Theoretical Investigation of Highly Efficient Zno Heterostructure-Based Bluish Light Emitting Diode
Theoretical Investigation of Highly Efficient Zno Heterostructure-Based Bluish Light Emitting Diode
Theoretical Investigation of Highly Efficient Zno Heterostructure-Based Bluish Light Emitting Diode
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European Journal of Advances in Engineering and Technology, 2014, 1(2): 39-50
Research Article
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INTRODUCTION
Recently there has been profound interest in ZnO and its alloys while realizing high performance visible and ultra
violet (UV) light emitting devices. The ZnO has a direct band gap of 3.37 eV at room temperature, a high freeexciton binding energy of 60 meV, relatively low material cost and long-term stability [1]. Compared to its group
III-N counterparts, ZnO possesses advantages including higher quantum efficiency, greater resistance to highenergy radiation, availability of high-quality substrates [leading to simple vertical light-emitting diodes (LEDs)
geometries], and the ability to use wet chemical etching [1,2]. The band gap Eg linearly increases with x up to 4.15
eV for 0< x< 0.36 while still maintaining the wurtzite structure [3] and saturates at higher Mg concentrations due
to MgO segregation. This indicates that MgxZn1xO is a suitable material for barrier layers in ZnO/ MgZnO
hetero structures with a band-gap offset up to 0.85eV [4,13]. Similarly, Cd incorporation in ZnO results in the
reduction of band gap energy since CdO (2.3 eV) has smaller band gap. To achieve a broader range of emission
wavelengths, ZnCdO active regions have been considered essential due to the controllability of band gap. Thus, we
designed double heterostructure system with CdZnO active region [5]. There are several reports [6-8] on the
growth of heterostructure materials to form LEDs; however, in all those cases, the hetero-interfaces had to
accommodate a large lattice mismatch in the interface of the constituent layers; that on the other hand has greatly
compromised with the device performance. Dislocations formed at the device interface as a result of strain
generally form non-radiative defects that can seriously reduce the quantum efficiency of LEDs [9]. The realization
of band gap engineering to create barrier layers in heterostructure devices is critically important in the design of
such ZnO-based heterostructure LEDs. Here we adopted all ZnO layers approach on silicon substrate. Several
parameters have been considered for the heterojuntion device designed for 430 nm emission wavelength. The double
heterostructure device increases the carrier density in the radiative recombination region by confining the carriers in
the active region, thus resulting in an enhancement of the light emission.
ZnO material system-based blue LEDs are attractive due to their high brightness and high-power capability in
lighting and display applications. Reliable and highly efficient blue light emitting diodes are in high demand for
daily uses [8]. Methods for maximizing the efficiency of light emitting diodes typically fall into two categories.
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The first is to improve the efficiency of light emission in the active region, or the internal quantum efficiency
(IQE). The second method is to increase the ratio of photons leaving the LED to those created in the active region,
or the external quantum efficiency (EQE) [9]. We have put our emphasis on internal quantum efficiency by
optimizing the design parameters to enhance the radiative recombination rate in the device active region. Fig.1
presents the cross-sectional view of the device studied in this paper.
In this paper, the device modelling and numerical simulation for the ZnO-based heterostructure LED in terms of
constituent layer structure, doping and composition and their effect on light emission from the device and its
threshold behaviour is thoroughly examined. This paper is divided into five sections. Section two describes the
heterostructure device under consideration, detailing the layer characteristics considered for IQE optimization, and
summarizes the material models employed in the simulations. This section is further subdivided into five parts to
discuss the design tradeoffs for the electron and hole blocking layers, effects of active region thickness and cap
layers performance parameters on device IQE. Section third emphasized on the band gap engineering for hetero
junction devices. Section fourth presents the design issues approach and analysis of simulated results. Finally,
conclusions are discussed in last section.
