Motorola Master Selection Guide RF

RF Products
In Brief . . .
While Motorola is considered to be the supermarket for
semiconductor products, there is not a category in which the
selection is more diverse, or more complete, than in products
designed for RF system applications. From MOS, bipolar
power and signal transistors to integrated circuits, Motorolas
RF components cover the entire spectrum from HF to
microwave to personal communications. Yet, product expansion continues not only to keep pace with the progressive
needs of the industry, but to better serve the needs of designers
for a reliable and comprehensive source of supply.
How to Use This Selector Guide

This new selector guide combines the RF products of Motorola
Phoenix, Motorola Toulouse (France), and Motorola Hong Kong.
The products in this guide are separated FIRST into major
categories such as Power FETs, Power Bipolar, Medium
Power Transistors, Small Signal, Monolithic Integrated
Circuits, Power Amplifier Modules and CATV Distribution
Amplifiers. SECOND, within each category parts are listed by
frequency band, except for medium power transistors, small
signal transistors and monolithic integrated circuits, which are
divided by application. Small signal transistor applications are
low noise, linear amplifiers, switches, and oscillators.
Monolithic integrated circuit application groupings are
switching, receiver functions and transmitter functions.
THIRD, within a frequency band, transistors are further
grouped by operating voltage and, finally, output power.
Remember
Applications assistance is only a phone call away call the
nearest Semiconductor Sales office or 1-800-521-6274.
Motorola Master Selection Guide
5.101
Page
RF Discrete Transistors . . . . . . . . . . . . . . . . . . . . . . . . 5.102
RF Power MOSFETs . . . . . . . . . . . . . . . . . . . . . . . . 5.104
RF Power Bipolar Transistors . . . . . . . . . . . . . . . . . 5.107
HF Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.107
VHF Transistors . . . . . . . . . . . . . . . . . . . . . . . . . 5.107
UHF Transistors . . . . . . . . . . . . . . . . . . . . . . . . . 5.108
900 MHz Transistors . . . . . . . . . . . . . . . . . . . . . 5.109
1.5 GHz Transistors . . . . . . . . . . . . . . . . . . . . . 5.1010
Microwave Transistors . . . . . . . . . . . . . . . . . . . 5.1010
Linear Transistors . . . . . . . . . . . . . . . . . . . . . . . 5.1012
RF Medium Power Transistors . . . . . . . . . . . . . . . 5.1014
Discrete Wireless Transmitter Devices . . . . . 5.1015
RF Small Signal Transistors . . . . . . . . . . . . . . . . . 5.1016
Selection by Package . . . . . . . . . . . . . . . . . . . . 5.1017
Plastic SOE Case . . . . . . . . . . . . . . . . . . . . 5.1017
Ceramic SOE Case . . . . . . . . . . . . . . . . . . . 5.1020
Selection by Application . . . . . . . . . . . . . . . . . . 5.1021
Low Noise . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.1021
CATV, MATV and Class A Linear . . . . . . . 5.1022
RF Monolithic Integrated Circuits . . . . . . . . . . . . . . . 5.1023
Switching . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.1024
Antenna Switches . . . . . . . . . . . . . . . . . . . . . . . 5.1024
Receiver Functions . . . . . . . . . . . . . . . . . . . . . . . . 5.1024
General Purpose Integrated Circuits . . . . . . . 5.1024
900 MHz Front End . . . . . . . . . . . . . . . . . . . . . . 5.1024
1.5 2.2 GHz Front End . . . . . . . . . . . . . . . . . . 5.1024
2.4 GHz Front End . . . . . . . . . . . . . . . . . . . . . . 5.1025
Transmitter Functions . . . . . . . . . . . . . . . . . . . . . . 5.1025
General Purpose Integrated Circuits . . . . . . . 5.1025
900 MHz Transmit Chain . . . . . . . . . . . . . . . . . 5.1026
1.5 2.2 GHz Transmit Chain . . . . . . . . . . . . . 5.1027
2.4 GHz Transmit Chain . . . . . . . . . . . . . . . . . . 5.1028
RF Amplifier Modules . . . . . . . . . . . . . . . . . . . . . . . . . 5.1029
Land Mobile/Portable . . . . . . . . . . . . . . . . . . . . . . . 5.1031
Wideband Linear Amplifiers . . . . . . . . . . . . . . . . . 5.1034
TV Transmitters . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.1035
CATV Distribution Amplifiers . . . . . . . . . . . . . . . . . . . 5.1036
Fiber Optic Receivers . . . . . . . . . . . . . . . . . . . . . . 5.1036
Forward Amplifiers . . . . . . . . . . . . . . . . . . . . . . . . . 5.1036
Reverse Amplifiers . . . . . . . . . . . . . . . . . . . . . . . . . 5.1040
RF Products
RF Discrete Transistors
In the following pages, the reader will find the most extensive group of RF Discrete Transistors offered by any semiconductor
manufacturer anywhere in the world today.
From Bipolar to FET, from Low Power to High Power, the user can choose from a variety of packages. They include plastic, metal
can and ceramic that are microstrip circuit compatible or surface mountable. Many are designed for automated assembly
equipment.
Major subheadings are MOSFETs, Power Bipolar and Small Signal.
CASE 145A09
STYLE 1
(.380 STUD)
CASE 145D02
STYLE 1
(.380 SOE)
CASE 21107
STYLE 1, 2
(.380 FLANGE)
CASE 21111
STYLE 1, 2
(.500 FLANGE)
CASE 244
STYLE 1
(.280 STUD)
CASE 249
STYLE 1, 3
(.280 PILL)
CASE 305
STYLE 1
(.204 STUD)
CASE 305A
STYLE 1, 2
(.204 PILL)
CASE 305C
STYLE 1
CASE 305D
STYLE 1
CASE 31601
STYLE 1, 3
(.500 CQ)
CASE 317
STYLE 1, 2
(MACROX)
CASE 317D
STYLE 2
CASE 319
STYLE 1, 2, 3
(CS12)
CASE 319A
STYLE 2
CASE 319B
STYLE 1
CASE 328A03
STYLE 1, 2
CASE 33204
STYLE 1, 2
(.280 STUD)
CASE 332A
STYLE 2
(.280 PILL)
CASE 333
STYLE 1
CASE 333A
STYLE 1, 2
(MAAC PAC)
CASE 336E
STYLE 1
CASE 355C
STYLE 1
CASE 355D
STYLE 1
CASE 355E
STYLE 1
RF Products
5.102
CASE 355H01
STYLE 1
CASE 360B
STYLE 1
(Micro 250)
CASE 360C
STYLE 1
CASE 368
STYLE 2
(HOG PAC)
CASE 375
STYLE 2
CASE 375A
STYLE 1
CASE 375B
STYLE 2
(Micro 860)
CASE 376B
STYLE 1
CASE 376C
STYLE 1
CASE 391
STYLE 1
CASE 394
STYLE 1
CASE 395B
STYLE 1
CASE 395C
STYLE 1, 2
CASE 395D
STYLE 1
CASE 398
STYLE 1
CASE 400
STYLE 1
CASE 430
STYLE 2
CASE 430B
STYLE 1
CASE 451
STYLE 1
CASE 451A
STYLE 1
CASE 458
STYLE 1
CASE 458A
STYLE 1
CASE 466
STYLE 1
(PLD 1.5)
CASE 744A
STYLE 1, 2
CASE 751
STYLE 1
(SO8)
5.103
RF Products
RF Power MOSFETs
Motorola RF Power MOSFETs are constructed using a planar process to enhance manufacturing repeatability. They are
Nchannel field effect transistors with an oxide insulated gate which controls vertical current flow.
Compared with bipolar transistors, RF Power FETs exhibit higher gain, higher input impedance, enhanced thermal stability and
lower noise. The FETs listed in this section are specified for operation in RF Power Amplifiers and are grouped by frequency range
of operation and type of application. Arrangement within each group is first by order of voltage then by increasing output power.
Table 1. To 54 MHz
Designed for broadband HF/SSB commercial and industrial applications. The high gain, broadband performance and linear
characterization of this device makes it ideal for largesignal, commonsource amplifier applications in 12.5 volt mobile and
amateur radio transmitters.
Device
Pout
Output Power
Watts
Pin
Input Power
Typical
Watts
Gps (Typ)/Freq.
dB/MHz
Eff., Typ
%
0.8
16/54
45
Typical IMD
d3
d5
dB
dB
JC
C/W
Package/Style
1.0
21111/2
VCC = 12.5 Volts, Class AB

MRF255
55
30
30
Table 2. To 150 MHz HF/SSB

For military and commercial HF/SSB fixed, mobile and marine transmitters.
Device
Pout
Output Power
Watts
Pin
Input Power
Typical
Watts
Gps
Typical
Gain dB @
30 MHz
d3
dB
d11
dB
JC
C/W
Package/Style
P k
/S l
4.7
15
30
60
0.6
21111/2
0.5
3
12
6
18
17
17
20
35
32
25
25
60
60
1.5
0.6
0.13
0.13
21107/2
21111/2
368/2
368/2
Typical IMD
VDD = 28 Volts, Class AB

MRF140
150

MRF148
MRF150
MRF154
MRF157
30
150
600
600
Table 3. To 225 MHz VHF AM/FM

For VHF military and commercial aircraft radio transmitters.
Device
Gps (Typ)/Freq.
dB/MHz
Efficiency
Typical
%
JC
C/W
0.2
0.38
1.2
0.75
4
4
4
8.3
15
8
30
14/150
16/150
14/150
16/150
13/150
13/150
14/225
11.8/150
10/175
14/225
10/175
55
60
54
60
65
65
65
60
55
65
55
10
3.2
1.8
1.8
0.8
0.8
0.65
0.65
0.6
0.44
0.35
21107/2
21107/2
319B/1
21107/2
21111/2
31601/2
333/1
21111/2
21111/2
375/2
375/2
7.5
4
7.5
13/175
17/225
16/175
45
55
55
0.6
0.44
0.35
21111/2
375/2
375/2
Pin
Input Power
Typical
Watts
5
15
30
30
80
80
100
125
150
200
300
150
200
300
Pout
Output Power
Watts
Package/Style

MRF134
MRF136
MRF136Y
MRF137
MRF173
MRF173CQ
MRF175LV
MRF174
MRF141
MRF175GV
MRF141G

MRF151
MRF176GV
MRF151G
RF Products
5.104
Table 4. To 500 MHz VHF/UHF AM/FM

For VHF/UHF military and commercial aircraft radio transmitters.
Device
Pout
Output Power
Watts
Pin
Input Power
Typical
Watts
Gps (Typ)/Freq.
dB/MHz
Eff., Typ
%
JC
C/W
20/400
17/400
17/400
10/400
12/400
12/400
9/500
11/500
55
50
55
55
60
55
55
55
13.2
7.2
2.5
0.65
0.65
0.44
0.65
0.44
305A/2
249/3
319/3
333/1
744A/2
375/2
333/1
375/2
50
0.44
375/2
Package/Style

MRF158
MRF160
MRF166C
MRF175LU
MRF177
MRF175GU
MRF275L(46a)
MRF275G(46a)
2
4
20
100
100
150
100
150
0.02
0.08
0.4
1008
6.4
9.5
12.5
11.9

MRF176GU
150
14/400
Table 5. To 520 MHz

Designed for broadband VHF & UHF commercial and industrial applications. The high gain and broadband performance of
these devices make them ideal for largesignal, commonsource amplifier applications in 12.5/7.5 volt mobile, portable and
base station operation.
Device
Pout
Output Power
Watts
Pin
Input Power
Typical
Watts
Gps (Typ)/Freq.
dB/MHz
Eff., Typ
%
JC
C/W
Package/Style
PLD1.5
VDD = 7.5 Volts, Class AB LDMOS Die

