c) of the same gure have been
drawn for perturbed HD two band model of Kane and perturbed HD parabolic energy
bands respectively. The curves (d), (e) and (f) in the same gure exhibit the corresponding plots of InxGa1xAs/InP NW HD effective mass SL. The Figs. 8.7 8.8, 8.9
and 8.10 exhibit the plots of the normalized EP as functions of normalized carrier
concentration, normalized intensity, wavelength and normalized incident photon
energy respectively for all the cases of Fig. 8.6.
Using appropriate equations, the normalized EP from HgTe/Hg1xCdxTe and
InxGa1xAs/InP effective mass QB HD SLs respectively has been plotted for all
types of band models as a function of lm thickness as shown in Fig. 8.11.
Figures 8.12, 8.13, 8.14 and 8.15 exhibit the plots of normalized EP from the said
QB HD SLs as functions of normalized electron degeneracy, normalized intensity,
357
Fig. 8.2 Plot of the normalized EP from QW HD effective mass superlattices of HgTe/Hg1xCdxTe
and InxGa1xAs/InP as a function of normalized electron degeneracy for all cases of Fig. 8.1
and InxGa1xAs/InP as a function of normalized light intensity for all cases of Fig. 8.1
358
and InxGa1xAs/InP as a function of light wavelength for all cases of Fig. 8.1
Fig. 8.5 Plot of the normalized EP from QW HD effective mass superlattices of HD

HgTe/Hg1xCdxTe as a function of lm thickness in which the curves a, b and c represent the
perturbed three and two band models of Kane together with HD parabolic energy bands
respectively. The curves d, e and f exhibit the corresponding plots of InxGa1xAs/InP HDSL
359
Fig. 8.6 Plot of the normalized EP from NW HD effective mass superlattices of HgTe/Hg1xCdxTe
and InxGa1xAs/InP as function of lm thickness for all cases of Fig. 8.5
and InxGa1xAs/InP as function of normalized electron degeneracy for all cases of Fig. 8.5
360
and InxGa1xAs/InP as function of normalized light intensity for all cases of Fig. 8.5
and InxGa1xAs/InP as function of light wavelength for all cases of Fig. 8.5
361
Fig. 8.10 Plot of the normalized EP as function of normalized incident photon energy from NW
HD effective mass superlattices of HgTe/Hg1xCdxTe and InxGa1xAs/InP for all cases of Fig. 8.5
Fig. 8.11 Plot of the normalized EP from QB HD effective mass superlattices of

HgTe/Hg1xCdxTe as function of lm thickness in which the curves a, b and c represent the
perturbed HD three and two band models of Kane together with HD parabolic energy bands
respectively. The curves d, e and f exhibit the corresponding plots of InxGa1xAs/InP
362
Fig. 8.12 Plot of the normalized EP from QB HD effective mass superlattices of HgTe/Hg1xCdxTe
and InxGa1xAs/InP as function of normalized electron degeneracy for all cases of Fig. 8.11
and InxGa1xAs/InP as function of normalized light intensity for all cases of Fig. 8.11
363
and InxGa1xAs/InP as function of light wavelength for all cases of Fig. 8.11
and InxGa1xAs/InP as function of normalized incident photon energy for all cases of Fig. 8.11
364
wavelength and normalized incident photon energy respectively for all cases of
Fig. 8.11. Using appropriate equations, the normalized EP from effective mass
HgTe/Hg1xCdxTe HD SL under magnetic quantization has been plotted as a
function of quantizing inverse magnetic eld as shown in plot (a) of Fig. 8.16
whose constituent HD materials obey the perturbed HD three band model of Kane
in the presence of external photo-excitation. The curves (b) and (c) of the same
gure have been drawn for perturbed HD two band model of Kane and perturbed
HD parabolic energy bands respectively. The curves (d), (e) and (f) in the same
gure exhibit the corresponding plots of InxGa1xAs/InP HD SL. Figures 8.17,
8.18, 8.19 and 8.20 exhibit the said variation in this case as functions of normalized
electron degeneracy, normalized intensity, wavelength and normalized incident
photon energy respectively for all the cases of Fig. 8.16.
It appears from Fig. 8.1 that the normalized EP from QW effective mass HgTe/Hg1
xCdxTe and InxGa1xAs/InP HD SLs oscillate with the inverse quantizing magnetic
eld due to SdH effect where the oscillatory amplitudes and the numerical values are
determined by the respective energy band constants. From Fig. 8.2, it appears that the
EP increases with increasing carrier concentration in an oscillatory way. The Figs. 8.3
and 8.4 show that the EP decreases with increasing intensity and wavelength in
different manners. From Fig. 8.5, it appears that the normalized EP from QW effective
mass HgTe/Hg1xCdxTe and InxGa1xAs/InP HD SLs decreases with increasing lm
Fig. 8.16 Plot of the normalized EP from HD effective mass superlattices of HgTe/Hg1xCdxTe
as function of inverse magnetic eld and in which the curves a, b and c represent the perturbed
three and two band models of Kane together with parabolic energy bands respectively. The curves
d, e and f exhibit the corresponding plots of InxGa1xAs/InP
365
Fig. 8.17 Plot of the normalized magneto EP from HD effective mass superlattices of
HgTe/Hg1xCdxTe and InxGa1xAs/InP as function of normalized electron degeneracy for all
cases of Fig. 8.16
HgTe/Hg1xCdxTe and InxGa1xAs/InP as function of normalized light intensity for all cases of
Fig. 8.16
366
HgTe/Hg1xCdxTe and InxGa1xAs/InP as function of light wavelength for all cases of Fig. 8.16
HgTe/Hg1xCdxTe and InxGa1xAs/InP as function of normalized incident photon energy for all
cases of Fig. 8.16
367
thickness in oscillatory manner with different numerical values as specied by the

energy band constants of the aforementioned HD SLs. From Fig. 8.6, it appears that
the normalized EP from NW effective mass HgTe/Hg1xCdxTe and InxGa1xAs/InP
HD SLs increases with decreasing thickness and exhibit large oscillations. From
Fig. 8.7, it appears that normalized EP for the said system increases with increasing
carrier concentration, exhibiting a quantum jump for a particular value of the said
variable for all the models of both the HD SLs. From Figs. 8.8 and 8.9, it can be
inferred that the normalized EP in this case increases with decreasing intensity and
wavelength in different manners. From Fig. 8.10, it has been observed that the normalized EP from NW effective mass HgTe/Hg1xCdxTe and InxGa1xAs/InP HD SLs
increases with increasing normalized incident photon energy and exhibits quantum
steps for specic values of the said variable.
From Fig. 8.11, it appears that EP from QB effective mass HgTe/Hg1xCdxTe and
InxGa1xAs/InP HD SLs exhibit the same type of variations as given in Figs. 8.5
and 8.6 respectively although the physics of QB effective mass HD SLs is completely different as compared with the magneto QW effective mass HD SLs and NW
effective mass HD SLs respectively. The different physical phenomena in the former
one as compared with the latter two cases yield different numerical values of EP and
different thicknesses for exhibiting quantum jump respectively. From Figs. 8.12,
8.13 and 8.14, it appears that EP from QB effective mass HgTe/Hg1xCdxTe and
InxGa1xAs/InP HD SLs increases with increasing carrier concentration, decreasing
intensity and decreasing wavelength respectively in various manners. Figure 8.15
demonstrates the fact that the EP from QB effective mass HgTe/Hg1xCdxTe and
InxGa1xAs/InP HD SLs exhibit quantum steps with increasing photon energy for
both the cases.
Figure 8.16 exhibits the fact that the normalized EP current density from
effective mass HgTe/Hg1xCdxTe and InxGa1xAs/InP HD SLs oscillates with
inverse quantizing magnetic eld. Figure 8.17 exhibits the fact that the EP in this
case increases with increasing carrier concentration. Figures 8.18 and 8.19 demonstrate that EP decreases with increasing intensity and wavelength in different
manners. Finally, from Fig. 8.20, it can be inferred that EP exhibits step functional
dependence with increasing photon energy for both the HD SLs in this case with
different numerical magnitudes.

368
(R:8:1) Investigate the EP from quantum conned HD III-V, II-VI, IV-VI,

HgTe/CdTe effective mass superlattices together with short period,
strained layer, random, Fibonacci, polytype and sawtooth superlattices in
the presence of arbitrarily oriented photo-excitation and strain.
(R:8:2) Investigate the multi-photon EP in the presence of arbitrarily oriented
photo-excitation and quantizing magnetic eld respectively for all the
cases of R.8.1.
photo-excitation and non-quantizing non-uniform electric eld respectively for all the cases of R.8.1.
photo-excitation and non-quantizing alternating electric eld respectively for all the cases of R.8.1.
photo-excitation and crossed electric and quantizing magnetic elds
(R:8:6) Investigate the multi-photon EP from heavily doped quantum conned
superlattices for all the problems of R.8.1.
cases of R.8.1.
(R:8:11) Investigate the EP from quantum conned HD III-V, II-VI, IV-VI,
HgTe/CdTe superlatticesQuantum conned HD III-V, II-VI, IV-VI,
HgTe/CdTe superlattices with graded interfaces together with short
period, strained layer, random, Fibonacci, polytype and sawtooth superlattices in this context in the presence of arbitrarily oriented photoexcitation.
(R:8:12) Investigate the multi-photon EP from heavily doped quantum conned
superlattices for all the problems of R.8.11 in the presence non-uniform
strain.
cases of R.8.11.
369

(R:8:17) Investigate all the problems from R.8.1 to R.8.16 by removing all the
Reference
1. K.P. Ghatak, S. Bhattacharya, D. De, Einstein Relation in Compound Semiconductors and their
Nanostructures. Springer series in materials science, vol. 116 (Springer, Germany, 2008)
Chapter 9
Few Related Applications and Brief

Review of Experimental Results
9.1 Introduction
In this book we have discussed many aspects of EP based on the dispersion relations of different technologically important HDS and their nanostructures. In this
chapter we discuss regarding few applications of the content of this book in the
Sect. 9.2. We shall also present the brief review of the experimental results in
Sect. 9.3. The Sect. 9.4 contains single deep open research problem.
9.2 Different Related Applications

The content of this book nds six applications in the eld of materials science and
related disciplines in general.
I. Carrier contribution to the elastic constants: The knowledge of the carrier
contribution to the elastic constants is important in studying the mechanical
properties of the materials and has been investigated in the literature [123].
The electronic contribution to the second and third order elastic constants for
HDS can be written as [123]
G20
on0
Real part of
;
9
oEFh fi
9:1
G30
o2 n0
Real part of
;
27
oEFh fi 2
9:2
DC44
and
DC456
where G0 is the deformation potential constant.

DOI 10.1007/978-3-319-11188-9_9
371
372
It is well-known that the thermoelectric power of the carriers in HDS in the

presence of a classically large magnetic eld is independent of scattering
mechanisms and is determined only by their energy band spectra [2454]. The
magnitude of the thermoelectric power G can be written as [2454]
1
G
jejTn0
Z1
1

of0
E EFh RE
dE
oE
9:3
where R(E) is the total number of states. The (9.3) can be written under the
condition of carrier degeneracy [2454] as
G
p2 kB2 T
on0
Real part of
3jejn0
oEFh fi
9:4
Thus, using (9.1), (9.2) and (9.4), we can write

DC44 n0 G20 jejG= 3p2 kB2 T
9:5
and
DC456
n0 jejG30 G2 =3p4 kB3 T

n0 oG
1
:
G on0
9:6
Thus, again the experimental graph of G versus n0 allows us to determine the

electronic contribution to the elastic constants for materials having arbitrary
spectra.
II. Measurement of Band-gap of HDS in the presence of Light Waves: With the
advent of nano-photonics, there has been considerable interest in studying the
optical processes in semiconductors and their nanostructures in the presence of
intense light waves [5563]. It appears from the literature, that the investigations in the presence of external intense photo-excitation have been carried
out on the assumption that the carrier energy spectra are invariant quantities
under strong external light waves, which is not fundamentally true. The
physical properties of semiconductors in the presence of strong light waves
which alter the basic dispersion relations have relatively been much less
investigated in [64] as compared with the cases of other external elds needed
for the characterization of the low dimensional semiconductors.
With the radical change in the dispersion relation, it is evident that the band gap
will also change and in this section we study the normalized incremental band
gap (DEg ) of HDS as functions of incident light intensity and the wave length
respectively in the presence of strong light excitation.
Using the (5.46b)(5.48), the normalized incremental band gap (DEg ) has been
plotted as a function of normalized I0 (for a given wavelength and considering
red light for which k 660 nm) at T = 4.2 K in Figs. 9.1 and 9.2 for HD
373

Fig. 9.1 Plots of the normalized incremental band gap DEg for HD n-Hg1xCdxTe as a function
of normalized light intensity in which the curves a and b represent the perturbed HD three and two
band models of Kane respectively. The curve c represents the same variation in HD n-Hg1xCdxTe
in accordance with the perturbed parabolic energy bands

Fig. 9.2 Plots of the normalized incremental band gap DEg for HD In1xGaxAsyP1y lattice
matched to InP as a function of normalized light intensity for all cases of Fig. 9.1
374

Fig. 9.3 Plots of the normalized incremental band gap DEg for HD Hg1xCdxTe as a function of
n-Hg1xCdxTe and n-In1xGaxAsyP1y lattice matched to InP in accordance

with the perturbed three and two band models of Kane and that of perturbed
parabolic energy bands respectively. In Figs. 9.3 and 9.4, the normalized
incremental band gap has been plotted for the aforementioned optoelectronic
compounds as a function of k. It is worth remarking that the influence of an
external photo-excitation is to change radically the original band structure of
the material. Because of this change, the photon eld causes to increase the
band gap of semiconductors. We propose the following two experiments for the
measurement of band gap of semiconductors under photo-excitation.
(A) A white light with colour lter is allowed to fall on a semiconductor and
the optical absorption coefcient a0 is being measured experimentally.
For different colours of light, a0 is measured and a0 versus hx (the
incident photon energy) is plotted and we extrapolate the curve such that

a0 ! 0 at a particular value hx1 . This hx1 is the unperturbed band gap of
the semiconductor. During this process, we vary the wavelength with xed
I0. From our present study, we have observed that the band gap of the
semiconductor increases for various values of k when I0 is xed (from
Figs. 9.3 and 9.4). This implies that the band gap of the semiconductor
measured (i.e. hx1 Eg ) is not the unperturbed band gap Eg0 but the
perturbed band gap Eg; where Eg Eg0 DEg ; DEg is the increased band
gap at
hx1 . Conventionally, we consider this Eg as the unperturbed band
375

Fig. 9.4 Plots of the normalized incremental band gap DEg for HD In
matched to InP as a function of wavelength for all cases of Fig. 9.1
1xGsxAsyP1y
lattice
gap of the semiconductor and this particular concept needs modication.

Furthermore, if we vary I0 for a monochromatic light (when k is xed) the
band gap of the semiconductor will also change consequently (Figs. 9.1
and 9.2). Consequently, the absorption coefcient will change with the
intensity of light [64]. For the overall understanding, the detailed theoretical and experimental investigations are needed in this context for
various materials having different band structures.
(B) The conventional idea for the measurement of the band gap of the
semiconductors is the fact that the minimum photon energy hv (v is the
frequency of the monochromatic light) should be equal to the band gap
Eg0 (unperturbed) of the semiconductor, i.e.,
hv Eg0
9:7
In this case, k is xed for a given monochromatic light and the

semiconductor is exposed to a light of wavelength k. Also the intensity of
the light is xed. From Figs. 9.3 and 9.4, we observe that the band
hv Eg
9:8
376
Furthermore, if we vary the intensity of light (Figs. 9.1 and 9.2) for the
study of photoemission, the minimum photon energy should be
hv1 Eg1
9:9
gap of the semiconductor is not Eg0 (for a minimum value of hv) but Eg,
the perturbed band gap. Thus, we can rewrite the above equality as where
Eg1 is the perturbed band gap of the semiconductor due to various intensity
of light when v and v1 are different.
Thus, we arrive at the following conclusions:
(a) Under different intensity of light, keeping k xed, the condition of
band gap measurement is given by
hv1 Eg1 Eg0 DEg1
9:10
(b) Under different colour of light, keeping the intensity xed, the
condition of band gap measurement assumes the form
hv Eg Eg0 DEg
9:11
and not the conventional result as given by (9.7).

III. Diffusion Coefcient of the Minority Carriers: This particular coefcient in
quantum conned lasers can be expressed as
Di =D0 dEFi =dEF
9:12
where Di and D0 are the diffusion coefcients of the minority carriers both in
the presence and absence of quantum connements and EFi and EF are the
Fermi energies in the respective HD cases. It appears then that, the formulation
of the above ratio requires a relation between EFi and EF, which, in turn, is
determined by the appropriate carrier statistics. Thus, our present study plays an
important role in determining the diffusion coefcients of the minority carriers
of HD quantum-conned lasers with materials having arbitrary band structures.
Therefore in the investigation of the optical excitation of the HD optoelectronic
materials which lead to the study of the ambipolar diffusion coefcients the
present results contribute signicantly.
IV. Nonlinear Optical Response: The nonlinear response from the optical excitation
of the free carriers is given by [65]
e2
Z0 2 2
x h

Z1
okx 1
kx
f0 NEdE
oE
0
9:13
377
where x is the optical angular frequency, N(E) is the DOS function. From the
various E-k relations of different HD materials under different physical
conditions, we can formulate the expression of N(E) and from band structure

x
we can derive the term kx ok
and thus by using the DOS function as
oE
formulated, we can study the Z0 for all types of materials as considered in this
monograph.
V. Third Order Nonlinear Optical Susceptibility: This particular susceptibility can
be written as [66]

n0 e 4 e 4
vNP x1 ; x2 ; x3
24x1 x2 x3 x1 x2 x3 h4
9:14
R1 4
where n0 e4 0 ookE4 NE f0 dE and the other notations are dened in [70].
z
4
o E
The term ok4 can be formulated by using the dispersion relations of different
z
HD materials as given in appropriate sections of this monograph. Thus one can

investigate the vNP x1 ; x2 ; x3 for all materials as considered in this
monograph.
VI. Generalized Raman Gain: The generalized Raman gain in optoelectronic
materials can be expressed as [67]

2

16p2 c2
Cq
e 2 2 2

RG I
m R
hxqgx2s ns np
C
mc2
where, I
9:15
f0 n; kz " f0 n; kz #; f0 n; kz " is the Fermi factor for spin-
n:tz
up Landau levels, f0 n; kz # is the Fermi factor for spin down Landau levels,
n is the Landau quantum number and the other notations are dened in [71]. It
appears then the formulation of RG is determined by the appropriate derivation
of the magneto-dispersion relations. By using the different appropriate formulas
as formulated in various HD materials in different chapters of this monograph
RG can, in general, be investigated.
9.3 Brief Review of Experimental Results

The experimental aspects of the EP is very wide and even the condensed presentation of which in a chapter highlighting the major points only permanently enjoys
the domain of impossibility theorems. Still for the purpose of coherent presentation
we embark on a difcult and deep work.
Houdr et al. [68] have presented the rst experimental evidence of tunnelling
and transport of electrons from quantum states in a GaAs/GaAlAs super-lattice or a
378
quantum well to a GaAs surface activated to negative electron afnity. The photocurrent versus light excitation energy showed denite structures which appeared
exactly at the calculated energies of the allowed optical transitions between the
quantized levels of the valence and conduction bands. The 300- and 30-K results for
the super-lattice were successfully compared to luminescence experiments, and
could lead to the production of highly polarized electron beams. Lockwood [69] in
an important review article has pointed out that amongst a number of diverse
approaches to engineering efcient light emission in silicon nano-structures, one
system that has received considerable attention has been Si/SiO2 quantum wells.
Engineering such structures has not been easy, because to observe the desired
quantum connement effects, the quantum well thickness has to be less than 5 nm.
Nevertheless, such ultra thin structures have now been produced by a variety of
techniques. The SiO2 layers are amorphous, but the silicon layers can range from
amorphous through nano-crystalline to single-crystal form. The fundamental band
gap of the quantum wells has been measured primarily by optical techniques and
strong connement effects have been observed. A detailed comparison is made
between theoretical and experimental determinations of the band gap in Si/SiO2
quantum wells.
Connement of electrons in small structures such as a thin lm results in discrete
quantum well states. Such states can be probed by angle-resolved photoemission
and Chiang and Chiang [70] have reviewed the basic physics and applications of
quantum well spectroscopy. The energies and lifetime widths of quantum well
states in a lm depend on the lm thickness, the dynamics of electron motion in the
lm, and the connement potential. A detailed study allows a determination of the
bulk band structure of the lm material, the lifetime broadening of the quasiparticle, and the interfacial reflectivity and phase shift, as will be demonstrated with
simple examples. Quantication of the photoemission results can be achieved
through a simple phase analysis based on the Bohr-Sommerfeld quantization rule.
Explicit forms of wave functions can also be constructed for additional information
regarding the spatial distribution of the electronic states. From such studies, a
detailed understanding of the behaviour of simple quantum wells including the
effects of lattice mismatch can be developed, which provides a useful basis for
investigating the properties of multi-layers.
Low-temperature optical transmission spectra of several InxGa1x As/GaAs
strained multiple quantum wells (MQWs) with different well widths and In mole
fractions have been measured by Ji et al. [71] the excitonic transitions up to 3C-3H
are observed. The notation n c-m H (L) is used to indicate the transitions related to
the nth conduction and mth valence heavy (light) hole sub bands. Step like structures corresponding to band-to-band transitions are also observed, which are
identied as 1C-1L transitions. The calculated transition energies, taking into
account both the strain and the quantum well effects, are in good agreement with the
measured values. In these calculations the lattice mismatch between the GaAs
buffer and the InGaAs/GaAs MQW is taken into account and the valence-band
offset Qv is chosen as an adjustable parameter. By tting the experimental results to
our calculations, we conclude that the light holes are in GaAs barrier region (type II
379
MQW) and the valence-band offset Qv is determined to be 0.30. A possible system

in which the transition from type I to type II for light holes might be observed is
also discussed.
Excitonic Photoluminescence (PL) line widths in AlGaAs grown by molecular
beam epitaxy (MBE). The line widths of excitonic transitions were measured by
Reynolds et al. [72] in AlxGa1xAs, grown by MBE as a function of alloy composition x for values of x 0.43 using high resolution PL spectroscopy at liquid
helium temperature. The values of the line widths thus measured are compared with
the results of several theoretical calculations in which the dominant broadening
mechanism is assumed to be the statistical potential fluctuations caused by the
components of the alloy. An increase in the line width as a function of x is observed
which is in essential agreement with the prediction of the various theoretical calculations. The line widths of the excitonic transitions in AlxGa1x As observed in
the present work are the narrowest ever reported in the literature, for example
= 2.1 meV for x = 0.36, thus indicating very high quality material.
Martin et al. [73] have measured the valence-band discontinuity at a wurtzite
GaN/AIN (0001) hetero junction by means of x-ray photoemission spectroscopy.
The method rst measures the core level binding energies with respect to the
valence-band maximum in both GaN and A1N bulk lms. The precise location of
the valence band maximum is determined by aligning prominent features in the
valence band spectrum with calculated densities of states. Subsequent measurements of separations between Ga and Al core levels for thin over layers of GaN lm
grown on A1N and vice versa yield a valence band discontinuity of
Ev = 0.8 + 0.3 eV in the standard Type I hetero junction alignment.
Electronic defects in ntype GaN were characterized by Gtz et al. [74] with the
help of photoemission capacitance transient spectroscopy. Conventional deep level
transient spectroscopy is of limited use in semiconductors with wide band gaps
(e.g., 3.4 eV for GaN at 300 K) because it utilizes thermal energy for charge
emission which restricts the accessible range of band gap energies to within
0.9 eV of either band edge, for practical measurement conditions. For electron
photoemission to the conduction band, four deep levels were detected at optical
threshold energies of approximately 0.87, 0.97, 1.25, and 1.45 eV. It is suggested
that the above photo-detected deep levels may participate in the 2.2 eV defect
luminescence transitions, which are also demonstrated for our material.
Benjamin et al. [75] present results of UV photoemission measurements of the
surface and interface properties of hetero epitaxial AlGaN on 6H-SiC. Previous
results have demonstrated a negative electron afnity of AlN on 6H-SiC. In this
study AlxGa1xN alloy lms were grown by OMVPE and doped with silicon. The
analytical techniques included UPS, Auger electron spectroscopy, and LEED. All
analysis took place in an integrated UHV transfer system which included the
analysis techniques, a surface processing chamber and a gas source MBE. The
OMVPE alloy samples were transported in air to the surface characterization system while the AlN and GaN investigations were prepared in situ. The surface
electronic states were characterized by surface normal UV photoemission to
determine whether the electron afnity was positive or negative. Two aspects of the
380
photoemission distinguish a surface that exhibits a NEA: (1) the spectrum exhibits a
sharp peak in the low kinetic energy region, and (2) the width of the spectrum is
hm Eg . The in situ prepared AlN samples exhibited the characteristics of a NEA
while the GaN and Al0.13Ga0.87N samples did not. The Al0.55Ga0.45N sample shows
a low positive electron afnity. Annealing of the sample to >400 C resulted in the
disappearance of the sharp emission features, and this effect was related to contaminant effects on the surface. The results suggest the potential of nitride based
cold cathode electron emitters.
The polarization of photo emitted electrons from thin GaAs layers grown by
MBE has been measured by Maruyama et al. [76]. Polarization as high as 49 % was
observed for a 0.2 mthick GaAs sample at excitation photon wavelengths longer
than 750 nm. The maximum polarization is dependent on the thickness of the GaAs
layer, decreasing to about 41 % for a 0.9 mthick GaAs sample.
The basecollector junction of GaAs/AlGaAs single hetero junction bipolar
transistors has been observed to emit light at avalanche break down by Chen et al.
[77]. The spectral distribution curve exhibits broad peaks at 2.03 and 1.43 eV, with
the intensities dependent upon the reverse current. These observations suggest that
electrons, excited to the upper conduction band by the eld, lose their energy by
impact ionizing electronhole pairs and producing the 2.03 eV light, which corresponds to the threshold energy for electron impact ionization. The bandedge
emission is the result of directgap freecarrier recombination and selfabsorption of
the high energy transition.
Angle-resolved transmission of s-polarized light in triple-lm hetero-opals has
been investigated by Khunsin et al. [78] in the spectral range including high-order
photonic band gaps, and compared to the transmission of its constituent single-lm
opals. The interfaces do not destroy the predominantly ballistic light propagation
over the studied frequency and angular ranges, but hetero structuring leads to a
smoothed angular distribution of intensity of the transmitted light and to the
reconstruction of the transmission minima dispersion. The interface transmission
function has been extracted by comparing the transmission of the hetero-opal and
its components in order to demonstrate the difference. This deviation from the
superposition principle was provisionally assigned to light refraction and reflection
at the photonic crystal interfaces and to the mismatch between mode group
velocities in hetero-opal components.
A 1.7-fold enhancement in the spontaneous emission intensity of dye chromophore loaded in a printable polymer is achieved by Reboud et al. [79] by coupling
the dye emission to surface plasmons of metallic nano particles. The nano composite material, embossed into arrays of wires by nano imprint lithography process,
shows good imprint properties. The results prove the potential of the prepared
luminescent functional materials for micro- and nanofabrication and suggest the use
of nano composite materials in prospective nano plasmonic applications.
A hetero junction between two 3-dimensional photonic crystals has been realized
by Romanov et al. [80] by interfacing two opal lms of different lattice constants.
The interface-related transmission minimum has been observed in the frequency
381
range between two directional lowest-order band gaps of the hetero-opal constituents. The interface transmission minimum has been modelled numerically and
tentatively explained by formation of the standing wave across the photonic heterocrystal due to matching of group velocities of optical modes in both parts at this
frequency.
The results of optical phenomena investigations in QD and quantum well
structures under inter band optical pumping are presented by Aleshkin et al. [81].
Inter-band and intra-band light absorption in nanostructures with QDs has been
studied experimentally and theoretically. PL and inter-band light absorption in
stepped quantum wells have been investigated including PL studies under picosecond optical pumping. Experimental results have been compared with results of
calculation of energy spectrum and transition probabilities. It is shown that inversion of population exists between the third and second excited levels of stepped
quantum well.
The PL spectra of samples with ultrathin InGaN layers embedded in AlGaN and
GaN matrices are studied experimentally by Usov et al. [82] in the temperature
range of 80300 K. It is shown that the temperature dependences can be understood
in the context of Eliseevs model and that, in the active region of the structures
under study, the dispersion of the exciton-localization energy depends on the
average In content in InGaN-alloy layers. Furthermore, the Urbach energy E U,
which characterizes the localization energy of excitons in the tails of the density-ofstates, was determined from an analysis of the shape of the low-energy slope of the
spectrum. It is shown that and E U, quantities representing the scale of the
exciton-localization effects, vary linearly with the PL-peak wavelength in the range
from the ultraviolet to the green region of the spectrum.
Nano wires have been formed by the inltration of CdTe nano crystals into nano
tubes of chrysotile asbestos (Mg3Si2O5(OH)4). PL of a regular array of these
templated nano-wires was studied by Bardosova et al. [83] under the excitation of
the light from a xenon lamp at different wavelengths. Strong interactions of nanocrystals with structural defects of the template were observed. No dependence of the
PL spectra upon polarisation of the laser beam was observed and no shift of the PL
band was detected in the light polarised along and across nano wires, thus indicating the weakness of the interaction between nano-crystals in the nano tubes.
Upon deposition of silicon onto the (1 1 0) surface of a silver crystal, Leandri
et al. [84] have grown massively parallel one-dimensional Si nano wires. They are
imaged in scanning tunnelling microscopy as straight, high aspect ratio, nanostructures, all with the same characteristic width of 16 , perfectly aligned along the
atomic troughs of the bare surface. Low energy electron diffraction conrms the
massively parallel assembly of these self-organized nano wires. Photoemission
reveals striking quantized states dispersing only along the length of the nano wires,
and extremely sharp, two-components, Si 2p core levels. This demonstrates that in
the large ensemble each individual nano wire is a well-dened quantum object
comprising only two distinct silicon atomic environments. They also suggest that
this self-assembled array of highly perfect Si nano wires provides a simple,
atomically precise, novel template that may impact a wide range of applications.
382
The coverage dependent electronic structure of Cu and Co on vicinal W(110)

