EC2403 Ec2403 RF and Microwave Engg

DOC/LP/01/28.02.
02
LESSON PLAN
Sub Code & Name: EC2403 RF AND MICROWAVE ENGG
Unit : I
Branch : EC
Semester :VII
UNIT I
Syllabus:
LP EC2403
LP Rev. No: 00
Date: 07/07/11
Page 01 of 06
TWO PORT RF NETWORKS-CIRCUIT REPRESENTATION
Low frequency parameters-impedance, admittance, hybrid and ABCD, High

frequency parameters-Formulation of S parameters, properties of S
parameters-Reciprocal and lossless networks, transmission matrix,
Introduction to component basics, wire, resistor, capacitor and inductor,
applications of RF
Objective: To study the two port RF Networks, its parameters & Circuit
representation.
Session
Topics to be covered
No.
1.
Introduction: RF, frequency range, properties of
RF, two port networks.
2.
Low frequency parameters-impedance or Zparameters, admittance or Y- parameters.
3.
Hybrid or h-parameters
4.
Transmission or ABCD parameters
5.
High frequency parameters, Formulation of S
parameters.
6.
Properties of S parameters
7.
Reciprocal and lossless networks.
8.
Transmission Matrix, Generalized Scattering
parameters.
9.
Introduction to component basics, wire, resistor,
capacitor and inductor,
10. Applications of RF
11. Tutorial
CAT I
Time
Ref
50m
2,4
Teaching
Method
BB
50m
BB
50m
50m
50m
4
4
4,2
BB
BB
BB
50m
50m
50m
4,2
4,2
4,2
BB
BB
BB
50m
4,2
BB
50m
50m
4,2
BB
BB
DOC/LP/01/28.02.02
LESSON PLAN
LP EC2403
LP Rev. No: 00
Date: 07/07/11
Page 02 of 06

Unit : II
Branch : EC
Semester :VII
UNIT II RF TRANSISTOR AMPLIFIER DESIGN AND MATCHING NETWORKS 9

Syllabus:
Amplifier power relation, stability considerations, gain considerations noise
figure, impedance matching networks, frequency response, T and matching
networks, microstripline matching networks
Session
No.
12
13
Time
Ref
Introduction to RF Amplifiers, Characteristics

50m
2,4
Amplifier power relations- RF source, Transducer
50m
2,4
power gain, Additional power relations
14
Stability Considerations- Stability circles
50m
2,4
15
Unconditional Stability, Stabilization Methods
50m
2,4
16
Gain considerations
50m
2,4
17
Noise Figure & Constant VSWR
50m
2,4
18
Impedance matching networks
50m
2
19
Forbidder regions, frequency response, Quality factor 50m
2
20
T and Pi matching networks
50m
2
21
Microstrip line matching networks ( single stub &
50m
2
Double stub matching)
22
Tutorial
50m
CAT II
Objective: To study the RF transistor amplifier design and matching networks.
Teaching
Method
BB
BB
BB
BB
BB
BB
BB
BB
BB
BB
BB
DOC/LP/01/28.02.02
LESSON PLAN
LP EC2403
LP Rev. No: 00
Date: 07/07/11
Page 03 of 06

Unit : III
Branch : EC
Semester :VII
UNIT III
MICROWAVE PASSIVE COMPONENTS
Syllabus:
Microwave frequency range, significance of microwave frequency range applications of microwaves. Scattering matrix -Concept of N port scattering
matrix representation-Properties of S matrix- S matrix formulation of two-port
junction. Microwave junctions -Tee junctions -Magic Tee - Rat race - Corners bends and twists - Directional couplers -two hole directional couplers- Ferrites
- important microwave properties and applications Termination - GyratorIsolator-Circulator - Attenuator - Phase changer S Matrix for microwave
components Cylindrical cavity resonators..
Objective: To have an introduction about microwave communication and to study
about various microwave waveguides and derive their S matrix.
Session Topics to be covered

