IRF530, SiHF530

Vishay Siliconix

Power MOSFET
FEATURES

PRODUCT SUMMARY
VDS (V)

100

RDS(on) ()

VGS = 10 V

0.16

Qg (Max.) (nC)

26

Qgs (nC)

5.5

Qgd (nC)

11

Configuration

Single

Dynamic dV/dt Rating

Repetitive Avalanche Rated
175 C Operating Temperature
Fast Switching
Ease of Paralleling
Simple Drive Requirements
Compliant to RoHS Directive 2002/95/EC

Available

RoHS*
COMPLIANT

DESCRIPTION

TO-220AB

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.

S
S
N-Channel MOSFET

ORDERING INFORMATION
Package

TO-220AB
IRF530PbF
SiHF530-E3
IRF530
SiHF530

Lead (Pb)-free
SnPb

ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

Drain-Source Voltage

VDS

100

Gate-Source Voltage

VGS

20

Continuous Drain Current

VGS at 10 V

TC = 25 C
TC = 100 C

Pulsed Drain Currenta

ID
IDM

Linear Derating Factor

Single Pulse Avalanche Energyb

EAS

UNIT
V

14
10

56
0.59

W/C

69

mJ

Currenta

IAR

14

Repetitive Avalanche Energya

EAR

8.8

mJ

Repetitive Avalanche

Maximum Power Dissipation

TC = 25 C

Peak Diode Recovery dV/dtc

Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque

for 10 s
6-32 or M3 screw

PD

88

dV/dt

5.5

V/ns

TJ, Tstg

- 55 to + 175
300d

10

lbf in

1.1

Nm

Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, starting TJ = 25 C, L = 528 H, Rg = 25 , IAS = 14 A (see fig. 12).
c. ISD 14 A, dI/dt 140 A/s, VDD VDS, TJ 175 C.
d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91019
S11-0510-Rev. B, 21-Mar-11

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This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF530, SiHF530
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER

SYMBOL

TYP.

MAX.

Maximum Junction-to-Ambient

RthJA

62

Case-to-Sink, Flat, Greased Surface

RthCS

0.50

Maximum Junction-to-Case (Drain)

RthJC

1.7

UNIT

C/W

SPECIFICATIONS (TJ = 25 C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient

VDS

VGS = 0 V, ID = 250 A

100

VDS/TJ

Reference to 25 C, ID = 1 mA

0.12

V/C

VGS(th)

VDS = VGS, ID = 250 A

2.0

4.0

Gate-Source Leakage

IGSS

VGS = 20 V

100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = 100 V, VGS = 0 V

25

VDS = 80 V, VGS = 0 V, TJ = 150 C

250

Gate-Source Threshold Voltage

0.16

gfs

VDS = 50 V, ID = 8.4 Ab

5.1

Input Capacitance

Ciss

VGS = 0 V,

670

Output Capacitance

Coss

VDS = 25 V,

250

Reverse Transfer Capacitance

Crss

f = 1.0 MHz, see fig. 5

60

Total Gate Charge

Qg

26

Gate-Source Charge

Qgs

5.5

Drain-Source On-State Resistance

Forward Transconductance

RDS(on)

ID = 8.4 Ab

VGS = 10 V

Dynamic

VGS = 10 V

ID = 14 A, VDS = 80 V,
see fig. 6 and 13b

pF

nC

Gate-Drain Charge

Qgd

11

Turn-On Delay Time

td(on)

10

34

23

24

4.5

7.5

14

56

2.5

150

280

ns

0.85

1.7

Rise Time
Turn-Off Delay Time

tr
td(off)

Fall Time

tf

Internal Drain Inductance

LD

Internal Source Inductance

LS

VDD = 50 V, ID = 14 A
Rg = 12 , RD = 3.6, see fig. 10b

Between lead,
6 mm (0.25") from
package and center of
die contact

ns

nH

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

IS

Pulsed Diode Forward Currenta

ISM

Body Diode Voltage

VSD

Body Diode Reverse Recovery Time

trr

Body Diode Reverse Recovery Charge

Qrr

Forward Turn-On Time

ton

MOSFET symbol
showing the
integral reverse
p - n junction diode

TJ = 25 C, IS = 14 A, VGS = 0 Vb
TJ = 25 C, IF = 14 A, dI/dt = 100 A/sb

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 s; duty cycle 2 %.

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Document Number: 91019

S11-0510-Rev. B, 21-Mar-11

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF530, SiHF530
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 C, unless otherwise noted)

VGS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom 4.5 V

101

25 C

4.5 V

ID, Drain Current (A)

ID, Drain Current (A)

Top

175 C

101

100

100
20 s Pulse Width
TC = 25 C
10-1

100

101

VDS, Drain-to-Source Voltage (V)

91019_01

20 s Pulse Width
VDS = 50 V

4.5 V

100
20 s Pulse Width
TC = 175 C
10-1

91019_02

100

101

VDS, Drain-to-Source Voltage (V)

Fig. 2 - Typical Output Characteristics, TC = 175 C

Document Number: 91019

S11-0510-Rev. B, 21-Mar-11

RDS(on), Drain-to-Source On Resistance

(Normalized)

ID, Drain Current (A)

101

10

Fig. 3 - Typical Transfer Characteristics

Fig. 1 - Typical Output Characteristics, TC = 25 C

VGS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom 4.5 V

VGS, Gate-to-Source Voltage (V)

91019_03

Top

91019_04

3.5
3.0

ID = 14 A
VGS = 10 V

2.5
2.0
1.5
1.0
0.5
0.0
- 60- 40 - 20 0

20 40 60 80 100 120 140 160 180

TJ, Junction Temperature (C)

Fig. 4 - Normalized On-Resistance vs. Temperature

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This datasheet is subject to change without notice.

