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VDSS
RDS(on)
ID
100 V
<0.077
22 A
3
1
TO-220
DESCRIPTION
This MOSFET series realized with STMicroelectronics
unique STripFET process has specifically been designed
to minimize input capacitance and gate charge. It is
therefore suitable as primary switch in advanced highefficiency, high-frequency isolated DC-DC converters for
Telecom and Computer applications. It is also intended
for any applications with low gate drive requirements.
APPLICATIONS
HIGH-EFFICIENCY DC-DC CONVERTERS
UPS AND MOTOR CONTROL
)
s
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Ordering Information
SALES TYPE
IRF540
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-
MARKING
PACKAGE
IRF540&
TO-220
PACKAGING
TUBE
Parameter
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 k)
Gate- source Voltage
Drain Current (continuous) at TC = 25C
Drain Current (continuous) at TC = 100C
Drain Current (pulsed)
Total Dissipation at TC = 25C
Derating Factor
Peak Diode Recovery voltage slope
Single Pulse Avalanche Energy
Storage Temperature
Max. Operating Junction Temperature
t
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dv/dt (1)
EAS (2)
Tstg
Tj
Value
100
100
20
22
15
88
85
0.57
9
220
Unit
V
V
V
A
A
A
W
W/C
V/ns
mJ
-55 to 175
February 2003
NEW DATASHEET ACCORDING TO PCN DSG/CT/1C16 MARKING: IRF540 &
1/8
IRF540
THERMAL DATA
Rthj-case
Rthj-amb
Tl
Max
Max
Typ
1.76
62.5
300
C/W
C/W
C
Parameter
Test Conditions
Min.
Drain-source
Breakdown Voltage
ID = 250 A, VGS = 0
IDSS
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = 20V
V(BR)DSS
Typ.
Max.
100
V
1
10
A
A
100
nA
ON (1)
Symbol
Parameter
Test Conditions
VGS(th)
VDS = VGS
RDS(on)
Static Drain-source On
Resistance
VGS = 10 V
ID = 250 A
Symbol
Parameter
Test Conditions
VDS =25 V
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
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2/8
o
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Forward Transconductance
)
s
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Typ.
Max.
Unit
e
t
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gfs (*)
ID = 11 A
)
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Min.
ID = 11 A
DYNAMIC
Unit
c
u
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0.055
0.077
Typ.
Max.
Unit
o
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Min.
20
870
125
52
pF
pF
pF
IRF540
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
ID = 12 A
VDD = 50 V
RG = 4.7
VGS = 10 V
(Resistive Load, Figure 3)
60
45
Qg
Qgs
Qgd
30
6
10
41
nC
nC
nC
Typ.
Max.
Unit
ns
ns
SWITCHING OFF
Symbol
td(off)
tf
Parameter
Test Conditions
Min.
ID = 12 A
VDD = 50 V
RG = 4.7,
VGS = 10 V
(Resistive Load, Figure 3)
50
20
ns
ns
Symbol
Parameter
ISD
ISDM ()
Source-drain Current
Source-drain Current (pulsed)
VSD (*)
Forward On Voltage
ISD = 22 A
di/dt = 100A/s
ISD = 22 A
VDD = 30 V
Tj = 150C
(see test circuit, Figure 5)
trr
Qrr
IRRM
Test Conditions
)
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Min.
r
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VGS = 0
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uc
Typ.
od
100
375
7.5
)
s
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Max.
Unit
22
88
A
A
1.3
V
ns
nC
A
Thermal Impedance
t
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3/8
IRF540
Output Characteristics
Transfer Characteristics
Transconductance
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Capacitance Variations
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IRF540
Normalized Gate Threshold Voltage vs Temperature
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5/8
IRF540
Fig. 1: Unclamped Inductive Load Test Circuit
c
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IRF540
TO-220 MECHANICAL DATA
mm.
DIM.
MIN.
TYP.
inch.
MAX.
MIN.
TYP.
TYP.
4.4
4.6
0.173
0.181
1.23
1.32
0.048
0.051
2.40
2.72
0.094
0.107
0.49
0.70
0.019
0.027
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
4.95
5.15
0.194
0.203
G1
2.40
2.70
0.094
0.106
H2
10
10.40
0.393
0.409
L2
16.40
0.645
L3
28.90
1.137
L4
13
14
0.511
L5
2.65
2.95
0.104
L6
15.25
15.75
0.600
L7
6.20
6.60
0.244
L9
3.50
3.93
0.137
DIA
3.75
3.85
)
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ct
so
e
t
le
0.147
o
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P
c
u
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)
s
t(
0.551
0.116
0.620
0.260
0.154
0.151
b
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-
u
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t
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7/8
IRF540
c
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)
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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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