Fig.1 Cross sectional view of the considered LED structure, outlining the regions whose parameters has been optimized in order to
achieve the maximum IQE
DEVICE STRUCTURE
On top of the substrate, an n-type ZnO layer is deposited and this layer behaves as a bottom contact layer. An n-type
MgZnO layer is grown on the top of bottom contact layer which will act as a barrier for holes. In the heterostructure
device, the Cd0.15Zn0.85O layer is considered to be the active region. An electron barrier layer of MgZnO remains on
the top of CdZnO active region, and this layer will act as a current spreading layer [10]. The top and bottom barrier
layers have lower index of refraction thus they confine light by reflections at interfaces. Finally, the structure is
completed with a top p-type ZnO contact layer. Au/Ti and Au/Ni were taken as anode and cathode electrodes to
make good ohmic contacts [11]. In the simulation the device width has been considered to be 1m. The effect of
thickness and doping concentration of contact layer on the device performance has been investigated. Furthermore
the effect of barrier thickness, doping concentration, and composition, on the behavior of the device has also been
studied.
The device performance of heterostructure LED has been evaluated through the optical intensity which also gives
photo generation rate. The intensity peak has been observed as a function of wavelength for uniform mesh density.
The generation rate for a double heterostructure LED in terms of quantum efficiency is given by
G =
(1)
where o is internal quantum efficiency, min and max are spectral limits in terms of wavelength, P is ray intensity
factor representing cumulative loss due to reflections, transmission etc in terms of wavelength, is absorption
coefficient of source, , h is Plancks constant and y is depth of device [12].
The extraction of the integrated radiative recombination in the device provides an estimate of luminous intensity. In
order to extract luminous intensity, a luminous wavelength is specified in terms of wavelength parameter. The
equation for luminous intensity (P) is:
.
=
Where Rrad is radiative recombination coefficient and is wavelength [12].
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(2)
The table I shows the material parameters required by the carrier transport equations, including the non-radiative,
radiative, and Auger recombination coefficients, electron and hole mobilities and other additional parameters for
ZnO based ternary alloys. In this device optimization, the composition of Cd in CdZnO has been kept fixed at 15%.
All parameters were taken at room temperature [13], [14].
Table -1 Material Parameters used in the Simulation Study for the Binary and Ternary Alloys of Double Heterostructure LED
Parameters
ZnO
MgxZn1-xO
Cd0.15Zn0.85O
Electrons, n sec
6.5
Holes, n sec
Recombination lifetime
3
-11
Radiative coefficient, cm s
1.110
1.010-34
2.810-34
1.010-34
1.010-34
1.010-34
1.010-34
Permittivity
10.5
5.6
Band gap, eV
3.37
4.1
3.0
300
50
50
1 1
2000
300
300
1 1
1 1
30
20
20
Maximum, cm V s
Minimum, cm V s
Hole mobility
1.110-11
210
Auger coefficient
Electron mobility
-11
Maximum, cm V s
Active region
Composition, %
0.1-0.3%
0.1-0.2%
0.15%
-3
Carrier concentration, cm
Thickness, nm
16
5 10 - 5 10
50-400
18
16
5 10 - 5 10
18
50-500
Intrinsic
30-200
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16
5 10 - 5 10
50-100
18
16
5 10 - 5 1019
50-500
(a)
(b)
(c)
(d)
Fig. 2 Simulated (a) emission intensity spectra (b) I-V characteristic (c) luminous power spectra and (d) internal quantum efficiency as a
function of Mg composition of the EBL layer of heterostructure LED
Doping Concentration
The doping level in the EBL is the second design degree of freedom in our device structure. It can be seen from Fig.
3 that the intensity shows a six-fold increment and luminous power increases from 0.12 W to 0.58 W with the
acceptor doping concentration in the EBL. The threshold voltage also reduces from 3.6V to 3.3V as we increase the
doping concentration (from 51016 to 51018 cm-3). The intensity had found to a minor impact on doping
concentration. The composition and thickness is fixed at 10% and 50 nm when the Mg composition is varied.
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(a)
(b)
(c)
(d)
Fig. 3 Simulated (a) emission intensity spectra (b) I-V characteristic (c) luminous power spectra and (d) internal quantum efficiency as a
function of hole doping concentration of the EBL layer of heterostructure LED
Thickness
The last device parameter in our structure of designing the EBL is its thickness. The current voltage characteristics
shows increased device series resistance with the increase in thickness and this is illustrated by the degradation of
threshold voltage from 3.4 V to 3.6 V when EBL layer thickness is increased from 50 nm to 400 nm (as illustrated in
fig.3 (b) & (c). Secondly when the EBL thickness is increased, the radiative recombination rate decreases fivefold as
a function of distance due to lowering of conduction band energy state. This may be due to native point defects such
as zinc interstitials and oxygen vacancies, which leads the Fermi level to shift downwards in acceptor energy state
[17].The doping concentration and composition is fixed at 51016 cm-3 and 10% when the thickness of EBL is
varied.
