Steer RF Chapter1
Steer RF Chapter1
Steer RF Chapter1
Modulation, Transmitters
and Receivers
1.1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.2 RF Signals . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
1.3 Analog Modulation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
1.4 Digital Modulation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
1.5 Ampliers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
1.6 Noise and Nonlinear Distortion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50
1.7 Active Switch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 59
1.8 Mixers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62
1.9 Early Receiver Technology . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 66
1.10 Modern Transmitter Architectures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 68
1.11 Modern Receiver Architectures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72
1.12 Summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 82
1.1 Introduction
The frontend of a radio frequency (RF) communication receiver combines a
number of subsystems in cascade to achieve several objectives. Filters and
matching networks provide frequency selectivity to eliminate interfering signals.
Ampliers manage noise levels by boosting both received signals and signals to be
transmitted. Mixers coupled with oscillators translate the modulated information
from one frequency to another.
There are only a few types of receiver and transmitter architectures. In a receiver,
the central idea is to take information superimposed on an RF signal or carrier and
convert it to a lower frequency form which can be directly applied to a speaker
or digitized. In a cellular communication system, the low-frequency signal, often
called the baseband signal, could have a bandwidth of 30 kHz to 5 MHz and the
carrier frequency could be 500 MHz to 2 GHz. A transmitter takes the baseband
signal and superimposes it on an RF carrier which can be more easily radiated
2 MICROWAVE AND RF DESIGN: A SYSTEMS APPROACH
ANTENNA
BPF BPF
RF RF RF
LPF
MIXER MIXER
AMPLIFIER AMPLIFIER
ADC DSP
2
LO
1
LO
IF
1
IF
2
IF
1
IF
1
IF
2
(a)
IF
BPF
RF
MIXER
AMPLIFIER
ANTENNA
IF
LO
LPF ADC DSP
RF RF
(b)
IF
BPF
ANTENNA
LPF DAC DSP
RF RF RF IF
LO
MIXER
AMPLIFIER
(c)
Figure 1-1 Unilateral RF frontend: (a) a receiver with two mixing stages; (b) a receiver with
one heterodyne stage; and (c) a one-stage transmitter.
into space and propagates easily from one antenna to another. The essential
receiver and transmitter architectures are shown in Figure 1-1. In a receiver
mixers down-convert information superimposed on an RF carrier to a lower
frequency that can be directly connected to speakers or digitized by an analog-
to-digital converter (ADC). With a transmitter, the low-frequency information-
bearing signal is translated to a frequency that can be more easily radiated. The
most common receiver architecture is shown in Figure 1-1(a). First, an antenna
collects a broad portion of the electromagnetic spectrum. Antennas have relatively
lowfrequency selectivity (they have broad bandwidth) and unwanted signal levels
can be large, so additional ltering by a bandpass lter (BPF) is required to reduce
the range of voltages presented to the rst amplier. Eventually this signal is
digitized by an ADC but to do this the frequency of the information-carrying part
of the signal must be reduced. The stepping down of frequency is accomplished
by a mixer stage. With the mixer driven by a large local oscillator (LO) signal, the
output at the intermediate frequency (IF) is at the difference frequency of the RF
and LO(see Figure 1-2). Thus f
IF
= f
RF
f
LO
(although sometimes the LOis above
the RF so that f
IF
= f
LO
f
RF
). LOs generally have noise close to the operating
frequency so that there is a limit on how close the RF and LO can be in frequency
without oscillator noise appearing at the IF. If there is a single mixer, then the IF
MODULATION, TRANSMITTERS AND RECEIVERS 3
MIXER RF IF
LO
FREQUENCY
IF
RF
f f
LO
RF
LO
IF
DC
f
(a) (b)
Figure 1-2 Simple mixer circuit: (a) block diagram; and (b) spectrum.
may still be too high. A solution is to use two stages of mixing. A BPF between
the mixing (or heterodyning) stages further blocks unwanted signals. Eventually a
lowpass lter (LPF) allows only the nal IF (here IF
2
) to be presented to the ADC.
Once digitized, it is possible to further lter the intended signal which originally
appeared as modulation at the RF. Aone-stage receiver, see Figure 1-1(b), generally
requires a better ADC, but the elimination of a mixing stage reduces cost and size.
The architecture of a transmitter is similar, with a key difference being the digital-
to-analog converter (DAC) (see Figure 1-1(c)).
The major active elements in the RF frontend of both the transmitter and receiver
are the ampliers, mixers, and oscillators. These subsystems have much in
common using nonlinear devices to convert power at DC to power at RF. In the
case of mixers, power at the local oscillator(LO) is also converted to power at
RF. The frontend of a typical cellphone is shown in Figure 1-3. The components
here are generally implemented in a module and use different technologies for
the various elements, optimizing cost and performance. There are many variants
of the architecture shown here. At one extreme a module is used with all of
the components packed in a shielded structure perhaps 1 cm on a side and 2
3 mm thick. Another extreme is a single-chip implementation, usually in BiCMOS
(bipolar with complementary metal oxide semiconductor, CMOS), SiGe (silicon
germanium) technology, or high performance CMOS called RF CMOS. However,
it is necessary to use a gallium arsenide GaAs device to efciently achieve the
hundreds of milliwatts typically required.
Return now to the mixer-based transceiver (for receiver and transmitter)
architecture shown in a multichip form in Figure 1-3. Here, a single antenna is
used, and either a duplexer (a combined lowpass and highpass lter) or a switch
is used to separate the (frequency-spaced) transmit and receive paths. If the system
protocol requires transmit and receive at the same time, a duplexer is required to
separate the transmit and receive paths. This lter tends to be large, lossy, or costly
(depending on the technology used). Consequently a transistor switch is preferred
if the transmit and receive signals operate in different time slots. In the receive
path, a CMOS or BiCMOS chip initially amplies the low-level received signal,
and so low noise is important. This amplier is thus called a low-noise amplier
(LNA). The amplied receive signal is then bandpass ltered and frequency down-
converted by a mixer (indicated by a circle with a cross in it) to IF that can
be sampled by an ADC to produce a digital signal that is further processed by
4 MICROWAVE AND RF DESIGN: A SYSTEMS APPROACH
/
RECEIVE
TRANSMIT
Bipolar
or
Diplexer
BPF
BPF
DMOS
GaAs
POWER
AMPLIFIER
CMOS
DSP
BPF
LO
T/R Switch
Figure 1-3 RF frontend organized as multiple chips.
digital signal processing (DSP). Variants of this architecture include having two
down-conversion stages, and a variant with no mixing that relies instead on direct
conversion of the receive signal using a subsampling ADC. In the transmit path
the architecture is reversed, with a DAC driven by the DSP chip that produces
an information-bearing signal at the IF which is then frequency up-converted by
a mixer, bandpass ltered, and amplied by what is called a power amplier to
generate the hundreds of milliwatts required. An alternative transmitter design
is direct digital synthesis (DDS), which bypasses the conversion stage. Direct
conversion and DDS are difcult to implement, but are essential for the highly
desired single or few chip solution.
This chapter describes the operation and design strategies for the RF frontend ar-
chitecture of Figure 1-3, looking at ampliers, mixers, switches, and oscillators.
This architecture is used in most high-performance RF and microwave communi-
cation and radar systems. While the subsystems are preferably linear at RF, this
can only be approximated, as the active devices used are intrinsically nonlinear.
Performance is limited fundamentally by distortion, which is related to the charac-
teristics of the RF signal, and this in turn is determined by the modulation scheme
that impresses information on an RF carrier.
1.2 RF Signals
Radio frequency communication signals are engineered to trade off efcient use
of the electromagnetic (EM) spectrum with the complexity and performance of
the RF hardware required to process them. The process of converting baseband
(or low-frequency) information to RF is called modulation of which there are two
types: analog and digital modulation. In analog modulation, the RF signal has a
continuous range of values; in digital modulation, the output has a number of
prescribed discrete states. There are just a few modulation schemes that achieve
the optimum trade-offs of spectral efciency and ease of use with hardware
complexity. The major modulation schemes are
MODULATION, TRANSMITTERS AND RECEIVERS 5
Analog modulation
AM Amplitude modulation
FM Frequency modulation
PM Phase modulation
Digital modulation
FSK Frequency shift keying
PSK Phase shift keying
MSK Minimum shift keying (a form of FSK)
GMSK Minimum shift keying using Gaussian ltered data
BPSK Binary phase shift keying
QPSK Quadrature PSK (QPSK is also referred to as quar-
ternary PSK, quadriphase PSK, and quadra PSK )
/4-DQPSK /4 Differential encoded QPSK
OQPSK Offset QPSK
8PSK 8-state phase shift keying
3/8-8PSK 3 /8, 8-state phase shift keying
16PSK 16-state phase shift keying
QAM Quadrature amplitude modulation
Frequency modulation, and the similar PM modulation schemes, are used in
analog cellular radio. With the addition of legacy AM, the three schemes are the
bases of analog radio. The other schemes are used in digital radio including digital
cellular radio. GMSK is used in the GSM cellular system and is a form of FSK and
produces a constant amplitude modulated signal. The FM, FSK, GMSK, and PM
techniques produce constant RF envelopes, thus no information is contained in
the amplitude of the signal. Therefore errors introduced into the amplitude of the
system are of no signicance and so efcient saturating-mode ampliers such as
class C can be used. So there is a trade-off in the complexity of RF design, choice
of modulation format and battery life. In contrast, the MSK, /4-DQPSK, 3/8-
8PSK, and QAM techniques do not result in constant RF envelopes, so information
is contained in the amplitude of the RF signal. Thus more sophisticated RF
processing hardware is required.
1.3 Analog Modulation
Wireless modulation formats in conventional narrowband radio are based on
modifying the properties of a carrier by slowly varying the amplitude and phase
of the carrier. The waveforms and spectra of common analog modulation formats
are shown in Figure 1-4.
1.3.1 Amplitude Modulation, AM
Amplitude modulation (AM) is the simplest analog modulation scheme to
implement. Here a signal is used to slowly vary the amplitude of the carrier
according to the level of the modulating signal. The modulating signal is generally
referred to as the baseband signal and it contains all of the information to
be transmitted or interpreted. The waveforms in Figure 1-4 are stylized as the
6 MICROWAVE AND RF DESIGN: A SYSTEMS APPROACH
U
(c)
(b)
(d)
(e)
(a)
BASEBAND
CARRIER
FREQUENCY
MODULATION
AMPLITUDE
MODULATION
PHASE
MODULATION
(i) (ii)
L
FREQUENCY
TIME
Figure 1-4 Analog modulation showing (i) waveform and (ii) spectrum for (a) baseband
signal; (b) carrier; (c) carrier modulated using amplitude modulation; (d) carrier modulated
using frequency modulation; and (e) carrier modulated using phase modulation.
variation in the carrier is relatively fast. They are presented this way so that the
effects of modulation can be more easily interpreted. The baseband signal (Figure
1-4(a)) is shown as having a period that is not too far away from the period
of the carrier (Figure 1-4(b)). In reality, there would be hundreds or thousands
of RF cycles for each cycle of the baseband signal so that the frequency of the
baseband signal would have frequency components which are a tiny fraction of
the frequency of the carrier.
With AM (Figure 1-4(c)) the amplitude of the carrier is modulated and this results
in a broadening of the spectrum of the carrier, as shown in Figure 1-4(c)(ii). This
spectrum contains the original carrier component and upper and lower sidebands
designated as U and L, respectively. In AM, the two sidebands contain identical
information, so all the information would be transmitted if the carrier and one
of the sidebands were suppressed. With the carrier present, it is easy to receive a
signal by bandpass ltering the incoming modulated signal, rectifying the result,
and then lowpass ltering the rectied signal to remove harmonics of the baseband
signal.
An AM signal x(t) has the form
x(t) = A
c
[1 +my(t)] cos
c
t, (1.1)
where m is called the modulation index and y(t) is the baseband information-
bearing signal that has frequency components which are below the carrier radian
MODULATION, TRANSMITTERS AND RECEIVERS 7
V
PEAK
V
AVERAGE
V
PEAK
=1/2
Envelope
AM(100%)
Carrier
(b)
(c)
(a)
Figure 1-5 AMshowing the relationship between the carrier and modulation envelope: (a)
carrier; (b) 100% amplitude modulated carrier; and (c) modulating or baseband signal.
frequency
c
. Provided that y(t) varies slowly relative to the carrier, that is, the
frequency components of y(t) are signicantly below the carrier frequency, x(t)
looks like a carrier whose amplitude varies slowly. To get an idea of how slowly
the amplitude varies in actual systems, consider an AM radio that broadcasts at
1 MHz (which is in the middle of the AM broadcast band). The highest frequency
component of the modulating signal corresponding to voice is about 4 kHz. Thus
the amplitude of the carrier takes 250 carrier cycles to go through a complete
amplitude variation. At all times a cycle of the carrier appears to be periodic, but
in fact it is not quite. It is common to refer to the modulated carrier as being quasi-
periodic and to the apparent carrier as being the pseudo-carrier.
The concept of the envelope of a modulated RF signal is introduced in Figure 1-5.
Figure 1-5(a) is the carrier; the AM-modulated carrier is shown in Figure 1-5(b).
The outline of the modulated carrier is called the envelope, and for AM this is
identical to the modulating signal. Both the envelope and the modulating signal
are shown in Figure 1-5(c). At the peak of the envelope, the RF signal has maximum
power (considering the power of a single RF cycle). Since we are dealing with
100% AM modulation, m = 1 in Equation (1.1) and there is no RF power when the
envelope is at its minimum.
One of the characteristics of various modulation formats is the ratio of the power
of the signal when the carrier is at its peak (i.e., the power in one cycle of the
carrier when the envelope is at its maximum) relative to its average value (the
power averaged over all time). This is called the peak-to-average ratio (PAR)
and is a good indicator of how sensitive a modulation format is to the effects of
nonlinearity of the RF hardware.
It is complex to determine the PAR for a general signal, but a good estimate can
be obtained by considering that the modulating signal is a sinewave. Let y(t)
(= cos
m
t) be a cosinusoidal modulating signal with radian frequency
m
. Then
(for AM)
x(t) = A
c
[1 +mcos
m
t] cos
c
t . (1.2)
Thus if just one quasi-period of this signal is considered (i.e., one variation of the
modulated signal at the carrier frequency), then the signal has a power that varies
with time.