No.
23
Microwave frequency range, significance of
microwave frequency range - applications of
microwaves.
24
Scattering matrix -Concept of N port scattering
matrix representation
25
Properties of S matrix- S matrix formulation of
two-port
junction.Properties
of
Rat
Race,Corners,Bends and Twists.
26
S-matrix of E plane and H-plane TEE,Properties
27
S-matrix of Magic TEE,Properties
28
Directional couplers -two hole directional
couplers-S matrix and Properties
29
Ferrites - important microwave properties and
applications. S-matrix of Isolator-Circulator
Time
Ref
Teaching
Method
BB
50m
1,3
50m
1,3,5
BB
50m
1,3,5
BB
50m
50m
50m
1,2
1,3,5
1,3,5
BB
BB
BB
50m
BB
DOC/LP/01/28.02.02
30
31
Termination Gyrator, Attenuator - Phase 50m

changer
Cylindrical cavity resonators
50m
CAT III
BB
BB
LESSON PLAN
Unit : IV
Branch : EC
Semester :VII
UNIT IV
MICROWAVE SEMICONDUCTOR DEVICES
LP EC2403
LP Rev. No: 00
Date: 07/07/11
Page 04 of 06
Syllabus:
Microwave semiconductor devices- operation - characteristics and application of
BJTs and FETs -Principles of tunnel diodes - Varactor and Step recovery diodes
Transferred electron Devices -Gunn diode- Avalanche Transit time devices- IMPATT
and TRAPATT devices. Parametric devices -Principles of operation - applications of
parametric amplifier .Microwave monolithic integrated circuit (MMIC) - Materials and
fabrication techniques
Objective: To learn the various semiconductor devices,amplifiers and fabrication

techniques of microwave Integrated circuits.
Session
No.
Microwave semiconductor devices- operation
32
33
34
35
36
37
38
Characteristics and applications of Microwave

BJTs .Microwave field effect transistors-Physical
structure,Principles of operation
Principles of tunnel diodes - Varactor and Step
recovery diodes, Transferred electron Devices
Gunn-Effect Diodes - GaAs Diode, Background, Gunn
Effect, Ridely-Watkins-Hilsun (RWH) Theory,
Differential Negative Resistance
Avalanche transit-time devices -Output Power and
Quality Factor, IMPATT Diodes, Physical Structures,
Negative Resistance, Power Output and Efficiency
TRAPATT Diodes, Physical Structures, Principles of
Operation, Power Output and Efficiency
Parametric Devices, Physical Structures, Nonlinear
Reactance(Small signal method)
Time
Ref
50m
1,5
Teaching
Method
BB
50m
1,5
BB
50m
1,5
BB
50m
1,5
BB
50m
1,5
BB
50m
1,5
BB
50m
1,5
BB
DOC/LP/01/28.02.02
39
40
Cont. (Large signal method),Manley rowe power

Relations,Parametric Amplifiers(Parametric up &
down converter), Applications.
Microwave monolithic integrated circuit (MMIC)
Introduction and Fabrication Techniques
CAT IV
50m
1,5
BB
50m
1,5
BB
DOC/LP/01/28.02.02
LESSON PLAN
LP- EC2403
LP Rev. No: 00
Date: 07/07/11
Page 05 of 06

Unit : V
Branch : EC
Semester :VII
UNIT V
MICROWAVE TUBES AND MEASUREMENTS
Syllabus:
Microwave tubes- High frequency limitations - Principle of operation of
Multicavity Klystron, Reflex Klystron, Traveling Wave Tube, Magnetron.
Microwave measurements:Measurement of power, wavelength, impedance,
SWR, attenuation, Q and Phase shift.
Objective: To study the various microwave sources, their principle of operation and
measurement of various parameters
Session
No.
41
42
43
44
45
46
47
48
49
50
Time
Ref
Klystrons, Reentrant Cavities, Velocity-Modulation