surfaces has been investigated by Zilkens [85] with angle resolved photoelectron
spectroscopy. To prepare the quasi-one-dimensional Cu and Co systems, the method
of step edge decoration of the vicinal W(110) surfaces has been used. The vicinal
surfaces with step edges in (110), (100) and (111) direction has been investigated
using LEED. From the characteristic spot splitting a terrace width of 11 atom rows
was determined. The band structures of the flat and the vicinal surfaces have indicated
that the step edges have no bearing on the bulk band structure at k parallel = 0. But the
surface band structure shows a different dispersion and different energy positions of
surface states. An analysis of the W 4f/2 core level spectra has resulted in an
additional contribution of the step edges in the spectra of the vicinal surfaces with a
surface core level shift between 120 and 150 meV. A Cu and Co coverage dependent
investigation of the core levels shows that there is no Co induced surface reconstruction and up to 0.15 monolayer no Cu induced surface reconstruction. In the range
of 0.150.3 monolayer Cu the surface peak shifts to higher binding energies. This is
probably a result of a surface reconstruction of the W substrate In the core level
spectra with Co coverage the intensity of the surface peak decreases linear with Co
coverage and the intensity of a new contribution, the interface structure, increases
with Co coverage. With Co respectively Cu coverage the contribution of the step edge
shifts to lower respectively higher binding energies. This can be attributed to a charge
transfer between the adsorbate and the substrate in different directions.
Spherical Si nano-crystallites with Ge core (*20 nm in average dot diameter)
have been prepared by Darma [86] by controlling selective growth conditions of
low-pressure chemical vapour deposition (LPCVD) on ultrathin SiO2 using alternately pure SiH4 and 5 % GeH4 diluted with He. XPS results conrm the highly
selective growth of Ge on the pre-grown Si dots and subsequently complete coverage by Si selective growth on Ge/Si dots. Compositional mixing and the crystallinity of Si dots with Ge core as a function of annealing temperature in the range
of 550800 C has been evaluated by XPS analysis and conrms the diffusion of
Ge atoms from Ge core towards the Si clad accompanied by formation of GeOx at
the Si clad surface. The rst sub-band energy at the valence band of Si dot with Ge
core has been measured as an energy shift at the top of the valence band density of
state using XPS. The systematic shift of the valence band maximum towards higher
binding energy with progressive deposition in the dot formation indicate the
charging effect of dots and SiO2 layer by photoemission during measurements.
Rowella et al. [87] have obtained Ge nano-crystals from the dewetting process
during thermal annealing of an amorphous Ge layer deposited by MBE on a thin SiO2
layer on Si(001). The Ge nano-crystals were then capped with a thin layer of
amorphous Si. The mean nano-crystal size2.5 to 60 nmdepends on the initial Ge
layer thickness. Low-temperature PL measurements were performed to investigate
quantum connement effects on the Ge nano-crystal energy gap and defect states. For
the present range of particle sizes, the nano-particle PL emission appeared as a wide
near-infrared band near 900 meV although a weak conned band was also observed
for the smallest nano-particles. Further thermal annealing of the samples increased
the inter band recombination by nearly two orders of magnitude.
383
Mala et al. [88] have obtained an intense PL peaking near 0.9 eV is emitted by a
single Si1xGex nano-meter-thick layer (NL) with x 8 % incorporated into Si/
Si0.6Ge0.4 cluster multi layers (CMs). The SiGe NL PL does not saturate in output
intensity with up to 50 mJ/cm2 of excitation energy density, and it has nearly a
1,000 times shorter lifetime compared to CM PL, which peaks at 0.8 eV. These
dramatic differences in observed PL properties are attributed to different compositions and structures of the Si/SiGe NL and CM hetero-interfaces.
Carlsson et al. [89] have observed a strong oscillatory photon energy dependence for the intensity of the photoemission peaks due to quantum well states in Na
overlayers on Cu(111). The measurements are made at low photon energies
ht\8 eV with Na lms, which are between four and eight atomic layers thick. The
intensity oscillations are ascribed to the interference between the contributions to
the outgoing wave associated with the two tails of a quantum-well state.
Woodruff et al. [90] have studied normal-emission photoemission spectra from
the quantum well state in a single monolayer of Ag on V(100) have been studied as
a function of photon energy. By comparing the measured binding energy and
calculated electron momentum perpendicular to the surface in this state with the
unoccupied s-p bands of Ag and V, they have showed that the peak intensity
corresponds to the condition expected for a direct transition in V(100). This result is
consistent with the fact that the state is in many ways similar to an intrinsic
Shockley surface state of a clean surface. PL spectra obtained at 6 K with excitation
at 405 nm exhibits the sharp drop at low energy near 700 meV is due to the cut-off
in the instrumental response. A strong low-energy PL doublet is seen, with peaks
near 780 and 820 meV, together with a much weaker peak at 872 meV. The ratio of
intensities of the strong and weak peaks is the same in both samples. The intensities
of all three PL peaks decrease with increasing temperature up to 25 K, but the weak
peak decreases in intensity faster than that of the strong peaks. The weak peak at
872 meV is most likely the dipole-allowed direct-gap transition expected at
0.863 eV in the superstructure. The small difference in energy between theory and
experiment could be the result of a difference in strain within the layer in the sample
compared with the ideal (perfect) modeled structure or from assumptions in
parameter values in the model. The strong peaks at 820 and 780 meV are assigned
to the no-phonon and transverse-optic-phonon emission lines, respectively, of the
Si0.4Ge0.6 buffer layer. The *40 meV separation between the two strong peaks is
characteristic of the phonon energies in SiGe alloys. The energies of the peaks,
however, are much lower than that expected for a bulk Si0.4Ge0.6 alloy (*0.97 eV).
The energies and general appearance of these peaks is reminiscent of what has been
obtained from PL studies of SiGe nanostructures imbedded in Si. It is therefore
likely that this PL arises predominately at the Si0.4Ge0.6/superstructure interface
where there is type-II band alignment. In conclusion, they have obtained experimental evidence of the predicted direct-gap optically-allowed transition in a special
super cell comprised of a number of ultrathin layers of Si and Ge.
The II-VI semiconductor nano-particles have recently attracted a lot of attention
due to the possibility of their application in various devices. Tiwari et al. [91] have
used chemical method in synthesis of CdS nano-particles and thiophenol was used
384
as capping agent. X-ray diffraction studies of both samples were done. The dc
conductivity of CdS increases at a lower rate or is approximately constant up to
500 K and thereafter the conductivity increases at a rapid rate. Beyond Tc it is seen
that the portion of the dc versus 1,000/T is almost a straight line showing an
Arrhenius behaviour. The dielectric constant of nano-particles of CdS is found to be
larger than the corresponding values of CdS crystals. It is clearly observed that at
lower wavelengths nano-crystalline samples show a blue-shift. The three peaks of
sample (S2), A, B and C can be ascribed to the transition from Cd-O complex donor
formed by adsorbed oxygen to the valance band, Cdexcess acceptor and the
surface states, respectively.
Wilson et al. [92] have analyzed the dynamics and spectroscopy of silicon nanocrystals that emit at visible wavelengths. Size-selective precipitation and sizeexclusion chromatography cleanly separate the silicon nano-crystals from larger
crystallites and aggregates and provide direct evidence for quantum connement in
luminescence. Measured quantum yields are as high as 50 % at low temperature,
principally as a result of efcient oxide passivation. Despite a 0.9electron-volt
shift of the band gap to higher energy, the nano-crystals behave fundamentally as
indirect gap materials with low oscillator strength.
Maillard et al. [93] have shown silver nano crystals, self-organized in compact
hexagonal networks, on gold and graphite exhibit anisotropic optical properties.
From polarized electron photoemission spectroscopy, a two-photon mechanism was
demonstrated and an enhancement due to the surface plasmon resonance (SPR) of
the nano crystal lm was observed. Two SPR peaks appear, due to dipolar interactions and induced by the self-organization of silver nano crystals. This property
was used to probe the substrate effect on the plasmon resonance. Its damping was
related to particlesubstrate interactions.
Xiong et al. [94] have presented the rst photoelectron spectroscopy measurements of QDs in the gas phase. By coupling a nano-particle aerosol source to a
femto-second velocity map imaging photoelectron spectrometer, we apply robust
gas-phase photoelectron spectroscopy techniques to colloidal QDs, which typically
must be studied in a liquid solvent or while bound to a surface. Working with a
flowing aerosol of QDs offers the additional advantages of providing fresh nanoparticles for each laser shot and removing perturbations from bonding with a surface or interactions with the solvent. In this work, they have performed a twophoton photo-ionization experiment to show that the photoelectron yield per
exciton depends on the physical size of the QD, increasing for smaller dots. Next,
using effective mass modelling they have shown that the extent to which the
electron wave function of the exciton extends from the QD, the so-called
evanescent electron wave function, increases as the size of the QD decreases.
This group show that the photoelectron yield is dominated by the evanescent
electron density due to quantum connement effects, the difference in the density of
states inside and outside of the QDs, and the angle-dependent transmission probability of electrons through the surface of the QD. Therefore, the photoelectron
yield directly reflects the fraction of evanescent electron wave function that extends
outside of the QDs. The work of this group shows that gas-phase photoelectron
385
spectroscopy is a robust and general probe of the electronic structure of QDs,

enabling the rst direct measurements of the evanescent exciton wave function.
Konchenko et al. [95] have studied quantum-connement effect in the valence
band of germanium nano-dots and measured by means of photoemission
spectroscopy. The spherical dots of 310 nm in diameter were prepared on
a 0.3-nm-thick SiO2 lm on Si(111) substrate. Dot-size dependence of the band edge
matched the ones expected from the spherical QD model and calculated from the
semi-empirical simulation. Colvin et al. [96] have reported the rst application of
valence-band photoemission to a quantum-dot system. Photoemission spectra of
Cds QDs, ranging in size from 12 to 35 radius, were obtained using photon
energies of 2070 eV. The spectra are qualitatively similar to those obtained for bulk
Cds, but show a shift in the valence-band maximum with size.
The measurements of the optical and structural characteristics of various porous
Si samples have been correlated by Lockwood et al. [97]. Although the PL peak
wavelength shows no correlation with the Si nano-particle size, the optical
absorption edge exhibits a strong inverse correlation that is in excellent agreement with theoretical predictions for the optical gap in Si spheres or QDs. This
constitutes direct evidence for quantum connement effects in porous Si. The
possibility induction of light emission from silicon, an indirect band-gap material in
which radiative transitions are unlikely, raises several interesting and technologically important possibilities, especially the fabrication of a truly integrated optoelectronic microchip. Laser diode structures on GaAs substrates with an active
region employing laterally associated InAs, QDs obtained by Zhukov et al. [98] by
low-temperature MBE exhibit electroluminescence at a wavelength of 1.551.6 m
in a temperature range from 20 to 260 K.
Structural and optical properties of thin InGaAsN insertions in GaAs, grown by
MBE using an RF nitrogen plasma source, have been investigated by Volovik et al.
[99]. Nitrogen incorporation into InGaAs results in a remarkable broadening of the
luminescence spectrum as compared with that of InGaAs layer with the same
indium content. Correspondingly, a pronounced corrugation of the upper interface
and the formation of well dened nanodomains are revealed in cross-sectional and
plan-view transmission electron microscope (TEM) images, respectively. Raising
the indium concentration in InGaAsN (N < 1 %) to 35 % results in the formation of
well dened separated three-dimensional (3D) islands. The size of the nanodomains
proves that the InGaAsN insertions in GaAs should be regarded as QD structures
even in the case of relatively small indium concentrations (25 %) and layer
thicknesses (7 nm), which are below the values required for a 2D-3D transition to
occur in InGaAs/GaAs growth. Dislocation loops have been found in TEM images
of the structures emitting at 1.3 m. They are expected to be responsible for the
degradation of the luminescence intensity of such structures in agreement with the
case of long-wavelength InGaAs-GaAs QDs.
QDs formed on GaAs(100) substrates by InAs, deposition followed by (Al,Ga)
As or (In,Ga,Al)As overgrowth demonstrate a PL peak that is red shifted (up to
1.3 m) compared to PL emission of GaAs-covered QDs have been demonstrated
by Tsatsulnikov et al. [100]. The result is attributed to redistribution of InAs
386
molecules in the system in favour of the QDs, stimulated by Al atoms in the cap
layer. The deposition of a 1 nm thick AlAs cover layer on top of the InAsGaAs
QDs results in replacement of InAs molecules of the wetting layer by AlAs molecules, leading to a signicant increase in the heights of the InAs QDs, as follows
from transmission electron microscopy. This effect is directly conrmed by transmission electron microscopy indicating a transition to a VolmerWeber-like QD
arrangement.
Structural and optical properties of InAs QDs overgrown by thin (In, Ga, AI) As
layers were investigated by Tsatsulnikov et al. [101]. Adding In as well as Al
during overgrowth of the QDs results in an increase in QD size and a change in QD
shape due to reduced of in diffusion from the QDs during overgrowth and transport
of in atoms from the wetting layer. This leads to a red shift of the emission and
allows to realise 1.3\im emission using QDs in the initial stage of formation.
A two-dimensional photonic crystal with hexagonal lattice of air-holes is patterned into an active planar waveguide containing InAs/InGaAs QDs by Blokhin
et al. [102]. Variable-angle reflectivity spectroscopy is used to map out the photonic
band structure. Fano-type resonances observed in the measured reflectivity spectra
in TE (TM) polarizations along the K (M) lattice direction are attributed to
resonance coupling of the optically active photonic bands to external light. Angleresolved PL measurements are shown to trace the band structure of the leaky mode.
The revealed three-fold emission intensity enhancement of photonic crystals is
ascribed to both Purcell and Bragg scattering effects.
Krestnikov et al. [103] have reported on resonant PL of InGaN inclusions in a
GaN matrix. The structures were grown on sapphire substrates using metal-organic
chemical vapour deposition. Non resonant pulsed excitation results in a broad PL
peak, while resonant excitation into the non resonant PL intensity maximum results
in an evolution of a sharp resonant PL peak, having a spectral shape dened by the
excitation laser pulse and a radiative decay time close to that revealed for PL under
non resonant excitation. Observation of a resonantly excited narrow PL line gives
clear proof of the QD nature of luminescence in InGaNGaN samples. PL decay
demonstrates strongly non exponential behaviour evidencing coexistence of QDs
having similar ground-state transition energy, but very different electron-hole wavefunction overlap.
Borchert et al. [104] have colloidally prepared CdS/HgS/CdS QD, quantum well
nano-crystals and CdS/HgS/CdS/HgS/CdS double quantum well nano-crystals
stabilized with polyphosphates have been investigated by photoelectron spectroscopy with tuneable synchrotron radiation. High-resolution spectra reveal in addition
to a bulk species also a surface environment for Cd, whereas different S species
could not be resolved. Although not expected for the ideal structure model, Hg
occurs in two distinct environments. The total amount of Hg giving evidence for
sample in-homogeneities is of the order of 10 %. Furthermore, to some extent, the
XPS experiments allowed characterization of the onion like structure of the QD
quantum well nano-crystals. A method for layer thickness determination previously
developed for core shell nano-crystals is extended to the more complex case of QD
quantum well structures.
387
Benemanskaya et al. [105] have prepared an array of non-overgrown InAs/GaAs

QDs which has been decorated with adsorbed metal atoms in situ in ultrahigh
vacuum. Their electron and photoemission properties have been studied. The radical modication of the spectra of the threshold emission from the QDs with
increasing cesium coating has been found. Two photoemission channels have been
established; they are characterized by considerably different intensities, spectral
locations, and widths of the selective bands. It has been shown that the decoration
of the QDs makes it possible to control the electronic structure and quantum yield
of photoemission, the nature of which is related to the excitation of the electronic
states of the GaAs substrate and InAs/GaAs QDs.
Giorgio et al. [106] have discussed the application of photoemission-based
microscopy techniques to the compositional characterization of semiconductor QDs
and rings. The experimental technique is discussed in detail by them in the said
paper. Using this technique, self-assembled III-V and Ge/Si QDs have been studied.
These results have also been discussed, both for randomly nucleated and sitecontrolled QDs. Rowell et al. [107] have grown For Ge nano-dots approximately
20 nm in diameter by annealing a thin amorphous Ge layer deposited by MBE on a
mesoporous TiO2 layer on Si(001), PL was observed as a wide near-infrared band
near 800 meV. Using a tight binding theoretical model, the energy-dependent PL
spectrum was transformed into a dependence on dot size. The average dot size
determined the peak energy of the PL band and its shape depended on the size
distribution, including band gap enlargement due to quantum connement. Combining the dot sample PL with an established dependence of emission efciency on
dot diameter, it was possible to derive a dot size distribution and compare it with
results obtained independently from atomic force microscopy.
Heyderman et al. [108] have investigated the periodic square arrays of anti dots
in 10 nm-thick cobalt lms with anti dot periods, p, ranging from 2 m down to
200 nm and various ratios of anti dot size to anti dot separation, w/d. For p = 2 m,
the extent of modication of the thin lm magnetic domain structure increases with
increasing w/d, forming domains pinned diagonally between anti dots for w/d 0.2
and resulting in a two-dimensional periodic checked domain contrast commensurate
with the anti dot lattice for w/d 0.9. As p is decreased while maintaining d w,
they observed a dramatic change in the magnetic domain conguration
at p = 400 nm resulting in chains of magnetic domains running parallel to the
intrinsic hard axis and with lengths corresponding to a multiple of the anti dot
period.
Lockwood et al. [109] have grown the super-lattices of Si/SiO2 at room temperature with atomic layer precision using state of the art MBE and ultraviolet ozone
treatment. PL was observed at wavelengths across the visible range for Si layer
thicknesses 1 < d < 3 nm. The tted peak emission energy E(eV) = 1.60 + 0.72 d2 is
in accordance with effective mass theory for quantum connement by the wide-gap
SiO2 barriers and also with the bulk amorphous Si band gap. Measurements of the
conduction and valence band shifts by x-ray techniques correlate with E(d), conrming the role of quantum connement and indicating a direct band-to-band
recombination mechanism.
388
The many interesting and unique physical properties of nano-crystalline-Si/

amorphous-SiO2 superlattices (SLs) stem from their vertical periodicity and nearly
defect-free, atomically flat, and chemically abrupt nano-crystalline-Si/SiO2 interfaces. By combining a less than 5 % variation in the initial as-grown amorphous-Si
layer thickness with control over the Si nano crystal shape and crystallographic
orientation Lockwood and Tsybeskov [110] have produced via an appropriate
annealing process, systems of nearly identical Si nano-crystals having remarkably
different shapes (spheres, ovoids, bricks, etc.). Such details governing the fabrication of nano-crystalline-Si/amorphous-SiO2 SLs have dramatic effects on their
structural and optical-Raman scattering and PL-properties. The reliable fabrication
of Si-based nanostructures with control over the nano-crystal size, shape, and
crystallographic orientation is an important rst step in their applications in Si
photonics.
GaAs/AlAs SLs grown simultaneously on GaAs substrates with the (311)A and
(311)B orientations have been studied by Lyubas et al. [111] by PL and highresolution transmission electron microscopy with a Fourier analysis of images. A
periodic interface corrugation is observed for (311)B SLs. A comparison of the
structure of (311)A and (311)B SLs indicates that the corrugation occurs in both
cases and its period along the [111] direction is equal to 3.2 nm. The corrugation is
less pronounced in (311)B SLs, wherein it exhibits an additional modulation (longwavelength disorder) with the characteristic lateral size exceeding 10 nm. The
vertical correlation of regions rich in GaAs and AlAs, which is well observed in
(311)A SLs, is weak in (311)B SLs due to the occurrence of long-wavelength
disorder. The optical properties of (311)B SLs are similar to those of (100) ones and
differ radically from those of (311)A SLs. As distinct from (311)B, strong PL
polarization anisotropy is observed for (311)A SLs. It is shown that it is the
interface corrugation rather than the crystallographic (311) surface orientation that
determines the optical properties of (311)A corrugated SLs with thin GaAs and
AlAs layers.
Lyubas et al. [112] have determined PL properties of type II GaAs/AlAs SLs
grown on (311) surface by its polarity. The 3.2 nm lateral periodicity is revealed,
using a high resolution transmission electron microscopy and Fourier transform
images of SLs, however, it is rather illegible because of not clear corrugating and
due to the presence of long-wavelength (>10 nm) disorder. PL spectra of GaAs/
AlAs SLs grown on (311)A surface are strongly polarized in relation to the
direction of interface corrugation unlike the SLs grown on (311)B surface, where
corrugation was weak.
Optical phenomena in the mid-infrared range connected with inter level and inter
sub-band charge-carrier transitions in QD and quantum well (QW) hetero-structures
under optical and electrical pumping were investigated by Vorobjev et al. [113].
Spectra of inter band PL are also presented. The existence of a meta stable level in
funnel-shaped QWs is experimentally conrmed. The inter sub-band transition
dynamics in asymmetrical pairs of tunnel-coupled QWs was studied by means of
pump-and-probe time-resolved spectroscopy. The measurement of photoemission
389
spectra of SrTiO3/LaTiO3 super-lattices with a topmost SrTiO3 layer of variable