8 MICROWAVE AND RF DESIGN: A SYSTEMS APPROACH
Consider a voltage v(t) across a resistor of conductance G. The power of the signal,
or the average power, must be determined by integrating over all time, which is
work, and dividing by the time period yields the average power:
P
avg
= lim
1
2
Gv
2
(t) dt . (1.3)
Now, if v(t) is a cosinusoid, v(t) = Acos t, then
P
avg
= lim
1
2
_
A
2
c
Gcos
2
(t) dt
= lim
1
2
_
A
2
c
G
1
2
[1 + cos (2t)] dt
=
1
2
A
2
c
G
_
lim
1
2
_
1 dt + lim
1
2
_
cos (2t) dt
_
=
1
2
A
2
c
G (1.4)
In the above equation, a useful equivalence has been employed by observing that
the innite integral of a cosinusoid can be simplied to just integrating over one
period, T = 2/:
lim
1
2
_
cos
n
(t) dt =
1
T
_
T/2
T/2
cos
n
(t) dt (1.5)
where n is a positive integer. In power calculations there are a number of other
useful simplifying techniques based on trigonometric identities. Some of the ones
that will be used are the following:
cos Acos B =
1
2
[cos(AB) + cos(A+B)]
cos
2
A =
1
2
[1 + cos(2A)] (1.6)
lim
1
2
_
cos t dt =
1
T
_
T/2
T/2
cos (t) dt = 0 (1.7)
1
T
_
T/2
T/2
cos
2
(t) dt =
1
T
_
T/2
T/2
1
2
[cos (2t) + cos(0)] (1.8)
=
1
2T
_
_
T/2
T/2
cos (2t) dt +
_
T/2
T/2
1 dt
_
=
1
2T
(0 +T) =
1
2
. (1.9)
More trigonometric identities are given in appendix A.3 on page 576. Also, when
cosinusoids cos At and cos Bt having different frequencies (A ,= B) are multiplied
together, then
_
cos At cos Bt dt =
_
cos At cos
n
Bt dt = 0 . (1.11)
Now the discussion returns to characterizing an AM signal by considering long-
term average power and the short-term power of the signal. The maximum
amplitude of the pseudo-carrier at its peak amplitude is, from Equation (1.2),
x
p
(t) = A
c
[1 +m] cos
c
t . (1.12)
Then the power (P
peak
) contained in the peak pseudo-carrier is obtained by
integrating over one period:
P
peak
=
1
T
_
T/2
T/2
Gx
2
(t) dt =
1
T
_
T/2
T/2
A
2
c
G(1 +m)
2
cos
2
(
c
t) dt
= A
2
c
G(1 +m)
2
1
T
_
T/2
T/2
cos
2
(
c
t) dt =
1
2
A
2
c
G(1 +m)
2
. (1.13)
The average power (P
avg
) of the modulated signal is obtained by integrating over
all time, so
P
avg
= lim
1
2
_
Gx
2
(t) dt
= A
2
c
G lim
1
2
_
[1 +mcos (
m
t)] cos (
c
t)
2
dt
= A
2
c
G lim
1
2
_
__
1 + 2mcos (
m
t) +m
2
cos
2
(
m
t)
cos
2
(
c
t)
_
dt
= A
2
c
G lim
1
2
_
_
cos
2
(
c
t) + 2mcos (
m
t) cos
2
(
c
t)
+m
2
cos
2
(
m
t) cos
2
(
c
t)
dt
= A
2
c
G
_
lim
1
2
_
cos
2
(
c
t) dt
+ lim
1
2
_
2mcos (
m
t) cos
2
(
c
t) dt
+ lim
1
2
_
m
2
cos
2
(
m
t) cos
2
(
c
t) dt
_
= A
2
c
G
_
1
2
+ 0 + lim
1
2
_
m
2
cos
2
(
m
t) cos
2
(
c
t) dt
_
= A
2
c
G
_
1
2
+m
2
lim
1
2
_
1
4
[1 + cos (2
m
t)] [1 + cos (2
c
t)] dt
_
10 MICROWAVE AND RF DESIGN: A SYSTEMS APPROACH
P
avg
= A
2
c
G
_
1
2
+
m
2
4
lim
1
2
_
[1 + cos (2
m
t) + cos (2
c
t) + cos (2
m
t) cos (2
c
t)] dt
_
= A
2
c
G
_
1
2
+
m
2
4
_
lim
1
2
_
1 dt + lim
1
2
_
cos (2
m
t) dt
+ lim
1
2
_
cos (2
c
t) dt + lim
1
2
_
cos (2
m
t) cos (2
c
t) dt
__
= A
2
c
G
_
1/2 +m
2
(1/4 + 0 + 0 + 0)
=
1
2
A
2
c
G(1 +m
2
/2) . (1.14)
So the PAR of an AM signal (i.e. PAR
AM
) is
PAR
AM
=
P
peak
P
avg
=
1
2
A
2
c
G(1 +m)
2
1
2
A
2
c
G(1 +m
2
/2)
=
(1 +m)
2
1 +m
2
/2
.
For 100% AM described by m = 1, the PAR is
PAR
100%AM
=
(1 + 1)
2
1 + 1
2
/2
=
4
1.5
= 2.667 = 4.26 dB. (1.15)
In expressing the PAR in decibels the formula PAR
dB
= 10 log
10
(PAR) was used,
as the PAR is a power ratio. As an example, for 50% AM described by m = 0.5, the
PAR is
PAR
50%AM
=
(1 + 0.5)
2
1 + 0.5
2
/2
=
2.25
1.125
= 2 = 3 dB. (1.16)
The PAR is an important attribute of a modulation format and impacts the types of
circuit designs that can be used. It is much more challenging to achieve low levels
of distortion when the PAR is high.
It is tempting to consider if the lengthy integrations can be circumvented. Powers
can be added if the signal components (the tones making up the signal) are
uncorrelated. If they are correlated, then the complete integrations are required.
1
Consider two uncorrelated sinusoids of (average) powers P
1
and P
2
then the
average power of the composite signal is P
avg
= P
1
+P
2
. However, in determining
peak power, the RF cycle where the two sinusoids align is considered, and here
the voltages add to produce a sinewave with a higher amplitude. So peak power
applies to just one RF pseudo-cycle. Generally the voltage amplitude of the two
sinewaves would be added and then the power calculated. If the uncorrelated
carriers are modulated and the modulating signals (the baseband signals) are
uncorrelated then the average power can be determined in the same way, but
the peak power calculation is much more complicated. The integrations are the
only calculations that can always be relied on. They can be used with all signals,
including digitally modulated signals.
1
For the purposes here, two signals are uncorrelated if the integral of their product over all time and
all offsets is zero. That is, x(t) and y(t) are uncorrelated if C =
3
f
c
f
m
-2
f
c
f
m
- f
c
f
m
+
f
c
f
m
+2
f
c
f
m
+3
BW
V
O
L
T
A
G
E
(a) (b)
f
c
Channel
V
O
L
T
A
G
E
FREQUENCY
(c)
Figure 1-6 Frequency modulation by a sinewave: (a) signal varying the frequency of
carrier; (b) spectrum of the resulting waveform; and (c) spectrum when modulated by a
continuous baseband signal.
1.3.2 Phase and Frequency Modulation, PM and FM
The two other analog modulation schemes commonly used are phase modulation
(PM) (Figure 1-4(e)) and frequency modulation (FM) (Figure 1-4(d)). The signals
produced by the two schemes are identical; the difference is how the signals are
generated. In PM, the phase of the carrier depends on the instantaneous level of
the baseband signal. In FM, the amplitude of the baseband signal determines the
frequency of the carrier. The result in both cases is that the bandwidth of the time-
varying signal is spread out, as seen in Figure 1-6. A receiver must compress the
spread-out information to recreate the original narrowband signal, and this can be
thought of as processing gain, as the compression of correlated signals signicantly
increases the tolerance to noise. As will be seen, processing gain is essential in
digital radio, which uses digital modulation. The peak amplitude of the RF phasor
is equal to the average amplitude and so the PAR is 1 or 0 dB. A summary of the
PAR of the primary analog modulated signals is given in Figure 1-7.
Frequency modulation was invented by Edwin H. Armstrong and patented in
1933. FM is virtually static free and clearly superior to AM radio. However, it was
not immediately adopted largely because AM radio was established in the 1930s,
and the adoption of FM would have resulted in the scrapping of a large installed
12 MICROWAVE AND RF DESIGN: A SYSTEMS APPROACH
Carrier
AM(100%)
FM
PAR=4.3dB
PAR=0dB
(b)
(a)
(c)
ENVELOPE
ENVELOPE
Figure 1-7 Comparison of 100%AMand FMhighlighting the envelopes of both: (a) carrier;
(b) AM signal with envelope; and (c) FM or PM signal with the envelope being a straight
line or constant.
infrastructure (seen as a commercial catastrophe) and so the introduction of FM
was delayed by decades. The best technology does not always win immediately!
Commercial interests and the interests of those heavily invested in an alternative
technology have a great deal to do with the success of a technology.
Carsons Rule
Frequency and phase modulated signals have unlimited bandwidth but the
information content of the sidebands drops off rapidly. The bandwidth required to
reliably transmit a PM or FM signal is subjective but the best accepted criterion is
called Carsons bandwidth rule or just Carsons Rule [2, 3]. It provides an estimate
of the bandwidth capturing approximately 98% of the energy when a carrier is
frequency or phase modulated by a continuous spectrum baseband signal. An FM
signal is shown in Figure 1-6. In particular, Figures 1-6(a) and 1-6(b) show the FM
function and then the spectrum that results when a single sinewave modulates
the frequency of a carrier. As time passes, the carrier moves up and down in
frequency synchronously with the level of the input baseband signal. The level
(typically voltage) of the baseband signal determines the frequency deviation of
the carrier from its unmodulated value. The frequency shift when the modulating
signal is at its maximum amplitude is called the peak frequency deviation,
f, and the maximum frequency of the modulating frequency is f
m
. Figure 1-
6(c) shows the spectrum that results when the modulating signal, or baseband
signal, is continuous. There are multiple sidebands, with the relative strength of
each dependent on a bessel function of the highest modulation frequency, f
m
,
and the maximum frequency deviation, f. Carsons Rule, derived from these
considerations, is
Bandwidth required = 2 (f
m
+ f) . (1.17)
MODULATION, TRANSMITTERS AND RECEIVERS 13
Narrowband and Wideband FM
The FM signal, as used in FM broadcast radio, is also called wideband FM, as
the maximum frequency deviation is much greater than the highest frequency of
the modulating or baseband signal, that is, f f
m
. A more spectrally efcient
form of FM is called narrowband FM, where f f
m
. Narrowband FM was
developed as a more bandwidth efcient form of FM, but of course digital radio
has passed this now and narrowband FM is no longer an important modulation
type. The trade-off is that narrowband FM, as opposed to wideband FM, requires
more sophisticated demodulation and hence more complex circuits are required. It
should also be noted that FM as used in conventional FM broadcast radio is being
phased out so that spectrum can be used more efciently.
1.3.3 Two-Tone Signal
A two-tone signal is a signal which is the sum of two cosinusoids. Thus
y(t) = X
A
cos(
A
t) +X
B
cos(
B
t) (1.18)
is a two-tone signal. Generally the frequencies of the two tones are close with the
concept being that the two tones both t within the passband of a bandpass lter,
so it would be reasonable to assume that the individual tones have frequencies
that are within 1% of each other. A two-tone signal is not a form of modulation but
is commonly used to characterize the performance of RF systems. The composite
signal would then look like a slowly varying pseudo-carrier not unlike an AM
signal. The tones are uncorrelated so that the average power of the composite
signal, y(t), is the sum of the powers of each of the individual tones. The peak
power of the composite signal is the peak pseudo-carrier, so y(t) has a peak
amplitude of X
A
+X
B
. Similar concepts apply to three-tone and n-tone signals.
Example 1.1 PAR of a Two-Tone Signal
What is the PAR of a two-tone signal with both tones having equal amplitude?
SOLUTION: Let X
A
= X
B
= X, the peak pseudo-carrier has amplitude 2X, and so the power of the
peak RF carrier is (2X)
2
= 4X
2
. The average power is proportional to X
2
B
+X
2
B
= X
2
+X
2
= 2X
2
,
as each one is independent of the other, and so the powers can be added.
PAR =
4X
2
2X
2
= 2 = 3 dB. (1.19)
1.4 Digital Modulation
Digital modulation was rst employed in sending telegraph signals wirelessly in
which a carrier was switched, or keyed, on and off to create pulses of the carrier
signal. This modulation is now known as amplitude shift keying (ASK), but today
14 MICROWAVE AND RF DESIGN: A SYSTEMS APPROACH
1 0 1 0
time
time
time
time
time
BASEBAND
CARRIER
FREQUENCY
SHIFT KEYING
AMPLITUDE
SHIFT KEYING
PHASE
SHIFT KEYING
(c)
(b)
(d)
(e)
(a)
Figure 1-8 Modes of digital modulation: (a) modulating bit stream; (b) carrier; (c) carrier
modulated using amplitude shift keying (ASK); (d) carrier modulated using frequency shift
keying (FSK); and (e) carrier modulated using binary phase shift keying (BPSK).
this scheme is little used. Several digital modulation formats are shown in Figure
1-8. The fundamental characteristic of digital modulation is that there are discrete
states, each of which denes a symbol, with a symbol representing one or more
bits. In Figure 1-8, there are only two states representing one of two values for
a bit (0 or 1). With multiple states, groups of bits can be represented. There are
many digital modulation formats that have proved successful and many of these
are considered below. In modern communication schemes it is important to be able
to recover the original carrier, so it is important that the amplitude of the carrier
not be small for an extended period of time as it is in the ASK scheme illustrated
in Figure 1-8(c)
1.4.1 Phase Shift Keying, PSK
The waveforms and spectrum of a PSK modulated signal are shown in Figure 1-
9. The incoming baseband bit stream (Figure 1-9(a)) is lowpass ltered and used
to modulate the phase of a carrier (Figure 1-9(b)). The spectrum of this signal is
shown in Figure 1-9(c). The PSK modulation scheme is similar to that represented
in Figure 1-10, with the FSK modulator replaced by a PSK modulator which shifts
the phase of the carrier rather than its frequency. There are many variants of PSK,
with the most fundamental characteristics being the number of phase states (e.g.,
with 2
n
phase states, n bits of information can be transmitted) and how the phasor
of the RF signal transitions fromone phase state to another. Generally PSKschemes
shape the spectrum of the modulated signal to t as much energy as possible
within a spectral mask. This results in a modulated carrier whose amplitude varies
MODULATION, TRANSMITTERS AND RECEIVERS 15
(a)
INPUT
(b)
OUTPUT
(c)
SPECTRUM
TIME FREQUENCY
TIME
Figure 1-9 Characteristics of phase shift keying (PSK) modulation: (a) modulating bit
stream; (b) the waveform of the carrier modulated using PSK with the phase determined
by the 1s and 0s of the modulating bit stream; and (c) the spectrum of the modulated signal.