MRF1507 (46b)
0.630
11
65
2.0
3
7
0.27
0.5
10.5/512
11.5/512
50
55
14
5
1.1
6.3
11.5/512
7.5/512
55
55

MRF5003(18a)
MRF5007(18a)
430/2
430B/1

MRF5015
MRF5035
15
35
3.5
1.8
319/3
31601/3
2.5
2.2
2.2
1.2
1.2
0.6
0.55
458/1
360B/1
360C/1
360B/1
360B/1
Similar to 375B/2
Singleended
Device
520 MHz, VDD = 48 Volts, VHF/UHF for Conventional FM, Class AB LDMOS Die
MRF190S (46c)
MRF191 (46c)
MRF191S (46c)
MRF192 (46c)
MRF192S (46c)
MRF193 (46e)
MRF194 (46e)
15 CW
30 CW
30 CW
60 CW
60 CW
120 CW
150 CW
0.75
1.5
1.5
3.0
3.0
6.0
7.5
13/520
13/520
13/520
13/520
13/520
13/520
13/520
55
55
55
55
55
55
55
(18)Tape and Reel Packaging Option Available by adding suffix: a) R1 = 500 units; b) R2 = 2,500 units; c) T1 = 3,000 units; d) T3 = 10,000 units; e) R2 = 1,500 units;
f) T1 = 1,000 units.
(46)To be introduced: a) 1Q97; b) 2Q97; c) 3Q97; d) 3Q97; e) 4Q97
5.105
RF Products
RF Power MOSFETs
(continued)
Table 6. To 900 MHz
Device
Pout
Output Power
Watts
Pin
Input Power
Typical
Watts
Gps (Typ)/Freq.
dB/MHz
Eff., Typ
%
JC
C/W
Package/Style
900 MHz, VDD = 48 Volts, Class AB LDMOS Die

MRF195S (46c)
MRF196 (46e)
MRF196S (46e)
MRF197 (46c)
MRF197S (46c)
MRF198 (46e)
15 PEP
30 PEP
30 PEP
60 PEP
60 PEP
90 PEP
0.75
1.5
1.5
3.0
3.0
4.5
13/900
13/900
13/900
13/900
13/900
13/900
33
33
33
33
33
33
2.5
2.2
2.2
1.2
1.2
1.0
MRF199 (46e)
150 PEP
15
10/900
33
0.55
Gps (Typ)/Freq.
dB/MHz
Eff., Typ
%
JC
C/W
18/960
17/960
55
55
10
6.0
458A/1
458A/1
14/1000
14/1000
14/1000
14/1000
14/1000
14/1000
15/1000
15/1000
14/1000
12/1000
40
40
60
60
60
60
60
60
55
55
3.6
3.6
1.75
1.75
1.5
1.5
1.1
1.1
0.7
0.6
458/1
458A/1
360B/1
360C/1
360B/1
360C/1
360B/1
360C/1
375B/2
375B/2
3.6
360B/1
458/1
360B/1
360C/1
360B/1
360C/1
Singleended
Device
Singleended
Device
Table 7. To 1.0 GHz

For HF/VHF/UHF commercial and military radio transmitters.
Device
Pout
Output Power
Watts
Pin
Input Power
Typical Watts
Package/Style
1.0 GHz, VDD = 26 Volts, Class AB LDMOS Die

MRF65225 (46b)
MRF652210 (46b)
5
10
0.08
0.20
1.0 GHz, VDD = 28 Volts, Class AB LDMOS Die

MRF181S (46a)
MRF181Z (46b)
MRF182
MRF182S
MRF183
MRF183S
MRF184
MRF184S
MRF185 (3)
MRF186 (3,46b)
4
4
30
30
45
45
60
60
85
120
0.16
0.16
1.2
1.2
1.8
1.8
1.9
1.9
3.4
7.6
Table 8. To 1.6 GHz

1.6 GHz, VDD = 28 Volts, Class AB, Characterized for INMARSAT UplinksLDMOS Die
MRF3010 (46b)
10
0.95
11/1600
57
(3)Internal Impedance Matched Push-Pull Transistors

New Product
RF Products
5.106
RF Power Bipolar Transistors

Motorolas broad line of bipolar RF power transistors are characterized for operation in RF power amplifiers. Typical applications
are in base stations, military and commercial landmobile, avionics and marine radio transmitters. Groupings are by frequency band
and type of application. Within each group, the arrangement of devices is by major supply voltage rating, then in the order of
increasing output power. All devices are NPN polarity except where otherwise noted.
HF Transistors
Table 1. 1.5 30 MHz, HF/SSB
Designed for broadband operation, these devices feature specified Intermodulation Distortion at rated power output.
Applications include mobile, marine, fixed station, and amateur HF/SSB equipment, operating from 12.5, 13.6, 28, or 50 volt
supplies.
Device
Pout
Output Power
Watts
Pin (Max)
Input Power
Watts
GPE (Min)
Gain @ 30 MHz
dB
JC
C/W
Package/Style
VCC = 12.5 or 13.6 Volts, Class AB

MRF421
100 PEP/CW
10
10
0.6
21111/1
25 PEP/CW
150 PEP/CW
0.16
15
22
10
2.5
0.6
21107/1
21111/1
150 PEP/CW
250 PEP/CW
7.5
15.7
13
12
0.8
0.6
21111/1
21111/1
VCC = 28 Volts, Class AB

MRF426
MRF422

MRF429
MRF448
Table 2. 14 30 MHz, CB/Amateur Band

These HF transistors are designed for economical, highvolume use in CW, AM and SSB applications.
MRF455
MRF454
60
80
3
5
13
12
1
0.7
21107/1
21111/1
Pin (Max)
Input Power
Watts
GPE (Min)
Gain @ 50 MHz
dB
JC
C/W
Package/Style
5.6
11
0.7
21111/1
Table 3. 27 50 MHz, LowBand FM Band

For use in the FM LowBand, for Mobile communications.
Device
Pout
Output Power
Watts

MRF492
70
VHF Transistors
Table 4. 30 200 MHz Band
Designed for Military Radio and Commercial Aircraft VHF bands, these 28volt devices include the allgold metallized
MRF314/16/17 highreliability series.
Device
Pout
Output Power
Watts
Pin (Max)
Input Power
Watts
GPE (Min)/Freq.
Power Gain
dB/MHz
JC
C/W
Package/Style
3
8
12.5
10/150
10/150
9/150
2.2
0.8
0.65
21107/1
31601/1
31601/1

MRF314
MRF316(2)
MRF317(2)
30
80
100
(2)Internal Impedance Matched
5.107
RF Products
VHF Transistors
(continued)
Table 5. 136 174 MHz High Band

The workhorse VHF FM HighBand is served by Motorola with the broadest range of devices and package combinations
in the industry.
Device
Pout
Output Power
Watts
Pin (Max)
Input Power
Watts
GPE (Min)
Gain @ 175 MHz
dB
JC
C/W
Package/Style
0.016
0.11
0.95
3
3
14.3
5
15
18(19)
11.5
12
10
10
4.5
9
7
125(1)
25
4
1.6
1.8
2.2
2.2
0.7
751/1
317D/2
244/1
21107/1
145A09/1
21107/1
145A09/1
31601/1
VCC = 12.5 Volts, Class C

MRF4427(18b)
MRF553
MRF2628
MRF1946
MRF1946A
MRF224
MRF240
MRF247 (2)
1
1.5
15
30
30
40
40
75
UHF Transistors
Stringent requirements of the UHF Military band are met by MRF325, 326, 327, 329 and 2N6439 types, with allgold metal
systems, specified ruggedness and programmed wirebond construction, to assure consistent input impedances for internally
matched parts.
Device
Pout
Output Power
Watts
Pin (Max)
Input Power
Watts
GPE (Min)
Gain @ 400 MHz
dB
30
40
80
100
125
4.3
5
14.9
20
19.8
8.5
9
7.3
7
8
JC
C/W
Package/Style
VCC = 28 Volts, Class C

MRF325(2)
MRF326(2)
MRF327(2)
MRF329(2)
MRF392(3)
2.2
1.6
0.7
0.7
0.7
31601/1
31601/1
31601/1
333/1
744A/1

Similar to the 100 400 MHz transistors, these devices have bandwidth capabilities operating up to 500 MHz. All have nitride
passivated die, gold metal systems, specified ruggedness and controlled wirebond construction to meet the stringent
requirements of military space applications.
Device
Pout
Output Power
Watts
Pin (Max)
Input Power
Watts
GPE (Min)/Freq.
Power Gain
dB/MHz
JC
C/W
1
10
20
100
0.03
0.62
2
18
15/400
12/400
10/400
7.5/500
28.5
6.4
3.2
0.7
Package/Style
VCC = 28 Volts, Class C

MRF313
MRF321
MRF323
MRF393(3)
305A/1
244/1
244/1
744A/1
(1)R
JA. Thermal Resistance Junction to Ambient.
f) T1 = 1,000 units.
(19)Typical
RF Products
5.108
UHF Transistors
(continued)

Higher power output devices in this UHF power transistor series feature internally inputmatched construction, are designed
for broadband operation, and have guaranteed ruggedness under output mismatch and RF overdrive conditions. Devices
are specified for handheld, mobile and base station operation.
Device
Pout
Output Power
Watts
Pin (Max)
Input Power
Watts
GPE (Min)/Freq.
Power Gain
dB/MHz
JC
C/W
0.6
1.5
5
5
10
10
15
15
25
50
65
0.03
0.15
0.5
0.5
2
2
2.5
2.5
5.9
15.8
25
13/500
10/470
10/512
10/512
7/512
7/512
7.8/470
7.8/512
6.2/470
5.0/512
4.15/512
40
25
7
7
4
4
4
4
1.7
1.3
1
Package/Style
VCC = 12.5 Volts, Class C

MRF581(4)
MRF555
MRF652
MRF652S
MRF653
MRF653S
MRF641(2)
MRF654(2)
MRF644(2)
MRF650(2)
MRF658(2)
Device
Pout
Output Power
Watts
1.5
15
50
317/2
317D/2
244/1
249/1
244/1
249/1
31601/1
244/1
31601/1
31601/1
31601/1
Class
Pin (Max)
Input Power
Watts
GPE (Min)/Freq.
Power Gain
dB/MHz
JC
C/W
Package/Style
A
AB
AB
0.075
1.2
6
13/470
11/470
9/470
21
7.0
1.2
249/1
319/2
333A/2
VCC = 24 Volts
TP5002S
TP5015
TP5051
900 MHz Transistors

Designed specifically for the 900 MHz mobile radio band, MRF840 through MRF847 devices offer superior gain and
ruggedness, using the unique CS12 package, which minimizes commonelement impedance, and thus maximizes gain
and stability. Devices are listed for mobile and base station applications.
Device
Pout
Output Power
Watts
Pin (Max)
Input Power
Watts
GPE (Min)/Freq.
Power Gain
dB/MHz
JC
C/W
0.08
0.06
0.11
0.11
0.23
2.5
5
16
8/870
10(19)/870
8/870
8/870
8/870
6/870
6/870
4.5/870
50
40
40
45
25
3.1
1.5
1
Package/Style
VCC = 12.5 Volts Class C Si Bipolar

