BUZ80A Datasheet - Eeworld.com - CN

BUZ80A
N - CHANNEL 800V - 2.5 - 3.8A - TO-220

FAST POWER MOS TRANSISTOR
TYPE
BUZ80A
V DSS
R DS(on)
ID
800 V
<3
3.8 A
TYPICAL RDS(on) = 2.5

30V GATE TO SOURCE VOLTAGE RATING
100% AVALANCHE TESTED
REPETITIVE AVALANCHE DATA AT 100oC
LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
REDUCED THRESHOLD VOLTAGE SPREAD
3
1
TO-220
APPLICATIONS
HIGH CURRENT, HIGH SPEED SWITCHING
SWITCH MODE POWER SUPPLIES (SMPS)
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS

Symbol
Parameter
Value
Un it
BUZ80A
V DS
V DGR
V GS
Drain-source Voltage (V GS = 0)
800
Drain- gate Voltage (R GS = 20 k)
800
G ate-source Voltage
20
ID
Drain Current (continuous) at Tc = 25 C
3.8
ID
Drain Current (continuous) at Tc = 100 oC
2.3
I DM ()
P tot
V ISO
Ts tg
Tj
15
T otal Dissipation at Tc = 25 o C
Drain Current (pulsed)
100
Derating Factor
0.8
W /o C
Insulation W ithstand Voltage (DC)
Storage Temperature
Max. Operating Junction Temperature
-65 to 150
150
() Pulse width limited by safe operating area
November 1998
1/9
BUZ80A
THERMAL DATA
TO-220
R thj -case
Thermal Resistance Junction-case
Max
1.25
C/W
R thj -amb
R thc-sink
Tl
Thermal Resistance Junction-ambient

Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
62.5
0.5
300
C/W
C/W
o
C
AVALANCHE CHARACTERISTICS
Symbo l
Max Valu e
Unit
IAR
Avalanche Current, Repetitive or Not-Repetitive

(pulse width limited by Tj max)
Parameter
3.8
E AS
Single Pulse Avalanche Energy

(starting Tj = 25 o C, I D = IAR , VDD = 50 V)
200
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)

OFF
Symbo l
V (BR)DSS
I DSS
IGSS
Parameter
Drain-source
Breakdown Voltage
Test Con ditions

I D = 250 A
T yp.
Max.
800
V GS = 0
V DS = Max Rating
Zero G ate Voltage
Drain Current (V GS = 0) V DS = Max Rating x 0.8
Gate-body Leakage
Current (VDS = 0)
Min.
Unit
V
Tc = 100 C
V GS = 20 V
250
1000
A
A
100
nA
ON ()
Symbo l
Parameter
Test Con ditions

ID = 250 A
V GS(th)
Gate Threshold
Voltage
R DS(on)
Static Drain-source O n V GS = 10V ID = 1.7 A

Resistance
V GS = 10V ID = 1.7 A
I D(o n)
V DS = V GS
Min.
T yp.
Max.
Unit
2.5
3
6
Tc = 100o C
3.8
On State Drain Current V DS > ID(o n) x R DS(on )ma x

V GS = 10 V
DYNAMIC
Symbo l
g f s ()
C iss
C os s
C rss
2/9
Parameter
Test Con ditions
Forward
Transconductance
V DS > ID(o n) x R DS(on )ma x
Input Capacitance
Output Capacitance
Reverse T ransfer
Capacitance
V DS = 25 V
f = 1 MHz
Min.
I D = 1.7A
V GS = 0
T yp.
Max.
Unit
S
1100
150
35
pF
pF
pF
BUZ80A
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
t d(on)
tr
(di/dt) on
Qg
Q gs
Q gd
T yp.
Max.
Unit
Turn-on Time
Rise Time
Parameter
V DD = 30 V ID = 2.3 A
V GS = 10 V
R G = 50
(see test circuit, figure 3)
Test Con ditions
65
150
90
200
ns
ns
Turn-on Current Slope
V DD = 600 V ID = 3.8 A
V GS = 10 V
R G = 50
80
110
A/s
Total Gate Charge