1
0
1
0
0
0
FSK Modulator
Filter
FSK Modulated Output
Carrier
Data
1 0 1
T
T
T/2
Figure 1-10 The frequency shift keying (FSK) modulation system.
(and thus a time-varying envelope). Such schemes require highly linear ampliers
to preserve the amplitude variations of the modulated RF signal. Other schemes
orchestrate the phase transitions to achieve a constant envelope modulated RF
signal but have lower spectral efciency. Two approaches to achieving this are rst
to slow the transitions down, and, second, to eliminate transitions from a phase
state to one which is rotated by 180
01
3/4
00 /4
10
11
1 /2
/2
SYMBOL
n+
Q
Q
11
00
01 0
10
(a) (b)
Figure 1-16 Constellation diagram of /4-QPSK modulation: (a) constellation diagram at
one symbol; and (b) the constellation diagram at the next symbol.
constellation at each symbol is rotated /4 radians from the previous symbol, as
shown in Figure 1-16.
Example 1.3 /4-QPSK Modulation and Constellation
The bit sequence 110101001000 is to be transmitted using /4-QPSK modulation. Show the
transitions on a constellation diagram.
SOLUTION: The bit sequence 110101001000 must be converted to a two-bit-wide parallel
stream of symbols resulting in the sequence of symbols 11 01 01 00 10 00. The symbol 11 transitions
to the symbol 01 and then the symbol 01 and so on. The constellation diagram of /4-QPSK modu-
lation really consists of two QPSK constellation diagrams that are shifted by /4 radians, as shown
in Figure 1-16. At one symbol (or time) the constellation diagram is that shown in Figure 1-16(a)
and at the next symbol it is that shown in Figure 1-16(b). The next symbol uses the constellation
diagram of Figure 1-16(a) and the process repeats. The states (or symbols) and the transitions from
one symbol to the next required to send the bitstream 110101001000 are shown in Figure 1-17.
One of the unique characteristics of /4-QPSKmodulation is that there is always a change, even if a
symbol is repeated. This helps with recovering the carrier frequency, which is an important function
in a demodulator. Also, the carrier phasor does not go through the origin and so the PAR is lower
than if QPSK modulation were used, as this would result in transitions through the origin. If the
binary bitstream itself (with sharp transitions in time) is the modulation signal, then the transition
from one symbol to the next occurs instantaneously and hence the modulated signal has a broad
spectrum around the carrier frequency. The transition, however, is slower if the bitstream is ltered,
and so the bandwidth of the modulated signal will be less. Ideally the transmission of one symbol
per hertz would be obtained. However, in /4-QPSK modulation the change from one symbol to the
next has a variable distance (and so takes different times) so that the ideal spectral efciency of one
symbol per hertz (or two bits/Hz) is not obtained. In practice, with realistic lters and allowing for
the longer transitions, /4-QPSK modulation achieves 1.62 bits/Hz.
MODULATION, TRANSMITTERS AND RECEIVERS 23
01
SYMBOL 5 SYMBOL 1 SYMBOL 3
I
Q
0
10 00
01
11
I
Q
0
11
10 00
01
I
Q
0
11
10 00
01
SYMBOL 2 SYMBOL 4 SYMBOL 6
I
Q
11
00
10 01
I
Q
11
00
10 01
I
Q
11
00
10
Figure 1-17 Constellation diagram states and transitions for the bit sequence
110101001000 sent as the set of symbols 11 01 01 00 10 00 using /4QPSK modulation.
1.4.7 Differential Quadrature Phase Shift Keying,
DQPSK
Multiple transmission paths, or multipaths, result in constructive and destructive
interference and can result in rapid additional phase rotations. As a result, relying
on the phase of a phasor at the symbol sample time to determine the symbol
transmitted is prone to error. When an error results at one symbol, this error
accumulates when subsequent symbols are extracted. The solution is to use
encoding, and one of the simplest encoding schemes is differential phase encoding.
In this scheme the information of the modulated signal is contained in changes
(differences) in phase rather than in the absolute phase.
The /4-DQPSK modulation scheme is a differentially encoded form of /4-
QPSK. The /4-DQPSK scheme incorporates the /4-QPSK modulator and an
encoding scheme, as shown in Figure 1-18(a). The scheme is dened with respect
to its constellation diagram, shown in Figure 1-18(b) and repeated in Figure 1-18(c)
for clarity. The D indicates differential coding, while the /4 denotes the rotation
of the constellation by /4 radians or 45
, and as the I
K
and Q
K
are delayed, a total phase change of
approximately 180
S L
Figure 1-26 The scattering parameter (Snm) and reection coefcients () associated with
a microwave transistor amplier.
1.5.1 Linear Amplier
The linear amplier is generally known as a Class A amplier and is dened by its
ability to amplify small to mediumand even large signals with minimal distortion.
This is achieved by biasing a transistor in the middle of its I-V (or current-voltage)
characteristics. Figure 1-27 shows the I-V characteristics of the FET and bipolar
transistors shown in Figures 1-28(a) and 1-28(b), together with the DC loadline.
The loadline is the locus of the output current and voltage, established by the
amplier congurations shown in Figures 1-28(c) and 1-28(d). For the Class A
ampliers in Figures 1-28(c) and 1-28(d) the loadlines are dened by
I
C
= (V
CC
V
CE
) /R
L
and I
D
= (V
DD
V
DS
) /R
L
. (1.20)
These are called single-ended ampliers as the input and output voltages are
referred to ground. The opposite type of amplier is the differential amplier
congurations to be considered shortly. An amplier using a bipolar transistor
(either a BJT, or an HBT) is shown in Figure 1-28(c), with the transistor terminals
labeled in Figure 1-28(a). Referring to Figure 1-27(a), the output voltage of the
bipolar amplier is V
CE
and this swings from a maximum value of V
CE,max
to
a minimum of V
CE,min
. For a bipolar transistor V
CE,min
is approximately 0.2 V,
while V
CE,max
for a resistively-biased circuit is just the supply voltage V
CC
. The
quiescent or bias point is shown with collector-emitter voltage V
Q
and quiescent
current I
Q
. For a Class A amplier, the quiescent point is just the bias point and
this is in the middle of the output voltage swing and the slope of the loadline is
established by the load resistor R
L
.
The I-V characteristics of a FET amplier are shown in Figure 1-27(b). The notable
difference between these characteristics and those of the bipolar transistor is that
the curves are less abrupt at low output voltage (V
C
or V
D
). This results in the
minimum output voltage (V
DS,min
) being larger than V
CE,min
. For a typical RF
FET amplier, as shown in Figure 1-28(d), the supply voltage (V
DD
) is 3 V, while
V
DS,min
is 0.5 V. So for the same supply voltage, the output voltage swing with a
FET amplier will be smaller than for a BJT amplier.
The bipolar and FET ampliers of Figure 1-28 use resistive biasing so that the
maximum output voltage swing is limited. As well, the bias resistor is also the
load resistor. Various alternative topologies have been developed yielding a range
of output voltage swings. The common variations are shown in Figure 1-29 for
an FET amplier. Figure 1-29(a) is a resistively biased Class A amplier with
MODULATION, TRANSMITTERS AND RECEIVERS 33
,max
,min
BIPOLAR CHARACTERISTIC
= 1 mA
= 2 mA
= 3 mA
= 4 mA
= 5 mA
= 6 mA
= 7 mA
Q
C
CE
I
Q
V
CE
B
DC LOAD LINE
I
V
CE
V
Q
I
V
(a)
,max
= 0 V
,min
= 0.75 V
= 1.0 V
= 1.25 V
= 1.5 V
= 1.75 V
= 0.5 V
= 0.25 V
FET CHARACTERISTIC
Q
V
DS
GS
V
DC LOAD LINE
V
DS
V
DS
V
Q
I
Q
I
D
(b)
Figure 1-27 Current-voltage characteristics of transistor ampliers shown with a Class A
loadline: (a) FET amplier and bipolar amplier.
34 MICROWAVE AND RF DESIGN: A SYSTEMS APPROACH
(d)
OUTPUT
INPUT
OUTPUT
INPUT
(a)
C
BASE B
COLLECTOR
EMITTER
E
(b)
G
D
GATE
DRAIN
S
SOURCE
(c)
V
CC
V
C
R
L
I
C
V
DD
V
D
R
L
I
C
I
B
I
D
V
GS
I
D
Figure 1-28 Class A single-ended ampliers: (a) BJT transistor with B for base terminal, C
for collector terminal, and E for emitter terminal; (b) MOSFET transistor with G for gate
terminal, D for drain terminal, and S for source terminal; (c) single-ended BJT Class A
amplier with resistive bias; and (d) single-ended MOSFET Class A amplier with resistive
bias.
the output voltage swing between V
DS,min
and V
DD
. The quiescent drain-source
voltage is halfway between these extremes. The load R
L
also provides correct
biasing. This amplier is also called a single-ended amplier to differentiate it from
a differential amplier. A more efcient Class A amplier uses inductive biasing
as shown in Figure 1-29(b). Bias current is now provided via the drain inductor
and the load R
L
is not part of the bias circuit. With the inductively loaded Class
A amplier, the quiescent voltage is V
DD
and the output voltage swing is between
V
DS,min
and 2V
DD
, slightly more than twice the voltage swing of the resistively
loaded amplier. Another topology that provides enhanced voltage swing is the
differential resistively biased amplier shown in Figure 1-29(c). This amplier
topology is also called a fully differential amplier (FDA). This is the topology
commonly found in silicon radio frequency integrated circuits (RFICs), where
the current source common to the sources of the FETs results in good differential-
mode gain (when the inputs to the two FET gates is 180
TOTAL
=
P
RF,out
P
DC
+P
RF,in
. (1.21)
At RF and microwave frequencies, the most common denition of PAE used with
power ampliers focuses on the additional RF power divided by the DC input
power. This is designated as
PAE
and is dened as
PAE
=
P
RF,out
P
RF,in
P
DC
. (1.22)
For high-gain ampliers, P
RF,in
P
DC
, and both
TOTAL
and
PAE
reduce to the
efciency of the amplier:
=
P
RF,out
P
DC
PAE
TOTAL
(high gain) . (1.23)
These efciency metrics are compared in Table 1-4 for an amplier with 1 W RF
output power. The rst amplier has a power gain of 3 dB, which is commonly the
gain of the nal amplier stage producing the maximum output power available
from a particular transistor technology.
Returning now to a discussion of the efciency of the various classes of ampliers,
since the Class A amplier is always drawing DC current the efciency of Class
A ampliers is near zero when the input signal is very small. The maximum
efciency of Class A is 25% if resistive biasing is used and 50% when inductive
biasing is used. Efciency is improved by reducing the DC power and this is
achieved by moving the bias point further down the DC loadline, as in the Class
B, AB, and C ampliers shown in Figure 1-30. Reducing the bias results in signal
38 MICROWAVE AND RF DESIGN: A SYSTEMS APPROACH
CLASS A
CLASS AB
INPUT
OUTPUT
CLASS C
CLASS B OUTPUT
INPUT
CURRENT
VOLTAGE
(a) (b)
Figure 1-31 Input and output waveforms for various classes of amplier: (a) Class A, B, C,
and AB ampliers; and (b) switching ampliers.
distortion for large RF signals. This can be seen in the various output waveforms
shown in Figure 1-31(a).
Class A ampliers have the highest linearity and Class B and C ampliers result
in considerable distortion. As a compromise, class AB ampliers are used in many
cellular applications, although Class C ampliers are used with constant envelope
modulation schemes, as in GSM. Nearly all small-signal ampliers are Class A.
This is also true for most broadband ampliers, as amplier stability is more
certain. The class A amplier presents impedances that are almost independent
of the level of the signal. However, a Class B, AB, or C amplier presents an
impedance whose value varies depending on the level of the RF signal. Thus
design requires more care, as the chances of instability are higher and it is
more likely that an oscillation condition will be met. Also, Class B, AB, and C
ampliers are generally not used in broadband applications or at high frequencies
mainly because of the problem of maintaining stability. Class A ampliers are
the preferred solution for ampliers at 10 GHz and above and for broadband
ampliers, again mainly because it is easy to ensure stability, and thus design is
much simpler and more tolerant to parasitic effects and variations.
The effect of parasitic capacitances and delay effects (such as those due to the time
it takes carriers to move across a base for a BJT or under the gate for an FET)
result in the current-voltage locus for RF signals differing from the DC situation.
This effect is captured by the dynamic or AC loadline which is shown in Figure
1-32(a). The Class A amplier is biased in the middle of the I-V characteristics
and the output from this amplier has the least distortion, as seen in Figure 1-31.
This seems very good, but the drawback is that the Class A amplier draws DC
current even when the input signal is negligible. This is a low efciency, but highly
linear class. When designers refer to a linear amplier they are referring to a
Class A amplier. The other amplier classes shown in Figure 1-30 have higher
efciencies but varying degrees of distortion. The outputs are shown in Figure 1-
MODULATION, TRANSMITTERS AND RECEIVERS 39
DC LOAD LINE
I
AC LOAD LINE
D
V
DS
DC LOAD LINE
I
AC LOAD LINE
D
V
DS
(a) (b)
Figure 1-32 DC and RF loadlines: (a) loadlines of Class A, B and C ampliers; and (b)
loadlines of switching ampliers.
31. The output of the Class B amplier contains an amplied version of only half of
the input signal but draws just a small leakage current when no signal is applied.