MRF559(5)
MRF581(5)
MRF837(5)
MRF8372R1(5) (18a,b)
MRF557(5)
MRF840(2)(6)
MRF842(2)(6)
MRF847(2)(6)
0.5
0.6
0.75
0.75
1.5
10
20
45
317/2
317/2
317/1
751/1
317D/2
319/1
319/1
319/1

(4)Small signal gain. P is Typ.
o
(5)Common Emitter Configuration
(6)Common Base Configuration
f) T1 = 1,000 units.
(19)Typical
5.109
RF Products
900 MHz Transistors
(continued)
Table 9. 870 960 MHz Band (continued)
Device
Pout
Output Power
Watts
Class
Pin(Max)
Input Power
Watts
Gp (Min)/Freq.
Power Gain
dB/MHz
AB
AB
AB
AB
AB
AB
C
C
AB
AB
AB
C
0.25
0.3
0.28
0.63
0.63
1.0
2
6
3
3
7
12
9/960
10/900
11.5/960
9/900
9/900
10/960
8.5/900
7/900
10/900
10.5/900
7/960
7/900
21
7
5
7
7
5.0
3.5
1.5
1.7
1.7
2.3
1
305C/1
305E/1
319/2
319/2
319A/2
319/2
319/1
319/1
395B/1
395B/1
319/2
333A/1
AB
AB
AB
AB
26/50
26/200
18
24
10/960
8.5/960
7.5/960
8/900
3.8
1.3
0.7
0.8
319/2
333A/2
375A/1
375A/1
Pout
Output Power
Watts
Class
Eff. (Min)
%
Gp (Min)/Freq.
Power Gain
dB/MHz
JC
C/W
2
6
30
C
C
C
40
40
40
8.4/1600
7.4/1600
7.5/1600
15
6.8
1.7
JC
C/W
Package/Style
VCC = 24 Volts Si Bipolar

TP3007S
MRF896
TP3008
MRF891
MRF891S
TP3021
MRF892(2)
MRF894(2)
MRF897(3)
MRF897R(3)
TP3034
MRF898(2)
2
3
4
5
5
10
14
30
30
30
35
60
VCC = 26 Volts Si Bipolar

MRF6409(46a)
MRF6414
TP3069
MRF899(3)
20
50
100
150
1.5 GHz Transistors

Device
MRA1600002
MRF16006
MRF16030
Package/Style
394/1
395C/2
395C/2
Microwave Transistors
Table 11. LBand Pulse Power
These products are designed to operate in short pulse width, 10 s, low duty cycle, 1%, power amplifiers operating in the
960 1215 MHz band. All devices have internal impedance matching. The prime application is avionics equipment for
distance measuring (DME), area navigation (TACAN) and interrogation (IFF).
Device
Pout
Output Power
Watts
Pin(Max)
Input Power
Watts
GP (Min)
Gain @ 1090 MHz
dB
JC
C/W
Package/Style
0.02
0.02
10
10
25
25
33204/2
332A/2
0.2
0.2
0.4
0.4
10
10
10
10
25
25
25
25
33204/1
332A/1
33204/1
332A/1
VCC = 18 Volts Class A & AB Common Emitter

MRF1000MA
MRF1000MB
0.2
0.2
VCC = 35 Volts Class B & C Common Base

MRF1002MA
MRF1002MB
MRF1004MA
MRF1004MB
2
2
4
4

RF Products
5.1010
Microwave Transistors
(continued)
Table 11. LBand Pulse Power (continued)
Device
Pout
Output Power
Watts
Pin(Max)
Input Power
Watts
GP (Min)
Gain @ 1090 MHz
dB
JC
C/W
Package/Style
1.5
1.5
3.5
3.5
9
9
25
25
10
10
10
10
10
10
7.8
7.8
10
10
5
5
0.6
0.6
0.3
0.3
33204/1
332A/1
33204/1
332A/1
33204/1
332A/1
33204/1
332A/1
VCC = 50 Volts Class C Common Base

MRF1015MA
MRF1015MB
MRF1035MA
MRF1035MB
MRF1090MA
MRF1090MB
MRF1150MA
MRF1150MB
15
15
35
35
90
90
150
150
Table 12. LBand Long Pulse Power

These products are designed for pulse power amplifier applications in the 960 1215 MHz frequency range. They are
capable of handling up to 10 s pulses in long pulse trains resulting in up to a 50% duty cycle over a 3.5 millisecond interval.
Overall duty cycle is limited to 25% maximum. The primary applications for devices of this type are military systems,
specifically JTIDS and commercial systems, specifically Mode S. Package types are hermetic.
Device
Pout
Output Power
Watts
Pin(Max)
Input Power
Watts
GPB (Min)
Gain @ 1215 MHz
dB
JC
C/W
0.71
8.5
336E/1
30
120
3
19
10
8
3
0.6
376B/1
355C/1
70
150
350
500
500
7
15
44
63
63
10(7)
10(7)
9(7)
9(7)
9(7)
0.4
0.25
0.11
0.12
0.12
Package/Style

MRF10005

MRF10031
MRF10120
VCC = 50 Volts
MRF10070
MRF10150
MRF10350
MRF10500
MRF10501
376C/1
376B/1
355E/1
355D/1
355H/1
(7)Typical @ 1090 MHz
5.1011
RF Products
Linear Transistors
The following sections describe a wide variety of devices specifically characterized for linear amplification. Included are medium
power and high power parts covering frequencies from 100 MHz 4 GHz.
Table 13. To 1 GHz, Class A
These devices offer a selection of performance and price for linear amplification to 1 GHz. The MRA prefix parts are input
matched and feature high overdrive and extreme ruggedness capability.
Device
Po @ 1 dB
Comp. Point
Watts
GSS (Min)/Freq.
Small Signal Gain
dB/MHz
Bias
Point
(Vdc/A)
3.5
7
14
10/1000
9/1000
8/1000
19/0.6
19/1.2
19/2.4
Pout
Output Power
Watts
Gp (Min)/Freq.
Power Gain
dB/MHz
Bias Point
Per Side
(Vdc/MA)
JC
C/W
Package/Style
28/120
1.4
39101/1
JC
C/W
Package/Style
VCC = 19 Volts
MRA10003.5L
MRA10007L
MRA100014L
Device
8
4
2.1
145A09/1
145D02/1
145D02/1
VCC = 28 Volts
MRA051050H
50
7/1000
Table 14. UHF Ultra Linear For TV Applications

The following devices have been characterized for ultralinear applications such as lowpower TV transmitters in Band IV
and Band V. Each features diffused ballast resistors and an allgold metal system to provide enhanced reliability and
ruggedness.
Device
Pref(Min)
Watts
GP (Min)/Freq.
Small Signal Gain
dB/MHz
3 Tone
IMD(8)
dB
JC
C/W
0.5
1
4
11.5/860
10.5/860
7/860
58
58
60
20
9
5
Package/Style
VCC = 20 Volts, Class A

TPV596A
TPV597
TPV598
Device
Pout
Output Power
Watts
Class
Pin(Max)
Input Power
Watts
Gp (Min)/Freq.
Power Gain
dB/MHz
A
A
A
A
A
A
A
0.4
0.29
0.29
0.46
0.46
8
4.5
12.5/900
11/900
11/900
11.5/900
11.5/900
9.5/900
9/900
244/1
244/1
244/1
JC
C/W
Package/Style
VCE = 24 Volts Class A

MRF857S
MRF858
MRF858S
MRF859
MRF859S
MRF861
MRF862
2.1 (CW)
3.6 (CW)
3.6 (CW)
6.5 W (CW)
6.5 W (CW)
27 (CW)
36 (CW)
8.4
6.9
6.9
3.9
3.9
0.92
0.75
305D/1
319/2
319A/2
319/2
319A/2
375A/1
375A/1
(8)Vision Carrier: 8 dB; Sound Carrier: 7 dB; Sideband Carrier: 16 dB
RF Products
5.1012
Linear Transistors
(continued)
Table 14. UHF Ultra Linear For TV Applications (continued)

Pref(Min)
Watts
Device
GP (Min)/Freq.
Small Signal Gain
dB/MHz
3 Tone
IMD(8)
dB
JC
C/W
Package/Style
VCC = 25 Volts, Class A

TPV695A
TPV7025
TPV6030
14
25
20/35(11)
9.5/860
8.5/860
9.5/860
47
45
51/
2.5
1.5
1.1
395B/1
398/1
375A/1
0.7
398/1

100(11)
TPV8100B
8.5/860
Table 15. Microwave Linear for PCN Applications

The following devices have been developed for linear amplifiers in the 1.5 2 GHz region and have characteristics
particularly suitable for PDC, PCS or DCS1800 base station applications.
Device
Pout
Watts
Bias
Point
Vdc/mA
Gain (Typ)/Freq
dB/MHz
JC
C/W
20/80
10/1880
30
305C/1
AB
AB
AB
A, AB
A, AB
A, AB
A, AB
A, AB
A, AB
A, AB
AB
26/40
26/150
26/100
26/125
26/200
26/200
26/250
26/
26/200
26/200
26/400
10/1880
8.5/1880
8.8/1880
9/1490
10/1490
10/1490
7.5/1490
9/2000
9/2000
9/2000
5
1.4
2.8
1.4
0.7
0.7
0.7
0.7
0.7
.35
319/2
395C/1
395C/1
395C/1
451/1
451A/1
375A/1
395D/1
451/1
451A/1
TBD
A, AB
A, AB
A, AB
A, AB
AB
AB
A, AB
A, AB
A, AB
A, AB
A, AB
A, AB
26/
26/
26/
26/
26/70
26/130
26/75
26/75
26/200
26/200
26/500
26/500
16/2000
16/2000
13.6/2000
13.6/2000
12/2000
11/2000
13/2000
13/2000
11.5/2000
11.5/2000
11.4/2000
11.4/2000
10
10
8.75
8.75
10.25
6.0
2.9
2.9
2.0
2.0
.73
.73
458/1
458A/1
458/1
458A/1
458A/1
458A/1
458/1
458A/1
360B/1
360C/1
465/1
465A/1
Class
Package/Style
VCC = 20 VoltsBipolar Die

MRF6401(12)
0.5
VCC = 26 VoltsBipolar Die

MRF6402(13)
MRF6404(16)
MRF6408
MRF15030
MRF15060
MRF15060S
MRF15090
MRF20030(46a)
MRF20060
MRF20060S
MRF20120(46b)
4.5
30
12
30
60
60
90
30
60
60
120
VDD = 26 VoltsLDMOS Die

MRF280S(46b)
MRF280Z(46b)
MRF281S(46b)
MRF281Z(46b)
MRF65255(46b)
MRF652510(46b)
MRF282S(46a)
MRF282Z(46a)
MRF284 (46b)
MRF284S(46b)
MRF286(46b)
MRF286S(46b)
2
2
4
4
5
10
10
10
30
30
60
60

(11)Output power at 1 dB compression in Class AB
(12)Formerly known as TP4001S
(13)Formerly known as TP4004
(16)Formerly known as TP4035
New Product
5.1013
RF Products
RF Medium Power
Transistors
CASE 318A
STYLE 2
(SOT143)
CASE 34503
(SOT89)
CASE 449
(PLD1)
CASE 751
(SO8)
RF Products
RF Medium Power Transistors are used in portable

transmitter applications and low voltage drivers for higher
power devices. They can be used for analog cellular, GSM and
the newer digital handheld cellular phones. GaAs, LDMOS
and Bipolar devices are available. RF Medium Power
Transistors are supplied in industry standard SOT packages
as well as Motorolas high performance PLD line of surface
mount power RF packages. Other applications include
talkback pagers, wireless modems and LANs, cable modems,
highspeed drivers and instrumentation.
5.1014
RF Medium Power Transistors

