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    NTE2353 Silicon NPN Transistor TV Horizontal Deflection Output /damper Diode

    Uploaded by

    Leonel Martinez
    This document contains specifications for an NPN silicon transistor intended for use in horizontal deflection output circuits in TVs. It has a high speed of 100 nanoseconds fall time, a high breakdown voltage of 1500V, and an on-chip damper diode. The transistor can handle continuous collector currents of 10A and peak currents of 30A, with a maximum collector dissipation of 70W. It has high current gain, low saturation voltages, and a forward voltage drop of less than 2V when the damper diode is forward biased.

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    © All Rights Reserved
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    NTE2353 Silicon NPN Transistor TV Horizontal Deflection Output /damper Diode

    Uploaded by

    Leonel Martinez
    16 views2 pages
    This document contains specifications for an NPN silicon transistor intended for use in horizontal deflection output circuits in TVs. It has a high speed of 100 nanoseconds fall time, a high breakdown voltage of 1500V, and an on-chip damper diode. The transistor can handle continuous collector currents of 10A and peak currents of 30A, with a maximum collector dissipation of 70W. It has high current gain, low saturation voltages, and a forward voltage drop of less than 2V when the damper diode is forward biased.

    Original Title

    Nte 2353

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    This document contains specifications for an NPN silicon transistor intended for use in horizontal deflection output circuits in TVs. It has a high speed of 100 nanoseconds fall time, a high breakdown voltage of 1500V, and an on-chip damper diode. The transistor can handle continuous collector currents of 10A and peak currents of 30A, with a maximum collector dissipation of 70W. It has high current gain, low saturation voltages, and a forward voltage drop of less than 2V when the damper diode is forward biased.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    16 views2 pages

    NTE2353 Silicon NPN Transistor TV Horizontal Deflection Output /damper Diode

    Uploaded by

    Leonel Martinez
    This document contains specifications for an NPN silicon transistor intended for use in horizontal deflection output circuits in TVs. It has a high speed of 100 nanoseconds fall time, a high breakdown voltage of 1500V, and an on-chip damper diode. The transistor can handle continuous collector currents of 10A and peak currents of 30A, with a maximum collector dissipation of 70W. It has high current gain, low saturation voltages, and a forward voltage drop of less than 2V when the damper diode is forward biased.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 2

    NTE2353

    Silicon NPN Transistor


    TV Horizontal Deflection Output
    w/Damper Diode
    Features:
    D High Speed: tf = 100nsec
    D High Breakdown Voltage: VCBO = 1500V
    D OnChip Damper Diode
    Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
    CollectorBase Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V
    CollectorEmitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
    EmitterBase Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
    Collector Current, IC
    Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
    Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A
    Collector Dissipation (TC = +25C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70W
    Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C
    Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C
    Electrical Characteristics: (TA = +25C unless otherwise specified)
    Parameter
    Collector Cutoff Current

    Collector Sustain Voltage


    Emitter Cutoff Current

    Symbol

    Test Conditions

    Min

    Typ

    Max Unit

    ICES

    VCE = 1500V

    1.0

    mA

    ICBO

    VCB = 800V

    10

    800

    40

    130

    mA

    VCEO(sus) IC = 100mA, IB = 0
    IEBO

    VEB = 4V

    Collector Emitter Saturation Voltage

    VCE(sat)

    IC = 8A, IB = 1.6A

    Base Emitter Saturation Voltage

    VBE(sat)

    IC = 8A, IB = 1.6A

    1.5

    hFE1

    VCE = 5V, IC = 1A

    hFE2

    VCE = 5V, IC = 8A

    10

    IEC = 10A

    2.0

    IC = 6A, IB1 = 1.2A, IB2 = 2.4A

    0.1

    0.3

    DC Current Gain

    Diode Forward Voltage


    FallTime

    VF
    tf

    .134 (3.4) Dia

    .221 (5.6)
    .123 (3.1)

    .630 (16.0)

    .315
    (8.0)
    .866
    (22.0)

    .158 (4.0)

    .804
    (20.4)

    .215 (5.45)

    .040 (1.0)

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