With the Class C amplier there must be some positive RF input signal before
there is an output: there is more distortion but no current ows, not even leakage
current, when there is no RF input signal. The Class AB amplier is a compromise
between Class A and Class B ampliers. Less DC current ows than with Class
A when there is negligible input signal and the distortion is less than with Class
B. There are higher classes of amplier, Class D, E etc., and these rely on resonant
circuits to change the shape of the loadline to result in better trade-offs between
efciency and distortion than can be achieved with Class AB.
Class C ampliers are biased so that there is almost no drain-source (or collector-
emitter) current when no RF signal is applied, so the output waveform has
considerable distortion, as shown in Figure 1-31. This distortion is important
only if there is information in the amplitude of the signal. FM, GMSK, and PM
modulation schemes result in signals with constant RF envelopes, thus there is no
information contained in the amplitude of the signal. Therefore errors introduced
into the amplitude of a signal are of no signicance and efcient saturating mode
ampliers such as a Class C amplier can be used. In contrast, MSK, /4-DQPSK
and 3/8-8PSK modulation schemes do not result in signals with constant RF
envelopes and so information is contained in the amplitude of the RF signal. For
these modulation techniques reasonably linear ampliers are required.
Switching ampliers are a conceptual departure from Class A, AB, B, and C
ampliers, as can be seen in the typical AC loadline of a switching amplier
shown in Figure 1-32(b). This loadline is achieved by presenting the appropriate
harmonic impedances to the transistor amplier. The particular scheme of
harmonic termination (e.g., short or open circuits at the even and odd harmonics)
leads to the designation of a switching amplier as Class D, E, F, etc. The key
characteristic of a switching amplier is that when there is current through the
40 MICROWAVE AND RF DESIGN: A SYSTEMS APPROACH
Table 1-5 Theoretical maximum efciencies of amplier classes.
Amplier Class Maximum Efciency
Class A (resistive bias) 25%
Class A (inductive bias) 50%
Class B 78.53%
Class C 100%
Class E 96%
Class F 88.36%
Table 1-6 Efciency reductions due to signal type. The class A amplier uses inductive
drain biasing.
Signal PAR Efciency Reduction Class A (L bias) Class E
(dB) Factor PAE PAE
FSK (MSK, GMSK) 0 1.0 50% 96%
QPSK 3.6 0.437 21.9% 42%
/4DQPSK 3.0 0.501 25.1% 48.1%
OQPSK 3.3 0.467 23.4% 44.8%
8PSK 3.3 0.467 23.4% 44.8%
64QAM 7.8 0.166 8.3% 15.9%
transistor, there is negligible voltage across the output. Also, when there is voltage
across the transistor, there is little current through it (see Figure 1-32(b)). The power
dissipated by the transistor is approximately the product of the current through it
and the voltage across the output. Thus the switching amplier consumes very
little DC power, transferring nearly all of the DC power to the RF signal. Bandpass
ltering of the output of the amplier results in a nal RF output with little
distortion. Switching ampliers are emerging as the preferred linear amplier in
both handsets and base stations of cellular systems.
The theoretical maximum power-added efciencies achieved by the various
amplier classes are given in Table 1-5. With modulated signals, the maximum
efciencies cannot be achieved, so that typically the average input power of the
amplier must be backed off by the PAR of the signal so that the peak carrier
portion of the signal has limited distortion. Generally the acceptable distortion
of the peak signal occurs at the 1 dB compression point of the amplier. This is
only an approximate guide, but useful. The PARs of several digitally modulated
signals are given in Table 1-6 together with their impact on efciency. If there are
two carriers, then the PAR of the combined signal will be higher, requiring greater
amplier back-off. In practice, the efciencies will differ from these theoretical
values because of loss in the amplier and the trade-off between efciency and
distortion. This is because the PAR does not fully capture the statistical nature of
signals, and because of coding and other technologies that can be used to reduce
the PAR.
Two microwave ampliers are shown in Figures 1-33 and 1-34. They are
MODULATION, TRANSMITTERS AND RECEIVERS 41
called microwave monolithic integrated circuits (MMICs) and are fabricated
on compound semiconductor substrates. Both are broadband high-frequency
ampliers covering 8 to 12 GHz, which is known as X-band. Note that high-power
RF and microwave transistors are put in parallel yielding the required power.
1.5.3 Differential Amplier
Differential ampliers are the preferred amplier topology with silicon monolithi-
cally integrated circuits including RFICs. Figure 1-35(a) shows a fully differential
amplier (FDA) with resistive biasing in the drain legs. As well as providing bi-
asing current, the resistors are also the loads of the circuit. The supply voltage of
an RFIC can be quite low (a few volts or less), so choosing circuit topologies that
provide for large voltage swings is important, particularly for an output ampli-
er. Differential topologies lead to an almost doubling of the output voltage swing
compared to the output voltage swing of a single-ended amplier. An FDA in-
cludes a common current source (see Figures 1-35(a) and 1-35(b)). The circuit of
Figure 1-35(a) has a higher voltage swing, as previously described. Commonly the
schematic in Figure 1-35(c) is used. The current source at the common source point
of the FDA in Figure 1-35(a) limits the voltage swing, when larger output voltage
swings are required, the current source is eliminated and the resulting amplier
is called a pseudo-differential amplier (PDA), as shown in Figure 1-35(d). Again,
inductive biasing as shown in Figure 1-35(e) almost doubles the possible voltage
swing. The schematic representation of the PDA is shown in Figure 1-35(f).
1.5.4 Distortion
Distortion imposes a fundamental limit to the practical efciency that can be
realized by an amplier. Distortion originates when the output signal from an
amplier approaches the extremes of the loadline so that the output is not an exact
amplied replication of the input signal. For a one-tone signal, the amplitude gain
of the signal rollsoff as the input power increases, as shown in Figure 1-36(a). This
gure plots the amplitude of the output sinewave against the amplitude of the
input sinewave, putting both amplitudes in terms of power. The plot is called the
AM-to-AM (AM-AM) characteristic of the amplier. The ideal amplier would
follow the linear relationship between the output and input powers. The AM-AM
characteristic is linear at low input powers, but eventually the gain compresses
and the output power drops in proportion to the input power. At large powers, the
parasitic capacitances of the transistors in the amplier vary the signal phase, and
hence phase distortion results. Figure 1-36(b) shows what is called the AM-to-PM
(AM-PM) characteristic. The AM-AM distortion is generally more signicant, and
considerable departure from the linear response occurs before the output phase
varies appreciably. In Figure 1-36(a), the 1 dB gain compression point is at the
point where the difference between the extrapolated linear response is exceeds the
actual gain by 1 dB. P
1dB
is the output power at the 1 dB gain compression point
and is the single most important metric of distortion, and amplier designs use
P
1dB
as a point of reference. Phase distortion generally occurs at higher powers
(see Figure 1-36(b)). While Figure 1-36 presents the distortion characteristics for
42 MICROWAVE AND RF DESIGN: A SYSTEMS APPROACH
INPUT
BIAS AND TEST POINTS
OUTPUT
G
G
G
G
G
G
G
AIRBRIDGE
RESISTOR
SPIRAL
INDUCTOR
TRANS-
ISTORS
1 2
STUB
(a)
2
AIRBRIDGE
MITRED BENDS
1
(b) (c)
Figure 1-33 A two-stage, two-transistor X-band (812 GHz) MMIC amplier producing
100 mW of power: (a) photomicrograph with key networks identied, G indicates ground;
(b) layout of the top spiral inductor; and (c) scanning electron microscope image of the
crosssection of the airbridge.
MODULATION, TRANSMITTERS AND RECEIVERS 43
GROUND
GROUND
INPUT
BIAS
FIRST STAGE SECOND STAGE
BIAS
BIAS
GROUND
GROUND
OUTPUT
INPUT
MATCHING
INTERSTAGE
MATCHING
OUTPUT
MATCHING
Figure 1-34 An 812 GHz MMIC amplier producing approximately 1 Wof output power
with key networks identied. (Courtesy Filtronic, PLC, used with permission.)
a single sinewave, it has proved to be a good indicator of performance with
modulated signals. A two-tone signal consisting of two sinusoidal signals is a
better representation of modulated signals. A signal linearly combining (adding)
two sinusoidal signals of equal amplitude is shown in Figure 1-37(a). When the
input signal to a Class Aamplier is large the extremes of the signal on the loadline
(see Figure 1-27), are compressed when the signal reaches its extremities. This
results in the saturated output waveformshown in Figure 1-37(b). In the frequency
domain this distortion shows up as additional tones so that this distortion is said to
produce inter-modulation products (IMPs) as shown in Figure 1-38. Here f
1
and f
2
components have the frequencies of the two tones comprising the two-tone signal.
The extra ones in the output, f
3
and f
4
, are the intermodulation tones. In Figure
1-38, the tone at f
3
= 2f
1
f
2
is known as the lower IM3 (or lower intermod)
and f
4
= 2f
2
f
1
is known as the upper intermod. As well as the amplitude
distortion resulting in additional tones, there is phase distortion as captured by
the AM-PM characteristic. Ampliers, however, introduce less phase distortion
44 MICROWAVE AND RF DESIGN: A SYSTEMS APPROACH
PSEUDO DIFFERENTIAL AMPLIFIER
V
_
V V
+
_
V
V
+
V
o
V
+
V
o
_
V
(a) (b) (c)
_
V
+
V
o
V
+
_
V
V
o
_
V
(f) (e) (d)
V
FULLY DIFFERENTIAL AMPLIFIER
o
V
+
V
o
FDA
PDA
Figure 1-35 Differential ampliers: (a) fully differential amplier (FDA); (b) FDA with
inductive biasing; (c) schematic representation; (d) pseudo-differential amplier (PDA); (e)
PDA with inductive biasing; (f) schematic representation.
NONLINEAR
in
(dB)
P
o
u
t
(
d
B
)
P
1dB
POINT
P
ACTUAL
EXTRAPOLATED
1 dB
LINEAR
GAIN 1 dB
COMPRESSION
P
in
(dB)
LINEAR
NONLINEAR
P
o
u
t
(
d
e
g
r
e
e
s
)
(a) (b)
Figure 1-36 Nonlinear effects introduced by RF hardware: (a) amplitude (AM-AM)
distortion; and (b) phase (AM-PM) distortion.
MODULATION, TRANSMITTERS AND RECEIVERS 45
(a) (b)
Figure 1-37 A two-tone signal: (a) a two-tone input waveform; and (b) distorted output
showing compression (dashed waveform is undistorted).
SPECTRUM
A
M
P
L
I
T
U
D
E
f f
f
f
2
3
4
1
Figure 1-38 Spectrum at the output of a nonlinear amplier with a two-tone input signal.
than amplitude distortion, which is fortuitous since most communication systems
encode information in the phase or frequency rather than in the amplitude.
Amplier design consists of both design for good low-power linear operation
requiring maximum power transfer at the input and output of the amplier,
and a trade-off of acceptable distortion and efciency. In practice a certain level
of distortion must be tolerated, and what is acceptable is embedded in the
specications for the various wireless systems. Further discussion on the design
of ampliers is best undertaken after scattering parameters, or S-parameters,
are introduced. S-parameters describe power ow, and the design of RF and
microwave ampliers is intricately tied to power considerations, both noise power
and signal power. Linear amplier design is described in section 6.5.1 on page 316.
For low distortion, the peaks of the RF signal must be amplied linearly, however,
the DC power consumed depends on the amplier class. With Class A ampliers,
the DCpower must be sufcient to provide undistorted amplication of the largest
RF signal so that the DCpower is proportional to the peak ACpower. The situation
is similar for Class AB ampliers, with the difference being that the intent is to
live with some distortion of the peak signal so that the relationship between peak
46 MICROWAVE AND RF DESIGN: A SYSTEMS APPROACH
power and DC power still exists, but the direct proportionality no longer holds.
For Class C and higher class ampliers, the DC power is mostly proportional
to the average RF power. So for Class A and Class AB ampliers, the average
operating point must be backedoff to allow for manageable distortion of the
peaks of a signal, with the level of back-off required being proportional to the
PAR. For Class C and higher classes, the back-off required comes from experience
and experimentation. The characteristics of the signal also determine how much
distortion can be tolerated.
The PAR of the signal is an indication of the type and amount of distortion that
can be tolerated. The PAR of the two-tone signal is 6 dB, and digitally modulated
signals can have PARs ranging from 0 dB to 10 dB or more. A signal with a
higher PAR results in lower efciency, as more back-off is required. Putting this
another way, the DC bias must be set so that there is minimum distortion when
the signal is at its peak, but the average RF power produced can be much less
than the peak RF power. (It is approximately an amount PAR below.) Thus for a
high-PAR signal, generally a higher DC power is required to produce the same RF
power. This is especially true for Class A ampliers. Efciency can be increased
by using switching ampliers. The PAR of a modulated signal is an indication
of how much information is being transferred in the amplitude of the signal. For
example, a GMSK signal has a PAR of 0 dB and there is no information in the
amplitude of a signal so that a highly efcient Class C amplier can be used as
any amplitude introduced does not matter. Signals that have higher PARs contain
increasing amounts of information in the amplitude of the signals.
AM-AM and AM-PM distortion, and two-tone distortion also provide indications
as to the distortion that occurs with digitally modulated signals. Distortion with
digitally modulated signals consists of in-band and out-of-band distortion. Out-
of-band distortion is represented in Figure 1-39, where the spectra at the input
and output of a nonlinear system are shown. The process that results in increased
levels in the adjacent sidebands is called spectral regrowth. This distortion is
approximately captured by the intermodulation distortion with a two-tone signal.
The generation of signal in the adjacent channel affects the function of other radios
and the level of signal is contained in system specications. Distortion generated
in-band affects the ability to interpret the constellation of the signal and hence
difculties in demodulating a signal. This type of distortion will be considered in
the next section.
1.5.5 Cochannel Interference
The minimum signal detectable in conventional wireless systems is determined by
the signal-to-interference ratio at the input. The noise is due to background noise
sources, including galactic noise and thermal noise. In cellular wireless systems,
the minimum signal detectable is also determined by the signal-to-interference
ratio (SIR), but now the dominant interference is due to other transmitters in the
cell and adjacent cells. The noise that is produced in the signal band from other
transmitters operating at the same frequency is called cochannel interference. The
level of cochannel interference is dependent on cell placement and frequency reuse
patterns. The degree to which cochannel interference can be controlled has a large
MODULATION, TRANSMITTERS AND RECEIVERS 47
(a)
(b)
Figure 1-39 Input and output spectra of a digitally modulated signal: (a) a digitally
modulated signal at the input of a nonlinear amplier; and (b) at the output of the amplier.