Discrete Wireless Transmitter Devices
Device
Freq.
MHz
VDD
V
Typical
Output Power
dBm
Typical Drain
Eff.
%
Typical
Gain
dB
Semiconductor
Technology
850
3.5
31.0
70
11
GaAs PHEMT
PLD1
900
900
4.8
4.8
31.5
34.0
65
60
9.5
8
LDMOS
LDMOS
PLD1
PLD1
850
900
900
900
900
900
5.8
5.8
5.8
5.8
5.8
5.8
31.5
23.5
22
30
30
31.5
60
60
60
60
55
60
8.5
10.5
15
11
10
11
LDMOS
LDMOS
GaAs MAFET
LDMOS
LDMOS
LDMOS
Package
3.5 V Applications
MRF9822T1(18f,46a)
4.8 V Applications
MRF9242T1(18f,46b)
MRF9282T1(18f,46b)
5.8 V Applications
MXR9745T1(18f,46a)
MRF9251T1(18c,46b)
MRF9811T1(18c,46b)
MRF9742(18a,b,46b)
MRF9745T1 (18f,46a)
MRF9762(18a,b, 46b)
SOT89
SOT143
SOT143
SO8
PLD1
SO8
f) T1 = 1,000 units.
5.1015
RF Products
RF Small Signal
Transistors
Motorolas broad line of RF Small Signal Transistors includes
NPN and PNP Silicon Bipolar Transistors characterized for
low noise amplifiers, mixers, oscillators, multipliers,
nonsaturated switches and lowpower drivers.
CASE 2904
STYLE 2
(TO226AA)
CASE 244A
STYLE 1
CASE 317
STYLE 2
(MACROX)
CASE 317A
STYLE 2
(MACROT)
CASE 317D
STYLE 2
(POWER MACRO)
CASE 31808
STYLE 6
(SOT23)
CASE 318A
STYLE 1
LOW PROFILE
(SOT143)
CASE 419
STYLE 3, 6
(SC70/SOT323)
CASE 419B
STYLE 16, 17
(SC70ML/SOT323)
CASE 751
STYLE 1
(SO8)
RF Products
These devices are available in a wide variety of package

types: plastic MacroX and MacroT, ceramic and surface
mounted. Most of these transistors are fully characterized with
sparameters.
5.1016
RF Small Signal Transistors

8
RF Small Signal Transistor

Gain Characteristics
14
12
15
16
7
f T, GAIN BANDWIDTH PRODUCT (GHz)
13
Curve numbers apply to transistors

listed in the subsequent tables.
Selection by Package
In smallsignal RF applications, the package style is often
determined by the end application or circuit construction
technique. To aid the circuit designer in device selection, the
Motorola broad range of RF smallsignal amplifier transistors
is organized by package. Devices for other applications such
as oscillators or switches are shown in the appropriate
preceding tables. These devices are NPN polarity unless
otherwise designated.
4
11
6
3
10
3
0
0.1
2.5
10
15
20
30
50
75 100
150
IC, COLLECTOR CURRENT (mA)
Plastic SOE Case

Table 1. Plastic SOE Case
D i
Device
GainBandwidth
@
fT
Typ
IC
GHz
mA
Maximum Ratings
NFmin @ f
G i
Gain
Curve
C
No.
Page
g
5.1017
Typ
T
dB
MH
MHz
Typ
T
dB
MH
MHz
V(BR)CEO
(BR)CEO
V lt
Volts
IC
mA
A
P k
Package
Case 2904/1,2, TO226AA

LP1001
10
2.7
500
12.5
1000
15
LP1001A
10
3.2
1000
12.5
1000
15
MPS911(29)
30
1.7
500
16.5
500
12
40
MPS571
50
12
500
14
500
10
80
(29)Packaging Options Available in Tape and Reel and Fan Fold Box
5.1017
RF Products
Selection by Package (continued)

Table 1. Plastic SOE Case (continued)
D i
Device
GainBandwidth
@
fT
Typ
IC
GHz
mA
Maximum Ratings
Curve
C
No.
g
Page
5.1017
NFmin @
G i @
Gain
Typ
T
dB
MH
MHz
Typ
T
dB
MH
MHz
V(BR)CEO
(BR)CEO
Volts
V lt
IC
mA
A
30
P k
Package
Case 317/2 MACROX

MRF901
4.5
15
1000
12
1000
15
MRF571
50
12
1.5
1000
12
1000
10
70
MRF951
30
16
2.1
2000
12.5
2000
10
100
MRF559
100
10
13
512
18
150
MRF581
75
11
500
15.5
500
18
200
MRF581A
75
11
1.8
500
15.5
500
15
200
MRF837
75
11
10
870
16
200
BFR90
14
2.4
500
18
500
15
30
BFR96
4.5
50
500
14.5
500
15
100
MRF553
13
175
16
500
MRF555
12.5
470
16
400
MRF557
870
16
400
MMBR521LT1(17)(18c)
MMBR931LT1 (18c)
3.4
35
1.5
500
15
500
10
70
4.3
1000
10
1000
MMBR5031LT1(18c)
BFS17LT1(18c)
2.5
450
17
450
10
20
1.3
25
15
BFR92ALT1(18c)
MMBR901LT1(18c)
4.5
14
15
15
25
15
1.9
1000
1000
15
30
BFR93ALT1(18c)
MMBR920LT1(18c)
3.4
30
2.5
30
12
35
4.5
14
2.4
500
15
500
15
35
MMBR5179LT1(18c)
MMBR941LT1(18c,d)
1.4
15
200
12
50
15
15
2.1
2000
8.5
2000
10
50
MMBR911LT1(18c)
MMBR571LT1(18c)
30
500
17
500
12
60
50
12
500
16.5
500
10
80
MMBR951LT1(18c)
MMBR951ALT1(18c)
30
16
2.1
2000
7.5
2000
10
100
30
16
2.1
2000
7.5
2000
10
100
Case 317A/2 MACROT
Case 317D/2
Case 31808/6 SOT23
12
(17)PNP
f) T1 = 1,000 units.
RF Products
5.1018
(continued)
Table 1. Plastic SOE Case (continued)
Device
D
i
GainBandwidth
@
fT
Typ
IC
GHz
mA
Maximum Ratings
Curve
C
No.
g
Page
5.1017
NFmin @
G i @
Gain
Typ
T
dB
MH
MHz
Typ
T
dB
MH
MHz
V(BR)CEO
(BR)CEO
Volts
V lt
IC
mA
A
Package
P
k
Case 318A/1 SOT143

MRF5711LT1(18c)
MRF5211LT1(17)(18c)
MRF9331LT1(18c)
MRF9011LT1(18c)
50
12
1.6
1000
13.5
1000
10
70
50
2.8
1000
11
1000
10
70
2.5
1000
12.5
1000
3.8
15
2.3
1000
10.2
1000
15
30
MRF9411LT1(18c)
MRF9411BLT1(18c)
15
15
2.1
2000
9.5
2000
10
50
15
15
2.1
2000
9.5
2000
10
50
MRF5811LT1 (18c)
MRF9511LT1(18c)
75
11
2.0
500
18.4
500
18
200
30
16
2.1
2000
2000
10
100
MRF9511ALT1(18c)
30
16
2.1
2000
2000
10
100
10
1000
12
60
4.2
Case 419/3 SC70/SOT323

MRF917T1 (18c)
MRF577T1 (18c)
20
2.3
1000
40
12
1.5
1000
10
1000
10
80
MRF927T1(18c)
MRF947T1(18c,d)
14
1.7
1000
9.8
1000
10
10
15
15
2.1
2000
10.5
1500
10
50
MRF947AT1(18c)
MRF947BT1(18c,d)
15
15
2.1
2000
10.5
1500
10
50
15
15
2.1
2000
10.5
1500
10
50
MRF957T1(18c)
30
16
2.0
2000
1500
10
100
15
2.1
2000
10.5
1500
10
50
Case 419/6 SC70/SOT323

MRF947RT3(18d)
Case 419B01 SC70ML/SOT363

MRF2947AT1(18c)
15
15
1.5
1000
14
1000
10
50
MRF2947RAT1 (18c)
15
15
1.5
1000
14
1000
10
50
MRF5943(18a,b)
MRF3866R2(18b)
1.5
35
3.4
200
12
250
30
400
0.8
50
10.5
400
30
400
MRF4427(18b)
MRF5812(18a,b)
1.6
50
18
175
20
400
5.5
75
11
500
15.5
500
15
200
MRF8372R1(18a,b)
75
11
10
870
16
200
Case 751/1 SO8
(17)PNP
f) T1 = 1,000 units.
New Product
5.1019
RF Products
(continued)
Ceramic SOE Case

Table 2. Ceramic SOE Case
D i
Device
GainBandwidth
@
fT
Typ
IC
GHz
mA
Maximum Ratings
N @
G i @
Gain
Curve
C
No.
g
Page
5.1017
Typ
T
dB
MH
MHz
Typ
T
dB
MH
MHz
V(BR)CEO
(BR)CEO
Volts
V lt
IC
mA
A
11
500
13
500
15
200
P k
Package
Case 244A/1
MRF587
5.5
90
(17)PNP
f) T1 = 1,000 units.
New Product
RF Products
5.1020
Selection by Application
Table 3. Low Noise
The SmallSignal devices listed are designed for low noise and high gain amplifier mixer, and multiplier applications. Each
transistor type is available in various packages. Polarity is NPN unless otherwise noted.
Curve Number (See figure below)
Case
P k
Package
Name
Number
2(17)
MACROX
317/2
MRF951(20)
MRF571
MRF581
MRF901
TO226AA
2904/2
MPS571
MPS911
SOT23
31808/6
MMBR941LT1
MMBR521LT1 MMBR571LT1
MMBR951LT1(20)
SC70/
SOT323
419/3 6
419/3,
MRF917T1
MRF577T1
MRF927T1
MRF947AT1
MRF947T1
MRF947BT1
MRF947RT3
MRF957T1(20)
SC70ML/
SOT363
419B/
16, 17
MRF2947AT1
MRF2947RAT1
SOT 143
SOT143
318A/1
SO8
751/1
MMBR901LT1 MMBR911LT1
MRF9411BLT1
MRF9411LT1
MRF5211LT1 MRF5711LT1 MRF5811LT1 MRF9011LT1
MRF9511LT1(20)
MRF9511ALT1
MRF5812
(17)PNP
(20)Higher Current Version
4 6 25 3 1
20
16
12
6
5
2,4
4
3
2
1
0
0
0.1
0.2
0.3
0.5
NF, NOISE FIGURE (dB)
G NF , ASSOCIATED GAIN (dB)
24
10
f, FREQUENCY (GHz)
Gain and Noise Figure versus Frequency
5.1021
RF Products
Selection by Application
(continued)
Table 4. CATV, MATV and Class A Linear