thickness has been reported in [114, 115]. Finite coherent spectral weight with a
clear Fermi cut-off was observed at chemically abrupt SrTiO3/LaTiO3 interfaces,
indicating that an electronic reconstruction occurs at the interface between the
Mott insulator LaTiO3 and the band insulator SrTiO3. For SrTiO3/LaTiO3 interfaces
annealed at high temperatures (*1,000 C), which leads to Sr/La atomic interdiffusion and hence to the formation of La1xSrxTiO3 like material, the intensity of
the incoherent part was found to be dramatically reduced whereas the coherent part
with a sharp Fermi cut-off is enhanced due to the spread of charge. These important
experimental features are well reproduced by layer dynamical-mean-eld-theory
calculation.
Photonic devices are becoming increasingly important in information and
communication technologies. But attempts to integrate photonics with silicon-based
microelectronics are hampered by the fact that silicon has an indirect band gap,
which prevents efcient electron-photon energy conversion. Light-emitting siliconbased materials have been made using band-structure engineering of SiGe and SiC
alloys and Si/Ge SLs, and by exploiting quantum-connement effects in nanoscale
particles and crystallites [116]. The discovery [117, 118] that silicon can be etched
electrochemically into a highly porous form that emits light with a high quantum
yield has opened up the latter approach to intensive study [119125]. Lu et al. [126]
have reported the fabrication, by MBE technique, of well-dened SLs of silicon and
SiO2, which emit visible light through PL. The said group have shown that this light
emission can be explained in terms of quantum connement of electrons in the twodimensional silicon layers and these superlattice structures are robust and compatible with standard silicon technology.
Lao et al. [127] have used internal photoemission spectroscopy to determine the
conduction band offset of a type-II InAs/GaSb super-lattice (T2SL) pBp photodetector to be eV at 78 K, conrming its unipolar operation. It is also found that
phonon-assisted hole transport through the B-region disables its two-colour detection mode around 140 K. In addition, photoemission yield shows a reduction at
about an energy of longitudinal-optical phonon above the threshold, conrming
carrier-phonon scattering degradation on the photo-response. These results may
indicate a pathway for optimizing T2SL detectors in addition to current efforts in
material growth, processing, substrate preparation, and device passivation 0.004
(0.004). The natural considerations that constrain silicon from emitting light
efciently are examined, as are several engineered solutions to this limitation by
Iyer and Xie [128]. These include intrinsic and alloy-induced luminescence;
radioactively active impurities; quantum-conned structures, including zone folding
and the recent developments in porous silicon; and a hybrid approach, the integration of direct band-gap materials onto silicon.
Lin et al. [129] have proposed a new approach for the fabrication of n-type
porous silicon layer. A hole-rich p-layer is arranged underneath the n-layer, and the
np-junction is under forward biased condition in the etching process. Therefore
sufcient holes can drift straight-upward and pass across the np-junction from
p-region to n-region to participate in electrochemical reaction during the etching
390
process with an unfailing supply. Illumination is an optional hole-supplier in this

approach, so the problem of illumination-depth limitation can be overcome. Strong
visible PL emissions are demonstrated on the hole-poor n-type porous layer at about
650 nm.
Lockwood et al. [130] have reported the optical properties of porous GaAs
formed electrochemically on n- and p-type GaAs in HCl electrolyte. The porous
structure comprises GaAs crystallites ranging in size from micrometers to nanometers and under certain chemical conditions other transparent crystallites of
As2O3 and Ga2O3 form. PL measurements at 295 K reveal an infrared PL
at *840 nm and a green PL at *540 nm, which could easily be seen by the
naked eye in some samples. The infrared and green PL peak wavelength and
intensity varied from sample to sample consistent with an assignment to quantum
connement effects in GaAs micro- and nano-crystallites, respectively. The many
and diverse approaches to materials science problems have greatly enhanced the
ability in recent times to engineer the physical properties of semiconductors. Silicon, of all semiconductors, underpins nearly all microelectronics today and will
continue to do so for some time to come. However, in optoelectronics and, more
recently, in photonics, the severe disadvantage of an indirect band gap has limited
the application of elemental silicon.
Electroluminescent devices have been developed recently that are based on new
materials such as porous silicon and semiconducting polymers. By taking advantage of developments in the preparation and characterization of direct-gap semiconductor nano-crystals, and of electroluminescent polymers, Colvin et al. [131]
have constructed a hybrid organic/inorganic electroluminescent device. Light
emission arises from the recombination of holes injected into a layer of semiconducting p-paraphenylene vinylene (PPV) with electrons injected into a multilayer
lm of cadmium selenide nano-crystals. Close matching of the emitting layer of
nano-crystals with the work function of the metal contact leads to an operating
voltage of only 4 V. At low voltages emission from the CdSe layer occurs. Because
of the quantum size effect the colour of this emission can be varied from red to
yellow by changing the nano-crystal size. At higher voltages green emission from
the polymer layer predominates. Thus this device has a degree of voltage tunability
of colour.
Rogach et al. [132] have reported that the colloidal semiconductor nano crystals
are promising luminophores for creating a new generation of electroluminescence
devices. Research on semiconductor nano crystal based light-emitting diodes
(LEDs) has made remarkable advances in just one decade: the external quantum
efciency has improved by over two orders of magnitude and highly saturated
colour emission is now the norm. Although the device efciencies are still more
than an order of magnitude lower than those of the purely organic LEDs there are
potential advantages associated with nano crystal-based devices, such as a spectrally pure emission colour, which will certainly merit future research. Further
developments of nano crystal-based LEDs will be improving material stability,
understanding and controlling chemical and physical phenomena at the interfaces,
and optimizing charge injection and charge transport.
391
Highly luminescent (CdSe)ZnS nano crystals, with band edge emission in the
red region of the visible spectrum, were successfully synthesized by Reboud et al.
[133] and incorporated in a resist, namely mr-NIL 6000. The nano composite
material was imprinted by using conventional nano imprint lithography (NIL)
process. We report on the fabrication and characterization of nano imprinted
photonic crystals in this new functional material. Experiments showed good imprint
properties of the NC/polymer based material and that the surface nano structuration
improves the light extraction efciency by over 2 compared to a nano imprinted
unpatterned surface.
Bertsch et al. [134] have calculated the two-photon ionization of clusters for
photon energies near the surface plasmon resonance. The plasmon was described in
a schematic jellium-RPA model assuming a separable residual interaction between
electrons determined so that the plasmon energy is reproduced. The ionization rate
of a double plasmon excitation was calculated perturbatively. In Na + 93 clusters
they found an ionization rate of the order of at most 0.050.10 fs1. This rate was
used to determine the ionization probability in an external eld in terms of the
number of absorbed photon pairs and the duration of the eld. They discussed the
dependence of the results on the choice of their empirical separable force. The
number of emitted electrons per pair of absorbed photons was found to be small, in
the range 105103 H.
Fiorini et al. [135] have presented a brief survey of quantum effects in amorphous superstructures, with a particular attention to optical properties. The determination of interface properties by superstructure investigation is discussed, with a
special emphasis on the amorphous silicon/amorphous silicon-carbon system. In the
review Lockwood [136] has considered a number of diverse approaches to engineering efcient light emission in silicon nanostructures. These different approaches
are placed in context and their prospects are assessed for applications in siliconbased photonics.
Yoshimatsu et al. [137] have investigated changes in the electronic structures of
digitally controlled La0.6Sr0.4MnO3 (LSMO) layers sandwiched between SrTiO3 as
a function of LSMO layer thickness in terms of hard x-ray photo-emission-spectroscopy (HX-PES). The HX-PES spectra show the evolution of Mn 3d derived
states near the Fermi level and the occurrence of metal-insulator transition at 8ML.
The detailed analysis for the thickness dependent HX-PES spectra reveals the
existence of the less conducting and nonmagnetic transition layer with a lm
thickness of about 4ML in the interface region owing to signicant interaction
through the interface.
The PL spectroscopy has been used by Rowell et al. [138] to study the incorporation of C in several samples consisting of strained Si1xyGexCy epi-layers
lattice matched to Si(001). To obtain the total C concentration, these samples were
characterized by both SIMS and Auger emission spectroscopy, and X-ray diffraction data was analyzed to obtain the substitutional C concentration. The difference
of the total and substitutional C concentrations, i.e., the non-substitutional carbon
fraction, was found to be directly correlated with specic spectral lines in both the
room-temperature Raman and low-temperature PL spectra. Shimoda et al. [139]
392
studied the effects of structure and morphology on lithium storage in single-wall

carbon nano tube (SWNT) bundles by electrochemistry and nuclear magnetic
resonance techniques. SWNTs were chemically etched to variable lengths and were
intercalated with Li. The reversible Li storage capacity increased from LiC(6) in
close-end SWNTs to LiC(3) after etching, which was twice the value observed in
intercalated graphite. All the nano tubes became metallic upon intercalation of Li,
with the density of states at the Fermi level increasing with increasing Li concentration. The enhanced capacity is attributed to Li diffusion into the interior of the
SWNTs through the opened ends and sidewall defects.
In this monograph, we have studied the EP from quantum conned HD nonlinear optical, III-V, II-VI, GaP, Ge, PtSb2, stressed materials, GaSb, IV-VI, Tellurium, II-V, Bi2Te3, III-V, II-VI, IV-VI and HgTe/CdTe quantum wire superlattices HD with graded interfaces, III-V, II-VI, IV-VI and HgTe/CdTe HD effective
mass superlattices under magnetic quantization, quantum conned effective mass
HD superlattices and HD superlattices of optoelectronic materials under intense
electric eld and light waves with graded interfaces on the basis of appropriate
carrier energy spectra. Finally it may be noted that although we have considered the
EP from a plethora of quantized materials having different band structures theoretically, the detailed experimental works are still needed for an in-depth study of
the EP from such low-dimensional HD systems as functions of externally controllable quantities which, in turn, will add new physical phenomenon in the regime
of the electron motion in HD nano structured materials and related topics.

(R:9:1) Investigate experimentally the EP for all the HD systems as discussed in
this monograph in the presence of arbitrarily oriented strain.
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134. G.F. Bertsch, N. Van Giai, N. Vinh, Mau Phys. Rev. A 61, 033202 (2000)
135. P. Fiorini, M. de Seta, F. Evangelisti, Hel. Phys. Acta 62, 070645 (1989)
136. D.J. Lockwood, J. Mat. Sci. Mat. Elec. 20, 235 (2009)
137. K. Yoshimatsu, K. Horiba, H. Kumigashira, E. Ikenaga, M. Oshima, Appl. Phys. Lett. 94,
071901 (2009)
138. N.L. Rowell, D.J. Lockwood, J.-M. Baribeau, Thin Solid Films 517, 128 (2008)
139. H. Shimoda, B. Gao, X.P. Tang, A. Kleinhammes, L. Fleming, Y. Wu, O. Zhou, Phys. Rev.
Lett. 88, 015502 (2002)
Chapter 10
Conclusion and Future Research
This monograph deals with the EP in various types of low dimensional HD

materials. The intense photo excitation, quantization and strong electric eld alter
profoundly the basic band structures, which, in turn, generate pinpointed knowledge regarding EP in various HDS and their nanostructures having different carrier
energy spectra. The in-depth experimental investigations covering the whole
spectrum of solid state and allied science in general, are extremely important to
uncover the underlying physics and the related mathematics. We have presented the
simplied expressions of EP for few HD quantized structures together with the fact
that our investigations are based on the simplied k.p formalism of solid-state
science without incorporating the advanced eld theoretic techniques. In spite of
such constraints, the role of band structure behind the curtain, which generates, in
turn, new concepts are truly amazing and discussed throughout the text.
We present the last set of few open research problems in this pin pointed topic of
research of modern physics.
(R.10.1)
(R.10.2)
(R.10.3)
(R.10.4)
(R.10.5)
Investigate the multi-photon EP from multiple HD QWs, NWs and

QBs of negative refractive index, organic, magnetic, heavily doped,
disordered and other advanced optical materials in the presence of
arbitrarily oriented photo-excitation.
Investigate multi-photon EP from cylindrical and wedge shaped HD
QBs of all the appropriate problems of R.10.1 in the presence of
arbitrarily photo-excitation.
Investigate the multi-photon EP in the presence of an arbitrarily
oriented photo-excitation and quantizing magnetic eld for all the
appropriate cases of R.10.1.
photo-excitation and alternating non-quantizing electric eld for all the
oriented photo-excitation and non-uniform non-quantizing electric
eld for all the appropriate cases of R.10.2.

DOI 10.1007/978-3-319-11188-9_10
397
398
(R.10.6)
(R.10.7)
(R.10.8)
(R.10.9)
(R.10.10)
(R.10.11)
(R.10.12)
10 Conclusion and Future Research

oriented photo-excitation and crossed electric and quantizing magnetic
elds for all the appropriate cases of R.10.1.
oriented photo-excitation and quantizing magnetic eld for all the
photo-excitation and alternating non-quantizing electric eld for all the
oriented photo-excitation and non-uniform non-quantizing electric
eld for all the cases of R.10.1.
oriented photo-excitation and crossed electric and quantizing magnetic
elds for all the appropriate cases of R.10.1.
Investigate the multi-photon EP from all the systems and the open
research problems of Chaps. 15 in the presence of many body effects.
Investigate the multi-photon EP from quantum conned HD III-V, IIVI, IV-VI, HgTe/CdTe superlattices with graded interfaces together
with short period, strained layer, random, Fibonacci, polytype and
sawtooth superlattices in this context in the presence of arbitrarily
oriented photo-excitation.
(R.10.13)
(a) Investigate the static photoelectric effect for all the appropriate
problems of this monograph.
(b) Investigate all the appropriate problems for open HDQB of different materials as discussed in this monograph.
(R.10.14)
Investigate the EP in the presence of a quantizing magnetic eld under

exponential, Kane, Halperin, Lax and Bonch-Bruevich band tails [1]
for all the problems of this monograph of all the HD materials whose
unperturbed carrier energy spectra are dened in Chap. 1 by including
spin and broadening effects.
Investigate all the appropriate problems after proper modications
introducing new theoretical formalisms for the problems as dened in
(R.10.14) for HD negative refractive index, macro molecular, nitride
and organic materials.
Investigate all the appropriate problems of this monograph for all types
of HD quantum conned p-InSb, p-CuCl and semiconductors having
diamond structure valence bands whose dispersion relations of the
carriers in bulk materials are given by Cunningham [2], Yekimov et al.
[3] and Roman and Ewald [4] respectively.
Investigate the influence of defect traps and surface states separately on
the EP of the HD materials for all the appropriate problems of all the
chapters after proper modications.
(R.10.15)
(R.10.16)
(R.10.17)
10
(R.10.18)
(R.10.19)
(R.10.20)
(R.10.21)
(R.10.22)
(R.10.23)
(R.10.24)
(R.10.25)
(R.10.26)
(R.10.27)
(R.10.28)
(R.10.29)
(R.10.30)
(R.10.31)
(R.10.32)
(R.10.33)
(R.10.34)
399
Investigate the EP of the HD materials under the condition of nonequilibrium of the carrier states for all the appropriate problems of this
monograph.
Investigate the EP for all the appropriate problems of this monograph
for the corresponding HD p-type semiconductors and their
nanostructures.
for all types of HD semiconductors and their nanostructures under
mixed conduction in the presence of strain.
for all types of HD semiconductors and their nanostructures in the
presence of hot electron effects.
for all types of HD semiconductors and their nanostructures for
nonlinear charge transport.
for all types of HD semiconductors and their nanostructures in the
presence of strain in an arbitrary direction.
Investigate all the appropriate problems of this monograph for strongly
correlated electronic HD systems in the presence of strain.
Investigate all the appropriate problems of this chapter in the presence
of arbitrarily oriented photon eld and strain.
of HD nanotubes in the presence of strain.
Investigate all the appropriate problems of this monograph for various
types of pentatellurides in the presence of strain.
Investigate all the appropriate problems of this monograph for HD
Bi2Te3Sb2Te3 super-lattices in the presence of strain.
Investigate the influence of temperature-dependent energy band
constants for all the appropriate problems of this monograph.
Investigate the influence of the localization of carriers on the EP in
HDS for all the appropriate problems of this monograph.
Investigate EP for HD p-type SiGe under different appropriate physical
conditions as discussed in this monograph in the presence of strain.
Investigate EP for different metallic alloys under different appropriate
physical conditions as discussed in this monograph in the presence of
strain.
Investigate EP for different intermetallic compounds under different
appropriate physical conditions as discussed in this monograph in the
presence of strain.
Investigate EP for HD GaN under different appropriate physical
conditions as discussed in this monograph in the presence of strain.
400
(R.10.35)
(R.10.36)
(R.10.37)
(R.10.38)
(R.10.39)
(R.10.40)
(R.10.41)
(R.10.42)
(R.10.43)
(R.10.44)
(R.10.45)
(R.10.46)
(R.10.47)
(R.10.48)
(R.10.49)
(R.10.50)
10 Conclusion and Future Research
Investigate EP for different disordered HD conductors under different

appropriate physical conditions as discussed in this monograph in the
presence of strain.
Investigate EP for various semimetals under different appropriate
physical conditions as discussed in this monograph in the presence of
strain.
Investigate all the appropriate problems of this monograph for HD
Bi2Te3xSex and Bi2xSbxTe3 respectively in the presence of strain.
of skutterudites in the presence of strain.
Investigate all the appropriate problems of this monograph in the
presence of crossed electric and quantizing magnetic elds.
presence of crossed alternating electric and quantizing magnetic elds.
presence of crossed electric and alternating quantizing magnetic elds.
presence of alternating crossed electric and alternating quantizing
magnetic elds.
presence of arbitrarily oriented pulsed electric and quantizing magnetic
elds.
presence of arbitrarily oriented alternating electric and quantizing
magnetic elds.
presence of crossed in homogeneous electric and alternating quantizing
magnetic elds.
presence of arbitrarily oriented electric and alternating quantizing
magnetic elds under strain.
presence of arbitrarily oriented electric and alternating quantizing
magnetic elds under light waves.
presence of arbitrarily oriented pulsed electric and alternating quantizing magnetic elds under light waves.
presence of arbitrarily oriented inhomogeneous electric and pulsed
quantizing magnetic elds in the presence of strain and light waves.
(a) Investigate the EP for all types of HD materials of this monograph in the presence of many body effects strain and arbitrarily
oriented light waves respectively.
10
401
(b) Investigate all the appropriate problems of this chapter for the
Dirac electron.
(c) Investigate all the problems of this monograph by removing all
the physical and mathematical approximations and establishing
the respective appropriate uniqueness conditions.
The formulation of EP for all types of HD materials and their quantum conned
counter parts considering the influence of all the bands created due to all types of
quantizations after removing all the assumptions and establishing the respective
appropriate uniqueness conditions is, in general, an extremely difcult problem.
300 open research problems have been presented in this monograph and we hope
that the readers will not only solve them but also will generate new concepts, both
theoretical and experimental. Incidentally, we can easily infer how little is presented
and how much more is yet to be investigated in this exciting topic which is the
signature of coexistence of new physics, advanced mathematics combined with the
inner re for performing creative researches in this context from the young scientists since like Kikoin [5] we rmly believe that A young scientist is no good if his
teacher learns nothing from him and gives his teacher nothing to be proud of. In the
mean time our research interest has been shifted and we are leaving this particular
beautiful topic with the hope that (R.10.50) alone is sufcient to draw the attention
of the researchers from diverse elds and our readers are surely in tune with the fact
that Exposition, criticism, appreciation is the work for second-rate minds [6].
References
1. B.R. Nag, Electron Transport in Compound Semiconductors, vol. 11, Springer Series in Solid
State Sciences (Springer, Berlin, 1980)
2. R.W. Cunningham, Phys. Rev. 167, 761 (1968)
3. A.I. Yekimov, A.A. Onushchenko, A.G. Plyukhin, Al.L. Efros, J. Expt. Theor. Phys. 88, 1490
(1985)
4. B.J. Roman, A.W. Ewald, Phys. Rev. B 5, 3914 (1972)
5. I.K. Kikoin, Science for Everyone: Encounters with Physicists and Physics (Mir Publishers,
Russia, 1989), p. 154
6. G.H. Hardy, A Mathematicians Apology (Cambridge University Press, Cambridge, 1990),
p. 61
Chapter 11
Appendix A: The EP from HDS Under

Magnetic Quantization
11.1 Introduction
It is well known that the band structure of semiconductors can be dramatically
changed by applying the external elds. The effects of the quantizing magnetic eld
on the band structure of compound semiconductors are more striking and can be
observed easily in experiments [167]. Under magnetic quantization, the motion of
the electron parallel to the magnetic eld remains unaltered while the area of the
wave vector space perpendicular to the direction of the magnetic eld gets quantized in accordance with the Landaus rule of area quantization in the wave-vector
space [3967]. The energy levels of the carriers in a magnetic eld (with the
component of the wave-vector parallel to the direction of magnetic eld be equated
with zero) are termed as the Landau levels and the quantized energies are known as
the Landau sub-bands. It is important to note that the same conclusion may be
arrived either by solving the single-particle time independent Schrdinger differential equation in the presence of a quantizing magnetic eld or by using the
operator method. The quantizing magnetic eld tends to remove the degeneracy and
increases the band gap. A semiconductor, placed in a magnetic eld B, can absorb
radiative energy with the frequency x0 jejB=mc . This phenomenon is known
as cyclotron or diamagnetic resonance. The effect of energy quantization is
experimentally noticeable when the separation between any two consecutive Landau levels is greater than kB T. A number of interesting transport phenomena
originate from the change in the basic band structure of the semiconductor in the
presence of quantizing magnetic eld. These have been widely been investigated
and also served as diagnostic tools for characterizing the different materials having
various band structures [6872]. The discreteness in the Landau levels leads to a
whole crop of magneto-oscillatory phenomena, important among which are

DOI 10.1007/978-3-319-11188-9_11
403
404
11 Appendix A: The EP from HDS Under Magnetic Quantization
(i) Shubnikov-de Haas oscillations in magneto-resistance; (ii) De Haas-van Alphen

oscillations in magnetic susceptibility; (iii) magneto-phonon oscillations in thermoelectric power, etc.
In this chapter in Sect. 11.2.1, of the theoretical background, the EP has been
investigated in HD non linear optical semiconductors in the presence of a quantizing magnetic eld. Section 11.2.2 contains the results for HD III-V, ternary and
quaternary compounds in accordance with the three and the two band models of
Kane. In the same section the EP in accordance with the models of Stillman et al.
and Palik et al. have also been studied for the purpose of relative comparison.
Section 11.2.3 contains the study of the EP for HD II-VI semiconductors under
magnetic quantization. In Sect. 11.2.4, the EP in HD IV-VI materials has been
discussed in accordance with the models of Cohen, Lax, Dimmock, Bangert and
Kastner and Foley and Landenberg respectively. In Sect. 11.2.5, the magneto-EP
for the stressed HD Kane type semiconductors has been investigated. In
Sect. 11.2.6, the EP in HD Te has been studied under magnetic quantization. In
Sect. 11.2.7, the magneto-EP in n-GaP has been studied. In Sect. 11.2.8, the EP in
HD PtSb2, has been explored under magnetic quantization. In Sect. 11.2.9, the
magneto-EP in HD Bi2Te3 has been studied. In Sect. 11.2.10, the EP in HD Ge has
been studied under magnetic quantization in accordance with the models of Cardona et al. and Wang and Ressler respectively. In Sects. 11.2.11 and 11.2.12, the
magneto-EP in HD n-GaSb and II-V compounds has respectively been studied. In
Sect. 11.2.13 the magneto EP in HD Pb1xGexTe has been discussed. The last
Sect. 11.3 contains 52 open research problems for this Appendix.

The dispersion relation under magnetic quantization in non-linear optical materials
can be written as
cE
D2k D2?
h2 kz2
h2 ks2
eBhEg Eg0 D?
f
E
f
E

E
E
3
4
g0
2m?
2mk
6 Eg0 23 D?
3Dk
11:1
?
where f3 E EEg Eg g D
E Eg E Eg 23 Dk dE Eg 13 Dk 19 D2k D2?
2
D?
3
and f4 E
Eg Eg Dk
E
Eg 23Dk
Eg E Eg 23 Dk
11.2
Theoretical Background
405

bk c?
abk 2 ack bk ck abk
h2 kz2
h2 k 2
s f
E
E

2mk
b? ck 2m?
ck
c2k
bk
bk
1
a
1
a
1
1 1 1 1

ck
ck
ck
ck
ck
ck ck E 1
2
2
abk
2
2 abk Dk D?
dE D2k D2?
g
9
9 ck ck E 1
ck
11:2
2
2
h2 k2 bk c? d Dk D?
a

s f
aE 1
2m? b? ck 2
6Dk
ck
d Dk D?
g

2
6Dk
ck E 1
q1
q2

e1
E Eg E Eg 23 Dk
2
e1
where
D
eBhEg 23Dk Eg D?
6Eg Dk Eg 23D? ; q1
Eg G1
; G1
23Dk
Eg0 d
D2k D2?
3Dk
and
D2?
q2 2D3 k 3k 3Dk d
Therefore, the dispersion relation of the conduction electrons in HD non-linear
optical semiconductors in the presence of a quantizing magnetic eld B can be
written following the methods as developed in Chap. 1 as
h2 kz2
U1; E; n; gg iU2; E; n; gg
2mk
11:3a
where
1 Erf E=gg 1 abk
eB
1 bk c ?
f
U1; E; n; gg n
h0 E; gg
m?
2 ck b?
ck
2
ack bk ck abk
bk 1 Erf E=gg
1
a

c0 E; gg 1 1
ck
ck
ck
2
c2k
bk
abk
1
a
1 1 cb1 ; E; gg
dc0 E; gg
ck
ck
ck
ck
1 Erf E=gg
2
2 abk 2

Dk D2? cb1 ; E; gg g
D2k D2?
9
9 ck
2
2
2
heB
1 bk c? d Dk D?
f
acb2 ; E; gg
m?
2 c k b? 2
6Dk
2
2
d Dk D?
q e1
q2 e1

ck cb1 ; E; gg g 1 cb2 ; E; gg
cb3 ; E; gg ;
2
6Dk
Eg
Eg 23 Dk
406
1 Erf E=gg 1 1
bk
a
1 1 Db1 ; E; gg
U2; E; n; gg
ck
ck
ck
2
2 abk 2
h

eB
1
Dk D2? Db1 ; E; gg n
9 ck
m?
2
f
2
2
bk c? d Dk D?

aDb2 ; E; gg
c k b? 2
6Dk
d Dk D?
q e1

ck Db1 ; E; gg g 1 Db2 ; E; gg
2
6Dk
Eg
q2 e1

Db3 ; E; gg
Eg 23 Dk
2
b1 ck ; b2
1
1
a; b3
;
Eg
Eg 23 Dk
X1 expp2
2
1 bi E
4
p expu2i
g sinhpui ; ui
f
;
p1
p
bi gg
bi g g p
p
and Dbi ; E; gg b gp expu2i
Cbi ; E; gg
i g
The EEM at the Fermi Level can be written from (11.3a) as

0
m EFBHD ; n; gg mk U1;
EFBHD ; n; gg
11:3b
where EFBHD is the Fermi energy in this case.