48 MICROWAVE AND RF DESIGN: A SYSTEMS APPROACH
LOWER
ADJACENT
CHANNEL OVERLAP OVERLAP
12.5 17.5
-30 0 30
ADJACENT
CHANNEL
UPPER
CHANNEL
A
M
P
L
I
T
U
D
E
-17.5 -12.5
Figure 1-40 Adjacent channels and overlap in the AMPS and DAMPS cellular systems.
effect on system capacity.
Control of cochannel interference is largely achieved by controlling the power
levels at the basestation and at the mobile units. Factors affecting interference are
The signal power falls off quickly with distance.
Transmitted power is reduced to the minimum acceptable signal-to-interference
ratio
Cochannel interference is not a nonlinear affect and is addressed using cell
placement.
1.5.6 Adjacent Channel Interference
Adjacent channel interference is the result of several factors. Since ideal ltering
cannot be achieved, there is inherent overlap of neighboring channels (Figure 1-
40). For this reason, adjacent channels are assigned to different cells. The nonlinear
behavior of transmitters also contributes to adjacent channel interference. Thus
characterization of nonlinear phenomena is important in RF design. Adjacent
channel interference occurs with both digitally modulated and analog modulated
RF signals. It turns out that conventional design approaches can be used to control
and predict adjacent channel interference for analog modulated signals but there
is as yet not a good design practice for digitally modulated signals.
The spectrum of a DAMPS signal is shown in Figure 1-41. The signal between
frequencies f
1
and f
2
is due to the digital modulation scheme and ltering. Most
of the signal outside this region is due to nonlinear effects which result in what is
called spectral regrowth, a process similar to third- and fth-order intermodulation
in two-tone systems. Using the frequency limits dened in Figure 1-41, the lower
channel ACPR is dened as
ACPR
ADJ,LOWER
=
Power in Lower Adjacent Channel
Power in Main Channel
=
_
f
4
f
3
X(f)df
_
f
2
f
1
X(f)df
, (1.24)
MODULATION, TRANSMITTERS AND RECEIVERS 49
Figure 1-41 Denition of adjacent channel and main channel integration limits using a
typical DAMPS spectrum as an example.
where X(f) is the RF signal spectral power density.
1.5.7 Noise, Distortion, and Constellation Diagrams
Noise and nonlinear distortion affect the received constellation diagram and the
ability to demodulate signals. Noise is mostly introduced from the environment,
particularly from other radios, but the noise introduced by the RF hardware itself
is signicant when the signal received is close to the minimum detectable signal.
These distortion effects can be described in part by their effect on constellation
diagrams (see Figure 1-42). An additional impact is impairment introduced in
adjacent channels. It should be emphasized that the constellation diagram shows
the state of the system at the sampling instant that is determined by the recovered
clock. Errors in recovering the clock further distort the constellation diagram.
1.5.8 Error Vector Magnitude
The error vector magnitude (EVM) is a measure of the departure of a sampled
phasor from the ideal phasor located at the constellation point. Introducing an
error vector, X
error
, and a reference vector, X
reference
, which points to the ideal
constellation point, the EVM is dened as the ratio of the power of the error vector
50 MICROWAVE AND RF DESIGN: A SYSTEMS APPROACH
IDEAL
I
Q
0
AMPLITUDE
DISTORTION
DISTORTED
IDEAL
I
Q
0
PHASE
DISTORTION
DISTORTED
WITH NOISE
I
Q
0
IDEAL
(a) (b) (c)
Figure 1-42 Impact of signal impairments on the constellation diagram of QPSK: (a)
amplitude distortion; (b) phase distortion; and (c) noise.
root mean square (RMS) power to the reference power. so that
EVM =
[X
error
[
2
[X
reference
[
2
. (1.25)
Expressing the error and reference vector in terms of the powers P
error
and
P
reference
respectively, enables EVM to expressed in terms of a power ratio:
EVM =
P
error
P
reference
. (1.26)
In decibels:
EVM(dB) = 10 log
10
P
error
P
reference
. (1.27)
or as a percentage,
EVM(%) =
P
error
P
reference
100% . (1.28)
If the modulation format results in constellation points having different powers,
the constellation point with the highest power is used as the reference.
1.6 Noise and Nonlinear Distortion
Noise and nonlinear distortion set the bounds on the signals that can be processed
in an RF circuit. Noise establishes the minimum detectable signal while nonlinear
distortion, by introducing distortion of the constellation diagram, sets the level of
the largest signal from which information can be reliably extracted. The range is
referred to as dynamic range and is one of the performance limits characterizing
analog circuits. In this section noise is considered rst and then expressions for
dynamic range developed.
MODULATION, TRANSMITTERS AND RECEIVERS 51
s
v
L
R
v
n
G
G
o
N
e
S
i
N
i
S
i
N
o
S
o
S
o
i
S
i
N
G, F
N
(a) (b) (c)
Figure 1-43 Noise and two-ports: (a) amplier; (b) amplier with excess noise; and (c)
noisy two-port network.
1.6.1 Noise
Ampliers, lters and mixers in an RF frontend process (e.g., amplify, lter, and
mix) input noise the same way as an input signal. In addition, these components
can contribute what is called excess noise of their own. Without loss of generality,
the following discussion will consider noise with respect to the amplier shown in
Figure 1-43(a), where v
s
is the input signal. The noise signal with source designated
by v
n
is uncorrelated and random and must be described as an RMS voltage or by
its noise power. The most important noise-related metric is the signal-to-noise ratio
(SNR). With the noise power input to the amplier being N
i
and the signal power
input to the amplier S
i
, the input SNR is SNR
i
= S
i
/N
i
. If the amplier is noise
free then the input noise and signal powers are amplied by the power gain of
the amplier, G. Thus the output noise power is N
o
= GN
i
and the output signal
power is S
o
= GS
i
and the output SNR is SNR
o
= S
o
/N
o
= SNR
i
.
In practice, an amplier is noisy, with the addition of excess noise, N
e
, indicated in
Figure 1-43(b). The excess noise originates in different components in the amplier
and is either referenced to the input or the output of the amplier. Most commonly
it is referenced to the output so that the total output noise power is N
o
= GN
i
+N
e
.
In the absence of a qualier, the excess noise is referred to the output. N
e
is not
measured directly. Instead the ratio of the SNR at the input to that at the output is
called the noise factor, F:
F =
SNR
i
SNR
o
(1.29)
and this is the way it is normally measured. If the system circuit is nose free then
SNR
o
= SNR
i
and F = 1. If the circuit is not noise free, then SNR
o
< SNR
i
and
F > 1. F can be related to the excess noise produced in the circuit and from this
relationship the noise of a cascaded systemcan be calculated. With the excess noise,
N
e
, referred to the circuit output,
F =
SNR
i
SNR
o
=
SNR
i
1
1
SNR
o
=
S
i
N
i
N
o
S
o
=
S
i
N
i
GN
i
+N
e
GS
i
= 1 +
N
e
GN
i
. (1.30)
One of the conclusions that can be drawn from this is that the noise factor, F,
depends on the available noise power at the input of the circuit. As a standard
52 MICROWAVE AND RF DESIGN: A SYSTEMS APPROACH
1
,2
2
G , F
1 1
G , F
2 2
N
i
S
i
N
o,1
o,1
S
o,2
S
N
o
Figure 1-44 Cascaded noisy two-ports.
reference the available noise power, N
R
, from a resistor at standard temperature
T
0
(290 K), and over a bandwidth B is used:
N
i
= N
R
= kT
0
B , (1.31)
where k is Boltzmanns constant. If the input of an amplier is connected to this
resistor and all of the noise power is delivered to the amplier, then
F = 1 +
N
e
GN
i
= 1 +
N
e
GkT
0
B
. (1.32)
Several random physical processes inside a circuit contribute to excess noise,
and not all of these process vary linearly with temperature. Consequently F is
a function of temperature although usually a weak one. It is also a function of
bandwidth and there is a problem in using F with cascaded systems in which
bandwidths vary for different subsystems. Even with all these problems, F is the
most important measure used to characterize noise. It can be used to determine the
noise performance of a cascade, when the noise factors and gains of the subsystem
constituents are known. F is the ratio of powers, and when expressed in decibels,
noise gure (NF) is used:
NF = 10 log
10
F = SNR
i
(dB) SNR
o
(dB) . (1.33)
Development of the noise factor of a cascade begins by considering the noise
contributions of the rst system, and then the next cascaded system, and so on.
The majority of RF and microwave systems are organized as cascades of two-port
networks with an input port and an output port, as shown in Figure 1-44.
If the excess noise contribution of an amplier is ignored, the output noise power
will be
N
o
= GkT
0
B . (1.34)
With excess noise, N
e
, from the amplier included, the output noise power is
N
o
= GkT
0
B +N
e
= GkT
0
B(1 +N
e
/(GkT
0
B)) = FGkT
0
B . (1.35)
Rearranging this equation the excess noise power can be written as
N
e
= (F 1)GkT
0
B . (1.36)
This result can be generalized for a system. Considering the second stage of the
cascade, the excess noise at the output of the second stage, due solely to the noise
generated internally in the second stage, is
N
e,2
= (F
2
1)kT
0
BG
2
. (1.37)
MODULATION, TRANSMITTERS AND RECEIVERS 53
Then the total noise power at the output of a two-stage cascade is
N
o,2
= (F
2
1)kT
0
BG
2
+N
o,1
G
2
(1.38)
= (F
2
1)kT
0
BG
2
+F
1
kT
0
BG
1
G
2
. (1.39)
The second term above is the noise output from the rst stage amplied by the
second gain.
Generalizing the above result yields the total noise power at the output of the mth
stage:
N
o,m
=
m
n=2
_
(F
n
1) kT
0
B
n
i=2
G
i
_
+F
1
kT
0
B
m
n=1
G
n
. (1.40)
Thus an m-stage cascade has a total cascaded system noise factor F
T
=
N
o,m
__
G
T
N
i,1
_
, with G
T
being the total cascaded available gain and N
i,1
is the
noise power input to the rst stage. In terms of the parameters of individual stages
the total system noise factor is
F
T
= F
1
+
F
2
1
G
1
+
F
3
1
G
1
G
2
+
F
4
1
G
1
G
2
G
3
+ ; (1.41)
that is,
F
T
= F
1
+
m
n=2
F
n
1
m
i=n
G
i1
. (1.42)
This equation is known as Friis formula.
Example 1.4 Noise Figure of an Attenuator
What is the noise gure of a 20 dB attenuator in a 50 system?
SOLUTION: Denoting the attenuator as being in a 50 system indicates that an appropriate circuit
model to use in the analysis consists of the attenuator driven by a generator, with a 50 source
impedance, and the attenuator drives a 50 load. Also, the input impedances of the terminated
attenuator is 50 , as is the impedance looking into the output of the attenuator when it is connected
to the source. The key point is that the noise coming from the source is the noise thermally generated
in the 50 source impedance, and this noise is equal to the noise that is delivered to the load, as the
impedance presented to the load is also 50 . So the input noise, N
i
, is equal to the output noise:
N
o
= N
i
. (1.43)
54 MICROWAVE AND RF DESIGN: A SYSTEMS APPROACH
o
IL = 3 dB
FILTER
S
o
N
o
S
o
G , F
2 2
N
i
S
i
G , F
1 1
N
Figure 1-45 Amplier and lter combination for which the total system noise gure is to
be calculated.
The input signal is attenuated by 20 dB (= 100). So
S
o
= S
i
/100 (1.44)
and thus the noise factor is
F =
SNR
i
SNR
o
=
S
i
N
i
N
o
S
o
=
S
i
N
i
N
i
S
i
/100
= 100 (1.45)
and the noise gure is
NF = 20 dB . (1.46)
So the noise gure of an attenuator (or lter) is just the loss of the component. This is not true for
ampliers of course, as there are other sources of noise, and the output impedance of a transistor is
not a thermal resistance.
Example 1.5 Noise Figure of Cascaded Stages
The cascaded two-port network in Figure 1-45 consists of a noisy amplier with a noise gure of 2 dB
and a gain of 20 dB followed by a lter with an insertion loss of 3 dB. Determine the total gain and
noise gure of the cascaded system.
SOLUTION: Friis formula can be used to calculate the total noise factor of the cascaded system,
from which the total noise gure can be determined. Since the insertion loss of the lter is 3 dB, the
gain of the lter is 3 dB and its noise gure is 3 dB, thus G
2
= 3 dB = 0.5 and NF
2
= 3 dB, so that
F
2
= 10
NF2/10
= 1.995. Also, for the rst stage, G
1
= 20 dB = 100 and F
1
= 10
NF1/10
= 1.585. The
total gain of the cascaded system is
G
T
(dB) = G
1
(dB) +G
2
(dB) = (20 dB) + (3 dB) = 17 dB . (1.47)
The total system noise factor is, from Equation (1.42),
F
T
= F
1
+ (F
2
1)/G
1
= 1.585 + (1.995 1)/100 = 1.595 . (1.48)
Thus the total noise gure of the system is NF
T
= 10 log
10
(1.595) = 2.03 dB. Note the importance
of the rst stage in determining the overall noise gure. If the gain of the rst stage is sufciently
large, subsequent stages have much less of an effect.
MODULATION, TRANSMITTERS AND RECEIVERS 55
RESPONSE
FLOOR
N
o
1
1
S
N
R
M
I
N
P
i3
P
i3
P
o
3
P
o
1
3
P
o3
P
i
P
i
P
o
IP3
NOISE
OIP3
IP3
INTERCEPT
DR
SFDR
S
F
D
R
(dB)
IIP3
(
d
B
)
LINEAR
RESPONSE
Figure 1-46 Output power versus input power of a stage or system plotted as output
power in decibels versus input power in decibels. The IP3 response is a result of two-
tone intermodulation, and the input power is the combined power of the two signals that
have equal amplitude. Extrapolations of the 1:1 linear response and the 3:1 third-order
intermodulation response intersect at the IP3 point.