For Class A linear CATV/MATV applications. Listed according to increasing gain bandwidth (fT).
Noise Figure
Nominal
N
i l Test
T
C diti
Conditions
VCE/IC
Volts/mA
fT
Typ
MHz
6/5
1500
15/50
MMBR5031LT1(18c,d)
MMBR920LT1(18c,d)
2nd
Order
O
d
IMD
dBc
3rd
Order
O
d
IMD
dBc
12 Ch.
Cross
C
Mod.
dBc
Output
O
t t
Level
dBmV
V(BR)CEO
V
P k
Package/
/
Style
4/450
12
31808/6
1500
3.4/200
30
751/1
6/5
2000
1.9/450
10
31808/6
10/14
4500
2.4/500
15
31808/6
BFR96
10/50
4500
2/500
15
317A/2
BFR90
10/14
5000
2.4/500
15
317A/2
MRF581
10/75
5000
2.7/300
65
+ 50
18
317/2
MRF581A
10/75
5000
1.8/500
65
+ 50
15
317/2
MRF5812(18a,b)
10/75
5000
1.8/500
65
+ 50
15
751/1
5000
2.7/500
15
2904/2
5000
3.2/1000
15
2904/2
5500
3/500
17
244A/1
D i
Device
MMBR5179LT1(18c)
MRF5943(18a,b)
LP1001
LP1001A
MRF587
15/90
T /F
Typ/Freq.
dB/MHz
Distortion Specifications
52
72
+ 50
f) T1 = 1,000 units.
RF Products
5.1022
Monolithic
Integrated Circuits
CASE 318A05
(SOT143)
CASE 751
(SO8)
Motorolas RF monolithic integrated circuit devices provide an

integrated solution for the personal communications market.
These devices are available in plastic SOIC8, SOIC16,
SOT143,
TSSOP16,
TSSOP16HS,
TSSOP20,
TSSOP20HS, TQFP48 or PFP16 packages.
Evaluation Boards
CASE 751B
(SO16)
CASE 948C
(TSSOP16)
CASE 846A
(MICRO8)
CASE 948D
(TSSOP20)
CASE 932
(TQFP48)
Evaluation boards are available for RF Monolithic Integrated

Circuits by adding a TF suffix to the device type. For a
complete list of currently available boards and ones in
development for newly introduced product, please contact
your local Motorola Distributor or Sales Office.
CASE 978
(PFP16)
5.1023
RF Products
RF Monolithic Integrated Circuits

Switching
Antenna Switches/Local Oscillator Switches
Freq.
Range
MHz
Supply
Volt.
Range
Vdc
Supply
Current
A (Typ)
Pin, 1 dB
Compression
dBm (Typ)
TX
Insertion
Loss
dB (Typ)
Isolation
dB (Typ)
Package
System
Applicability
MRFIC2003(18b)
100 1000
2.8 6.0
< 10
21
0.5
20
SO8
CT2, ISM
MRFIC1801(18b)
1500 2500
2.7 5.5
300
29
0.6
20
SO8
DECT, PHS,
PCS, ISM
MRFIC0903(18b)
100 2000
2.7 5.0
60
35.5
0.65
21
SO8
AMPS, Class 4 & 5 GSM,

DCS1800, PHS, PCS
MRFIC0921(46b)
100 1000
2.75.5
300
16
0.6
22
Micro8
AMPS,CT1,CT2,GSM,
IS54,ISM,DECT,PHS,PCS
Device
Receiver Functions
General Purpose Integrated Circuits
General Purpose Cascode Amplifier
Supply
Volt.
Range
Vdc
Supply
Current
mA (Typ)
Small
Signal
Gain
@ 900
MHz
dB (Typ)
MRFIC0915(18c,46b) 1002000
2.7 5.0
2.2
16.5
1.9
38
SOT143
AMPS,CT1,CT2,GSM,IS54,
ISM,DECT,PHS,PCS
MRFIC0916(18c)
2.7 5.0
4.7
18.5
1.9
44
SOT143
ISM,DECT,PHS,PCS
Device
Freq.
Range
MHz
1002000
Noise
Figure
dB (Typ)
Reverse
Isolation
dB (Typ)
Package
System
Applicability
900 MHz Front End

LNA + Mixer
Device
MRFIC2001(18b)
RF Freq.
Range
MHz
IF Freq.
Range
MHz
Supply Volt.
Range
Vdc
Supply
Current
mA (Typ)
Conv.
Gain
dB (Typ)
Output Level,
1 dB Comp.
dBm (Typ)
Package
System
Applicability
500 1000
0 250
2.7 5.0
4.7
23
10
SO8
CT2, ISM
1.5 2.2 GHz Front End

Integrated LNA
Freq.
Range
MHz
Supply Volt.
Range
Vdc
Supply
Current
mA (Typ)
Small Signal
Gain
dB (Typ)
Noise
Figure
dB (Typ)
Reverse
Isolation
dB (Typ)
Package
System
Applicability
MRFIC1501(18b)
1000 2000
35
5.7
18
1.1
26
SO8
DECT, PHS, PCS
MRFIC1808(18b)
1700 2100
2.7 4.5
4.2
17
1.6
37
SO8
DECT, PHS, PCS
1570 1580
4.5 5.5
50
65
9.5
TQFP48
GPS
Device
GPS Receiver
MRFIC1502(46a)
f) T1 = 1,000 units.
New Product
RF Products
5.1024
Receiver Functions: 1.5 2.2 GHz Front End (continued)

Integrated LNA/Downconverter
RF
Freq.
Range
GHz
IF
Freq.
Range
GHz
Supply
Volt.
Range
Vdc
Supply
Current
RX Mode
mA (Typ)
Mixer
Conv.
Gain
dB (Typ)
LNA
Gain
dB (Typ)
LNA
Noise
Figure
dB (Typ)
Package
System
Applicability
MRFIC1804(18b)
1.8 2.0
70 325
2.7 3.3
10
14
2.3
SO16
DECT,PHS,PCS
MRFIC1814(18b,46a)
1.8 2.0
70 300
2.7 4.5
10
17
2.5
TSSOP16
DECT,PHS,PCS
System
Applicability
Device
2.4 GHz Front End

Integrated LNA/Downconverter
Device
RF Freq.
Range
MHz
IF Freq.
Range
MHz
Supply
Volt.
Range
Vdc
Supply
Current
mA (Typ)
Conv.
Gain
dB (Typ)
LNA
Noise
Figure
dB (Typ)
Isolation
Lo to RF,
Lo to IF
dB (Typ)
Package
MRFIC2401(18b)
2400 2500
100 350
4.75 5.25
9.5
21
1.9
20
SO16
WLAN,
MMDS, ISM
Transmitter Functions
General Purpose Integrated Circuits
Quadrature Modulator
Device
MRFIC0001(18b)
Freq.
Range
MHz
Supply
Volt.
Range
Vdc
Supply
Current
mA (Typ)
Gain
Control
dB (Typ)
Lo
Leakage
dBm (Typ)
SSB Pout,
1 dB
Compression
dBm (Typ)
Package
50 260
2.7 5.5
10
30
55
10
TSSOP20
System
Applicability
DCS1800, GSM, NADC
PDC, PHS
General Purpose Cascode Amplifier
Supply
Volt.
Range
Vdc
Supply
Current
mA (Typ)
Small
Signal
Gain
@ 900
MHz
dB (Typ)
MRFIC0915(18c,46a) 1002000
2.7 5.0
2.2
16.5
1.9
38
SOT143
ISM,DECT,PHS,PCS
MRFIC0916(18c)
2.7 5.0
4.7
18.5
1.9
44
SOT143
ISM,DECT,PHS,PCS
Device
Freq.
Range
MHz
1002000
Noise
Figure
dB (Typ)
Reverse
Isolation
dB (Typ)
Package
System
Applicability
f) T1 = 1,000 units.
New Product
5.1025
RF Products
Transmitter Functions (continued)
900 MHz Transmit Chain

Transmit Mixer
Device
RF
Freq.
Range
MHz
IF
Freq.
Range
MHz
Supply
Volt.
Range
Vdc
Supply
Current
mA (Typ)
Standby
Current
A (Typ)
Conv.
Gain
dB (Typ)
Output
Level,
1 dB Comp.
dBm (Typ)
Package
MRFIC2002(18b)
5001000
0 250
2.7 5.0
5.5
0.1
10
18
SO8
AMPS,CT1,CT2,
GSM, IS54, ISM
MRFIC2101(18b)
8001000
0 250
3 4.75
45
26.5
4.5
SO16
AMPS,CT1,CT2,
GSM, IS54, ISM
MRFIC0931(18b,
46a)
5002000
0 250
2.7 4.5
38
SO8
AMPS,CT1,CT2,
GSM, IS54, ISM,
USPCS, CDMA
System
Applicability
Driver Amplifier
Device
Freq.
Range
MHz
Supply
Volt.
Range
Vdc
Supply
Current
mA
(Typ)
Standby
Current
mA (Typ)
Small
Signal
Gain
dB (Typ)
Gain
Control
dB (Typ)
Pout, 1 dB
Compression
dBm (Typ)
Package
MRFIC2004(18b)
8001000
2.74.0
11
0.7
21.5
34
SO16
AMPS,CT1,CT2,
GSM,ISM
MRFIC2006(18b)
5001000
1.84.0
46
23
15.5
SO8
AMPS,CT1,CT2,
GSM,ISM
MRFIC0904(18b)
8001000
2.75.0(47)
280
0.05
27
24.5
25.5
SO16
AMPS,GSM,ISM
System
Applicability
Integrated Power Amplifiers

Low Power 900 MHz Power Amplifiers
Device
Freq.
Range
MHz
Supply Volt.
Range
Vdc
Supply
Current
mA (Typ)
Small Signal
Gain
dB (Typ)
Return Loss
Input/Output
dB (Typ)
Pout, 1 dB
Compression
dBm (Typ)
Package
Semiconductor
Technology
MRFIC2006(18b)
500 1000
1.8 4.0
46
23
15
15.5
SO8
Silicon
Device
Freq.
Range
MHz
Supply Volt.
Range
Vdc
Supply
Current
mA (Typ)
Standby
Current
mA (Typ)
Small Signal
Gain
dB (Typ)
Pout, 1 dB
Compression
dBm (Typ)
Package
Semiconductor
Technology
MRFIC2101(18b)
800 1000
3 4.75
38
16
18
SO16
Silicon
Power
Gain
dB (Min)
Harmonic
Output 2fo
dBc
Pout/Pin
dBm (Min)
Package
Semiconductor
Technology
Analog Cellular
Device
Freq.
Range
MHz
Supply Volt.
Vdc
Power
Added
Efficiency
% (Min)
MRFIC0910(18e,46a)
824 905
4.8
50
17.8
40
30.8/13
PFP16
LDMOS
MRFIC0912(18e)
824 905
4.6 (47)
55
23.8
25
30.8/7
PFP16
GaAs
MRFIC0923(18e,46c)
824 905
3.6
50
17.8
40
30.8/13
PFP16
LDMOS
f) T1 = 1,000 units.
(47) Negative supply required
New Product
RF Products
5.1026
Transmitter Functions: 900 MHz Transmit Chain: Integrated Power Amplifiers (continued)
GSM Cellular
Supply Volt.
Vdc
Power
Added
Efficiency
% (Min)
Power
Gain
dB (Min)
Harmonic
Output 2fo
dBc
Pout/Pin
dBm (Min)
Package
Semiconductor
Technology
880 915
4.8 (47)
48
24.5
30
34.5/10
PFP16
GaAs
880 915
3.6 (47)
45
24.5
30
34.5/10
PFP16
GaAs
Device
Freq.
Range
MHz
Supply Volt.
Vdc
Power
Added
Efficiency
% (Min)
Power
Gain
dB (Min)
Harmonic
Output 2fo
dBc
Pout/Pin
dBm (Min)
Package
Semiconductor
Technology
MRFIC1818(18e,46a)
1.7 1.9
4.8 (47)
35
30
30
33/3
PFP16
GaAs
1.7 1.9
3.6 (47)
35
27
30
32/5
PFP16
GaAs
Package
Semiconductor
Technology
Freq.
Range
MHz
MRFIC0913(18e)
MRFIC0917(18e,46c)
Device
DCS1800, PCS1900
MRFIC1817(18e,46d)
Twoway Paging, ISM
Device
Freq.
Range
MHz
Supply Volt.
Vdc
Power
Added
Efficiency
% (Min)
MRFIC0914 (18b)
890 950
4.8
MRFIC0920(18b,
46b)
890 950
3.4
Power
Gain
dB (Min)
Harmonic
Output 2fo
dBc
Pout/Pin
dBm (Typ)
40
28
45
30.5/2.5
SO16
LDMOS
40
27.5
45
30.5/3
TSSOP
16HS
LDMOS
1.5 2.2 GHz Transmit Chain

