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    NTE24 (NPN) & NTE25 (PNP) Silicon Complementary Transistors General Purpose Amplifier, Switch

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    The document describes NTE24 and NTE25 silicon complementary transistors intended for use in general purpose amplifier and switching circuits requiring up to 1A of collector current. The transistors have a high collector-emitter breakdown voltage of 80V and can dissipate up to 2W of power. Electrical characteristics including current gain, saturation voltage, and cutoff currents are provided.

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    NTE24 (NPN) & NTE25 (PNP) Silicon Complementary Transistors General Purpose Amplifier, Switch

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    The document describes NTE24 and NTE25 silicon complementary transistors intended for use in general purpose amplifier and switching circuits requiring up to 1A of collector current. The transistors have a high collector-emitter breakdown voltage of 80V and can dissipate up to 2W of power. Electrical characteristics including current gain, saturation voltage, and cutoff currents are provided.

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    transistor tipo P

    Original Title

    nte24 npn

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    The document describes NTE24 and NTE25 silicon complementary transistors intended for use in general purpose amplifier and switching circuits requiring up to 1A of collector current. The transistors have a high collector-emitter breakdown voltage of 80V and can dissipate up to 2W of power. Electrical characteristics including current gain, saturation voltage, and cutoff currents are provided.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    26 views2 pages

    NTE24 (NPN) & NTE25 (PNP) Silicon Complementary Transistors General Purpose Amplifier, Switch

    Uploaded by

    の選択 ウィル
    The document describes NTE24 and NTE25 silicon complementary transistors intended for use in general purpose amplifier and switching circuits requiring up to 1A of collector current. The transistors have a high collector-emitter breakdown voltage of 80V and can dissipate up to 2W of power. Electrical characteristics including current gain, saturation voltage, and cutoff currents are provided.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
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    NTE24 (NPN) & NTE25 (PNP)

    Silicon Complementary Transistors


    General Purpose Amplifier, Switch
    Description:
    The NTE24 (NPN) and NTE25 (PNP) are complementary silicon transistors in a TO237 type package
    designed for general purpose medium power amplifier and switching circuits that require collector currents to 1A.
    Features:
    D High CollectorEmitter Breakdown Voltage: VCEO = 80V
    D Exceptional Power Dissipation Capability
    Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
    CollectorBase Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
    CollectorEmitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
    EmitterBase Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
    Collector Current, IC
    Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
    Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
    Power Dissipation, PD
    TA = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 850mW
    TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W
    Junction Temperature, TJ(max) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C
    Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C
    Thermal Resistance, JunctiontoCase, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50C/W
    Thermal Resistance, JunctiontoAmbient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 167C/W
    Electrical Characteristics: (TA = +25C unless otherwise specified)
    Parameter
    CollectorEmitter Breakdown Voltage

    Symbol

    Test Conditions

    V(BR)CEO IC = 10mA, IB = 0

    Min

    Typ

    Max

    Unit

    80

    Collector Cutoff Current

    ICBO

    VCB = 100V, IE = 0

    0.1

    Emitter Cutoff Current

    IEBO

    VEB = 5V, IC = 0

    100

    nA

    DC Current Gain

    hFE

    VCE = 2V, IC = 50mA

    40

    VCE = 2V, IC = 250mA

    40

    VCE = 2V, IC = 500mA

    25

    Electrical Characteristics (Contd): (TA = +25C unless otherwise specified)


    Parameter

    Symbol

    CollectorEmitter Saturation Voltage

    BaseEmitter ON Voltage

    VCE(sat)
    VBE(on)

    Current Gain Bandwidth Product

    fT

    Output Capacitance

    Cob

    Test Conditions

    Min

    Typ

    Max

    Unit

    IC = 500mA, IB = 50mA

    0.5

    IC = 1000mA, IB = 100mA

    1.5

    VCE = 2V, IC = 1000mA

    0.5

    VCE = 5V, IC = 200mA, f = 100MHz

    50

    MHz

    VCB = 10V, IE = 0, f = 1MHz

    30

    pF

    .200 (5.08)
    .180 (4.57)

    .100 (2.54)

    E C B

    .180
    (4.57)

    .594
    (15.09)

    .018 (0.46)

    .015 (0.38)
    3.050 (1.27)

    .050 (1.27)

    .050 (1.27)

    .140
    (3.55)

    .090 (2.28) R

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