1.6.2 Dynamic Range
While modern communication and radar systems use digitally modulated signals,
two-tone signals are used to both approximately characterize nonlinearity, and
in manual calculations. At low powers before compression becomes a factor, the
fundamental response has a 1:1 slope with respect to the input, as shown in Figure
1-46. The IP3 response varies as the cube of the level of input tones when both
tones vary by the same amount, as is common in a two-tone test. Thus IP3 has
a 3:1 logarithmic slope with respect to the input. Since the relations are linear in a
log-log sense it is possible to describe the nonlinear performance of an amplier by
a single quantity called the dynamic range (DR) or by the spurious free dynamic
range (SFDR). SFDR and DR also capture noise properties.
In the following, an expression for SFDR is developed in terms of input-referenced
quantitiesthe input referred SFDR, (SFDR
i
). A similarly referenced dynamic
range DR (DR
i
) is also developed. SFDR describes the difference between a signal
and the noise oor, whereas DR incorporates the Minimum Detectable Signal
(MDS) which is the noise level plus a minimum acceptable SNR (SNR
MIN
),
expressed here in decibels.
Figure 1-46 illustrates the input-output relationship of a one-tone signal to the IP3
56 MICROWAVE AND RF DESIGN: A SYSTEMS APPROACH
response of a subsystem and also graphically denes the dynamic ranges. The
point of intersection of the extrapolated linear output (of power P
o
) and third-
order (IP3) output (of power P
IP3
) is called the third-order intercept point (IP3
intercept). The point is identied by the output-referred intercept power (OIP3) or
by the input referred IP3 intercept power (IIP3), and these are key parameters in
describing the linearity of nonlinear subsystems.
In the linear gain region, P
o
versus P
i
has a slope of 1:1 so that
P
dBm,i
= P
dBm,o
G
dB
, (1.49)
where G
dB
is the power gain in decibels. P
o
is used here as the output power, with
P
dBm,o
indicating the output power in dBm. P
i
and P
dBm,i
are similarly dened.
In terms of input quantities
IIP3
dBm
= OIP3
dBm
G
dB
, (1.50)
where again the dBm subscript indicates that the quantity is expressed in decibels
referred to 1 milliwatt. The nonlinearity of RF active components results in
harmonics and intermodulation components. With the narrowband ampliers
of communication and radar systems, output lters conveniently lter out
harmonics. However, intermodulation distortion cannot be ltered out, as these
components are within the main passband. The intermodulation components
are therefore spurious tones. Generally just one of these denes the maximum
spurious tone and nearly always it is the third-order intermodulation tone with a
two-tone input. Consideration of the maximum spurious tone and the noise oor
denes the SFDR.
Examining Figure 1-46 leads to the following inequality describing the linear gain
of the amplier:
OIP3
dBm
P
dBm,o
IIP3
dBm
P
dBm,i
=
OIP3
dBm
P
dBm,o
(OIP3
dBm
G
dB
) P
dBm,i
= 1 . (1.51)
Here, P
o
, P
i
, OIP3, and IIP3 are the output power, the input power, the input-
referred IP3 intercept, and the output-referred IP3 intercept. The third-order
response is characterized by rst introducing an equivalent input power, P
dBm,i3
(P
i3
expressed in dBm), dened as the average power of the two-tone signal
that generates an IP3 of power P
dBm,o3
. Noting that P
dBm,o3
varies with a 3:1
logarithmic slope with respect to P
dBm,i3
, then
OIP3
dBm
P
dBm,o3
(OIP3
dBm
G
dB
) P
dBm,i3
= 3 (1.52)
or
P
dBm,i3
=
1
3
(2 OIP3
dBm
+P
dBm,o3
3G
dB
) . (1.53)
The SFDR can now be dened when the third-order intermodulation product
of two-tone excitation is the dominant spurious tone. The SFDR is dened as
the difference between P
i3
and P
i
when they produce IP3 and linear output
respectively that are both equal to the output noise power N
o
(see Figure 1-46);
that is, when P
o
= P
o3
= N
o
. Replacing P
dBm,o
in Equation 1.53 with N
o
gives
P
dBm,i3
=
1
3
(2 OIP3
dBm
+N
dBm,o
3G
dB
) (1.54)
MODULATION, TRANSMITTERS AND RECEIVERS 57
and
P
dBm,i
= N
dBm,o
G
dB
. (1.55)
Note that the difference between the linear output and the third-order
intermodulation reduces as the input power increases above P
i3
. Thus the output-
referred SFDR is
SFDR
dB,o
= P
dBm,i3
P
dBm,i
(1.56)
=
2
3
OIP3
dBm
+
1
3
N
dBm,o
G
dB
N
dBm,o
+G
dB
=
2
3
(OIP3
dBm
N
dBm,o
) .
A similar development can be used to dene the input-referred SFDR:
SFDR
dB,i
=
2
3
(IIP3
dBm
N
dBm,i
) . (1.57)
Note that N
i
is the input-referred noise and includes noise applied to the
subsystem as well as the noise produced internally in the subsystem and
referred to the input. The SFDR provides a combined measure of distortion
and noise. However, for usable dynamic range the minimum acceptable SNR
must be considered. The minimum SNR (SNR
MIN
) required is determined by the
communication or radar modulation format, error coding, and acceptable BER. So
in dening DR the input power of the desired signal must increase sufciently
to produce an SNR of at least SNR
MIN
. Since the desired spurious level is still at
the noise oor, this implies a direct subtraction in decibels of the desired SNR.
Therefore the input-referred third-order dynamic range, preferred for use with
receivers, is
DR
i
=
2
3
(IIP3 N
dBm,i
) SNR
MIN
(1.58)
and the output-referred dynamic range, preferred for use with transmitters, is
DR
o
=
2
3
(OIP3 N
dBm,o
) SNR
MIN
. (1.59)
1.6.3 Probability Density Function and Distortion
Amplitude modulation is not inherently required for information transmission
with PSK modulation schemes. For instance, a QPSK signal consists of two digital
data streams, equal in amplitude, modulated in quadrature onto a carrier signal.
The resulting signal would have a constant envelope; however, the occupied
bandwidth is quite large, as the spectrum of a pulse train is sin(x)/x, the sinc
function. The rst sidelobe of the sinc spectrum is only 13 dB down from the
carrier level and is in the middle of the adjacent channel. To reduce the spectrum,
a low-pass lter is typically applied to each digital data stream to minimize the
out-of-band spectrum of the modulated signal. This comes with a drawback: the
lters cause a nite memory effect resulting in amplitude variations as the ringing
energy from a previous data pulse adds to the current ltered data pulse.
Amplitude variations of the modulated signal are characterized by measured
waveform statistics such as the PAR. A signal with a high PAR requires that
the RF system have high linearity to handle the average power requirements
58 MICROWAVE AND RF DESIGN: A SYSTEMS APPROACH
-1
0
1
2
3
4
5
6
7
8
9
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
Envelope Magnitude (V)
CDMA OQPSK
CDMA QPSK
Complex Gaussian
Real Gaussian
Figure 1-47 Amplitude PDF for CDMA and Gaussian modulation signals. After [6].
and the peak amplitude excursions without generating excessive out-of-band
distortion. However, it is possible for a signal with a higher PAR to exhibit less
nonlinear distortion than a signal with lower PAR [5]. The reason for this apparent
inconsistency is because the signal peak is a singular point measurement with,
typically, a low probability of occurrence. Thus PAR is an incomplete statistic for
determining the linearity requirements for a transmitter to carry a signal.
The amplitude probability density function (APDF) is a more complete statistical
description of the amplitude variations of a modulated signal. The APDF denes
the maximum and minimum variation along with the relative probability of
occurrence of amplitudes within the variation. The APDF is typically estimated
from a histogram of amplitudes, with a uniform bin size, by
f(A) =
N
AN
c
, (1.60)
where N is the number of counts per bin, A is the bin amplitude width, and
N
c
is the total number of samples. The shape of the amplitude density between
the mean and peak amplitude inuences the sensitivity of a particular signal to
spectral regrowth due to nonlinear gain compression or expansion. For example,
Figure 1-47 shows the APDF for a CDMA mobile transmitter using OQPSK
modulation, the same signal using QPSK modulation, a real Gaussian signal, and
a complex Gaussian QPSKsignal (with I and Qeach having Gaussian distribution)
where the average power of each signal is set to 0 dBm. Gaussian signals are of
particular interest as their simple statistics lends them, and their interaction with
nonlinearities, to quasi-analytic treatment. The PAR for each signal is shown in
Table 1-7. The shape of the amplitude density after the mean differs for both signals
where it can be seen that it is difcult to determine, a priori, which signal will be
MODULATION, TRANSMITTERS AND RECEIVERS 59
Table 1-7 Peak-to-average ratios in decibels for OQPSK and QPSK used in CDMA
compared to the PARs of Gaussian signals.
Signal Modulation PAR (dB)
OQPSK CDMA 5.4
QPSK CDMA 6.6
Real Gaussian 13.5
Complex Gaussian 11.8
more sensitive to nonlinear gain compression. For example, even though QPSK
has a higher PAR than OQPSK, the probability that the OQPSK signal is near the
peak is higher than for the QPSK signal. It is not surprising then that the measured
spectral regrowth of a OQPSK signal is higher than for a QPSK signal. So PAR is
only a rough guide to the distortion that is produced.
1.7 Switches
Microwave switches are commonly used to alternately connect an antenna to a
transmitter or a receiver. In some communication systems, such as GSM, a phone
does not transmit and receive simultaneously. Consequently a switch can be used
to separate the transmitted and received signals. In multi-band phones, a switch
is used to connect the right transmitter and receiver, which are band specic, to
the antenna. In radar systems, switches are used to steer an antenna beam by
changing the phase of the microwave signal delivered to each antenna in an array
of antennas. An ideal microwave switch is shown in Figure 1-48(a) where an input
port, designated RF
IN
, and an output port, identied as RF
OUT
, are shown. For
maximum power transfer between the ports, the switch should have little loss
and so small on resistance. At microwave frequencies, switches must be modeled
with parasitics and have nite on and off resistance. A realistic model applicable
to many switch types is shown in Figure 1-48(b). The capacitive parasitics, the
C
P
s, limit the frequency of operation of the switches, and the on resistance, R
ON
,
impacts the switch loss. Ideally the off resistance, R
OFF
, is very large however the
parasitic shunt capacitance, C
OFF
, is nearly always more signicant. The result is
that at high frequencies, there is an alternative capacitive connection between the
input and output through C
OFF
. The on resistance of the switch introduces voltage
division which can be seen by comparing the ideal connection shown in Figure 1-
48(c), and the more realistic connection shown in Figure 1-48(d). From the voltage
division ratio the loss of the lter can be calculated.
Switches are congured to provide connection from one or more inputs to one or
more outputs. The conguration of a switch is indicated by poles and throws and
several congurations are shown in Figure 1-49. Most commonly in microwave
applications single pole switches are used and this input is connected to an
antenna. The throws would be connected to different bands of a multi-band
phones for example.
There a four main types of microwave switches: mechanical, PIN diode, FET,
60 MICROWAVE AND RF DESIGN: A SYSTEMS APPROACH
IN OUT
OUT
LOAD SOURCE LOAD
RF
IN
RF
IN
BIAS
GATE
CONTROL
RF
RF RF RF
IN
RF
OUT
RF
IN
RF
OUT
(e) (g) (f)
BIAS
FET MEMS BIAS
PIN DIODE
ACTUATOR
CONTROL
RF
(b) (a)
(c) (d)
SWITCH MODEL
IDEAL SWITCH
OUT
SOURCE
E
R
ON
R
OFF
C
OFF
C
P
C
P
R
S
R
L
R
ON
R
S
R
L
E
Figure 1-48 Microwave switches: (a) ideal switch connecting RF
IN
and RF
OUT
ports; (b)
model of a microwave switch; (c) ideal circuit model with switch on and with source and
load; (d) realistic low-frequency circuit model with switch on and with source and load; (e)
switch realized using a PIN diode; (f) switch realized using a FET; and (g) switch realized
using a MEMS switch; .
and MEMS switches. Mechanical switches are nearly ideal but tend to be large,
relatively expensive, and mostly used in laboratory settings. The other switches are
of most interest for use in systems. The PIN diode, FET, and MEMS switches are
shown in Figures 1-48(e), 1-48(f), and 1-48(g), respectively. With these technologies,
most higher order switches are based on interconnections of SPST switches. The
attributes of these switches is summarized in Table 1-8 for switches that are suitable
for cell phone applications. PIN diode switches are the most robust, handling the
most RF power, and operating at higher frequencies, than either FET- or MEMS-
based switches. However this comes at a price. The PIN diode used is similar to
a PN junction diode with the addition of an intrinsic layer between the p- and n-
type materials. With applied forward bias the diode has low series resistance. In
reverse bias the diode resistance is large. Forward bias requires DC current and
voltage, so control power is consumed when a PIN diode switch is on. The circuit
MODULATION, TRANSMITTERS AND RECEIVERS 61
SPDT, Single Pole, Double Throw
SP4T, Single Pole, Four Throw
SPST, Single Pole, Single Throw
DPST, Double Pole, Single Throw
DPDT, Double Pole, Double Throw
Figure 1-49 Switch congurations.
Table 1-8 Typical properties of small microwave switches. (Sources:
1
Radant MEMS,
2
RF
Micro Devices, and
3
Tyco Electronics.)
Switch Conguration Power Loss Operating Actuation Response
Type Handling at 2 GHz Frequency Voltage Time
MEMS
1
SPST 1 W 0.15 dB to 12 GHz 40120 V 5 s
MEMS
1
SPST 0.5 W 0.27 dB to 40 GHz 40120 V 5 s
pHEMT
2
SPDT 2 W 0.5 dB to 2.5 GHz 6 V 0.5 s
pHEMT
2
SPDT 10 W 0.5 dB to 6 GHz 6 V 0.5 s
PIN
3
SPDT 13 W 0.35 dB to 2 GHz 12 V 0.5 s
PIN
3
SPDT 10 W 0.4 dB to 6 GHz 12 V 0.5 s
62 MICROWAVE AND RF DESIGN: A SYSTEMS APPROACH
conguration for an SPST PIN diode switch is shown in Figure 1-48(e). Series bias
decoupling capacitors are required at the RF ports.