Upconverter
RF Output
Freq.
Range
GHz
Supply
Volt.
Range
Vdc
Supply
Current
TX Mode
mA (Typ)
MRFIC1803(18b)
1.7 2.5
2.7 3.3
28
100
10
70 350
SO16
DECT,PHS,
PCS
MRFIC1813(18b)
1.7 2.5
2.7 4.5
25
100
15
70 350
TSSOP16
DECT,PHS,
PCS
1 dB
Comp.
dBm (Typ)
Pkg
Device
Standby Conv. Recommended Pout, 1 dB

Current
Gain
IF Input
Comp.
A (Typ) dB (Typ)
MHz (Typ)
dBm (Typ)
Package
System
Applicability
Power Amplifier
RF Output
Freq.
Range
GHz
Supply
Volt.
Range
Vdc(47)
Supply
Current
mA (Typ)
MRFIC1805(18b,
46a)
1.7 2.5
2.7 5.0
190
0.25
21
22/0
23
TSSOP16
DECT,PHS,
PCS
MRFIC1806(18b)
1.5 2.5
3.0 5.0
115
0.25
23
19.5/ 3
21
SO16
DECT,PHS,
PCS
MRFIC1807(18b)
1.5 2.2
3.0 5.0
325
0.06
26.8/20
25
SO16
DECT,PHS,
PCS
Device
Standby
Small
Pout/Pin
Current Signal Gain
dBm
mA (Typ)
dB (Typ)
(Typ)
System
Applicability
f) T1 = 1,000 units.
(47) Negative supply required
New Product
5.1027
RF Products
Transmitter Functions: 1.5 2.2 GHz Transmit Chain (continued)

Power Amplifier
Device
MRFIC1807(18b)
(Including TX/RX
Switch)
RF Output
Freq.
Range
GHz
Supply
Volt.
Range
Vdc
PA Supply
Current
TX Mode
mA (Typ)
Standby
Current
mA
(Typ)
Small
Signal
Gain
dB (Typ)
Insertion
Loss
Rx Mode
dB (Typ)
Pout, 1 dB
Compression
dBm (Typ)
Package
1.5 2.2
3.0 5.0
325
0.06
25
SO16
System
Applicability
DECT, PHS,
PCS
2.4 GHz Transmit Chain

Exciter Amplifier
Device
MRFIC2404(18b)
Freq.
Range
GHz
Supply Volt.
Range
Vdc
Supply
Current
mA (Typ)
Small Signal
Gain
dB (Typ)
Noise
Figure
dB (Typ)
Pout, 1 dB
Compression
dBm (Typ)
Package
2.0 3.0
4.75 5.25
17
4.3
SO8
System
Applicability
WLAN,
MMDS, ISM
Power Amplifier
Supply Volt.
Range
Vdc
Supply
Current
mA (Typ)
MRFIC2403(18b) 2200 2700
4.75 5.25
95
23
20
19
SO16
WLAN,
MMDS, ISM
MRFIC2410(46b) 2200 2700
4.75 5.25
400
17.5
31.5
TSSOP
20HS
WLAN,
MMDS, ISM
Package
System
Applicability
SO16
WLAN, ISM
Device
Freq.
Range
MHz
Small Signal Power Control

Pout, 1 dB
Gain
Range
Compression
dB (Typ)
dB (Typ)
dBm (Typ)
Package
System
Applicability
Upconverter
RF Output
Freq.
Range
GHz
Supply
Volt.
Range
Vdc
Supply
Current
TX Mode
mA (Typ)
MRFIC1803(18b)
1.7 2.5
2.7 3.3
28
100
10
MRFIC1813(18b)
1.7 2.5
2.7 4.5
25
100
15
70 350
TSSOP16
WLAN, ISM
MRFIC2406(18b,46a)
2.4 2.5
35
15
.6
100 370
10
SO16
WLAN,
MMDS, ISM
Device
Standby Conv. Recommended Pout, 1 dB

Current
Gain
IF Input
Comp.
A (Typ) dB (Typ)
MHz (Typ)
dBm (Typ)
70 350
f) T1 = 1,000 units.
New Product
RF Products
5.1028
RF Amplifiers
Motorolas line of RF amplifiers designed and specified for use in land mobile radios, CATV distribution systems and general
purpose wideband amplification applications. They feature small size, matched inputs and outputs, high stability and guaranteed
performance specifications. For the user, they offer the benefits of smaller and less complex system designs in less time and at
lower overall cost.
Each amplifier uses modern transistor chips which are gold metallized and have silicon nitride passivation for increased reliability
and long life. Chip and wire construction features MOS capacitors and laser trimmed nichrome resistors. Circuit substrates and
metallization have been selected for optimum performance cost and reliablity.
CASE 301AA
STYLE 1
CASE 301AB
STYLE 1
CASE 301AK
STYLE 1
CASE 301AL
STYLE 1
CASE 301AN
STYLE 1
CASE 301AP
STYLE 1
CASE 301G
STYLE 1
CASE 301E
STYLE 1
CASE 301H
STYLE 2
CASE 301N
STYLE 1
CASE 420A
STYLE 1
CASE 420L
STYLE 1
CASE 301J
STYLE 1
CASE 301T
STYLE 1
CASE 301R
STYLE 1
CASE 420AB
STYLE 1
CASE 420U
STYLE 1
CASE 301F
STYLE 1
CASE 420AC
STYLE 1
CASE 420W
STYLE 1
5.1029
CASE 301K
STYLE 3
CASE 420
STYLE 1
CASE 301V
STYLE 1
CASE 420J
STYLE 1
CASE 420Z
STYLE 1
RF Products
CASE 429C
STYLE 1
CASE 429A
STYLE 1
CASE 429E
STYLE 1
CASE 439
STYLE 1
CASE 438A
STYLE 1
CASE 467
STYLE 1
CASE 467A
STYLE 1
CASE 448
STYLE 1, 2
CASE 714
STYLE 1
CASE 714F
STYLE 1
CASE 714G
STYLE 1
CASE 714P
STYLE 2
CASE 714V
CASE 714T
STYLE 1, 2
CASE 714U
STYLE 1
CASE 714Y
STYLE 1
RF Products
5.1030
CASE 825A
STYLE 2
RF Amplifier Modules
Complete amplifiers with 50 ohm in/out impedances are available for a variety of applications including land mobile radios, base
stations, TV transmitters and other uses requiring largesignal amplification, both linear and Class C. Frequencies covered range
from 68 1990 MHz with power levels extending to 180 watts.
Land Mobile/Portable
The advantages of small size, reproducibility and overall lower cost become more pronounced with increasing frequency of
operation. These amplifiers offer a wide range in power levels and gain, with guaranteed performance specifications for bandwidth,
stability and ruggedness.
Table 1. VHF/UHF, Class C
Device
Pout
Output Power
Watts
Pin
Input Power
Watts
f
Frequency
MHz
GP
Power Gain, Min
dB
VCC
Supply Voltage
Volts
Package/Style
68 88
136 150
146 174
174 195
184 210
37
38.4
38.4
38.4
38.4
7.5
7.5
7.5
7.5
7.5
301K/3
301K/3
301K/3
301K/3
301K/3
68 210 MHz, VHF Band Class C (Silicon Bipolar Die)

MHW105
MHW6071
MHW6072
MHW6073
MHW6074
5
7
7
7
7
0.001
0.001
0.001
0.001
0.001
136 174 MHz, VHF Band (LDMOS Die)
Device
Pout
Output Power
Watts
Pin
Input Power
Watts
f
Frequency
MHz
GP
Power Gain, Min
dB
VDD
Supply Voltage
Volts
Package/Style
MHW26071(46a)
MHW26271(46a)
MHW26272 (46a)
7
7
7
0.001
0.02
0.02
136174
136174
216234
38.5
25.5
25.5
7.5
7.5
7.5
301AN/1
420AC/1
420AC/1
380470 MHz, Land Mobile Linear (for TransEuropean Trunked Radio TETRA) Class AB (LDMOS Die)
Device
Psat
Watts
ACP
(Pout = 1.6 W
@ fo 25 kHz,
18 kHz BW)
(dBc)
MHW27011 (46a)
MHW27012 (46a)
4.5
4.5
30
30
f
Frequency
MHz
380430
420470
GP
Power Gain, Min
VDD
Supply Voltage
dB
Volts
Package/Style
28
28
7
7
420Z/1
420Z/1
380470 MHz, Land Mobile Linear (for TransEuropean Trunked Radio TETRA) Class AB (LDMOS Die)
Device
MHW2703 (46a)
MHW2723 (46a)
Psat
Watts
ACP
(Pout = 5 W
@ fo 25 kHz,
18 kHz BW)
(dBc)
f
Frequency
MHz
10
12
30
30
380400
380470
GP
Power Gain, Min
VDD
Supply Voltage
dB
Volts
Package/Style
28
30
7
12.5
420Z/1
420Z/1
GP
Power Gain, Min
dB
VCC
Supply Voltage
Volts
Package/Style
400 512 MHz, UHF Band Class C (Silicon Bipolar Die)
Device
MHW7041
MHW7042
MHW7071
MHW7072
MHW7073
MHW7074
Pout
Output Power
Watts
3
3
7
7
7
7(23)
Pin
Input Power
Watts
0.001
0.001
0.001
0.001
0.001
0.001
f
Frequency
MHz
400 440
440 470
403 440
440 470
470 500
490 512
34.8
34.8
38.4
38.4
38.4
38.4(23)
6.0
6.0
7.5
7.5
7.5
7.5
301J/1
301J/1
301J/1
301J/1
301J/1
301J/1
(23)P @ f = 490 MHz. P = 6.5 W @ f = 512 MHz

o
o
5.1031
RF Products
Land Mobile/Portable
(continued)
400 512 MHz, UHF Band Class C (Silicon Bipolar Die) continued
Device
MHW720A1(22)
MHW720A2(22)
Pout
Output Power
Watts
Pin
Input Power
Watts
f
Frequency
MHz
0.15
0.15
400 440
440 470
20
20
GP
Power Gain, Min
dB
VCC
Supply Voltage
Volts
Package/Style
12.5
12.5
700/2
700/2
21
21
400 520 MHz, UHF Band Class D A (Dynamic Bias via Gate Control) (LDMOS Die)
Pout
Output Power
Device
Watts
Pin
Input
Power
Watts
f
Frequency
MHz
7
7
7
7
7
7
7
7
0.001
0.001
0.001
0.001
0.02
0.02
0.02
0.02
400440
440470
400470
470520
400470
450520
400470
450520
MHW27071
MHW27072
MHW2707A1 (46a)
MHW2707A2 (46a)
MHW27171 (46a)
MHW27172 (46a)
MHW27271 (46a)
MHW27272 (46a)
GP
Power Gain, Min
dB
VDD
Supply
Voltage
Volts
Package/Style
38.5
38.5
38.5
38.5
25.5
25.5
25.5
25.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
301AL/1
301AL/1
301AL/1
301AL/1
420J/1
420J/1
420AC/1
420AC/1
806 821 MHz, UHF Band (for Integrated Digital Enhanced Network iDEN) Class AB (LDMOS Die)
MHW2801 (46a)
0.8
0.00025
806821
35
420L/1
806 960 MHz, UHF Band Class C (Silicon Bipolar Die)