Therefore the double valued EEM in this case is a function of Fermi energy,
magnetic eld, quantum number and the scattering potential together with the fact
that the EEM exists in the band gap which is the general characteristics of HD
materials.
The complex density-of-states function under magnetic quantization is given by
NB E NBR E iNBI E
nmax
eB p X
x0
iy0
p p
2 2 2m11
2 x 2 y
2p h
n0
where
x
y
q
U1; E; n; gg 2 U2; E; n; gg 2 U1; E; n; gg
2
q
2
U1; E; n; gg U2; E; n; gg 2 U1; E; n; gg
2
and x0 and y0 are the differentiations of x and y with respect to energy E.

Therefore, from (11.4a) we can write
11:4a
11.2
407
q
2mk X
nmax 0
x
p
NBR E
2
2
4p h n0 x
eB
11:4b
and
q
nmax 0
2mk X
y
NBI E
p
2
2
4p h n0 y
eB
11:4c
The electron concentration under the condition of extreme carrier degeneracy is

given by
q
n
max q
gv eB 2mk X
n0 2 2 p
U1; EFBHD ; n; gg 2 U2; EFBHD ; n; gg 2 U1; EFBHD ; n; gg 1=2
2p h
2 n0
11:5
The magneto EP in this case is given by
JB
nmax
X
a0 e2 gv BkB T
Real
part
of
F0 g1A
2
2p2 h
n0
11:6
where
g1A kB T1 EFHBD EL1 W ht
where EL1 is the complex Landau sub-band energy which can be obtained from
(11.3a) by substituting kz 0 and E EL1 :
11.2.2 The EP from HD Kane Type III-V, Ternary

and Quaternary Semiconductors Under Magnetic
Quantization
(a) The electron energy spectrum in III-V semiconductors under magnetic
quantizaion is given by
EE Eg E Eg DEg 23 D
h2 kz2
1
eBhD

h
x
0
2
2
2mc 6mc E Eg 23 D
Eg Eg DE Eg 3 D
11:7
408
ab 2
ac bc ab
1
a
b
1
a
b
1
E
E 1 1 1 1
c
c2
c
c
c
c
c
c 1 cE
h2 kz2
1
eBhD
n hx0

2
2mc 6mc 1 cEEg 23 D
where a E1g ; b Eg1D and c E 1 2D

g
Therefore
ab
ab bc ab
1
a
b
1
I5
I4 1 1 n hx0 I1
c
c2
c
c
c
2
h2 kz2
I1
g GC; E; gg iHC; E; gg
2mc
11:8
hD
where g 1c 1 ac1 bc 6m eB
;
E 2D
c
2
1
X
expp4
2
1 CE
2
p expu
g sinhpu; u
f
;
GC; E; gg
p
Cgg
Cgg p
p1
p
p
expu2
HC; E; gg
Cgg
Therefore
h2 kz2
2mc
1 Erf E=gg 1
1 Erf E=gg 1
ab
ac bc ab
h0 E; gg

c0 E; gg
c
c2
2
2
1 Erf E=gg 1
1
a
b
1
GC; E; gg iHC; E; gg
1 1 n hx0 g
c
c
c
2
2
11:9
Therefore the dispersion relation is given by
h2 kz2
U3; E; n; gg iU4; E; gg
2mc
11:10a
where
1 Erf E=gg 1
ab
ac bc ab
c0 E; gg

h0 E; gg
2
c
c2
1 Erf E=gg 1 1
a
b
1 1

c
c
c
2
1 Erf E=gg 1
1
n hx0 g
GC; E; gg
2
2
U3; E; n; gg
1Erf E=g
g 1
and U4; E; gg g
HC; E; gg
2
The complex Landau energy EnHD1 in this case can be obtained by substituting
kz 0 and E EnHD in (11.10a)
11.2
409

0
EFBHD ; n; gg
m EFBHD ; n; gg mk U3;
11:10b
Thus the EEM is a function of Fermi energy, Landau quantum number and
scattering potential together with the fact it is double valued due to spin.
The complex density of states function under magnetic quantization is given by
NB E NBRI E iNBI1 E
nmax
eB p X
x0
iy0
2 2 2mc
p1 p1
2 x1 2 y1
2p h
n0
11:11a
where
x1
y1
q
U3; E; n; gg 2 U4; E; n; gg 2 U3; E; n; gg
2
q
2
U3; E; n; gg U4; E; n; gg 2 U3; E; n; gg
and x01 and y01 are the differentiations of x and y with respect to energy E.
From (11.11a) we can write
p nmax 0
eB 2mc X
x1
11:11b
NBR1 E
p
2
2
4p h n0 x1
p nmax 0
eB 2mc X
y1
and NBI1 E
p
2
2
4p h n0 y1
11:11c
The electron concentration under the condition of extreme degeneracy is given by

n0
nmax q
gv eB p X
m
U3; EFBHD ; n; gg 2 U4; EFBHD ; n; gg 2
c
2p2
h2
n0
U3; EFBHD ; n; gg 1=2
11:12a

JB
where
nmax
X
a0 e2 gv BkB T
Real
part
of
F0 g2A
2p2 h2
n0
11:12b
410

(11.10a) by substituting kz 0 and E EL2
(b) Two band model of Kane
The magneto-dispersion law in this case is given by
h2 k2
1
1
c2 E; gg n hx0 g l0 B
2
2
2mc
11:13a
where g is the magnitude of the effective g factor at the edge of the conduction
band and l0 is the Bohr magnetron.
m EFBHD ; gg mc c02 EFBHD ; gg
11:13b
Thus EEM is independent of quantum number.

The electron concentration under the condition of extreme degeneracy is given
by
n0
nmax
1
gv eB p X
m
U5; EFBHD ; n; gg 2
c
p2 h2
n0
11:14a
where
1
1
U5; EFBHD ; n; gg c2 EFBHD ; gg n hx0 g l0 B
2
2
JB
nmax
a0 e2 gv BkB T X
F0 g3A
2p2 h2
n0
11:14b
where
where EL3 is the Landau sub-band energy which can be obtained from (11.13a) by
substituting kz 0 and E EL3
11.2
(c)
411
Parabolic Energy Bands

The magneto-dispersion law in this case is given by
h2 k2
1
1
c3 E; gg n hx0 g l0 B
2
2
2mc
11:15a

m EFBHD ; gg mc c03 EFBHD ; gg
11:15b
Thus the EEM in heavily doped parabolic energy bands is a function of Fermi
energy and scattering potential whereas in the absence of band-tails the same mass
is a constant quantity invariant of any variables.
by
n0
nmax
1
gv eB p X
m
U6; EFBHD ; n; gg 2
c
2
2
p h
n0
11:16a
where U6; EFBHD ; n; gg c3 EFBHD ; gg n 12hx0 12 g l0 B

JB
nmax
a0 e2 gv BkB T X
F0 g4A
2p2 h2
n0
11:16b
where g4A kB T1 EFHBD EL4 W ht where EL4 is the Landau sub-band
energy which can be obtained from (11.15a) by substituting kz 0 and E EL4
(d)
The model of Stillman et al.

The (1.107) under the condition of band tailing assumes the form
k2
t11
q
t11 2 4t12 c3 E; gg
2t12
11:17
Therefore the magneto dispersion law is given by

kz2 U7 E; n; gg
11:18a
412
where U7 E; n; gg
t11
t11 4t12 c3 E;gg

2t12
1
2eB
h n 2

m EFBHD ; gg
h2 0
U EFBHD ; n; gg
2 7
11:18b

by
n0
nmax
1
gv eB X
U7 EFBHD ; n; gg 2
p2 h n0
11:19a

JB
nmax
a0 e2 gv BkB T X
F0 g5A
2
2p2 h
n0
11:19b
where
substituting kz 0 and E EL5
(e)
The model of Palik et al.
To the fourth order in effective mass theory and taking into account the interactions of the conduction, light hole, heavy-hole and split-off hole bands, the
electron energy spectrum in III-V semiconductors in the presence of a quantizing
magnetic eld ~
B can be written as
h2 kz2 1 mc
h2 kz2
1
1
E J31 n hx0
hx0 g0 k30 an hx0 2 k31 ahx0
2
2
2mc 4 m0
2mc

h2 kz2
1
k32 a hx0 n
11:20
2
2mc
11.2
413
where
h
i
1
hx0 1 y11 =2 x11 2 J32 ;
J31 a
2

1
1
1 x11 2 2 x211 2 x11 y11 1 x211 1 x11 1 y11 ;
J32
3
2

1

x
1

y
11
11
; k30 1 y11 1 x11
g0 2 1
2 x11
y11
("
#
)

3
1 y11
2
2
y11 ;
2 x11 x11
2
3
2 x11 2
#
)

("

1 x11
3
1

y
2
11
1 x11 y11 ;
2 x11 x211
k31 1 y11
2 x11
2
3
2 x11 2

1
1
D
mc
k32 1 x211 = 1 x11 1 y11 2 ; x11 1 1 and y11
m0
2
2
Eg
Under the condition of heavy doping, the (11.20) assumes the form
J34 kz4 J35; nkz2 J36; n c3 E; gg 0
where
J34 ak32 h2 =2mc 2 ; J35; n
h2
2mc
11:21
i
h2
h2
1
ak31 hx0 2m
ak
h

x

n
32
0
2mc
2 ;
c

1 mc
1
1
J36; n J31 hx0 g0 k30 ahx0 2 n k32 ahx0 n 2
4 m0
2
2
kz2 A35; E; n; gg
11:22a
where
A35; E; n; gg 2J34
1
q
J35; n J35; n2 4J34 J36; n c3 E, gg

m EFBHD ; n; gg
h2 0
A EFBHD ; n; gg
2 35;
11:22b
414
Thus, the EEM is a function of Fermi energy, Landau quantum number and the
scattering potential.
n0
nmax
eBgv X
Y34HD EFBHD ; n; gg Z34HD EFBHD ; n; gg
2p2 h n0
11:23a
q q
where Y34HD EFBHD ; n; gg A35HD; EFBHD ; n; gg A35HD; EFBHD ; n; gg
s0
P
LB rY34HD EFBHD ; n; gg
and Z34HD EFBHD ; n; gg
c1

JB
nmax
a0 e2 gv BkB T X
F0 g6A
2
2p2 h
n0
11:23b
where
substituting kz = 0 and E = EL6.

The magneto dispersion relation of the carriers in heavily doped II-VI semiconductors are given by
c3 E; gg a00
2eB
1
2eB
1 1
n b00 kz2 k00
n 2
h
2
h
2
11:24

kz2 U8 E; n; gg
where U8 E; n; gg b00 1 c3 E; gg
2eBa00
h
11:25a
1 2
n 12 k0 2eB
h n 2
1
11.2
415

m EFBHD ; gg
h2 0
U EFBHD ; n; gg
2 8
11:25b

n0
nmax

eBgv X
Y35HD EFBHD ; n; gg Z35HD EFBHD ; n; gg
2
2p h n0
11:26a
hq qi
U8 EFBHD ; n; gg U8 EFBHD ; n; gg and
where Y35HD EFBHD ; n; gg
s0

P
LB rY35 HD EFBHD ; n; gg
Z35 HD EFBHD ; n; gg
r1

JB
nmax
a0 e2 gv BkB T X
F0 g7A
2
2p2 h
n0
11:26b
where
where E27 is the Landau sub-band energy which can be obtained from (11.25a) by

The electron energy spectrum in IV-VI semiconductors are dened by the models
of Cohen, Lax, Dimmock and Bangert and Kastner respectively. The Magneto EP
in HD IV-VI semiconductors is discussed in accordance with the said model for the
purpose of relative comparison.
(a)
Cohen Model
In accordance with the Cohen model, the dispersion law of the carriers in IV-VI
semiconductors is given by
E1 aE
aEp2y p2y 1 aE
ap4y
p2
p2x
z
2m2
2m1 2m3 2m02
4m2 m02
11:27
416
where p1 hki , i x; y; z, m1 ; m2 , and m3 are the effective carrier masses at the

band-edge along x, y and z directions respectively and m02 is the effective-mass
tensor component at the top of the valence band (for electrons) or at the bottom of
the conduction band (for holes).
The magneto electron energy spectrum in IV-VI semiconductors in the presence
of quantizing magnetic eldB along z-direction can be written as

h2 kz2
1
1
3
1 2 2
2
E1 aE n hxE g l0 B a n n h x E
2
2
8
2
2m3
11:28a
h

i1=2
ejB
m2
where xE pj
.
m1 m2 1 aE 1 m0
2
Therefore the magneto dispersion law in heavily doped IV-VI materials can be
expressed as
h2 kz2
U16; E; n; gg
2m3
11:28b
where

1 heB
1
3a
1
heB 2
U16; E; n; gg c2 E; gg n p g l0 B n2 n p
m1 m2
2 m1 m2 2
8
2

a
1 heB
m2
c3 E; gg n p 1 0
m2
2
2 m1 m2
2
3a8 n2 n 12
2
eB
ph
m1 m2

2
1m
0
m
2
The EEM at the Fermi Level can be written from (11.28b) as

0
EFBHD ; n; gg
m EFBHD ; n; gg m3 U16;
11:28c
The carrier statistics under the condition of extreme degeneracy in this case can
be expressed as
n0
nmax
1
gv eB p X
m
U16; EFBHD ; n; gg 2
3
2
p2 h
n0
11:29a
11.2
417

JB
nmax
a0 e2 gv BkB T X
F0 g8A
2p2 h2
n0
11:29b
where
where EL8 is the Landau sub-band energy which can be obtained from (11.28b) by
substituting kz = 0 and E = EL8
(b) Lax Model
In accordance with this model, the magneto dispersion relation assumes the form
h2 kz2 1
1
l g B
E1 aE n hx03 E
2
2m3 2 0
11:30
eB
where x03 E p
m1 m2
The magneto dispersion relation in heavily doped IV-VI materials, can be

h2 kz2 1
1
g l0 B
c2 E; gg n hx03 E
2
2m3 2
11:31
(11.31) can be written as

h2 kz2
U17; E; n; gg
2m3
11:32a
where
1
1
U17; E; n; gg c2 E; gg n hx03 E g l0 B
2
2
0
EFBHD ; n; gg
m EFBHD ; gg m3 U17;
11:32b
418
The electron concentration under the condition of extreme degeneracy can be

written as
n0
nmax
1
gv eB p X
m
3
2
2
p h
n0
11:33a

JB
nmax
a0 e2 gv BkB T X
F0 g9A
2p2 h2
n0
11:33b
where
(c)
Dimmock Model
The dispersion relation under magnetic quantization in HD IV-VI semiconductors can be expressed in accordance with Dimmock model as

2eB
1 h 1
1
h2 1
1
ac

E;
g
x

n
3
g
2 m
h
2 2 m
m
m
t
t
l
l

2 2
2 2
4 2 2
4 2 2
4 2
2 2
2 2
4 4
h kz h ks h kz
h ks kz
h kz ks
h kz
h ks

h ks
a
m 4m m 4m m
2mt
2ml
2mt
2ml
4m
m
4m
t
t
t
l
l
l
l
l

2eB
1 h2 1
1
h2 1
1
x

n
2 ml m
h
2 2 mt m
t
l
"
#
4

h4

2eB
1 2
h eB
h4 eB
1
h4
2
a
n x
n x
h
h
2
2
4m
4ml ml
2m
2mt ml h
t mt
l mt
c2 E; gg ac3 E; gg
11:33c
where x kz2
Therefore the magneto dispersion relation in heavily doped IV-VI materials,
whose unperturbed carriers obey the Dimmock Model can be expressed as
kz2 U17 E; n; gg
11:34
11.2
419
where
h

1 i
U17 E; n; gg 2p9 1 q9 E; n; gg q29 E; n; gg 4p9 R9 E; n; gg 2
11:35
ah4
; q9 E; n; gg
4m
l ml
h2 1

1
ah3 eB
1
1
1
1
1
n ac3 E; gg

2
2 mt ml
ml
2 ml ml
ml mt
ml
p9
and
1
1
1
R9 E, n; gg c2 E, gg aeBc3 E, gg n h
2 mt
mt
1 1
1
ah2
1
heB(n eB(n 2
2 mt mt
2
mt mt
11:36a
The EEM at the Fermi Level can be written from (11.34) as

m EFBHD ; n; gg
h2 0
U EFBHD ; n; gg
2 17
11:36b
written as
n0
nmax
1
gv eB X
U17 EFBHD ; n; gg 2
2
p h n0
11:37a

JB
nmax
a0 e2 gv BkB T X
F0 g10A
2p2 h2
n0
11:37b
where
where EL10 is the Landau sub-band energy which can be obtained from (11.34) by
420
(d) Model of Bangert and Kastner

In accordence with this model [73], the carrier energy spectrum in HD IV-VI
semiconductors can be written following (3.68) as
ks2
2
q11 E; gg
ky2
2
q12 E; gg
11:38
where
1
1
q11 E; gg q ; q12 E; gg q ;
S1 E; gg
S2 E; gg
2

1 R

S1 E; gg 2c0 E; gg
c1 a1 ; E; Eg iD1 a1 ; E; Eg
Eg
2

S
0 c2 a2 ; E; Eg iD2 a2 ; E; Eg
Dc

Q
00 c3 a3 ; E; Eg iD3 a3 ; E; Eg
Dc
and
2

1 2A

S2 E; gg 2c0 E; gg
c1 a1 ; E; gg iD1 a1 ; E; gg
Eg
2

S Q
c3 a3 ; E; gg iD3 a3 ; E; gg
00
Dc
Since S1 E; gg and S2 E; gg are complex, the energy spectrum is also complex
in the presence of Gaussian band tails.
Therefore the magneto dispersion law in the presence of a quantizing magnetic
eld B which makes an angle h with kz axis can be written as
kz2 U18 E; n; gg
11:39a
where

U18 E; n; gg q211 E; gg sin2 h q212 E; gg cos2 h

1 2
2eB
1 h
n q211 E; gg q12 E; gg

q11 E; gg sin2 h
h
2

3
q212 E; gg cos2 h g2
11.2
421

m EFBHD ; n; gg
h2
Real part of U18 EFBHD ; n; gg 0
2
11:39b
scattering potential and the orientation of the applied quantizing magnetic eld.
written as
n0
nmax
X
egv B
Real
part
of
U18 EFBHD ; n; gg 1=2
p2 h
n0
11:40a

JB
nmax
X
a0 e2 gv BkB T
Real
part
of
F0 g11A
2p2 h2
n0
11:40b
where
(11.39a) by substituting kz = 0 and E = EL11
(e)
Model of Foley and Langenberg
The dispersion relation of the conduction electrons of IV-VI semiconductors in

accordance with Foley et al. can be written as [74]
E
1
Eg
Eg
E k E k 2 P2? ks2 P2k kz2 2
2
2
h2 k 2
h2 k 2
h2 k2
h2 k 2
11:41
where E k 2ms 2mz ; E k 2ms 2mz represents the contribution from the
interaction of the conduction and the valence band edge states with the more distant
bands and the free electrons term, m1 12 m1tc m1tv ; m1 12 m1lc m1lv
?
Following the methods as given in Chap. 1, the dispersion relation in heavily

doped IV-VI materials in the present case is given by
"
##2 "
#2
" 2 2
Eg20
Eg0
h ks h2 kz2
h2 ks2 h2 kz2
c3 E; gg

2
2m
2m
4
2m
2m
?
?
k
k
11:42
"
#
2
h2 ks2 h kz2

2 2
2 2
Eg0
Pk kz P? ks
2m
2mk
?
422
Therefore the magneto-dispersion relation in heavily doped IV-VI materials can

be written as
c23 E; gg
Eg2
heBn 12 h2 x
heB
1
h2 x
Eg

Eg c3 E; gg n 2 2c3 E; gg
m?
2
2mk
2mk
4
2
m
?
heBn 12 h2 x 2
heB
1
h2 x
2eB
1
n
Eg n P2k x P2?
2
h

2
m?
2mk
m?
2mk
11:43
where kz2 x:
Therefore the magneto dispersion relation in IV-VI heavily doped materials,
where unperturbed carriers follow the model of Foley et al. can be expressed as
kz2 U19 E; n; gg
11:44a
where

1
U19 E; n; gg 2p91 1 q91 E; n; gg q291 E; n; gg 4p91 R91 E; n; gg 2
p91
4
h
1
1
2 2 ; q91 E; n; gg
4
m
m
k
k
3 eB
h
1
h3 Eg h2 eBn 12 h2
Eg
2
p
n
c3 E; gg
k

m
2
m
2
m
m
m
2m
? k
? k
k
k
2heB
Eg
1
c3 E; gg n

m?
2
2
heB
1
2eB
1
Eg n P2?
n
2
h
2
m?
R91 E; gg ; n c23 E; gg Eg c3 E; gg

m EFBHD ; n; gg
h2 0
U EFBHD ; n; gg
2 19
11:44b
Thus, as noted already in this case also the EEM is a function of Fermi energy,
Landau quantum number and the scattering potential.
written as
n0
nmax
1
gv eB X
U19 EFBHD ; n; gg 2
p2 h n0
11:45a
11.2
423

JB
nmax
a0 e2 gv BkB T X
F0 g12A
2p2 h2
n0
11:45b
where
11.2.5 The EP from HD Stressed Kane Type Semiconductors

The dispersion relation of the conduction electrons in heavily doped Kane type
semiconductors can be written following (1.206) of Chap. 1 as
ky2
kz2
kx2
1
a2k E, gg b2k E, gg c2k E, gg
where
1
1
1
ak E,gg q ; bk E, gg q and ck E, gg q
Pk E, gg
Qk E, gg
Sk E, gg
11:46
The electron energy spectrum in heavily doped Kane type semiconductors in the
presence of an arbitrarily oriented quantizing magnetic eld B which makes an
and c with kx ; ky and kz axes respectively, can be written as
angle
a1 ; b
1
1
kz0 2 U41 E, n; gg
11:47a
where U41 E, n; gg I2 E,gg 1 I3 E,n; gg

c11 E, g 2 cos2 c
I2 E, gg a11 E, gg 2 cos2 a1 b11 E, gg 2 cos2 b
1
g
1
424
and
I3 E, n; gg
2eB
1
n a11 E, gg b11 E, gg c11 E, gg 1 I2 E, gg 1=2
h
2

m EFBHD ; n; gg
h2 0
U EFBHD ; n; gg
2 41
11:47b
From (11.47b) we observe that the EEM is a function of Fermi energy, Landau
quantum number, the scattering potential and the orientation of the applied quantizing magnetic eld.
written as
n0
nmax
1
gv eB X
U41 EFBHD ; n; gg 2
2
p h n0
11:48a

JB
nmax
a0 e2 gv BkB T X
F0 g13A
2p2 h2
n0
11:48b
where
11.2.6 The EP from HD Tellurium Under Magnetic

Quantization
The magneto dispersion relation of the conduction electrons in HD Te can be
expressed following (1.231) of Chap. 1 as
kz2 U42 E; n; gg
11:49a
11.2
425
where
U42; E, n; gg 2W21 1 f2c3 E, gg W1 W23 4W1 W2
fW43 4W1 W23 c3 E, gg
8eB
1
n W21 W24 W1 W2 W23 g1=2
h
2
eB
1
n g
h
2

m EFBHD ; n; gg
h2 0
U EFBHD ; n; gg
2 42
11:49b
Thus from (11.49b) we note that the EEM is a function of three variables namely
Fermi energy, Landau quantum number and the scattering potential.
written as
n0
nmax
1
gv eB X
2
2p h n0
11:49c

JB
nmax
a0 e2 gv BkB T X
F0 g14A
2p2 h2
n0
11:49d
where
11.2.7 The EP from HD Gallium Phosphide Under Magnetic

Quantization
The magneto dispersion relation in HD GaP can be written following (1.248) of
Chap. 1 as
kz2 U43 E,n; gg
11:50a
426
where
eB
1
n g
h

2
8eB
1
2
2 2
n 2ab2 D 4c3 E, gg b2 a
fc 4bcc3 E, gg 4D b 4cDb
h

2
abc 2b2 ac3 E, gg b2 cg1=2
U43 E; n; gg 2b2 1 f2c3 E,gg b c 2Db 4ab
The EEM at the Fermi Level can be expressed from (11.50a) as

m EFBHD ; n; gg
h2 0
U EFBHD ; n; gg
2 43
11:50b
Thus, from (11.50b) it appears that the EEM is the function of Fermi energy,
written as
n0
nmax
1
gv eB X
U43 EFBHD ; n; gg 2
p2 h n0
11:50c

JB
nmax
a0 e2 gv BkB T X
F0 g15A
2
2p2 h
n0
11:50d
where
11.2.8 The EP from HD Platinum Antimonide

The magneto dispersion relation in HD PtSb2 can be written following (1.270) as
kz2 U44 E; n; gg
11:51a
11.2
427
where
q
1
2 E, n; n 4T T E, n; n ;
T71 E, n; ng T71
g
41 71
g
2T41
2eB
1
n and T72 E, n; ng
T71 E, n; ng T51 E, ng T31
h
2
2eB
1
n T21 E, ng
T61 E, ng
h
2
U44 E,n; ng

m EFBHD ; n; gg
h2 0
U EFBHD ; n; gg
2 44
11:51b
Thus, from the above equation we infer that the EEM is a function of Landau
quantum number, the Fermi energy and the scattering potential.
written as
n0
nmax
1
gv eB X
U44 EFBHD ; n; gg 2
p2 h n0
11:52a

JB
nmax
a0 e2 gv BkB T X
F0 g16A
2p2 h2
n0
11:52b
where g16A kB T1 EFHBD EL16 W ht

where EL16 is the Landau sub-band energy which can be obtained from (11.51a)
by substituting kz = 0 and E = EL16.
11.2.9 The EP from HD Bismuth Telluride Under Magnetic

Quantization
The magneto dispersion relation in HD Bi2Te3 can be written following (1.285) as
kx2 U45 E; gg ; n
11:53a
428
where
U45 E; gg ; n
ehB
c2 E; gg n 12 M
m0
31
and M31
2 1
1
x
a22 a33 a234 2

m EFBHD ; gg
h2 0
U EFBHD ; n; gg
2 45
11:53b

written as
n0
nmax
1
gv eB X
U44 EFBHD ; n; gg 2
2
p h n0
11:54a

JB
nmax
a0 e2 gv BkB T X
F0 g17A
2p2 h2
n0
11:54b
where
11.2.10 The EP from HD Germanium Under Magnetic

