Z01 Series: 1A Triac

Z01 Series
1A TRIACS
STANDARD
MAIN FEATURES:
A2
Symbol
Value
Unit
IT(RMS)
VDRM/VRRM
600 to 800
IGT (Q1)
3 to 25
mA
A1
A2
A1
DESCRIPTION
The Z01 series is suitable for general purpose AC
switching applications. They can be found in
applications
such
as
home
appliances
(electrovalve, pump, door lock, small lamp
control), fan speed controllers,...
Different gate current sensitivities are available,
allowing optimized performances when controlled
directly from microcontrollers.
A2
A1
G A2
TO-92
(Z01xxA)
SOT-223
(Z01xxN)
ABSOLUTE MAXIMUM RATINGS

Symbol
IT(RMS)
ITSM
I t
Parameter
RMS on-state current (full sine wave)
Value
SOT-223
Ttab = 90C
Unit
A
1
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25C)
It Value for fusing
TO-92
TI = 50C
F = 50 Hz
t = 20 ms
F = 60 Hz
t = 16.7 ms
8.5
tp = 10 ms
0.35
A s
dI/dt
Critical rate of rise of on-state current

IG = 2 x IGT , tr 100 ns
F = 120 Hz
Tj = 125C
20
A/s
IGM
Peak gate current
tp = 20 s
Tj = 125C
Tj = 125C
0.1
- 40 to + 150
- 40 to + 125
PG(AV)
Tstg
Tj
Average gate power dissipation

Storage junction temperature range
Operating junction temperature range
July 2003 - Ed: 5
This datasheet has been downloaded from http://www.digchip.com at this page
1/7
Z01 Series
ELECTRICAL CHARACTERISTICS (Tj = 25C, unless otherwise specified)
Symbol
Test Conditions
IGT (1)
Quadrant
RL = 30
VD = 12 V
VD = VDRM
IH (2)
IT = 50 mA
IL
IG = 1.2 IGT
(dV/dt)c (2)
07
09
10
3
5
5
7
10
10
25
25
MAX.
ALL
MAX.
1.3
ALL
MIN.
0.2
RL = 3.3 k Tj = 125C
MAX.
I - III - IV
MAX.
II
dV/dt (2)
Unit
03
I - II - III
IV
VGT
VGD
Z01xx
10
10
mA
25
mA
mA
10
15
25
15
20
25
50
VD = 67 %VDRM gate open Tj = 110C
MIN.
10
20
50
100
V/s
Tj = 110C
MIN.
0.5
V/s
(dI/dt)c = 0.44 A/ms
STATIC CHARACTERISTICS
Symbol
Test Conditions
VTM (2)
ITM = 1.4 A
Vto (2)
tp = 380 s
Value
Unit
Tj = 25C
MAX.
1.6
Threshold voltage
Tj = 125C
MAX.
0.95
Rd (2)
Dynamic resistance
Tj = 125C
MAX.
400
IDRM
VDRM = VRRM
Tj = 25C
0.5
mA
IRRM
Tj = 125C
MAX.
Note 1: minimum IGT is guaranted at 5% of IGT max.