Pout
Output Power
Device
MHW8511
MHW8512
MHW8513
MHW8514
MHW8031
MHW8032
MHW8033
MHW8041
MHW806A4(22)
Watts
Pin
Input
Power
Watts
f
Frequency
MHz
1.6
1.6
2
1.6
2
2
2
4
6
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.04
820 850
870 905
890 915
915 925
820 850
806 870
870 905
800 870
870 950
GP
Power Gain, Min
VCC
Supply Voltage
dB
Volts
Package/Style
32
32
33
32
33
33
33
36
21.7
6
6
6
6
7.5
7.5
7.5
7.5
12.5
301N/1
301N/1
301N/1
301N/1
301E/1
301E/1
301E/1
301F/1
301H/2
806 960 MHz, UHF Band Class AB (LDMOS Die)

Pout
Output Power
Device
MHW2803 (46a)
MHW28051 (46a)
MHW28052 (46a)
MHW28201 (46a)
MHW28202 (46a)
MHW28211
MHW28212
Watts
Pin
Input
Power
Watts
f
Frequency
MHz
3.5
5
5
20
18
20
18
0.001
0.004
0.004
<0.250
<0.300
<0.250
<0.300
806824
806870
890950
806870
890950
806 870
890 950
GP
Power Gain, Min
VDD
Supply Voltage
dB
Volts
Package/Style
35.5
31
31
19
17.9
19
17.9
6
7.5
7.5
12.5
12.5
12.5
12.5
420L/1
420AB/1
420AB/1
301G/1(42)
301G/1(42)
GP
Power Gain, Min
VCC
Supply Voltage
dB
Volts
Package/Style
33.2
6.0
420/1
301AB/1
301AB/1
1710 1785 MHz, UHF Band (GaAs FET Die)

Pout
Output Power
Device
MHW9014
Watts
Pin
Input
Power
Watts
f
Frequency
MHz
2.1
0.001
1710 1785
(22)Designed for Wide Range P

out Level Control
(42)Dropin for bipolar MHW820
New Product
RF Products
5.1032
Table 2. UHF, Linear
Device
Pout
Output Power
Watts
Pin
Input Power
Watts
f
Frequency
MHz
GP
Power Gain, Min
dB
VCC
Supply Voltage
Volts
Package/Style
824849
824849
24
25.5/22
5.8
5.8
438A/1
438A/1
29
37.8
6
12.5
420U/1
301AA/1
35.4
7.2
301V/1
800 MHz, (for CDMA and TDMA, Dual Mode) (GaAs)

MHW9005(46b)
MHW9006( 46b)
1
1.4/0.63(43)
0.004
0.004
824 849 MHz, UHF Band Class AB (Silicon Bipolar Die)

MHW920
MHW927B(22)
0.8(24)
6(24)
0.001
0.001
824 849
824 849
880 960 MHz (for GSM) Class AB (Silicon Bipolar Die)

MHW953(22)
3.5
0.001
890 915
880 960 MHz (for GSM) Class AB (LDMOS Silicon FET)
Device
MIM2901 (46a)
MIM2906 (46a)
MIM2908 (46a)
MHW2905
MHW910 (46a)
MHW913
MHW914(22)
MHW916
MHW930 (46a)
Pout
Output Power
Watts
Pin
Input Power
Watts
f
Frequency
MHz
GP
Power Gain, Min
dB
VDD
Supply Voltage
Volts
Package/Style
1.41
3.5
3.2
3.2
10
14
14
16
30
0.004
0.002
0.002
0.002
0.050
0.1
0.001
0.036
0.050
824849
890915
880915
890915
925960
880 915
890 915
925 960
925 960
25.5
32.5
32
32
23
21.5
41.4
26.5
27
3.6
6
4.8
6
24
12.5
12.5
26
26
TBD
467A/1
467/1
420W/1
301AB/1
301AB/1
301R/1
301AB/1
301AB/1
18051880 MHz (for DCS1800) Class AB (Silicon Bipolar Die)
Device
MHW1815
Pout
Output Power
Watts
Pin
Input Power
Watts
f
Frequency
MHz
GP
Power Gain, Min
dB
VCC
Supply Voltage
Volts
Package/Style
14.5
0.005
18051880
34.6
26
301AK/1
34.8
26
301AK/1
19301990 MHz (for PCS1900) Class AB (Silicon Bipolar Die)

MHW1916
15.0
0.005
19301990
(22)Designed for Wide Range P

out Level Control
(24)Average Power; Peak Power is twice average power
(43)Capacitive Load 8.5 pF, V
out = 40 V P-P
New Product
5.1033
RF Products
Wideband Linear Amplifiers

Table 1. General Purpose Wideband Amplifiers
Frequency
Range
Gain
Min/Typ
Supply Voltage
Output Level
1 dB Compression
Noise Figure
@ 250 MHz
MHz
dB
Vdc
MW/@ MHz
dB
1 250
1 250
10 400
10 400
34.5/36.5
33.5/35
33/34.5
31.5/34
13.6
24
13.6
24
700/100
900/100
600/200
800/200
5
5
5
5
Device
Package/
Style
50100 Hybrids
MHW591
MHW592
MHW593
MHW590
714/1
714/1
714/1
714/1
Table 2. Cellular Base Station PreDrivers

These 50 ohm amplifiers are recommended for modern, multitone, CDMA and/or TDMA basestation predriver applications.
Their high thirdorder intercept, tight phase control and excellent group delay characteristics make these amplifiers ideal for
use in highpower feedforward loops.
UltraLinear Class A (Silicon Bipolar Die)
BW
MHz
VCC
(Nom.)
Volts
ICC
(Nom.)
mA
Gain
(Nom.)
dB
Gain
Flatness
(Typ)
dB
P1dB
(Typ)
dBm
3rd Order
Intercept
(Typ)
dBm/MHz
NF
(Typ)
dB
Case/
Style
800 960
800 960
15
28
700
400
20
20
0.5
0.5
31
31
43
43
7.5
7.5
448/2
448/1
Device
BW
MHz
VDD
(Nom.)
Volts
IDD
(Nom.)
mA
Gain
(Nom.)
dB
Gain
Flatness
(Typ)
dB
P1dB
(Typ)
dBm
3rd Order
Intercept
(Typ)
dBm/MHz
NF
(Typ)
dB
Case/
Style
MHL9236 (46b)
MHL9232 (46c)
800 960
800 960
26
12.5
525
700
30
30
.1
.1
34
34
47
47
4.5
5.0
301AP/1
301AP/1
Device
MHL9125
MHL9128
UltraLinear Class A (LDMOS Die)
Table 3. Standard 50 Ohm Linear Hybrids

This series of RF linear hybrid amplifiers have been optimized for wideband, 50 ohm applications. These amplifiers were
designed for multipurpose RF applications where linearity, dynamic range and wide bandwidth are of primary concern. Each
amplifier is available in various package options. The MHL series utilizes a new case style that provides microstrip input and
output connections.
Device
CA2832C
CA2830C
CA2833C
CA2818C
CA2842C
CA2810C
MHL8118
MHL8115
MHL8018
MHL8015
BW
MHz
VCC
(Nom.)
Volts
ICC
(Nom.)
mA
Gain/Freq.
(Typ)
dB/MHz
Gain
Flatness
(Typ)
dB
1 200
5 200
5 200
.35 400
10 400
10 450
40 1000
40 1000
40 1000
40 1000
28
24
24
24
24
24
28
15
28
15
435
300
300
205
230
310
400
700
210
380
35.5/100
34.5/100
34.5/100
18.5/50
22/100
34/50
17.5/900
17.5/900
18.5/900
18.5/900
0.5
0.5
0.5
0.5
0.5
1.5
1
1
1
1
P1dB
(Typ)
dBm
3rd Order
Intercept
Point/Freq.
(Typ)
dBm/MHz
NF/Freq.
(Typ)
dB/MHz
Case/
Style
33
29
29
30
30
30
30
30
26
26
47/200
46/200
46/200
45/200
44/300
43/300
41.5/1000
41.5/1000
38.5/1000
38.5/1000
5/200
4.7/200
4.7/200
5/200
4/100
5/300
8.5/1000
8.5/1000
7.5/1000
7.5/1000
714F/1
714F/1
714G/1
714F/1
714F/1
714F/1
448/1
448/2
448/1
448/2

New Product
RF Products
5.1034
Amplifier Modules (continued)
TV Transmitters
Table 4. UHF Ultra Linear for TV Applications
These amplifiers are characterized for ultralinear applications in Band IV and Band V TV transmitters.
Device
MRFA2600(26)
MRFA2602(28)
RFA8090B
MRFA2604
Frequency
MHz
470 860
470 860
470 860
470 860
Pref
Watts
20
40
95(11)
180(11)
GP (Min)/Freq.
Power Gain
dB/MHz
3 Tone(8)
IMD 1
dB
3 Tone(25)
IMD 2
dB
VCC
Volts
Class
Package/Style
10.5/860
9/860
8/860
8/860
50
50
53
53
26.5
25.5
28
28
A
A
AB
AB
429A/1
429C/1
429E/1
439/1

(11)Output power at 1 dB compression in Class AB
(26)Formerly known as RFA6031
(28)Formerly known as RFA6060
5.1035
RF Products
CATV Distribution Amplifiers

Motorola Hybrids are manufactured using the latest generation technology which has set new standards for CATV system
performance and reliability. These hybrids have been optimized to provide premium performance in all CATV systems up to 152
channels.
Fiber Optic Receivers for HFC

40860 MHz Hybrids
Maximum Distortion Specifications
Hybrid
Responsivity
Min
Flatness
dB
23.0
Device
D
i
MHLW8000
Equivalent Input
Noise
IMD 2(52)
IMD 3(52)
pA Hz
dB
dB
dB
Max
P k
Package/
/
Style
1.0
70
80
7.5
714U/1
Note: Please call your local Motorola Sales Office for information on optical connector options for this part.
Forward Amplifiers
40/1000 MHz Hybrids, VCC = 24 Vdc, Class A
Hybrid
H
b id
Gain
(Nom.)
D i
Device
MHW9142
MHW9182
MHW9242
Channell
Ch
Loading
Capacity
dB
14
18
24
152
152
152
Output
Level
2nd
Order
Test
Composite
Triple Beat
Cross
Modulation
Noise
Figure
@ 860 MHz
dB
dB
dB
dBmV
dB
152 CH
152 CH
Max
Package/
P
k
/
Style
+ 38
+ 38
+ 38
59(40)
59(40)
59(40)
59
59
58
63
59
59
8.5
8.0
8
714/1
714/1
714/1
DIN45004B
@ f=860 MHz
dBV
Min
Noise Figure
@ 860 MHz
dB
Max
Package/
Style
120
120
8
8
714P/2
714P/2
40 860 MHz Hybrids
Device
CA901
CA901A
Gain
dB
Typ
Frequency
VCC
MHz
Volts
2nd Order
IMD
@ Vout = 50 dBmV/ch
Max
17
17
40 860
40 860
24
24
60
64
(40)Composite 2nd Order; V

out = + 38 dBmV/ch
(52)Two laser test with 0.5 mW optical power at 40% modulation index per laser; f1 = 373.25 MHz f2 = 415.25 MHz
New Product
RF Products
5.1036
CATV Distribution: Forward Amplifiers
(continued)
40 860 MHz Hybrids (continued)
Device
Volts
2nd Order
IMD
@ Vout = 50 dBmV/ch
Max
DIN45004B
@ f=860 MHz
dBV
Min
Noise Figure
@ 860 MHz
dB
Max
Package/
Style
24
24
63
67
123
123
9.5
9.5
714P/2
714P/2
Frequency
VCC
MHz
17
17
40 860
40 860
1 1000
Gain
dB
Typ
Power Doubling Hybrids