Quantization
The magneto dispersion relation in HD Ge can be written following (1.300) as
kx2 U46 E; gg ; n
11:55a
where
U46 E; n; gg
2mk
h2
c3 E; gg
2
Ego
Ego
Ego h2 2eB
1
n 1=2

2
2
4
m? h
11.2
429

m EFBHD ; n; gg
h2 0
U EFBHD ; n; gg
2 46
11:55b
From (11.55b) it appears that the EEM is a function of Fermi energy and Landau
quantum number due to band non-parabolicity.
written as
n0
nmax
1
gv eB X
U46 EFBHD ; n; gg 2
p2 h n0
11:56a

JB
nmax
a0 e2 gv BkB T X
F0 g18A
2p2 h2
n0
11:56b
where g18A kB T1 EFHBD EL18 W htwhere EL18 is the Landau subband energy which can be obtained from (11.55a) by substituting kz = 0 and
E = EL18
(b) Model of Wang and Ressler
The magneto dispersion relation in HD Ge can be written following (1.321) as
k22 U47 E; n; gg
11:57a
where

U47 E; n; gg
mk
h2 a6
eB
and
m?
1
1 a5 n hx? fh7 n 4a6 c3 E; gg g1=2 ; x?
2
1
1
1
h7 n 1 a5 2 fn hx? g2 2a5 n hx? 4a6 n hx?
2
2
2
1
2
4
a6 a4 4a6 c3 fn hx? g
2
m EFBHD ; n; gg
h2 0
U EFBHD ; n; gg
2 47
11:57b
430
From (11.57b) we note that the mass is a function of Fermi energy and quantum
number due to band non-parabolicity.
written as
n0
nmax
1
gv eB X
U47 EFBHD ; n; gg 2
2
p h n0
11:58a

JB
nmax
a0 e2 gv BkB T X
F0 g19A
2p2 h2
n0
11:58b
where
11.2.11 The EP from HD Gallium Antimonide Under

Magnetic Quantization
The magneto dispersion relation in HD GaSb can be written following (1.338) as
kz2 U48 E; n; gg
11:59a
where
0 2
a E
2eB
1
0 10 g0 g
n 2a29 1 f2a9 c23 E; gg a9 E
U48 E; n; gg
g0
h
2
4
2 0 4
0 3
a E
a a E
0 2 10 g0 a9 a10 c3 E; gg E
0 2 9 10 g0 g1=2 ;
fa29 E
g0
g0
16
2
h

h 1
1
a9
and a10 0
2m0
Eg0 mc m0
11.2
431

m EFBHD ; gg
h2 0
U EFBHD ; n; gg
2 48
11:59b
The electron concentration under extreme degeneracy can be written as

n0
nmax
1
gv eB X
U48 EFBHD ; n; gg 2
p2 h n0
11:60a

JB
nmax
a0 e2 gv BkB T X
F0 g20A
2p2 h2
n0
11:60b
where
11.2.12 The EP from HD II-V Semiconductors

The dispersion relation of the holes are given by [7577]
1
E h1 kx2 h2 ky2 h3 kz2 d4 kx fh5 kx2 h6 ky2 h7 kz2 d5 kx g2 G23 ky2 D23 2
D3
11:61
where kx ; ky and kz are expressed in the units of 1010 m1,
1
1
1
1
h1 a1 b1 ; h2 a2 b2 ; h3 a3 b3 ; d4 A B;
2
2
2
2
1
1
1
1
h5 a1 b1 ; h6 a2 b2 ; h7 a3 b3 ; d5 A B;
2
2
2
2
ai i 1; 2; 3; 4; bi ; A; B; G3 and D3 are system constants
432
The hole energy spectrum in HD II-V semiconductors can be expressed following the method of Chap. 1 as
c3 E,gg h1 kx2 h2 ky2 h3 kz2 d4 kx fh5 kx2 h6 ky2 h7 kz2 h5 kx g2 G23 ky2
1
D23 2 D3
11:62
the magneto dispersion law in HD II-V semiconductors assumes the form
ky2 U49; E; n; gg
11:63a
where
1
U49; E; n; gg I35 c3 E; gg I36; n c23 E; gg c3 E; gg I38; n I39; n2 ;

I35
h2
I33; n
; I36; n
; I38; n 4h25 1 4h2 I33; n 8h22 I31; n h25 I31; n;
2h22 h25
h22 h25
2
I39; n 4h25 1 I33;
n 4h32 I34; n 4h35 I34; n; I33; n G23 2h5 I32 n 2h2 I31; n;
1
d2
1
d2
2
I34; n I32;
n D23 I31; n; I31; n n hx31 4 D3 ; I32 n n
hx32 5 ;
4h1
4h5
2
2
eB
eB
h2
h2

h2

h2

x31 p ; x32 p ; M31
; M32
; M33
and M34
:
2h1
2h3
2h5
2h7
M31 M32
M33 M34

m EFBHD ; n; gg
h2 0
U EFBHD ; n; gg
2 49;
11:63b
From (11.63b) we note that the EEM is a function of Fermi energy, Landau
quantum number and the scattering potential.
n0
nmax
1
gv eB X
2
2p h n0
11:64a

JB
nmax
a0 e2 gv BkB T X
F0 g21A
2p2 h2
n0
11:64b
where
11.2
433
11.2.13 The EP from HD Lead Germanium Telluride

The dispersion relation of the carriers in n-type Pb1xGaxTe with x = 0.01 can be
written following Vassilev [78] as

g 0:411ks2 0:0377kz2 0:23ks2 0:02kz2

E 0:606ks2 0:0722kz2 E E

g 0:061ks2 0:0066kz2 ks
0:06E
11:65
g 0:21 eV is the energy gap for the transition point, the zero of the
where E
energy E is at the edge of the conduction band of the C point of the Brillouin zone
and is measured positively upwards, kx, ky and kz are in the units of 109 m1.
The magneto dispersion law in HD Pb1xGexTe can be expressed following the
methods as given in Chap. 1 as
"
#

2h0 E; gg
eB
1
0:46eB
1
n 0:02x
c3 E; gg Ego 0:345x 0:390 n
1 Erf E=gg
h

2
h

2

12
eB
1
2eB
1
n
0:06Ego 0:122 n 0:0066x
h

2
h

2

0:822eB
1
1:212eB
1
n 0:377x
n 0:722x
Eg o
h

2
h

2
11:66
The (11.66) assumes the form
kz2 U50; E; n; gg
11:67a
where
1 i
U50; E; n; gg 2p10 1 q10 E; n; gg q210 E; n; gg 4p10 R10; E; n; gg 2
p10 0:377 0:722; q10 E; n; gg 0:02 0:345c3 E; gg 0:0066
0:377
2eB
1 1
n 2
h

2
1:212eB
1
go 0:822 eB n 1
n 0:722E
h
2
h

2
and
2h0 E; gg
go 0:390 eB n 1 0:06E
go 0:122 eB n 1
c3 E; gg E
1 Eof E=gg
h
2
h
2
2eB
1 12
eB
1
1:212eB
1
0:46eB
1
go 0:822 n
n E
n
n :
h
2
h

2
h

2
h
2
R10; E; n; gg
434

m EFBHD ; gg
h2 0
U EFBHD ; n; gg
2 50;
11:67b
Thus from (11.67b) we note that the EEM is a function of the Fermi energy,
n0
nmax
1
gv eB X
2p2 h n0
11:68a

JB
nmax
a0 e2 gv BkB T X
F0 g22A
2p2 h2
n0
11:68b
where

(R:11:1)
(R:11:2)
(R:11:3)
(R:11:4)
Investigate the EP in the presence of an arbitrarily oriented quantizing

magnetic eld for all the materials as given in problems in R.1.1 of
Chap. 1 in the presence of the Gaussian type band tails.
magnetic eld in HD nonlinear optical semiconductors by including
broadening and the electron spin. Study all the special cases for HD
III-V, ternary and quaternary materials in this context.
Investigate the EPs for HD IV-VI, II-VI and stressed Kane type
compounds in the presence of an arbitrarily oriented quantizing magnetic eld by including broadening and electron spin.
Investigate the EP for all the materials as stated in R.1.1 of Chap. 1 in
the presence of an arbitrarily oriented quantizing magnetic eld by
including broadening and electron spin under the condition of heavily
doping.
11.3
Open Research Problems
(R:11:5)
(R:11:6)
(R:11:7)
(R:11:8)
(R:11:9)
(R:11:10)
(R:11:11)
(R:11:12)
(R:11:13)
(R:11:14)
(R:11:15)
(R:11:16)
(R:11:17)
(R:11:18)
435

magnetic eld and crossed electric elds in HD nonlinear optical
semiconductors by including broadening and the electron spin. Study
all the special cases for HD III-V, ternary and quaternary materials in
this context.
Investigate the EPs for HD IV-VI, II-VI and stressed Kane type
compounds in the presence of an arbitrarily oriented quantizing magnetic eld and crossed electric eld by including broadening and
electron spin.
Investigate the EP for all the materials as stated in R.1.1 of Chap. 1 in
the presence of an arbitrarily oriented quantizing magnetic eld and
crossed electric eld by including broadening and electron spin under
the condition of heavy doping.
Investigate the 2D EP in QWs of HD nonlinear optical, III-V, II-VI,
IV-VI and stressed Kane type semiconductors.
Investigate the 2D EP for HD QWs of all the materials as considered in
problems R.1.1.
Investigate the 2D EP in the presence of an arbitrarily oriented nonquantizing magnetic eld for the QWs of HD nonlinear optical semiconductors by including the electron spin. Study all the special cases
for III-V, ternary and quaternary materials in this context.
Investigate the EPs in QWs of HD IV-VI, II-VI and stressed Kane type
compounds in the presence of an arbitrarily oriented non-quantizing
magnetic eld by including the electron spin.
Investigate the 2D EP for HD QWs of all the materials as stated in
R.1.1 of Chap. 1 in the presence of an arbitrarily oriented magnetic
eld by including electron spin and broadening.
Investigate the EP for all the problems of R.1.1 under an additional
arbitrarily oriented electric eld in the presence of heavy doping.
Investigate the EP for all the problems of R.1.1 under the arbitrarily
oriented crossed electric and magnetic elds in the presence of heavy
doping.
Investigate the 2D EP for all the problems in R.1.1 the presence of
nite potential well under the conditions of formation of band tails and
applied external parallel magnetic eld.
parabolic potential well under the conditions of formation of band tails
and applied external parallel magnetic eld.
circular potential well under the conditions of formation of band tails
Investigate the 2D EP for accumulation layers of HD nonlinear optical,
III-V, IV-VI, II-VI and stressed Kane type semiconductors in the
presence of an arbitrary electric quantization.
436
(R:11:19)
(R:11:20)
(R:11:21)
(R:11:22)
(R:11:23)
(R:11:24)
(R:11:25)
(R:11:26)
(R:11:27)
(R:11:28)
(R:11:29)
(R:11:30)
(R:11:31)
(R:11:32)
Investigate the 2D EP in accumulation layers of all the materials as

stated in R.1.1 of Chap. 1 under the condition of heavy doping and in
the presence of electric quantization along arbitrary direction.
Investigate the 2D EP in the presence of an arbitrarily oriented electric
quantization for accumulation layers of HD nonlinear optical semiconductors. Study all the special cases for III-V, ternary and quaternary
materials in this context.
Investigate the 2D EPs in accumulation layers of HD IV-VI, II-VI and
stressed Kane type compounds in the presence of an arbitrarily oriented
electric quantization.
stated in R.1.1 of Chap. 1 in the presence of an arbitrarily oriented
quantizing electric eld under the conditions of formation of band tails
Investigate the 2D EP in the presence of an arbitrarily oriented magnetic eld in accumulation layers of HD nonlinear optical semiconductors by including the electron spin. Study all the special cases for
HD III-V, ternary and quaternary materials in this context.
Investigate the 2D EPs in accumulation layers of HD IV-VI, II-VI and
non-quantizing magnetic eld by including the electron spin.
stated in R.1.1 of Chap. 1 in the presence of an arbitrarily oriented nonquantizing magnetic eld by including electron spin and heavy doping.
Investigate the 2D EP in accumulation layers for all the problems from
R.11.22 to R.11.26 in the presence of an additional arbitrarily oriented
electric eld.
R.11.22 to R.11.26 in the presence of arbitrarily oriented crossed
electric and magnetic elds.
R.11.22 to R.11.26 in the presence of surface states.
R.11.22 to R.11.26 in the presence of hot electron effects.
R.11.22 to R.11.26 by including the occupancy of the electrons in
various electric subbands.
Investigate the 2D EP in Doping superlattices of HD nonlinear optical,
III-V, II-VI, IV-VI and stressed Kane type materials.
Investigate the 2D EP in Doping superlattices of all types of materials
as discussed in problem R.1.1 as given in Chap. 1 under the conditions
of formation of band tails and applied external parallel magnetic eld.
11.3
(R:11:33)
(R:11:34)
(R:11:35)
(R:11:36)
(R:11:37)
(R:11:38)
(R:11:39)
(R:11:40)
(R:11:41)
(R:11:42)
(R:11:43)
437
Investigate the 2D EP in the presence of an arbitrarily oriented nonquantizing magnetic eld for Doping superlattices of HD nonlinear
optical semiconductors by including the electron spin. Study all the
special cases for HD III-V, ternary and quaternary materials in this
context.
Investigate the 2D EPs in Doping superlattices of HD IV-VI, II-VI and
non-quantizing magnetic eld by including the electron spin.
Investigate the 2D EP for Doping superlattices of all the materials as
stated in R.1.1 of Chap. 1 in the presence of an arbitrarily oriented nonquantizing magnetic eld by including electron spin under the conditions of formation of band tails and applied external parallel magnetic
eld.
Investigate the 2D EP for all the problems from R.11.32 to R.11.35 in
the presence of an additional arbitrarily oriented non-quantizing electric
eld.
Investigate the 2D EP for all the problems from R.11.32 to R.11.35 in
the presence of arbitrarily oriented crossed electric and magnetic elds.
Investigate all the problems from R.11.1 to R.11.37, in the presence of
arbitrarily oriented light waves and magnetic quantization.
Investigate all the problems from R.11.1 up to R.11.37 in the presence of
exponential, Kane, Halperin and Lax and Bonch-Bruevich band tails
[79].
Investigate all the problems of this chapter by removing all the mathematical approximations and establishing the uniqueness conditions in
each case.
(a) Investigate the EP in all the bulk semiconductors as considered in
this appendix in the presence of defects and magnetic
quantization.
(b) Investigate the EP as dened in (R.11.2.1) in the presence of an
arbitrarily oriented quantizing magnetic eld including broadening and the electron spin (applicable under magnetic quantization)
for all the bulk semiconductors whose unperturbed carrier energy
spectra are dened in Chap. 1.
(R.11.42) Investigate the EP as dened in (R.11.2.1) in the presence of
quantizing magnetic eld under an arbitrarily oriented (a) non-uniform
electric eld and (b) alternating electric eld respectively for all the
semiconductors whose unperturbed carrier energy spectra are dened
in Chap. 1 by including spin and broadening respectively.
Investigate the EP as dened in (R.11.2.1) under an arbitrarily oriented
alternating quantizing magnetic eld by including broadening and the
electron spin for all the semiconductors whose unperturbed carrier
energy spectra as dened in Chap. 1.
438
(R:11:44)
(R:11:45)
(R:11:46)
(R:11:47)
(R:11:48)
(R:11:49)
(R:11:50)
(R:11:51)
(R:11:52)

alternating quantizing magnetic eld and crossed alternating electric
eld by including broadening and the electron spin for all the semiconductors whose unperturbed carrier energy spectra as dened in
Chap. 1.
alternating quantizing magnetic eld and crossed alternating non-uniform electric eld by including broadening and the electron spin whose
for all the semiconductors unperturbed carrier energy spectra as dened
in Chap. 1.
Investigate the EP as dened in (R.11.2.1) in the presence and absence
of an arbitrarily oriented alternating quantizing magnetic eld under
exponential, Kane, Halperin, Lax and Bonch-Bruevich band tails [69]
for all the semiconductors whose unperturbed carrier energy spectra as
dened in Chap. 1 by including spin and broadening (applicable under
magnetic quantization).
Investigate the EP as dened in (R.11.2.1) in the presence of an
arbitrarily oriented quantizing magnetic eld for all the semiconductors
as dened in (R.11.2.6) under an arbitrarily oriented (a) non-uniform
electric eld and (b) alternating electric eld respectively whose
unperturbed carrier energy spectra as dened in Chap. 1.
alternating quantizing magnetic eld by including broadening and the
electron spin for all semiconductors whose unperturbed carrier energy
spectra as dened in Chap. 1.
alternating quantizing magnetic eld and crossed alternating electric
eld by including broadening and the electron spin for all the semiconductors whose unperturbed carrier energy spectra as dened in
Chap. 1.
Investigate all the appropriate problems of this section under magnetic
quantization after proper modications introducing new theoretical
formalisms for functional, negative refractive index, macro molecular,
organic and magnetic materials.
Investigate all the appropriate problems of this section for HD p-InSb,
p-CuCl and stressed semiconductors under magnetic quantization
having diamond structure valence bands whose dispersion relations of
the carriers in bulk semiconductors are given by Cunningham [79],
Yekimov et al. [80] and Roman [81] respectively.
Investigate all the problems of this section by removing all the mathematical approximations and establishing the respective appropriate
References
439
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Chapter 12
Appendix B: The EP from Super-Lattices

of HD Semiconductors Under Magnetic
Quantization
12.1 Introduction
In this chapter, we shall study the EP under magnetic quantization in III-V, II-VI,
IV-VI, HgTe/CdTe and strained layer, HDSLs with graded interfaces in
Sects. 12.2.112.2.5 respectively. From Sects. 12.2.6 to 12.2.10, we shall investigate the same DMR in III-V, II-VI, IV-VI, HgTe/CdTe and strained layer, HD
effective mass SLs. The last Sect. 12.2.3 contains open research problems.

12.2.1 The EP from HD III-V Superlattices with Graded
Interfaces Under Magnetic Quantization
JB
nmax
X
a0 e2 gv BkB T
Real
part
of
F0 g1SLHD
2p2 h2
n0
12:1
where
g1SLHD kB T1 EF1 ESL1 W ht
where ESL1 is the complex Landau sub-band energy which can be obtained from
(4.3) by substituting kz = 0 and E = ESL1 is the Fermi energy in this case.
It appears that the evaluation of EP in this case requires an expression of the
electron concentration which is given by
DOI 10.1007/978-3-319-11188-9_12
441
442
12
Appendix B: The EP from Super-Lattices of HD Semiconductors
n0
nmax
gv eB X
/ EF1 ; n /2C EF1 ; n
p2 h n0 1C
12:2
where
/1C EF1 ; n
/2C EF1 ; n
h
G8EF1 ;n
q. i1=2
;
G28EF1 ;n H8EF1 ;n 2
s
X

o2r
h2r;1 /1C EF1 ; n; h2r;i 2kB T 2r 1 212r f2r 2r
oEFi
r1
and i 1; 2; 3; . . .
12.2.2 The EP from HD II-VI Superlattices with Graded

JB
nmax
X
a0 e2 gv BkB T
Real
part
of
F0 g2SLHD
2p2 h2
n0
12:3
where
(4.10) by substituting kz = 0 and E = ESL2 and EF2 is the Fermi energy in this case.
The electron concentration in this case can be written as
n0
nmax
gv eB X
/ EF2 ; n /4C EF2 ; n
p2 h n0 3C
where
/3C EF2 ; n
and /4C EF2 ; n
q. i1=2
h
G19EF2 ;n G219EF2 ;n H19EF2 ;n 2
s
X
r1
h2r;2 /3C EF2 ; n
12:4
12.2
443
12.2.3 The EP from HD IV-VI Superlattices with Graded

JB
nmax
a0 e2 gv BkB T X
F0 g3SLHD
2
2p2 h
n0
12:5
where
where ESL3 is the Landau sub-band energy which can be obtained from (4.16) by
substituting kz = 0 and E = ESL3 and EF3 is the Fermi energy in this case.
n0
nmax
gv eB X
/ EF3 ; n /6C EF3 ; n
p2 h n0 5C
12:6
where
/6C EF3 ; n
s
X
h2r;3 /6C EF3 ; n
r1
12.2.4 The EP from HD HgTe/CdTe Superlattices

with Graded Interfaces Under Magnetic Quantization
JB
nmax
X
a0 e2 gv BkB T
Real
part
of
F0 g4SLHD
2
2p2 h
n0
12:7
where
444
12
n0
nmax
gv eB X
/ EF4 ; n /8C EF4 ; n
p2 h n0 7C
12:8
where
/7C EF4 ; n
and /8C EF4 ; n
h
G192EF4 ;n
s
X
q. i1=2
G2192EF4 ;n H192EF4 ;n 2
h2r;4 /7C EF4 ; n
r1
12.2.5 The EP from HD Stained Layer Superlattices

with Graded Interfaces Under Magnetic Quantization
JB
nmax
a0 e2 gv BkB T X
F0 g6SLHD
2p2 h2
n0
12:9
where
n0
nmax
gv eB X
/ EF6 ; n /10C EF6 ; n
p2 h n0 9C
where
/8C EF6 ; n
s
X
r1
h2r;6 /7C EF6 ; n
12:10
12.2
445
12.2.6 The EP from HD III-V Effective Mass Superlattices

JB
nmax
X
a0 e2 gv BkB T
Real
part
of
F0 g7SLHD
2
2p2 h
n0
12:11
where
n0
nmax
gv eB X
/ EF7 ; n /12 EF7 ; n
p2 h n0 11
12:12
where
/11 EF7 ; n
and /12 EF7 ; n

q 1=2
d7EF7 ;n d27EF7 ;n d8EF7 ;n
2
s
X
h2r;7 /11 EF7 ; n:
r1
12.2.7 The EP from HD II-VI Effective Mass Superlattices

JB
nmax
X
a0 e2 gv BkB T
Real
part
of
F0 g8SLHD
2
2p2 h
n0
12:13
where
446
12

n0
nmax
gv eB X
/ EF8 ; n /14 EF8 ; n
p2 h n0 13
12:14
where

/13 EF8 ; n
and /14 EF8 ; n
D13EF8 ;n
s
X
q. 1=2
D213EF8 ;n D14EF8 ;n
;
2
h2r;7 /13 EF8 ; n
r1
12.2.8 The EP from HD IV-VI Effective Mass Superlattices

JB
nmax
a0 e2 gv BkB T X
F0 g9SLHD
2p2 h2
n0
12:15
where
n0
nmax
gv eB X
/ EF9 ; n /16 EF9 ; n
p2 h n0 15
where
/16 EF9 ; n
s
X
r1
h2r;6 /15 EF9 ; n
12:16
12.2
447
12.2.9 The EP from HD HgTe/CdTe Effective Mass

Superlattices Under Magnetic Quantization
JB
nmax
X
a0 e2 gv BkB T
Real
part
of
F0 g10SLHD
2
2p2 h
n0
12:17
where
where ESL10 is the is the complex Landau sub-band energy which can be obtained
from (4.43) by substituting kz = 0 and E = ESL10 and EF10 is the Fermi energy in
this case.
n0
nmax
gv eB X
/ EF10 ; n /18 EF10 ; n
p2 h n0 17
where

/17 EF10 ; n
and /18 EF10 ; n
D13HEF10 ;n
s
X
12:18
q 1=2
D213HEF10 ;n D14HEF10 ;n
2
h2r;7 /17 EF10 ; n:
r1
12.2.10 The EP from HD Stained Layer Effective Mass

Superlattices Under Magnetic Quantization
JB
nmax
a0 e2 gv BkB T X
F0 g11SLHD
2p2 h2
n0
where
12:19
448
12
n0
nmax
gv eB X
/ EF11 ; n /20 EF11 ; n
p2 h n0 19
12:20
where
/20 EF11 ; n
s
X
h2r;6 /19 EF11 ; n:
r1

(R.12.1)
Investigate the EP for all types of HD super-lattices under alternating

magnetic eld and alternating non uniform electric eld applied
simultaneously in arbitrary directions.
Chapter 13
Appendix C: The EP from HDS and Their

Nano-structures Under Cross-Fields
Conguration
13.1 Introduction
The influence of crossed electric and quantizing magnetic elds on the transport
properties of semiconductors having various band structures are relatively less
investigated as compared with the corresponding magnetic quantization, although,
the cross-elds are fundamental with respect to the addition of new physics and the
related experimental ndings. In 1966, Zawadzki and Lax [1] formulated the
electron dispersion law for III-V semiconductors in accordance with the two band
model of Kane under cross elds conguration which generates the interest to study
this particular topic of semiconductor science in general [238].
In Sect. 13.2.1 of theoretical background, the EP in HD nonlinear optical
materials in the presence of crossed electric and quantizing magnetic elds has been
investigated by formulating the electron dispersion relation. The Sect. 13.2.2
reflects the study of the EP in HD III-V, ternary and quaternary compounds as a
special case of Sect. 13.2.1. The Sect. 13.2.3 contains the study of the EP for the
HD II-VI semiconductors in the present case. In Sect. 13.2.4, the EP under cross
eld conguration in HD IV-VI semiconductors has been investigated in accordance with the models of the Cohen, the Lax nonparabolic ellipsoidal and the
parabolic ellipsoidal respectively. In the Sect. 13.2.5, the EP for the HD stressed
Kane type semiconductors has been investigated. The Sect. 13.3 contain three open
research problems.