A eld effect transistors (FET) makes a good electronic switches; with the correct
bias applied to the gate, the drain-source connection looks like a small resistance.
Changing the bias to the other extreme removes free carriers from the channel
between the drain and source, and a large resistance is the result. Both Si and GaAs
switches are used at cellular frequencies with GaAs switches operating at extended
frequencies approaching 6 GHz. The operation of an FET can be described as
a variable drain-source resistance with the gate-source voltage controlling the
crosssection of the channel. The circuit for a a FET-based SPST switch is shown
in Figure 1-48(f). Series bias blocking capacitors are required at the RF ports.
Control power is only required to change the state of the switch; negligible power
is required to maintain the switch state.
A microelectromechanical system (MEMS) switch is fabricated using photolitho-
graphic techniques similar to those used in semiconductor manufacturing. They
are essentially miniature mechanical switches with a voltage used to control the
position of a shorting arm which is usually a cantilever or a membrane. As there is
no direct connection between the RF signal path and the control circuitry, MEMS
switches have inherently high operating frequencies. Power is required to change
the switch but once switching has been accomplished negligible DC power is re-
quired to maintain the connection.
1.8 Mixers
Frequency conversion, mixing or heterodyning, is the process of converting
information at one frequency (present in the form of a modulated carrier) to
another frequency. The second frequency is either higher, in the case of frequency
up-conversion, where it is more easily transmitted, or lower, when mixing is
called frequency down-conversion, where it is more easily captured. Capture of
the down-converted signal is nearly always by an Analog to Digital Converter
(ADC). Frequency conversion occurs with any nonlinear element. In Figure 1-
50(a) a nonlinear device is driven by two signals at
m
and
c
. The larger signal,
the LO, is called the pump and the other signal is called the RF. The spectrumof the
signals present in the circuit is shown in Figure 1-50(c). The aim here is to produce
a signal at the difference frequency (or intermediate frequency (IF)) with the same
modulation, and hence the same information, as the original RF signal. Two mixers
based on transistors are shown in Figure 1-51. The transistor mixer shown in Figure
1-51(a) uses ltering to separate the RF, LO, and IF components. Filters can be
large, so one of the particular advantages of the Gilbert mixer shown in Figure
1-51(b) is that it is a balanced mixer and ltering is not required to separate the
various signals. The symmetrical (or balanced) nature of this circuit means that
only differential mode signals at the input of the common source differential pairs
can appear at the output. Thus the largest signal present, the LO, is suppressed.
A balanced mixer can also be realized using diodes arranged in a ring to form
the diode ring double-balanced mixer shown in Figure 1-52. This mixer has the
advantage of being bidirectional, whereas the transistor mixer circuits of Figure
1-51 are unidirectional.
MODULATION, TRANSMITTERS AND RECEIVERS 63
R
S
NONLINEAR
DEVICE
cos(w t) PUMP
cos(w t)
SIGNAL
LOAD
R
S
NONLINEAR
DEVICE
V
C
cos(w
C
t) PUMP
V
M
cos(w
M
t)
SIGNAL
LOAD
0.5
0.4
0.6
0.3
0.2
0.1
0.0
-0.1
-1.0 -0.6 -0.2 0.2 0.6 1.0
i
v (V)
(A)
(a) (b)
w
C
w
C
-
w
M
FREQUENCY
w
M
2w
C
w
C
+
w
M
3w
C
2
w
C
-
w
M
2
w
C
+
w
M
3
w
C
+
w
M
3
w
C
-
w
M
RF
or IF
SIGNAL
BASEBAND
VCO
PUMP
or LO
(c) (d)
Figure 1-50 Diode mixer: (a) circuit; (b) diode current-voltage characteristic; (c) spectrum
across the nonlinear device; and (d) schematic symbol for a mixer.
1.8.1 Mixer Analysis
A two-tone input
x(t) = [X
1
[ cos(
1
t +
1
) +[X
2
[ cos(
2
t +
2
)
can be written using complex notation as
x(t) =
1
2
_
X
1
e
1
t
+
X
1
e
1
t
+
X
2
e
2
t
+
X
2
e
2
t
_
.
Note that the coefcient of the positive exponential frequency component is one-
half that of the phasor. Thus the phasor of the
1
component is
X
1
= [X
1
[e
()
=
2
X
1
, and the phasor of the
2
component is
X
2
= [X
2
[e
()
= 2
X
2
. So the rst three
powers of x can be easily expanded manually, for example, expanding x
2
gives
x
2
(t) =
_
1
2
_
2 _
X
2
1
e
21t
+ 2X
1
X
1
+ 2X
1
X
2
e
(1+2)t
+ 2X
1
X
2
e
(12)t
+ (X
1
)
2
e
21t
+ 2X
1
X
2
e
(21)t
+ 2X
1
X
2
e
(1+2)t
+X
2
2
e
22t
+ 2X
2
X
2
+ (X
2
)
2
e
22t
, (1.61)
64 MICROWAVE AND RF DESIGN: A SYSTEMS APPROACH
LO
FILTER
RF
FILTER
LO
RF
IF
FILTER
IF
GATE
BIAS
LO
FILTER
LO
FILTER
RF
FILTER
RF
FILTER
LO LO
RF RF
IF
FILTER
IF
IF
FILTER
IF
FILTER
IF
GATE
BIAS
(a)
LO
BALUN
RF
BALUN
LO
RF
IF
BALUN
IF
LO
BALUN
LO
BALUN
RF
BALUN
RF
BALUN
LO LO
RF
IF
BALUN
IF
BALUN
IF
(b)
Figure 1-51 Transistor-based mixer circuits: (a) single-ended FET mixer with LO, RF and
IF bandpass lters; (b) Gilbert mixer with baluns producing differential LO and RF signals.
RF
IF
LO
Figure 1-52 Diode ring double-balanced mixer.
and similarly expanding x
3
yields
x
3
(t) =
_
1
2
_
3 _
X
3
1
e
31t
+ 3X
2
1
X
1
e
1t
+ 3X
2
1
X
2
e
(21+2)t
+ 3X
2
1
X
2
e
(2
1
2
)t
+ 3X
1
(X
1
)
2
e
1
t
+ 6X
1
X
1
X
2
e
2
t
+ 6X
1
X
1
X
2
e
2t
+ 3X
1
X
2
2
e
(1+22)t
+ 6X
1
X
2
X
2
e
1t
+ 3X
1
(X
2
)
2
e
(122)t
+ (X
1
)
3
e
31t
+ 3(X
1
)
2
X
2
e
(221)t
+ 3(X
1
)
2
X
2
e
(21+2)t
+ 3X
1
X
2
2
e
(221)t
+ 3X
1
(X
2
)
2
e
(1+22)t
+X
3
2
e
32t
+ 6X
1
X
2
X
2
e
1t
+ 3X
2
2
X
2
e
2t
+ 3X
2
(X
2
)
2
e
2t
+ (X
2
)
3
e
32t
, (1.62)
MODULATION, TRANSMITTERS AND RECEIVERS 65
Table 1-9 The intermodulation products resulting from x, x
2
, and x
3
, where x is a two-
tone signal, showing only the positive frequencies. The rst column gives the complex
amplitudes of the frequency components.
Intermodulation Product Frequency Order
1
2
X
1
X
1
0 2
1
2
X
2
X
2
0 2
2
1
2
X
1
1
1
2(
1
2
)
3
3X
2
1
X
1
1
3
2(
1
2
)
3
6X
1
X
2
X
2
1
3
2
1
2
X
2
2
1
2(
1
2
)
3
3X
2
2
X
2
2
3
2(
1
2
)
3
6X
1
X
1
X
2
2
3
2(
1
2
)
2
X
2
1
2
1
2
2(
1
2
)
2
X
2
2
2
2
2
2(
1
2
)
3
X
3
1
3
1
3
2(
1
2
)
3
X
3
2
3
2
3
2
1
2
X
1
X
2
1
+
2
2
2
1
2
X
1
X
2
1
2
2
2(
1
2
)
3
3X
2
1
X
2
2
1
+
2
3
2(
1
2
)
3
3X
2
1
X
2
2
1
2
3
2(
1
2
)
3
3X
1
X
2
2
1
+ 2
2
3
2(
1
2
)
3
3X
1
X
2
2
2
2
1
3
so that the output of the cubic equation
y(t) = a
0
+a
1
x(t) +a
2
x
2
(t) +a
3
x
3
(t)
can be calculated for a two-tone input. Table 1-9 lists these phasors and groups
themaccording to frequency. The phasors of the various intermodulation products
resulting from x, x
2
, and x
3
can be taken as the coefcients of the positive
exponential frequency components after the factor of two correction for terms
other than DC. Terms of the same frequency are summed to obtain the output
at a particular frequency. For example, the phasor output at
1
is given by the sum
of three intermodulation products:
Y
1
= a
1
_
1
2
_
X
1
+ 3a
3
_
1
2
_
3
X
2
1
X
1
+ 6a
3
_
1
2
_
3
X
1
X
2
X
2
. (1.63)
66 MICROWAVE AND RF DESIGN: A SYSTEMS APPROACH
1.9 Early Receiver Technology
In this section, historical receivers are considered rst, in part because the terms
associated with the early receivers are still used, but also because the early trade-
offs inuence the architectures used today. Today receivers use DSP technology,
very stable LOs and sophisticated clock recovery schemes. This was not always
so. One of the early problems was using an LO to demodulate a signal when
transmitter oscillators drifted by many kilohertz. Radio at rst used AM and
the carrier was sent with the information-carrying sidebands. With this signal, a
simple rectier circuit connected to a bandpass lter could be used to rectify, but
the reception was poor. A crystal rectier consists of a single diode with lters. To
improve performance it was necessary to lock an oscillator to the carrier and then
amplify the received signal. Here some of the early schemes that addressed some
of the problems are discussed. There were many more variants, but the discussion
covers the essential ideas.
1.9.1 Heterodyne Receiver
The heterodyning principle mixes a single-tone signal, the LO, with a nite
bandwidth signal to produce a lower frequency version of the information-bearing
signal. With the LO frequency set appropriately, the low-frequency signal would
be in the audio range. If the information-bearing signal is an AM signal, then
the low-frequency version of the signal is the original audio signal which is the
envelope of the AM signal. This type of receiver is called a tuned radio frequency
(TRF) receiver, and performance is critically dependent on the stability of the
LO and the selectivity of the receive lter. The TRF receiver required the user
to adjust a tunable capacitor so that, with a xed inductor, a tunable bandpass
lter was created. Such a lter has limited Q
4
and a bandwidth that is wider than
the bandwidth of the radio channel. Even worse, a user had to adjust both the
frequency of the bandpass lter and the frequency of the LO. The initial radios
based on this principle were called audions, used a triode vacuum tube, and have
been in use since 1906. They were an improvement on the crystal detectors, but
there was a need for something better.
1.9.2 Homodyne Receiver
The homodyne [7], syncrodyne (for synchronous heterodyne) [8], and autodyne
(for automatic heterodyne) circuits were the needed improvements on the audion
and are based on the regenerative circuit invented by Edwin Armstrong in 1912
while he was an electrical engineering student at New York Citys Columbia
University [9]. Armstrongs circuit fed the input signal into an amplifying circuit
and a portion of this signal was coupled back into the input circuit so that the
signal was amplied over and over again. This is a positive feedback amplier. A
4
Q is the quality factor and is the ratio of the energy stored to the energy resistively lost each cycle.
Good frequency selectively in a lter requires high Q components. Tunable components have lower
Q than xed components.
MODULATION, TRANSMITTERS AND RECEIVERS 67
OUTPUT
ANODE
+
GRID
CATHODE
(a) (b)
Figure 1-53 The Colebrooks original homodyne receiver: (a) circuit with an antenna,
tunable bandpass lter and triode amplier; and (b) triode vacuum tube.
small input RF signal was amplied to such a large extent that it resulted in the
amplifying circuit becoming nonlinear and consequently it rectied the amplitude
modulated RF signal. Colebrook used this principle and developed the original
homodyne receiver shown in Figure 1-53(a). This serves to illustrate the operation
of the family of regenerative receivers. The antenna shown on the left-hand side is
part of a resonant circuit that is in the feedback path of a triode oscillator. The triode
vacuum tube is annotated in Figure 1-53(b). Here the grid coils (which control the
ow of carriers between the bottom cathode
5
and top anode) are weakly coupled
to the anode circuit. When an AC signal appears at the top anode, the part within
the passband of the tuned circuit is fed back to the grid and the signal reinforced.
The radio signals of the day were AM and had a relatively large carrier and so the
oscillator tended to lock on to the carrier. The AMsidebands were then successfully
heterodyned down to the desired audio frequencies.
The autodyne worked on a slightly different principle in that the oscillation
frequency was tuned to a slightly different frequency from the carrier. Still, the
autodyne combined the functions of an oscillator and detector in the same circuit.
1.9.3 Superheterodyne Receiver
The superheterodyne receiver was invented by Edwin Armstrong in 1918 [10].
The key concept was to heterodyne down in two stages and to use xed lters
and use a tunable LO. The receiving antenna was connected to a bandpass lter
that allowed several channels to pass. This relaxed the demands on the receive
lter, but also lters with higher selectivity could be constructed if they did not
need to be tuned. Today we use high-order lters that are manually or machine
tuned, as manufacturing tolerances do not allow high-Q high-order lters to
be manufactured unmodied. The ltered received signal is then mixed with
an offset LO to produce what was called a supersonic signala signal above
the audio rangeand hence the name of this architecture. The performance of
the superheterodyne (or super HET) receive architecture has only recently been
achieved at cellular frequencies using direct conversion architecture requiring
large-scale integrated (and hence silicon) circuits. However, the superheterodyne
5
The cathode is heated (the heater circuit is not shown) and electrons are spontaneously emitted in a
process called thermionic emission.
68 MICROWAVE AND RF DESIGN: A SYSTEMS APPROACH
90 90
VCO
i(t)
q(t)
a(t)
b(t)
s(t)
w
c
w
c
+ w
m
w
c
-w
m
FREQUENCY
w
c
w
c
+ w
m
w
c
-w
m
FREQUENCY
w
c
w
c
+ w
m
w
c
-w
m
FREQUENCY
w
c
w
c
+ w
m
FREQUENCY
Figure 1-54 Quadrature modulator showing intermediate spectra.
architecture is still superior above about 6 GHz.