CA922
CA922A
Hybrid Jumper
CATHRU
75 Ohm Broadband Hybrid Jumper
714V
40 860 MHz Hybrids, VCC = 24 Vdc, Class A

Hybrid
H
b id
Gain
(Nom.)
Device
D
i
MHW8142
MHW8182
MHW8222
MHW8242
MHW8272
MHW8292
Channell
Ch
Loading
g
Capacity
2nd
Order
Test
Composite
Triple Beat
dB
Cross
Modulation
FM = 55.25 MHz
dB
Noise
Figure
@ 860 MHz
dB
dBmV
dB
128 CH
128 CH
Max
Package/
P
k
/
Style
128
128
128
128
128
128
+38
+38
+38
+38
+38
+38
60(40)
60(40)
60(40)
60(40)
60(40)
56(40)
61
60
60
60
60
60
66
60
60
60
60
60
8.0
7
7.5
7.5
7.0
7.0
714/1
714/1
714/1
714/1
714/1
714/1
128
128
+40
+40
62(39)
60(39)
64
63
64
64
8.0
8.0
714Y/1
714Y/1
128
+44
68(36)
66
13.0
825A/2
dB
14
18
22
24
27
29
Output
Level

MHW8185 (46a)
MHW8205 (46a)
18.5
20
Feedforward Hybrids
MFF524B
24

Hybrid
H
b id
Gain
(Nom.)
Device
D i
dB
MHW7142
MHW7182
MHW7222
MHW7242
MHW7272
MHW7292
14
18
22
24
27
29
Channell
Ch
Loading
Capacity
110
110
110
110
110
110
Output
Level
2nd
Order
Test
Composite
Triple Beat
dB
Cross
Modulation
FM = 55.25 MHz
dB
Noise
Figure
@ 750 MHz
dB
dBmV
dB
110 CH
110 CH
Max
P k
Package/
/
Style
+40
+40
+40
+40
+40
+40
60(39)
62(39)
55(39)
60(39)
60(39)
60(39)
62
62
60
60
60
60
66
64
60
60
60
60
8.0
6.5
7
7
6.5
6.5
714/1
714/1
714/1
714/1
714/1
714/1
(36)Composite 2nd order; V

out = + 44 dBmV/ch
out = +40 dBmV/ch
(40)Composite 2nd Order; V
out = + 38 dBmV/ch
New Product
5.1037
RF Products
(continued)
40 750 MHz Hybrids, VCC = 24 Vdc, Class A (continued)

Hybrid
H
b id
Gain
(Nom.)
Device
D i
Channell
Ch
Loading
Capacity
Output
Level
2nd
Order
Test
Composite
Triple Beat
dB
Cross
Modulation
FM = 55.25 MHz
dB
Noise
Figure
@ 750 MHz
dB
dBmV
dB
110 CH
110 CH
Max
P k
Package/
/
Style
110
110
110
110
110
110
+44
+44
+44
+44
+44
+44
58(36)
58
62
56(36)
58
61
58
58
62
57
57
61
65
65
62
64
64
61
8.5
8.5
8.0
8.0
8.0
8.0
714/1
714Y/1
714Y/1
714/1
714Y/1
714Y/1
110
+44
70(36)
68
13
825A/2
dB

MHW7185A
MHW7185B (46a)
MHW7185C (46a)
MHW7205A
MHW7205B (46a)
MHW7205C (46a)
18.5
18.5
18.8
20
20
20
Feedforward Hybrids
MFF424B
24

Hybrid
Gain
(Nom.)
Channel
Loading
Capacity
Output
Level
2nd
Order
Test
Composite
Triple Beat
Cross
Modulation
Noise
Figure
@ 600 MHz
dB
dB
dB
dBmV
dB
87 CH
87 CH
Max
P k
/
Package/
Style
87
87
87
87
+44
+44
+44
+44
56(36)
56(36)
63(36)
63(36)
57
56
57
57
55
56
55
55
6
6
6.5
6.5
714/1
714/1
714/1
714/1
18
20
87
87
+44
+44
64(36)
63(36)
64
63
66
65
7
6.5
714/1
714/1
24
85
+44
86(38)
73
68
12.5
825A/2
D i
Device
dB
MHW61826
MHW62226
MHW62726 (46a)
MHW62926 (46a)
18
22
27
29

MHW61856A
MHW62056A
Feedforward Hybrids
MFF324B

out = + 44 dBmV/ch
(38)Channels 2 and M39 @ M48
New Product
RF Products
5.1038
(continued)

Hybrid
Gain
(Nom.)
Device
D i
MHW6142
MHW6172
MHW6182
MHW6222
MHW6272
MHW6342
Channel
Loading
Capacity
2nd
Order
Test
Composite
Triple Beat
Cross
Modulation
Noise
Figure
@ 550 MHz
dB
dB
dB
dBmV
dB
77 CH
77 CH
Max
P k
Package/
/
Style
77
77
77
77
77
77
+44
+44
+44
+44
+44
+44
72(35)
72(35)
72(35)
66(35)
64(35)
64(35)
59
59
58
57
57
57
62
62
62
57
57
57
7.5
7
7
6
6.5
6.5
714/1
714/1
714/1
714/1
714/1
714/1
77
77
77
+44
+44
+44
65(36)
60(36)
55(36)
65
64
62
68
67
60
7.5
7.5
7.0
714/1
714/1
714/1
77
+44
86(35)
75
70
11
825A/2
dB
14
17
18
22
27
34
Output
Level

MHW6185B
MHW6205
MHW6225
18
20
22
Feedforward Hybrids
MFF224B
24

Hybrid
H
b id
Gain
(Nom.)
Device
D i
dB
MHW5142A
MHW5172A
MHW5182A
MHW5222A
MHW5272A
MHW5342A
MHW5382A
14
17
18
22
27
34
38
Channell
Ch
Loading
Capacity
Composite
Triple Beat
Cross
Modulation
Noise
Figure
@ 450 MHz
dB
dB
dB
Output
Level
2nd Order
Test
dBmV
dB
60 CH
60 CH
Max
P k
Package/
/
Style
60
60
60
60
60
60
60
+ 46
+ 46
+ 46
+ 46
+ 46
+ 46
+ 46
74(31)
74(31)
72(31)
72(31)
68(31)
68(31)
64(31)
61
60
61
60
59
59
59
62
62
59
59
60
59
59
7
7
6.5
5.5
6.0
6.0
5.0
714/1
714/1
714/1
714/1
714/1
714/1
714/1
60
60
+ 46
+ 46
67(32)
69(31)
67
62
67
62
7.0
6.0
714/1
714/1
60
+ 46
84(31)
79
75
10
825A/2

MHW5185B
MHW5225
18
22
Feedforward Hybrids
MFF124B
24

out = + 46 dBmV/ch
out = + 44 dBmV/ch
5.1039
RF Products
Reverse Amplifiers
Hybrid
H
b id
G i
Gain
(Nom )
(Nom.)
Device
D
i
MHW1134
MHW1184
MHW1224
MHW1244
Channell
Ch
L di
Loading
Capacity
dB
13
18
22
24
22
22
22
22
Composite
Triple
p Beat
Cross
Modulation
dB
dB
Noise
Figure
@ 175
MHz
O
Output
Level
2nd
2 d
Order
O
d
Test(30)
dBmV
dB
22 CH
26 CH
22 CH
26 CH
dB
Max
Package/
P
k
/
Style
+50
+50
+50
+50
72
72
72
72
73
70
69
68
71(19)
70(19)
68.5(19)
67.5(19)
65
64
62
61
65(19)
64(19)
62(19)
61(19)
7
5.5
5.5
5
714/1
714/1
714/1
714/1
Low Current Amplifiers 550 MHz Hybrids, VCC = 24 Vdc, Class A

Hybrid
H
yb id
G i
Gain
(Nom )
(Nom.)
Channell
Ch
L di
Loading
Capacity
Composite
Triple
p Beat
Cross
Modulation
dB
dB
O t t
Output
Level
2nd
2 d
Od
Order
Test(30)
Max
dBmV
dB
4 CH
4 CH
Max
Package/
P
k
/
Style
135
135
135
135
+50
+50
+50
+50
70
70
70
70
73
72
70
66
64
63
62
57
5
5
4.5
4.5
714/1
714/1
714/1
714/1
IDC
dB
mA
D i
Device
dB
MHW1184L
MHW1224L
MHW1254L
MHW1304L
18
22
25
30
4
4
4
4
Noise
Figure
@ 50
MH
MHz
(19)Typical
(30)Channels 2 and A @ 7
RF Products
5.1040

Motorola Master Selection Guide RF

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How to Use This Selector Guide

Motorola Master Selection Guide

Motorola Master Selection Guide

Motorola Master Selection Guide

VCC = 12.5 Volts, Class AB

Table 2. To 150 MHz HF/SSB

VDD = 28 Volts, Class AB

VDD = 50 Volts, Class AB

Table 3. To 225 MHz VHF AM/FM

VDD = 28 Volts, Class AB

VDD = 50 Volts, Class AB

Motorola Master Selection Guide

Table 4. To 500 MHz VHF/UHF AM/FM

VDD = 28 Volts, Class AB

VDD = 50 Volts, Class AB

Table 5. To 520 MHz

VDD = 7.5 Volts, Class AB LDMOS Die

VCC = 7.5 Volts, Class AB

VCC = 12.5 Volts, Class AB

Motorola Master Selection Guide

Table 6. To 900 MHz

900 MHz, VDD = 48 Volts, Class AB LDMOS Die

Table 7. To 1.0 GHz

1.0 GHz, VDD = 26 Volts, Class AB LDMOS Die

1.0 GHz, VDD = 28 Volts, Class AB LDMOS Die

Table 8. To 1.6 GHz

(3)Internal Impedance Matched Push-Pull Transistors

Motorola Master Selection Guide

RF Power Bipolar Transistors

VCC = 12.5 or 13.6 Volts, Class AB

VCC = 28 Volts, Class AB

VCC = 50 Volts, Class AB

Table 2. 14 30 MHz, CB/Amateur Band

Table 3. 27 50 MHz, LowBand FM Band

VCC = 12.5 or 13.6 Volts, Class AB

VCC = 28 Volts, Class AB

(2)Internal Impedance Matched

Motorola Master Selection Guide

Table 5. 136 174 MHz High Band

VCC = 12.5 Volts, Class C

VCC = 28 Volts, Class C

Table 7. 400 500 MHz Band

VCC = 28 Volts, Class C

Motorola Master Selection Guide

Table 8. 470 512 MHz Band

VCC = 12.5 Volts, Class C

900 MHz Transistors

VCC = 12.5 Volts Class C Si Bipolar

(2)Internal Impedance Matched

Motorola Master Selection Guide

900 MHz Transistors

Table 9. 870 960 MHz Band (continued)

VCC = 24 Volts Si Bipolar

VCC = 26 Volts Si Bipolar

1.5 GHz Transistors

VCC = 18 Volts Class A & AB Common Emitter

VCC = 35 Volts Class B & C Common Base