(a)
(b)
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(c)
(d)
Fig. 4 Simulated (a) emission intensity spectra (b) I-V characteristic (c) radiative recombination rate and (d) internal quantum efficiency
as a function of MgZnO layer thickness of the EBL layer of heterostructure LED
(a)
(b)
(c)
(d)
Fig. 5 Simulated (a) emission intensity spectra (b) I-V characteristic (c) luminous power spectra and (d) internal quantum efficiency as a
function of Mg composition of the HBL layer of heterostructure LED
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Concentration
It is seen from Fig.6 that as the electron doping concentration of the HBL layer is increased from 51016 to 51018
cm-3, a four-fold increment of electroluminescence (EL) intensity is observed. Since on increasing the doping
concentration the carrier injection rate increases, the internal quantum efficiency improves from 50% to 60%. At this
point, it should be noted that the thickness and composition of the HBL layer is held constant at 50 nm and 10%
when its doping concentration is altered.
(a)
(b)
(c)
(d)
Fig.6 Simulated (a) emission intensity spectra (b) I-V characteristic (c) luminous power spectra and (d) internal quantum efficiency as a
function of electron doping concentration of HBL layer of heterostructure LED
1.2
Thickness =50nm
=75nm
=100nm
=200nm
=300nm
=400nm
=500nm
1.0
0.8
0.6
0.4
0.2
0.0
350
400
450
Wavelength(nm)
500
Thickness
From Fig.7 (a), it can be inferred that there is almost five-fold increment of peak emission intensity when the HBL
layer thickness is increased from 50 nm to 500 nm. Similarly, the radiative recombination rate is increased from 2
1028 cm-3/s to 2.5 1028 cm-3/s and device threshold voltage (from 3.3V to 3.6V), is increased for the corresponding
increase in the HBL thickness, as illustrated in Fig.7 (b) and 7 (c). The doping concentration and composition is
fixed at 51016 cm-3 and 10% when the thickness of HBL is varied.
28
2.5x10
Thickness =50nm
=200nm
=400nm
28
2.0x10
28
1.5x10
28
1.0x10
27
5.0x10
0.0
0.4
0.5
0.6
Distance (m)
(a)
(b)
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0.7
(c)
(d)
Fig.7 Simulated (a) emission intensity spectra (b) I-V characteristic (c) radiative recombination rate and (d) internal quantum efficiency
as a function of MgZnO layer thickness of the HBL layer of heterostructure LED
ACTIVE REGION
In the simulation, we have implemented Cd0.15Zn0.85O as the heterostructure LED active region. The active region is
sandwiched between a top p-type MgxZn1-xO electron barrier layer and a bottom n-type MgxZn1-xO hole barrier layer.
The simulated emission spectra for heterostructure LED as a function of active layer parameters at room temperature
are shown in Fig.8. The radiative emission band with a peak at 430 nm originates from the near- band transition in
the Cd0.15Zn0.85O active region. When thickness is increased from 30 nm to 200 nm, carriers effectively confine in
the active region which increases the probability of radiative recombination under forward bias and five times
increment in emission intensity is observed. The threshold voltage also improves from 3.6V to 3.3V when the
thickness is varied.
(a)
(b)
Fig.8 Simulated (a) emission spectra and (b) I-V characteristics for the active layer (Cd0.15Zn0.85O) thickness of heterostructure LED
(a)
(b)
Fig.9 Simulated (a) internal quantum efficiency and (b) luminous power for the active layer (Cd0.15Zn0.85O) thickness of heterostructure
LED
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In Fig.9, as the thickness of active region is increased, there will be additional confinement of charge carriers which
increases the internal quantum efficiency from 30% to 55%. The luminous power increases from 0.1 W to 0.7 W as
the thickness is increased from 30 nm to 200 nm due to enhanced recombination rate in the active region. The other
parameters of heterostructure LED are kept constant when layer thickness is increased.
