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    NPN 8050 Ecb

    Uploaded by

    Miguel Angel
    This document provides specifications for the BTN8050A3 general purpose NPN epitaxial planar transistor. Key details include: - It is designed for use in output amplifiers of portable radios in class B push-pull operation. - Features include a high collector current of 1.5A and low VCE(sat). - It provides absolute maximum ratings, typical characteristics, test conditions, and packaging details for the TO-92 transistor.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    NPN 8050 Ecb

    Uploaded by

    Miguel Angel
    624 views4 pages
    This document provides specifications for the BTN8050A3 general purpose NPN epitaxial planar transistor. Key details include: - It is designed for use in output amplifiers of portable radios in class B push-pull operation. - Features include a high collector current of 1.5A and low VCE(sat). - It provides absolute maximum ratings, typical characteristics, test conditions, and packaging details for the TO-92 transistor.

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    transistor

    Original Title

    npn 8050 ecb

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    This document provides specifications for the BTN8050A3 general purpose NPN epitaxial planar transistor. Key details include: - It is designed for use in output amplifiers of portable radios in class B push-pull operation. - Features include a high collector current of 1.5A and low VCE(sat). - It provides absolute maximum ratings, typical characteristics, test conditions, and packaging details for the TO-92 transistor.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    624 views4 pages

    NPN 8050 Ecb

    Uploaded by

    Miguel Angel
    This document provides specifications for the BTN8050A3 general purpose NPN epitaxial planar transistor. Key details include: - It is designed for use in output amplifiers of portable radios in class B push-pull operation. - Features include a high collector current of 1.5A and low VCE(sat). - It provides absolute maximum ratings, typical characteristics, test conditions, and packaging details for the TO-92 transistor.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 4

    Spec. No.

    : C223A3
    Issued Date : 2003.07.30
    Revised Date : 2004.02.26

    CYStech Electronics Corp.

    Page No. : 1/4

    General Purpose NPN Epitaxial Planar Transistor

    BTN8050A3
    Description
    The BTN8050A3 is designed for use in output amplifier of portable radios in class B push pull operation.

    Features

    High collector current , IC = 1.5A


    Low VCE(sat)
    Complementary to BTP8550A3.

    Symbol

    Outline
    BTN8050A3

    TO-92

    BBase
    CCollector
    EEmitter

    ECB

    Absolute Maximum Ratings (Ta=25C)


    Parameter
    Collector-Base Voltage
    Collector-Emitter Voltage
    Emitter-Base Voltage
    Collector Current
    Base Current
    Power Dissipation
    Junction Temperature
    Storage Temperature

    BTN8050A3

    Symbol

    Limits

    Unit

    VCBO
    VCEO
    VEBO
    IC
    IB
    Pd
    Tj
    Tstg

    40
    25
    6
    1.5
    0.5
    625
    150
    -55~+150

    V
    V
    V
    A
    A
    mW
    C
    C

    CYStek Product Specification

    CYStech Electronics Corp.

    Spec. No. : C223A3


    Issued Date : 2003.07.30
    Revised Date : 2004.02.26
    Page No. : 2/4

    Characteristics (Ta=25C)
    Symbol
    BVCBO
    BVCEO
    BVEBO
    ICBO
    IEBO
    *VCE(sat)
    *VBE(sat)
    *VBE(on)
    *hFE1
    *hFE2
    *hFE3
    fT
    Cob

    Min.
    40
    25
    6
    45
    85
    40
    100
    -

    Typ.
    -

    Max.
    100
    100
    0.5
    1.2
    1
    500
    20

    Unit
    V
    V
    V
    nA
    nA
    V
    V
    V
    MHz
    pF

    Test Conditions
    IC=100A
    IC=2mA
    IE=100A
    VCB=35V
    VEB=6V
    IC=800mA, IB=80mA
    IC=800mA, IB=80mA
    VCE=1V, IC=10mA
    VCE=1V, IC=5mA
    VCE=1V, IC=100mA
    VCE=1V, IC=800mA
    VCE=10V, IC=50mA, f=100MHz
    VCB=10V, f=1MHz
    *Pulse Test: Pulse Width 380s, Duty Cycle2%

    Classification Of hFE2
    Rank
    Range

    BTN8050A3

    B
    85~160

    C
    120~200

    D
    160~320

    E
    250~500

    CYStek Product Specification

    CYStech Electronics Corp.

    Spec. No. : C223A3


    Issued Date : 2003.07.30
    Revised Date : 2004.02.26
    Page No. : 3/4

    Characteristic Curves
    Saturation Voltage vs Collector Current

    Current Gain vs Collector Current


    1000

    1000
    Saturation Voltage---(mV)

    Current Gain---HFE

    VCE = 5V

    VCE = 2V

    100

    VCE = 1V

    10

    100

    VCE(SAT) @ IC=20IB

    10
    VCE(SAT) @ IC=10IB

    1
    1

    10
    100
    1000
    Collector Current---IC(mA)

    10000

    Saturation Voltage vs Collector Current

    10000

    On Voltage vs Collector Current

    10000

    1000
    VBE(SAT) @ IC=10IB

    On Voltage---(mV)

    Saturation Voltage---(mV)

    10
    100
    1000
    Collector Current---IC(mA)

    1000

    100

    VBE(ON) @ VCE=1V

    100
    1

    10
    100
    1000
    Collector Current---IC(mA)

    10000

    10
    100
    1000
    Collector Current---IC(mA)

    10000

    Power Derating Curve

    Power Dissipation---PD(mW)

    700
    600
    500
    400
    300
    200
    100
    0
    0

    50

    100

    150

    200

    Ambient Temperature---TA()

    BTN8050A3

    CYStek Product Specification

    Spec. No. : C223A3


    Issued Date : 2003.07.30
    Revised Date : 2004.02.26

    CYStech Electronics Corp.

    Page No. : 4/4

    TO-92 Dimension

    Marking:

    A
    B
    1

    8050

    H
    I

    Style: Pin 1.Emitter 2.Collector 3.Base

    E
    F

    3-Lead TO-92 Plastic Package


    CYStek Package Code: A3

    *: Typical

    Inches
    Min.
    Max.
    0.1704 0.1902
    0.1704 0.1902
    0.5000
    0.0142 0.0220
    *0.0500
    0.1323 0.1480

    DIM
    A
    B
    C
    D
    E
    F

    Millimeters
    Min.
    Max.
    4.33
    4.83
    4.33
    4.83
    12.70
    0.36
    0.56
    *1.27
    3.36
    3.76

    DIM
    G
    H
    I
    1
    2
    3

    Inches
    Min.
    Max.
    0.0142 0.0220
    *0.1000
    *0.0500
    *5
    *2
    *2

    Millimeters
    Min.
    Max.
    0.36
    0.56
    *2.54
    *1.27
    *5
    *2
    *2

    Notes: 1.Controlling dimension: millimeters.


    2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
    3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.

    Material:
    Lead: 42 Alloy ; solder plating
    Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0

    Important Notice:
    All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
    CYStek reserves the right to make changes to its products without notice.
    CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
    CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.

    BTN8050A3

    CYStek Product Specification

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