Gate-Source Charge
Gate-Drain Charge
V DD = 400 V
55
8
26
70
nC
nC
nC
T yp.
Max.
Unit
110
140
150
145
190
200
ns
ns
ns
T yp.
Max.
Unit
3.8
15
A
A
ID = 5 A
Min.
V GS = 10 V
SWITCHING OFF
Symbo l
tr (Voff)
tf
tc
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Con ditions
Min.
V DD = 600 V ID = 3.8 A
R G = 50 V GS = 10 V
SOURCE DRAIN DIODE

Symbo l
Parameter
Test Con ditions
ISD
I SDM ()
Source-drain Current
Source-drain Current
(pulsed)
V SD ()
Forward On Voltage
I SD = 4 A
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I SD = 4 A di/dt = 100 A/s

o
T j = 150 C
V DD = 100 V
t rr
Q rr
I RRM
Min.
V GS = 0
500
ns
4.3
17
() Pulsed: Pulse duration = 300 s, duty cycle 1.5 %

() Pulse width limited by safe operating area
Safe Operating Area
Thermal Impedance
3/9
BUZ80A
Derating Curve
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
4/9
BUZ80A
Capacitance Variations
Normalized Gate Threshold Voltage vs

Temperature
Normalized On Resistance vs Temperature
Turn-on Current Slope
Turn-off Drain-source Voltage Slope
Cross-over Time
5/9
BUZ80A
Switching Safe Operating Area
Accidental Overload Area
Source-drain Diode Forward Characteristics
6/9
BUZ80A
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For

Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching

And Diode Recovery Times
7/9
BUZ80A
TO-220 MECHANICAL DATA

mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
4.40
4.60
0.173
0.181
1.23
1.32
0.048
0.051
2.40
2.72
0.094
D1
0.107
1.27
0.050
0.49
0.70
0.019
0.027
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
4.95
5.15
0.194
0.203
G1
2.4
2.7
0.094
0.106
H2
10.0
10.40
0.393
0.409
14.0
0.511
L2
16.4
L4
0.645
13.0
0.551
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.2
6.6
0.244
0.260
L9
3.5
3.93
0.137
0.154
DIA.
3.75
3.85
0.147
0.151
D1
L5
H2
G1
F1
L2
F2
Dia.
L5
L9
L7
L6
8/9
L4
P011C
BUZ80A
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
1998 STMicroelectronics Printed in Italy All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
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.
9/9
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BUZ80A

N - CHANNEL 800V - 2.5 - 3.8A - TO-220

TYPICAL RDS(on) = 2.5

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Drain- gate Voltage (R GS = 20 k)

Drain Current (continuous) at Tc = 25 C

Drain Current (continuous) at Tc = 100 oC

Drain Current (pulsed)

Insulation W ithstand Voltage (DC)

() Pulse width limited by safe operating area

Thermal Resistance Junction-case

Thermal Resistance Junction-ambient

Avalanche Current, Repetitive or Not-Repetitive

Single Pulse Avalanche Energy

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)

Test Con ditions

Test Con ditions

Static Drain-source O n V GS = 10V ID = 1.7 A

On State Drain Current V DS > ID(o n) x R DS(on )ma x

Test Con ditions

V DS > ID(o n) x R DS(on )ma x

Test Con ditions

Turn-on Current Slope

Total Gate Charge

Test Con ditions

SOURCE DRAIN DIODE

Test Con ditions

I SD = 4 A di/dt = 100 A/s

() Pulsed: Pulse duration = 300 s, duty cycle 1.5 %

Safe Operating Area

Static Drain-source On Resistance

Gate Charge vs Gate-source Voltage

Normalized Gate Threshold Voltage vs

Normalized On Resistance vs Temperature

Turn-on Current Slope

Turn-off Drain-source Voltage Slope

Accidental Overload Area

Source-drain Diode Forward Characteristics

Fig. 2: Unclamped Inductive Waveform

Fig. 3: Switching Times Test Circuits For

Fig. 4: Gate Charge test Circuit

Fig. 5: Test Circuit For Inductive Load Switching

TO-220 MECHANICAL DATA

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