TOP CONTACT LAYER
The p-ZnO layer has been taken as a top contact layer for heterostructure LED device. Here we have considered
doping concentration and layer thickness parameter variation for the device structure.
Concentration
The EL intensity and threshold voltage increases on increasing the dopant concentration from 51016 to 51018 cm-3.
As more holes are available for recombination with electrons thus carrier injection rate increases [13]. The thickness
is kept constant at 50 nm when doping concentration is altered from 51016 cm-3 to 51018 cm-3 .
(a)
(b)
(c)
(d)
Fig.10 Simulated (a) emission intensity spectra (b) I-V characteristic (c) luminous power spectra and (d) internal quantum efficiency as a
function of hole doping concentration for the top contact layer of heterostructure LED
(a)
(b)
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(c)
(d)
Fig.11 Simulated (a) emission intensity spectra (b) I-V characteristic (c) luminous power spectra and (d) internal quantum efficiency as a
function of layer thickness for the top contact layer of heterostructure LED
Thickness
As seen from Fig.11, the emission intensity increases while threshold voltage and power decreases on increasing the
thickness from 50 nm to 100 nm. Since increases in thickness results in lowering of valance band barrier for hole
injection thus there will be significant increase in quantum efficiency. On increasing thickness, the doping solubility
decreases strong defect related emission arises for p-ZnO layer. During thickness variation doping concentration is
fixed at 51016 cm-3.
BOTTOM CONTACT LAYER
The n-ZnO layer has been taken as a bottom contact layer for heterostructure LED device. Here we have considered
doping concentration and layer thickness parameter variation for the device structure.
Concentration
As mentioned in Fig.12, the emission intensity increases on increasing the doping concentration from 51016 to
51019 cm-3. The threshold voltage characteristic shows only a slight variation from 3.2V to 3.4V while luminous
power increases from 0.1 W to 0.8 W for higher doping concentration. At this point it is noted that thickness is held
constant at 50 nm.
(a)
(b)
(c)
(d)
Fig.12 Simulated (a) emission intensity spectra (b) I-V characteristic (c) luminous power spectra and (d) internal quantum efficiency as a
function of electron doping concentration for the bottom contact layer of heterostructure LED
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Thickness
The EL peak emission in Fig.13 is attributed to radiative electron-hole recombination in ZnO layer, due to large
conduction band offset. As the thickness of ZnO layer is increased from 50 nm to 500 nm, the carriers capture
probability shows a fourfold increment. The doping concentration is kept constant at 51016 cm-3 when the thickness
is varied.
Thickness =50nm
=75nm
=100nm
=200nm
=300nm
=400nm
=500nm
EL Intensity (arb.unit)
2.0
1.5
1.0
0.5
0.0
350
400
450
500
Wavelength (nm)
(a)
(b)
0.30
60
Internal Quantum
Efficiency ( %)
70
Thickness =50nm
=75nm
=100nm
=200nm
=300nm
=400nm
=500nm
0.15
0.00
0
40
30
20
10
0
10
Voltage (V)
Thickness =50nm
=75nm
=100nm
=200nm
=300nm
=400nm
=500nm
50
Current (A mm )
(c)
(d)
Fig.13 Simulated (a) emission intensity spectra (b) I-V characteristic (c) luminous power spectra and (d) internal quantum efficiency as a
function of layer thickness for the bottom contact layer of heterostructure LED
CONCLUSION
We present detailed theoretical investigation of optimized device structure of MgZnO/CdZnO/MgZnO based double
heterostructure bluish LED. The LED emits at 430 nm with an IQE value of ~70% at an anode current of 0.22A at
room temperature. Factors largely affecting the device internal quantum efficiency of double heterostructure LED;
including doping concentration, thickness of active and barrier regions; are numerically examined in detail. Our
work identified several key aspects for developing high quality zinc oxide films and heterostructure design for
device applications. The results shows the potential of ZnO-based material for optical and quantum electronics
applications. Due to its increased lifetime, reduced power consumption and brightness, Blue light emitters are
preferred for displays, scanners, data storage, street lightings and traffic signals. The double heterostructure
approach provides an alternative for achieving robust p-type doping for ZnO-based LED that incorporates CdZnO
active regions with optimized composition and thickness.
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