Scribd Logo
Upload

Welcome to Scribd!

  • 362 views

    8N80

    Uploaded by

    niainaeloi_842256206
    datasheet

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    8N80

    Uploaded by

    niainaeloi_842256206
    362 views7 pages
    datasheet

    Copyright

    © © All Rights Reserved

    Available Formats

    PDF, TXT or read online from Scribd

    Did you find this document useful?

    Is this content inappropriate?

    datasheet

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    362 views7 pages

    8N80

    Uploaded by

    niainaeloi_842256206
    datasheet

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 7

    UNISONIC TECHNOLOGIES CO.

    , LTD
    8N80

    Power MOSFET

    8A, 800V N-CHANNEL


    POWER MOSFET

    DESCRIPTION

    The UTC 8N80 is an N-channel mode power MOSFET, it uses


    UTCs advanced technology to provide costumers planar stripe and
    DMOS technology. This technology allows a minimum on-state
    resistance, superior switching performance. It also can withstand high
    energy pulse in the avalanche and commutation mode.
    The UTC 8N80 is generally applied in high efficiency switch mode
    power supplies.

    FEATURES

    * Typically 35 nC Low Gate Charge


    * RDS(ON) = 1.45 @VGS = 10V
    * Typically 13 pF Low CRSS
    * Improved dv/dt Capability
    * Fast Switching Speed
    * 100% Avalanche Tested
    * RoHSCompliant Product

    SYMBOL
    2.Drain

    1.Gate

    3.Source

    ORDERING INFORMATION

    Ordering Number
    Lead Free
    Halogen Free
    8N80L-TA3-T
    8N80G-TA3-T
    8N80L-TF3-T
    8N80G-TF3-T
    8N80L-TF1-T
    8N80G-TF1-T
    8N80L-TF2-T
    8N80G-TF2-T
    Note: Pin Assignment: G: GND, D: Drain, S: Source

    www.unisonic.com.tw
    Copyright 2013 Unisonic Technologies Co., Ltd

    Package
    TO-220
    TO-220F
    TO-220F1
    TO-220F2

    Pin Assignment
    1
    2
    3
    G
    D
    S
    G
    D
    S
    G
    D
    S
    G
    D
    S

    Packing
    Tube
    Tube
    Tube
    Tube

    1 of 7
    QW-R502-471.I

    8N80

    Power MOSFET

    ABSOLUTE MAXIMUM RATINGS (TC=25C, unless otherwise specified)

    PARAMETER
    SYMBOL
    RATINGS
    UNIT
    Drain-Source Voltage
    VDSS
    800
    V
    Gate-Source Voltage
    VGSS
    30
    V
    Drain Current (Continuous) (TC=25C)
    ID
    8
    A
    Drain Current (Pulsed) (Note 1)
    IDM
    32
    A
    Avalanche Current (Note 1)
    IAR
    8
    A
    Single Pulse Avalanche Energy (Note 2)
    EAS
    850
    mJ
    Repetitive Avalanche Energy (Note 1)
    EAR
    17.8
    mJ
    Peak Diode Recovery dv/dt (Note 3)
    dv/dt
    4.5
    V/ns
    TO-220
    178
    Power Dissipation
    TO-220F/TO-220F1
    59
    W
    TO-220F2
    62
    PD
    TO-220
    1.43
    Linear Derating Factor above
    TO-220F/TO-220F1
    0.47
    W/C
    TC=25C
    TO-220F2
    0.5
    Junction Temperature
    TJ
    +150
    C
    Storage Temperature
    TSTG
    -55 ~ +150
    C
    Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature
    2. L = 25mH, IAS = 8A, VDD = 50V, RG = 25 , Starting TJ = 25C
    3. ISD 8A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C
    4. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
    Absolute maximum ratings are stress ratings only and functional device operation is not implied

    THERMAL DATA
    PARAMETER

    SYMBOL
    JA

    Junction to Ambient
    Junction to Case

    TO-220
    TO-220F/TO-220F1
    TO-220F2

    UNISONIC TECHNOLOGIES CO., LTD


    www.unisonic.com.tw

    JC

    RATINGS
    62.5
    0.7
    2.1
    2.0

    UNIT
    C/W
    C/W

    2 of 7
    QW-R502-471.I

    8N80

    Power MOSFET

    ELECTRICAL CHARACTERISTICS (TC=25C, unless otherwise specified)

