Blocking Diode - Schottky Style Diode NSR1020MW2T1-D

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NSR1020MW2T1G

Schottky Barrier Diodes


This Schottky Barrier Diode in the SOD323 package offers
extremely low Vf performance. The low forward voltage makes them
capable of handling high current in a very small package. The
resulting device is ideally suited for application as a blocking diode in
charging applications or as part of discrete buck converter or discrete
boost converter. As part of a buck conversion circuit, a boost
conversion circuit or a charging circuit the low Vf drop of the Schottky
improves the efficiency of the overall device by consuming less power
in the forward mode.
Features

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HIGH CURRENT
SCHOTTKY BARRIER DIODE

Low Forward Voltage 0.24 Volts (Typ) @ IF = 10 mAdc


High Current Capability
ESD Rating Human Body Model: CLASS 3B

1
CATHODE

Machine Model: C
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant

MAXIMUM RATINGS (TJ = 125C unless otherwise noted)


Rating
Reverse Voltage
Peak Revese Voltage

Symbol

Value

Unit

VR

20

Vdc

VRM

30

200
2.0

mW
mW/C

Forward Power Dissipation


@ TA = 25C
Derate above 25C

PF

Forward Current (DC)


Continuous

IF

Forward Current
t = 8.3 ms Half Sinewave

IF

Junction Temperature

TJ

125 Max

Storage Temperature Range

Tstg

55 to +150

1
5

2
ANODE

MARKING
DIAGRAM

2
1

RE MG
G

SOD323
CASE 477
STYLE 1

RE = Specific Device Code


M = Date Code
G
= PbFree Package
(Note: Microdot may be in either location)

ORDERING INFORMATION

Stresses exceeding Maximum Ratings may damage the device. Maximum


Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.

Device

Package

Shipping

NSR1020MW2T1G SOD323 3000/Tape & Reel


(PbFree)
NSR1020MW2T3G SOD323 10,000/Tape & Reel
(PbFree)
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.

Semiconductor Components Industries, LLC, 2010

September, 2010 Rev. 1

Publication Order Number:


NSR1020MW2T1/D

NSR1020MW2T1G
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic

Symbol

Min

Typ

Max

Unit

Total Capacitance (VR = 5.0 V, f = 1.0 MHz)

CT

25

29

pF

Reverse Leakage (VR = 15 V)

IR

40

mAdc

Forward Voltage (IF = 1 mAdc)

VF

0.20

Vdc

Forward Voltage (IF = 10 mAdc)

VF

0.26

Vdc

Forward Voltage (IF = 100 mAdc)

VF

0.33

Vdc

Forward Voltage (IF = 500 mAdc)

VF

0.44

Vdc

Forward Voltage (IF = 1000 mAdc)

VF

0.54

Vdc

10000

100

IR, REVERSE CURRENT (mA)

150C

150C

10

85C
55C

1
0.0

25C
0.1

45C
0.2
0.3

0.4

0.5

125C

1000

85C
100

10
25C
1

0.6

10

15

20

VF, FORWARD VOLTAGE (V)

VR, REVERSE VOLTAGE (V)

Figure 1. Forward Voltage

Figure 2. Leakage Current

140
120
CT, CAPACITANCE (pF)

IF, FORWARD CURRENT (mA)

1000

100
80
60
40
20
0

10

15

VR, REVERSE VOLTAGE (V)

Figure 3. Total Capacitance

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2

20

25

NSR1020MW2T1G
PACKAGE DIMENSIONS
SOD323
CASE 47702
ISSUE H
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. LEAD THICKNESS SPECIFIED PER L/F DRAWING
WITH SOLDER PLATING.
4. DIMENSIONS A AND B DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
5. DIMENSION L IS MEASURED FROM END OF RADIUS.

HE
D

MILLIMETERS
DIM MIN
NOM MAX
A
0.80
0.90
1.00
A1 0.00
0.05
0.10
A3
0.15 REF
b
0.25
0.32
0.4
C 0.089
0.12 0.177
D
1.60
1.70
1.80
E
1.15
1.25
1.35
L
0.08
HE
2.30
2.50
2.70

A3
A
C

NOTE 3

NOTE 5

INCHES
NOM MAX
0.035 0.040
0.002 0.004
0.006 REF
0.010 0.012 0.016
0.003 0.005 0.007
0.062 0.066 0.070
0.045 0.049 0.053
0.003
0.090 0.098 0.105

MIN
0.031
0.000

STYLE 1:
PIN 1. CATHODE
2. ANODE

A1

SOLDERING FOOTPRINT*
0.63
0.025
0.83
0.033
1.60
0.063
2.85
0.112
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including Typicals must be validated for each customer application by customers technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION


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NSR1020MW2T1/D

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