Note 2: for both polarities of A2 referenced to A1
THERMAL RESISTANCES
Symbol
Parameter
Unit
C/W
Rth(j-t)
Junction to tab (AC)
SOT-223
25
Rth(j-l)
Junction to lead (AC)
TO-92
60
Rth(j-a)
Junction to ambient
SOT-223
60
TO-92
150
S = Copper surface under tab
2/7
Value
S = 5 cm
C/W
Z01 Series
PRODUCT SELECTOR
Voltage
Part Number
600 V
700 V
Sensitivity
Type
Package
800 V
Z0103MA
3 mA
Standard
TO-92
Z0103MN
3 mA
Standard
SOT-223
Z0103SA
3 mA
Standard
TO-92
Z0103SN
3 mA
Standard
SOT-223
Z0103NA
3 mA
Standard
TO-92
Z0103NN
3 mA
Standard
SOT-223
Z0107MA
5 mA
Standard
TO-92
Z0107MN
5 mA
Standard
SOT-223
Z0107SA
5 mA
Standard
TO-92
Z0107SN
5 mA
Standard
SOT-223
Z0107NA
5 mA
Standard
TO-92
Z0107NN
5 mA
Standard
SOT-223
Z0109MA
10 mA
Standard
TO-92
Z0109MN
10 mA
Standard
SOT-223
Z0109SA
10 mA
Standard
TO-92
Z0109SN
10 mA
Standard
SOT-223
Z0109NA
10 mA
Standard
TO-92
Z0109NN
10 mA
Standard
SOT-223
Z0110MA
25 mA
Standard
TO-92
Z0110MN
25 mA
Standard
SOT-223
Z0110SA
25 mA
Standard
TO-92
Z0110SN
25 mA
Standard
SOT-223
Z0110NA
25 mA
Standard
TO-92
Z0110NN
25 mA
Standard
SOT-223
ORDERING INFORMATION
01 03
M A
Blank
1AA2
TRIAC
SERIES
VOLTAGE:
M: 600V
S: 700V
N: 800V
CURRENT: 1A
PACKAGE:
A: TO-92
N: SOT-223
PACKING MODE:
1AA2: TO-92 bulk (preferred)
2AL2: TO-92 ammopack
5AA4: SOT-223 Tape & reel
SENSITIVITY:
03: 3mA
07: 5mA
09: 10mA
10: 25mA
3/7
Z01 Series
OTHER INFORMATION
Part Number
Marking
Weight
Base
quantity
Packing
mode
Z01xxyA 1AA2
Z01xxyA
0.2 g
2500
Bulk
Z01xxyA 2AL2
Z01xxyA
0.2 g
2000
Ammopack
Z0103yN 5AA4
Z3y
0.12 g
1000
Tape & reel
Z0107yN 5AA4
Z7y
0.12 g
1000
Tape & reel
Z0109yN 5AA4
Z9y
0.12 g
1000
Tape & reel
Z0110yN 5AA4
Z0y
0.12 g
1000
Tape & reel
Note: xx = sensitivity, y = voltage
Fig. 1: Maximum power dissipation versus RMS

on-state current (full cycle).
Fig. 2-1: RMS on-state current versus ambient

temperature (full cycle).
P(W)
IT(RMS)(A)
1.50
1.2
1.25
1.0
1.00
0.8
0.75
0.6
0.50
0.4
SOT-223
(Rth(j-a)=Rth(j-t))
TO-92
(Rth(j-a=Rth(j-l))
0.2
0.25
Tl or Ttab (C)
IT(RMS)(A)
0.00
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
0.0
Fig. 2-2: RMS on-state current versus ambient

temperature (full cycle).
Fig. 3: Relative variation of thermal impedance

junction to ambient versus pulse duration.
25
100
125
1.00
SOT-223
(Rth(j-a)=60C/W)
1.0
0.8
Z01xxxA
0.6
0.10
TO-92
Rth(j-a)=150C/W
0.4
0.2
4/7
75
K=[Zth(j-a)/Rth(j-a)]
IT(RMS)(A)
1.2
0.0
50
Z01xxxN
Tamb(C)
0
25
50
75
tp(s)
100
125
0.01
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2 5E+2
Z01 Series
Fig. 4: Relative variation of gate trigger current,

holding current and latching current versus
junction temperature (typical values).
Fig. 5: Surge peak on-state current versus

number of cycles.
IGT,IH,IL [Tj] / IGT,IH,IL [Tj=25C]
ITSM(A)
2.5
2.0
IGT
1.5
IH & IL
1.0
0.5
Tj(C)
0.0
-40
-20
20
40
60
80
100
120
140
Fig. 6: Non-repetitive surge peak on-state

