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IRF540

N-CHANNEL 100V - 0.055 - 22A TO-220


LOW GATE CHARGE STripFET II POWER MOSFET
TYPE
IRF540

VDSS

RDS(on)

ID

100 V

<0.077

22 A

TYPICAL RDS(on) = 0.055


EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
LOW GATE CHARGE
APPLICATION ORIENTED
CHARACTERIZATION

3
1

TO-220

DESCRIPTION
This MOSFET series realized with STMicroelectronics
unique STripFET process has specifically been designed
to minimize input capacitance and gate charge. It is
therefore suitable as primary switch in advanced highefficiency, high-frequency isolated DC-DC converters for
Telecom and Computer applications. It is also intended
for any applications with low gate drive requirements.

APPLICATIONS
HIGH-EFFICIENCY DC-DC CONVERTERS
UPS AND MOTOR CONTROL

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Ordering Information
SALES TYPE

IRF540

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INTERNAL SCHEMATIC DIAGRAM

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MARKING

PACKAGE

IRF540&

TO-220

PACKAGING
TUBE

ABSOLUTE MAXIMUM RATINGS


Symbol
VDS
VDGR
VGS
ID
ID
IDM()
Ptot

Parameter
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 k)
Gate- source Voltage
Drain Current (continuous) at TC = 25C
Drain Current (continuous) at TC = 100C
Drain Current (pulsed)
Total Dissipation at TC = 25C
Derating Factor
Peak Diode Recovery voltage slope
Single Pulse Avalanche Energy
Storage Temperature
Max. Operating Junction Temperature

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dv/dt (1)
EAS (2)
Tstg
Tj

() Pulse width limited by safe operating area.

Value
100
100
20
22
15
88
85
0.57
9
220

Unit
V
V
V
A
A
A
W
W/C
V/ns
mJ

-55 to 175

1) ISD 22A, di/dt 300A/s, VDD V (BR)DSS, T j T JMAX


(2) Starting T j = 25 oC, ID = 12A, VDD = 30V

February 2003
NEW DATASHEET ACCORDING TO PCN DSG/CT/1C16 MARKING: IRF540 &

1/8

IRF540
THERMAL DATA
Rthj-case
Rthj-amb
Tl

Thermal Resistance Junction-case


Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose

Max
Max
Typ

1.76
62.5
300

C/W
C/W
C

ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified)


OFF
Symbol

Parameter

Test Conditions

Min.

Drain-source
Breakdown Voltage

ID = 250 A, VGS = 0

IDSS

Zero Gate Voltage


Drain Current (VGS = 0)

VDS = Max Rating


VDS = Max Rating TC = 125C

IGSS

Gate-body Leakage
Current (VDS = 0)

VGS = 20V

V(BR)DSS

Typ.

Max.

100

V
1
10

A
A

100

nA

ON (1)
Symbol

Parameter

Test Conditions

VGS(th)

Gate Threshold Voltage

VDS = VGS

RDS(on)

Static Drain-source On
Resistance

VGS = 10 V

ID = 250 A

Symbol

Parameter

Test Conditions
VDS =25 V

Ciss
Coss
Crss

Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance

VDS = 25V, f = 1 MHz, VGS = 0

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Forward Transconductance

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Typ.

Max.

Unit

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gfs (*)

ID = 11 A

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Min.

ID = 11 A

DYNAMIC

Unit

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0.055

0.077

Typ.

Max.

Unit

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Min.

20

870
125
52

pF
pF
pF

IRF540
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

td(on)
tr

Turn-on Delay Time


Rise Time

ID = 12 A
VDD = 50 V
RG = 4.7
VGS = 10 V
(Resistive Load, Figure 3)

60
45

Qg
Qgs
Qgd

Total Gate Charge


Gate-Source Charge
Gate-Drain Charge

VDD= 80 V ID= 22 A VGS= 10V

30
6
10

41

nC
nC
nC

Typ.

Max.

Unit

ns
ns

SWITCHING OFF
Symbol
td(off)
tf

Parameter

Test Conditions

Min.

ID = 12 A
VDD = 50 V
RG = 4.7,
VGS = 10 V
(Resistive Load, Figure 3)

Turn-off Delay Time


Fall Time

50
20

SOURCE DRAIN DIODE

ns
ns

Symbol

Parameter

ISD
ISDM ()

Source-drain Current
Source-drain Current (pulsed)

VSD (*)

Forward On Voltage

ISD = 22 A

Reverse Recovery Time


Reverse Recovery Charge
Reverse Recovery Current

di/dt = 100A/s
ISD = 22 A
VDD = 30 V
Tj = 150C
(see test circuit, Figure 5)

trr
Qrr
IRRM

Test Conditions

(*)Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.


()Pulse width limited by safe operating area.

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Safe Operating Area

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Min.

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VGS = 0

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uc

Typ.

od
100
375
7.5

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Max.

Unit

22
88

A
A

1.3

V
ns
nC
A

Thermal Impedance

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3/8

IRF540
Output Characteristics

Transfer Characteristics

Transconductance

Static Drain-source On Resistance

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Gate Charge vs Gate-source Voltage

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Capacitance Variations

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IRF540
Normalized Gate Threshold Voltage vs Temperature

Normalized on Resistance vs Temperature

Source-drain Diode Forward Characteristics

Normalized Breakdown Voltage vs Temperature

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5/8

IRF540
Fig. 1: Unclamped Inductive Load Test Circuit

Fig. 2: Unclamped Inductive Waveform

Fig. 3: Switching Times Test Circuits For Resistive


Load

Fig. 4: Gate Charge test Circuit

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Fig. 5: Test Circuit For Inductive Load Switching


And Diode Recovery Times

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IRF540
TO-220 MECHANICAL DATA
mm.

DIM.

MIN.

TYP.

inch.
MAX.

MIN.

TYP.

TYP.

4.4

4.6

0.173

0.181

1.23

1.32

0.048

0.051

2.40

2.72

0.094

0.107

0.49

0.70

0.019

0.027

0.61

0.88

0.024

0.034

F1

1.14

1.70

0.044

0.067

F2

1.14

1.70

0.044

0.067

4.95

5.15

0.194

0.203

G1

2.40

2.70

0.094

0.106

H2

10

10.40

0.393

0.409

L2

16.40

0.645

L3

28.90

1.137

L4

13

14

0.511

L5

2.65

2.95

0.104

L6

15.25

15.75

0.600

L7

6.20

6.60

0.244

L9

3.50

3.93

0.137

DIA

3.75

3.85

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0.147

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0.551
0.116
0.620
0.260
0.154
0.151

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7/8

IRF540

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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

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The ST logo is registered trademark of STMicroelectronics


2003 STMicroelectronics - All Rights Reserved
All other names are the property of their respective owners.
STMicroelectronics GROUP OF COMPANIES
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