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IRF530, SiHF530

1400

VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted
Crss = Cgd
Coss = Cds + Cgd

Capacitance (pF)

1200
1000

Ciss

800
600

Coss

400
Crss

200

ISD, Reverse Drain Current (A)

Vishay Siliconix

175 C

101

25 C

100
VGS = 0 V

0
100

101

0.4

VDS, Drain-to-Source Voltage (V)

91019_05

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

VDS = 80 V

16

Operation in this area limited

by RDS(on)

VDS = 50 V
VDS = 20 V

102
5

10 s

100 s

10

1 ms

10 ms

1
5

For test circuit

see figure 13

0
0
91019_06

10

15

20

QG, Total Gate Charge (nC)

TC = 25 C
TJ = 175 C
Single Pulse

0.1
0.1

25

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

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2.0

1.6

103

ID = 14 A

12

1.2

Fig. 7 - Typical Source-Drain Diode Forward Voltage

ID, Drain Current (A)

VGS, Gate-to-Source Voltage (V)

20

0.8

VSD, Source-to-Drain Voltage (V)

91019_07

91019_08

10

102

103

VDS, Drain-to-Source Voltage (V)

Fig. 8 - Maximum Safe Operating Area

Document Number: 91019

S11-0510-Rev. B, 21-Mar-11

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF530, SiHF530
Vishay Siliconix

RD

VDS
VGS

14

ID, Drain Current (A)

D.U.T.

RG

12
10

+
- VDD
10 V

Pulse width 1 s
Duty factor 0.1 %

8
6

Fig. 10a - Switching Time Test Circuit

4
2

VDS
90 %

0
25

50

75

100

125

150

175

TC, Case Temperature (C)

91019_09

10 %
VGS
td(on)

Fig. 9 - Maximum Drain Current vs. Case Temperature

td(off) tf

tr

Fig. 10b - Switching Time Waveforms

Thermal Response (ZthJC)

10

0 - 0.5
0.2

PDM

0.1
0.1

0.05

t1

0.02
0.01

t2

Single Pulse
(Thermal Response)

Notes:
1. Duty Factor, D = t1/t2
2. Peak Tj = PDM x ZthJC + TC

10-2
10-5
91019_11

10-4

10-3

10-2

0.1

10

t1, Rectangular Pulse Duration (s)

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

Document Number: 91019

S11-0510-Rev. B, 21-Mar-11

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5

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF530, SiHF530
Vishay Siliconix

L
Vary tp to obtain
required IAS

VDS

VDS

tp
VDD
D.U.T

RG

+
-

IAS

V DD

VDS

10 V
0.01

tp

IAS
Fig. 12a - Unclamped Inductive Test Circuit

Fig. 12b - Unclamped Inductive Waveforms

EAS, Single Pulse Energy (mJ)

200

ID
5.7 A
9.9 A
Bottom 14 A
Top

160

120

80

40

VDD = 25 V
25

91019_12c

50

75

100

125

175

150

Starting TJ, Junction Temperature (C)

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

Current regulator
Same type as D.U.T.
50 k

QG

10 V

12 V

0.2 F
0.3 F

QGS

QGD

D.U.T.

VG

VDS

VGS
3 mA

Charge
IG
ID
Current sampling resistors

Fig. 13a - Basic Gate Charge Waveform

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Fig. 13b - Gate Charge Test Circuit

Document Number: 91019

S11-0510-Rev. B, 21-Mar-11

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF530, SiHF530
Vishay Siliconix

Peak Diode Recovery dV/dt Test Circuit

+

D.U.T.

Circuit layout considerations

Low stray inductance
Ground plane
Low leakage inductance
current transformer

Rg

dV/dt controlled by Rg
Driver same type as D.U.T.
ISD controlled by duty factor D
D.U.T. - device under test

+
-

VDD

Driver gate drive

P.W.

Period

D=

P.W.
Period
VGS = 10 Va

D.U.T. lSD waveform

Reverse
recovery
current

Body diode forward

current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt

Re-applied
voltage
Inductor current

VDD

Body diode forward drop

Ripple 5 %

ISD

Note
a. VGS = 5 V for logic level devices

Fig. 14 - For N-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91019.

Document Number: 91019

S11-0510-Rev. B, 21-Mar-11

www.vishay.com
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This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Package Information
www.vishay.com

Vishay Siliconix

TO-220-1
A

DIM.

Q
H(1)
D

L(1)

M*

b(1)

INCHES

MIN.

MAX.

MIN.

MAX.

4.24

4.65

0.167

0.183

0.69

1.02

0.027

0.040

b(1)

1.14

1.78

0.045

0.070

F
P

MILLIMETERS

0.36

0.61

0.014

0.024

14.33

15.85

0.564

0.624

9.96

10.52

0.392

0.414

2.41

2.67

0.095

0.105

e(1)

4.88

5.28

0.192

0.208

1.14

1.40

0.045

0.055

H(1)

6.10

6.71

0.240

0.264
0.115

J(1)

2.41

2.92

0.095

13.36

14.40

0.526

0.567

L(1)

3.33

4.04

0.131

0.159

3.53

3.94

0.139

0.155

2.54

3.00

0.100

0.118

ECN: X15-0364-Rev. C, 14-Dec-15

DWG: 6031
Note
M* = 0.052 inches to 0.064 inches (dimension including
protrusion), heatsink hole for HVM
C

b
e
J(1)
e(1)

Package Picture
ASE

Revison: 14-Dec-15

Xian

Document Number: 66542

1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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Vishay

Disclaimer

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Revision: 13-Jun-16

Document Number: 91000