DOI 10.1007/978-3-319-11188-9_13
449
450

Under Cross-Fields Conguration
The (1.2) of Chap. 1 can be expressed as
T22 E; gg
p2
p2s
z T22 E; gg T21 E; gg 1

2m? 2Mjj
13:1
where, ps
hks and pz hkz
We know that from electromagnetic theory that,
~
B r~
A
13:2
where, ~
A is the vector potential. In the presence of quantizing magnetic eld
B along z direction, the (13.2) assumes the form

î
^j

o
o
0î 0^j B^k ox
oy
Ax Ay

^k

o
oz
Az
13:3
where î; ^j and ^k are orthogonal triads. Thus, we can write

oAz oAy

0
oy
oz
oAx oAz

0
oz
ox
oAy oAx

B
ox
oy
13:4
This particular set of equations is being satised for Ax 0; Ay Bx and

Az 0.
Therefore in the presence of the electric eld Eo along x axis and the quantizing
magnetic eld B along z axis for the present case following (13.1) one can
approximately write,
T22 E; gg jejEo^xqE; gg
^p2z
^p2x
^py jejB^x2
2m?
2m?
2aE; gg
13:5
13.2
451
where
o
T22 E; gg and aE; gg mjj T22 E; gg 1 T21 E; gg
oE
qE
Let us dene the operator ^h as

^h ^py jejB^x m? Eo qE; gg

B
13:6
Eliminating the operator ^x, between (13.5) and (13.6) the dispersion relation of
the conduction electron in tetragonal semiconductors in the presence of cross elds
conguration is given by
"
T22 E; gg
1
n hx01
2

hkz E2
2aE; gg

#
Eo
hky qE; gg
M? q2 E; gg Eo2

B
2B2
13:7
where,
x01
jejB
m?
13:8a
The EEMs along Z and Y directions can, respectively be expressed from (13.7) as
FBHD ; gg ; n; E0 Real part of a0 E
FBHD ; gg T22 E
FBHD ; gg n 1hx01
mz E
2
FBHD ; gg E02
M ? q 2 E
0
FBHD ; gg T22
aE
EFBHD ; gg
2B2
FBHD ; gg q0 E
FBHD ; gg E02
M? qE

13:8b
2
B
and
FBHD ; gg ; n; E0 B 2 Real part of qE
FBHD ; gg 3 T22 E
FBHD ; gg
my E
E0
FBHD ; gg E02
M ? q 2 E
1
FBHD ; gg
qE
n hx01
2
2B2
FBHD ; gg q0 E
FBHD ; gg E02
M? qE
0
T22
EFBHD ; gg

2
B
FBHD ; gg n 1hx01
T22 E
2
FBHD ; gg E02
M? q2 E
FBHD ; gg
q0 E
13:8c
2B2
452
FBHD is the Fermi energy in the presence of cross-elds conguration and

where E
heavy doping as measured from the edge of the conduction band in the vertically
upward direction in the absence of any quantization.
FBHD ; gg ; n; E0 ! 1, which is a physically justied result.
When E0 ! 0, mz E
The dependence of the EEM along y direction on the Fermi energy, electric eld,
magnetic eld and the magnetic quantum number is an intrinsic property of cross
elds together with the fact in the present case of heavy doping, the EEM exists in
the band gap. Another characteristic feature of cross eld is that various transport
coefcients will be sampled dimension dependent. These conclusions are valid for
even isotropic parabolic energy bands and cross elds introduce the index dependent anisotropy in the effective mass.
The formulation of EP requires the expression of the electron concentration
which can, in general, be written excluding the electron spin as
nmax
gv X
no
Lx p2 n0
Z1
IE; gg
0
E
ofo
dE
oE
13:9
0 is determined by the equation

where Lx is the sample length along x direction, E
0 ; gg 0
IE
where
xh E;gg
IE; gg
kz Edky
13:10
xl E;gg
in which, xl E; gg
Thus we get
E0 M? qE;gg
hB
x
and xh E; gg jejBL
h xl E; gg
IE; gg
2 q 2"

2 #32

m? E02 qE; gg
2 4B 2aE; gg 4
1 hjejB
T22 E; gg n
jejE0 Lx qE; gg
3
2 m?
2B2
h2 E0 qE; gg
3
3
"

2 #32

1 hjejB m? E02 qE; gg
55
T22 E; gg n

2 m?
2B2
13:11
13.2
453
Therefore the electron concentration is given by

p
nmax
X

2gv B 2
FBHD ; gg T42HD n; E
FBHD ; gg
T41HD n; E
Real
part
of
2
2
3Lx p
h Eo
n0

n0
13:12
where
q

2"

#3=2

FBHD ; gg
a E
FBHD ; gg 2

m E2 q E
FBHD ; gg ? 0
FBHD ; gg n 1 hjejB jejE0 Lx q E

4 T22 E
FBHD ; gg
2B2
2 M?
q E
3
"
#

3
=
2

FBHD ; gg 2

m E2 q E
5
FBHD ; gg n 1 hjejB ? 0
T22 E
2 m?
2B2

FBHD ; gg
T41 n; E
where E FBHD is the Fermi energy in this case and

s

X

FBHD ; gg
FBHD ; gg
T42HD n; E
Lr T41HD n; E
r1
The EP in DMR this case can be written as

JE0 ; B
nmax
X
a0 egv
Real
part
of
4Lx p2 h
n0
Z1
IE; gg
e00 Wht
oE of E
dE
okz oE
13:13
where e00 is the Landau sub-band energy under cross-elds conguration.

Thus using (13.12), (13.13) and the allied denitions we can study the EP in this
case.
13.2.2 The EP from HD Kane Type III-V Semiconductors

Under Cross-Fields Conguration
(a) Under the conditions d 0; Djj D? D and mk m? mc , (13.7)
assumes the form

T33 E; gg

n

1
hkz E 2
hx0
2
2mc
2

0 m c E 0
E0
hky T33 E; gg
B
where T33 E; gg T31 E; gg iT32 E; gg

0 i2
T33 E; gg
2B2
13:14a
454
The use of (13.14a) leads to the expressions of the EEMs along z and y
directions as

FBHD ; gg ; n; E0 mc Real part of T33 E
FBHD ; gg 00
mz E

FBHD ; gg 0 T33 E
FBHD ; gg 00
mc E02 T33 E

B2
13:14b

FBHD ; gg ; n; E0 B 2 Real partof T33 E
FBHD ; gg 0 1 T33 E
FBHD ; gg
my E
E0

FBHD ; gg 0 2 T33 E
FBHD ; gg 00
mc E02 T33 E
1

n hx0

T E
;g

FBHD ; gg 0 2 33 FBHD g
2
2B2
T33 E

FBHD ; gg 0 2
FBHD ; gg 00
mc E02 T33 E
mc E02 T33 E
1

n hx0
2
2B2
B2
13:14c
n1 can be written as
The Landau energy E
; g g0 2
m E2 fT E
n1 ; gg n 1hx0 c 0 33 n1 g
T33 E
2
2B2
13:15
The electron concentration in this case assumes the form

p
nmax
X

2gv B 2mc
FB ; gg T44HD n; E
FB ; gg
n0
Real
part
of
T43HD n; E
2
2
3Lx p
h E0
n0
13:16
where,

mc E02
FBHD ; gg T33 E
FB ; gg n 1
FB ; gg g0 2 jejE0 Lx fT33 E
FB ; gg g0 3=2
h x0
T43HD n; E
fT33 E
2
2B2

mc E02
1
FB ; gg n 1
FB ; gg g0 2 3=2
T33 E
h x0
fT33 E
and
2
FB ; gg g0
2
2B
fT33 E
s

X

FBHD ; gg
FBHD ; gg :
Lr T43HD n; E
T44HD n; E
r1
case.
13.2
455
(b) Under the condition D Eg , (13.14ac) assumes the form

2 hkz E 2
1
E0
mc E02 0
c
E;
g
c2 E; gg n hx0 hky c02 E; gg

g
2
2
B
2B2
2mc
13:17a
directions as
FBHD ; gg ; n; E0
mz E

FBHD ; gg 0 c2 E
FBHD ; gg 00
00 mc E02 c2 E

mc c2 EFBHD ; gg

B2
13:17b
1
1
FBHD ; gg ; n; E0 B 2

my E
; g n hx0
c E
FBHD ; gg g0 2 FBHD g
E0 fc2 E
2
00
0
2
2
FBHD ; gg g c2 E
FBHD ; gg
mc E0 fc2 E
FBHD ; gg
0 c2 E

2B2
c2 EFBHD ; gg 2
FBHD ; gg g
FBHD ; gg g
mc E02 fc2 E
mc E02 fc2 E
1
1

n hx0
2B2
B2
2
0 2
00
13:17c
The Landau energy E
n2 ; gg
c2 E

2
1
mc E02 0
n hx0
c2 En2 ; gg
2
2
2B
13:18
The expressions for n0 in this case assume the forms

p nmax

2gv B 2mc X
FBHD ; gg
n0
T47HD n; E
2
2
3Lx p h E0 n0
13:19
where

2
FBHD ; gg c2 E
FBHD ; gg n 1
FBHD ; gg mc E0 c02 E
FBHD ; gg 2 3=2
hx0 jejE0 Lx c02 E
T47HD n; E
2
2B2

mc E02 0
FBHD ; gg n 1
FBHD ; gg 1
hx0
c2 E
c2 EFBHD ; gg 2 3=2 c02 E
2
2
2B
456
and
s

X

FBHD ; gg
FBHD ; gg :
T48HD n; E
Lr T47HD n; E
r0
case.
(c) For a ! 0 and we can write,

2 hkz E 2
1
E0
mc E02 0
c3 E; gg n hx0 hky c03 E; gg
c
E;
g
g
3
2
B
2B2
2mc
13:20a
directions as
"
FBHD ; gg ; n; E0
mz E
mc
FBHD ; gg
c3 E
#
FBHD ; gg 0 c3 E
FBHD ; gg 00
00 mc E02 c3 E
B2
13:20b

2
1
FBHD ; gg ; n; E0 B h
FBHD ; gg n 1 hx0
i c3 E
my E

E0
2
FBHD ; gg 0
c3 E
h
i2
00
FBHD ; gg 0
c E
mc E02 c3 E

3 FBHD ; gg

c E
;g

FBHD ; gg 0 2 3 FBHD g
2B2
c3 E

FBHD ; gg 0 2
FBHD ; gg 00
mc E02 c3 E
mc E02 c3 E
1

n hx0
2
2B2
B2
13:20c
The Landau energy E
n3 ; gg
c3 E

n

2
1
mc E02 0
c3 En3 ; gg
hx0
2
2
2B
13:21
The expressions for n0 in this case assume the forms

n0
p nmax

2gv B 2mc X
FBHD ; gg
T
n;
E
49HD
2
3Lx p2 h E0 n0
13:22
13.2
457
where
FBHD ; gg
T49HD n; E
"

2

3=2
FBHD ; gg n 1 hx0 jejE0 Lx c03 E
FBHD ; gg mc E0 c03 E
FBHD ; gg 2
c3 E
2
2B2

#
2

3=2 0

FBHD ; gg n 1 hx0 mc E0 c03 E
FBHD ; gg 2
FBHD ; gg 1
c3 E
c3 E
2
2
2B
and
s

X

FBHD ; gg
FBHD ; gg :
T50HD n; E
Lr T49HD n; E
r0
case.
13.2.3 The EP from HD II-VI Semiconductors Under

Cross-Fields Conguration
The electron energy spectrum in HD II-VI semiconductors in the presence ofelectric
eld E0 along x direction and quantizing magnetic eld B along z direction can
approximately be written as
c3 E; gg b1 n; E0
mk E02 0
2 hkz E2
E0
hky c03 E; gg
c3 E; gg
2
B
2B
2mk
13:23a
where
"
b1 n; E0

2

2 1=2 #
1
E0 m ?
1
E0 m?
jejB
hx02
; x02 :
n hx02
D n
2
2
m?
2B2
2B2
and
D
k0
p
2m?
h
directions as
458
FBHD ; gg ; n; E0 mk fc3 E

FBHD ; gg g00
mz E
FBHD ; gg g0 fc3 E
FBHD ; gg g00
mk E02 fc3 E

B2
13:23b
1
FBHD ; gg ; n; E0 B 2

c E
my E
; g b1 n; E0
FBHD ; gg g0 3 FBHD g
E0 fc3 E
00
FBHD ; gg g0 2 fc E

mk E02 fc3 E
3 FBHD ; gg g

c E
; g b1 n; E0
0
2
FBHD ; gg g 2 3 FBHD g
2B
fc3 E
FBHD ; gg g0 2
mk E02 fc3 E
2B2
1
FBHD ; gg g00
mk E02 fc3 E
B2
13:23c
The Landau energy E
n4 ; gg b1 n; E0
c3 E
mk E02
2B2
n4 ; gg
c03 E
13:24
The expression for n0 in this case assumes the form

q
nmax
2gv B 2mk X

FBHD ; gg
n0
T53HD n; E
2
2
3Lx p h E0 n0
13:25
where
2"
#3=2

m E 2

FBHD ; gg b1 n; E0 jejE0 Lx c03 E
FBHD ; gg k 0 c03 E
FBHD ; gg 2
T53HD n; EFBHD ; gg 4 c3 E
2B2
3
"
#
3=2
m E 2

1
5 c0 E
FBHD ; gg b1 n; E0 k 0 c03 E
FBHD ; gg 2

c3 E
3 FBHD ; gg
2B2
and
s

X

FBHD ; gg
FBHD ; gg :
T54HD n; E
Lr T53HD n; E
r0
case.
13.2
459
13.2.4 The EP from HD IV-VI Semiconductors Under

p2s

2M1 E; gg
p2z

2M3 E; gg
gE; gg
13:26a
where
M1 E; gg
R2
fc1 a1 ; E; Eg iD1 a1 ; E; Eg g
Eg
S2
D0c
Q2
fc3 a3 ; E; Eg iD3 a3 ; E; Eg g1
D00c
M3 E; gg
2A2
Eg
S Q2
fc3 a3 ; E; Eg iD3 a3 ; E; Eg g1
D00c
and
g E; gg 2h2 c0 E; gg
In the presence of quantizing magnetic eld B along z direction and the electric
eld along x-axis, from above equation one obtains
^p2z
^
^py jejB^x2
p2x
g E; gg jejE0^xq1 E; gg
2M1 E; gg
2M1 E; gg
2M3 E; gg
13:26b
o
where q1 E; gg oE
g E; gg
Let us dene the operator h^ as

q
E;
g
E
M
E;
g
0
g
g
1
1
^h ^py jejB^x
B
13:27
460
Eliminating ^x, between the above two equations, the dispersion relation of the
conduction electrons in HD stressed Kane type semiconductors in the presence of
cross elds conguration can be expressed as
h2 kz2
1
E0
q1 E; gg hky
g E; gg n hxi1 E; gg

2
2M3 E; gg B
E02
2
2 q1 E; gg M1 E; gg
2B
13:28a
where xi1 E; gg eBM1 E; gg 1

directions as
FBHD ; gg ; n; E0 Real part of M3 E
FBHD ; gg 0 g E
FBHD ; gg n 1hxi1 E
FBHD ; gg
mz E
2
E2
FBHD ; gg 2 M1 E
FBHD ; gg
02 q1 E
2B
FBHD ; gg g E
FBHD ; gg 0 n 1
FBHD ; gg 0
hxi1 E
M3 E
2
E2
FBHD ; gg 2 M1 E
FBHD ; gg 0
02 q1 E
2B
FBHD ; gg q1 E
FBHD ; gg q1 E
FBHD ; gg 0
2M3 E
13:28b
and
FBHD ; gg ; n; E0 B=E0 2 Real part of q1 E
FBHD ; gg 3 g E
FBHD ; gg n 1
FBHD ; gg
my E
hxi1 E
2
2
E
FBHD ; gg 2 M1 E
FBHD ; gg q1 E
FBHD ; gg g E
FBHD ; gg 0
02 q1 E
2B
2
1
FBHD ; gg 0 E0 q1 E
FBHD ; gg 2 M1 E
FBHD ; gg 0
n hxi1 E
2
2B2
FBHD ; gg 0 g E
FBHD ; gg n 1
FBHD ; gg
hxi1 E
q1 E
2
2
E
FBHD ; gg 2 M1 E
FBHD ; gg
02 q1 E
2B
13:28c
The Landau level energy En9 in this case can be expressed through the
equation
1
E2
g En9 ; gg n hxi1 En9 ; gg 02 q1 En9 ; gg 2 M1 En9 ; gg
2
2B
13:28d
13.2
461

n0
nmax
X
2B
Real
part
of
T4131HD n; E FBHD ; gg T4141HD n; EFBHD ; gg
3Lx p2 h2 E0
n0
13:28e
where
and
q
2M3 E FBHD ; gg
T51 n; E FBHD ; gg
T4131HD n; E FBHD ; gg
q1 E FBHD ; gg
3
E0
q1 E FBHD ; gg hxhHD1 E FBHD ; gg q1 E FBHD ; gg 2
B
T51 n; E FBHD ; gg
3
E0
q1 E FBHD ; gg hxlHD1 E FBHD ; gg q1 E FBHD ; gg 2 ;
B
1
hxi1 E FBHD ; gg
T51 n; E FBHD ; gg g E FBHD ; gg n
2

2
M E FBHD ; gg E0
1
q1 E FBHD ; gg 2
2B2
M1 E FBHD ; gg E0 q1 E FBHD ; gg
;
xlHD1 E FBHD ; gg
B
jejBLx
xhHD1 E FBHD ; gg
xlHD1 E FBHD ; gg
h
s

X

FBHD ; gg
FBHD ; gg
T4141HD n; E
Lr T4131HD n; E
r1
Thus using (13.13), (13.28c) and the allied denitions we can study the EP in
this case.
13.2.5 The EP from HD Stressed Semiconductors Under

The use of (2.48) can be written as
p2y
p2z
p2x
G E; gg
2m1 E; gg 2m2 E; gg 2m3 E; gg
13:28f
462
where
m1 E; gg 2h2 c0 E; gg I1T17 1 ;

p.
b0
3
3

T17 Eg C1 e a0 C1 e b0 exx e
2 exy d0 ;
2
2
m2 E; gg 2h2 c0 E; gg I1T27 1 ;

p.
b0
3
3

T27 Eg C1 e a0 C1 e b0 exx e
d
e
2 xy 0
2
2
m3 E; gg 2h2 c0 E; gg I1T37 1 ;

b0
3
T37 Eg C1 e a0 C1 e b0 ezz e
2
2
and the other symbols are written in (1.196a).
In the presence of quantizing magneticeld B along z direction and the electric
eld along x-axis, from (13.28d) one obtains
^p2z
^
^py jejB^x2
p2x
G E; gg
2m1 E; gg
2m2 E; gg
2m3 E; gg
"
#1
m1 E; gg 2
q E; gg
jejE0^x
m2 E; gg
13:29
o
where q E; gg oE
G E; gg
Let us dene the operator ^h as

12

q
E;
g
E
m
E;
g
m
E;
g
0
g
g
g
1
2
^
h ^
py jejB^x
B
13:30
Eliminating ^x, between the above two equations, the dispersion relation of the
conduction electrons in HD stressed Kane type semiconductors in the presence of
cross elds conguration can be expressed as
m E; gg 12
h2 k2
1
E0
q E; gg 1
hky
G E; gg n hxi E; gg z
2
m2 E; gg
2m3 E; gg B
E02
q E; gg 2 m1 E; gg
2B2
13:31a
13.2
463
where
xi E; gg eBm1 E; gg m2 E; gg 2
1
directions as
FBHD ; gg ; n; E0 m3 E
FBHD ; gg 0 G E
FBHD ; gg
mz E
2
1
FBHD ; gg E0 q E
FBHD ; gg 2 m1 E
FBHD ; gg
n hxi E
2
2B2
FBHD ; gg G E
FBHD ; gg 0 n 1
FBHD ; gg 0
hxi E
m3 E
2
E2
FBHD ; gg q E
FBHD ; gg 0 m1 E
FBHD ; gg
02 2q E
2B
FBHD ; gg 0 q E
FBHD ; gg 2
m1 E
13:31b
FBHD ; gg ; n; E0 B=E0 2 m4 E
FBHD ; gg 3 G E
FBHD ; gg
my E
1
FBHD ; gg
n hxi E
2
E2
FBHD ; gg 2 m1 E
FBHD ; gg m4 E
FBHD ; gg G E
FBHD ; gg 0
02 q E
2B
2
1
FBHD ; gg 0 E0 q E
FBHD ; gg 2 m1 E
FBHD ; gg 0
n hxi E
2
2B2
FBHD ; gg 0 G E
FBHD ; gg n 1hxi E
FBHD ; gg
m4 E
2
E2
FBHD ; gg 2 m1 E
FBHD ; gg
02 q E
2B
13:31c
where
FBHD ; gg q E
FBHD ; gg
m4 E
FBHD ; gg 1
m1 E
2

FBHD ; gg
m 2 E
The Landau level energyEn8 in this case can be expressed through the equation
1
E2
G En8 ; gg n hxi En8 ; gg 02 q En8 ; gg 2 m1 En8 ; gg
2
2B
13:31d

n0
nmax
X
2B
T413HD n; E FBHD ; gg T414HD n; EFBHD ; gg
3Lx p2
h2 E0 n0
13:31e
464
where
q
2m3 E FBHD ; gg
T413HD n; E FBHD ; gg
T5 n; E FBHD ; gg
q E FBHD ; gg
3
E0
hxhHD E FBHD ; gg q E FBHD ; gg 2
q E FBHD ; gg
B
3
E0
T5 n; E FBHD ; gg q E FBHD ; gg
hxlHD E FBHD ; gg q E FBHD ; gg 2 ;
B
1
hxi E FBHD ; gg
T5 n; E FBHD ; gg G E FBHD ; gg n
2

2
m E FBHD ; gg E0
q E FBHD ; gg 2
1
2B2
m1 E FBHD ; gg E0 q E FBHD ; gg
;
xlHD E FBHD ; gg
B
jejBLx
xlHD E FBHD ; gg
xhHD E FBHD ; gg
h
and
s

X

FBHD ; gg
FBHD ; gg
T414HD n; E
Lr T413HD n; E
r1
Thus using (13.13), (13.31e) and the allied denitions we can study the EP in
this case.

R.13.1
R.13.2
R.13.3

magnetic and crossed electric elds in HD tetragonal semiconductors by
including broadening and the electron spin. Study all the special cases for
HD III-V, ternary and quaternary materials in this context.
Investigate the EPs for all models of HD IV-VI, II-VI and stressed Kane
type compounds in the presence of an arbitrarily oriented quantizing
magnetic and crossed electric elds by including broadening and electron
spin.
Investigate the EP for all the ultrathin of HD materials whose bulk
dispersion relations are stated in R.1.1 of Chap. 1 in the presence of an
arbitrarily oriented quantizing magnetic and crossed electric elds by
including broadening and electron spin.
References
465
References
1.
2.
3.
4.
5.
6.
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8.
9.
10.
11.
12.
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14.
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23.
24.
25.
26.
27.
28.
29.
30.
31.
32.
33.
34.
35.
36.
37.
38.
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S. Pahari, S. Bhattacharya, D. De, S.M. Adhikari, A. Niyogi, A. Dey, N. Paitya, S.C. Saha, K.
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Chapter 14
Appendix D: The EP from HD III-V,

Ternary and Quaternary Semiconductors
Under Strong Electric Field
14.1 Introduction
In the investigation of transport properties of nano-devices under electric eld, we
assumed that the electron energy spectrum becomes an invariant quantity, which is
not true especially in the presence of strong electric eld. In nano-devices the inbuilt electric eld is so large that the electron dispersion relation changes fundamentally and in this chapter we shall investigate the influence of intense electric
eld on the EP under various physical conditions in III-V, ternary and quaternary
materials. In Sect. 14.2.1, of theoretical background Sect. 14.2, we shall study the
EP under strong electric eld in HD said semiconductors. The Sect. 14.2.2, explores
the EP in the presence of quantizing magnetic eld under strong electric eld in HD
said materials. In Sect. 14.2.3, we study the EP in QWs of HD III-V, ternary and
quaternary materials under strong electric eld. In Sect. 14.2.4, the EP has been
investigated in NWs of HD III-V, ternary and quaternary materials. In Sect. 14.2.5,
the EP has been investigated in QBs of HD III-V, ternary and quaternary materials
In Sect. 14.2.6, we study the magneto EP in QWs of HD III-V, ternary and quaternary materials under strong electric eld. In Sect. 14.2.7, the magneto EP in
effective mass superlattices of HD said materials under strong electric eld has been
investigated. The last Sect. 14.3, contains 43 open research problems.