1.10 Modern Transmitter Architectures
Modern transmitters maximize both spectral efciency and electrical efciency.
Spectral efciency is achieved by suppressing the carrier on transmit and
transmitting a single sideband. The classic technique for achieving this is
quadrature modulation, described in the next section. Electrical efciency must
be achieved with tight specications on allowable distortion and designs
must achieve this with minimum manual adjustments. Electrical efciency has
resulted in compound semiconductor transistors, including GaAs HBTs and
pHEMTS, mostly preferred for cellular handsets. For basestation and point-to-
point applications Si LDMOS is the dominant technology below a few gigahertz,
with high-breakdown galliumnitride (GaN) FETs being introduced. Another trend
is the development of universal amplier concepts so that the same RF frontend
can be used for a number of different applications. Multifunctional capability is
a cost driving transmitter architectures to minimize the RF analog hardware. The
discussion here focuses on narrowband communications when the modulated RF
carrier can be considered as a slowly varying RF phasor.
1.10.1 Quadrature Modulation
Quadrature modulation describes the frequency conversion process in that the
real and imaginary parts of the RF phasor are varied separately. A subsystem
which implements quadrature modulation is shown in Figure 1-54. This is quite an
ingenious circuit. The operation of this subsystem is described by what is known
MODULATION, TRANSMITTERS AND RECEIVERS 69
as the generalized quadrature modulation equation:
s(t) = i(t) cos [
c
t +
i
(t)] +q(t) sin[
c
t +
q
(t)] . (1.64)
Here, i(t) and q(t) embody the particular modulation rule for amplitude,
i
(t)
and
q
(t) embody the particular modulation rule for phase, and
c
is the carrier
radian frequency. In terms of the signals identied in Figure 1-54, the quadrature
modulation equation can be written as
s(t) = a(t) +b(t) (1.65)
a(t) = i(t) cos [
c
t +
i
(t)] (1.66)
b(t) = q(t) sin[
c
t +
q
(t)] , (1.67)
where a(t) describes the output of the mixer at the top and b(t) describes the output
of the mixer on the bottom. The spectrum of a(t) as shown in Figure 1-54 has two
bands above and below the frequency of the carrier,
c
. Similarly the spectrum of
b(t) has two bands above and below the frequency of the carrier. However, there is
a difference. The LO(here designated as the voltage-controlled oscillator (VCO) is
shifted 90
PA
PA
(a)
ENVELOPE
DETECTOR
MODULATED
RF INPUT
( ) t A
SWITCHING
POWER SUPPLY
MODULATED RF
OUTPUT
( ) t
LIMITER
PA
(b)
Figure 1-55 Polar modulator architectures: (a) amplitude and phase modulated compo-
nents amplied separately and combined; and (b) the amplitude used to modulate a power
supply driving a saturating amplier with phase modulated input.
TRANSMIT
MODEM
QUADRATURE
MODULATOR
PA
PREDISTORTER
QUADRATURE
MODULATION
CORRECTION
DATA
I
Q
TRANSMIT
MODEM
QUADRATURE
MODULATOR
PA PA
PREDISTORTER
QUADRATURE
MODULATION
CORRECTION
DATA
I
Q
Figure 1-56 Architecture of a direct conversion transmitter.
RF signal is then amplied by a power amplier. A direct conversion transmitter
generates the RF signal directly without an IF stage using the architecture shown
in Figure 1-56. Here, the transmit modem rst produces I and Q baseband
signals from the data. This is then translated directly to RF via a quadrature
modulator and then amplied by a PA. Practically, the nonlinearities of the PA
must be linearized using predistortion, and quadrature modulation errors must
be accounted for in a quadrature modulation corrector. The transmit modem, the
predistorter and the quadrature modulation corrector can be combined in a DSP,
so considerable complexity is shifted to the DSP chip. One of the major problems
in this architecture is the noise introduced by errors in step-size mismatch. Noise-
shaping techniques implemented in a DSP have been developed to shift this noise
outside the bandwidth of the generated signal. Similar errors are associated with
mismatches of the ADC and of the analog circuit paths of the separate I and Q
72 MICROWAVE AND RF DESIGN: A SYSTEMS APPROACH
paths. This distortion is also pushed out of band by the noise-shaping algorithm.
1.11 Modern Receiver Architectures
Communication receivers most commonly use mixing of the RF signal with a xed
signal called an LO to produce a lower frequency replica of the modulated RF
signal. Some receiver architectures use one stage of mixing, while others use two
stages of mixing. In cellular systems, the receiver must be sensitive enough to
detect signals of 1 pW or less. Some of the architectures used in modern receivers
are shown in Figure 1-57. Figure 1-57(a) is the superheterodyne architecture in
much the same form it has been used for almost a century. Key features of this
architecture are that there are two stages of mixing, and ltering is required to
suppress spurious mixing products.. Each mixing stage has its own VCO. The
receiver progressively reduces the frequency of the information bearing signal. The
image rejection mixer in the dashed box achieves rejection of the image frequency
to produce an IF (or baseband frequency) that can be directly sampled. It is,
however, difcult to achieve the amplitude and phase balance, especially when
the image reject lter is realized on an integrated circuit. Instead the architecture
shown in Figure 1-57(b) is used. The lter between the two mixers can be quite
large. For example, if the incoming signal is 1 GHz, the frequency of the signal after
the rst mixer could be 100 MHz. Filters become smaller at higher frequencies for
the same performance, so the dual-conversion receiver shown in Figure 1-57(c).
This is very similar to the traditional superheterodyne architecture except that the
intermediate frequency between the two mixers is high. In the previous example
it could be 3 GHz. The required bandpass lter can be realized as an integrated
circuit. The Low-IF or Zero-IF receiver shown in Figure 1-57(d) uses less hardware
and is used in less demanding communication applications.
1.11.1 Homodyne Frequency Conversion
Homodyne mixing and detection is one of the earliest wireless receiver
technologies and is used in AM radio. Homodyne mixing can be used for
detecting modulation formats other than AM, including digitally modulated
signals, and is a particularly attractive architecture for monolithically integrated
circuits. In homodyne mixing, the carrier of a modulated signal is regenerated
and synchronized in phase with the incoming carrier frequency. Mixing the carrier
with the RF signal results in an IF signal centered around zero frequency. The only
simple way to ensure that the pump is in phase is to transmit the carrier with
the RF signal. AM transmission does just this but at the cost of transmitting large
carrier power, as well as the additional prospect of interference that goes along
with this. Homodyne mixing can be used with digitally modulated signals.
Signal spectra that result in homodyne mixing are shown in Figure 1-58. In
Figure 1-58(a), the RF signals are shown on the right-hand side and the baseband
signals are shown on the left hand side. It is usual to show both positive and
negative frequencies at the lower frequencies so that the conversion process is
more easily illustrated. The characteristic of homodyne mixing is that the pump
corresponds to the carrier and is in the middle of the desired RF channel. RF
MODULATION, TRANSMITTERS AND RECEIVERS 73
BPF
HIGH
f
MED
f
LOW
f
HIGH
BPF
BPF
VCO1
VCO2
VCO
IF
I
Q
I
Q
I
Q
I
Q
VCO1
VCO2
SUPERHETERODYNE, HARTLEY IMAGE REJECTION
SUPERHETERODYNE RECEIVER
VCO1
VCO2
DUAL CONVERSION RECEIVER
LOWIF OR ZEROIF RECEIVER
(b)
(c)
(d)
(a)
BPF
90
f
LOW
LPF
LPF
ADC
ADC
90
90
LPF ADC
f
BPF
LPF
LPF
ADC
ADC
90
f
HIGH
f
LOW
f
HIGH
BPF BPF
LPF
LPF
ADC
ADC
90
f
HIGH
f
MED
f
LOW
+
Figure 1-57 Architecture of modern receivers: (a) superheterodyne receiver using the
Hartley architecture for image rejection; (b) superheterodyne receiver; (c) dual-conversion
receiver; low-IF or zero-IF receiver. PBF, bandpass lter; LBF, LowPass Filter; ADC, analog
to digital converter; VCO, voltage controlled oscillator; 90, 90
(a) (b)
FREQUENCY DC
DOWN-CONVERTED
MAIN CHANNEL
IF
FILTER
IMAGE
IF
+IF
FREQUENCY DC
DOWN-CONVERTED
MAIN CHANNEL
IF
FILTER
IF
FILTER
IMAGE
IF
+IF
(c)
FREQUENCY DC
DOWN-CONVERTED
MAIN CHANNEL
IMAGE
IF
+IF
(d)
FREQUENCY DC
MAIN CHANNEL WITH
IMAGE CANCELLATION
+IF
FREQUENCY DC
MAIN CHANNEL WITH
IMAGE CANCELLATION
+IF
(e)
Figure 1-62 Quadrature mixing: (a) receive modulator; and (b) transmit modulator.
Frequency conversion using heterodyne mixing and quadrature mixing; (c) the baseband
spectrum at the I output of the heterodyne receiver; (d) the baseband spectrum at the Q
output; and (e) the positive spectrum following the summation of the I and Q channels at
the output of the heterodyne receiver.
78 MICROWAVE AND RF DESIGN: A SYSTEMS APPROACH
are 180
). [WS25]
12. The cascaded two-port network in Figure 1-45 consists of a lter with an in-
sertion loss of 3 dB followed by an amplier with a noise gure of 2 dB and a
gain of 20 dB. Calculate the total gain and noise gure. This problem parallels
example 1.4 on page 237.
13. A Class A HBT amplier is biased with a collector emitter quiescent voltage of
5 V and a quiescent collector-emitter current of 100 mA. When operated at the
1 dB compression point, the input RF power is 10 mW and the output power
is 100 mW.
(a) What is the quiescent DC power consumed? Express your answer in
milliwatts.
(b) What is the output power in dBm?
(c) What is the efciency of the amplier? Note that the efciency of a class A
amplier can be more than 25% if distortion can be tolerated.
(d) What is the power-added efciency of the amplier?
(e) If the input power is reduced by 10 dB so that the amplier is no longer in
compression, will the DC quiescent point change? Explain your answer.
(f) If the input power is reduced 10 dB so that the amplier is no longer in
compression, what is the output power in dBm? Ignore any change in the
quiescent point.
(g) With 1 mW input power, what is the power-added efciency of the
amplier if the quiescent point does not change?
14. The BJT amplier in Figure 1-65(a) has a load, R
L
, and a maximumundistorted
efciency of 25%. Derive this efciency.
MODULATION, TRANSMITTERS AND RECEIVERS 85
V
V
O
OUTPUT
INPUT
V
I
CC
L
R
INPUT
V
CC
V
O
V
I
C
OUTPUT
L
L
R
(a) (b)
Figure 1-65 Class A HBT amplier with load RL: (a) with the collector bias also provided
through R
L
; and (b) collector supplied through an inductor L which is an open circuit at
AC frequencies.
15. The BJT amplier in Figure 1-65(b) has an RF choke providing collector current
and acting as an open circuit at RF. The load, R
L
, is driven through a capacitor
C which is effectively a short circuit at RF. The maximum undistorted
efciency of this circuit is 50%. Derive this efciency. Ignore the base-emitter
voltage drop, V
CE,min
, and note that the maximum of V
O
is V
CC
, allowing a
voltage swing of V
CC
around the collector quiescent operating voltage.
16. A 75 attenuator has a loss of 16 dB and is between a source with a Thevenin
impedance of 75 and a load of 75 .
(a) What is the noise power, N
i
, available from the 75 source resistor at
standard temperature (270 K) in a 1 MHz bandwidth?
(b) Now consider that the attenuator is connected to the attenuator which is
also connected to the load. If the source generates a modulated signal that
is 1 MHz wide and has an available power, S
i
, of 1 fW, what is SNR
i
at the
input to the attenuator at standard temperature?
(c) With the attenuator connected to the source, what is the Thevenin
equivalent impedance looking into the output of the attenuator?
(d) Calculate the noise power N
o
available fromthe attenuator with the source
attached at standard temperature (270 K) in a 1 MHz bandwidth?
(e) What is the signal power, S
o
, delivered to the load?
(f) What is the SNR at the load, SNR
o
?
(g) What is the noise factor, F, of the attenuator?
(h) What is the noise gure, NF, of the attenuator?
17. A superheterodyne receiver has in order an antenna, a low-noise amplier, a
bandpass lter, a mixer, a second bandpass lter, a second mixer, a lowpass
lter, an ADC, and a DSP which will implement quadrature demodulation.
Develop the frequency plan of the receiver if the input RF signal is at 2 GHz
and has a 200 kHz single-channel bandwidth. The nal signal applied to the
ADCmust be between DCand 400 kHz so that I/Qdemodulation can be done
in the DSP unit. Noise considerations mandate that the LO of the rst mixer
must be at least 10 MHz fromthe input RF. Also, for a minimumsize bandpass
lter between the two mixers, the lter should be at as high a frequency as
possible and it has been determined that a 100 MHz lter is available at an
acceptable cost, so it has been decided that it will be used.
86 MICROWAVE AND RF DESIGN: A SYSTEMS APPROACH
(a) Draw a block diagram of the receiver and annotate it with symbols for the
frequencies of the LOs and the RF and IF signals.
(b) What is the LO frequency f
LO1
of the rst mixer?
(c) What is the LO frequency f
LO2
of the second mixer?
(d) Specify the cutoff frequency of the lowpass lter following the second
mixer.
(e) Briey discuss in less than half-page other design considerations as they
relate to the frequency plan, lter size, and lter specication.
18. Short answer questions. Each part requires a short paragraph of about ve
lines and a gure where appropriate to illustrate your understanding.
(a) Consider a two-tone signal and describe intermodulation distortion.
(b) Describe the effect of a lossy lter on the SNR. Consider signals at the
input and output of the lter?
(c) What is meant by 1 dB gain compression?
(d) Consider a digitally modulated signal and describe the impact of a
nonlinear amplier on the signal. You must include several (at least)
negative effects.
19. Short answer questions. Each part requires a short paragraph of about ve
lines and a gure where appropriate to illustrate your understanding.
(a) Explain the operation of a superheterodyne receiver?
(b) Compare zero-IF and low-IF receivers.