current for a sinusoidal pulse with width
tp < 10ms, and corresponding value of It.
9
8
7
6
5
4
3
2
1
0
t=20ms
One cycle
Non repetitive
Tj initial=25C
Repetitive
Tamb=25C
Number of cycles
10
Fig. 7:
values).
100
On-state
characteristics
1000
(maximum
ITM(A)
ITSM (A), It (As)
10.0
100.0
Tj initial=25C
dI/dt limitation:
20A/s
ITSM
10.0
Tj=Tj max.
1.0
1.0
Tj=25C
It
tp (ms)
Tj max.
Vto= 0.95 V
Rd= 420 m
10.00
VTM(V)
0.1
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Fig. 8: Relative variation of critical rate of

decrease of main current versus (dV/dt)c (typical
values).
Fig. 9: Relative variation of critical rate of

decrease of main current versus junction
temperature.
0.1
0.01
0.10
1.00
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c

2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
Z0109
Z0103
0.6
Z0107
0.4
Z0110
0.2
(dV/dt)c (V/s)
0.0
0.1
1.0
10.0
(dI/dt)c [Tj] / (dI/dt)c [Tj specified]

6
5
4
3
2
1
100.0
Tj (C)
0
25
50
75
100
125
5/7
Z01 Series
Fig. 10: SOT-223 Thermal resistance junction to

ambient versus copper surface under tab (printed
circuit board FR4, copper thickness: 35m).
Rth(j-a) (C/W)
130
120
110
100
90
80
70
60
50
40
30
20
10
0
0.0
SOT-223
S(cm)
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
PACKAGE MECHANICAL DATA

SOT-223 (Plastic)
DIMENSIONS
c
REF.
A1
Min.
B
e1
D
B1
H E
6/7
Millimeters
A
A1
B
B1
c
D
e
e1
E
H
V
0.02
0.60
2.90
0.24
6.30
3.30
6.70
Typ.
0.70
3.00
0.26
6.50
2.3
4.6
3.50
7.00
Max.
Inches
Min.
Typ.
Max.
1.80
0.071
0.1 0.0008
0.004
0.85 0.024 0.027 0.034
3.15 0.114 0.118 0.124
0.35 0.009 0.010 0.014
6.70 0.248 0.256 0.264
0.090
0.181
3.70 0.130 0.138 0.146
7.30 0.264 0.276 0.287
10 max
Z01 Series
FOOTPRINT DIMENSIONS (in millimeters)
SOT-223 (Plastic)
PACKAGE MECHANICAL DATA

TO-92 (Plastic)
DIMENSIONS
REF.
Min.
a
B
Millimeters
A
B
C
D
E
F
a
Typ.
Max.
Inches
Min.
1.35
Typ.
Max.
0.053
4.70
0.185
2.54
0.100
4.40
12.70
0.173
0.500
3.70
0.45
0.146
0.017
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
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Z01 Series

ABSOLUTE MAXIMUM RATINGS

Critical rate of rise of on-state current

Peak gate current

Average gate power dissipation

July 2003 - Ed: 5

This datasheet has been downloaded from http://www.digchip.com at this page

VD = 67 %VDRM gate open Tj = 110C

(dI/dt)c = 0.44 A/ms

Note 1: minimum IGT is guaranted at 5% of IGT max.

Junction to tab (AC)

Junction to lead (AC)

S = Copper surface under tab

Tape & reel

Tape & reel

Tape & reel

Tape & reel

Note: xx = sensitivity, y = voltage

Fig. 1: Maximum power dissipation versus RMS

Fig. 2-1: RMS on-state current versus ambient

Fig. 2-2: RMS on-state current versus ambient

Fig. 3: Relative variation of thermal impedance

Fig. 4: Relative variation of gate trigger current,

Fig. 5: Surge peak on-state current versus

IGT,IH,IL [Tj] / IGT,IH,IL [Tj=25C]

Fig. 6: Non-repetitive surge peak on-state

ITSM (A), It (As)

Fig. 8: Relative variation of critical rate of

Fig. 9: Relative variation of critical rate of

(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c

(dI/dt)c [Tj] / (dI/dt)c [Tj specified]

Fig. 10: SOT-223 Thermal resistance junction to

PACKAGE MECHANICAL DATA

PACKAGE MECHANICAL DATA

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