Process, Bunching Process, Output Power and
Beam Loading(Efficiency)
Multi-cavity Klystron Amplifiers, Beam-Current
Density, Output Current Output Power of TwoCavity Klystron, Four-Cavity Klystron
Reflex Klystrons, Velocity Modulation, Power
Output and Efficiency
Electronic Admittance, Helix Traveling-Wave
Tubes (TWTs), Slow-Wave structures,
Amplification Process
Convection Current, Axial Electric Field, Wave
Modes, Gain Consideration
Microwave crossed-field tubes , Magnetron
Oscillators, Cylindrical Magnetron(Angular
frequency,Output power and efficiency)
Power measurement (Schottky Barrier Diode
sensor,Bolometer sensor,Power meter,
Thermocouple sensor,Calorimetric method)
Impedance measurement(Slotted line method,
Reactive discontinuity method,Reflectometer
method)
Slotted line VSWR measurement,
VSWR through return loss measurements
Attenuation and Wavelength
measurement,Measurement of Q and Phase shift.
50m
Teaching
Method
BB
50m
BB
50m
BB
50m
BB
50m
BB
50m
BB
50m
BB
50m
BB
50m
BB
50m
BB
DOC/LP/01/28.02.02
CAT V
LESSON PLAN
LP EC2403
LP Rev. No: 00
Date: 07/07/11
Page 06 of 06

Branch : EC
Semester :VII
Course Delivery Plan:
Week
1
I
2
II
Units
3
II
4
II
5
II
6
II
7
II
8
II
9
II
10
II
11
II
12
II
CAT 3
1111111
13
II
CAT 4
1111111
TEXT BOOKS
1. Samuel Y. Liao: Microwave Devices and Circuits - Prentice Hall of India, 2006.
2. Reinhold.Ludwig
CAT 1 and Pavel Bretshko
CAT 2 RF Circuit Design, Pearson Education,
Inc., 2006. 1111111
1111111
REFERENCES
3. Robert .E. Collin: Foundations for Microwave Engg- Mc Graw Hill. (2001)
4. M.M.Radmanesh, RF & Microwave Electronics Illustrated, Pearson Education,
2007.
5. David M.Pozar: Microwave Engg. - John Wiley & Sons - 2 nd Edition (2006)
6. Annapurna Das and Sisir K.Das: Microwave Engineering - Tata McGraw-Hill
(2004)
Prepared by
Approved by
K.SRIVIDHYA /
S.SARAVANAN
Prof.E.G.GOVINDAN
Assistant Professor/ ECE
HOD/EC
Signature
Name
Designation
Date
07/07/2011
CAT 5
II

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DOC/LP/01/28.02.

TWO PORT RF NETWORKS-CIRCUIT REPRESENTATION

Low frequency parameters-impedance, admittance, hybrid and ABCD, High

Sub Code & Name: EC2403 RF AND MICROWAVE ENGG

UNIT II RF TRANSISTOR AMPLIFIER DESIGN AND MATCHING NETWORKS 9

Introduction to RF Amplifiers, Characteristics

Sub Code & Name: EC2403 RF AND MICROWAVE ENGG

MICROWAVE PASSIVE COMPONENTS

Session Topics to be covered

Termination Gyrator, Attenuator - Phase 50m

MICROWAVE SEMICONDUCTOR DEVICES

Objective: To learn the various semiconductor devices,amplifiers and fabrication

Characteristics and applications of Microwave

Cont. (Large signal method),Manley rowe power

Sub Code & Name: EC2403 RF AND MICROWAVE ENGG

MICROWAVE TUBES AND MEASUREMENTS

Klystrons, Reentrant Cavities, Velocity-Modulation

Sub Code & Name: EC2403 RF AND MICROWAVE ENGG

Course Delivery Plan:

Assistant Professor/ ECE

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