14.2.1 The EP Under Strong Electric Field in HD III-V,
Ternary and Quaternary Materials
In the presence of strong electric eld Fs along x direction, the electron energy
spectrum in Kane type III-V semiconductors whose unperturbed conduction electrons obey the three band models of Kane can be expressed following [1] as
DOI 10.1007/978-3-319-11188-9_14
467
468
14
Appendix D: The EP from HD III-V, Ternary and Quaternary
2 k 2
h
e6
e7 1 CE2
e1 E 4 e2 E 3 e3 E2 e4 E e5
2mc
1 CE
14:1
where
e1 Qf x1 ;
Qf
mc 4
E 5ef Eg2 6Gf 7hf Eg4 ;
mr g
mr
1
1
1
mc mv
is the reduced mass, mv is the effective heavy hole mass at the edge of the valance
band ef = AfPf,
Af F Eg Eg d0 2 mc 6m2c d0 4 1 ;
F eFs ; Fs is the electric eld along x direction.
DEg2
1
1
1
; v 6Eg2 9DEg 4D2 ;
; Gf ef 4d0 Cf ;
mr
mc mv
v
r 2 Eg d0
;
Cf 2Eg Q2 PQEg Eg0 2p2 Eg ; P 0
2 Eg d0
6
2 1
r0 Eg DEg D2
v
3
t2
6
2 12
Q ; t Eg D ; hf 4d0 ef Cf Bf 1 ; Bf P Q2
v
3
2
ab
Pf Eg3 ef Eg2 Gf hf Eg4 ; x1 a21 ; a1 ;
c
1
1
2 1
a ;b
; c Eg D ;
Eg
Eg D
3
d0
e2 Qf x2 ; x2 2a1 b1 ; b1 c2 ac bc ab;

e3 1 Pf a1 Qf x3 ; x3 b21 2a1 c1 ;
1
a
b
c1 1 1 ;
c
c
c
2c1 b1
cc1
e4 1 Pf b1 Qf x4 ; x6
1
; x4 2b1 c1 ;
c
b1
e5 1 Pf c1 Qf x5 ;
x5 c21 2c1 b1 ; e7 Qf x7 ; x7 c21 ; e6 1 Pf c1 Qf x6 ;
14.2
469
Using (14.1) and (1.4) we get

ZE
2 k 2
h
2mc
ZE
Fvdv e1
1
ZE
4
E v3 Fvdv
E v Fvdv e2
1
1
ZE
ZE
2
e3
E v Fvdv e4
1
ZE
e5
E vFvdv
1
ZE
Fvdv e6
1
1
14:2
Fvdv
1 cE v
ZE
Fvdv1 cE v2
e7
1
Let us put
ZE
E v4 Fvdv
I11
1
ZE
ZE
E
Fvdv
4
1
ZE
v Fvdv 6E
4
1
v2 Fvdv
14:3
1
ZE
2E 3
ZE
vFvdv 4E
1
v3 Fvdv
1
Now
ZE
v4 Fvdv
1
3g4g
g5g
E
E 2
1 Erf
exp 2
gg
8p
4Ep
gg
3g4g
2gg
E
E 2
1 Erf
exp 2 d00 E; gg
gg
8p
3E
gg
ZE
v2 Fvdv
1
g2g
E
1 Erf
gg
4
14:4
14:5
470
14
ZE
1
ZE
1
gg
E 2
vFvdv p exp 2
gg
2 p
g3g
E 2
E2
v3 Fvdv p exp 2 1 2
gg
gg
2 p
14:6
14:7
Thus
3g4g
2gg
E4
E
E
E 2
1 Erf
1 Erf
exp 2
gg
gg
2
8p
3E
gg
I11
E 3 gg
3
E
E 2
Egg 2 1 Erf p exp 2
2
gg
gg
p
2Eg3g
14:8
E
E
p exp 2 1 2
gg
gg
p
2
u0 E; gg
In Chap. 1 we have proved that
ZE
Ia; E; gg
1
"
#
2
p
1 p4
X
p u2
Fvdv
2
e
u2
p e
sinhpu i
e
cgg
1 eE v cgg p
p
p1
14:9
where u 1cE
cg :
g
The theorem of differentiation under the sign of integration tells us

o
ox
ZBx
ZBx
Fx; ydy
Ax
o
oBx
Fx; ydy Fx; Bx
ox
ox
Ax
Fx; Ax
14:10
oAx
ox
where the notations have their usual meaning and the integrals are convergent.
14.2
471
Using (14.9) and (14.10) and differentiating (14.9) with respect to E we get
ZE
c
1
E2
q exp 2
gg
1 cE v
pg2g
1
"
#
2
1 p4
2
1 X
e
u2
p e 2u
sinhpu
gg p1 p
cgg p
Fvdv
14:11
p
1
X
p2
p u2 1
2
2 1
p eu
e 4 coshpu i
e 2u
cgg
gg p1
gg
cgg p
ZE
)
1
Fvdv
1 cE v2
c3 E; gg ; c iD3 E; gg ; c
where
2
1
1
E 2
4ueu X
p2 1
c3 E; gg ; c
p sinhpu
exp 2 2 2 p
exp
pcgg
gg
4
c gg p p1
1
X
p2
2
u2
4 coshpu
p
e
e
c2 g2g p
p1
2u
1 cE
expu2 ; u
c2 g2g
cgg
D3 E; gg ; c
Again (14.9) can be written as

ZE
1
Fvdv
c1 c; E; gg ic2 c; E; gg
1 cE v
"
where c1 c; E; gg
2p u2
e
cgg p
1 p2
P
e 4
p1
14:12
p
2
sinhpu and c2 c; E; gg cgp eu .
g
We know that
ZE
1
E
E
3
E v3 Fvdv 1 Erf E2 g2g
2
gg
2
gg E22
p e gg 4E2 g2g
2 p
u1 E; gg
14:13
472
14
Therefore the dispersion relation in HD III-IV semiconductors whose unperturbed conduction electrons obey the three band models of Kane in the presence of
an electric eld along x axis can be expressed as
h2 k 2
J4 E; c; gg
2mc
where J4 E; c; gg J1 E; c; gg iJ2 E; c; gg ;
14:14
E
J1 E; c; gg 21 Erf 1 e1 u0 E; gg e2 u1 E; gg
gg
e3 h0 E; gg e4 c0 E; gg
E
eg1 1 Erf e6 c1 E; c; gg e7 c3 E; c; gg
gg
2
and J2 E; c; gg 21 Erf gE 1 e6 c2 E; c; gg e7 D3 E; c; gg .
g
For two band model of Kane, the dispersion relation in the presence of electric
eld Fs along x direction is given by
h2 k2
P11f E1 aE Q11f
2mc
14:15
hF
c
; Q11f 12m
where P11f 1 Q11f m5m
2 :
r Eg
rE
g
Therefore under the condition of heavy doping (14.15) assumes the form
h2 k 2
J5 E; gg
2mc
14:16a
where J5 E; gg P11f c2 E; gg Q11f :

Thus (14.14) and (14.16a) are key equations for investigating the electronic
properties in III-V Kane type heavily doped semiconductors in the presence of a
strong electric eld.
The EEM in III-V Kane type HD semiconductors in the presence of a strong
electric eld whose energy band structures in the absence of any perturbation are
dened by three and two band models of kane can be written from (14.14) and
(14.16a) as
m EFE ; F mc Real part of J4 EFE ; c; gg 0
14:16b
14.2
473
and
m EFE ; F mc J5 EFE ; gg 0
14:16c
where EFE is the Fermi energy in the present case.

Thus following (14.14) electron concentration is given by
n0
gv 2mc 32
Real part of J6 EFE ; c; gg J7 EFE ; c; gg

3p2 h2
3
where J6 EFE ; c; gg J4 EFE ; c; gg 2 and J7 EFE ; c; gg
s
P
14:17
LrJ6 EFE ; c; gg
r1
For the dispersion relation (14.16a) the corresponding electron concentration can
be written as
n0
gv 2mc 32
J8 EFE ; gg J9 EFE ; gg
3p2 h2
14:19a
P
3
where J8 EFE ; gg J5 EFE ; gg 2 and J9 EFE ; gg sr1 LrJ8 EFE ; gg :
The velocity along z direction and the density of states function in this case for
HD optoelectronic Kane type materials under intense electric eld whose conduction electrons in the absence of perturbation obey the three band model of Kane
can respectively be written as
r
1=2
2 J4 E01E0 ; c; gg
mc J40 E01E0 ; c; gg
14:19b
2mc 3=2 q
J4 E01E0 ; c; gg J40 E01E0 ; c; gg

h2
14:19c
vz E01
NE01 4pgv
0
E E01HDE0 ; E01HDE0 X1 W hm; X1 is the root of the equation
where E1E
0
J4 X1 ; c; gg 0
14:19d
JLHD
4pa0 emc gm
Real part of
h3
Za
E01HDE0
J4 E01E0 ; c; gg f EdE01E0
14:19e
474
14
Similarly the EP for perturbed two band model of Kane and that of parabolic
energy bands can respectively be expressed as
JLHD
4pa0 emc gm
h3
Za
J5 E02E0 ; c; gg f Ed E02E0
14:19f
E02HDE0
where E02E0 E E02HDE0 ; E02HDE0 X2 W hm; X2 is the root of the equation

J5 X2 ; c; gg 0:
14:19g
14.2.2 The EP from the Presence of Quantizing Magnetic

Field Under Strong Electric Field in HD III-V,
Ternary and Quaternary Materials
The electron energy spectrum under magnetic quantization can be written as
h2 kz2
1
n hx0 J4 E; c; gg
2
2mc
14:20
h2 kz2
1
n hx0 J5 E; gg
2
2mc
14:21a
The EEM in this case can be written using (14.20) and (14.21a) as
m EFEB ; F mc Real part of J4 EFEB ; c; gg 0
14:21b
and
m EFEB ; F mc J5 EFEB ; gg 0
14:21c
where EFEB is the Fermi energy in the present case.

The electron concentration for the dispersion relation (14.20) is given by
p
nmax
X
eBgv 2mc
n0
Real
part
of
J10 EFEB ; c; gg ; n J11 EFEB ; c; gg ; n
2
p2
h
n0
14:22
q
where J10 EFEB ; c; gg ; n J4 EFEB ; c; gg ; n n 12hx0 and J11 EFEB ; c; gg ; n

Ps
r1 LrJ10 EFEB ; c; gg ; n:
14.2
475

JHBE0
nmax
X
a0 e2 Bgv kB T
Real
part
of
F0 gDB4;1
2p2 h2
n0
14:23
where gDB4;1 EFEB LDB4;1 W htkB T1 and LDB4;1 is the Landau subband energy which can be obtained from (14.20) by substituting kz 0
and E LDB4;1 :
The electron concentration for the dispersion relation (14.2.1) is given by
n0
p nmax
eBgv 2mc X
J12 EFEB ; gg ; n J13 EFEB ; gg ; n
p2 h2
n0
14:24a
q
where J12 EFEB ; gg ; n J5 EFEB ; gg ; n n 12hx0 and J13 EFEB ; gg ; n
Ps
r1 LrJ12 EFEB ; gg ; n:
JHBE0
nmax
a0 e2 Bgv kB T X
F0 gDB4;2
2p2 h2
n0
14:24b
where gDB4;2 EFEB LDB4;2 W htkB T1 and LDB4;2 is the Landau subband energy which can be obtained from (14.21a) by substituting
kz 0 and E LDB4;2 :
14.2.3 The EP from QWs of HD III-V, Ternary

and Quaternary Materials Under Strong Electric Field
For QWs the 2D dispersion laws for (14.14) and (14.16a) assume the forms
h2 ks2
h2 nz p 2
J4 E; c; gg
2mc 2mc dz
14:25
h2 ks2
h2 nz p 2
J5 E; gg
2mc 2mc dz
14:26a
and
476
14
The EEM in this case can be written using (14.25) and (14.26a) as
m EFESQ ; F mc Real part of J4 EFESQ ; c; gg 0
14:26b
and
m EFESQ ; F mc J5 EFESQ ; gg 0
14:26c
where EFESQ is the Fermi energy in this case.

The 2D electron concentration for (14.25) can be written as
n0
nX
zmax
m c gv
Real
part
of
J17 EFESQ ; c; gg ; nz J18 EFESQ ; c; gg ; nz 14:27
ph2
nz 1
h2 nz p 2
where J17 EFESQ ; c; gg ; nz J4 EFESQ ; c; gg 2m
d and J18 EFESQ ; c; gg ; nz
c
z
Ps
r1 LrJ17 EFESQ ; c; gg ; nz :
J2DE0
q
J4 EnzE0 ;1 ; c; gg
a0 emc gv mc 1=2
J17 EFESQ ; c; gg ; nz
Real part of
0
2
J4 EnzE0 ;1 ; c; gg
2pdz
h 2
nzmin
nX
zmax
14:28
where EnzE0 ;1 is the sub-band energy in this case and is obtained by substituting
ks 0 and E EnzE0 ;1 in (14.25).
The 2D electron concentration for (14.26a) can be written as
nzmax
m c gv X
J19 EFESQ ; c; gg ; nz J20 EFESQ ; c; gg ; nz
n0
p
h2 nz 1
14:29a
h

where J19 EFESQ ; c; gg ; nz J5 EFESQ ; c; gg 2m
ndz p2 and J20 EFESQ ; c; gg ; nz
c
z
s
P
LrJ19 EFESQ ; c; gg ; nz :
2
r1
J2DE0
q
J5 EnzE0 ;2 ; c; gg
a0 emc gv mc 1=2

0
2
J5 EnzE0 ;2 ; c; gg
2pdz
h 2
nzmin
nX
zmax
14:29b
where EnzE0 ;2 is the sub-band energy in this case and is obtained by substituting
ks 0 and E EnzE0 ;2 in (14.26a).
14.2
477
14.2.4 The EP from NWs of HD III-V, Ternary

The dispersion relations of the 1D electrons in NWs of HD optoelectronic materials
in the presence of light waves can be expressed from (14.14) and (14.16a) as
ky2
ky2

2mc J4 E; c; gg
h2

2mc J5 E; c; gg
h2

pnz71 2
pnx71 2

dz
dx
14:29c

pnz72 2
pnx72 2

dz
dx
14:30
where nx7J J 1; 2; 3 is the size quantum number.

The electron concentration per unit length are respectively given by
n1DL
p
2gv 2mc
Real part of
p
h
nX
x71max nX
z71max

/77;1 EF1DLE0 ; nx71 ; nz71 /78;1 EF1DLE0 ; nx71 ; nz71
nx71 1 nz71 1
14:29e
n1DL
p nx72max nX
z72max

2gv 2mc X
/79;2 EF1DLE0 ; nx72 ; nz72

ph
nx72 1 nz72 1

/80;2 EF1DLE0 ; nx72 ; nz72
14:31
where EF1DLE0 is the Fermi energy in NWs in the present case.

1
/77;1 EF1DLE0 ; nx71 ; nz71 J4 EF1DLE0 ; c; gg G71 nx71 ; nz71 2 ;
"

#
h2
pnx7i 2
pnz7i 2
G7i nx7i ; nz7i
;
2mc
dx
dz
/78;1 EF1DLE0 ; nx71 ; nz71
s0
X
r1

Lr /77;1 EF1DLE0 ; nx71 ; nz71 ;

1

/79;2 EF1DLE0 ; nx72 ; nz72 J5 EF1DLE0 ; c; gg G72 nx72 ; nz72 2 and
s
X

/80;2 EF1DLE0 ; nx72 ; nz72
Lr /79;2 EF1DLE0 ; nx72 ; nz72 :
r1
478
14
The generalized expression of photo current in this case is given by

IL
nx7imax nX
z7imax

a0 egv kB T X
F0 g7iE0
ph
n 1 n 1
x7i
14:32
z7i
0
EF1DLE0 E7iE
Wht
0
and E7iE
are the sub-band energies in this case
where, g7iE0
kB T
0
and are dened through the following equations
0
9
0
=
J4 E71E
;
c;
g
n
;
n
G
71
x71
z71
g
0

0
; c; gg G72 nx72 ; nz72 ;
J4 E72E
0
14:33
Real part of the (7.22) should be used for computing the EP from NWs of HD
optoelectronic materials under intense electric eld whose unperturbed energy band
structures are dened by the three-band model of Kane.
14.2.5 The EP from QBs of HD III-V, Ternary

The dispersion relations of the electrons in QBs of HD optoelectronic materials in
the presence of intense electric eld can respectively be expressed from (14.14) and
(14.16a) as

2mc J4 EQ1E0 ; c; gg
h2

2mc J5 EQ2E0 ; c; gg
h

H71 nx71 ; ny71 ; nz71
14:34

H72 nx72 ; ny72 ; nz72
14:35
where EQiE0 is the totally quantized

2
2
2
pn
pnx7i
dy7i
pndz7i
:
dx
y
z

energy and H7i nx7i ; ny7i ; nz7i
The electron concentration can, in general, be written as

n0DL
E
E
2gv
dx dy dz
nX
y7imax nX
x7imax nX
z7imax
nx7i 1 ny7i 1 nz7i 1

F1 g7i0DE0
14:36
where g7i0DE0 F0DLEk0B T QiE0 and EF0DLE0 is the Fermi energy in QBs of HD
optoelectronic materials in the presence of intense electric eld as measured from
14.2
479
the edge of the conduction band in the vertically upward direction in the absence of
any quantization.
Real part of the (7.26) should be used for computing the carrier density from
QBs of HD optoelectronic materials whose unperturbed energy band structures are
dened by the three-band model of Kane.
The photo-emitted current densities in this case are given by the following
equations
J0DL
J0DL
a0 egv mc
1=2
Real part of
dx dy dz 2
2q

3
nX
y71max nX
z71max
x71max nX
J4 Enz71 ; c; gg

4
5F1 g710DE0
0
J4 Enz71 ; c; gg
14:37
2q

3
nX
y72max nX

z72max
x72max nX
J
E
;
c;
g
1=2
5
nz72

g
a0 egv mc
4
5F1 g720DE0 :
0 E
dx dy dz 2
J
;
c;
g
nz72
g
5
14:38
14.2.6 The Magneto EP from QWs of HD III-V, Ternary

Under magnetic quantization, (14.14) and (14.16a) assume the forms
1
h2 nz p 2
n hxc
J4 EE0 1 ; c; gg
2
2mc dz
14:39a
1
h2 nz p 2
n hxc
J5 EE0 2 ; c; gg
2
2mc dz
14:39b
and
where E E0 1 and EE0 2 are totally quantized energy in the respective cases.
The energy along z direction for both the cases can be expressed as
h2 nz p 2
J4 E nz E0 1 ; c; gg
2mc dz
14:39c
480
14
and
h2 nz p 2
J5 E nz E0 2 ; c; gg
2mc dz
14:39d
where E nz E0 1 and Enz E0 2 are the energies along z direction for (14.39a) and (14.39b)
respectively.
The electron concentration for (14.39a) is given by
n0
nmax nX
zmax
X
gv eB
Real part of
F1 gE0D;1
ph
n0 n 1
14:39e
where gE0D;1 kB T1 EFTD EE0 1 , EFTD is the Fermi energy in this case.
q
p nzmax nmax J E
X
X
4 nzE0 1 ; c; gg
a0 e Bgm 2
F1 gE0D1
p
0
mc nz n0 J4 EnzE0 1 ; c; gg
hdz
2
JTDE0
14:39f
min
The electron concentration for (14.39b) is given by

nmax X
zmax
gv eB X
F1 gE0D;2
ph n0 n 1
n
n0
14:39g
where gE0D;2 kB T1 EFTD EE0 2 :

q
p nzmax nmax J E
X
X
5 nzE0 2 ; c; gg
a0 e Bgm 2
F1 gE0D2 :
p
0
mc nz n0 J5 EnzE0 2 ; c; gg
hdz
2
JTDE0
14:39h
min
14.2.7 The Magneto EP from Effective Mass Superlattices

of HD III-V, Ternary and Quaternary Materials
Under Strong Electric Field
The electron dispersion law in III-V effective mass super lattices can be written as
kx2
1
2
cos1 ffHD E; c; gg ; ky ; kz g2 k?

L20
14:40
14.2
481
where
fHD E; c; gg ; ky ; kz a1HD cosa0 C1HD E; gg1 ; c1 ; k? b0 D1HD E; gg2 ; c2 ; k?
a1HD
a2HD
a2HD cosa0 C1HD E; gg1 ; c1 ; k? b0 D1HD E; gg2 ; c2 ; k? ;

s
s
mc2 J40 0; c2 ; gg2
mc2 J40 0; c2 ; gg2 1
2
1
;

4
mc1 J40 0; c1 ; gg1
mc1 J40 0; c1 ; gg1
s
s
mc2 J40 0; c2 ; gg2
mc2 J40 0; c2 ; gg2 1
2

1
;

4
mc1 J40 0; c1 ; gg1
mc1 J40 0; c1 ; gg1
2mc1
2 1=2
C1HD E; gg1 ; c1 ; k? 2 J4 E; gg1 ; c1 k?
and
h
2mc2
2 1=2
D1HD E; gg1 ; c1 ; k? 2 J4 E; gg2 ; c2 k?
:
h
In the presence of a quantizing magnetic eld B along kx direction, the magneto

electron energy spectrum can be written as
kx2 xHD E; gg ; c; n
14:41a
1
where xHD E; gg ; c; n L12 cos1 ffHD E; c; gg ; ng2 2eB
h n 2
0
fHD E; c; gg ; n a1HD cosa0 C1HD E; gg1 ; c1 ; n b0 D1HD E; gg2 ; c2 ; n

a2HD cosa0 C1HD E; gg1 ; c1 ; n b0 D1HD E; gg2 ; c2 ; n;
2mc1
2eB
1
n 1=2
C1HD E; gg1 ; c1 ; n 2 J4 E; gg1 ; c1
h

2
h
2mc2
2eB
1
n 1=2 :
J4 E; gg2 ; c2
2
h
2
h
The EEM in this case can be written from (14.41a) as
and D1HD E; gg1 ; c1 ; n
m ESL ; gg ; c; n
h2
Real part of xHD ESL ; gg ; c; n0
2
14:41b
where ESL is the Fermi energy in this case.

n0
nmax
X
gv eB
Real part of
J40 ESL ; gg ; n J41 ESL ; gg ; n
2
p
h
n0
1
where J40 ESL ; gg ; n xHD ESL ; gg ; c; n2

J40 ESL ; gg ; n:
and
J41 ESL ; gg ; n
14:42
Ps
r1
Lr
482
14

JESE0
nmax
a0 e2 Bgm kB T X
F0 gSLL1
2p2 h2
n0
14:43
where gSLL1 kB T1 ESL xSL1 W hm and xSL1 is the sub-band energy
in this case.
The electron dispersion law in III-V effective mass super lattices whose constituent materials obey (14.16a) can be expressed as
kx2
1
2
cos1 ffHD5 E; gg ; ky ; kz g2 k?

L20
14:44
where
fHD5 E; gg ; ky ; kz a1HD5 cosa0 C1HD5 E; gg1 ; k? b0 D1HD5 E; gg2 ; k?
a1HD5
a2HD5
a2HD5 cosa0 C1HD5 E; gg1 ; k? b0 D1HD5 E; gg2 ; k? ;

s
s
mc2 J50 0; gg2
mc2 J50 0; gg2 1
2
1 4
;
0
mc1 J5 0; gg1
mc1 J50 0; gg1
s
s
mc2 J50 0; gg2
mc2 J50 0; gg2 1
2

1
;
:
4
mc1 J50 0; gg1
mc1 J50 0; gg1
2mc1
2
C1HD5 E; gg1 ; k? 2 J5 E; gg1 k?
and
h
2mc2
2
D1HD5 E; gg1 ; k? 2 J5 E; gg2 ; k?

h
In the presence of a quantizing magnetic eld B along kx direction, the magnetoelectron energy spectrum can be written as
kx2 xHD5 E; gg ; n
14:45a
where
1
2eB
1
n ;
xHD5 E; gg ; n 2 cos1 ffHD5 E; gg ; ng2
h
2
L0
fHD5 E; gg ; n a1HD5 cosa0 C1HD5 E; gg1 ; n b0 D1HD5 E; gg2 ; n
a2HD5 cosa0 C1HD5 E; gg1 ; n b0 D1HD5 E; gg2 ; n;
2mc1
2eB
1
n
C1HD5 E; gg1 ; n 2 J5 E; gg1
h
2
h
and D1HD5 E; gg1 ; n
2mc2
2eB
1
n
J5 E; gg2
2
h
2
h
14.2
483
The EEM in this case can be written from (14.45a) as

m ESL ; gg ; n
h2
xHD5 ESL ; gg ; n0
2
14:45b

n0
nmax
gv eB X
J50 ESL ; gg ; n J51 ESL ; gg ; n
p2 h n0
1
where J50 ESL ; gg ; n xHD5 ESL ; gg ; n2

J50 ESL ; gg ; n
JESE0
and
J51 ESL ; gg ; n
nmax
a0 e2 Bgm kB T X
F0 gSLL2
2p2 h2
n0
14:46
Ps
r1
Lr
14:47
where gSLL2 kB T1 ESL xSL2 W hm and xSL2 is the sub-band energy
in this case.