    PARAMETER
    SYMBOL
    TEST CONDITIONS
    OFF CHARACTERISTICS
    Drain-Source Breakdown Voltage
    BVDSS
    ID=250A, VGS=0V
    Breakdown Voltage Temperature Coefficient BVDSS/TJ Reference to 25C, ID=250A
    VDS=800V, VGS=0V
    Drain-Source Leakage Current
    IDSS
    VDS=640V, TC=125C
    Gate- Source Leakage Current
    IGSS
    VGS=30V, VDS=0V
    ON CHARACTERISTICS
    Gate Threshold Voltage
    VGS(TH)
    VDS=VGS, ID=250A
    Static Drain-Source On-State Resistance
    RDS(ON)
    VGS=10V, ID=4A
    Forward Transconductance (Note 1)
    gFS
    VDS=50V, ID=4A
    DYNAMIC PARAMETERS
    Input Capacitance
    CISS
    VGS=0V, VDS=25V,
    Output Capacitance
    COSS
    f=1.0MHz
    Reverse Transfer Capacitance
    CRSS
    SWITCHING PARAMETERS (Note 1, Note 2)
    Total Gate Charge
    QG
    VGS=10V, VDS=640V,
    Gate to Source Charge
    QGS
    ID=8A
    Gate to Drain Charge
    QGD
    Turn-ON Delay Time
    tD(ON)
    Rise Time
    tR
    VDD=400V, ID=8A,
    RG=25
    Turn-OFF Delay Time
    tD(OFF)
    Fall-Time
    tF
    SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
    Maximum Continuous Drain-Source Diode
    IS
    Forward Current
    Maximum Pulsed Drain-Source Diode
    ISM
    Forward Current
    Drain-Source Diode Forward Voltage
    VSD
    IS=8A, VGS=0V
    Reverse Recovery Time (Note 1)
    trr
    IS=8A, VGS=0V,
    dIF/dt=100A/s
    Reverse Recovery Charge (Note 1)
    QRR
    Note: 1. Pulse Test: Pulse width 300s, Duty cycle 2%
    2. Essentially independent of operating temperature

    UNISONIC TECHNOLOGIES CO., LTD


    www.unisonic.com.tw

    MIN

    TYP MAX UNIT

    800

    V
    V/C

    0.5
    10
    100
    100
    3.0

    A
    nA

    5.0
    1.18 1.45
    5.6

    1580 2050
    135 175
    13
    17

    pF
    pF
    pF

    35
    10
    14
    40
    110
    65
    70

    90
    230
    140
    150

    nC
    nC
    nC
    ns
    ns
    ns
    ns

    32

    1.4

    V
    ns
    C

    690
    8.2

    45

    3 of 7
    QW-R502-471.I

    8N80

    Power MOSFET

    TEST CIRCUITS AND WAVEFORMS

    DUT

    VDS

    RG

    L
    ISD
    VGS

    VDD
    Driver
    Same Type
    as DUT

    dv/dt controlled by RG
    ISD controlled by pulse period
    Peak Diode Recovery dv/dt Test Circuit & Waveforms

    VGS
    (Driver
    )

    D=

    Gate Pulse Width


    Gate Pulse Period

    10V

    IFM, Body Diode Forward Current


    ISD
    (DUT)

    di/dt
    IRM
    Body Diode Reverse Current

    VDS
    (DUT)

    Body Diode Recovery dv/dt

    VSD

    VDD

    Body Diode Forward


    Voltage Drop

    UNISONIC TECHNOLOGIES CO., LTD


    www.unisonic.com.tw

    4 of 7
    QW-R502-471.I

    8N80

    Power MOSFET

    TEST CIRCUITS AND WAVEFORMS(Cont.)

    VGS

    Same Type
    as DUT
    12V

    QG

    10V

    200nF
    50k

    VDS

    300nF

    QGS

    QGD

    VGS
    DUT
    3mA
    Charge
    Gate Charge Test Circuit

    Gate Charge Waveforms

    Resistive Switching Test Circuit

    Resistive Switching Waveforms

    2
    EAS= 1
    2 LIAS

    VDS
    RG

    BVDSS
    BVDSS-VDD

    BVDSS

    ID

    IAS

    10V

    ID(t)
    DUT

    tP

    VDD

    VDD

    VDS(t)

    tP

    Unclamped Inductive Switching Test Circuit

    UNISONIC TECHNOLOGIES CO., LTD


    www.unisonic.com.tw

    Time

    Unclamped Inductive Switching Waveforms

    5 of 7
    QW-R502-471.I

    8N80

    Power MOSFET

    Drain Current,ID (A)

    Drain Current,ID (A)

    Drain Current,ID (A)

    Drain Current, ID (A)

    TYPICAL CHARACTERISTICS

    UNISONIC TECHNOLOGIES CO., LTD


    www.unisonic.com.tw

    6 of 7
    QW-R502-471.I

    8N80

    Power MOSFET

    UTC assumes no responsibility for equipment failures that result from using products at values that
    exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
    other parameters) listed in products specifications of any and all UTC products described or contained
    herein. UTC products are not designed for use in life support appliances, devices or systems where
    malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
    whole or in part is prohibited without the prior written consent of the copyright owner. The information
    presented in this document does not form part of any quotation or contract, is believed to be accurate
    and reliable and may be changed without notice.

    UNISONIC TECHNOLOGIES CO., LTD


    www.unisonic.com.tw

    7 of 7
    QW-R502-471.I

    You might also like