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    Mid Exam ECE 1312 Question S2 1011

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    Fatihah Aina
    This document is a midterm examination for an Electronics course taken at the International Islamic University Malaysia. It consists of 4 questions covering various topics in electronics. The questions involve calculations related to semiconductor doping, diode circuits, transistor biasing and modes of operation. The exam is worth 15% of the student's final grade and must be completed within 2 hours.

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    © All Rights Reserved
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    Mid Exam ECE 1312 Question S2 1011

    Uploaded by

    Fatihah Aina
    235 views11 pages
    This document is a midterm examination for an Electronics course taken at the International Islamic University Malaysia. It consists of 4 questions covering various topics in electronics. The questions involve calculations related to semiconductor doping, diode circuits, transistor biasing and modes of operation. The exam is worth 15% of the student's final grade and must be completed within 2 hours.

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    Mid Exam ECE 1312 Question S2 1011 iium

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    This document is a midterm examination for an Electronics course taken at the International Islamic University Malaysia. It consists of 4 questions covering various topics in electronics. The questions involve calculations related to semiconductor doping, diode circuits, transistor biasing and modes of operation. The exam is worth 15% of the student's final grade and must be completed within 2 hours.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    235 views11 pages

    Mid Exam ECE 1312 Question S2 1011

    Uploaded by

    Fatihah Aina
    This document is a midterm examination for an Electronics course taken at the International Islamic University Malaysia. It consists of 4 questions covering various topics in electronics. The questions involve calculations related to semiconductor doping, diode circuits, transistor biasing and modes of operation. The exam is worth 15% of the student's final grade and must be completed within 2 hours.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
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    Name:

    Matric No:

    INTERNATIONAL ISLAMIC UNIVERSITY MALAYSIA


    MID TERM EXAMINATION
    SEMESTER 2, 2010/2011 SESSION
    KULLIYYAH OF ENGINEERING

    Program

    : ENGINEERING

    Level of Study

    : UG1

    Time

    : 10 am 12:00 pm

    Date

    : 12/2/2011

    Duration

    : 2 hours
    Section(s)

    : 1-10

    Course Code : ECE 1312


    Course Title

    : Electronics

    This Question Paper Consist of Four (5) Printed Pages (Including Cover Page) With Four (4)
    Questions.

    INSTRUCTION(S) TO CANDIDATES
    DO NOT OPEN UNTIL YOU ARE ASKED TO DO SO

    Total mark of this examination is 100

    This examination is worth 15% of the total final assessment.

    Answer all 4 (Four) questions.

    Any form of cheating or attempt to cheat is a serious offence which may lead to
    dismissal.

    Electronics

    Q.1

    ECE 1312

    [20 marks]

    a) Silicon with an intrinsic carrier concentration of 1.5 x 1010 /cm3 is doped with 5 x 1016
    atoms/cm3 of an element X. After doping, silicon becomes an n-type material.
    (10 marks)
    i)
    Give an example of element X.

    ii)

    Calculate the electron and hole concentrations in the material at T= 300K.

    Electronics

    iii)

    ECE 1312

    Consider a p-n junction with the n-type doping the same as above, 5 x 1016
    atoms/cm3. If the built in voltage is to be 0.712 V , what is the p-type doping
    concentration?

    b) Describe the difference between drift and diffusion currents and state their governing
    equations
    (5 marks)

    Electronics

    ECE 1312

    c) For the circuits shown in Fig. 1(c), assume that V = 0.7 V. Calculate the current I and
    voltage V.
    (5 marks)

    Fig. 1(c)

    Electronics

    Q.2

    ECE 1312

    [20 marks]

    a) The full wave rectifier circuit shown in Fig. 2(a) has an input signal whose frequency is
    50 Hz. The rms value of s = 8.5 V Assume each diode cut-in
    in voltage is V = 0.7 V.
    (5 marks)
    i.
    What is the maximum value of vo?
    ii.
    What is the Peak Inverse
    nverse Voltage (PIV) rating of each diode?

    Fig.2(a)

    Electronics

    ECE 1312

    b) The
    he diode circuit shown in Fig. 2(b)(ii) has a square wave input shown in Fig. 2(b)(i).
    Plot the Vo against time. As
    Assume a cut-in voltage, V = 0.6 V and VB = 5 V. (5 marks)
    15
    V

    -5 V

    (i)
    Fig. 2(b)(i)

    Fig. 2(b)(ii)

    Electronics

    ECE 1312

    c) The clamper circuit shown in Fig. 2(c)(i) has a sinusoidal wave input shown in Fig.
    2(b)(ii) with VM = 5 V. Plot the Vo against time. Assume a cut-in voltage, V = 0.7 V.
    (5 marks)

    Fig. 2(c)(i)

    Fig. 2(c)(ii)

    Electronics

    ECE 1312

    d) A Zener diode circuit is shown in Fig. 2(d). Calculate RL such that IZ = 0.1 IR. (5 marks)

    IR

    Fig. 2(d)

    IRL

    Electronics

    Q.3

    ECE 1312

    [20 marks]

    a) The npn transistor shown in Fig. 3(a) has a current source, IE = 1.5 mA and = 100.
    Determine IB, IC, and VC. What mode is the transistor operating in?
    (5 marks)

    Fig. 3(a)

    Electronics

    ECE 1312

    b) The pnp transistor shown in Fig. 3(b) has = 100. Plot the voltage transfer characteristic
    (VO versus VI) over the range 0 VI 5 V.
    (7 marks)

    Fig. 3(b)

    Electronics

    ECE 1312

    c) The pnp transistor shown in Fig. 3(c) is operating in saturation with VEC (sat) = 0.2 V and
    VEB = 0.7V. Calculate IB, IC, IE and . Sketch the load line and plot the Q-point values for
    the IC versus VEC graph.
    (8 marks)

    Fig. 3(c)

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