(R:14:1) Investigate the EP for the HD bulk materials whose respective dispersion
relations of the carriers in the absence of any eld is given in Chap. 1 in
the presence of intense electric eld which change the original band
structure and consider its effect in the subsequent study in each case.
(R:14:2) Investigate the EP as dened in (R.14.1) in the presence of an arbitrarily
oriented non-uniform light waves for all the HD materials as considered
R.14.1.
(R:14:3) Investigate the EP as dened in (R.14.1) in the presence of an arbitrarily
oriented non-quantizing alternating non-uniform electric eld for all the
cases of R.14.1.
(R:14:4) Investigate the EP as dened in (R.14.1) for all the HD materials in the
presence of arbitrarily oriented non-quantizing non-uniform electric eld
for all the appropriate cases.
(R:14:5) Investigate the EP as dened in (R.14.1) for all the HD materials in the
presence of arbitrarily oriented non-quantizing alternating electric eld
for all the appropriate cases of problem R.14.4.
(R:14:6) Investigate the EP as dened in (R.14.1) for the negative refractive
index, organic, magnetic and other advanced optical HD materials in the
presence of arbitrarily oriented electric eld.
484
14
(R:14:7) Investigate the EP as dened in (R.14.1) in the presence of alternating

non-quantizing electric eld for all the problems of R.14.6.
(R:14:8) Investigate the EP as dened in (R.14.1) for all the multiple quantum
conned HD materials whose unperturbed carrier energy spectra are
dened in R.14.1 in the presence of arbitrary oriented quantizing magnetic eld by including the effects of spin and broadening respectively.
(R:14:9) Investigate the EP as dened in (R.14.1) in the presence of an additional
arbitrarily oriented alternating quantizing magnetic eld respectively for
all the problems of R.14.8.
(R:14:10) Investigate the EP as dened in (R.14.1) in the presence of arbitrarily
oriented alternating quantizing magnetic eld and arbitrary oriented nonquantizing non-uniform electric eld respectively for all the problems of
R.14.8.
(R:14:11) Investigate the EP as dened in (R.14.1) in the presence of arbitrary
oriented alternating non-uniform quantizing magnetic eld and additional arbitrary oriented non-quantizing alternating electric eld
respectively for all the problems of R.14.1.
(R:14:12) Investigate the EP in the presence of arbitrary oriented and crossed
quantizing magnetic and electric elds respectively for all the problems
of R.14.8.
(R:14:13) Investigate the EP for all the appropriate HD low-dimensional systems
(R:14:14) Investigate the EP for all the appropriate HD low-dimensional systems
(R:14:15) Investigate the EP for all the appropriate HD systems of this chapter
of elliptical Hill and quantum square rings respectively.
(R:14:17) Investigate the EP for multiple carbon nano-tubes.
(R:14:18) Investigate the EP for multiple carbon nano-tubes in the presence of nonquantizing non-uniform alternating light waves.
(R:14:19) Investigate the EP for multiple carbon nano-tubes in the presence of nonquantizing non-uniform alternating magnetic eld.
(R:14:20) Investigate the EP for multiple carbon nano-tubes in the presence of
crossed electric and quantizing magnetic elds.
(R:14:21) Investigate the EP for all types of HD semiconductor nano-tubes for all
the HD materials whose unperturbed carrier dispersion laws are dened
in Chap. 1.
(R:14:22) Investigate the EP for HD semiconductor nano-tubes in the presence of
non-quantizing alternating light waves for all the materials whose
unperturbed carrier dispersion laws is dened in Chap. 1.
non-quantizing alternating magnetic eld for all the materials whose
unperturbed carrier dispersion laws are dened in Chap. 1.
14.3
485

non-uniform light waves for all the materials whose unperturbed carrier
dispersion laws are dened in Chap. 1.
alternating quantizing magnetic elds for all the materials whose
unperturbed carrier dispersion laws are dened in Chap. 1.
crossed electric and quantizing magnetic elds for all the materials
whose unperturbed carrier dispersion laws are dened in Chap. 1.
(R:14:27) Investigate the EP for all the appropriate nipi structures of the HD
Chap. 1.
Chap. 1, in the presence of an arbitrarily oriented non-quantizing nonuniform additional electric eld.
Chap. 1 in the presence of non-quantizing alternating additional magnetic eld.
Chap. 1 in the presence of quantizing alternating additional magnetic
eld.
Chap. 1 in the presence of crossed electric and quantizing magnetic
elds.
(R:14:32) Investigate the EP for HD nipi structures for all the appropriate cases of
all the above problems.
(R:14:33) Investigate the EP for the appropriate accumulation layers of all the
Chap. 1 in the presence of crossed electric and quantizing magnetic
elds by considering electron spin and broadening of Landau levels.
(R:14:34) Investigate the EP for quantum conned HD III-V, II-VI, IV-VI, HgTe/
CdTe effective mass super-lattices together with short period, strained
layer, random, Fibonacci, poly-type and saw-tooth super-lattices.
(R:14:35) Investigate the EP in the presence of quantizing magnetic eld respectively for all the cases of R.14.34.
(R:14:36) Investigate the EP in the presence of non-quantizing non-uniform
additional electric eld respectively for all the cases of R.14.34.
(R:14:37) Investigate the EP in the presence of non-quantizing alternating electric
eld respectively for all the cases of R.14.34.
(R:14:38) Investigate the multiphoton EP in the presence of crossed electric and
quantizing magnetic elds respectively for all the cases of R.14.34.
486
14
(R:14:39) Investigate the EP as dened in (R.14.1) for HD quantum conned

super-lattices for all the problems of R.14.35.
(R:14:40) Investigate the EP as dened in (R.14.1) in the presence of quantizing
non-uniform magnetic eld respectively for all the cases of R.14.34.
(R:14:41) Investigate the EP as dened in (R.14.1) in the presence of crossed
electric and quantizing magnetic elds respectively for all the cases of
R.14.34.
(R:14:42) Investigate the EP as dened in (R.14.1) for all the systems in the
presence of alternating strain.
(R:14:43) Investigate all the problems of this chapter by removing all the mathematical approximations and establishing the respective appropriate
Reference
1. K.P. Ghatak, S. Bhattacharya, Debye Screening Length; Effects of Nanostructured Materials,
vol. 255. Springer Tracts in Modern Physics (Springer, Berlin, 2014)
Materials Index
A
Antimony, 5, 76
HgTe, 126, 242

HgTe/Hg1-xCdxTe, 283, 356, 364
B
Bismuth, 75
Bi2Te3, 5, 76, 90, 214, 427
I
InAs, 385, 386
In1-xGaxAsyP1-y, 311, 333, 341, 317, 374
InxGa1xAsInP, 356, 364
InSb, xi, 108, 111113, 119, 175, 178, 186,
221, 224, 230
C
Cadmium Arsenide (Cd3As2)
Cadmium diphosphide, 76
CdGeAs2, 108, 109, 174176, 221223
CdS, 108, 113, 114, 175, 179, 180, 221, 225,
226, 280289, 384386
CdSb2
CuCl, 129, 398, 438
G
GaAs, 139, 194, 221, 223, 224, 241, 378380,
385388, 390
GaAs/Ga1-xAlxAs, 280282, 284286
GaSb, 5, 103, 105, 107, 126, 173, 226, 230,
392, 430
GaP, 5, 80, 8284, 107, 113116, 125, 139,
162, 175, 181, 182, 189, 194, 225, 226,
392, 404, 425
Germanium, 5, 7476, 94, 428, 433
Graphite, 384, 392
Gray tin, 129
P
Pb1-xSnxSe
Pb1-xGexTe, 226, 433
Pb1-x-GaxTe, 128, 433
PbSe, 5, 280
PbTe, 5, 183, 231, 280
PtSb2, 5, 89, 113, 139, 183, 189, 194, 392, 404
S
Stressed n-InSb, 5, 113, 119, 183, 226
T
Tellurium, 5, 226, 392
Z
Zinc Diphosphide, 76, 130
ZnSe, 280, 284
H
Hg1-xCdxTe, 4, 284, 286289, 311313, 317,
320322, 333335, 337339, 341

DOI 10.1007/978-3-319-11188-9
487
Subject Index
09
0D dispersion, 213
1D dispersion relation, 145, 148, 159, 173
1D DOS function, 140
2D, 31
2D area, 55
2D dispersion, 89
2D dispersion relation, 82
2D electron concentration, 477
2D electron dispersion law, 92
2D electron energy spectra, 328
2D electrons, 24
2D EP, 123
300 open research problems, 401
II-VI, 45
II-VI QB HD, 283
II-VI QEP, 265
II-VI semiconductors, 414
II-VI superlattices, 251
III-V Kane type HD semiconductors, 473
III-V materials, 146
III-V semiconductors, 127, 407
III-V SLs, 241
IV-VI, EMSLs, 267
IV-VI materials, 57
IV-VI semiconductors, 47, 420
IV-VI super-lattices, 278
A
Absence of band tails, 98
Accumulation layers, 436, 486
Along Z direction, 213
Alternating electric eld, 237, 437
Alternating quantizing magnetic eld, 326, 400
Analytic, 11, 27
Anisotropic, 4
Arbitrarily oriented quantizing, 464
Area quantization, 403
B
Band gap, 16, 69
Band gap measurement, 376
Band model of Kane, 198
Band non-parabolicity, 57
Band structure, 433
Gallium antimonide, 5
Germanium, 385
II-V compounds, 404
II-VI compoundHopeld model, 5, 43, 107
IV-VI compounds, 107
Newson and Kurobe model, 4
nonlinear optical, 3, 6, 7, 1416, 376,
434436, 449, 450
Palik model, 39, 149, 150, 221
parabolic band, 123
platinum antimonide, 5
Stillman model, 107, 147, 148, 201, 221
stressed materials, 68, 107, 392
three band Kane, 123
two band Kane, 28, 123
Band, 21, 27, 65, 125, 127129, 433
Band structures, 31, 449
Band tails, 15, 21, 23, 28, 33, 44, 49, 57, 69,
71, 80, 123, 141, 152, 201, 206, 220
Bandwidth, 341
Bangert, 156, 233
Bi, 125
Bohr Magneton, 410
Boltzmann transport equation, 123
Brillouin zone, 433

DOI 10.1007/978-3-319-11188-9
489
490
Broadening, 438
Broadening of Landau levels, 346
Bulk, 6, 21
Bulk III-V, 27
Bulk specimens, 97
Burstein Moss, 124
C
Carbon nano-tubes, 485
Carrier concentration, 63
Carrier connement, 139
Carrier contribution to the elastic constants,
371
Carrier degeneracy, 341
Carrier density, 332
Carrier energy spectra, 43
Carrier masses, 416
Carrier statistics, 25, 146, 147, 150, 151, 157,
163, 164, 171, 174, 416
Carrier transport in HD quantized materials,
123
CdS/ZnSe, 285
Circular potential well, 435
Cohen, 233, 449
Colloidal, 5
Compatibility, 35
Complex analysis, 11
Complex contour, 27
Complex density of states function, 406, 409
Complex number, 10
Condition, 455
Condition of heavy doping, 104
Conduction, 255
Conduction band, 7, 21, 298, 328, 452
Conduction electron, 45, 52, 68, 98, 127, 215,
260, 423, 424, 460, 462
Constants, 305
Crossed, 449, 464
Crossed electric eld, 435
Crossed quantizing magnetic and electric
elds, 347
Cross elds conguration, 451, 459, 460
Cyclotron resonance, 403
Crystallographic, 388
Crystal potential, 296
Current density, 216
Cyclotron, 403
Cylindrical HD, 349
D
Debye screening length (ER), 315
De Haas-Van Alphen oscillations, 404
Subject Index
Density, 212
Density-of-states (DOS), 16, 27, 30, 31, 34, 36,
38, 42, 56, 57, 62, 64, 70, 72, 79, 106
quantum wire, 392
Diamagnetic resonance, 403
Diamond structure, 129
Differentiation, 247, 258
Differentiation under the sign of integration,
471
Diffusion coefcient, 376
Dimensional, 18
Dimensionless, 28
Dimensional quantization, 41, 105
Dimmock, 233
Dimmock model, 153, 418
Dirac electron, 131, 315
Discrete energy, 236
Dispersion, 125128, 268, 433, 484
Dispersion relation, 18, 24, 29, 33, 37, 41, 45,
48, 52, 68, 86, 88, 90, 100, 105, 140,
142, 144, 146, 147, 149, 170, 172, 201,
202, 219, 245, 247, 249, 260, 309, 371,
408, 423, 462
Dispersion relation in quantum well, 254
Dispersion relation of the conduction electrons
in HD, 405
DMR, 27, 31, 242, 441, 449, 452, 453
Doping, 14, 216
Doping superlattices, 437
DOS function, 51, 63, 317, 318
DOS function per sub-band, 102
DOS technique, 124
E
Edge, 21
EEM, 30, 91, 93, 154, 160, 421, 452, 454457,
460, 482
Effective, 410
Effective electron masses, 7, 107, 248
Effective mass, 15
Effective mass Superlattices, 242, 481
Einstein relation, 449, 464
E-k dispersion relation, 252
Elastic constants, 124, 371, 372
Electric, 449, 450, 452, 459, 462, 464
Electric eld, 14, 392, 397, 448, 457, 467, 468,
472477, 479
Electroluminescent devices, 390
Electromagnetic theory, 450
Electromagnetic wave, 297
Electron concentration, 21, 36, 44, 52, 77, 80,
81, 85, 87, 93, 94, 107, 142, 198, 200,
202, 203, 208, 212, 221, 258, 276, 414,
Subject Index
421, 429, 443, 448, 452, 454, 476, 480,
482
Electron concentration per band, 206
Electron concentration per unit area, 101
Electron concentration per unit length, 478
Electron degeneracy, 226, 228, 282, 311
Electron density, 274, 275, 277
Electron dispersion, 267
Electron dispersion law, 273, 481, 483
Electron energy spectrum, 128, 272, 415
Electrons, 269
Electron spin, 452
Electron statistics, 37, 84, 144
Electron transport, 14
Elliptic integral of second kind, 59
Emitted, 17
EMSLs under magnetic quantization, 268
Energy, 47, 454, 455
Energy band constants, 108
Energy gaps, 241
Energy spectra, 305, 349
Energy spectrum, 48, 99, 129
Energy-wave vector, 269, 273
Energy-wave vector dispersion relation, 261
EP, 24, 36, 82, 154, 156, 160, 167, 170, 330,
459, 461
EP from HD germanium under magnetic
quantization, 428
EP from HD lead germanium telluride under
magnetic quantization, 433
EP from HD nonlinear optical semiconductors
under magnetic quantization, 404
EP from HD NW Effective Mass Super Lattices, 353
EP from HD QB Effective Mass Super Lattices,
354
EP from Nano Wires of HD Bi2Te3, 166
EP from Nano Wires of HD GaP, 162
EP from Nano Wires of HD GaSb, 172
EP from Nano Wires of HD Ge, 168
EP from Nano Wires of HD PtSb2, 164
EP from Nano Wires of HD Te, 160
EP from QB of HD Gallium Antimonide, 219
EP from QB of HD Germinium, 216
EP from QB of HD III-V Semiconductors, 196
EP from QB of HD II-VI Semiconductors, 203
EP from QB of HD IV-VI Semiconductors,
205
EP from QB of HD nonlinear optical semiconductors, 194
491
EP from QB of HD Stressed Kane Type
Semiconductors, 208
EP from QB of HD Te, 209
EP from QWs, 158
EP from QWs of HD III-V, ternary and quaternary materials under strong electric
eld, 476
EP from the Presence of quantizing magnetic
eld, 475
Epitaxy, 3
Error function, 9
Exhibiting, 175
Expression, 168
External, 307
External light waves, 315
F
Factor, 410
Femto-second velocity map, 384
Fermi, 269
Fermi-Dirac integral, 27
Fermi-Dirac probability factor, 17, 19, 21, 46,
73, 91, 97, 318320
Fermi energy, 14, 15, 19, 21, 26, 33, 38, 45,
56, 57, 70, 140142, 194, 247, 251,
254, 258, 261, 264, 266, 269, 310,
318320, 325, 328, 330, 332, 353, 354,
406, 409, 411, 414, 416, 419, 421, 422,
425, 426, 452, 453, 473, 476479
Fermi level, 14, 413, 419, 429
Fields, 449
Film thickness, 227, 333
Finite, 32
Finite interactions, 299
Forbidden, 23
Forbidden zone, 15, 16, 24, 123, 124
Function, 27, 40, 56
G
Ga1-xAlxAs, 241
Gallium Phosphide, 425
Gaussian, 40, 237
Gaussian band, 13
Gaussian band tails, 61
Gaussian, exponential, Kane, Halperian, Lax
and Bonch-Burevich types of band tails,
130
Generalized expressions, 315
492
Generalized expression of photo current, 478
Graded interfaces, 242, 243, 248, 252, 255,
259261, 269, 273, 274, 441, 442
H
Hamiltonian, 295, 296
HD IV-VI, II-VI and stressed Kane type compounds, 434
HD gallium antimonide under magnetic quantization, 430
HD Kane type III-V semiconductors, 453
HD low-dimensional systems, 485
HD materials, 113, 123, 124, 364, 377, 397,
401, 406
HD nipi structures, 348
HD nonlinear optical semiconductors, 436
HD NWs, 330
HD optoelectronic materials, 479
HD QWs, 328
HD semiconductors, 130
HD stressed Kane type semiconductors, 158
HD II-VI semiconductors, 457
HD III-V, ternary and quaternary materials,
475
HD IV-VI semiconductors, 459
HD stressed Kane type semiconductors, 460
HD stressed semiconductors, 461
HD super-lattices, 448
HD Te, 424
HD zero dimensional systems, 237
Heavily doped II-VI EMSLs, 264
Heavily doped IV-VI materials, 417
Heavily doped Kane type semiconductors, 423
Heavy doping, 243, 256, 309, 435
Heavy hole, 39, 298, 412
HgTe, 229
HgTe/CdTe, 241, 242, 258, 271, 276, 392
Hole energy spectrum, 432
I
Imaginary, 23
Impurity potential, 33
Incident light, 341
Incident photon energy, 222
Increased band gap, 307
Incremental band gap, 372
Independent, 38
Indirect band-gap material, 385
Indirect test, 107
Inequality, 30, 32
Subject Index
Inferred, 367
Influence of light, 311
Influence of quantum connement, 113
Integral, 27
Integration, 35, 54
Intense photo excitation, 397
Intensity, 325
Intensity of light, 376
Inter-band optical transition, 299
Inter band recombination, 383
Interband transition matrix element, 298
Interband transitions, 298
Interfaces, 256
Internal photoemission spectroscopy, 389
Intrinsic Shockley surface state, 383
Inverse quantizing magnetic
eld, 355
Inversion, 3
Investigate, 22
Isotropic, 34
K
Kane, 71, 72, 404, 449, 464
k.p formalism of solid-state science, 397
k. p matrix, 6
L
Landau, 403, 454456, 458, 460, 463
Landau subbands/levels, 318320, 325, 346,
355, 367, 377, 403, 407, 410, 411, 415,
418, 424432, 434, 441448, 453, 460,
463, 475
Landau quantum number, 377
Landau sub-band energy, 453
Lax, 449
Light intensity, 307, 333
Light waves, 241, 295, 307310, 315,
317320, 328, 330332, 356, 372, 392,
477
Longitudinal, 7, 43, 248
Longitudinal effective masses, 47
Lowest positive root, 78, 89, 96
Low positive electron afnity, 380
M
Magnetic, 449, 450, 452, 459, 462, 464
Magnetic eld, 242, 403, 404, 416, 437
Magnetic eld/quantization, 14, 280285, 317,
319, 320, 325, 352, 355, 364, 367, 403,
412, 416, 420, 423, 467, 475, 482, 483
Subject Index
Magnetic quantization, 245, 249, 271, 364,
407, 446
Magnetic quantum limit, 452
Magnetic susceptibility, 404
Magneto dispersion, 429
Magneto dispersion law, 317319, 410, 411,
432
Magneto dispersion relation, 418, 422
Magneto electron dispersion, 263
Magneto EP, 267, 404, 415
Magneto EP from HD effective mass super
lattices, 355
Magneto-oscillatory phenomena, 403
Magneto-phonon oscillations, 404
Mathematical approximations, 438, 486
Mathematical compatibility, 107
Mid-infrared range, 388
Minimum photon energy, 375
Minority carriers, 376
Model of Bangert and Kastner, 60
Model of Kane, 331, 364
Model of Palik etal, 202
Model of Stillman etal., 147
Model of Wang, 227
Model of Wang and Ressler, 217
Monograph, 377
Multi-photon, 346
Multi-photon EP, 326
N
Nano-crystals, 5, 382
Nano-photonics, 295
Nano structured materials, 392
Nanostructures, 295
Nano-thickness, 14
Nano wires (NWs), 139, 151, 153, 236, 331
Negative refractive index, 190, 238, 438
Newly formulated electron dispersion law, 107
New variable, 55
N-Ge, 226
N-In1xGaxAsyP1y, 320
Nipi structures, 486
Nonlinear optical, 13
Nonlinear optical response, 376
Nonlinear optical semiconductors, 140, 435
Nonlinear response, 376
Non-quantizing electric eld, 437
Non-uniform light waves, 484
Normalized carrier degeneracy, 234, 236
493
Normalized electron degeneracy, 224, 231,
233, 311
Normalized EP, 222, 228, 282
Normalized incident photon energy, 225, 230,
235
Normalized magneto EP, 320
NW of IV-VI semiconductors, 155
NWs of II-VI materials, 152
O
One dimensional electron dispersion, 143
Operator, 451
Optical, 18
Optical matrix element (OME), 298, 299
Optoelectronic, 310, 330
Optoelectronic devices, 241
Optoelectronic materials, 341, 351
Orthogonal triads, 450
Oscillatory, 24, 341
Oscillatory manner, 346
Overall, 175
P
Palik, 39
Parabolic, 449, 452
Parabolic energy bands, 146, 199
Parabolic potential well, 435
Pb1-xGexTe, 229
PbSe/PbTe, 283
Periodic, 297
Periodic square arrays, 387
Permittivity of free space, 307
Perpendicular, 6
Perturbed two band model of Kane, 474
Photo current, 331
Photoelectric, 17
Photoelectric current density, 201
Photoemission-based microscopy techniques,
387
Photo-emitted current density, 204, 207, 209,
210, 214, 219
Photo-excitation, 398, 307, 317319, 326, 333,
346, 372
Photon, 296, 298, 299, 307
Photonic band structure, 386
Plane polarized light-wave, 305
Polarization vector, 304
Polarized light-wave, 304
Pole, 25
494
Pole-less, 48
Poles, 14
Porous silicon layer, 390
Potential well, 139, 485
Presence of quantizing, 463
Presented, 314
Primes, 247
Probability, 17
p-type atomic orbitals, 299
Q
QB of HD gallium phosphide, 211
QB of HD platinum antimonide, 212
QB effective mass HgTe/Hg1-xCdxTe and
InxGa1xAs/InP HD SLs, 367
Quantization, 266, 403, 404
Quantized energy, 63, 145, 148, 150, 202, 207,
211, 215, 216, 218, 221, 271, 277
Quantized energy along x direction, 264
Quantizing, 449
Quantizing magnetic eld, 325, 352, 457, 482,
483
Quantum box (QB), 193, 229, 332, 349
Quantum conned super-lattices, 486
Quantum connement, 124
Quantum dot, 278
Quantum dot super-lattices, 273
Quantum number, 26, 56, 57, 410
Quantum resistors, 139
Quantum size effect, 3, 390
Quantum well (QW), 36, 1820, 22, 25, 29,
43, 45, 47, 52, 65, 73, 80, 86, 90, 94,
103, 107116, 123, 124, 139, 158, 193,
236, 241, 252, 258, 260, 327, 328, 333,
341, 351, 389, 467, 476
Quantum well heavily doped, 266
Quantum wire, 139
Quantum wire effective mass superlattices, 392
Quantum-conned lasers, 376
Quaternary, 4, 404, 449, 464
QW HD, 281
QW of HD, 100
R
Raman gain, 377
Real, 40
Reduced effective mass, 298
Resonant PL, 386
Respectively, 175, 183, 330
Subject Index
S
Sample length, 452
Second and third order elastic constants for
HDS, 371
Semiconductor nanotubes, 348
Semimetals, 400
Shubnikov-de Haas oscillations, 404
Silicon atomic environments, 382
Simplied dispersion relation, 253
Single deep open research problem, 371
Single unit cell, 297
Size quantization, 21, 95, 96
Size-quantized, 83, 236
Size quantum number, 70, 140
Sommerfelds lemma, 19
Specimens, 39
Spectrum, 4
Spin, 298300, 317319, 409, 438
Spin down Landau levels, 377
Split-off hole, 412
Splitting, 14
Spontaneous emission intensity, 380
Stained Layer Superlattices, 444
Static photoelectric effect, 398
Stillman, 39, 223
Strain, 399
Strained Layer, 279
Strained multiple quantum wells (MQWs), 378
Stress, 75, 404
Stressed Kane type semiconductors, 65, 72, 423
Stressed materials, 71
Strong electric eld, 468
Sub-band, 18, 26, 31, 202, 211, 213, 274, 276,
277
Sub-band energy, 18, 21, 25, 26, 29, 31, 34, 37,
38, 41, 42, 70, 72, 79, 83, 105, 106,
141, 144, 149, 156159, 163, 171,
318320, 329
Superlattices HD, 392
Superlattice (SL), 241, 242, 256, 388
Surface electron, 20
Surface electron concentration, 63, 78, 88
T
Ternary, 404, 449, 464
Tetragonal, 18, 449, 451, 464
Thermoelectric power, 315, 372, 404
Thin GaAs and AlAs layers, 388
Third order nonlinear optical susceptibility, 377
Thomas-Fermi screening, 45
Subject Index
Three band model of Kane, 142, 196, 223, 472
Total DOS function, 78
Total density-of-states function, 195
Totally quantized energy, 197
Total photo-emitted current density, 208
Totally quantized energy, 202, 206
Transition point, 433
Transport properties of nano-devices, 467
Transverse, 7, 43, 248
Two band model of Kane, 144, 199
Two-photon ionization, 391
U
Ultrafast, 5
Ultrathin lms, 18
Uniqueness conditions, 191, 315, 438
V
Vector, 299
495
Vector potential, 295, 296, 450
Velocity, 19
Velocity of light, 307
W
Wave-vector, 3
Wave vector space, 53
Wedge shaped, 349
Wide band gap, 308
X
X-Y plane, 26
Z
Z direction, 33, 41, 218, 254, 480
Zero thickness, 242
Zerogap materials, 226

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Springer Tracts in Modern Physics 262

Kamakhya Prasad Ghatak

Springer Tracts in Modern Physics

Springer Tracts in Modern Physics

Condensed Matter Physics

More information about this series at http://www.springer.com/series/426

Kamakhya Prasad Ghatak

Kamakhya Prasad Ghatak

ISSN 1615-0430 (electronic)

Library of Congress Control Number: 2014953237

Professors P.T. Landsberg, P.N. Butcher,

materials as an extension of the new dispersion relations of the bulk HD materials

I am grateful to A.N. Chakravarti, my thesis advisor and an ardent advocator of the

Kamakhya Prasad Ghatak

Inuence of Quantum Connement on the EP

The EP from Quantum Wells (QWs) of Heavily Doped (HD)

The EP from Nano Wires of HD II-VI

The EP from Quantum Box of Heavily Doped (HD)

The EP from Heavily Doped (HD) Quantized Superlattices. .

The Magneto EP from IV-VI Quantum Well HD

The EP from HD III-V Semiconductors

The EP from HD Kane Type Semiconductors . . . . . . . . . . .

The EP from HD Kane Type Materials Under Magnetic

The EP from QWs, NWs and QBs of HD Optoelectronic

The EP from HD Effective Mass Super Lattices

The EP from HD QB Effective

Few Related Applications and Brief Review

10 Conclusion and Future Research . . . . . . . . . . . . . . . . . . . . . . . . .

11 Appendix A: The EP from HDS Under Magnetic

11.2.11 The EP from HD Gallium Antimonide

12 Appendix B: The EP from Super-Lattices of HD

13 Appendix C: The EP from HDS and Their Nano-structures

13.2 Theoretical Background . . . . . . . . . . . . . . . . . . . . . . . . . .

14 Appendix D: The EP from HD III-V, Ternary

About the Author

About the Author

Band nonparabolicity parameter

Permittivity of free space

Total electron concentration

The EP from Quantum Wells (QWs)

1 The EP from Quantum Wells (QWs)

1 The EP from Quantum Wells (QWs)

1.2 Theoretical Background

1.2 Theoretical Background

2 ab D2k D2? =

1 The EP from Quantum Wells (QWs)

E VFVdV D2k D2?

The (1.5) can be rewritten as [125128]

1.2 Theoretical Background

Substituting E V x and x=gg t0 , we get from (1.7)

where, Erf E=gg is the error function of E=gg .

After computing this simple integration, one obtains

From (1.10), we can write

1 The EP from Quantum Wells (QWs)

Thus (1.14) can be expressed as

It is well known that [129, 130]

1.2 Theoretical Background

We also know that [129, 130]

Therefore, one can write

1 The EP from Quantum Wells (QWs)

2 ab D2k D2? =

LrT1D EF1HD ; gg ; nz ; EF1HD is the Fermi energy

R21 E0 ; gg cos#21 E0 ; gg fE

m EFs mc fI11 EFs g0

2akB TF0 gn1